For Liquid Etchant Patents (Class 156/345.11)
  • Patent number: 10658203
    Abstract: A substrate processing apparatus includes a guard that catches liquid scattered outward from a spin chuck, a cup defining a liquid receiving groove to catch liquid that is guided downward by the guard, a guard elevating/lowering unit that moves the guard in an up/down direction, a cleaning liquid supplying unit that supplies cleaning liquid, discharged from a cleaning liquid nozzle, to the liquid receiving groove via the spin chuck and the guard, a cleaning liquid draining unit that drains the cleaning liquid in the liquid receiving groove, and a controller that controls the cleaning liquid supplying unit and the cleaning liquid draining unit to accumulate cleaning liquid in the liquid receiving groove and controls the guard elevating/lowering unit to cause a lower end portion of the cylindrical portion to be immersed in the cleaning liquid in the liquid receiving groove.
    Type: Grant
    Filed: July 13, 2017
    Date of Patent: May 19, 2020
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Hiroki Tsujikawa, Masahide Ikeda, Atsuyasu Miura, Kazuhiro Fujita, Yuya Tsuchihashi
  • Patent number: 10486285
    Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.
    Type: Grant
    Filed: May 22, 2017
    Date of Patent: November 26, 2019
    Assignee: EBARA Corporation
    Inventors: Mitsuru Miyazaki, Seiji Katsuoka, Naoki Matsuda, Junji Kunisawa, Kenichi Kobayashi, Hiroshi Sotozaki, Hiroyuki Shinozaki, Osamu Nabeya, Shinya Morisawa, Takahiro Ogawa, Natsuki Makino
  • Patent number: 10286426
    Abstract: A columnar laminar flow generation device includes: a placement part on which to place a processing target; a gas blow-out part having an opening; and a gas suction path; wherein the placement part is positioned in a space whose outer periphery surface is constituted by extending the interior wall of the opening in the direction vertical to the opening; the opening has, in its interior wall, a gas blow-out port through which a gas is blown out in one direction vertical to the opening; and the gas suction path is formed in such a way that it suctions the gas in the direction opposite to the one in which the gas is blown out. The columnar laminar generation device is capable of generating columnar laminar flows.
    Type: Grant
    Filed: September 9, 2016
    Date of Patent: May 14, 2019
    Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, LITHO TECH JAPAN CORPORATION, ORIENTAL MOTOR CO., LTD.
    Inventors: Shuuji Okuda, Sommawan Khumpuang, Shiro Hara, Sho Takeuchi, Yoshihisa Sensu, Takahiro Ito
  • Patent number: 10276425
    Abstract: A substrate processing system includes: a holding plate provided to be rotatable around a vertical axis; a substrate holding member provided on the holding plate to hold a substrate; a rotary drive unit that rotates the substrate in a predetermined direction; and a processing fluid supply unit that supplies a processing liquid to the substrate. The substrate holding member includes a first side portion provided at a position facing the substrate and a second side portion and a third side portion that are adjacent to the first side portion. The first side portion includes a gripping portion configured to grip an end surface of the substrate. The second side portion forms a pointed end portion with the first side portion, and includes a liquid flow guide portion that guides the processing liquid to a lower side of the substrate after the processing liquid is supplied to the substrate.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: April 30, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Terufumi Wakiyama, Norihiro Ito, Jiro Higashijima, Satoshi Biwa
  • Patent number: 10008419
    Abstract: A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: June 26, 2018
    Assignees: Tokyo Electron Limited, INTEL CORPORATION
    Inventors: Shinji Okada, Masatoshi Shiraishi, Masatoshi Deguchi, Xavier Francois Brun, Charles Wayne Singleton, Jr., Kabirkumar Mirpuri
  • Patent number: 9887095
    Abstract: The present disclosure provides one embodiment of an etch system. The etch system includes a tank designed to hold an etch solution for etching; a silicon monitor configured to measure silicon concentration of the etch solution; a drain module coupled to the tank and being operable to drain the etch solution; and a supply module being operable to fill in the tank with a fresh etch solution.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: February 6, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fu Yi Chang, Yih-Song Chiu, Shao-Yen Ku
  • Patent number: 9818904
    Abstract: In a processing of immersing substrates in a chemical solution, and agitating the chemical solution by as bubbles or liquid, the gas bubbles or liquid is supplied so as to bring about alternate occurrence of a first state and a second state. The first state is a state in which an amount of the gas bubbles or the liquid supplied to first side in one direction of each substrate is greater than an amount of the gas bubbles or the liquid supplied to a second side in the one direction of the substrate. The second state is a state in which the amount of the gas bubbles or the liquid supplied to the first side in the one direction of the substrate is smaller than the amount of the gas bubbles or the liquid supplied to the second side in the one direction of the substrate.
