Abstract: A substrate processing method for removing liquid on a substrate having an uneven pattern formed on a surface of the substrate and drying the substrate. The substrate processing method includes: forming a laminate having a two-layer structure including a first material in a solid state forming a lower layer and a second material in a solid state forming an upper layer, in a concave portion of the pattern; removing the second material from the concave portion by performing at least one of a heating process, a light-emitting process, and a reaction process using gas with respect to the second material to sublimate, decompose, and gas-react the second material; and removing the first material from the concave portion by performing at least one of the heating process, the light-emitting process, and the reaction process using gas with respect to the first material to sublimate, decompose, and gas-react the first material.

Abstract: A method for figuring an optical surface of an optical element to achieve a target profile for the optical surface includes: applying a removal process to an extended region of the optical surface extending along a first direction to remove material from the extended region of the optical surface; adjusting a position of the optical surface relative to the removal process along a second direction perpendicular to the first direction to remove material from additional extended regions of the optical surface extending along the first direction at each of different positions of the optical surface along the second direction; and repeating the applying of the removal process and the adjusting of the optical surface relative to the removal process for each of multiple rotational orientations of the optical surface about a third direction perpendicular to the first and second directions to achieve the target profile of the optical surface.

Abstract: A probe head may be utilized to test an electronic device. The probe head may include a probe axis extending along a length of the probe head. The probe head may include a probe core including a first metal. The probe core may include a core surface having a first dimension. The first dimension may be perpendicular to the probe axis. The probe core may include a probe tip, for instance extending from the core surface along the probe axis. The probe tip has a second dimension that may be perpendicular to the probe axis. The second dimension may be less than the first dimension of the core surface. The probe head may include a cladding layer that includes a second metal. The cladding layer may be coupled around a perimeter of the probe core. The probe tip may extend beyond the cladding layer.

Abstract: Systems and methods for copper etch monitoring and control are described. Certain embodiments include utilizing thin-film cells to measure the absorbance of a copper etch solution to determine the etch rate of the solution. In another embodiment, a method of controlling etch rate of a copper etch solution includes detecting characteristics of the copper etch solution utilizing a sensor device, e.g., flow cell and/or attenuated total reflection probe, calculating, based on the detected characteristics of the copper etch solution, the etch rate of the copper etch solution, and adjusting the etch rate of the copper etch solution in response to the calculated etch rate deviating from a specified value.

Abstract: A substrate processing apparatus includes a connection portion connected to the common piping and having a flow space in its interior, a chemical liquid supplying piping connected to the connection portion, a drain piping connected to the connection portion, and a cleaning liquid supplying piping connected to the connection portion, the connection portion has a plurality of ports aligned along a flow direction of the flow space, and a common port, which, among these ports, is connected to one end of the common piping, is disposed, in regard to the flow direction, between a drain port, which, among these ports, is connected to the drain piping, and a cleaning liquid supplying port, which, among these ports, is connected to the cleaning liquid supplying piping.

Abstract: A method of making three-dimensional memory device includes forming a stack of insulating layers and silicon nitride sacrificial layers over a substrate, forming memory stack structures in the alternating stack, forming a trench through the alternating stack, selectively etching the silicon nitride sacrificial layers through the trench using a phosphoric acid solution, filling a sample container with a fixed quantity of the phosphoric acid solution that was used to etch the silicon nitride sacrificial layers, determining a weight of the sample container, determining if a threshold value indicative of the etching end point has been reached or exceeded based on the determined weight, stopping the etching of the silicon nitride sacrificial layers in response to determining that the threshold value indicative of the etching end point has been reached or exceeded to leave recesses between the insulating layers, and filling the recesses with electrically conductive layers.

Abstract: In a substrate liquid processing method for performing an etching process by bringing an etching liquid for removing a coating film into contact with a surface of a substrate having a recess and covered with a coating film inside and outside the recess, the substrate liquid processing method includes: a first coating film removal step of setting the etching liquid to a first temperature so as to attain a first etching rate and removing the coating film outside the recess in a first process time; and thereafter, a second coating film removal step of setting the etching liquid to a second temperature so as to attain a second etching rate lower than the first etching rate and removing the coating film outside the recess in the second process time while leaving the coating film inside the recess.

