Abstract: Iron-based photosensitizers, which can be used for solar energy conversion and photoluminescence applications, include an iron complex with N-heterocyclic carbene (NHC) ligands (FeNHC), a linking unit, and a polarizable unit formed of a pi conjugated structure having a one-electron reduction potential more positive than NHC.

Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

Abstract: An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xpi1 of proportion of tin less than xps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin xps1, and vertical structures having an average value xps2 of proportion of tin greater than xps1, thus forming regions for emitting or for receiving infrared radiation.

Abstract: A photovoltaic assembly dual junction solar cell for space use including a solar cell stack including first and second subcells stacked on each other and each including an epitaxially grown light absorbing layer. The first subcell is adjacent to a solar cell stack front, light-receiving surface and the second subcell is adjacent to a solar cell stack rear surface. The first subcell light absorbing layer has a larger bandgap than the second subcell light absorbing layer. A light reflecting element positioned adjacent to a second subcell light absorbing layer rear side is configured to reflect photons having an energy smaller than the bandgap energy of the second subcell light absorbing layer and/or photons having an energy larger than the bandgap energy of the second subcell light absorbing layer and smaller than the bandgap energy of the first subcell light absorbing layer with a reflectivity of at least 90%.

Abstract: A system for connecting electronic assemblies and/or for manufacturing workpieces has a plurality of modules for connecting the electronic assemblies and/or for manufacturing the workpieces. At least one module is a loading station and one is an unloading station, or one module is a loading station and unloading station. At least one further module is a manufacturing station, and a manufacturing workpiece carrier is provided for accommodating the electronic assemblies and/or workpieces which is movable in automated manner by a conveying unit from the loading station via the manufacturing station to the unloading station. A multiple gripper is provided by which at least two electronic assemblies and/or workpieces are simultaneously placeable onto the manufacturing workpiece carrier. A foil/film transfer unit and a foil/film detachment unit and a manufacturing workpiece carrier with at least two workpieces is provided.

Abstract: A method of patterning a thin-film photovoltaic layer stack includes the steps of providing a continuous layer stack comprising a planar substrate, a first electrode layer on the substrate and a photovoltaic layer on the first electrode layer, immersing the layer stack into an electrically conductive solution, applying a bias voltage between the electrolyte solution and the first electrode layer and converting a first material or a first material composition provided in at least a first portion of the layer stack into a first reaction product by an electrochemical reaction, wherein the first reaction product has an electrical conductivity that is lower than an electrical conductivity of the first material or first material composition, or removing a first material or a first material composition provided in at least a first portion of the layer stack by an electrochemical reaction.

Abstract: An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, especially in the field of solar cells and other energy conversion devices.

Abstract: A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.

Abstract: An apparatus and method for producing a perpetual energy harvester which harvests ambient near ultraviolet to infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester, providing a continuous source of power. Additionally, increased power output is provided through a solar harvester. The solar and thermal harvesters are physically connected but electrically isolated. “Perpetual energy harvester” as mentioned in this invention is interpreted to mean an energy harvester which is configured to harvest energy during day and/or night and/or light and/or dark.

Abstract: A cable coater system for a downhole tool includes a cable coater. The cable coater may include a housing and one or more rollers that are coupled to the housing, wherein the one or more rollers are configured to rest on the downhole cable while guiding the cable through openings in the cable coater during wireline operations. The cable coater may remain on cable during all spooling (on and off) activities for the duration of operations and activated to coat the cable upon the final pull out of hole and prior to storage of the cable. The spooling in and out of the cable may further be automatically controlled by providing a positional indicator of the cable coater and thus where the cable is in three-dimensional space relative the spool.

Abstract: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.

Abstract: Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

Abstract: An element module includes an element, a plurality of conductive members, and a spacer member. The plurality of conductive members are connected to the element and arranged in a predetermined direction. The spacer member is disposed between two conductive members of the plurality of conductive members adjacent to each other in the predetermined direction and is in contact with parts of the two conductive members.

