Abstract: A solar panel mount that retains a solar panel in an installed position. The solar panel mount can include a panel rest having a seating surface for the solar panel. The solar panel mount can further have a first support structure defining a first retaining channel positioned to receive a first edge of the solar panel in an installed position. The solar panel mount can further include second support structure defining a second retaining channel. The first and second retaining channels can be spatially positioned apart from each other at a distance greater than a length of the solar panel such that the first and second retaining channels are positioned to receive respective first and second edges of the solar panel to secure the solar panel in the installed position.

Abstract: A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

Abstract: A welding method for a welding strip of a back-contact solar cell chip includes the following steps: firstly, welding small chip assemblies of a back-contact solar cell to be interconnected to form a small cell string through an interconnected bar; then, punching the small cell string into small cell assemblies separated from each other through a cutting or punching process; subsequently, flexibly welding the small cell assemblies by a bus bar to reach a required length of a finished assembly product; and finally, breaking the bus bar through a post cutting or punching process to form cell assemblies with positive and negative electrodes connected in series or in parallel. The method makes the welding surfaces of the solar cell chips be on the same surface through using the back-contact solar cell chips, so that the interconnected bar of the solar cell chips can be welded rapidly and continuously.

Abstract: A compound semiconductor substrate has a Si (silicon) substrate, a first Al nitride semiconductor layer which is a graded layer formed on the Si substrate and whose Al concentration decreases as the distance from the Si substrate increases along the thickness direction, a GaN (gallium nitride) layer formed on the first Al nitride semiconductor layer and having a lower average Al concentration than the average Al concentration of the first Al nitride semiconductor layer, and a second Al nitride semiconductor layer formed on the GaN layer and having a higher average Al concentration than the average Al concentration of the GaN layer. The threading dislocation density at any position in the thickness direction within the second Al nitride semiconductor layer is lower than the threading dislocation density at any position in the thickness direction within the first Al nitride semiconductor layer.

Abstract: According to one or more embodiments, an intelligent solar racking system is provided. The intelligent solar racking system includes a racking frame that receives and mechanically supports solar modules. The intelligent solar racking system includes sensors distributed throughout the racking frame. Each of the sensors detects and reports parameter data by generating output signals. The sensors include module sensors positioned to associate with each of the solar modules and detect a module presence as the parameter data for the solar modules. The intelligent solar racking system includes a computing device that receives, stores, and analyzes the output signals to determine and monitor operations of the intelligent solar racking system.

Abstract: A method includes forming, on a substrate by performing physical vapor deposition in vacuum, an absorber layer including copper (Cu), indium (In), gallium (Ga) and selenium (Se), forming a stack including the substrate and an oxygen-annealed absorber layer by performing in-situ oxygen annealing of the absorber layer to improve quantum efficiency of the image sensor by passivating selenium vacancies due to dangling bonds, and forming a cap layer over the oxygen-annealed absorber layer by performing physical vapor deposition in vacuum. The cap layer includes at least one of: Ga2O3·Sn, ZnS, CdS, CdSe, ZnO, ZnSe, ZnIn2Se4, CuGaS2, In2S3, MgO, or Zn0.8Mg0.2O.

Abstract: There is provided a thin film manufacturing method which allows both a reduction in the carbon impurity concentration and a high film forming speed, as well as allows separate formation of stable crystal structures. There is provided a method for manufacturing an oxide crystal thin film. The method includes carrying raw material fine particles to a film forming chamber by means of a carrier gas, the raw material fine particles being formed from a raw material solution including water and at least one of a gallium compound and an indium compound, and forming an oxide crystal thin film on a sample on which films are to be formed, the sample being placed in the film forming chamber. At least one of the gallium compound and the indium compound is bromide or iodide.

Abstract: Discussed is a solar cell module including a plurality of solar cells including a first electrode and a second electrode, the plurality of solar cells being disposed along a first direction and a plurality of wiring members connected to the first electrode of a first solar cell and the second electrode of a second solar cell, wherein each of the plurality of solar cells includes a first side surface of one side in the first direction, a second side surface having a larger surface roughness than the first side surface on another side, and a protrusion formed adjacent to the second side surface, and wherein the first and second solar cells are disposed with a gap of approximately 0.5 mm to 1.5 mm, and the first side surface of the second solar cell and the second side surface of the first solar cell are disposed to face each other.

