Abstract: Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

Abstract: The present invention relates to a method for producing a solid state solar cell, including the steps of providing a conductive support layer or current collector, applying a metal oxide layer on the conducting support layer, applying at least one sensitizer layer onto the metal oxide layer or onto a first optional layer covering the metal oxide layer, the first optional layer including a charge transporting layer, applying a second optional layer onto the sensitizer layer, the second optional layer being selected from a charge transporting layer, a protective layer, or a combination of both layers, and providing a counter electrode or a metal electrode onto the sensitizer layer or the second optional layer. The at least one sensitizer layer includes an organic-inorganic or metal halide perovskite and is treated by the application of a vacuum before the annealing of the sensitizer.

Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Abstract: In embodiments, a photovoltaic cell has an expanded metal article configured as a mesh, a semiconductor material, and a front metallic article. The expanded metal article has a plurality of first segments intersecting a plurality of second segments thereby forming a plurality of openings, and has a plurality of cuts in the mesh. The expanded metal article is electrically coupled to a back surface of the semiconductor material. The front metallic article has a plurality of electroformed elements interconnected to form a unitary, free-standing piece comprising a continuous grid. The continuous grid of the front metallic article is electrically coupled to a front surface of the semiconductor material. The plurality of cuts of the expanded metal article is arranged on the photovoltaic cell to relieve stresses induced by the front metallic article on the front surface of the semiconductor material.

Abstract: A laminate comprising a plastic substrate (A); a hardened organic polymer layer (B) provided on a surface of the plastic substrate (A) and having a storage elastic modulus of from 0.01 to 5 GPa and tan ? of from 0.1 to 2.0 at 25° C. which are measured at a temperature elevating rate of 2° C./min by a dynamic viscoelasticity test stipulated in JIS K 7244; an organic/inorganic composite layer (C) provided on a surface of the hardened organic polymer layer (B) and containing covalently bound organic polymer and metal oxide nanoparticles; and an inorganic layer (D) provided on a surface of the organic/inorganic composite layer (C) and comprising secondary particles of ceramic or metal.

Abstract: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

Abstract: Provided is a surface-metalized polymer article comprising a polymer component having a surface, a first layer of multiple functionalized graphene sheets having a first chemical functional group, multiple functionalized carbon nanotubes having a second chemical group functional group, or a combination of both, which are coated on the polymer component surface, and a second layer of a plated metal deposited on the first layer, wherein the multiple functionalized graphene sheets contain single-layer or few-layer graphene sheets and/or the multiple functionalized carbon nanotubes contain single-walled or multiwalled carbon nanotubes, and wherein the multiple functionalized graphene sheets or functionalized carbon nanotubes are bonded to the polymer component surface with or without an adhesive resin.

Abstract: Disclosed herein are exciton-blocking treatments for buffer layers used in organic photosensitive optoelectronic devices. More specifically, the organic photosensitive optoelectronic devices described herein include at least one self-assembled monolayer disposed on the surface of an anode buffer layer. Methods of preparing these devices are also disclosed. The present disclosure further relates to methods of forming at least one self-assembled monolayer on a substrate.

Abstract: Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, solar cell module and interconnect includes a conformal transport layer over a subcell layer. The conformal transport layer may also laterally surround an outside perimeter the subcell layer.

Abstract: An ultra-thin and highly transparent wafer-type plasmonic solar cell comprising a layer of a conductive transparent substrate, a layer of an n-type semiconductor; a layer made of metal nanoparticles selected from the group consisting of copper, gold or silver and a layer made of a p-type semiconductor; wherein the substrate, n-type semiconductor, metal nanoparticles and p-type semiconductor respectively are linked by covalent bonds by means of one or more molecular linker/linkers. A method for producing said plasmonic solar cell by self-assembly.

Abstract: Solar devices and methods for producing solar devices are disclosed. In some examples, a solar device includes solar cells arranged in a shingled manner such that adjacent long edges of adjacent ones of the solar cells overlap. The adjacent long edges have a non-linear shape that has protruding portions. The solar device includes contact pads arranged in the protruding portions of the adjacent long edges such that the contact pads of the adjacent ones of the solar cells are electrically connected.