Abstract: Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ?min?0 to an upper limiting angular frequency ?max where ?max>?min. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ?* in the stopband, so that ?min<?*<?max. The angular frequencies ?* correspond to electronic excitations ??* from valence band tail (VBT) states of the amorphous photovoltaic material to conduction band tail (CBT) states of the amorphous photovoltaic material.

Abstract: The present invention relates to a method for assembling molecules on the surface of a two-dimensional material formed on a substrate, the method comprises: forming a spacer layer comprising at least one of an electrically insulating compound or a semiconductor compound on the surface of the two-dimensional material, depositing molecules on the spacer layer, annealing the substrate with spacer layer and the molecules at an elevated temperature for an annealing time duration, wherein the temperature and annealing time are such that at least a portion of the molecules are allowed to diffuse through the spacer layer towards the surface of the two-dimensional material to assemble on the surface of the two-dimensional material. The invention also relates to an electronic device.

Abstract: The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.

Abstract: A hybrid organic-inorganic solar cell is provided that includes a substrate, a transparent conductive oxide (TCO) layer deposited on the substrate, an n-type electron transport material (ETM) layer, a p-type hole transport material (HTM) layer, an i-type perovskite layer, and an electrode layer, where the substrate layers are arranged in an n-i-p stack, or a p-i-n stack, where the passivating barrier layer is disposed between the layers of the (i) perovskite and HTM, (ii) perovskite and ETM, (iii) perovskite and HTM, and perovskite and ETM, or (iv) TCO and ETM, and ETM and perovskite, and perovskite and HTM, or (v) substrate and TCO, and TCO and ETM, and ETM and perovskite, and perovskite layer and HTM, or (vi) a pair of ETM layers, or (vii) a pair of HTM layers.

Abstract: In one implementation, a method for a solar cell array is provided, the method includes emitting a communication message from the solar cell array by reverse biasing the solar cell array so as to cause at least a portion of the solar array to emit a detectable amount of radiation corresponding to the communication message. In one embodiment a solar cell array circuit is provided including a solar string comprising a plurality of solar cells coupled together, a charge storage device coupled to a power bus, and a bidirectional boost-buck converter having a first and second pair of MOSFETs connected in series between positive and negative rails of the power bus with an inductor coupled from between the first and second paired MOSFETs to a charging output of the solar string.

Abstract: A device for treating a product with microwaves includes a treatment chamber, in which the product can be transported along a transport path in a transport direction through the treatment chamber, and a microwave radiation device arranged in the treatment chamber, by means of which microwaves coupled into the microwave radiation device can be radiated, which act on the product, wherein the microwave radiation device includes at least one coaxial conductor which protrudes into the treatment chamber, or is arranged therein, with an electrically-conductive internal conductor and an electrically-conductive external conductor, wherein the external conductor, arranged coaxially, surrounds the internal conductor in a spaced manner and includes at least one opening, which enables an emission of microwaves from the coaxial conductor through the opening on to the product.

Abstract: A method of manufacturing a solar cell, includes forming a rounded uneven member having a rounded end portion at a second surface of a semiconductor substrate having a first surface and the second surface opposite to each other, forming conductive regions comprising forming a first conductive region at the first surface of the semiconductor substrate and forming a second conductive region on the second surface of the semiconductor substrate, wherein the second conductive region comprises a semiconductor layer different and separated from the semiconductor substrate and forming electrodes comprising forming a first electrode electrically connected to the first conductive region and forming a second electrode electrically connected to the second conductive region.

Abstract: A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance.

Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.

Abstract: In an imaging element 28, a first light detecting layer 12 includes an organic photoelectric conversion film 38 that detects light of a predetermined wavelength band and carries out photoelectric conversion, and photoelectrically converts incident light on the imaging element and light reflected from a wire grid polarizer layer 14. The wire grid polarizer layer 14 includes polarizers 48 in which linear materials that do not allow transmission of light therethrough are arranged at intervals shorter than the wavelength of the incident light. A second light detecting layer 16 includes photoelectric conversion elements 54 that photoelectrically convert light transmitted through the polarizers 48.

Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately on the back surface of the silicon substrate; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions. One of the plurality of first conductive regions and the plurality of second conductive regions is disposed inside the plurality of recesses, respectively, and the other one is disposed outside the plurality of recesses; each first conductive region includes a first dielectric layer and a first doped region which are disposed successively, and each second conductive region includes a second doped region.

