Abstract: After a workpiece unit has been delivered from a cassette and before the workpiece unit is delivered to a chuck table, a value of the thickness of the workpiece unit is recognized on the basis of a result of a measurement performed by a measuring unit. The value of the thickness of the workpiece unit is represented by the sum of values of respective thicknesses of a workpiece and a tape affixed thereto. On the basis of the result of the measurement performed by the measuring unit, it is possible to decide whether or not the tape affixed to the workpiece has a desired thickness, i.e., whether the tape is of a desired type or not. As a result, a workpiece with an inadequate tape affixed thereto is prevented from being ground.

Abstract: Discussed is a tandem solar cell manufacturing method including etching a crystalline silicon substrate, whereby a solar cell can be obtained which does not have a pyramid-shaped defect on a surface of the substrate, inhibits the generation of a shunt through the substrate having excellent surface roughness properties, and can secure fill factor properties, the solar cell being capable of being obtained through the tandem solar cell manufacturing method. The method includes preparing a crystalline silicon substrate; performing an isotropic etching process of the substrate; and removing a saw damage on a surface of the substrate by performing an anisotropic etching process of the isotropically etched substrate.

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank, a container, a measuring instrument, and a controller. The treatment tank stores a chemical solution to treat a substrate. The container contains a liquid including ammonia from which a gas discharged from the treatment tank is gas-liquid separated. The measuring instrument measures an amount of the ammonia included in the liquid over time. The controller controls the treatment of the substrate based on the amount of the ammonia.

Abstract: A system includes a controller to provide at least one control output to an automated system in response to a control command received at a control input of the controller. The control output controls the operation of the automated system based on the control command. A signature analyzer generates the control command to the controller and receives an impedance signature related to a property of a material or object encountered by the automated system. The signature analyzer compares the impedance signature to at least one comparison signature to determine the property of the material or object. The signature analyzer adjusts the control command to the controller to control the operation of the automated system based on the determined property.

Abstract: A system includes a controller to provide at least one control output to an automated system in response to a control command received at a control input of the controller. The control output controls the operation of the automated system based on the control command. A signature analyzer generates the control command to the controller and receives an impedance signature related to a property of a material or object encountered by the automated system. The signature analyzer compares the impedance signature to at least one comparison signature to determine the property of the material or object. The signature analyzer adjusts the control command to the controller to control the operation of the automated system based on the determined property.

Abstract: According to one embodiment, an etching amount measurement pattern is provided in a surface of a substrate. The pattern comprises a plurality of components two-dimensionally disposed and causing light incident on the pattern to be diffracted, A configuration of the component has 4-fold rotational symmetry. The plurality of components is arranged in a disposition having 4-fold rotational symmetry.

Abstract: This cleaning apparatus includes a rotation holding unit that holds and rotates an object; a cleaning fluid spray unit that sprays a cleaning fluid onto a spot-like cleaning region on the object, which is held by the rotation holding unit; a cleaning region moving unit that moves at least one of the rotation holding unit and the cleaning fluid spray unit to relatively move the cleaning region from the rotation center of the object toward the outer peripheral side thereof; a layered air current forming unit that forms a layered air current entering the surface of the object so as to cover the periphery of the cleaning region from a backward side in the direction of movement of the cleaning region relative to the rotation center; and a layered air current moving unit that relatively moves the incoming position of the layered air current while following the relative movement of the cleaning region.

Abstract: Approaches for substantially removing bulk aluminum nitride (AlN) from one or more layers epitaxially grown on the bulk AlN are discussed. The bulk AlN is exposed to an etchant during an etching process. During the etching process, the thickness of the bulk AlN can be measured and used to control etching.

Abstract: A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.

Abstract: There is provided a substrate warpage removal apparatus and method which can remove warpage of a substrate which has a patterned surface having a film with a pattern, and a non-patterned surface having a film without a pattern. The substrate warpage removal apparatus includes: a holding plate configured to hold a substrate; a processing liquid supply pipe, provided on the side of the non-patterned surface of the substrate, configured to supply an etching liquid to the surface to remove a surface film; and a first laser displacement meter and a second laser displacement meter configured to detect warpage of the substrate. When the controller, based on signals from the first laser displacement meter and the second laser displacement meter, determines that warpage of the substrate has been eliminated, the controller stops the supply of an etching liquid from the processing liquid supply pipe.

Abstract: A polishing system receives one or more target parameters for a selected peak in a spectrum of light, polishes a substrate, measures a current spectrum of light reflected from the substrate while the substrate is being polished, identifies the selected peak in the current spectrum, measures one or more current parameters of the selected peak in the current spectrum, compares the current parameters of the selected peak to the target parameters, and ceases to polish the substrate when the current parameters and the target parameters have a pre defined relationship.

