Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: The disclosure relates to glass compositions with high coefficients of thermal expansion and low fracture toughness designed for thermal tempering. These glasses are ideally suited to produce a “dicing” pattern when thermally tempered, even when thin (<3 mm). Disclosed glasses have high thermal expansions at low and high temperatures to produce increased temper stresses once quenched, coupled with low fracture toughness which promotes crack bifurcation and enhanced frangibility. Methods of making such glasses are also provided.

Abstract: An elevated photosensor for image sensors and methods of forming the photosensor. The photosensor may have light sensors having indentation features including, but not limited to, v-shaped, u-shaped, or other shaped features. Light sensors having such an indentation feature can redirect incident light that is not absorbed by one portion of the photosensor to another portion of the photosensor for additional absorption. In addition, the elevated photosensors reduce the size of the pixel cells while reducing leakage, image lag, and barrier problems.

Abstract: Provided are methods, systems, and apparatuses providing flexible conductive substrates for nanomaterial/perovskite-based optoelectronic devices. One such apparatus may include a flexible conductive substrate, a nanomaterial layer disposed on the flexible conductive substrate, and a perovskite layer disposed on the nanomaterial layer. The flexible conductive substrate may be a cost-effective metal sheet such as a stainless steel sheet or an aluminum sheet. The nanomaterial layer may comprise semiconductor or oxide nanorods, nanowires, nanotubes, or nanoparticles, such as gadolinium-doped zinc oxide nanorods. The perovskite layer may comprise inorganic or organic perovskite. The apparatus may further include an optically transparent conductive layer disposed on the perovskite layer. Optionally, the apparatus may include an electrical contact disposed on a portion of the optically transparent conductive layer.

Abstract: A mist generating apparatus sprays a surface of an object (P) to be treated with a carrier gas (CGS) of mist (Mst) of a solution containing fine particles or molecules of a material substance, so that a layer of the material substance is deposited on the surface of the object (P) to be treated. The mist generating device includes a mist generator (14) for atomizing the solution to feed the carrier gas (CGS) containing the mist (Mst), and an ultraviolet irradiator (20B) for applying ultraviolet rays having a wavelength of 400 nm or lower to the mist (Mst) floating in the carrier gas (CGS) in a flow path extending from the mist generator (14) until the carrier gas (CGS) is sprayed on the surface of the object (P) to be treated.

Abstract: The photoelectric conversion layer of an embodiment is based on Cu2O, contains at least one p-type dopant selected from the group consisting of Ge, Ta, and In, and has a band gap of equal to or more than 2.10 eV and equal to or less than 2.30 eV.

Abstract: A mist generating apparatus sprays a surface of an object (P) to be treated with a carrier gas (CGS) of mist (Mst) of a solution containing fine particles or molecules of a material substance, so that a layer of the material substance is deposited on the surface of the object (P) to be treated. The mist generating device includes a mist generator (14) for atomizing the solution to feed the carrier gas (CGS) containing the mist (Mst), and an ultraviolet irradiator (20B) for applying ultraviolet rays having a wavelength of 400 nm or lower to the mist (Mst) floating in the carrier gas (CGS) in a flow path extending from the mist generator (14) until the carrier gas (CGS) is sprayed on the surface of the object (P) to be treated.

Abstract: Semitransparent chalcogen solar cells and techniques for fabrication thereof are provided. In one aspect, a method of forming a solar cell includes: forming a first transparent contact on a substrate; depositing an n-type layer on the first transparent contact; depositing a p-type chalcogen absorber layer on the n-type layer, wherein a p-n junction is formed between the p-type chalcogen absorber layer and the n-type layer; depositing a protective interlayer onto the p-type chalcogen absorber layer, wherein the protective interlayer fully covers the p-type chalcogen absorber layer; and forming a second transparent contact on the interlayer, wherein the interlayer being disposed between the p-type chalcogen absorber layer and the second transparent contact serves to protect the p-n junction during the forming of the second transparent contact. Solar cells and other methods for formation thereof are also provided.

Abstract: A method of reworking lithium containing ion exchanged glass-based articles is provided. The method includes a reverse ion exchange process that returns the glass-based article to approximately the composition of the glass from which the glass-based article was produced, before being subjected to ion exchange.

Abstract: Disclosed is a semiconductor-liquid junction based photoelectrochemical (PEC) cell for the unassisted solar splitting of water into hydrogen and oxygen gas, the solar-driven reduction of CO2 to higher-order hydrocarbons, and the solar-driven synthesis of NH3. The disclosed system can employ a photocathode based upon wurtzite hexagonal semiconductors that can be tailored with proper band alignment for the redox potentials for water, CO2 reduction, and NH3 production, and with bandgap energy for maximum solar absorption. The design maximizes the carrier collection efficiency by leveraging spontaneous and piezoelectric polarization in these materials systems to generate hot electrons within the photocathode. These electrons have sufficient excess energy, preserved at a designed energy capture region, to overcome the kinetic overpotential (surface chemistry limitation) required for the reactions to occur at a high rate.