Abstract: An electrostatic chuck device comprising: a placing table having a placing surface on which a plate-shaped sample is placed, an electrostatic attraction electrode, which is located on a lower side of the placing table in such a manner that the electrode is located on a surface side opposite to the placing surface of the placing table, a base part on which at least the placing table and the electrostatic attraction electrode are mounted, a focus ring which surrounds the placing table wherein the focus ring is a continuous ring or is divided into two or more portions, and a lift pin which is movable in an up-down direction and raises the entirety of or at least a part of the focus ring from the base part.

Abstract: An electrostatic chuck mechanism and a semiconductor processing device having the same are provided. The electrostatic chuck mechanism includes a base, an edge assembly, a main electrostatic heating layer, and an edge electrostatic heating layer. The base includes a loading surface for loading a wafer and a step surface surrounding the loading surface and located at an edge portion of the wafer. The edge assembly includes a focus ring disposed above the step surface and surrounding the loading surface, and an insulation ring disposed at a bottom of the base and supporting the base. The main electrostatic heating layer, disposed above the loading surface, is configured to secure the wafer and adjust temperature of the wafer. The edge electrostatic heating layer, disposed above the step surface, is configured to secure the focus ring and adjust temperature of the focus ring.

Abstract: A wafer etching apparatus and a method for controlling an etch bath of a wafer is provided. The wafer etching apparatus includes an etching tank comprising an etch bath, an etch bath recycle system connected to the etching tank, a real time monitor (RTM) system connected to the etching tank, and a control system coupled with the RTM system and the etch bath recycle system. The wafer etching apparatus and the method for controlling an etch bath of the wafer both control the silicate concentration in the etch bath to stable an etching selectivity with respect to silicon oxide and silicon nitride.

Abstract: A wet etching system operating method includes providing an etching apparatus having an Nth etching solution, loading Nth batch substrates into the etching apparatus and performing an Nth etching process, discharging some of the Nth etching solution, refilling the etching apparatus with an (N+1)th etching solution supplied from a supply apparatus connected to the etching apparatus, and loading (N+1)th batch substrates into the etching apparatus and performing an (N+1)th etching process, wherein the (N+1)th etching solution has a temperature within or higher than a temperature management range of the (N+1)th etching process, and wherein the (N+1)th etching solution has a concentration within or higher than a concentration management range of the (N+1)th etching solution, N being a positive integer.

Abstract: A method of controlling polishing includes sweeping a sensor of an in-situ monitoring system across a substrate as a layer of the substrate undergoes polishing, generating from the in-situ monitoring system a sequence of signal values that depend on a thickness of the layer, detecting from the sequence of signal values, a time that the sensor traverses a leading edge of the substrate or a retaining ring and a time that the sensor traverses a trailing edge of the substrate or retaining ring; and for each signal value of at least some of the sequence of signal values, determining a position on the substrate for the signal value based on the time that the sensor traverses the leading edge and the time that the sensor traverses a trailing edge.

Abstract: Disclosed is a plasma processing apparatus including: a placing table including a focus ring placed thereon and an electrode provided therein so as to face the focus ring; and a voltage application unit that applies, to the electrode, voltages having different polarities in cycles or a voltage having a large absolute value in steps, during a plasma processing period.

Abstract: A method for fabricating a structure having surfaces exposed to plasma in a substrate processing system includes providing a sacrificial substrate having a first shape, machining the substrate into a second shape, the second shape having dimensions corresponding to a desired final shape of the structure, depositing a layer of material on the substrate, machining first selected portions of the layer of material to expose the substrate within the layer of material, removing remaining portions of the substrate, and machining second selected portions of the layer of material into the structure having the desired final shape without machining the surfaces of the structure that are exposed to plasma during processing.

Abstract: Apparatus for processing semiconductors are provided herein. In some embodiments, an apparatus for processing a substrate may include: a first ring disposed concentrically about a substrate support, the first ring configured to position a substrate atop the substrate support during processing; and a second ring disposed between the substrate support and the first ring, the second ring configured to provide a heat transfer path from the first ring to the substrate support.