Abstract: Nanoscale metal halide perovskites are provided. The nanoscale metal halide perovskites may have a 2D structure, a quasi-2D structure, or a 3D structure. Methods also are provided for making the nanoscale metal halide perovskites. The color emitted by the nanoscale metal halide perovskites may be tuned.

Abstract: n-type amorphous semiconductor layers (4) and p-type amorphous semiconductor layers (5) are alternately disposed on the back surface of a semiconductor substrate (1) so as to be separated from each other at a desired interval paralleled with the direction of the surface of the semiconductor substrate (1). An electrode (6) is disposed on the n-type amorphous semiconductor layer (4), and an electrode (7) is disposed on the p-type amorphous semiconductor layer (5). A protective film (8) includes an insulating film, and is disposed on a passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7), so as to be in contact with the passivation film (3), the n-type amorphous semiconductor layer (4), the p-type amorphous semiconductor layer (5), and the electrodes (6, 7).

Abstract: A semiconductor structure includes a group III-V chiplet over a group IV substrate. A group IV optoelectronic device is situated in the group IV substrate. A patterned group III-V optoelectronic device is situated in the group III-V chiplet. A heating element is near the group IV optoelectronic device, or alternatively, near the patterned group III-V optoelectronic device. A dielectric layer is over the patterned group III-V optoelectronic device. A venting hole is in the dielectric layer in proximity of the heating element. A cavity is in the group IV substrate in proximity to the heating element.

Abstract: A method for providing etch selectivity in substrate processing is disclosed. More particularly, a plasma treatment is provided to a plurality of exposed structures comprised of varying materials. The plasma treatment will preferentially enhance the etch selectivity between at least two of the exposed structures. In one embodiment, the plurality of exposed structures are utilized as part of a multi-patterning substrate process. In one embodiment, the exposed structures may comprise an organic planarization layer and a spin-on-metal layer. The plasma treatment may comprise a plasma formed using nitrogen and hydrogen gasses and the emission of vacuum ultra-violet (VUV) wavelength radiation from such a plasma.

Abstract: Provided is a display apparatus that may minimize the occurrence of defects such as short-circuits during a manufacturing process. The display apparatus includes: a substrate having a bent region located between a first region and a second region and bent in the bent region about a bending axis; an organic material layer located on the substrate to correspond to the bent region and including a second opening or a second groove that extends in a direction that intersects the bending axis; and a first conductive layer extending from the first region through the bent region to the second region and located on the organic material layer.

Abstract: Use of a barium titanate based coating liquid composition comprising: (a) a sol-gel source material containing (i) at least a barium component selected from a group consisting of barium alkoxides, hydrolyzates of barium alkoxides and condensates of hydrolyzates of barium alkoxides and (ii) at least a titanium component selected from a group consisting of titanium alkoxides, hydrolyzates of titanium alkoxides and condensates of hydrolyzates of titanium alkoxides; and (b) a ?-keto ester compound expressed by general formula (1) shown below: where R1 and R2 independently represent respective alkyl groups having not less than 1 and not more than 6 carbon atoms.

Abstract: A solar cell module is discussed. The solar cell module is defined with an effective area and a dead area, and includes a solar cell, and a substrate disposed at one surface of the solar cell. The substrate includes a light refraction pattern formed to correspond to the dead area.

Abstract: An ink composition comprises a thermoplastic polyurethane; particles comprising silver; and at least one diluent liquid. The thermoplastic polyurethane has the property of exhibiting an elongation at break ranging from about 200% to about 1500% at 23° C. when in pure polymer form.

Abstract: Provided is a low-pressure chip packaging type junction box for a solar power generation assembly and a processing method thereof, and more particularly, relates to a low-pressure chip packaging type junction box for a solar power generation assembly integrating techniques relating to development and manufacturing of junction boxes with semiconductor packaging techniques to increase a degree of product automation and a processing method thereof. The low-pressure chip packaging type junction box for a solar power generation assembly comprises a box body, N chips, N connection members, and N+1 copper conductors, where N?1. At least one accommodation recess is arranged at the box body. The box body is provided with a transverse bar. Chip installation positions are arranged at N copper conductors. The N+1 copper conductors are provided with lead-out positions positioned at a top surface of the transverse bar. The chip is welded and fixed to the installation position at the copper conductor.