    Type: Grant
    Filed: January 7, 2015
    Date of Patent: November 14, 2017
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Masaki Shima, Shinji Kobayashi
  • Patent number: 9522843
    Abstract: An apparatus for fabricating microcontainers, the apparatus comprising: a mixer configured to contain a liquid and having a plurality of zones, the plurality of zones comprising: a reaction zone configured to contain a solution of an etching agent and a plurality of hollow glass beads for etching of the hollow glass beads therein; a sinking zone below and in fluid connection with the reaction zone and configured to allow separation of etched hollow glass beads from intact hollow glass beads therein by sinking of the etched hollow glass beads; and a collection zone below and in fluid connection with the sinking zone and configured to collect the etched hollow glass beads therein while minimizing over-etching in the collection zone.
    Type: Grant
    Filed: December 17, 2013
    Date of Patent: December 20, 2016
    Assignee: NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Jinglei Yang, He Zhang
  • Patent number: 9484230
    Abstract: A substrate liquid processing apparatus of the present invention includes a process-liquid supply unit selectively supplying a plurality of types of process-liquids to the substrate held by a substrate holding table, first and second guide cups which are disposed in this order from the top and are configured to respectively guide downward the process-liquid scattering from the rotating substrate while being held by the substrate holding table; and a position adjustment mechanism adjusting a positional relationship between the first and second guide cups and the substrate holding table. A first process-liquid recovery tank is provided at a lower area of the first and second guide cups and recovers the process-liquid guided by the first guide cup. A second process-liquid recovery tank is provided at the inner peripheral side of the first process-liquid recovery tank and recovers the process-liquid guided by the second guide cup.
    Type: Grant
    Filed: June 2, 2011
    Date of Patent: November 1, 2016
    Assignee: Tokyo Electron Limited
    Inventors: Nobuhiro Ogata, Shuichi Nagamine
  • Patent number: 9365063
    Abstract: A filtration system, mechanism and method is proved that continuously filters waste fluid from variable data ink-based printing system cleaning subsystems. Waste fluid from a cleaning subsystem is forced through a bank of progressively finer filter media. Initial coarse filters remove large components of the ink and/or skin that would rapidly clog the later finer filters required to remove small components of the ink and/or skin. The filtered fluid is recycled for printing surface cleaning and filtration. To avoid clogging, the filter media are cleaned by reversing the flow of fluid through the filters. This back-flushing operation is accomplished with a relatively small volume of fluid that is routed as concentrated waste fluid to a waste container for disposal. To avoid disruption to the printing process, two or more filter banks are preferably used. While one filter bank is filtering the waste fluid any other bank(s) may be back-flushed.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: June 14, 2016
    Assignee: Xerox Corporation
    Inventor: Bruce E. Thayer
  • Patent number: 9362147
    Abstract: A substrate treatment method employs a substrate holding unit, a gas ejection nozzle, and a gas supply unit. The substrate holding unit is configured to hold a substrate. The gas supply unit is configured to supply a gas to the gas ejection nozzle. The gas ejection nozzle is disposed to be positioned adjacent a center portion of the substrate held by the substrate holding unit. The gas ejection nozzle has a gas ejection port. The gas ejection nozzle is configured to eject the gas radially from the gas ejection port over the substrate held by the substrate holding unit to form a gas-flow for covering the substrate.