Abstract: The present invention aims to provide a solar cell that includes a photoelectric conversion layer containing an organic-inorganic perovskite compound and that can exhibit high photoelectric conversion efficiency and high heat resistance. Provided is a solar cell including, in the stated order: a cathode; a photoelectric conversion layer; and an anode, the photoelectric conversion layer containing an organic-inorganic perovskite compound represented by the formula R-M-X3 where R is an organic molecule, M is a metal atom, and X is a halogen atom or a chalcogen atom, and a polymer having an acid dissociation constant pKa of 3 or less.

Abstract: An optical boroaluminate glass article comprises: from greater than or equal to 10.0 mol % to less than or equal to 30.0 mol % Al2O3; from greater than or equal to 10.0 mol % to less than or equal to 55.0 mol % CaO; from greater than or equal to 10.0 mol % to less than or equal to 25.0 mol % B2O3; from greater than or equal to 0.0 mol % to less than or equal to 30.0 mol % SiO2; and from greater than or equal to 1.0 mol % to less than or equal to 20.0 mol % refractive index raising components. The optical boroaluminate glass article has a refractive index of the glass article, measured at 589.3 nm, of greater than or equal to 1.62, and a density of less than or equal to 4.00 g/cm3.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

Abstract: A processing arrangement comprising: a process chamber comprising an upper chamber wall, a lower chamber wall and two lateral chamber walls; an insulating structure, arranged between the processing region and each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, for thermally insulating the processing region, wherein the insulating structure is configured as gas-permeable at least in sections in such a way that a process gas from the processing region can flow out of the processing region in the direction in each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, through the insulating structure; and a gas channel, arranged between the insulating structure and each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, for pumping away the process gas which flows through the insulating structure.

Abstract: A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.

Abstract: In some examples, the disclosure describes a film including a rare-earth element-doped metal stannate exhibiting an electrical conductivity of at least about 104 S/cm at room temperature, where the metal includes at least one of barium, strontium, calcium, or zinc.

Abstract: There is described a cascade-type compact hybrid energy cell (CHEC) that is capable of individually and concurrently harvesting solar, strain and thermal energies. The cell comprises an n-p homojunction nanowire (NW)-based piezoelectric nanogenerator and a nanocrystalline/amorphous-Si:H single junction cell. Under optical illumination of ˜10 mW/cm2 and mechanical vibration of 3 m/s2 at 3 Hz frequency, the output current and voltage from a single 1.0 cm2-sized CHEC was found to be 280 ?A and 3.0 V, respectively—this is are sufficient to drive low-power commercial electronics. Six such CHECs connected in series were found to generate enough electrical power to light emitting diodes or drive a wireless strain gauge sensor node.

Abstract: A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a transition metal layer on a substrate. A semiconductor chalcogenide material layer is deposited over the chalcogen-resistant material. The conductive elongated nanostructures, if present, can reduce contact resistance by providing direct electrically conductive paths from the transition metal layer through the chalcogen-resistant material and to the semiconductor chalcogenide material. The high work function material layer, if present, can reduce contact resistance by blocking chalcogenization of the transition metal in the transition metal layer. Reduction of the contact resistance can enhance efficiency of a solar cell including the chalcogenide semiconductor material.

Abstract: Provided is an apparatus that can check in real time a process of removing light induced degradation using precise carrier injection through an AC power supply device (power unit). An apparatus for reduction of light induced degradation with carrier injection includes: a housing in which high-temperature heat treatment is performed on a solar battery cell; a heating unit that is formed in the housing, on which the solar battery cell is seated, and that heats the solar battery cell; a jig unit that is formed in the housing and fixes the solar battery cell to the heating unit by pressing the solar battery cell seated on the heating unit; an LED array unit that has a plurality of LED light sources and radiates light to the solar battery cell; and a driving unit that is coupled to the jig unit and the LED array unit and rotates the jig unit or the LED array unit.

Abstract: A sensor including a layer of amorphous selenium (a-Se) and at least one charge blocking layer is formed by depositing the charge blocking layer over a substrate prior to depositing the amorphous selenium, enabling the charge blocking layer to be formed at elevated temperatures. Such a process is not limited by the crystallization temperature of a-Se, resulting in the formation of an efficient charge blocking layer, which enables improved signal amplification of the resulting device. The sensor can be fabricated by forming first and second amorphous selenium layers over separate substrates, and then fusing the a-Se layers at a relatively low temperature.

