Contact, Coating, Or Surface Geometry Patents (Class 136/256)
  • Patent number: 10109750
    Abstract: A lead-free conductive paste composition contains a source of an electrically conductive metal, a fusible material, an optional additive, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the lead-free paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and fusible material.
    Type: Grant
    Filed: April 21, 2015
    Date of Patent: October 23, 2018
    Assignee: E I DU PONT DE NEMOURS AND COMPANY
    Inventors: Carmine Torardi, Paul Douglas Vernooy
  • Patent number: 10103232
    Abstract: A semiconductor device (100) includes a base layer (10), an interface layer (20), and a deposition layer (30). The base layer (10) includes a nitride semiconductor that contains gallium. The interface layer (20) is adjacent to the base layer (10). The interface layer (20) contains gallium oxide. The deposition layer (30) is adjacent to the interface layer (20). The deposition layer (30) has a wider band gap than the interface layer (20). The interface layer (20) preferably has crystallinity. The interface layer (20) preferably contains ?-phase Ga2O3.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: October 16, 2018
    Assignee: OSAKA UNIVERSITY
    Inventors: Heiji Watanabe, Takahiro Yamada, Mikito Nozaki, Takuji Hosoi, Takayoshi Shimura
  • Patent number: 10096728
    Abstract: A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. Selective firing of a conductive paste can be used to form a conductive contact for a solar cell. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive paste that has a top and bottom portion with the top portion having particles coalesced together.
    Type: Grant
    Filed: June 27, 2014
    Date of Patent: October 9, 2018
    Assignee: SunPower Corporation
    Inventors: Paul Loscutoff, Taeseok Kim, Michael Morse, Peter John Cousins, Kevin Mikio Mukai
  • Patent number: 10090420
    Abstract: This disclosure relates to semiconductor devices and methods for fabricating semiconductor devices. Particularly, the disclosure relates to back-contact-only multijunction solar cells and the process flows for making such solar cells, including a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: October 2, 2018
    Assignee: Solar Junction Corporation
    Inventors: Ewelina Lucow, Lan Zhang, Sathya Chary, Ferran Suarez
  • Patent number: 10084106
    Abstract: A tandem solar cell includes a bottom solar cell having an energy bandgap with Eg1 and at least a top solar cell having an energy bandgap Eg2, the energy bandgaps satisfying a relationship Eg1<Eg2. The bottom and top solar cells are vertically stacked and electrically interconnected in series in which an area of the bottom solar cell is larger than an area of the top solar cell in an appropriate ratio to provide for a substantially current matched photovoltaic device for operation in a 2-terminal configuration. This tandem structure may contain more than two (2) cells and each cell may be composed of more than one solar cell. In this case the top solar cell has the largest bandgap, the bottom solar cell has the smallest bandgap, and intervening solar cells have intermediate bandgaps that descend in magnitude from the top to the bottom solar cell.
    Type: Grant
    Filed: April 30, 2012
    Date of Patent: September 25, 2018
    Assignee: McMaster University
    Inventors: Rafael Kleiman, Jingfeng Yang
  • Patent number: 10084099
    Abstract: One embodiment of the present invention provides a solar cell. The solar cell includes a substrate, a first heavily doped crystalline-Si (c-Si) layer situated above the substrate, a lightly doped c-Si layer situated above the first heavily doped crystalline-Si layer, a second heavily doped c-Si layer situated above the lightly doped c-Si layer, a front side electrode grid situated above the second heavily doped c-Si layer, and a backside electrode grid situated on the backside of the substrate.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: September 25, 2018
    Assignee: Tesla, Inc.