Abstract: A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j?[0.97, 7.58].

Abstract: The present disclosure is directed to a method of processing a solar cell device. The method comprises detecting at least one inconsistency at a surface of a semiconductor substrate having a solar cell active region formed therein. A deposition pattern is determined based on the location of the at least one inconsistency. A material is selectively deposited on the substrate according to the deposition pattern.

Abstract: Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.

Abstract: A method of producing photovoltaic cells with the ?-tandem architecture based on crystalline silicon substrates and quantum dots, ensuring both effective and stable operation of the entire tandem system as well as high absorption in the spectral range from UV to MIR and operation in scattered and incident light conditions at different angles, acting as an anti-reflective layer. A further purpose of the invention is to develop a new structure of a ?-tandem photovoltaic cell based on microcrystalline silicon (Si) layers and a layer of nanometric semiconductor structures with a core-shell architecture such that the resulting structures work as a tandem cell with the characteristics of micro-cells, connected together in its lower part.

Abstract: A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. A first recess cavity is formed over a gate electrode, and a second recess cavity is formed over the epitaxial semiconductor material portion. The second recess cavity is vertically recessed to form a connector via cavity. A metallic cap structure is formed on the gate electrode in the first recess cavity, and a connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.

Abstract: An antenna electrode including a first electrode that includes a core and a first conductive surface; a second electrode that includes a second conductive surface; and an electrical tunnel junction between the first conductive surface and the second conductive surface, the tunnel junction having a gap width greater than about 0.1 nm and less than about 10 nm.

Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

Abstract: A method of generating electricity from light, that uses a photovoltaic array, that includes a junction between an inorganic electron-donating layer and an inorganic electron-accepting layer. The electron-donating layer includes moieties which after photon activation have unpaired electrons, and wherein some of the electrons are freed when light strikes the electron-donating layer, thereby transforming the moieties into free radicals or equivalents but many of the freed electrons recombine. Also, many of the free radicals or equivalents in the triplet state are optimally responsive to a selective magnetic field that has been determined to optimally increase the lifetime of the triplet state of the free radicals and thereby forestall recombination of the freed electrons into the free radicals. A magnetic field of substantially the optimal strength that is substantially unvarying over the electron donating layer is created as the array is being exposed to light.

Abstract: A solar cell apparatus 100 and a method for forming said solar cell apparatus 100, comprising a substrate 101, a n-type transparent conductive oxide (TCO) layer 102 deposited atop said substrate 101, a p-i-n structure 200 that includes a p-type layer 103, an i-type layer 104, a n-type layer 105, a metal back layer 106 deposited atop said n-type layer 105 of the p-i-n structure 200. The n-type layer 105 comprises n-type donors 115 including phosphorus atoms. The n-type donors 115 include oxygen atoms at an atomic concentration comprised between 5% and 25% of the overall atomic composition of the n-type layer 105.

Abstract: A CMOS sensor includes a silicon material having a surface periodic structure of silicon portions and non-silicon portions, formed by multiple supercells repeated in a 2-dimensional lattice pattern. Each image pixel of the sensor has at least 2×2 supercells. The lattice constants in both lateral directions are within a range defined by a wavelength of the light to be sensed. Within each supercell, the non-silicon portions create an effective refractive index for the light that changes gradually with depth. The non-silicon portions within the supercell have lateral feature sizes smaller the wavelength of the light to be sensed, and vertical feature sizes larger than the wavelength of the light to be sensed. In some examples, each supercell includes at least two inverted pyramids having different base sizes and/or different heights. A dielectric material fills the non-silicon portions of the periodic structure and covers the silicon material.

Abstract: Thin-film solar cell modules and serial cell-to-cell interconnect structures and methods of fabrication are described. In an embodiment, a solar cell interconnect includes a bypass diode between adjacent solar cells to allow the flow of current around a single solar cell.

Abstract: A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j?[0.97, 7.58].

Abstract: A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.

Abstract: The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.