    Type: Grant
    Filed: March 21, 2012
    Date of Patent: June 7, 2016
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Takashi Izuta, Hiroaki Ishii, Asuka Yoshizumi
  • Patent number: 9355871
    Abstract: A substrate liquid processing apparatus is provided, in which a processing solution and an atmosphere can be separated from each other within a collection cup. The substrate liquid processing apparatus includes: a substrate rotation unit; a processing solution supply unit; a collection cup configured to collect the processing solutions; liquid collection regions formed at the collection cup; a liquid drain opening formed at a bottom portion of the collection cup; an exhaust opening formed above the liquid drain opening; a fixed cover configured to cover an upper portion of the exhaust opening with a space therebetween; an elevating cup provided above the fixed cover and configured to guide the processing solutions into the liquid collection regions; and a cup elevating unit configured to move up and down the elevating cup depending on the kinds of the processing solutions.
    Type: Grant
    Filed: July 5, 2012
    Date of Patent: May 31, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jiro Higashijima, Norihiro Ito, Nobuhiro Ogata, Shuichi Nagamine
  • Patent number: 9346084
    Abstract: Disclosed is a liquid processing apparatus capable of performing a liquid processing and a drying processing in a position each having a different height. The liquid processing apparatus includes: a substrate holding unit configured to hold a substrate; a rotation driving unit configured to rotate the substrate holding unit; a substrate holding unit elevating member configured to lift and lower the substrate holding unit; a processing liquid supply unit configured to supply a processing liquid to the substrate; a liquid receiving cup configured to surround the substrate when the processing liquid is being supplied to the substrate; a drying cup located above the substrate and the liquid receiving cup when the processing liquid is being supplied to the substrate. The drying cup surrounds the substrate and located above the liquid receiving cup when the substrate is being dried.
    Type: Grant
    Filed: November 19, 2012
    Date of Patent: May 24, 2016
    Assignee: Tokyo Electron Limited
    Inventors: Shuichi Nagamine, Yusuke Hashimoto
  • Patent number: 9281220
    Abstract: Disclosed are a liquid processing device, and a liquid processing method. The liquid processing method includes a first process that includes supplying a first processing liquid to the substrate and discharging the first processing liquid within the processing space from a first discharge path, a second process that includes supplying a second processing liquid to the substrate and discharging the second processing liquid within the processing space from the second discharge path, and after stop supplying of the first processing liquid and prior to beginning of the second process, a nozzle switching operation switching from the first nozzle to the second nozzle and a discharge mechanism switching operation switching from the first discharge path to the second discharge path are performed.