    Inventors: Chentao Yu, Zheng Xu, Jiunn Benjamin Heng, Jianming Fu
  • Patent number: 10079321
    Abstract: Techniques for increasing grain size in AZTSSe absorber materials are provided. In one aspect, a method for forming an absorber film on a substrate includes: contacting the substrate with an Ag source, a Zn source, a Sn source, and an S source and/or an Se source under conditions sufficient to form the absorber film on the substrate having a target composition of: AgXZnYSn(S,Se)Z, wherein 1.7<x<2.2, 0.9<y<1.3, and 3.5<z<4.5, and including an amount of the Ag source that is from about 10% to about 30% greater than is needed to achieve the target composition; annealing the absorber film; and removing excess Ag from the absorber film. A solar cell and method for fabrication thereof are also provided.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: September 18, 2018
    Assignee: International Business Machines Corporation
    Inventors: Talia S. Gershon, Michael S. Gordon, Yun Seog Lee
  • Patent number: 10074753
    Abstract: Methods and structures for forming a contact region on a solar cell are presented. The solar cell can have a front side which faces the sun during normal operation, and a back side opposite the front side and a silicon substrate. The silicon substrate can include at least one doped region a dielectric layer formed over the doped region. The solar cell can also include a first metal contact, such as an electrolessly plated metal contact, within a contact region through a first dielectric layer and on the doped region. The solar cell can include a printed metal, such as aluminum, formed or deposited on the first metal contact. The solar cell can include a first metal layer having a first metal contact and the first printed metal. The solar cell can include a second metal layer, such as an electrolytically electroplated metal layer, formed on the first metal layer.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: September 11, 2018
    Assignee: SunPower Corporation
    Inventor: Xi Zhu
  • Patent number: 10074754
    Abstract: A solar cell, including a substrate; and an electrode on at least one surface of the substrate. The electrode may be prepared from an electrode paste including tungsten oxide particles, and the electrode may have an adhesive strength of about 4 N/mm to about 6 N/mm with respect to a ribbon for interconnecting solar cells, as measured under conditions of a peeling angle of 180° and a stretching rate of 50 mm/min.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: September 11, 2018
    Assignee: Samsung SDI Co., Ltd.
    Inventors: JuHee Kim, Dong Suk Kim, Seok Hyun Jung, Min Jae Kim, SeakCheol Kim, Sang Hyun Yang, Je Il Lee
  • Patent number: 10074696
    Abstract: The present technology relates to an imaging device, a manufacturing device, and a manufacturing method capable of preventing a substance such as hydrogen from entering and preventing change in performance. The imaging device includes an organic photoelectric conversion film, an upper electrode provided in an upper portion of the organic photoelectric conversion film, a lower electrode provided in a lower portion of the organic photoelectric conversion film, and a metal thin film provided between the organic photoelectric conversion film and the upper electrode or between the organic photoelectric conversion film and the lower electrode. The metal thin film is provided between the organic photoelectric conversion film and the upper electrode. The upper electrode is formed of an oxide semiconductor, a metal oxide, and the metal thin film. The present technology can be applied to a vertical spectral imaging device.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: September 11, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Masahiro Joei, Shuji Manda
  • Patent number: 10074751
    Abstract: A solar cell is provided. The solar cell includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type disposed on the first semiconductor layer, an anti-reflection layer on the second semiconductor layer, and a negative charge layer between the anti-reflection layer and the second semiconductor layer.
    Type: Grant
    Filed: October 13, 2015
    Date of Patent: September 11, 2018
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS
    Inventors: Tae Joo Park, Dae Woong Kim
  • Patent number: 10074758
    Abstract: A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which include a contact system being arranged on the back so as to collect excess charge carriers generated by the incidence of light in the absorber layer; a barrier layer having a layer thickness in a range of from 50 nm to 1 ?m formed on a glass substrate; at least one coating layer intended for optical coating; and thin layer containing silicon and/or oxygen adjoining the crystalline Si absorber layer arranged on the at least one coating layer for improving the optical characteristics. The crystalline Si absorber layer can be produced by means of liquid-phase crystallization, is n-conducting, and has monocrystalline Si grains. An SiO2 passivation layer is formed between the layer containing silicon and/or oxygen and the Si absorber layer during the liquid-phase crystallization.
    Type: Grant
    Filed: March 4, 2015
    Date of Patent: September 11, 2018
    Assignee: HELMHOLTZ-ZENTRUM BERLIN FUER MATERIALIEN UND ENERGIE GMBH
    Inventors: Daniel Amkreutz, Jan Haschke, Bernd Rech
  • Patent number: 10069025
    Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer.
