Abstract: Designs of extremely high efficiency solar cells are described. A novel alternating bias scheme enhances the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. When applied in conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. When applied in conjunction with solar cells incorporating quantum wells (QWs) or quantum dots (QDs) based solar cells, the described alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.

Abstract: A thin film solar cell is disclosed comprising the following layers deposited on a substrate: a microcrystalline p- or n-layer, an intermediate microcrystalline silicon i-layer applied by a hot-wire chemical-vapor deposition (HWCVD) method on the microcrystalline p- or n-layer a), an additional i-layer of microcrystalline silicon, which is formed by depositing on the intermediate microcrystalline silicon i-layer, by a plasma enhanced chemical vapor deposition (PECVD), a sputtering process, or a photo-CVD method whereby layers b) and c) together form an i-layer, and if a p-layer is present as the layer of step a), an n-layer, and if an n-layer is present as the layer of step a), a p-layer that is either microcrystalline or amorphous.

Abstract: Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.

Abstract: Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?535° C., for example, ?570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. The segregated phase domain structure includes a segregated phase domain array. The plurality of domain structures includes i) a copper rich. indium/gallium deficient Cu(In,Ga)Se2 domain and ii) a copper deficient, indium/gallium rich Cu(In,Ga)Se2 domain.

Abstract: A solar cell module includes a substrate, a lower electrode on the substrate, a light absorption layer on the lower electrode, an upper electrode on the light absorption layer, and a protective layer on the upper electrode, the protective layer extending along sidewalls of the light absorption layer to the lower electrode, the protective layer including a moisture absorbing material.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: Novel structures of photovoltaic cells (also known as solar cells) are provided. The Cells are based on the nanometer-scaled wire, tubes, and/or rods, which are made of the electronics materials covering semiconductors, insulator or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells can have also high radiation tolerant capability. These cells will have enormous applications such as in space, in commercial, residential and industrial applications.

Abstract: Novel structures of photovoltaic cells (also treated as solar cells) are provided. The cells are based on nanometer-scaled wires, tubes, and/or rods, which are made of electronic materials covering semiconductors, insulators or metallic in structure. These photovoltaic cells have large power generation capability per unit physical area over the conventional cells. These cells will have enormous applications in space, commercial, residential, and industrial applications.

Abstract: A photovoltaic device is presented. The device includes a first semiconductor layer disposed on a second semiconductor layer. The first semiconductor layer includes a compound having a metal species, sulfur, and oxygen. The metal species may include zinc, magnesium, tin, indium, or a combination thereof. Method for making a photovoltaic device is also presented.

Abstract: A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.

Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

Abstract: A photovoltaic cell is made by coating a metal foil substrate with cadmium telluride powder, moving the powder coated foil across a cold plate or series of cooled rollers to prevent the substrate from melting, while melting the cadmium telluride powder by passing the powder coated foil under a microwave energy source. This forms a thin film of cadmium telluride on the foil. The cadmium telluride coated foil is then coated with cadmium sulfide powder, which is melted by passing the powder coated foil under a microwave energy source, thereby creating a P-N junction, and the cadmium sulfide layer is coated with indium, which is fused to the cadmium sulfide layer by microwave heating.

Abstract: A new photovoltaic (PV) cell structure, prepared on transparent substrate with transparent conductive oxide (TCO) layer and having nanorod zinc oxide layer. The cell has a thin conductive layer of doped zinc oxide deposited on the nanorod zinc oxide layer, an extremely thin blocking layer of titanium oxide or indium sulfide on the thin conductive layer, a buffer layer of indium sulfide on the extremely thin blocking layer, an absorber layer, comprising copper indium disulfide on said buffer layer and one electrode attached to the transparent conductive oxide layer and a second electrode attached to the absorber layer. Also, a method of preparing a zinc oxide nanorod PV cell entirely by chemical spray pyrolysis is disclosed. Efficiency up to 3.9% is achieved by simple continuous non-vacuum process.

Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: A method of fabricating a solar cell involves electroplating a Group IIB-VIA material as a first or sub-layer over a junction partner layer, and then forming a second layer, also of a Group IIB-VIA material over the sub-layer. Both the sub-layer and the second layer comprise Te. The electroplating is performed at relatively low temperatures, as for example, below 100° C. Forming the sub-layer by low temperature electroplating produces a small grained compact film that protects the interface between the sub-layer and the junction partner during the formation of the second layer. The second layer may be formed by physical vapor deposition or ink deposition. A solar cell has a first layer of a stoichiometric Group IIB-VIA material formed on a CdS film, and a second layer of a Group IIB-V1A material. Both the first and second layers contain Te. The first layer may comprise CdTe with a grain size small than 0.5 microns and the second layer may comprise CdTe with a grin size in the range of 1-5 microns.

