Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: An apparatus for processing a substrate includes a housing, a support unit that supports the substrate in the housing, a nozzle that dispenses a processing liquid onto the substrate, and a liquid supply unit that supplies the processing liquid to the nozzle. The liquid supply unit includes a container having a storage space in which the processing liquid is stored, a liquid supply tube through which the processing liquid flows from the container to the nozzle, and an ultrasonic-wave application member that applies ultrasonic waves to the processing liquid before the processing liquid is supplied to the nozzle. The ultrasonic-wave application member includes a liquid reservoir having an interior space in which a liquid is received and an ultrasonic generator that applies ultrasonic waves to the liquid received in the liquid reservoir. Part of the liquid supply tube is immersed in the liquid received in the liquid reservoir.

Abstract: In some embodiments, an ultrasonic tank includes a container, an etching solution tank comprising a working area disposed within the container, and a plurality of ultrasonic transducers arranged about a perimeter of the etching solution tank in a configuration that provides a standard deviation of ultrasonic power within the working area of less than about 0.35.

Abstract: A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.

Abstract: The invention relates to a tubing device for sterile media including a container for storing sterile media, a discharge port for discharging liquid sterile media, an inlet port for introducing fluid into the tubing device and a multiple-way-connector. The multiple-way-connector is connected to the container, the discharge port, the inlet port, and an apparatus for preparing, mixing and discharging a sterile medium for use with a tubing device, including a water inlet port for introducing water, a water outlet port configured to be connected to the inlet port of the tubing device, a fluid pump for conveying the fluid, the fluid pump is connected to the fluid inlet port and the water outlet port and a container support for supporting the container of the tubing device.

Abstract: A method for taping a wafer is disclosed. A wafer taping device comprising a wafer stage is provided. A wafer is mounted and secured on the wafer stage. A tape is delivered along a first direction over the wafer. The tape is forced into adhesion with a surface of the wafer in a non-contact manner. The tape is cut along a perimeter of the wafer.

Abstract: Disclosed is a substrate treating apparatus that treats a substrate with processing liquids. The apparatus includes a substrate holder, an exterior cup, and an interior cup. The interior cup includes an interior cup body, and an interior cup outlet. The exterior cup includes an exterior cup body, an exterior bottom cup, a first drain outlet, a first exhaust port, a second drain outlet, a second exhaust port, and a separation partition. The apparatus further includes an annular member movable upwardly/downwardly, and a drive unit that causes the annular member to move to shift the interior cup body between a collecting position and a retracting position.

Abstract: A composition including a carrier comprising a liquid, an abrasive particulate contained in the carrier, an accelerant contained in the carrier, the accelerant including at least one free anion selected from the group of iodide (I?), bromide (Br?), fluoride (F?), sulfate (SO42?), sulfide (S2?), sulfite (SO32?), chloride (Cl?), silicate (SiO44?), phosphate (PO43?), nitrate (NO3?), carbonate (CO32?), perchlorate (ClO4?), or any combination thereof, and a buffer contained in a saturated concentration in the carrier, the buffer including a compound selected from MaFx, NbFx, MaNbFx, MaIx, NbIx, MaNbIx, MaBrx, NbBrx, MaNbBrx, Ma(SO4)x, Nb(SO4)x, MaNb(SO4)x, MaSx, NbSx, MaNbSx, Ma(SiO4)x, Nb(SiO4)x, MaNb(SiO4)x, Ma(PO4)x, Nb(PO4)x, MaNb(PO4)x, Ma(NO3)x, Nb(NO3)x, MaNb(NO3)x, Ma(CO3)x, Nb(CO3)x, MaNb(CO3)x, or any combination, wherein M represents a metal element or metal compound; N represents a non-metal element; and a, b, and x is 1-6.

Abstract: A substrate processing method includes a first gas discharge step of discharging, from a first discharge port, a first gas containing a vapor of a low surface tension liquid having a lower surface tension than a processing liquid and spraying, to a liquid film of the processing liquid, the first gas from a direction intersecting the upper surface such that a liquid film removal region where the liquid film is removed from the liquid film of the processing liquid is formed, a second gas discharge step of discharging a second gas containing a vapor of a low surface tension liquid having a lower surface tension than the processing liquid from an annular second discharge port different from the first discharge port laterally and radially and a liquid film removal region enlargement step of enlarging the liquid film removal region.

Abstract: According to an exemplary embodiment of the present invention, there are provided an organic treatment solution for patterning chemically amplified resist films, an organic treatment solution containing 1 ppm or less of an alkyl olefin having a carbon number of 22 or less and having a metal element concentration of 5 ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn, a pattern formation method, an electronic device manufacturing method, and an electronic device use the same.