    Type: Grant
    Filed: October 11, 2012
    Date of Patent: March 8, 2016
    Assignee: Tokyo Electron Limited
    Inventor: Yuuji Takimoto
  • Patent number: 9281177
    Abstract: An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plate during cleaning process.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: March 8, 2016
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Hui Wang, Jian Wang, Yue Ma, Chuan He
  • Patent number: 9145332
    Abstract: An etchant is supplied to a workpiece. Furthermore, the workpiece is irradiated with spatially modulated light to adjust a temperature profile of said workpiece while etchant is supplied.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: September 29, 2015
    Assignee: Infineon Technologies AG
    Inventor: Karl Pilch
  • Patent number: 9099504
    Abstract: The substrate treatment apparatus according to the present invention includes a substrate holding mechanism which holds a substrate, a nozzle body having a spout which spouts an etching liquid toward a major surface of the substrate held by the substrate holding mechanism, a nozzle body movement mechanism which moves the nozzle body in a predetermined movement direction so as to move an etching liquid application position at which the etching liquid is applied on the major surface, a first flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on one of opposite sides of the etching liquid application position with respect to the movement direction, and a second flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on the other side of the etching liquid application position with respect to the movement direction.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: August 4, 2015
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Kazunari Nada, Kenichiro Arai
  • Patent number: 9039863
    Abstract: Disclosed is a liquid processing apparatus capable of accurately determining a holding state of a substrate without being influenced by, for example, material or surface condition of a substrate. The liquid processing apparatus includes a substrate holding unit that holds a substrate, a camera that photographs a region where a peripheral edge portion of substrate is present when substrate is properly held by the substrate holding unit, and a control unit that determines a holding state of the substrate held by the substrate holding unit based on an image photographed by the camera.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: May 26, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Shuhei Matsumoto, Shuji Iwanaga, Hiroshi Tomita, Kenji Nakamizo, Satoshi Morita
  • Publication number: 20150137321
    Abstract: A magnetic field-guided method of metal-assisted chemical etching comprises immersing a structure that comprises a two-dimensional magnetic pattern layer on a surface thereof in an etchant solution. The magnetic pattern layer sinks into the structure as portions of the structure directly under the magnetic pattern layer are etched. A programmable magnetic field H(t) is applied to the structure during etching to guide the sinking of the magnetic pattern layer, thereby controlling the etching of the structure in three dimensions.
    Type: Application
    Filed: November 14, 2014
    Publication date: May 21, 2015
    Inventors: Xiuling Li, Weidong Zhou, Wen Huang
  • Publication number: 20150132959
    Abstract: Embodiments involve patterned mask formation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; exposing the CVD film to e-beam or UV radiation, forming a pattern in the CVD film; and etching the pattern in the CVD film, forming features in areas not exposed to the e-beam or UV radiation. In one embodiment, a method involves depositing a CVD film over a semiconductor wafer; depositing a thin photo-sensitive CVD hardmask film over the CVD film; exposing the thin photo-sensitive CVD hardmask film to e-beam or UV radiation, forming a pattern in the thin photo-sensitive CVD hardmask film; etching the pattern in the thin photo-sensitive CVD hardmask film; etching the pattern into the CVD film through the patterned thin photo-sensitive CVD hardmask film; and removing the patterned thin photo-sensitive CVD hardmask film.
    Type: Application
    Filed: November 8, 2013
    Publication date: May 14, 2015
    Inventors: Leonard TEDESCHI, Srinivas NEMANI
  • Publication number: 20150111311
    Abstract: A method of selectively removing silicon nitride is provided. The method includes: providing a wafer having silicon nitride on a surface of the wafer; supplying a mixture of phosphoric acid and a silicon-containing material into a process tank, in which the mixture has a predetermined silicon concentration; and submerging the wafer into the mixture within the process tank to remove the silicon nitride. An etching apparatus of selectively removing silicon nitride is also provided.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 23, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ying-Hsueh CHANGCHIEN, Yu-Ming Lee, Chi-Ming Yang
  • Publication number: 20150096682
    Abstract: In a chemical liquid container replacement device D2 configured to replace a chemical liquid container 50, multiple chemical liquid containers 50 respectively connected to base end sides of chemical liquid supply paths configured to supply chemical liquids, and a nozzle attachment/detachment device 61 is configured to attach/detach the base end side of the chemical liquid supply path with respect to the chemical liquid container 50 of a container arrangement section 60. A loading/unloading port 62 loads a new chemical liquid container 50 for performing a liquid process on a substrate W and unloads a completely used chemical liquid container 50. A container transfer device 7 unloads the completely used chemical liquid container 50 from the container arrangement section 60 toward the loading/unloading port 62 and loads the new chemical liquid containers 50 from the loading/unloading port 62 toward the container arrangement section 60.
