Abstract: A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

Abstract: Disclosed is a showerhead of a CVD apparatus comprising a plate having an empty inside and provided with a plurality of injection holes at one surface thereof; and gas supplying pipes installed at the plate so as to supply gas, wherein introduced gas thereto is injected to an upper space of the wafer through the injection holes, the plate is divided in a radial manner on the basis of a center point to be divided into a plurality of sectors having respective inner spaces independently, and the gas supplying pipes are connected to the respective sectors. According to that, gas can be independently supplied to each sector of the showerhead, thereby easily applying the CVD apparatus not only to a batch type process but also to an atomic layer deposition method.

Abstract: Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

Abstract: A substrate processing apparatus comprises roll chucks for holding and rotating a substrate, a closable chamber housing the roll chucks therein, and a gas introduction pipe for introducing a gas into the chamber. The substrate processing apparatus further comprises an etching unit for etching and cleaning a peripheral portion of the substrate while the substrate is being rotated by the roll chucks, and a first supply passage for supplying a first liquid to the etching unit.

Abstract: A method and apparatus for dispensing a liquid on the surface of a localized zone of a substrate, for example for cleaning of etching purposes. Along with the liquid, a gaseous tensio-active substance is supplied, which is miscible with said liquid and when mixed with the liquid, reduces the surface tension of said liquid, thus containing the liquid in a local zone of the substrate surface.

Abstract: The inventive device for cleaning substrates, especially semiconductor wafers, comprises a treatment basin for receiving at least one substrate, a cover for sealing said treatment basin, a first feeding device for controllably feeding in a reactive gas, a second feeding device for controllably feeding in at least one moist fluid for promoting a reaction between the reactive gas and a deposit to be removed from the substrate and a control device for controlling the concentration of moisture in the treatment basin.

Abstract: A device and method for processing substrates, whereby medium consumption and processing time are reduced. According to the inventive method, liquid is conducted to a surface of the substrate that is to be treated via at least one nozzle that is arranged in a substantially centric position with respect to said substrate and via a plurality of second nozzles that are controlled separately from the first nozzle.

Abstract: A method for dispensing a chemical, such as an edge bead removal solvent, onto a semiconductor wafer comprising the steps of dispensing the chemical selectively onto the wafer and applying a suction to the area immediately surrounding the location at which the chemical is dispensed onto the wafer. Preferably, the suction is applied substantially simultaneously with the dispensing of the chemical. One specific version of the invention provides an edge bead removal system wherein suction is applied to the area immediately surrounding the solvent dispensing nozzle to remove dissolved coating material and excess solvent from the wafer. In one aspect of this system, an apparatus for removing the edge bead includes a mechanism for dispensing a solvent selectively onto the edge of the wafer, and a mechanism surrounding the dispensing mechanism for vacuuming excess solvent and dissolved coating material from the edge of the wafer.

Abstract: A method and apparatus for cleaning a web-based chemical-mechanical planarization (CMP) system. Specifically, a fluid spray bar is coupled to a frame assembly which may be mounted on a CMP system. The fluid spray bar will move along the frame assembly. As the fluid spray bar traverses the length of the frame assembly, a cleaning fluid is sprayed onto the web in order to clean the web between planarization cycles.

Abstract: An ultrasonic driver (105) is used to vibrate a filter disk (103) at ultrasonic frequencies. Vibrations are used to break up agglomerates into smaller pieces that pass through filter disk (103). The energy is controlled to minimize the translational energy given to the particles as they are broken up to prevent reagglomeration. The frequency and amplitude of the vibration is controlled to operate out of or in low energy cavitation.

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems apply liquid etchant in a precise manner at the edge bevel region of the wafer under viscous flow conditions, so that the etchant is applied on to the front edge area and flows over the side edge and onto the back edge in a viscous manner. The etchant thus does not flow or splatter onto the active circuit region of the wafer. An edge bevel removal embodiment involving that is particularly effective at obviating streaking, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

Abstract: A wafer chuck includes alignment members that allows a semiconductor wafer to be properly aligned on the chuck without using a separate alignment stage. The alignment members may be cams, for example, attached to arms of the wafer chuck. These members may assume an alignment position when a robot arm places the wafer on the chuck. In this position, they guide the wafer into a proper alignment position with respect to the chuck. During rotation at a particular rotational speed, the alignment members move away from the wafer to allow liquid etchant to flow over the entire edge region of the wafer. At still higher rotational speeds, the wafer is clamped into position to prevent it from flying off the chuck. A clamping cam or other device (such as the alignment member itself) may provide the clamping.

Abstract: The present invention relates to a method and apparatus for automatically measuring the concentration of total organic carbon (TOC) in chemicals and ultra-pure water that are used in a wet etch process. The apparatus includes a sampling line extending from a processing bath, and a pump, for extracting a fluid sample from the processing bath, a buffer for filtering foreign material or air bubbles from the fluid, and an analyzer for analyzing the concentration of TOC in the fluid.

Abstract: A particle measurement configuration measures the particle concentration in a liquid or gaseous medium by way of a particle measuring instrument. In order to avoid erroneous measurements or damage to the particle measuring instrument, a measuring cell is provided which measures temperature or pressure or pH of the medium. A system controller shuts off a valve if threshold values are exceeded and it prevents the particle measuring instrument from being operated outside a predefined specification.

Abstract: A nozzle assembly for use in atomizing and generating sprays from a fluid. The nozzle assembly includes two members, each with generally planar surfaces, that are joined together. A first set of channels is formed in the generally planar surface of a first one of the members to form, in cooperation with the generally planar surface of the second of the members, a plurality of filter passageways. A plenum chamber is formed in the first member. The plenum chamber is in fluid communication with and downstream of the plurality of filter passageways. A second set of channels is formed in the generally planar surface of the first member to form, in cooperation with the generally planar surface of the second member, a plurality of nozzle outlet passageways. These nozzle outlet passageways are in fluid communication with the plenum chamber.

Abstract: A support member of a rotary base member engages with a substrate for preventing the substrate from horizontal movement and rotation with respect to the rotary base member while allowing vertical movement of the substrate, and a proximity suction plate is provided above the rotary base member so that the lower surface thereof is formed on a plane on the rotary base member parallel to the substrate for downwardly and outwardly injecting gas toward the overall upper surface of the substrate and sucking the substrate in a proximity state by Bernoulli effect. It is possible to provide an apparatus capable of reliably preventing mist of a processing solution or the processing solution from reaching the upper surface of the substrate when rotating the substrate and supplying the processing solution to the lower surface for processing the substrate.