Abstract: A semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. A thickness of the semiconductor structure ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method. The carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.

Abstract: An organic solar cell includes a substrate; a first electrode; a second electrode disposed opposite the first electrode; a photoactive layer that is disposed between the first electrode and the second electrode, and that comprises n-type organic semiconductor material and p-type organic semiconductor material; and an intermediate layer that is disposed on at least one surface of the photoactive layer and that contains a compound represented by Formula 1 below: where R1, R2, R3, R4, R5, and R6 are each independently selected from the group consisting of hydrogen atoms, a carbonyl group, a hydroxyl group, a nitro group, an amino group, a sulfonyl group, a phosphoryl group, straight-chain or branched C1-C7 alkyl groups, and straight-chain or branched C8-C20 alkyl groups, wherein R1, R2, R3, R4, R5, and R6 are not all the same. The organic solar cells have enhanced photostability due to introduction of the intermediate layer.

Abstract: The present disclosure relates to a photosensitive organic capacitor whose capacitance efficiency is increased if light is applied to the photosensitive organic capacitor, and the photosensitive organic capacitor includes an upper substrate and a lower substrate that are spaced apart by a certain interval, an upper electrode and a lower electrode that are attached to each opposing side of the upper substrate and lower substrate, an active layer that is formed between the upper electrode and the lower electrode, and an upper polarization-inducing layer and a lower polarization-inducing layer that are formed between the upper electrode and the active layer and between the lower electrode and the active layer, and that induce the polarization of charges within the active layer if light is applied to the photosensitive organic capacitor.

Abstract: Provided is a method of fabricating a CIGS absorption layer which, may have improved material utilization and productivity and have excellent thin film uniformity even in a large area by depositing and heat treating a precursor having a multilayer structure by a sputtering method using a compound, target of InxGaySez(IGS) and CuxSey (CS).

Abstract: A method of creating cadmium telluride films is presented. The method demonstrates heterogeneous nucleation of CdTe directly on a substrate through sequential deposition of aqueous precursor solutions containing cadmium and telluride ions, respectively. The method can include (i) applying a cadmium precursor solution to the substrate to form a cadmium precursor film on the substrate, (ii) applying a telluride precursor solution to the cadmium precursor film. The telluride precursor solution includes Te2? in solution such that a CdTe film is adherently formed directly on the substrate.

Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.

Abstract: A targeted-annealing system can automatically cure a conductive paste that may bind cascaded strips of a string together without damaging the strips. The targeted-annealing system can process strings of cascaded strips on a supporting surface, and can anneal conductive paste between overlapping strips by blowing heated air on the overlapping sections of the strips. An air nozzle shaped to target the overlapping sections may provide the heated air. The supporting surface may include a porous material that allows a vacuum to pull on the cascaded strips from below the surface during the annealing process.

Abstract: A planar mixed-metal perovskite solar cell can exhibit many favorable properties including high efficiencies and tunable electronic properties. The incorporation of different metal species (i.e. Co, Cu, Fe, Mg, Mn, Ni, Sn, Sr, and Zn) into the film is made possible by the solubility of either each metal's divalent acetate or halide compound in a solvent.

Abstract: A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium.

Abstract: A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Abstract: Provided are a mixed metal halide perovskite compound, and an electronic device including the same, wherein the mixed metal halide perovskite compound includes an organic cation, two or more kinds of metal cations, and a halogen anion.

Abstract: A method to produce thin film solar cells in superstrate or substrate configuration is an efficient way to minimize the loss due to absorption in CdS layer and to eliminate the CdCl2 activation treatment step. This is achieved by applying a sacrificial metal-halide layer between the CdS-layer and the CdTe-layer of the solar cells.

Abstract: A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu—Zn—Sn—S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Abstract: A solar cell is provided wherein a circular polarizer is positioned proximate a transparent conductor layer which itself is separated from a loop of conductive metal by an electrically insulative layer. Upon exposure to non-polarized light, a portion of the incident light is polarized and transmitted to the transparent conductor layer. Under the influence of this polarized light, free electrons in the conductor layer are induced to move in a circular motion, thereby generating magnetic fields. These magnetic fields drive the flow of current within the conductive metal loop.

Abstract: Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, a first window layer including a first oxide on the light absorbing layer, and a second window layer provided on the first window layer and including a second oxide having a composition ratio of oxygen higher than a composition ratio of oxygen contained in the first oxide.