Abstract: A substrate processing apparatus includes a guard that catches liquid scattered outward from a spin chuck, a cup defining a liquid receiving groove to catch liquid that is guided downward by the guard, a guard elevating/lowering unit that moves the guard in an up/down direction, a cleaning liquid supplying unit that supplies cleaning liquid, discharged from a cleaning liquid nozzle, to the liquid receiving groove via the spin chuck and the guard, a cleaning liquid draining unit that drains the cleaning liquid in the liquid receiving groove, and a controller that controls the cleaning liquid supplying unit and the cleaning liquid draining unit to accumulate cleaning liquid in the liquid receiving groove and controls the guard elevating/lowering unit to cause a lower end portion of the cylindrical portion to be immersed in the cleaning liquid in the liquid receiving groove.

Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Abstract: A columnar laminar flow generation device includes: a placement part on which to place a processing target; a gas blow-out part having an opening; and a gas suction path; wherein the placement part is positioned in a space whose outer periphery surface is constituted by extending the interior wall of the opening in the direction vertical to the opening; the opening has, in its interior wall, a gas blow-out port through which a gas is blown out in one direction vertical to the opening; and the gas suction path is formed in such a way that it suctions the gas in the direction opposite to the one in which the gas is blown out. The columnar laminar generation device is capable of generating columnar laminar flows.

Abstract: A substrate processing system includes: a holding plate provided to be rotatable around a vertical axis; a substrate holding member provided on the holding plate to hold a substrate; a rotary drive unit that rotates the substrate in a predetermined direction; and a processing fluid supply unit that supplies a processing liquid to the substrate. The substrate holding member includes a first side portion provided at a position facing the substrate and a second side portion and a third side portion that are adjacent to the first side portion. The first side portion includes a gripping portion configured to grip an end surface of the substrate. The second side portion forms a pointed end portion with the first side portion, and includes a liquid flow guide portion that guides the processing liquid to a lower side of the substrate after the processing liquid is supplied to the substrate.

Abstract: A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

Abstract: The present disclosure provides one embodiment of an etch system. The etch system includes a tank designed to hold an etch solution for etching; a silicon monitor configured to measure silicon concentration of the etch solution; a drain module coupled to the tank and being operable to drain the etch solution; and a supply module being operable to fill in the tank with a fresh etch solution.

Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.

Abstract: An apparatus for fabricating microcontainers, the apparatus comprising: a mixer configured to contain a liquid and having a plurality of zones, the plurality of zones comprising: a reaction zone configured to contain a solution of an etching agent and a plurality of hollow glass beads for etching of the hollow glass beads therein; a sinking zone below and in fluid connection with the reaction zone and configured to allow separation of etched hollow glass beads from intact hollow glass beads therein by sinking of the etched hollow glass beads; and a collection zone below and in fluid connection with the sinking zone and configured to collect the etched hollow glass beads therein while minimizing over-etching in the collection zone.

Abstract: A substrate liquid processing apparatus of the present invention includes a process-liquid supply unit selectively supplying a plurality of types of process-liquids to the substrate held by a substrate holding table, first and second guide cups which are disposed in this order from the top and are configured to respectively guide downward the process-liquid scattering from the rotating substrate while being held by the substrate holding table; and a position adjustment mechanism adjusting a positional relationship between the first and second guide cups and the substrate holding table. A first process-liquid recovery tank is provided at a lower area of the first and second guide cups and recovers the process-liquid guided by the first guide cup. A second process-liquid recovery tank is provided at the inner peripheral side of the first process-liquid recovery tank and recovers the process-liquid guided by the second guide cup.

Abstract: A filtration system, mechanism and method is proved that continuously filters waste fluid from variable data ink-based printing system cleaning subsystems. Waste fluid from a cleaning subsystem is forced through a bank of progressively finer filter media. Initial coarse filters remove large components of the ink and/or skin that would rapidly clog the later finer filters required to remove small components of the ink and/or skin. The filtered fluid is recycled for printing surface cleaning and filtration. To avoid clogging, the filter media are cleaned by reversing the flow of fluid through the filters. This back-flushing operation is accomplished with a relatively small volume of fluid that is routed as concentrated waste fluid to a waste container for disposal. To avoid disruption to the printing process, two or more filter banks are preferably used. While one filter bank is filtering the waste fluid any other bank(s) may be back-flushed.

Abstract: A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.

Abstract: A substrate liquid processing apparatus is provided, in which a processing solution and an atmosphere can be separated from each other within a collection cup. The substrate liquid processing apparatus includes: a substrate rotation unit; a processing solution supply unit; a collection cup configured to collect the processing solutions; liquid collection regions formed at the collection cup; a liquid drain opening formed at a bottom portion of the collection cup; an exhaust opening formed above the liquid drain opening; a fixed cover configured to cover an upper portion of the exhaust opening with a space therebetween; an elevating cup provided above the fixed cover and configured to guide the processing solutions into the liquid collection regions; and a cup elevating unit configured to move up and down the elevating cup depending on the kinds of the processing solutions.