Abstract: One system includes a chamber, a chuck assembly, and an ion source. The chuck assembly includes a substrate support and a precession assembly with a center support coupled to a stationary center point of an under region of the substrate support. The precession assembly includes first and second actuators connected to first and second locations, respectively, that are in the under region off-set from the center point. The precession assembly imparts a precession motion to the substrate support when the first actuator and the second actuator move up and down relative to the center support, and the precession motion imparted to the substrate causes a rotating tilt of the substrate support without rotation of the substrate support. The rotating tilt of the substrate is configured to cause ions generated by the ion source to impinge upon a surface of the substrate in continually varying angles of incidence.

Abstract: An etching method includes disposing a target substrate within a chamber. The target substrate has a first silicon oxide film formed on a surface of the target substrate by a chemical vapor deposition method or an atomic layer deposition method, a second silicon oxide film that includes a thermally-oxidized film and a silicon nitride film. The second silicon oxide film and the silicon nitride are formed adjacent to the first silicon oxide film. The etching method further includes supplying an HF gas and an alcohol gas or water vapor into the chamber to selectively etch the first silicon oxide film with respect to the second silicon oxide film and the silicon nitride film.

Abstract: A system and method of etching a semiconductor device are provided. Etching solution is sampled and analyzed by a monitoring unit to determine a concentration of components within the etching solution, such as an oxidant concentration. Then, based upon such measurement, a makeup amount of the components may be added be a makeup unit to the etching solution to control the concentration of the components within the etching system.

Abstract: Provided is a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a set etch selectivity ratio, placing the substrate into the etch processing chamber, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber, wherein the flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a set etch rate and a set etch selectivity ratio of the masking layer to silicon or silicon oxide.

Abstract: Disclosed is a process for cleaning polycrystalline silicon chunks in an acidic cleaning bath, wherein: (a) the cleaning includes several cleaning cycles, (b) a particular amount of acid is consumed in each cycle, (c) a computer-controlled dosage system integrator adds up those amounts of acid consumed in each cycle to give a current total consumption of acid in the bath, and (d) on attainment of a total consumption of acid in the bath corresponding to an optimal dosage of the dosage system, the dosage system supplies this optimal dosage of unconsumed acid withdrawn from a reservoir vessel to the bath. Another process for cleaning polycrystalline silicon chunks in an acidic cleaning bath includes an acid circuit in which acid is circulated, wherein the ratio of amount of acid circulated in liters to the mass of polysilicon chunks present in the bath in kg is greater than 10.

Abstract: A processing liquid supplying apparatus supplies a processing liquid to a process object via a discharging part. In one embodiment, the apparatus includes: a processing liquid source that supplies a processing liquid; an intermediate tank connected to the processing liquid source via a transport line; a feed line provided between the intermediate tank and the discharging part; an evacuating unit that evacuates an interior of the intermediate tank to transport the processing liquid from the processing liquid source to the intermediate tank through the transport line; and a pressure adjusting unit that supplies a gas into the intermediate tank to return a pressure in the evacuated intermediate tank from a reduced pressure to a normal pressure, thereby to place the intermediate tank ready for feeding the processing liquid, having been transported into the intermediate tank, into the feed line.

Abstract: A substrate processing apparatus and method includes, a plate that has a size equal to or larger than a principal face of the substrate, and has a horizontal and flat liquid holding face opposing the principal face of the substrate from below. A processing liquid supply unit supplies a processing liquid to the liquid holding face. A control unit controls the processing liquid supply unit and a movement unit to supply the processing liquid to the liquid holding face to form a processing liquid film, a contact step of bringing the principal face of the substrate and the liquid holding face close to each other to bring the principal face of the substrate into contact with the processing liquid film, and a liquid contact maintenance step of maintaining the processing liquid in contact with the principal face of the substrate.

Abstract: Disclosed is an adjustable semiconductor processing apparatus and a control method thereof. The apparatus comprises a micro chamber with an upper chamber portion defining an upper working surface and a lower chamber portion defining a lower working surface that are relatively moveable towards each other between an open position and a closed position. When the chamber is in the closed position, a cavity formed by the upper working surface and the lower working surface defines a gap between the upper working surface, the lower working surface and a semiconductor wafer received in the cavity for flow of a processing fluid. A drive device enables the upper working surface of the upper chamber portion or/and the lower working surface of the lower chamber portion to tilt or deform to control flow of chemical agents within the micro chamber.