Abstract: A solar module racking system including a frame. The frame includes pre-wired receptacles for rapid assembly of solar modules. The frame receives and mechanically supports each solar module. The frame arranges the solar modules in a first planar direction, in a second planar direction, and in a vertical direction that is normal to the first and second planar directions. Each pre-wired receptacles individually and electrically connect each of the solar modules after insertion of that module into the frame. The solar module racking system provides a 2 by 1 by 1 configuration or a 1 by 2 by 1 configuration for the plurality of solar modules corresponding to the first planar direction, the second planar direction, and the vertical direction. A first module and a second module are arranged in the first planar direction or the second planar direction, respectively.

Abstract: Disclosed are embodiments of a thin-film photovoltaic technology including a single-junction crystalline silicon solar cell with a photonic-plasmonic back-reflector structure for lightweight, flexible energy conversion applications. The back-reflector enables high absorption for long-wavelength and near-infrared photons via diffraction and light-concentration, implemented by periodic texturing of the bottom-contact layer by nanoimprint lithography. The thin-film crystalline silicon solar cell is implemented in a heterojunction design with amorphous silicon, where plasma enhanced chemical vapor deposition (PECVD) is used for all device layers, including a low-temperature crystalline silicon deposition step. Excimer laser crystallization is used to integrate crystalline and amorphous silicon within a monolithic process, where a thin layer of amorphous silicon is converted to a crystalline silicon seed layer prior to deposition of a crystalline silicon absorber layer via PECVD.

Abstract: The invention relates to a thin film solar module comprising a monolithic solar cell array (1), including a plurality of solar cells (2) with a layer structure, comprising a rear contact layer (3), a front contact layer (4) and an absorber layer between the rear contact layer and the front contact layer, and an electrical connection structure (6) for electrically serially connecting neighbouring solar cells. The invention also relates to an associated production method. In the thin film solar module according to the invention, the electrical connection structure includes contact strips (7) for electrically serially connecting neighbouring solar cells, wherein the electrical connection structure electrically serially connects two respective solar cells (2m, 2m+1) that are adjacent to one another in a series connection direction (RS) via one or more contact strips (7).

Abstract: In a method of manufacturing a negative capacitance structure, a ferroelectric dielectric layer is formed over a first conductive layer disposed over a substrate, and a second conductive layer is formed over the ferroelectric dielectric layer. The ferroelectric dielectric layer includes an amorphous layer and crystals.

Abstract: A tandem photovoltaic device and production method. The tandem photovoltaic device includes: an upper battery cell and a lower battery cell, and a tunnel junction located between the upper battery cell and the battery cell; the lower battery is a crystalline silicon cell; the tunnel junction includes: an upper crystalline silicon layer, a lower crystalline silicon layer and an intermediate layer located between the upper crystalline silicon layer and the lower crystalline silicon layer; the upper crystalline silicon layer, the lower crystalline silicon layer and the intermediate layer are in direct contact, and the doping types of the upper crystalline silicon layer and the lower crystalline silicon layer are opposite; the doping concentration of the upper crystalline silicon layer at the interface with the intermediate layer and the doping concentration of the lower crystalline silicon layer at the interface with the intermediate layer are greater than or equal to 1018 cm?3.

Abstract: A resin composition for a solar cell encapsulant that is used for forming a solar cell encapsulant, the resin composition including at least one kind of ethylene-polar monomer copolymer (A1) selected from an ethylene-vinyl ester copolymer and an ethylene-unsaturated carboxylic acid ester copolymer, an epoxy group-containing ethylene-based copolymer (A2) (excluding the ethylene-polar monomer copolymer (A1)), an ethylene-?-olefin copolymer (B), and a metal inactivating agent (C).

Abstract: The present disclosure is directed to a method of processing a solar cell device. The method comprises detecting at least one inconsistency at a surface of a semiconductor substrate having a solar cell active region formed therein. A deposition pattern is determined based on the location of the at least one inconsistency. A material is selectively deposited on the substrate according to the deposition pattern.

Abstract: The solar cell includes a substrate having electrode regions and non-electrode regions alternatingly. The electrode regions have a first surface, the non-electrode regions have a second surface, and the first surface has a smaller roughness than the second surface. The solar cell further includes a first tunneling dielectric layer formed over the first surface, a first doped conductive layer arranged on a side of the first tunneling dielectric layer, a passivation layer formed over the second surface and the first doped conductive layer, and at least one first electrode. The at least one first electrode are arranged in the electrode regions, each of the at least one first electrode includes a connecting electrode formed over the electrode regions and multiple spot electrodes. The multiple spot electrodes are arranged below the connecting electrode and connected to the connecting electrode.

Abstract: The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.