Abstract: The present invention discloses an oxidation-resistant conductive copper past, a manufacturing method and a use thereof. The oxidation-resistant conductive copper paste comprises 70 wt % to 90 wt % of copper particles, a binder, a thixotropic agent and a solvent. The manufacturing method comprises the steps of mixing the binder, the thixotropic agent and ethanol thoroughly to obtain a first mixture; mixing the solvent with the first mixture thoroughly to obtain a second mixture; mixing the copper particles with the second mixture to obtain a conductive copper paste precursor; and removing the ethanol from the conductive copper paste precursor to obtain the oxidation-resistant conductive copper paste. The oxidation-resistant conductive copper paste can be used for manufacturing a conductive film of a circuit board or an electrode of a solar battery by a printing process.

Abstract: A photovoltaic (PV) module cleaning system can include a robotic cleaning device and a support system. The support system can be configured to provide a metered fill to the robotic cleaning device. In some embodiments, the robotic cleaning device and include a curved cleaning head. Various techniques for deploying a robotic cleaning device on PV modules include out-and-back, leapfrog, among others.

Abstract: The present disclosure relates to a method for manufacturing a monolithic tandem solar cell in which a perovskite solar cell is laminated and bonded on a silicon solar cell. According to the present disclosure, a first microporous precursor thin film is formed through a sputtering method on a substrate having an unevenly structured texture and then a halide thin film is formed on the first microporous precursor thin film to form a perovskite absorption layer, whereby light reflectance can be reduced and a path of light can be increased, and accordingly a light absorption rate can be increased.

Abstract: A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

Abstract: Hole transport layers, electron transport layers, layer stacks, and optoelectronic devices involving perovskite materials and materials used as precursors, and methods of making the same, are described.

Abstract: Disclosed is a photovoltaic power generation module having a single layer structure in which a pattern glass and a solar cell module are integrated. The disclosed photovoltaic power generation module comprises: a pattern glass comprising a base member, and a pattern member provided thereon in which an optical pattern is formed; a solar cell module provided with a solar cell; a plurality of supportive adhering parts in a pillar shape adhered to the pattern member; and a filler filled between the supportive adhering part and the solar cell module, wherein the pattern glass and the solar cell module are integrated through the supportive adhering parts and the filler, and the height of the supportive adhering parts are configured to be greater than the height of the pattern member so that a gap for forming an air layer between the pattern member and the filler can be provided.

Abstract: A photovoltaic device is proposed comprising a silicon-based substrate (2) having a p-type or n-type doping, with an intrinsic buffer layer (4) situated on said substrate. A first silicon layer (6) of a first doping type is situated on predetermined regions (4a) of the intrinsic buffer layer. The first layer has interstices (5) between said predetermined regions (4a). The first silicon layer comprises at least partially a microcrystalline layer at its side away from the substrate. A microcrystalline silicon layer (8) of a second doping type is situated on said first silicon layer (6). A third silicon layer (10) of the second doping type is situated on said intrinsic buffer layer at the interstices, the third silicon layer being amorphous at its side facing said silicon-based substrate and comprising an at least partially microcrystalline layer portion to the side away from the intrinsic buffer layer.

Abstract: It discloses a perovskite optoelectronic device which includes a substrate, electrode layers and functional layers. The electrode layer is deposited on the substrate, the functional layer is deposited between the electrode layers, and the functional layer at least includes a perovskite layer, wherein the perovskite layer is a perovskite material possessing a self-organized multiple quantum well structure. By adjusting material components, controllable adjustment of the structure of the multiple quantum wells and effective energy transfer between the multiple quantum wells can be implemented, and light emitting color may be near-ultraviolet light, visible light and near-infrared light; moreover, the problems of low coverage and poor stability of the existing perovskite films can be effectively solved.

Abstract: Disclosed are methods and apparatus, including eyewear and a contact lens, for delivering sound energy to an eye, comprising two or more sonic or ultrasonic transducers that emit sound energy, wherein each transducer is (i) operably linked to a power source and (b) capable of emitting sound energy at more than one frequency and for a variable time period; and a positioning mechanism to position the transducers at an exterior surface of an eye so as to deliver sound energy to an internal part of the eye, for example the Schlemm's canal or trabecular meshwork.

Abstract: A photovoltaic device that includes a p-n junction of first type III-V semiconductor material layers, and a window layer of a second type III-V semiconductor material on the light receiving end of the p-n junction, wherein the second type III-V semiconductor material has a greater band gap than the first type III-V semiconductor material, and the window layer of the photovoltaic device has a cross-sectional area of microscale.