Abstract: A manufacturing apparatus includes a chuck for contacting a peripheral portion of a workpiece. The apparatus includes a nozzle to eject a process fluid (liquid or gas) toward a first surface while the workpiece is in contact with the chuck. The apparatus also includes a plate having an opening configured such that a support fluid (liquid or gas) can be ejected toward a second surface of the workpiece while the workpiece is in contact with the chuck. In an example, the support fluid can be used to counteract a displacement of the interior portion in the direction perpendicular to the plane of the workpiece due to, for example, gravity and/or hydrostatic pressure of the process fluid.

Abstract: An apparatus comprising: a processing liquid supply unit; a volatile processing liquid supply unit; a substrate heating unit; and a controller to control the volatile processing liquid supply unit and the substrate heating unit, wherein the controller executes a process of supplying the processing liquid to the substrate, a process of heating the substrate on which a liquid film of the processing liquid is formed, a process of supplying a volatile processing liquid, a process of stopping the supply of the volatile processing liquid, and a process of drying the substrate by removing the volatile processing liquid, and wherein the process of heating the substrate starts before the process of supplying the volatile processing liquid, and the substrate heating unit heats the substrate so that the surface temperature of the substrate is higher than a dew point before the surface of the substrate is exposed from the volatile processing liquid.

Abstract: A substrate processing method includes an SPM supplying step of supplying SPM having high temperature to an upper surface of a substrate, a DIW supplying step of supplying, after the SPM supplying step, DIW having room temperature to the upper surface of the substrate to rinse off the liquid remaining on the substrate, a hydrogen peroxide water supplying step of supplying, after the SPM supplying step and before the DIW supplying step, hydrogen peroxide water of a liquid temperature lower than the temperature of the SPM and not less than room temperature, to the upper surface of the substrate in a state where the SPM remains on the substrate, and a temperature decrease suppressing step of supplying, in parallel to the hydrogen peroxide water supplying step, pure water having high temperature to a lower surface of the substrate.

Abstract: Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers.

Abstract: A substrate processing method includes a water removing unit for removing water from a substrate, a silylating agent supplying unit for supplying a silylating agent to the substrate and an etching agent supplying unit for supplying an etching agent to the substrate. A control unit controls the said units to execute a water removing step, a silylating step and an etching step in that order.

Abstract: A method for etching a workpiece may be provided, which may include: determining a plurality of reference etch profiles for a plurality of positions of an etchant dispenser, each reference etch profile corresponding to a respective position of the plurality of positions of the etchant dispenser; determining a thickness profile of the workpiece; determining a respective etch duration for each position of the plurality of positions of the etchant dispenser based on the determined thickness profile and the plurality of reference etch profiles, to reduce a total thickness variation of the workpiece; and dispensing an etchant over the workpiece via the etchant dispenser for the determined respective etch duration for each position of the plurality of positions.

Abstract: A flexible substrate treatment device comprising at least one tank that accommodates treatment liquid, winding rollers including a main roller and a driven roller located above the treatment liquid, a positioning roller located in the treating liquid in each tank, a detecting unit configured to detect radius or diameter of at least one of the winding rollers, and a movable discharge member fixed to a side wall of each tank, including a movable discharge port configured to discharge the treatment liquid and a discharge port position controlling mechanism, wherein the movable discharge port can be moved in a direction X perpendicular to a bottom wall of the tank.