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include flowing a process gas from a shared gas panel to a processing volume of the first process chamber and to a processing volume of the second process chamber; forming a first plasma in the first processing volume to process the first substrate and a second plasma to process the second substrate; monitoring the first processing volume and the second processing volume to determine if a process endpoint is reached in either volume; and either terminating the first and second plasma simultaneously when a first endpoint is reached; or terminating the first plasma when a first endpoint is reached in the first processing volume while continuing to provide the second plasma in the second processing volume until a second endpoint is reached.

Abstract: Disclosed is a metal etching method, a metal etching control method and a control device thereof. The metal etching control method is employed in a metal wet etching machine and comprises steps below: performing etching to a metal film and acquiring an etching end time of the metal film; multiplying the etching end time with a constant ratio to acquire the over etching time of the metal film; and performing etching to the metal film with the over etching time to complete the etching to the metal film. The present invention can precisely judge a total real etching time needed for each of a batch of metal films as performing metal etching to the metal films to reduce the issue of unstable etching qualities as the metal film thicknesses are not regular.

Abstract: There is provided a substrate warpage removal apparatus and method which can remove warpage of a substrate which has a patterned surface having a film with a pattern, and a non-patterned surface having a film without a pattern. The substrate warpage removal apparatus includes: a holding plate configured to hold a substrate; a processing liquid supply pipe, provided on the side of the non-patterned surface of the substrate, configured to supply an etching liquid to the surface to remove a surface film; and a first laser displacement meter and a second laser displacement meter configured to detect warpage of the substrate. When the controller, based on signals from the first laser displacement meter and the second laser displacement meter, determines that warpage of the substrate has been eliminated, the controller stops the supply of an etching liquid from the processing liquid supply pipe.

Abstract: A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical monitoring system, generating first and second sequences of values from the first and second sequences of measured spectra, fitting first and second linear functions to the first and second sequences of values, determining a difference between the first linear function and the second linear function, adjusting at least one parameter of the first set of parameters based on the difference, and polishing the second substrate on the first platen using the adjusted parameter.

Abstract: Disclosed is an end point detecting method of metal etching and a device thereof. The end point detecting method of metal etching comprises: performing scan to a metal film to acquire a proportion of a transparency area of the metal film in a scanned area; judging whether the proportion of the transparency area reaches a predetermined value or not; and confirming a current etching time of the metal film as an etching end point time when the predetermined value is reached. The device comprises an acquirement module, a judgment module and a confirmation module. The acquirement module performs scan to the metal film to acquire the proportion of the transparency area. The judgment module judges whether the proportion reaches the predetermined value or not. The confirmation module confirms the current etching time of the metal film as the etching end point time when the proportion reaches the predetermined value.

Abstract: Disclosed is a metal etching method, a metal etching control method and a control device thereof. The metal etching control method is employed in a metal wet etching machine and comprises steps below: performing etching to a metal film and acquiring an etching end time of the metal film; multiplying the etching end time with a constant ratio to acquire the over etching time of the metal film; and performing etching to the metal film with the over etching time to complete the etching to the metal film. The present invention can precisely judge a total real etching time needed for each of a batch of metal films as performing metal etching to the metal films to reduce the issue of unstable etching qualities as the metal film thicknesses are not regular.

Abstract: An exemplary apparatus for wet processing a substrate includes a conveyor configured for conveying the substrate along a conveying direction and parallel spray pipes. The spray pipes are substantially parallel with the conveyor and substantially perpendicular to the conveying direction. Each spray pipe consisting of at least one spray nozzle faces the conveyor, and the number of the at least one nozzle of each spray pipe increases along the conveying direction.

Abstract: A method for forming copper wirings in a semiconductor device may include depositing a lower insulating film over a semiconductor substrate; forming vias in the lower insulating film; depositing tungsten over the entire surface of upper portion of the lower insulating film so that the vias are gap-filled with the tungsten; forming tungsten plugs by performing a tungsten chemical mechanical polishing process to remove excess tungsten deposited over the upper portion of the lower insulating film; removing the tungsten remaining over the upper portion of the lower insulating film by performing a tungsten etchback process; depositing an upper insulating film over the upper portion of the lower insulating film; exposing upper portions of the tungsten plugs by forming trenches on the upper insulating film; depositing copper over the entire surface of the upper insulating film so that the trenches are gap-filled with the copper; and planarizing the copper over the upper portion of the trenches.