Abstract: Disclosed is a liquid processing apparatus capable of performing a liquid processing and a drying processing in a position each having a different height. The liquid processing apparatus includes: a substrate holding unit configured to hold a substrate; a rotation driving unit configured to rotate the substrate holding unit; a substrate holding unit elevating member configured to lift and lower the substrate holding unit; a processing liquid supply unit configured to supply a processing liquid to the substrate; a liquid receiving cup configured to surround the substrate when the processing liquid is being supplied to the substrate; a drying cup located above the substrate and the liquid receiving cup when the processing liquid is being supplied to the substrate. The drying cup surrounds the substrate and located above the liquid receiving cup when the substrate is being dried.

Abstract: An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.

Abstract: Disclosed are a liquid processing device, and a liquid processing method. The liquid processing method includes a first process that includes supplying a first processing liquid to the substrate and discharging the first processing liquid within the processing space from a first discharge path, a second process that includes supplying a second processing liquid to the substrate and discharging the second processing liquid within the processing space from the second discharge path, and after stop supplying of the first processing liquid and prior to beginning of the second process, a nozzle switching operation switching from the first nozzle to the second nozzle and a discharge mechanism switching operation switching from the first discharge path to the second discharge path are performed.

Abstract: An etchant is supplied to a workpiece. Furthermore, the workpiece is irradiated with spatially modulated light to adjust a temperature profile of said workpiece while etchant is supplied.

Abstract: The substrate treatment apparatus according to the present invention includes a substrate holding mechanism which holds a substrate, a nozzle body having a spout which spouts an etching liquid toward a major surface of the substrate held by the substrate holding mechanism, a nozzle body movement mechanism which moves the nozzle body in a predetermined movement direction so as to move an etching liquid application position at which the etching liquid is applied on the major surface, a first flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on one of opposite sides of the etching liquid application position with respect to the movement direction, and a second flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on the other side of the etching liquid application position with respect to the movement direction.

Abstract: Disclosed is a liquid processing apparatus capable of accurately determining a holding state of a substrate without being influenced by, for example, material or surface condition of a substrate. The liquid processing apparatus includes a substrate holding unit that holds a substrate, a camera that photographs a region where a peripheral edge portion of substrate is present when substrate is properly held by the substrate holding unit, and a control unit that determines a holding state of the substrate held by the substrate holding unit based on an image photographed by the camera.

Abstract: A magnetic field-guided method of metal-assisted chemical etching comprises immersing a structure that comprises a two-dimensional magnetic pattern layer on a surface thereof in an etchant solution. The magnetic pattern layer sinks into the structure as portions of the structure directly under the magnetic pattern layer are etched. A programmable magnetic field H(t) is applied to the structure during etching to guide the sinking of the magnetic pattern layer, thereby controlling the etching of the structure in three dimensions.

Abstract: Embodiments involve patterned mask formation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; exposing the CVD film to e-beam or UV radiation, forming a pattern in the CVD film; and etching the pattern in the CVD film, forming features in areas not exposed to the e-beam or UV radiation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; depositing a thin photo-sensitive CVD hardmask film over the CVD film; exposing the thin photo-sensitive CVD hardmask film to e-beam or UV radiation, forming a pattern in the thin photo-sensitive CVD hardmask film; etching the pattern in the thin photo-sensitive CVD hardmask film; etching the pattern into the CVD film through the patterned thin photo-sensitive CVD hardmask film; and removing the patterned thin photo-sensitive CVD hardmask film.

Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.

Abstract: In a chemical liquid container replacement device D2 configured to replace a chemical liquid container 50, multiple chemical liquid containers 50 respectively connected to base end sides of chemical liquid supply paths configured to supply chemical liquids, and a nozzle attachment/detachment device 61 is configured to attach/detach the base end side of the chemical liquid supply path with respect to the chemical liquid container 50 of a container arrangement section 60. A loading/unloading port 62 loads a new chemical liquid container 50 for performing a liquid process on a substrate W and unloads a completely used chemical liquid container 50. A container transfer device 7 unloads the completely used chemical liquid container 50 from the container arrangement section 60 toward the loading/unloading port 62 and loads the new chemical liquid containers 50 from the loading/unloading port 62 toward the container arrangement section 60.

Abstract: Systems and methods for etching the surface of a substrate may utilize a thin layer of fluid to etch a substrate for improved anti-reflective properties. The substrate may be secured with a holding fixture that is capable of positioning the substrate. A fluid comprising an acid and an oxidizer for etching may be prepared, which may optionally include a metal catalyst. An amount of fluid necessary to form a thin layer contacting the surface of the substrate to be etched may be dispensed. The fluid may be spread into the thin layer utilizing a tray that the substrate is dipped into, a plate that is placed near the surface of the substrate to be etched, or a spray or coating device.