Abstract: Disclosed herein are electroplating systems for forming a layer of metal on a wafer which include an electroplating module and a wafer edge imaging system. The electroplating module may include a cell for containing an anode and an electroplating solution during electroplating, and a wafer holder for holding the wafer in the electroplating solution and rotating the wafer during electroplating. The wafer edge imaging system may include a wafer holder for holding and rotating the wafer through different azimuthal orientations, a camera oriented for obtaining multiple azimuthally separated images of a process edge of the wafer while it is held and rotated (the process edge corresponding to the outer edge of the layer of metal formed on the wafer), and image analysis logic for determining an edge exclusion distance, wherein the edge exclusion distance is a distance between the wafer's edge and the process edge.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: A printing process for printing (P) an ink pattern on a substrate is provided. The ink pattern to be printed is based on an available pattern layout (R). The pattern layout defines a desired layout of the ink pattern to be printed. Based on the pattern layout an input image (rii) for allocating dot positions of the ink pattern is generated. The printing process comprises a step of comparing a scan (S) image (rsi) with the input image to carry out a quality inspection (Q) to detect any print defects in the printed ink pattern. The printing process comprises a step of providing a decision (os) on an approval or a rejection of the printed ink pattern. In case of an approval, the substrate can be supplied to a subsequent processing station (E) to finalise the substrate. In case of a rejection, the substrate including print defects can be recycled (D).

Abstract: A substrate processing method is performed to improve surface roughness of a pattern mask formed on a substrate by being exposed and developed. The method includes supplying a first solvent in a gaseous state to a surface of the substrate to dissolve the pattern mask, and supplying a second solvent to the surface of the substrate, which is supplied with the first solvent, to dissolve the pattern mask, wherein a permeability of the second solvent is lower than a permeability of the first solvent.

Abstract: The flow rate controller controlling a flow rate of gas supplied through a gas passage includes: a main gas pipe; a flow rate detecting unit detecting the flow rate of gas supplied through the main gas pipe and outputting a flow rate signal; a flow rate control valve mechanism controlling a flow rate; a conversion data storage unit storing a plurality of pieces of conversion data corresponding to a plurality of gaseous species, to indicate a relationship between a flow rate instruction signal input from outside and a target flow rate; and a flow rate control main body which selects the corresponding conversion data from the conversion data based on a gaseous species selection signal input from outside, calculates the target flow rate based on the flow rate instruction signal, and controls the flow rate control valve mechanism based on the target flow rate and the flow rate signal.

Abstract: A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component.

Abstract: An etchant is stored in a treating tank; a glass substrate is transported with transport rollers into the treating tank; the etchant is discharged from below the substrate to raise the substrate to a position above the transport rollers and below the surface of the etchant; the discharge of the etching liquid is stopped and the glass substrate is lowered to a position for contacting the transport rollers; the etchant is drained from the treating tank; and the glass substrate is unloaded with the transport rollers out of the treating tank. The disclosed method and apparatus can treat both front and back surfaces of the substrate uniformly.

Abstract: A substrate edge bevel etch module for etching a material from a peripheral edge of a substrate with an etchant is described. The substrate edge bevel etch module includes a rotatable substrate holder having a support for a substrate, and a surface tension etch applicator comprising a wetted etching surface opposing a substrate surface proximate an edge of the substrate when the surface tension etch applicator is located proximate to the edge of the substrate. The surface tension etch applicator further includes an etchant dispensing portion, proximate the wetted etching surface, which dispenses an etchant in a region between the wetted etching surface and the substrate surface and wet at least a portion of the wetted etching surface and the substrate surface. A spacing between the wetted etching surface and the substrate surface is selected to retain the etchant using surface tension forces and form a meniscus there between.

Abstract: A disclosed gas supplying apparatus includes a pressure controller that reduces a primary pressure thereby providing a secondary pressure greater than a process pressure at which a predetermined process is performed and less than the atmospheric pressure in a secondary pipe; a pressure sensor that measures a pressure in the secondary pipe; a first open/close valve provided in the secondary pipe; an open/close valve controller that opens or closes the first open/close valve; a pressure comparator that compares the pressure measured by the pressure sensor in the secondary pipe with a first set pressure that is greater than the process pressure by a predetermined pressure; and a controller that outputs a signal to the open/close valve controller thereby closing the first open/close valve, when the pressure comparator determines that the pressure in the secondary pipe is less than the first set pressure.

Abstract: A multiple channel site-isolated reactor system and method are described. The system contains a reactor block with a plurality of reactors. Input lines are coupled to each reactor to provide a fluid to the respective reactors. A sealing element associated with each reactor contacts a surface of a substrate disposed below the reactor block, which defines isolated regions on the surface of the substrate. A dissolution rate monitor extends into each reactor to monitor a rate of real-time dissolution of one or more layers on the surface of the substrate when it is disposed proximate to the surface of the substrate.