Abstract: An etching apparatus is provided for etching a substrate. The etching apparatus includes a first tank including a first etchant, and an etch bath connected to the first tank and receiving the first etchant, the etch bath containing a residual etchant including a diluted etchant and residue material after the substrate is etched with the first etchant. The etching apparatus further includes a second tank receiving the residual etchant from the etch bath and separating the diluted etchant from the residue material, a connecting passage connecting the first and second tanks for transferring the separated diluted etchant from the second tank to the first tank, and an outlet pipe attached to the second tank for discharging the residue material.

Abstract: Apparatus and systems provide a mechanism to examine physical properties and/or diagnose problems at a selected location of an integrated circuit. Such apparatus and systems can include a source of an energetic beam directed at the selected location. The apparatus and systems may be used to provide examination and/or diagnostic methods that may be used in areas smaller than one micron in diameter and that may be used to remove IC layers, either selectively or non-selectively, until a desired depth is obtained.

Abstract: A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.

Abstract: Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 ?m to about 10 ?m on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 ?m to about 8 ?m on the substrate.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: A wafer processing apparatus 100 is configured so that the number of repeated cycles of supplying pure water for maintaining the etching rate of phosphoric acid 10 to be high for the complete etching of the target film and halting the supply for each lot of wafers during a predetermined period of time, and, when the number of cycles falls outside a preset range of cycle counts, a notice to that effect is provided. Consequently, a lot of wafers having defective etching can be found with good accuracy, as well as defective etching being able to be prevented from occurring in subsequent lots of wafers.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness and other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various optical devices. The apparatus utilizes a bifurcated fiber optic cable to monitor changes on the surface of the thin film.

Abstract: A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table.

Abstract: An end point detection electrode system and an etch station including the electrode system are disclosed. In one embodiment, the electrode system includes: an insulative mount; a first Mu-metal electrode coupled to the insulative mount; and a second Mu-metal electrode coupled to the insulative mount, the second electrode surrounding the first electrode.

Abstract: The present invention is aimed to provide a measurement system installable within a processing equipment and more specifically within the exit station of a polishing machine. The optical scheme of this system includes a spectrophotometric channel, an imaging channel and also means for holding the wafer under measurement.

Abstract: A technique and apparatus is disclosed for the optical monitoring and measurement of a thin film (or small region on a surface) undergoing thickness or other changes while it is rotating. An optical signal is routed from the monitored area through the axis of rotation and decoupled from the monitored rotating area. The signal can then be analyzed to determine an endpoint to the planarization process. The invention utilizes interferometric and spectrophotometric optical measurement techniques for the in situ, real-time endpoint control of chemical-mechanical polishing planarization in the fabrication of semiconductor or various electrical devices.

Abstract: Improved endpoint detection is obtained for wet etch and/or other chemical processes involving in situ measurement of bath impedance. The endpoint detection uses a measurement apparatus having a measurement circuit with a capacitor designed to alter the phase angle of the circuit. The capacitor is preferably a variable capacitor which is used to set the initial phase angle of the measurement circuit to about zero. The methods using the improved detection enable etch to be more precisely controlled even under conditions where noise would otherwise adversely impact determination of the endpoint.

Abstract: There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor.

Abstract: A method and apparatus for providing a substantially constant environment in the cavity surrounding the optical pathway during the chemical mechanical planarization (CMP) operation is provided. In one embodiment, a system for planarizing the surface of a substrate is provided. The system includes a platen configured to rotate about its center axis. The platen supports an optical view-port assembly for assisting in determining a thickness of a layer of the substrate. A polishing pad disposed over the platen is included. The polishing pad has an aperture overlying a window of the optical view-port assembly. A carrier for holding the substrate over the polishing pad is also included. A cavity defined between the surface of the substrate and the window is included. A fluid delivery system adapted to provide a stable environment in the cavity during a chemical mechanical planarization (CMP) operation is included.

Abstract: An apparatus for measuring ammonia gas concentration in an ongoing chemical mechanical polishing (CMP) cycle utilizing an acidic CMP slurry, having the following components: a. A transferring means to collect a sample of the acidic CMP slurry; b. A converting means to convert the acidic CMP slurry to a basic slurry; c. A measuring means to measure the ammonia gas present in the basic slurry; d. A detection means to signal the end of an ongoing CMP cycle.

Abstract: A dual-port endpoint detection window for a process chamber for substrates. The dual-port endpoint detection window of the present invention comprises a primary port and a secondary port each of which may be individually removably fitted with a light sensor for the endpoint detection system. A cover is provided for removably covering the secondary port. After the window of the primary port has become covered with material deposition as a result of prolonged use of the process chamber, the secondary port is uncovered for use and the light sensor is attached to the secondary port for continued use of the endpoint detection system through the secondary port.

