Abstract: An electrochemical plating apparatus for performing an edge bevel removal process on a wafer includes a cell chamber. The cell chamber includes two or more nozzles located adjacent to the edge of the wafer. A flow regulator is arranged with each of the two or more nozzles, which is configured to regulate an tap width of a deposited film flowing out through the each of the two or more nozzles. The electrochemical plating apparatus further includes a controller to control the flow regulator such that tap width of the deposited film includes a pre-determined surface profile. The two or more nozzles are located in radially or angularly different dispensing positions above the wafer.

Abstract: A substrate processing apparatus includes: a temperature raising part for raising a temperature of a first sulfuric acid; a mixing part for mixing the first sulfuric acid where the temperature is raised by the temperature raising part with a moisture-containing liquid to generate a mixed solution; and a discharging part for discharging the mixed solution onto a substrate inside a substrate processing part. The mixing part includes: a joining portion where a sulfuric acid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part flows and a liquid supply line through which the first sulfuric acid where the temperature is raised by the temperature raising part and the moisture-containing liquid flows are joined; and a reaction suppression mechanism for suppressing a reaction between the first sulfuric acid and the moisture-containing liquid in the joining portion.

Abstract: Provided is an apparatus for processing a substrate including a spin head on which a substrate is placed, a container provided to surround the spin head, an upper nozzle member supplying a processing solution downwards, a bottom cleaning member located to be a certain distance from the bottom of the spin head, wherein the bottom cleaning member sprays a cleaning solution to the bottom of the spin head.

Abstract: A method for processing a substrate is provided. The method includes the following operations: placing a substrate over a first injector in a substrate processing apparatus, the substrate having a front surface and a back surface opposite to the front surface, and the front surface having a plurality of concentric regions; adjusting a temperature of each of the plurality of concentric regions by controlling at least one of a flow rate and a temperature associated with a fluid dispensing from the first injector; and rotating the substrate by a spin base disposed below the substrate, the substrate is rotated with respect to a center axis perpendicular to the front surface thereof when adjusting the temperature. The spin base includes a ring opening for rotating relative to the first injector, and the first injector is displaced from a projection of a center of the substrate from a top view perspective.

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.

Abstract: A method for treating a substrate includes a mixing step of preparing an ozone treatment fluid containing an ozone gas and a substrate treating step of treating a surface of the substrate using the ozone treatment fluid. In the substrate treating step, light is irradiated to the substrate by a lamp.

Abstract: A method of drying a substrate after processing the substrate with a processing liquid (e.g., DIW) includes drying the substrate by moving, after forming a liquid film by supplying a first drying liquid (e.g., IPA) having higher volatility than the processing liquid onto the substrate W, a supply position P1 of the first drying liquid such that a distance R1 from a rotation center O of the substrate to the supply position P1 of the first drying liquid is gradually increased, while rotating the substrate, to expand a dry region DC in a concentric shape. The drying of the substrate comprises supplying a second drying liquid onto the substrate while supplying the first drying liquid. A distance R2 from the rotation center to a supply position P2 of the second drying liquid is larger than the distance R1 from the rotation center to the supply position P1.

Abstract: A substrate holding apparatus that can minimize a deflection amount of a substrate due to its own weight and can suppress vibration of the substrate at the time of rotation of the substrate even if a diameter of the substrate becomes large is disclosed. The substrate holding apparatus holds a periphery of a substrate and rotates the substrate. The substrate holding apparatus includes a plurality of support posts supported by a base and vertically movable relative to the base, a plurality of chucks respectively provided on the plurality of support posts and configured to hold the periphery of the substrate, and at least one support pin configured to support a lower surface of the substrate held by the plurality of chucks.

Abstract: A substrate processing apparatus includes a substrate holding unit which holds and rotates a substrate in a horizontal orientation, a substrate heating unit which has a heating surface which faces the substrate, held by the substrate holding unit, from below and overlaps with an outermost periphery of the substrate in top view, and heats the substrate in a state of contacting a lower surface of the substrate, a transferring unit which transfers the substrate between the substrate holding unit and the substrate heating unit, and a processing fluid supplying unit which supplies a processing fluid toward the substrate held by the substrate holding unit.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a supporter configured to support a wafer. The apparatus further includes a first member including a first portion that faces a first region on an upper face of the wafer and a second portion that intervenes between the wafer and the first portion. The apparatus further includes a second member including a third portion that faces a second region on the upper face of the wafer and a fourth portion that intervenes between the wafer and the third portion. The apparatus further includes a first liquid feeder configured to feed a first liquid for processing the wafer to the first region, a first gas feeder configured to feed a first gas between the wafer and the first portion, and a second gas feeder configured to feed a second gas between the wafer and the second portion.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: A method for forming a photoresist layer includes the following steps. A first photoresist layer is formed on a first wafer provided on a platen. The platen includes a plurality of temperature zones being at a first set of process temperatures. A first etching process is performed on the first wafer to form a first patterned metal layer. A profile variation of the first patterned metal layer with respect to a reference profile is determined. The first set of process temperatures is adjusted to a second set of process temperatures according to the profile variation. A second photoresist layer is formed on a second wafer provided on the platen with the temperature zones being at the second set of process temperatures respectively.