Abstract: A wet processing apparatus and method that takes advantage of a fluid meniscus to process at least a portion of a surface of an object. After one surface of the object has been processed another side or surface of the object can be similarly processed. This processing can be coating, etching, plating, to name a few. An application of the apparatus and method is in the semiconductor processing industry, especially, the processing of wafers and substrates. The method and apparatus also allows the processing of multiple surfaces of an electronic component.

Abstract: A wet etching apparatus comprises a reservoir unit for storing aqueous solution of phosphoric acid, an additive reservoir unit for storing a silica additive; a concentration detecting unit configured to detect the silica concentration in the aqueous solution of phosphoric acid stored in the reservoir unit; a control unit configured to supply the silica additive from the additive reservoir unit to the reservoir unit if the silica concentration in the aqueous solution of phosphoric acid, detected by the concentration detecting unit, is lower than a prescribed value; and a processing unit configured to process the substrate with the aqueous solution of phosphoric acid stored in the reservoir unit.

Abstract: A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.

Abstract: A substrate processing apparatus includes a first processing chamber and a second processing chamber, a first substrate holding unit that holds a substrate in the first processing chamber, a chemical solution supply unit that supplies a chemical solution containing an etching component and a thickening agent to the substrate held by the first substrate holding unit, a substrate transfer unit that transfers the substrate from the first processing chamber to the second processing chamber in a state in which the chemical solution is held on the substrate, and a second substrate holding unit that holds a plurality of substrates on each of which the chemical solution is held in the second processing chamber.

Abstract: An open-bottomed reactor cell for wet processing of substrates can be configured to confine a process liquid to an area under the cell (processing the “internal site”), or alternatively to exclude the process liquid from most of the area under the cell (processing the “external site”) without physical contact between the cell and substrate. A slight underpressure or overpressure maintained inside the main cavity of the cell causes the liquid to form a meniscus in the narrow gap between the cell and substrate rather than flowing outside the desired process area. An area under a peripheral channel outside the main cavity of the cell is shared by both the internal site and the external side, allowing the entire substrate to be processed.

Abstract: Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.

Abstract: A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.

Abstract: According to one embodiment, there is provided pressure controlling apparatus including a detecting unit, an exhaust pipe, a regulating valve, and a pressure controlling unit. The regulating valve includes a valve port, a changing unit, and a slide valve. The valve port is communicated with the exhaust pipe. The changing unit changes a shape of the valve port to a different shape whose center is located near the central axis of the exhaust pipe. The slide valve regulates an opening degree of the valve port changed by the changing unit. The pressure controlling unit controls changing of a shape of the valve port by the changing unit and regulation of an opening degree of the valve port by the slide valve.

Abstract: A method and apparatus for controlling a silicon nitride etching bath provides the etching bath including phosphoric acid heated to an elevated temperature. The concentration of silicon in the phosphoric acid is controlled to maintain a desired level associated with a desired silicon nitride/silicon oxide etch selectivity. Silicon concentration is measured while the silicon remains in soluble form and prior to silica precipitation. Responsive to the measuring, fresh heated phosphoric acid is added to the etching bath when necessary to maintain the desired concentration and silicon nitride:silicon oxide etch selectivity and prevent silica precipitation. The addition of fresh heated phosphoric acid enables the etching bath to remain at a steady state temperature. Atomic absorption spectroscopy may be used to monitor the silicon concentration which may be obtained by diluting a sample of phosphoric acid with cold deionized water and measuring before silica precipitation occurs.

Abstract: A method for manufacturing a glass cliché using laser etching includes a dipping step for dipping a glass cliché, which will be etched, into an etching solution, a patterning step for irradiating laser to the glass cliché dipped in the etching solution to form a pattern therein, and a washing step for washing the patterned glass cliché. This method allows making a cliché with a high aspect ratio and fine line widths in comparison to a conventional cliché manufacturing method using photoresist for etching, and also ensures more efficient energy consumption and higher etching efficiency rather than an etching method using laser only.