    Type: Grant
    Filed: September 17, 2013
    Date of Patent: September 4, 2018
    Assignee: OXFORD UNIVERSITY INNOVATION LIMITED
    Inventors: Henry James Snaith, Edward James William Crossland, Andrew Hey, James Ball, Michael Lee, Pablo Docampo
  • Patent number: 10050170
    Abstract: A method of manufacturing a solar cell can include forming a silicon oxide film on a semiconductor substrate and successively exposing the silicon oxide film to a temperature in a range of 570° C. to 700° C. to anneal the silicon oxide film.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: August 14, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Juhwa Cheong, Junyong Ahn, Wonjae Chang, Jaesung Kim
  • Patent number: 10050160
    Abstract: A Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the sintered-compact sputtering target is characterized in that the relative density is 80% or higher, and the compositional deviation of the Ga concentration is within ±0.5 at % of the intended composition. A method of producing a Cu—Ga alloy sintered-compact sputtering target having a Ga concentration of 40 to 50 at % and Cu as the balance, wherein the method thereof is characterized in that Cu and Ga raw materials are melted and cooled/pulverized to produce a Cu—Ga alloy raw material powder, and the obtained material powder is further hot-pressed with a retention temperature being between the melting point of the mixed raw material powder and a temperature 15° C. lower than the melting point and with a pressure of 400 kgf/cm2 or more applied to the sintered mixed raw material powder.
    Type: Grant
    Filed: August 10, 2011
    Date of Patent: August 14, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Tomoya Tamura, Hiroyoshi Yamamoto, Masaru Sakamoto
  • Patent number: 10043933
    Abstract: A solar cell and a method for manufacturing the same are discussed.
    Type: Grant
    Filed: May 19, 2015
    Date of Patent: August 7, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Sunyoung Kim, Choul Kim, Youngho Choe, Sungeun Lee
  • Patent number: 10043922
    Abstract: A photovoltaic cell structure is disclosed that includes a back contact layer that includes single wall carbon nanotube elements. The single wall carbon nanotube (SWNT) back contact is in electrical communication with an adjacent semiconductor layer and provides a buffer characteristic that impedes elemental metal migration from the back contact into the semiconductor active layers. In one embodiment, the SWNT back contact includes a semiconductor characteristic and a buffer characteristic. In another embodiment, the SWNT back contact further includes a metallic characteristic.
    Type: Grant
    Filed: August 13, 2013
    Date of Patent: August 7, 2018
    Assignee: The University Of Toledo
    Inventors: Michael J. Heben, Adam B. Phillips, Rajendra R. Khanal, Victor V. Plotnikov, Alvin D. Compaan
  • Patent number: 10040717
    Abstract: Devices, methods, and systems are described for thick-film paste with multiple discrete frits. The paste may be applied to contacting crystalline silicon solar cell emitter surfaces. Each frit contains both lead and tellurium. The described multiple discrete frit paste has superior solar cell performance compared with single frit pastes made from the individual discrete frits that make-up the multiple frit paste.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: August 7, 2018
    Assignee: Jiangxi Jiayin Science and Technology, Ltd.
    Inventors: Kurt R. Mikeska, Meijun Lu, Feibiao Chen
  • Patent number: 10043614
    Abstract: The present invention relates to a dye-sensitized solar cell including a light absorbing layer (1), a first conducting layer (2) for extracting photo-generated electrons from the light absorbing layer, a counter electrode including a second conducting layer (3), a porous insulating layer (5b) disposed between the first and second conducting layers, and a conducting medium for transferring charges between the counter electrode and the working electrode. The solar cell further comprises a third conducting layer (6b) disposed between the porous insulating layer (5b) and the second conducting layer (3) and in electrical contact with the second conducting layer, and the third conducting layer includes a porous substrate (8) made of an insulating material and conducting particles accommodated in the pores of the porous substrate and forming a conducting network (9) through the insulating material.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: August 7, 2018
    Assignee: Exeger Operations AB
    Inventors: Henrik Lindström, Giovanni Fili
  • Patent number: 10032944
    Abstract: A solar cell device and a method of fabricating the same are described. The method of fabricating a solar cell includes forming a photovoltaic substructure including a substrate, back contact, absorber and buffer, forming a transparent cover separate from the photovoltaic substructure including a transparent layer and a plasmonic nanostructured layer in contact with the transparent layer, and adhering the transparent cover on top of the photovoltaic substructure. The plasmonic nanostructured layer can include metal nanoparticles.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: July 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jyh-Lih Wu, Wen-Tsai Yen, Wei-Lun Xu
  • Patent number: 10026561