    Type: Application
    Filed: October 7, 2014
    Publication date: April 9, 2015
    Inventor: Tsunenaga Nakashima
  • Publication number: 20150056818
    Abstract: Systems and methods for etching the surface of a substrate may utilize a thin layer of fluid to etch a substrate for improved anti-reflective properties. The substrate may be secured with a holding fixture that is capable of positioning the substrate. A fluid comprising an acid and an oxidizer for etching may be prepared, which may optionally include a metal catalyst. An amount of fluid necessary to form a thin layer contacting the surface of the substrate to be etched may be dispensed. The fluid may be spread into the thin layer utilizing a tray that the substrate is dipped into, a plate that is placed near the surface of the substrate to be etched, or a spray or coating device.
    Type: Application
    Filed: August 25, 2014
    Publication date: February 26, 2015
    Applicant: Natcore Technology, Inc.
    Inventors: David Howard Levy, Theodore Zubil, Richard W. Topel, JR., Wendy G. Ahearn
  • Patent number: 8956498
    Abstract: A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or the at least one aperture. The fluid may be pressurized by generating a pressure differential across the substrate, which causes the fluid to flow into or through the at least one aperture or recess. Apparatus for pressurizing fluid so as to cause it to flow into or through recesses or apertures in a substrate are also disclosed.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: February 17, 2015
    Assignee: Micron Technology, Inc.
    Inventor: Ross S. Dando
  • Patent number: 8955529
    Abstract: In a spin-chuck with plural collector levels, a separate exhaust controller is provided for each level. This permits selectively varying gas flow conditions among the collector levels, so that the ambient pressure at one level does not adversely affect device performance in an adjacent level.
    Type: Grant
    Filed: January 4, 2010
    Date of Patent: February 17, 2015
    Assignee: Lam Research AG
    Inventor: Karl-Heinz Hohenwarter
  • Publication number: 20150034245
    Abstract: An inventive substrate treatment method includes a silylation step of supplying a silylation agent to a substrate, and an etching step of supplying an etching agent to the substrate after the silylation step. The method may further include a repeating step of repeating a sequence cycle including the silylation step and the etching step a plurality of times. The cycle may further include a rinsing step of supplying a rinse liquid to the substrate after the etching step. The cycle may further include a UV irradiation step of irradiating the substrate with ultraviolet radiation after the etching step. The method may further include a pre-silylation or post-silylation UV irradiation step of irradiating the substrate with the ultraviolet radiation before or after the silylation step.
    Type: Application
    Filed: October 16, 2014
    Publication date: February 5, 2015
    Inventor: Akio HASHIZUME
  • Patent number: 8926788
    Abstract: An improved design for a closed chamber process module for single wafer wet processing utilizes a combination lid and gas showerhead for sealing the chamber from above. One or more media arms dispense liquid onto a wafer in the chamber. The media arms are mounted inside the chamber but are connected by a linkage that passes through the chamber wall to a drive unit mounted outside the chamber.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: January 6, 2015
    Assignee: Lam Research AG
    Inventor: Karl-Heinz Hohenwarter
  • Patent number: 8900400
    Abstract: A proximity head defined by a body having a length. The body includes a main bore defined therein and extending along the length. A resistor bore is defined in the body and extends along the length. The resistor bore defined below the main bore. A first plurality of bores defined between the main bore and the resistor bore and a second plurality of bores defined between the resistor bore and an exterior surface of the body. The exterior surface of the body defining a proximity surface of the proximity head.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: December 2, 2014
    Assignee: Lam Research Corporation
    Inventors: Arnold Kholodenko, Cheng-Yu (Sean) Lin, Russell Martin
  • Patent number: 8894803
    Abstract: A process for etching the surfaces of semiconductor substrates utilizes a texturing tank which introduces a process fluid through a circulating system. The process fluid is heated to a desired temperature and maintained at a desired concentration prior to entering a processing area where laminar flow is produced to more quickly and uniformly roughen the surface of semiconductor substrates. The texturing tank permits removal of bubbles and eliminates temperature stratification in the processing area.