Abstract: In a spin-chuck with plural collector levels, a separate exhaust controller is provided for each level. This permits selectively varying gas flow conditions among the collector levels, so that the ambient pressure at one level does not adversely affect device performance in an adjacent level.

Abstract: A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or the at least one aperture. The fluid may be pressurized by generating a pressure differential across the substrate, which causes the fluid to flow into or through the at least one aperture or recess. Apparatus for pressurizing fluid so as to cause it to flow into or through recesses or apertures in a substrate are also disclosed.

Abstract: An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.

Abstract: An improved design for a closed chamber process module for single wafer wet processing utilizes a combination lid and gas showerhead for sealing the chamber from above. One or more media arms dispense liquid onto a wafer in the chamber. The media arms are mounted inside the chamber but are connected by a linkage that passes through the chamber wall to a drive unit mounted outside the chamber.

Abstract: A proximity head defined by a body having a length. The body includes a main bore defined therein and extending along the length. A resistor bore is defined in the body and extends along the length. The resistor bore defined below the main bore. A first plurality of bores defined between the main bore and the resistor bore and a second plurality of bores defined between the resistor bore and an exterior surface of the body. The exterior surface of the body defining a proximity surface of the proximity head.

Abstract: A process for etching the surfaces of semiconductor substrates utilizes a texturing tank which introduces a process fluid through a circulating system. The process fluid is heated to a desired temperature and maintained at a desired concentration prior to entering a processing area where laminar flow is produced to more quickly and uniformly roughen the surface of semiconductor substrates. The texturing tank permits removal of bubbles and eliminates temperature stratification in the processing area.

Abstract: A three-dimensional object fabrication method and apparatus to fabricate a three-dimensional object from a foamed material are provided. The method includes applying a solvent to dissolve the foamed material; dissolving and contracting the foamed material; and molding a three-dimensional object. The solvent is applied to a surface of the foamed material, thereby dissolving and contracting of the foamed material in a depth direction, or otherwise, the solvent is applied to an interior portion of the foamed material, thereby releasing air contained inside the foamed material and starting contraction of the foamed material itself. The method further includes adjusting an amount of the solvent depending on a thickness of the three-dimensional object, filling in a recess or a concavity formed in the foamed material with a molding material; solidifying the molding material as a mold; and transferring a shape of the recess or the concavity to the molding material.

Abstract: A device of manufacturing a cascade thin film solar cell with improved productivity, and a thin film solar cell manufactured using the device have been disclosed. The thin film solar cell having a buffer layer formed by a method using the device has improved electrical characteristics.

Abstract: An etchant is stored in a treating tank; a glass substrate is transported with transport rollers into the treating tank; the etchant is discharged from below the substrate to raise the substrate to a position above the transport rollers and below the surface of the etchant; the discharge of the etching liquid is stopped and the glass substrate is lowered to a position for contacting the transport rollers; the etchant is drained from the treating tank; and the glass substrate is unloaded with the transport rollers out of the treating tank. The disclosed method and apparatus can treat both front and back surfaces of the substrate uniformly.

Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.

Abstract: A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit.

Abstract: A wet processing apparatus and method that takes advantage of a fluid meniscus to process at least a portion of a surface of an object. After one surface of the object has been processed another side or surface of the object can be similarly processed. This processing can be coating, etching, plating, to name a few. An application of the apparatus and method is in the semiconductor processing industry, especially, the processing of wafers and substrates. The method and apparatus also allows the processing of multiple surfaces of an electronic component.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: An open-bottomed reactor cell for wet processing of substrates can be configured to confine a process liquid to an area under the cell (processing the “internal site”), or alternatively to exclude the process liquid from most of the area under the cell (processing the “external site”) without physical contact between the cell and substrate. A slight underpressure or overpressure maintained inside the main cavity of the cell causes the liquid to form a meniscus in the narrow gap between the cell and substrate rather than flowing outside the desired process area. An area under a peripheral channel outside the main cavity of the cell is shared by both the internal site and the external side, allowing the entire substrate to be processed.

Abstract: Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.

Abstract: Embodiments provided herein describe systems and methods for processing substrates. A substrate having a plurality of site-isolated regions defined thereon is provided. A plurality of wet processes is simultaneously performed. Each of the plurality of wet processes is performed on one of the plurality of site-isolated regions defined on the substrate. The simultaneously performing includes exposing each of the plurality of site-isolated regions to one of a plurality of wet processing formulations. Each of the plurality of wet processing formulations includes a component. The respective component is added to at least some of the plurality of wet processing formulations during the exposing. A processing condition is varied between at least two of the plurality of wet processes in a combinatorial manner.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.