    Abstract: The present invention relates to a dye-sensitized solar cell (DSC) comprising a porous isolating substrate (30) having a first surface and a second surface, a first porous layer (14) comprising conducting particles printed on the first surface of the porous isolating substrate to form a conductive porous layer, a second porous layer (16) comprising conducting particles printed on the second surface of the porous isolating substrate to form a conductive porous layer, whereby the porous isolating substrate is disposed between the first and second porous layers, a third porous layer (18) comprising light absorbing dye molecules deposited on the first porous layer, and a charge transfer medium for transferring charges between the third and first porous layers.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: July 17, 2018
    Assignee: Exeger Operations AB
    Inventors: Henrik Lindström, Giovanni Fili
  • Patent number: 10023771
    Abstract: The present disclosure provides a composition. In an embodiment an adhesive composition is provided and includes A) a propylene based plastomer or elastomer (PBPE) comprising up to 10 wt % units derived from ethylene and having (i) a Koenig B-value less than 1.0; (ii) a total unsaturation per mole of propylene from 0.01% to 0.03%; (iii) a density from 0.870 g/cc to 0.890 g/cc; (iv) a melt viscosity at 177° C. from 800 mPa·s to 11,000 mPa·s; and (v) a weight average molecular weight from 20,000 to 50,000 g/mol; B) a tackifier; and C) a wax.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: July 17, 2018
    Assignee: Dow Global Technologies LLC
    Inventors: Yi Jin, Kim Walton, Gary Marchand, Selim Yalvac, Allan W. McLennaghan, Kate Brown, Carl Iverson, Cynthia Rickey
  • Patent number: 10026854
    Abstract: The present invention describes an aluminum-based paste composition including an aluminum powder, one or more glass fits, an organo-aluminate compound; and an organic vehicle. The present invention also describes a solar cell including an aluminum-based paste composition applied on a back surface of a silicon wafer.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: July 17, 2018
    Assignee: Sun Chemical Corporation
    Inventors: Philippe Schottland, Jin-an He, Christelle Conan, Robert Gilbert, Carl Carter, Robert Mateuszczyk
  • Patent number: 10023793
    Abstract: A marker composition and a package using same. The marker composition can include retroreflective particles and a dispersion medium, the blending ratio of the retroreflective particles being from 50 to 90 mass % on the basis of the total marker composition.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: July 17, 2018
    Assignee: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Kenton D. Budd, Neeraj Sharma, Bill H. Dodge, Daimon K Heller, Michael A. Haase, Mahmut Aksit
  • Patent number: 10023770
    Abstract: The present disclosure provides an adhesive composition. The adhesive composition includes: A) a propylene based plastomer or elastomer (PBPE) comprising up to 15 wt % units derived from ethylene and having (i) a Koenig B-value less than 1.0; (ii) a total unsaturation per mole of propylene from 0.010% to 0.030%; (iii) a density from 0.860 g/cc to 0.890 g/cc; (iv) a melt viscosity at 177° C. from 1,000 mPa·s to 15,000 mPa·s; and (v) a weight average molecular weight from 20,000 to 50,000 g/mole.
    Type: Grant
    Filed: August 20, 2015
    Date of Patent: July 17, 2018
    Assignee: Dow Global Technologies LLC
    Inventors: Allan W. McLennaghan, Yi Jin, Kate Brown
  • Patent number: 10020209
    Abstract: Disclosed are a method and a system for processing wafers in fabricating a semiconductor device where disposing chemicals and wafer heating are needed for chemical reaction. A wafer is placed above a wafer heater such that a second surface faces the wafer heater, and heated from the second surface. A chemical layer is formed on an opposing first surface. The wafer heater is sized and configured to be capable of heating the entire second surface, and adapted to produce a locally differential temperature profile if needed. During heating, an actual temperature profile on the wafer may be monitored and transmitted to a computing system, which may generate a target temperature profile and control the wafer heater to adjust local temperatures on the wafer according to the target temperature profile. A supplemental heater for heating the chemicals may be used for finer control of the wafer temperature.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: July 10, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ying-Hsueh Chang Chien, Chi-Ming Yang
  • Patent number: 10020121
    Abstract: A dye-sensitized photoelectric conversion element including a cell is disclosed. The cell includes a conductive substrate and a transparent conductive layer, a counter substrate facing the conductive substrate and including a metal substrate, a semiconductor layer provided on the conductive substrate, a sealing portion bonding the conductive and the counter substrates, a connecting portion connecting one end of a wiring material and the metal substrate, and a portion to be connected which is connected to the other end of the wiring material, the connecting portion contains first conductive particles, a filler, and a binder resin, the wiring material contains second conductive particles and a binder resin, an average particle diameter of the first conductive particles is greater than that of the filler in the connecting portion, and a content rate of the filler in the connecting portion is greater than that of the filler in the wiring material.