Abstract: An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate, wherein the P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element. This provides a solar cell with excellent conversion efficiency provided with a gallium-doped substrate, and a method for manufacturing the same.

Abstract: A carbon based material, an optical rectenna and a semiconductor device including the same are provided. The carbon based material includes a carbon nanomaterial and a metal material bonded to the carbon nanomaterial, where the carbon nanomaterial includes a fluorine material.

Abstract: There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a silicon substrate (12), a first non-crystalline semiconductor layer (20n), a second non-crystalline semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). One electrode (22n) includes first conductive layers (26n, 26p), and second conductive layers (28n, 28p). The first conductive layers (26n, 26p) have a first metal as a main component. The second conductive layers (28n, 28p) contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (26n, 26p), and are disposed to be closer to the silicon substrate (12) than the first conductive layers (26n, 26p).

Abstract: Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

Abstract: A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate. The P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element.

Abstract: This disclosure provides systems, methods, and apparatus related to a solar fuel generator. In one aspect, a device includes a photovoltaic cell, the photovoltaic cell having a first surface and a second surface, a mesh disposed on the first surface of the photovoltaic cell, and a polymer disposed on the mesh and on the first surface of the photovoltaic cell. The mesh has a catalyst disposed thereon. The polymer covers the first surface of the photovoltaic cell, with at least a portion of the mesh not being covered with the polymer.

Abstract: A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.

Abstract: There is provided a diffractive optical element including a substrate, and an array of optical nanoantennas arranged on the substrate, the array of optical nanoantennas being spaced apart periodically in a lateral direction for supporting a plurality of diffraction orders at a predetermined wavelength. In particular, each optical nanoantenna in the array of optical nanoantennas is configured to control distribution of electromagnetic energy from an incident light having the predetermined wavelength amongst the plurality of diffraction orders so as to promote scattering of the electromagnetic energy in at least a first direction and suppress scattering of the electromagnetic energy in at least a second direction, the first direction and the second direction corresponding to a first diffraction order and a second diffraction order of the plurality of diffraction orders, respectively.

Abstract: The solar cell element includes a semiconductor substrate with first and second surfaces, a passivation layer being in contact with the second surface, a protective layer located on the passivation layer, a bus bar electrode, and a collecting electrode. The bus bar electrode is in contact with the second surface in a first gap portion penetrating the passivation layer and the protective layer, and is sandwiching a gap region with the passivation layer and the protective layer in a first direction along the second surface. The collecting electrode includes an electrode layer located on the protective layer, a first connecting portion located in the gap region and connecting the electrode layer and the second surface, and a second connecting portion penetrating the passivation layer and the protective layer and connecting the electrode layer and the second surface in a second gap, and is electrically connected with the bus bar electrode.

Abstract: A solar cell and a solar laminate are described. The solar cell can have a front side which faces the sun during normal operation and a back side opposite front side. The solar cell can include conductive contacts having substantially reflective outer regions disposed on the back side of the solar cell. The solar laminate can include a first encapsulant, the first encapsulant disposed on the back side of the solar cell and a second encapsulant. The solar laminate can include the solar cell laminated between the first and second encapsulant. The substantially reflective outer regions of the conductive contacts and the first encapsulant can be configured to scatter and/or diffuse light at the back side of the solar laminate for substantial light collection at the back side of the solar cell. Methods of fabricating the solar cell are also described herein.

Abstract: Provided is a polymer capable of providing a coating film that has good initial adhesiveness to a base material and good adhesiveness thereto after a pressure cooker test, and has excellent abrasion resistance as determined by a falling sand abrasion test. The polymer includes a perhaloolefin unit, a vinyl ester unit that contains neither a hydroxy group nor an aromatic ring; and a hydroxy group-containing monomer unit. The polymer has a hydroxyl value of 110 mgKOH/g or greater.

Abstract: A method of manufacturing a back electrode type solar cell, may include forming by physical vapor deposition at least one layer of an electrode material film on both a first conductivity type semiconductor layer, to give a first electrode layer, and a second conductivity type semiconductor layer, to give a second electrode layer, and patterning the first electrode layer and the second electrode layer each in a strip-like shape such that the first electrode layer and the second electrode layer both extend in a first direction and are arranged in a second direction by removing a part of the electrode material film.