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: CTE-matched silicate glasses and more particularly to low-alkali CTE-matched silicate glasses that are useful in semiconductor-based applications, such as photovoltaics are described along with methods of making such glasses.

Abstract: A method for forming a back contact for a photovoltaic cell that includes at least one semiconductor layer is provided. The method includes applying a continuous film of a chemically active material on a surface of the semiconductor layer and activating the chemically active material such that the activated material etches the surface of the semiconductor layer. The method further includes removing the continuous film of the activated material from the photovoltaic cell and depositing a metal contact layer on the etched surface of the semiconductor layer.

Abstract: A photovoltaic cell can include a heterojunction between semiconductor layers. The first semiconductor layer can include a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer. A second semiconductor layer can include a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact.

Abstract: Electron-deficient fluorous porphyrin molecules may have dual functions of light harvesting and electron accepting or donating and may be ideally suited for use in organic solar cells. Methods of making electron-deficient fluorous porphyrin molecules are described.

Abstract: The present application is directed to a film they may be used as an adhesive for solar panels. For example, the present application is directed to a composition, for example an adhesive composition, comprising a low crystalline poly-alpha-olefin resin having and an alkoxysilane functional poly-alpha-olefin having a tensile strength of less than 500 MPa. The composition has a melt flow index of less than 30. The application is also directed to a panel comprising a front panel comprising a transparent barrier, a back panel and a photovoltaic material layer between the front panel and the back panel. An adhesive layer is between the front panel and the back panel, wherein the adhesive layer adheres the front panel to the back panel, and the adhesive layer comprises a low crystalline poly-alpha-olefin elastomer blended with an alkoxysilane functional polyolefin.

Abstract: Photovoltaic devices and methods of making the same are disclosed herein. The cell comprises: a first electrically conductive layer; at least one photoelectrochemical layer comprising metal-oxide particles, an electrolyte solution, an asphaltene dye, and a second electrically conductive layer.

Abstract: A device including a glass substrate made of a soda lime silica glass composition of: SiO2 (50˜75 wt %); Na2O (1˜8 wt %); K2O (1˜12 wt %); CaO (1˜12 wt %); ZrO2 (0˜8 wt %); SrO (0˜15 wt %); BaO (0˜12 wt %); MgO (0˜10 wt %); Al2O3 (0˜12 wt %); B2O3 (0˜3 wt %), wherein the total amount of Na2O and K2O is in the range of 5˜15 wt %, the total amount of CaO, MgO, SrO and BaO is in the range of 10˜25 wt %.

Abstract: Methods for improving the efficiency of solar cells, and a solar cell thereof. One aspect involves a solar cell with a semiconductor layer (11, 12, 13, 14, 15, 16, 17) with a natural band gap NB (NB2, NB3, NB4, NB5, NB6, NB7). This semiconductor layer also has at least one electrode (100, 101, 110, 111, 120, 121) designed to produce an ambient voltage V (V1, V2, V3, V4, V5, V6, V7) into the layer. The incoming photons therefore experience a modified NB?V=B band gap (B1, B2, B3, B4, B5, B6, B7), referred here to as the apparent band gap. Photons with E>B1 will be absorbed into the band gap B, and the electron in the semiconductor valence band will get excited onto the conduction band thus resulting in photocurrent. The ability to tune the apparent band gap B provides an enormous strength to optimize the incoming photon collection.

Abstract: In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support; and thermally processing the substantially amorphous cadmium tin oxide layer in an atmosphere substantially free of cadmium from an external source to form a transparent layer, wherein the transparent layer has an electrical resistivity less than about 2×10?4 Ohm-cm. Method of making a photovoltaic device is also provided.

Abstract: A photovoltaic device having n-i-p or p-i-n configuration is presented. The device includes a first semiconductor layer, a second semiconductor layer and an intrinsic layer interposed between the first semiconductor layer and the second semiconductor layer. The intrinsic layer includes cadmium, tellurium and oxygen. Method of making a photovoltaic device is also provided.

Abstract: A package structure and a solar cell with the same are provided. The package structure includes a transparent package bulk and at least one structure capable of changing a direction of light. The structure is disposed within the transparent package bulk and at a distance from a surface of the transparent package bulk. When applied to a solar cell, the package structure can reduce gridline shading.