    Type: Grant
    Filed: March 5, 2008
    Date of Patent: November 25, 2014
    Assignee: Heateflex Corporation
    Inventors: Jorge Ramirez, Hector Joel Castaneda, Melissa A. Tiongco
  • Publication number: 20140339192
    Abstract: A three-dimensional object fabrication method and apparatus to fabricate a three-dimensional object from a foamed material are provided. The method includes applying a solvent to dissolve the foamed material; dissolving and contracting the foamed material; and molding a three-dimensional object. The solvent is applied to a surface of the foamed material, thereby dissolving and contracting of the foamed material in a depth direction, or otherwise, the solvent is applied to an interior portion of the foamed material, thereby releasing air contained inside the foamed material and starting contraction of the foamed material itself. The method further includes adjusting an amount of the solvent depending on a thickness of the three-dimensional object, filling in a recess or a concavity formed in the foamed material with a molding material; solidifying the molding material as a mold; and transferring a shape of the recess or the concavity to the molding material.
    Type: Application
    Filed: May 9, 2014
    Publication date: November 20, 2014
    Applicant: RICOH COMPANY, LTD.
    Inventor: Satoshi Kitaoka
  • Publication number: 20140338751
    Abstract: A device of manufacturing a cascade thin film solar cell with improved productivity, and a thin film solar cell manufactured using the device have been disclosed. The thin film solar cell having a buffer layer formed by a method using the device has improved electrical characteristics.
    Type: Application
    Filed: October 14, 2013
    Publication date: November 20, 2014
    Applicant: SAMSUNG SDI CO., LTD.
    Inventor: Hyun-Chul Kim
  • Patent number: 8882960
    Abstract: An etchant is stored in a treating tank; a glass substrate is transported with transport rollers into the treating tank; the etchant is discharged from below the substrate to raise the substrate to a position above the transport rollers and below the surface of the etchant; the discharge of the etching liquid is stopped and the glass substrate is lowered to a position for contacting the transport rollers; the etchant is drained from the treating tank; and the glass substrate is unloaded with the transport rollers out of the treating tank. The disclosed method and apparatus can treat both front and back surfaces of the substrate uniformly.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: November 11, 2014
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Norio Yoshikawa, Kazuo Jodai, Yukio Tomifuji, Shigeki Minami, Kazuto Ozaki
  • Patent number: 8877075
    Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: November 4, 2014
    Assignee: Infineon Technologies AG
    Inventor: Johann Kosub
  • Patent number: 8877076
    Abstract: A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: November 4, 2014
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Sei Negoro, Ryo Muramoto, Toyohide Hayashi, Koji Hashimoto, Yasuhiko Nagai
  • Patent number: 8852383
    Abstract: A wet processing apparatus and method that takes advantage of a fluid meniscus to process at least a portion of a surface of an object. After one surface of the object has been processed another side or surface of the object can be similarly processed. This processing can be coating, etching, plating, to name a few. An application of the apparatus and method is in the semiconductor processing industry, especially, the processing of wafers and substrates. The method and apparatus also allows the processing of multiple surfaces of an electronic component.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: October 7, 2014
    Assignee: Materials and Technologies Corporation
    Inventor: Ricardo I. Fuentes
  • Publication number: 20140283992
    Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.
    Type: Application
    Filed: June 9, 2014
    Publication date: September 25, 2014
    Inventors: Tomoyuki AZUMA, Kenji YAMADA, Hiroyuki ARAKI, Koji ANDO
  • Publication number: 20140273497
    Abstract: Embodiments provided herein describe systems and methods for processing substrates. A substrate having a plurality of site-isolated regions defined thereon is provided. A plurality of wet processes is simultaneously performed. Each of the plurality of wet processes is performed on one of the plurality of site-isolated regions defined on the substrate. The simultaneously performing includes exposing each of the plurality of site-isolated regions to one of a plurality of wet processing formulations. Each of the plurality of wet processing formulations includes a component. The respective component is added to at least some of the plurality of wet processing formulations during the exposing. A processing condition is varied between at least two of the plurality of wet processes in a combinatorial manner.