Abstract: A solar module includes at least one first solar cell and at least one second solar cell, each solar cell including a top side and bottom side, a bus bar, and a plurality of wires, disposed on the top side, extending from and electrically connected to the bus bar. The first solar cell overlaps a region of the second solar cell to electrically connect to the second solar cell and to form a shingled arrangement, and in the second solar cell, the plurality of wires connect to the bus bar outside of the region in which the first solar cell overlaps the second solar cell. A method of manufacturing a solar module includes shingling solar cells using ECA to make a hybrid dense solar cell string that includes at least two hybrid dense solar cells in a shingled arrangement.

Abstract: Iron-based photosensitizers, which can be used for solar energy conversion and photoluminescence applications, include an iron complex with N-heterocyclic carbene (NHC) ligands (FeNHC), a linking unit, and a polarizable unit formed of a pi conjugated structure having a one-electron reduction potential more positive than NHC.

Abstract: A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.

Abstract: An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xpi1 of proportion of tin less than xps1, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin xps1, and vertical structures having an average value xps2 of proportion of tin greater than xps1, thus forming regions for emitting or for receiving infrared radiation.

Abstract: A photovoltaic assembly dual junction solar cell for space use including a solar cell stack including first and second subcells stacked on each other and each including an epitaxially grown light absorbing layer. The first subcell is adjacent to a solar cell stack front, light-receiving surface and the second subcell is adjacent to a solar cell stack rear surface. The first subcell light absorbing layer has a larger bandgap than the second subcell light absorbing layer. A light reflecting element positioned adjacent to a second subcell light absorbing layer rear side is configured to reflect photons having an energy smaller than the bandgap energy of the second subcell light absorbing layer and/or photons having an energy larger than the bandgap energy of the second subcell light absorbing layer and smaller than the bandgap energy of the first subcell light absorbing layer with a reflectivity of at least 90%.

Abstract: A system for connecting electronic assemblies and/or for manufacturing workpieces has a plurality of modules for connecting the electronic assemblies and/or for manufacturing the workpieces. At least one module is a loading station and one is an unloading station, or one module is a loading station and unloading station. At least one further module is a manufacturing station, and a manufacturing workpiece carrier is provided for accommodating the electronic assemblies and/or workpieces which is movable in automated manner by a conveying unit from the loading station via the manufacturing station to the unloading station. A multiple gripper is provided by which at least two electronic assemblies and/or workpieces are simultaneously placeable onto the manufacturing workpiece carrier. A foil/film transfer unit and a foil/film detachment unit and a manufacturing workpiece carrier with at least two workpieces is provided.

Abstract: A method of patterning a thin-film photovoltaic layer stack includes the steps of providing a continuous layer stack comprising a planar substrate, a first electrode layer on the substrate and a photovoltaic layer on the first electrode layer, immersing the layer stack into an electrically conductive solution, applying a bias voltage between the electrolyte solution and the first electrode layer and converting a first material or a first material composition provided in at least a first portion of the layer stack into a first reaction product by an electrochemical reaction, wherein the first reaction product has an electrical conductivity that is lower than an electrical conductivity of the first material or first material composition, or removing a first material or a first material composition provided in at least a first portion of the layer stack by an electrochemical reaction.

Abstract: An emission enhancement structure having at least one energy augmentation structure; and an energy converter capable of receiving energy from an energy source, converting the energy and emitting therefrom a light of a different energy than the received energy. The energy converter is disposed in a vicinity of the at least one energy augmentation structure such that the emitted light is emitted with an intensity larger than if the converter were remote from the at least one energy augmentation structure. Also described are various uses for the energy emitters, energy augmentation structures and energy collectors in a wide array of fields, especially in the field of solar cells and other energy conversion devices.

Abstract: A backside emitter solar cell structure having a heterojunction, and a method and a device for producing the same. A backside intrinsic layer is first formed on the back side of the substrate, then a frontside intrinsic layer and a frontside doping layer are formed on the front side of the substrate, and finally a backside doping layer is formed on the back side of the substrate.

Abstract: An apparatus and method for producing a perpetual energy harvester which harvests ambient near ultraviolet to infrared radiation and provides continual power regardless of the environment. The device seeks to harvest the largely overlooked blackbody radiation through use of a semiconductor thermal harvester, providing a continuous source of power. Additionally, increased power output is provided through a solar harvester. The solar and thermal harvesters are physically connected but electrically isolated. “Perpetual energy harvester” as mentioned in this invention is interpreted to mean an energy harvester which is configured to harvest energy during day and/or night and/or light and/or dark.