    Type: Grant
    Filed: September 28, 2015
    Date of Patent: July 10, 2018
    Assignee: FUJIKURA LTD.
    Inventors: Katsuyoshi Endoh, Ko Nishiwaki
  • Patent number: 10014418
    Abstract: The present invention relates to an inorganic reaction system used in the manufacture of electroconductive pastes. The inorganic reaction system comprises a lead containing matrix forming composition and a tellurium oxide additive. Preferably the lead containing matrix forming composition is between 5-95 wt. % of the inorganic reaction system, and the tellurium oxide additive is between 5-95 wt. % of the inorganic reaction system. The lead containing matrix forming composition may be a glass frit, and may comprise lead oxide. Another aspect of the present invention relates to an electroconductive paste composition that comprises metallic particles, an inorganic reaction system as previously disclosed, and an organic vehicle. Another aspect of the present invention relates to an organic vehicle that comprises one or more of a binder, a surfactant, a solvent, and a thixatropic agent.
    Type: Grant
    Filed: September 7, 2016
    Date of Patent: July 3, 2018
    Assignee: Heraeus Precious Metals North America Conshohocken LLC
    Inventors: Lei Wang, Matthias Hörteis, Weiming Zhang
  • Patent number: 10008622
    Abstract: The solar cell includes: a first metal seed layer and a first plating layer provided on a first surface of a photoelectric conversion section; a second metal seed layer provided on a second surface of the photoelectric conversion section; and a third metal seed layer and a third plating layer provided on the lateral surface and the peripheral edge of the second surface of the photoelectric conversion section. The first metal seed layer is in electrical continuity with the third metal seed layer, while the second metal seed layer is in electrical non-continuity with the third metal seed layer. By supplying electricity to at least one of the first metal seed layer and the third metal seed layer, the first plating layer and the third plating layer are formed simultaneously.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: June 26, 2018
    Assignee: KANEKA CORPORATION
    Inventors: Gensuke Koizumi, Daisuke Adachi, Kunihiro Nakano
  • Patent number: 10002845
    Abstract: In a soldering method for Ag-containing lead-free solders to be soldered to an Ag-containing member, void generation is prevented and solder wettability is improved. The soldering method for Ag-containing lead-free solders of the present invention is a soldering method for Ag-containing lead-free solders includes a first step of bringing a lead-free solder having a composition that contains Ag that a relation between a concentration C (mass %) of Ag contained in an Sn—Ag-based lead-free solder before soldering of a mass M(g) and an elution amount B(g) of Ag contained in the Ag-containing member becomes 1.0 mass %?(M×C+B)×100/(M+B)?4.6 mass % and that the balance consists of Sn and unavoidable impurities into contact with the Ag-containing member, a second step of heating and melting the lead-free solder, and a third step of cooling the lead-free solder.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: June 19, 2018
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Hirohiko Watanabe, Shunsuke Saito, Masahiro Ono, Takashi Watanabe, Shinji Sano, Kazunaga Onishi
  • Patent number: 10002716
    Abstract: Differing from conventional technology utilizing double-layer electron transport layer (ETL) to improving power conversion efficiency of perovskite solar cell, the present invention discloses a novel electron transport structure comprising an interfacial diploe moment enhancing layer, an electron transport layer and an interfacial layer. After applying this electron transport structure in a perovskite solar cell, it is found that an interfacial dipole moment formed between the electron transport layer of the electron transport structure and an active layer of the perovskite solar cell is amplified, so as to give rise to an enhanced driving force for the separation of photogenerated carriers and accelerating charge extraction.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: June 19, 2018
    Assignee: National Tsing Hua University
    Inventors: Hao-Wu Lin, Wei-Hung Lee, Sheng-Yi Hsiao
  • Patent number: 9997650
    Abstract: A solar cell includes: a first-conductivity-type semiconductor substrate that includes an impurity diffusion layer on one surface side, which is a light receiving surface side, the impurity diffusion layer having a second-conductivity-type impurity element diffused therein; a plurality of linear light-receiving-surface-side electrodes that are a paste electrode that has a multi-layered structure, is formed by multi-layer printing of an electrode material paste on the one surface side, and is electrically connected to the impurity diffusion layer and that extend in parallel in a specific direction in a plane direction of the semiconductor substrate; and a back-surface-side electrode that is formed on another surface side of the semiconductor substrate. In the light-receiving-surface-side electrodes, the light-receiving-surface-side electrodes get smaller in width as they get closer in a width direction of the light-receiving-surface-side electrodes to a specific reference position.