Abstract: A method (200) and deposition zone apparatus (300) for fabricating thin-film optoelectronic devices (100), the method comprising: providing a potassium-nondiffusing substrate (110), forming a back-contact layer (120); forming at least one absorber layer (130) made of an ABC chalcogenide material, adding at least two different alkali metals, and forming at least one front-contact layer (150) wherein one of said at least two different alkali metals is potassium and where, following forming said front-contact layer, in the interval of layers (470) from back-contact layer (120), exclusive, to front-contact layer (150), inclusive, the comprised amounts resulting from adding at least two different alkali metals are, for potassium, in the range of 500 to 10000 ppm and, for the other of said at least two different alkali metals, in the range of 5 to 2000 ppm and at most ½ and at least 1/2000 of the comprised amount of potassium.

Abstract: In one aspect of the present invention, a photovoltaic device is provided. The photovoltaic device includes a window layer and an absorber layer disposed on the window layer, wherein the absorber layer includes a first region and a second region, the first region disposed adjacent to the window layer. The absorber layer further includes a first additive and a second additive, wherein a concentration of the first additive in the first region is greater than a concentration of the first additive in the second region, and wherein a concentration of the second additive in the second region is greater than a concentration of the second additive in the first region. Method of making a photovoltaic device is also provided.

Abstract: A method of forming a metal chalcogenide material. The method comprises exposing a metal to a solution comprising a chalcogenide element source compound and an acid. Methods of forming memory cells including the metal chalcogenide material are also disclosed.

Abstract: Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).

Abstract: Described herein is a method of using the buffer layer of a transparent conductive substrate as a dopant source for the n-type window layer of a photovoltaic device. The dopant source of the buffer layer distributes to the window layer of the photovoltaic device during semiconductor processing. Described herein are also methods of manufacturing embodiments of the substrate structure and photovoltaic device. Disclosed embodiments also describe a photovoltaic module and a photovoltaic structure with a plurality of photovoltaic devices having an embodiment of the substrate structure.

Abstract: A completed photovoltaic device and method forming it are described in which fluxing of a window layer into an absorber layer is mitigated by the presence of a sacrificial fluxing layer.

Abstract: Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent.

Abstract: Embodiments include methods of depositing and controlling the deposition of a film in multiple stages. The disclosed deposition and deposition control methods include the optical monitoring of a deposition matrix to determine a time when at least one transition point occurs. In certain embodiments, the transition point or transition points are a stoichiometry point. Methods may also include controlling the length of time in which material is deposited during a deposition stage or controlling the amount of the first, second or subsequent materials deposited during any deposition stage in response to a determination of the time when a selected transition point occurs.

Abstract: A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

Abstract: The invention provides for a nanostructure, or an array of such nanostructures, each comprising a rough surface, and a doped or undoped semiconductor. The nanostructure is an one-dimensional (1-D) nanostructure, such a nanowire, or a two-dimensional (2-D) nanostructure. The nanostructure can be placed between two electrodes and used for thermoelectric power generation or thermoelectric cooling.

Abstract: Aspects describe phthalocyanine (Pc) molecules with peripheral modifications of its core (e.g., alkyl substituents) so that the Pc can self assemble, for example under vacuum sublimation, and form nanocrystals of a size on the order of nanometers. The Pc nanocrystals can be prepared, for example, by a simple vapor deposition method. Further aspects describe a polymer composite ink based Pc nanocrystals in a polymer matrix, which can be formed, for example, under a solution process approach. For example, the polymer matrix can be a different p-type conjugated polymer from the Pc nanocrystals, which are inherently p-type semiconductors. This can increase the film formation ability and charge transport properties of the polymer composite ink. The polymer composite ink can be utilized, for example, in the fabrication of optoelectronic devices, such as photovoltaic devices and/or thin film transistors. The optoelectronic devices can exhibit high power conversion efficiency (PCE), for example 6-7 percent.

Abstract: A photovoltaic cell can include a nitrogen-containing metal layer in contact with a semiconductor layer.

Abstract: Certain example embodiments of this invention relate to articles including anticondensation coatings that are exposed to an external environment, and/or methods of making the same. In certain example embodiments, the anticondensation coatings may be survivable in an outside environment. The coatings also may have a sufficiently low sheet resistance and hemispherical emissivity such that the glass surface is more likely to retain heat from the interior area, thereby reducing (and sometimes completely eliminating) the presence condensation thereon. The articles of certain example embodiments may be, for example, skylights, vehicle windows or windshields, IG units, VIG units, refrigerator/freezer doors, and/or the like.

Abstract: An apparatus and method for converting an amorphous transparent conductive oxide to a crystalline form with the assistance of irradiation of a laser.