Abstract: A cable coater system for a downhole tool includes a cable coater. The cable coater may include a housing and one or more rollers that are coupled to the housing, wherein the one or more rollers are configured to rest on the downhole cable while guiding the cable through openings in the cable coater during wireline operations. The cable coater may remain on cable during all spooling (on and off) activities for the duration of operations and activated to coat the cable upon the final pull out of hole and prior to storage of the cable. The spooling in and out of the cable may further be automatically controlled by providing a positional indicator of the cable coater and thus where the cable is in three-dimensional space relative the spool.

Abstract: A method is provided for preparing at least one textured layer in an optoelectronic device. The method includes epitaxially growing a semiconductor layer of the optoelectronic device over a growth substrate; exposing the semiconductor layer to an etching process to create the at least one textured surface on the semiconductor layer; and lifting the optoelectronic device from the growth substrate.

Abstract: Methods for light-induced electroplating of aluminum are disclosed herein. Exemplary methods may comprise preparing an ionic liquid comprising aluminum chloride (AlCl3) and an organic halide, placing the silicon substrate into the ionic liquid, illuminating the silicon substrate, the illumination passing through the ionic liquid, and depositing aluminum onto the silicon substrate via a light-induced electroplating process, wherein the light-induced electroplating process utilizes an applied current that does not exceed a photo-generated current generated by the illumination.

Abstract: Photovoltaic device with band-stop filter. The photovoltaic device includes an amorphous photovoltaic material and a band-stop filter structure having a stopband extending from a lower limiting angular frequency ?min?0 to an upper limiting angular frequency ?max where ?max>?min. The band-stop filter structure is arranged in the photovoltaic device relative to the photovoltaic material in order to attenuate electromagnetic radiations reaching the photovoltaic material with angular frequencies of ?* in the stopband, so that ?min<?*<?max. The angular frequencies ?* correspond to electronic excitations ??* from valence band tail (VBT) states of the amorphous photovoltaic material to conduction band tail (CBT) states of the amorphous photovoltaic material.

Abstract: The present invention relates to a method for assembling molecules on the surface of a two-dimensional material formed on a substrate, the method comprises: forming a spacer layer comprising at least one of an electrically insulating compound or a semiconductor compound on the surface of the two-dimensional material, depositing molecules on the spacer layer, annealing the substrate with spacer layer and the molecules at an elevated temperature for an annealing time duration, wherein the temperature and annealing time are such that at least a portion of the molecules are allowed to diffuse through the spacer layer towards the surface of the two-dimensional material to assemble on the surface of the two-dimensional material. The invention also relates to an electronic device.

Abstract: An element module includes an element, a plurality of conductive members, and a spacer member. The plurality of conductive members are connected to the element and arranged in a predetermined direction. The spacer member is disposed between two conductive members of the plurality of conductive members adjacent to each other in the predetermined direction and is in contact with parts of the two conductive members.

Abstract: The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.

Abstract: A hybrid organic-inorganic solar cell is provided that includes a substrate, a transparent conductive oxide (TCO) layer deposited on the substrate, an n-type electron transport material (ETM) layer, a p-type hole transport material (HTM) layer, an i-type perovskite layer, and an electrode layer, where the substrate layers are arranged in an n-i-p stack, or a p-i-n stack, where the passivating barrier layer is disposed between the layers of the (i) perovskite and HTM, (ii) perovskite and ETM, (iii) perovskite and HTM, and perovskite and ETM, or (iv) TCO and ETM, and ETM and perovskite, and perovskite and HTM, or (v) substrate and TCO, and TCO and ETM, and ETM and perovskite, and perovskite layer and HTM, or (vi) a pair of ETM layers, or (vii) a pair of HTM layers.

Abstract: In one implementation, a method for a solar cell array is provided, the method includes emitting a communication message from the solar cell array by reverse biasing the solar cell array so as to cause at least a portion of the solar array to emit a detectable amount of radiation corresponding to the communication message. In one embodiment a solar cell array circuit is provided including a solar string comprising a plurality of solar cells coupled together, a charge storage device coupled to a power bus, and a bidirectional boost-buck converter having a first and second pair of MOSFETs connected in series between positive and negative rails of the power bus with an inductor coupled from between the first and second paired MOSFETs to a charging output of the solar string.

Abstract: A device for treating a product with microwaves includes a treatment chamber, in which the product can be transported along a transport path in a transport direction through the treatment chamber, and a microwave radiation device arranged in the treatment chamber, by means of which microwaves coupled into the microwave radiation device can be radiated, which act on the product, wherein the microwave radiation device includes at least one coaxial conductor which protrudes into the treatment chamber, or is arranged therein, with an electrically-conductive internal conductor and an electrically-conductive external conductor, wherein the external conductor, arranged coaxially, surrounds the internal conductor in a spaced manner and includes at least one opening, which enables an emission of microwaves from the coaxial conductor through the opening on to the product.