    Type: Grant
    Filed: November 7, 2013
    Date of Patent: June 12, 2018
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Norihiro Tamura, Hayato Kohata, Atsuro Hama
  • Patent number: 9997837
    Abstract: A method of forming an electronic field emission rectifier involves depositing a first metal layer, a dielectric, and a second metal layer on a substrate in that order. The dielectric layer and the second metal layer are patterned. Patterning the dielectric and second metal layers involves depositing a nanostructuring layer on the second metal layer. The nanostructuring layer self-assembles into removable regions embedded within a matrix. When the removable regions are removed, a pattern is formed in the matrix.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: June 12, 2018
    Assignee: Palo Alto Research Center Incorporated
    Inventors: David K. Biegelsen, JengPing Lu, Janos Veres
  • Patent number: 9997652
    Abstract: Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.
    Type: Grant
    Filed: September 25, 2015
    Date of Patent: June 12, 2018
    Assignee: SunPower Corporation
    Inventors: Michael C. Johnson, Taiqing Qiu, David D. Smith, Peter John Cousins, Staffan Westerberg
  • Patent number: 9997661
    Abstract: A method of making a copper oxide/inorganic thin film tandem semiconductor device including the steps of: depositing a textured buffer layer on an amorphous substrate, depositing a copper-inorganic film from a solid phase eutectic alloy on said buffer layer, and introducing O2 to the copper on said inorganic film, forming a copper oxide thin film on said inorganic film.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: June 12, 2018
    Assignee: Solar-Tectic LLC
    Inventor: Ashok Chaudhari
  • Patent number: 9997707
    Abstract: The invention relates generally to perovskite materials, and in particular, to perovskite thin films having large crystalline grains. Methods of forming the perovskite thin films are disclosed herein. The perovskite thin films find particular use in photovoltaic applications.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: June 12, 2018
    Assignee: NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Ning Wang, Xiaowei Sun
  • Patent number: 9997687
    Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.
    Type: Grant
    Filed: January 9, 2017
    Date of Patent: June 12, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Shih-I Chen, Chia-Liang Hsu, Tzu-Chieh Hsu, Han-Min Wu, Ye-Ming Hsu, Chien-Fu Huang, Chao-Hsing Chen, Chiu-Lin Yao, Hsin-Mao Liu, Chien-Kai Chung
  • Patent number: 9997647
    Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a substrate, an emitter region positioned at one surface of the substrate, a first insulating layer including a lower layer positioned on the emitter region and an upper layer positioned on the lower layer, and a first electrode which is formed of a first conductive paste and is electrically connected to the emitter region. The first insulating layer includes a plurality of first contact holes, and a portion of the first electrode is filled in the plurality of first contact holes.
    Type: Grant
    Filed: January 4, 2012
    Date of Patent: June 12, 2018
    Assignee: LG ELECTRONICS INC.