Abstract: In a solar power generator, a plurality of first solar cell strings (51) are formed in a way that, in each first solar cell string (51), two or more first solar cells (41) are connected in series and disposed in descending order of potential, with an end narrower in width facing one end (E1) in a first direction (D1), from another end (E2) in the first direction (D1). A plurality of second solar cell strings (52) are formed in a way that, in each second solar cell string (52), two or more second solar cells (42) are connected in series and disposed in descending order of potential, with an end wider in width facing the one end (E1) in the first direction (D1), from the another end (E2) in the first direction (D1). Each of the plurality of first solar cell strings (51) and each of the plurality of second solar cell strings (52) are aligned alternately along the second direction (D2) that is orthogonal to the first direction (D1).

Abstract: Systems and methods of three-terminal tandem solar cells are described. Three-terminal metal electrodes can be formed to contact subcells of the tandem solar cell. The three-terminal tandem cell can improve the device efficiency to at least 30%.

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by less than or about 3% hydrogen incorporation.

Abstract: A laminated seed layer stack with a smooth top surface having a peak to peak roughness of 0.5 nm is formed by sequentially sputter depositing a first seed layer, a first amorphous layer, a second seed layer, and a second amorphous layer where each seed layer may be Mg and has a resputtering rate 2 to 30X that of the amorphous layers that are TaN, SiN, or a CoFeM alloy. A template layer that is NiCr or NiFeCr is formed on the second amorphous layer. As a result, perpendicular magnetic anisotropy in an overlying magnetic layer that is a reference layer, free layer, or dipole layer is substantially maintained during high temperature processing up to 400° C. and is advantageous for magnetic tunnel junctions in embedded MRAMs, spintronic devices, or in read head sensors. The laminated seed layer stack may include a bottommost Ta or TaN buffer layer.

Abstract: A solar cell device includes a light-transmissive substrate, a solar cell module, an optical composite film assembly, and a light-transmissive top plate. The solar cell module is disposed on the light-transmissive substrate and includes a solar cell unit. The optical composite film assembly is light-transmissive, and includes a light diffusion layer and a fiber layer. The optical composite film assembly and the solar cell module are disposed on each other. The light-transmissive top plate is disposed spaced apart from the light-transmissive substrate and cooperates with the light-transmissive substrate to sandwich the solar cell module and the optical composite film assembly.

Abstract: A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j?[0.97, 7.58].

Abstract: According to one embodiment, film formation apparatus includes: a carrying unit that includes a rotation table which circulates and carries a workpiece; a film formation process unit which includes a target formed of a silicon material, and a plasma producer that produces plasma of a sputter gas introduced between the target and the rotation table, and which forms a silicon film on the workpiece by sputtering; and a hydrogenation process unit which includes a process gas introducing unit that introduces a process gas containing a hydrogen gas, and a plasma producer that produces plasma of the process gas, and which performs hydrogenation on the silicon film formed on the workpiece. The carrying unit carries the workpiece so as to alternately pass through the film formation process unit and through the hydrogenation process unit.

Abstract: A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula SinH2n, wherein n is 5, 6, or 7.

Abstract: A solid junction-type photoelectric conversion element (10) including a first conductive layer (2), an electric power generation layer (4), and a second conductive layer (6), which are laminated in this order, wherein the electric power generation layer (4) comprises: a perovskite compound represented by a composition formula ABX3, formed of an organic cation A, a metal cation B and a halide anion X, and a compound Z having no perovskite structure.

Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance.

Abstract: The present disclosure provides a solar cell and a method for producing same. The solar cell includes: a substrate; a first passivation film, an anti-reflection layer and at least one first electrode formed on a front surface of the substrate; and a tunneling layer, a field passivation layer and at least one second electrode formed on a rear surface. The field passivation layer includes a first field passivation sub-layer and a second field passivation sub-layer; a conductivity of the first field passivation sub-layer is greater than a conductivity of the second field passivation sub-layer, and a thickness of the second field passivation sub-layer is smaller than a thickness of the first field passivation sub-layer; either the at least one first electrode or the at least one second electrode includes a silver electrode, a conductive adhesive and an electrode film that are sequentially formed in a direction away from the substrate.