Abstract: A conductive composition has excellent adhesiveness and conductivity. A conductive composition contains copper powder, cuprous oxide, a lead-free glass frit, and an acid-based additive. The lead-free glass frit is contained in an amount of 9 to 50 parts by mass relative to 100 parts of the copper powder. The lead-free glass frit contains a borosilicate zinc-based glass frit and a vanadium zinc-based glass frit. The borosilicate zinc-based glass frit contains boron oxide, silicon oxide, zinc oxide, and optional other components, among which boron oxide, silicon oxide, and zinc oxide serve as top-three oxide components in terms of content. The vanadium zinc-based glass frit contains vanadium oxide, zinc oxide, and optional other components, among which vanadium oxide and zinc oxide serve as top-two oxide components in terms of content. The acid-based additive is contained 0.1 to 5.0 parts by mass relative to 100 parts of the copper powder.

Abstract: A catalyst includes a carrier, and a metal obtained by reducing a metal ion supported on the carrier 1) in a supercritical state or 2) in a polar organic solvent, wherein the carrier is an inorganic porous body having a hierarchical porous structure. By employing the catalyst, it is possible to exhibit better catalytic activity than a conventional catalyst. Heat generation and spontaneous ignition are prevented because no organic porous body is used.

Abstract: A method can comprise providing an ink comprising reactants, a complexing agent, and a solvent, depositing the ink onto a substrate to form a wet film, drying the wet film to form a precursor layer, and annealing the precursor layer to form a perovskite film. The reactants can comprise a first and a second cation, a first metal, and a first and a second anion, wherein the first and second cations are different from each other, and the first and second anions are different from each other. The complexing agent can comprise a heterocyclic donor material. The perovskite film can comprise a mixed-cation mixed-halide perovskite material, and less than 5% by mass of the complexing agent. The perovskite film can also be formed using a one-step process.

Abstract: A conductive composition has excellent adhesiveness to a substrate and conductivity. For example, a conductive composition contains copper powder, cuprous oxide, a lead-free glass frit, and a carboxylic acid-based additive. The cuprous oxide is contained in an amount of at least 5.5 parts by mass and up to 25 parts by mass relative to 100 parts by mass of the copper powder. The lead-free glass frit contains a borosilicate zinc-based glass frit and a vanadium zinc-based glass frit. The borosilicate zinc-based glass frit contains boron oxide, silicon oxide, zinc oxide, and optional other components, among which boron oxide, silicon oxide, and zinc oxide serve as top-three oxide components in terms of content. The vanadium zinc-based glass frit contains vanadium oxide, zinc oxide, and optional other components, among which vanadium oxide and zinc oxide serve as top-two oxide components in terms of content.

Abstract: A laminated glazing includes a first sheet of glass and a second sheet of glass which are bonded together via an adhesive interlayer, in which the second sheet of glass has a through-hole, wherein over the surface of the hole and a peripheral surface around same, a thin sheet of a thickness of between 0.01 and 0.5 mm, made from a material compatible with the manufacture and the mechanical stresses and the aging of the laminated glazing, is interposed between the adhesive interlayer and the second sheet of glass.

Abstract: Solid-state lithium ion electrolytes of lithium potassium bismuth oxide based compounds are provided which contain an anionic framework capable of conducting lithium ions. Materials of specific formulae are provided and methods to alter the materials with inclusion of aliovalent ions shown. Lithium batteries containing the composite lithium ion electrolytes are provided. Electrodes containing the lithium borate based materials coated on the active material and batteries containing the electrodes are also provided.

Abstract: A method for forming a solar cell including steps of (1) providing a semiconductor wafer having an upper surface; (2) applying an electrical contact material to the upper surface, the electrical contact material forming an electrically conductive grid that includes grid lines extending from a bus bar; (3) forming an isolation channel in the semiconductor wafer to define a solar cell portion and a wing portion, wherein the wing portion is electrically isolated from the solar cell portion, and wherein the wing portion is substantially free of the electrical contact material; (4) submerging the semiconductor wafer in a solvent, wherein formation of metal dendrites on the grid lines of the electrically conductive grid is inhibited; and (5) separating the solar cell portion from the wing portion.