Abstract: Leaching alkali ions from a glass substrate to form a glass substrate having an intrinsic alkali barrier layer includes providing a glass substrate comprising alkali metal ions and having at least two opposing surfaces and a thickness between the surfaces, and contacting at least one of the surfaces of the substrate with a solution comprising alkaline earth salts in either water or as a melted salt bath such that at least a portion of the alkali metal ions are replaced by alkaline earth metal ions in the at least one surface and into the thickness to form the glass substrate having an intrinsic alkali barrier layer.

Abstract: A non-aqueous electrolyte battery includes a battery element, a film-form casing member, and a resin protective layer. The battery element includes a positive electrode, a negative electrode, and a separator disposed between the positive electrode and the negative electrode. The film-form casing member contains the battery element and an electrolyte in an enclosed space thereof. The resin protective layer is formed along the surface of the film-form casing member and has a substantially uniform thickness.

Abstract: This disclosure provides photovoltaic apparatus and methods of forming the same. In one implementation, a method of forming a photovoltaic device includes forming a plurality of substrate features on a surface of a glass substrate, the substrate features having a depth dimension in the range of about 10 ?m to about 1000 ?m and a width dimension in the range of about 10 ?m to about 1000 ?m. The method further includes forming a thin film solar cell over the surface of the glass substrate including over the plurality of substrate features.

Abstract: A solar cell. The solar cell includes a substrate, a first layer comprising a first copper-based material deposited upon the substrate, the first copper-based material electrically attracted to the substrate or to a first optional deposit layer deposited between the substrate and the first layer, and a second layer comprising a second copper-based material deposited upon the first layer or an second optional deposit layer deposited between the first layer and the second layer, the second copper-based material electrically attracted to the first layer or to the second optional deposit layer, wherein the first copper-based material and the second copper-based material are selected from the group consisting of copper indium gallium (di)selenide (CIGS), copper indium selenium (CIS), and cadmium sulfate (CdS).

Abstract: The present invention provides a semiconductor film which adapts to the solar cell in both of band gap and electric resistivity or carrier concentration. In the present invention, a semiconductor film is composed of a semiconductor including group 11 elements, group 12 elements, group 13 elements and group 16 element of the ratio indicated as a composition formula (1) in below, AxByCzDw??(1) wherein A, B, C and D indicate said group 11 elements, said group 12 elements, said group 13 elements and said group 16 elements, respectively, x, y, z and w are respectively numbers indicating a composition ratio, and x and z satisfy a relationship of x/z>1.

Abstract: A photovoltaic device includes an absorber layer comprising a material comprising cadmium and tellurium. The photovoltaic device further includes a p+-type semiconductor layer and an interlayer interposed between the absorber layer and the p+-type semiconductor layer. The interlayer comprises manganese. The photovoltaic device may be manufactured as a substrate-based device or as a superstrate base device.

Abstract: Provided are solar cells and methods of manufacturing the same. The solar cell includes a first electrode, a second electrode facing and separated from the first electrode, and a quantum dot-graphine hybrid composite disposed between the first and second electrodes. Quantum dots are combined with graphine in a ?-bond within the quantum dot-graphine hybrid composite.

Abstract: Solar cells and methods for manufacturing solar cells and/or components or layers thereof are disclosed. An example method for manufacturing a multi-bandgap quantum dot layer for use in a solar cell may include providing a first precursor compound, providing a second precursor compound, and combining a portion of the first precursor compound with a portion of the second precursor compound to form a multi-bandgap quantum dot layer that includes a plurality of quantum dots that differ in bandgap.

Abstract: This disclosure provides photovoltaic apparatus and methods of forming the same. In one implementation, a photovoltaic device includes an anode contact structure, a cathode contact structure, and an inorganic solar cell disposed between the anode and cathode contact structures. The inorganic solar cell includes a p-type photovoltaic layer, an n-type photovoltaic layer, and one or more minority carrier blocking layers for improving the efficiency of the solar cell by preventing minority carriers within the solar cell from reaching interface recombination surfaces associated with the anode and cathode contact structures.

Abstract: The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient.

Abstract: A dye-sensitized photoelectric converter with enhanced light absorptance and photoelectric conversion efficiency is provided. The dye-sensitized photoelectric converter includes a transparent substrate (e.g., glass), a (negative) electrode composed of a transparent conductive layer such as FTO (fluorine-doped tin(IV) oxide SnO2), a semiconductor layer holding multiple types of photosensitizing dyes, an electrolyte layer, a counter (positive) electrode, a counter substrate, and a sealing medium (not illustrated). In some embodiments, the multiple types of photosensitizing dyes have minimum excitation energies that are different from one another. In some embodiments, the multiple types of dyes have steric configurations that are different relative to one another.