Abstract: A method of manufacturing a solar cell, includes forming a rounded uneven member having a rounded end portion at a second surface of a semiconductor substrate having a first surface and the second surface opposite to each other, forming conductive regions comprising forming a first conductive region at the first surface of the semiconductor substrate and forming a second conductive region on the second surface of the semiconductor substrate, wherein the second conductive region comprises a semiconductor layer different and separated from the semiconductor substrate and forming electrodes comprising forming a first electrode electrically connected to the first conductive region and forming a second electrode electrically connected to the second conductive region.

Abstract: A method of performing HVPE heteroepitaxy comprises exposing a substrate to a carrier gas, a first precursor gas, a Group II/III element, and ternary-forming gasses (V/VI group precursor), to form a heteroepitaxial growth of a binary, ternary, and/or quaternary compound on the substrate; wherein the carrier gas is Hz, wherein the first precursor gas is HCl, the Group II/III element comprises at least one of Zn, Cd, Hg, Al, Ga, and In; and wherein the ternary-forming gasses comprise at least two or more of AsH3 (arsine), PH3 (phosphine), H2Se (hydrogen selenide), HzTe (hydrogen telluride), SbH3 (hydrogen antimonide, or antimony tri-hydride, or stibine), H2S (hydrogen sulfide), NH3 (ammonia), and HF (hydrogen fluoride); flowing the carrier gas over the Group II/III element; exposing the substrate to the ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio); and changing the 1tf:2tf ratio over time.

Abstract: The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. The object of the invention is to propose a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which the effects on materials caused by irradiation of the sun-facing side are further minimized. In addition, the method should also be applicable to silicon solar cells in which the emitter layer has a high sheet resistance.

Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.

Abstract: In an imaging element 28, a first light detecting layer 12 includes an organic photoelectric conversion film 38 that detects light of a predetermined wavelength band and carries out photoelectric conversion, and photoelectrically converts incident light on the imaging element and light reflected from a wire grid polarizer layer 14. The wire grid polarizer layer 14 includes polarizers 48 in which linear materials that do not allow transmission of light therethrough are arranged at intervals shorter than the wavelength of the incident light. A second light detecting layer 16 includes photoelectric conversion elements 54 that photoelectrically convert light transmitted through the polarizers 48.

Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately on the back surface of the silicon substrate; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions. One of the plurality of first conductive regions and the plurality of second conductive regions is disposed inside the plurality of recesses, respectively, and the other one is disposed outside the plurality of recesses; each first conductive region includes a first dielectric layer and a first doped region which are disposed successively, and each second conductive region includes a second doped region.

Abstract: A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j?[0.97, 7.58].

Abstract: The present disclosure is directed to a method of processing a solar cell device. The method comprises detecting at least one inconsistency at a surface of a semiconductor substrate having a solar cell active region formed therein. A deposition pattern is determined based on the location of the at least one inconsistency. A material is selectively deposited on the substrate according to the deposition pattern.

Abstract: Embodiments of the present disclosure relate to photovoltaic devices, CIGS containing films, and methods of manufacturing CIGS containing films and photovoltaic devices to improve quantum efficiency, reduce interface charges, electron losses, and electron re-combinations. The CIGS layers in the photovoltaic devices described herein may be deposited using physical vapor deposition, followed by in-situ oxygen annealing, and further followed by deposition of a cap layer over the CIGS layer without subjecting the CIGS layer to an air break.

Abstract: A method of producing photovoltaic cells with the ?-tandem architecture based on crystalline silicon substrates and quantum dots, ensuring both effective and stable operation of the entire tandem system as well as high absorption in the spectral range from UV to MIR and operation in scattered and incident light conditions at different angles, acting as an anti-reflective layer. A further purpose of the invention is to develop a new structure of a ?-tandem photovoltaic cell based on microcrystalline silicon (Si) layers and a layer of nanometric semiconductor structures with a core-shell architecture such that the resulting structures work as a tandem cell with the characteristics of micro-cells, connected together in its lower part.

Abstract: A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. A first recess cavity is formed over a gate electrode, and a second recess cavity is formed over the epitaxial semiconductor material portion. The second recess cavity is vertically recessed to form a connector via cavity. A metallic cap structure is formed on the gate electrode in the first recess cavity, and a connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.

Abstract: An antenna electrode including a first electrode that includes a core and a first conductive surface; a second electrode that includes a second conductive surface; and an electrical tunnel junction between the first conductive surface and the second conductive surface, the tunnel junction having a gap width greater than about 0.1 nm and less than about 10 nm.

Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.