    Type: Application
    Filed: December 17, 2013
    Publication date: September 18, 2014
    Applicant: Intermolecular Inc.
    Inventors: Makonnen Payne, Kim Van Berkel
  • Publication number: 20140264153
    Abstract: Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.
    Type: Application
    Filed: March 13, 2014
    Publication date: September 18, 2014
    Applicant: TEL FSI, Inc.
    Inventors: Kevin L. Siefering, William P. Inhofer
  • Publication number: 20140262028
    Abstract: An open-bottomed reactor cell for wet processing of substrates can be configured to confine a process liquid to an area under the cell (processing the “internal site”), or alternatively to exclude the process liquid from most of the area under the cell (processing the “external site”) without physical contact between the cell and substrate. A slight underpressure or overpressure maintained inside the main cavity of the cell causes the liquid to form a meniscus in the narrow gap between the cell and substrate rather than flowing outside the desired process area. An area under a peripheral channel outside the main cavity of the cell is shared by both the internal site and the external side, allowing the entire substrate to be processed.
    Type: Application
    Filed: August 29, 2013
    Publication date: September 18, 2014
    Applicant: Intermolecular, Inc.
    Inventor: Rajesh Kelekar
  • Patent number: 8834672
    Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: September 16, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Dug-Kyu Choi
  • Publication number: 20140251951
    Abstract: Systems and methods of treating, e.g., stripping and coating, a target surface of an article including a passageway are disclosed. The systems may fluidly connect a pressure masker including pressurized masking fluid to a first side of the passageway, passing the pressurized masking fluid through the passageway from the first side to a second side including the target surface, and, submerging at least a portion of the target surface in a treatment bath, wherein the pressurized masking fluid passing through the passageway prevents the treatment bath from entering the passageway.
    Type: Application
    Filed: March 11, 2013
    Publication date: September 11, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: Mark Lawrence Hunt, Michael Anthony DePalma
  • Patent number: 8828872
    Abstract: The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing the compound and a powder of particles or solid grains (13) in suspension; placing the material to be etched in the presence of the solution; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating active cavitation bubbles such that the chemical species is generated and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: September 9, 2014
    Assignees: Institut Polytechnique de Grenoble, Universite Joseph Fourier
    Inventors: Francis Baillet, Nicolas Gondrexon
  • Patent number: 8828255
    Abstract: The invention relates to a method for etching a structure (1) including at least one material (4) to be etched, said method consisting in: selecting at least one chemical species that can react with the material (4) to be etched; selecting at least one soluble compound that can release this chemical species; producing a solution (11) containing said compound; placing the structure (1) in a position such that the surface of the material to be etched is in the presence of the solution and additional bubbles of a gas; and producing high-frequency ultrasounds in the solution, at at least one frequency, capable of generating reactive cavitation bubbles such that the chemical species is generated in the presence of these additional bubbles and reacts with the material to be etched, thereby producing a soluble compound or a precipitate.
    Type: Grant
    Filed: May 12, 2010
    Date of Patent: September 9, 2014
    Assignees: Institut Polytechnique de Grenoble, Universite Joseph Fourier
    Inventors: Francis Baillet, Nicolas Gondrexon
  • Publication number: 20140231013
    Abstract: A substrate processing apparatus includes a phosphoric acid supply device for supplying phosphoric acid aqueous solution onto the upper surface of a substrate held on a spin chuck, a heater for emitting heat toward a portion of the upper surface of the substrate with the phosphoric acid aqueous solution being held on the substrate, a heater moving device for moving the heater to move a position heated by the heater within the upper surface of the substrate, a water nozzle for discharging water therethrough toward a portion of the upper surface of the substrate with the phosphoric acid aqueous solution being held on the substrate and a water nozzle moving device for moving the water nozzle to move the water landing position within the upper surface of the substrate.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 21, 2014
    Applicant: DAINIPPON SCREEN MFG. CO., LTD.