Abstract: Improved endpoint detection is obtained for wet etch and/or other chemical processes involving in situ measurement of bath impedance. The endpoint detection uses a measurement apparatus having a measurement circuit with a capacitor designed to alter the phase angle of the circuit. The capacitor is preferably a variable capacitor which is used to set the initial phase angle of the measurement circuit to about zero. The methods using the improved detection enable etch to be more precisely controlled even under conditions where noise would otherwise adversely impact determination of the endpoint.

Abstract: A system for processing a wafer is provided. The system includes a chemical mechanical planarization (CMP) tool. The CMP tool includes a wafer carrier defined within a housing. A carrier film is affixed to the bottom surface and supports a wafer. A sensor embedded in the wafer carrier. The sensor is configured to induce an eddy current in the wafer to determine a proximity and a thickness of the wafer. A sensor array external to the CMP tool is included. The sensor array is in communication with the sensor embedded in the wafer carrier and substantially eliminates a distance sensitivity. The sensor array provides an initial thickness of the wafer to allow for a calibration to be performed on the sensor embedded in the wafer carrier. The calibration offsets variables causing inaccuracies in the determination of the thickness of the wafer during CMP operation. A method and an apparatus are also provided.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the apparatus may include a species analyzer that receives a slurry resulting from the planarization process and analyzes the slurry to determine the presence of an endpointing material implanted beneath the surface of the microelectronic substrate. The species analyzer may include a mass spectrometer or a spectrum analyzer. In another embodiment, the apparatus may include a radiation source that directs impinging radiation toward the microelectronic substrate, exciting atoms of the substrate, which in turn produce an emitted radiation. A radiation detector is positioned proximate to the substrate to receive the emitted radiation and determine the endpoint by determining the intensity of the radiation emitted by the endpointing material.

Abstract: An optical system is disclosed for the inspection of wafers during polishing which also includes a measurement system for measuring the thickness of the wafers top layer. The optical system views the wafer through a window and includes a gripping system, which places the wafer in a predetermined viewing location while maintaining the patterned surface completely under water. The optical system also includes a pull-down unit for pulling the measurement system slightly below the horizontal prior to the measurement and returns the measuring system to the horizontal afterwards.

Abstract: Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time.

Abstract: Chemical mechanical polishing (CMP) a metal film (155) at the surface of a substrate (150), with mixing a slurry precursor (201) with an oxidizing agent (202) to provide a slurry (200) with a predetermined agent concentration, and supplying the slurry to a CMP pad (140) to polish the film at a predetermined polishing rate is modified by altering the agent concentration at the end of polishing. Since the polishing rate is reduced, endpointing is enhanced. The concentration is altered by adding further oxidizing or reducing agents.

Abstract: At each measurement time, reflected light from a semiconductor wafer W or the like by measurement light from a measurement light source 11 is coupled to reference light from a reference light generating section 14, and interference light is detected by a photodetector 15. A raw thickness value calculating section 16b selects two light intensity peaks corresponding to the upper and lower surfaces of the wafer W from a light intensity distribution between an interference light intensity and a reference optical path length and calculates a raw thickness value. A statistical thickness value calculating section 16c executes statistical processing including data sorting, determination whether the raw thickness value falls within an allowable numerical value range, and determination of a thickness change line, thereby obtaining a statistical thickness value.

Abstract: A method of reducing the thickness t of a layer of material on a substrate when the substrate is exposed to an etchant for a span of time sufficient to reduce t to a value to, at which point exposure to the etchant is interrupted, includes the thickness to being determined using monitoring means which, at any given instant, allow determination of the depth &Dgr;t of material which has been etched away. The method further includes the monitoring means being embodied as a resonant crystal whose resonant frequency f at any given instant is a function of the mass m of the crystal at that instant. The crystal is coated with a layer of reference material of thickness d, which material can be etched using the same etchant as for the material on the substrate. The crystal is exposed to the etchant simultaneously with the substrate, thus causing m to decrease as reference material is etched away, a decrease Am in m corresponding to a decrease &Dgr;d in d, in turn corresponding to a decrease &Dgr;t in t.

Abstract: A method and apparatus for endpointing a planarization process of a microelectronic substrate. In one embodiment, the apparatus may include a species analyzer that receives a slurry resulting from the planarization process and analyzes the slurry to determine the presence of an endpointing material implanted beneath the surface of the microelectronic substrate. The species analyzer may include a mass spectrometer or a spectrum analyzer. In another embodiment, the apparatus may include a radiation source that directs impinging radiation toward the microelectronic substrate, exciting atoms of the substrate, which in turn produce an emitted radiation. A radiation detector is positioned proximate to the substrate to receive the emitted radiation and determine the endpoint by determining the intensity of the radiation emitted by the endpointing material.

Abstract: Methods and apparatuses for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The measured drag force can be used to generate a plot of work versus time.