Abstract: A photoelectric conversion device having a laminated structure includes: an anodized substrate constituted by a metal substrate mainly containing aluminum and an anodized film formed on the metal substrate; a lower electrode mainly containing molybdenum; a semiconductor photoelectric conversion layer generating current when absorbing light; an upper electrode; a metal supply layer being formed in contact with or inside the lower electrode, containing an alkali and/or alkaline earth metal element, and supplying the alkali and/or alkaline earth metal element to the photoelectric conversion layer during formation of the photoelectric conversion layer; and a diffusion barrier layer being conductive and formed between the anodized substrate and the metal supply layer in contact with the lower electrode and/or the metal supply layer or inside the lower electrode, and suppressing diffusion, into the anodized substrate, of the alkali and/or alkaline earth metal element from the metal supply layer.

Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

Abstract: A photovoltaic device includes: a back electrode; a transparent front electrode; a p-type semiconductor layer disposed between the transparent front electrode and the back electrode and made from a first semiconductor compound including M1, M2, and A1, the p-type semiconductor layer having a M1/M2 atomic ratio; and an n-type layered structure disposed between the p-type semiconductor layer and the transparent front electrode and cooperating with the p-type semiconductor layer to form a p-n junction therebetween. The n-type layered structure includes an n-type semiconductor layer made from a second semiconductor compound including M3, M4, and A2 and having a M3/M4 atomic ratio less than the M1/M2 atomic ratio and greater than 0.1 and less than 0.9.

Abstract: One aspect of the present invention includes a photovoltaic device. The photovoltaic device includes a window layer disposed on a support and a doped absorber layer disposed on the window layer, wherein the doped absorber layer includes an absorber material and a first metal selected from the group consisting of manganese, cobalt, chromium, zinc, indium, tungsten, molybdenum, and combinations thereof. The photovoltaic devices further includes an interfacial layer disposed on the doped absorber layer, wherein the interfacial comprises a second metal selected from the group consisting of manganese, cobalt, nickel, zinc, and combinations thereof.

Abstract: A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

Abstract: Disclosed is a solar cell or component thereof that includes a p-type thin film solar light absorbing layer having one or more compositions of group II-VI alloys described as CdTexM1-x, where M is S, Se or O. An n-type thin-film transparent window layer comprising CdS is provided adjacent to the CdTexMi-x p-type thin film solar light absorbing layer such that a p-n junction formed between the layers.

Abstract: Disclosed are vacuum window glazing including a solar cell function and a manufacturing method thereof. The vacuum window glazing includes a first sheet glass, a second sheet glass that is vacuum-bonded to the first sheet glass; a vacuum layer that is formed between the first sheet glass and the second sheet glass; and a solar cell panel that is formed on a surface of the second sheet glass in a direction of the vacuum layer. By this configuration, power can be produced through the solar cell formed within the vacuum window glazing while more increasing the heat insulation effect of the vacuum window glazing, and the cooling and heating efficiency of the building can be greatly improved using the outer wall covered with glass.

Abstract: A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points ?600° C., thermal expansion coefficient of from 35 to 50×10?7/° C.

Abstract: The present invention provides a solar cell whose external color can be adjusted so that redness is suppressed. In the case where a photoelectric conversion layer contains amorphous silicon, an optical absorption layer is provided between the photoelectric conversion layer and a reflecting electrode layer. The optical absorption layer has a light absorbing property mainly in a long wavelength range, while the photoelectric conversion layer (amorphous silicon) has a selective light absorbing property mainly in a short/medium wavelength range. Incident light (solar light) passed through the photoelectric conversion layer further passes through the optical absorption layer and, after that, is reflected by the reflecting electrode layer. That is, remaining light of the incident light absorbed by the optical absorption layer and the photoelectric conversion layer is reflected by the reflecting electrode layer.

Abstract: The method and system for selenization in fabricating CIS and/or CIGS based thin film solar cell overlaying cylindrical glass substrates. The method includes providing a substrate, forming an electrode layer over the substrate and depositing a precursor layer of copper, indium, and/or gallium over the electrode layer. The method also includes disposing the substrate vertically in a furnace. Then a gas including a hydrogen species, a selenium species and a carrier gas are introduced into the furnace and heated to between about 350° C. and about 450° C. to at least initiate formation of a copper indium diselenide film from the precursor layer.