    Inventors: Yoonsil Jin, Goohwan Shim, Youngho Choe, Jaewon Chang
  • Patent number: 9991058
    Abstract: A method for producing a solar cell, including: an electrolyte-supplying step of supplying an electrolyte onto a plate-shaped first electrode at a region thereof positioned between a pair of first sealing portions respectively provided along two opposing lateral sides of the plate-shaped first electrode; an electrodes-laminating step of superposing a second electrode on the first electrode gradually from one end side toward the other end side as viewed in a direction along the lateral sides of the first electrode while bonding the second electrode to the first electrode at the first sealing portions, the second electrode including a flexible plate-shaped substrate having a hole penetrating through the substrate in a thicknesswise direction thereof and capable of discharging the electrolyte therethrough; and a sealing step of bonding the first electrode and the second electrode at a pair of second sealing portions.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: June 5, 2018
    Assignee: SEKISUI CHEMICAL CO., LTD.
    Inventor: Tomohiro Ootsuka
  • Patent number: 9991279
    Abstract: A method for manufacturing an electronic device includes forming a first source layer including a trench, forming a first sacrificial layer in the trench, forming a first structure over the first source layer, wherein the first structure includes first material layers and second material layers which are alternately stacked over the each other, forming first openings passing through the first structure and extending to the first sacrificial layer, forming first channel layers in the first openings, forming a slit passing through the first structure and extending to the first sacrificial layer, forming a second opening by removing the first sacrificial layer through the slit, and forming a second source layer in the second opening, wherein the second source layer is coupled to the first channel layers.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: June 5, 2018
    Assignee: SK Hynix Inc.
    Inventors: Ki Hong Lee, Ji Yeon Baek, Seung Ho Pyi
  • Patent number: 9978889
    Abstract: Conductive contacts for solar cells and methods of forming conductive contacts for solar cells are described. For example, a solar cell includes a substrate. A conductive contact is disposed on the substrate. The conductive contact includes a layer composed of a first metal species having a plurality of pores. The conductive contact also includes a second metal species disposed in the plurality of pores. Portions of both the first and second metal species are in contact with the substrate.
    Type: Grant
    Filed: September 8, 2015
    Date of Patent: May 22, 2018
    Assignee: SunPower Corporation
    Inventor: Xi Zhu
  • Patent number: 9972728
    Abstract: A solar cell module includes an encapsulating member and a sealing layer for sealing a solar cell, and further includes a solar cell having a transparent conductive layer on its front surface. The solar cell includes a coating layer formed over the transparent conductive layer and having a plurality of openings, and a collecting electrode positioned in the openings of the coating layer and including a primary conductive layer containing copper. An undercoat layer is provided between the primary conductive layer of the collecting electrode and the transparent conductive layer. The coating layer and the undercoat layer are both composed of a resin.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: May 15, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Yoshikazu Ibara, Toyozou Nishida
  • Patent number: 9966478
    Abstract: A method for producing at least one electric contact by electrochemical deposition of an electrically conducting material on a face of a photovoltaic cell, the contact being formed by first and second lines connected to one another, the second line presenting a larger width than the width of the first line, the method including, before electrochemical deposition, a formation step of at least one area presenting a lower electric conductivity than the electric conductivity of the electrically conducting material, on a part of the face of the photovoltaic cell designed to be electrically connected with the second line, at the level of its intersection with the first line.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: May 8, 2018
    Assignee: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Fabien Ozanne
  • Patent number: 9966533
    Abstract: A method of fabricating an organic photovoltaic device. The method includes providing a first electrode which by applying a layer of conductive material onto a transparent substrate. The conductive material forms the first electrode. The method also includes placing an active layer of organic photovoltaic material on top of the first electrode. The active layer is configured to convert photonic energy into electrical energy. Placing an active layer of organic photovoltaic material includes placing an active layer of organic photovoltaic material having ferroelectric dipoles dispersed therein. The method further includes applying a second electrode on top of the active layer of organic photovoltaic material.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: May 8, 2018
    Assignee: Iowa State University Research Foundation, Inc.