    Inventors: TAIKI HINODE, TAKASHI OTA, NAOKI FUJIWARA
  • Publication number: 20140231012
    Abstract: A substrate processing apparatus includes a spin chuck for holding a substrate horizontally, a phosphoric acid supply device for supplying phosphoric acid aqueous solution onto the upper surface of the substrate held on the spin chuck to form a liquid film of phosphoric acid aqueous solution covering the entire upper surface of the substrate, a heating device for heating the substrate with the liquid film of phosphoric acid aqueous solution held thereon and a pure water supply device for supplying pure water onto the liquid film of phosphoric acid aqueous solution.
    Type: Application
    Filed: February 11, 2014
    Publication date: August 21, 2014
    Applicant: DAINIPPON SCREEN MFG, CO., LTD.
    Inventors: Taiki HINODE, Takashi OTA, Naoki FUJIWARA
  • Publication number: 20140231010
    Abstract: A chemical supplier includes a chemical reservoir containing a chemical mixture at a room temperature, an inner space of the chemical reservoir being separated from surroundings, a supply line through which the chemical mixture is supplied to a process chamber from the chemical reservoir, an inline heater positioned on the supply line and heating the chemical mixture in the supply line to a process temperature, and a power source driving the chemical mixture to move the chemical mixture toward the process chamber.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 21, 2014
    Inventors: Sang-Jine PARK, Bo-Un YOON, Jeong-Nam HAN, Kee-Sang KWON, Doo-Sung YUN, Won-Sang CHOI
  • Publication number: 20140220778
    Abstract: According to one embodiment, a planarization method and a planarization apparatus are provided. In the planarization method, a work surface of a work piece is planarized by bringing the work surface of the work piece containing a silicon oxide film and a surface of a solid plate onto which hydrogen ions are adsorbed, into contact or extremely close proximity with one another in a state in which a process liquid containing fluorine ions is supplied to the surface of the solid plate.
    Type: Application
    Filed: September 9, 2013
    Publication date: August 7, 2014
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Akifumi GAWASE, Yukiteru Matsui, Gaku Minamihaba, Hajime Eda
  • Publication number: 20140213063
    Abstract: A wet chemical processing method and apparatus for use in semiconductor manufacturing and in other applications, is provided. The method and apparatus provide for energizing a processing liquid such as a cleaning or etching liquid using ultrasonic, megasonic or other energy waves or by combining the liquid with a pressurized gas to form a pressurized spray, or using both. The energized, pressurized fluid is directed to a substrate surface using a fluid delivery system and overcomes any surface tensions associated with liquids, solids, or air and enables the processing liquid to completely fill any holes such as contact holes, via holes or trenches, formed on the semiconductor substrate.
    Type: Application
    Filed: January 30, 2013
    Publication date: July 31, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Yen HSU, Shao-Yen KU, Chun-Li CHOU, Tsai-Pao SU
  • Patent number: 8778132
    Abstract: A fixture for etching PCD drill inserts is provided. The fixture design allows the fixture to be injection molded, significantly reducing costs and allowing the fixture to be disposed of after a single use. The fixture allows for faster use and more accurate etching of the PCD insert.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: July 15, 2014
    Assignee: Stingray Group, LLC
    Inventor: Allen Turner
  • Publication number: 20140191371
    Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.
    Type: Application
    Filed: January 7, 2013
    Publication date: July 10, 2014
    Applicant: International Business Machines Corporation
    Inventors: Eric A. Joseph, David W. Abraham, Roger W. Cheek, Alejandro G. Schroit, Ying Zhang