    Inventors: Kanwar Singh Nalwa, Sumit Chaudhary
  • Patent number: 9966484
    Abstract: A process for preparing a passivated emitter rear contact solar cell, which includes the steps as follows: removing the damaged layer on the surface of the silicon wafer and at the same time polishing both surfaces, texturing, forming PN junction, etching, removing the glass impurity, depositing a passivation film on the back surface, depositing a passivating antireflective layer on the front surface, making local openings on the back surface, screen printing of metal paste on both the front surface and the back surface and sintering, in which the texturing step employs a catalytic metal etching approach, and the textured structure is a nanometer-level textured structure. The present invention has combined removing the damaged layer on the surface of the silicon wafer and polishing both the front and back surfaces into one single step, and thus has simplified the production process and reduced the production cost.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: May 8, 2018
    Assignee: CSI CELLS CO., LTD
    Inventors: Shuai Zou, Weixu Long, Xusheng Wang, Guoqiang Xing
  • Patent number: 9966483
    Abstract: Patterning planar photo-absorbing materials into arrays of nanowires is demonstrated as a method for increasing the total photon absorption in a given thickness of absorbing material. Such a method can provide faster, cheaper, and more efficient photo-detectors and solar cells. A thin nanowire can absorb many more photons than expected from the size of the nanowire. The reason for this effect is that such nanowires support cylindrical particle resonances which can collect photons from an area larger than the physical cross-section of the wire. These resonances are sometimes referred to as Mie resonances or Leaky Mode Resonances (LMRs). The nanowires can have various cross section shapes, such as square, circle, rectangle, triangle, etc.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: May 8, 2018
    Assignee: The Board of Trustees of the Leland Stanford Junior University
    Inventors: Linyou Cao, Pengyu Fan, Alok Vasudev, Jon A. Schuller, Mark L. Brongersma
  • Patent number: 9966198
    Abstract: Solar cells are provided which comprise an electron transporting layer and a light sensitizing layer of perovskite disposed over the surface of the electron transporting layer. The perovskite may have a formula selected from the group consisting of A2MX6, Z2MX6 or YMX6, wherein A is an alkali metal, M is a metal or a metalloid, X is a halide, Z is selected from the group consisting of a primary ammonium, an iminium, a secondary ammonium, a tertiary ammonium, and a quaternary ammonium, and Y has formula Mb(L)3, wherein Mb is a transition metal in the 2+ oxidation state L is an N—N neutral chelating ligand. Methods of making the solar cells are also provided, including methods based on electrospray deposition.
    Type: Grant
    Filed: April 24, 2015
    Date of Patent: May 8, 2018
    Assignee: Northwestern University
    Inventors: Mercouri G. Kanatzidis, Robert P. H. Chang, Konstantinos Stoumpos, Byunghong Lee
  • Patent number: 9960625
    Abstract: A method of managing a battery system using a battery management system. The method includes receiving, measured characteristics of one or more battery cells from one or more sensors, receiving, estimated parameters of the battery cells, estimating, one or more states of the battery cells by applying a battery model based on the measured characteristics and the estimated parameters of the battery cells, updating, at least a portion of the estimated parameters based at least in part on the estimation of the states of the battery cells by applying two or more separate battery models, updating, the one or more states of the battery cells based at least in part on the updated estimated parameters of the battery cells, and regulating charging or discharging of the battery based on the updated estimation of the states of the battery cells.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: May 1, 2018
    Assignee: Robert Bosch GmbH
    Inventors: Reinhardt Klein, Anahita MirTabatabaei, Nalin Chaturvedi, Aleksandar Kojic
  • Patent number: 9960037
    Abstract: A method for forming a compound on a substrate is provided. The method includes depositing a composition onto a surface of a substrate; illuminating the composition and the substrate with pulsed energy; melting the substrate and decomposing the composition simultaneously; and forming a compound on the substrate. A first component of the compound is derived from the substrate and a second component of the compound is derived from the composition.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: May 1, 2018
    Assignee: Board Of Trustees Of Michigan State University
    Inventors: Premjeet Chahal, Tim Hogan, Amanpreet Kaur
  • Patent number: RE47088
    Abstract: A nitride semiconductor structure and a semiconductor light emitting device are revealed. The semiconductor light emitting device includes a substrate disposed with a first type doped semiconductor layer and a second type doped semiconductor layer. A light emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The second type doped semiconductor layer is doped with a second type dopant at a concentration larger than 5×1019 cm?3 while a thickness of the second type doped semiconductor layer is smaller than 30 nm. Thereby the semiconductor light emitting device provides a better light emitting efficiency.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: October 16, 2018
    Assignee: Genesis Photonics Inc.
    Inventors: Yen-Lin Lai, Jyun-De Wu, Yu-Chu Li