Abstract: A resist film including a metallic component and a photosensitive material is formed on a surface of a substrate, and then a peripheral portion of the resist film on the substrate is irradiated with light by an edge exposer. Subsequently, development processing is performed with a development liquid from a nozzle on the exposed portion of the resist film. Thus, the part of the resist film formed on the peripheral portion of the substrate is removed. Thereafter, exposure processing is performed on the substrate in an exposure device, so that an exposure pattern is formed on the resist film. Then, a development liquid is supplied to the exposed substrate in a development processing unit, so that development processing is performed on the resist film.

Abstract: In one embodiment, a clean gas supply mechanism includes a supply path having an upstream end provided with a gas intake port, and a downstream end connected to a treatment chamber. The supply path is provided therein with a fan, and a filter disposed upstream of the fan. A return path branches from the supply path at a first position downstream of the fan and upstream of the treatment chamber and is connected to the supply path at a second position downstream of the filter and upstream of the fan. A switching mechanism selectively switches between a first state where the clean gas flows into the treatment chamber, and a second state where the clean gas returns to the supply path through the return path.

Abstract: Methods of dicing substrates having a plurality of ICs are disclosed. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer is washed off.

Abstract: Some embodiments relate to methods and apparatus for providing a homogeneous wafer temperature profile in a wafer cleaning tool without introducing unwanted particles onto the wafer. In some embodiments, a disclosed wafer cleaning tool has a processing chamber configured to house a semiconductor wafer. A dispensing arm provides a high temperature cleaning solution to the semiconductor wafer. A heating cup is located within the processing chamber at a position that is around the perimeter of the semiconductor wafer. The heating cup generates heat that increases the temperature of outer edges of the semiconductor wafer by a greater amount than a temperature of a center of the semiconductor wafer, thereby homogenizing an internal temperature profile of the semiconductor wafer.

Abstract: A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.

Abstract: A substrate processing includes a holding mechanism, a plurality of nozzles, and an adjusting unit. The holding mechanism rotatably holds a substrate. The nozzles are disposed to be arranged in a diametric direction of the substrate held by the holding mechanism and supply a chemical liquid to the substrate. The adjusting unit supplies a chemical liquid of a first temperature and a chemical liquid of a second temperature to each of the plurality of nozzles in a predetermined ratio, in which the second temperature is higher than the first temperature. The adjusting unit supplies the chemical liquid of the second temperature in a higher ratio to a nozzle disposed at an outer circumference side of the substrate than to a nozzle disposed at a center side of the substrate. In addition, the adjusting unit supplies the chemical liquid of the second temperature in a higher ratio to the nozzle disposed at the outer circumference side of the substrate than to the nozzle disposed at the center side of the substrate.

Abstract: A manufacturing apparatus includes a chuck for contacting a peripheral portion of a workpiece. The apparatus includes a nozzle to eject a process fluid (liquid or gas) toward a first surface while the workpiece is in contact with the chuck. The apparatus also includes a plate having an opening configured such that a support fluid (liquid or gas) can be ejected toward a second surface of the workpiece while the workpiece is in contact with the chuck. In an example, the support fluid can be used to counteract a displacement of the interior portion in the direction perpendicular to the plane of the workpiece due to, for example, gravity and/or hydrostatic pressure of the process fluid.

Abstract: A chemical engraving machine to engrave a plate of stainless steel moved along an horizontal direction, said machine comprising a base, an acid liquid circuit adapted to chemically attack said plate of stainless steel at locations where it is not protected by a protection mask, a lower guiding device, an upper guiding device, the lower and upper guiding devices being configured to maintain said plate of stainless steel substantially vertically, and a nozzle support bearing a plurality of spraying nozzles projecting horizontally the acid liquid toward the plate of stainless steel. A method chemically engraves a plate of stainless steel in a vertical position.

Abstract: A substrate processing method for removing an Si-based film on a surface of a substrate accommodated in a processing chamber includes a first step in which the Si-based film on the surface of the substrate is transformed into a reaction product by a gas containing a halogen element and an alkaline gas in the processing chamber and a second step in which the reaction product is vaporized in the processing chamber which is depressurized to a pressure lower than a pressure during the first step. The first step and the second step are repeated two or more times.

Abstract: A method and device for wet treatment of a plate-like article comprises a spin chuck for holding and rotating the plate-like article. Gas supply nozzles open on a surface of the spin chuck facing a first side of the plate-like article. The spin chuck is configured to direct gas discharged from the gas supply nozzles radially outwardly through a gap defined between an upper surface of the spin chuck and a downwardly facing surface of a plate-like article positioned on the spin chuck. Liquid supply nozzles open on the surface of the spin chuck facing a first side of the plate-like article and positioned radially outwardly of the gas supply nozzles. The liquid supply nozzles are positioned beneath a peripheral region of a plate-like article positioned on the spin chuck.

Abstract: An improved design for a closed chamber process module for single wafer wet processing utilizes a combination lid and gas showerhead for sealing the chamber from above. One or more media arms dispense liquid onto a wafer in the chamber. The media arms are mounted inside the chamber but are connected by a linkage that passes through the chamber wall to a drive unit mounted outside the chamber.

Abstract: Disclosed is an apparatus for wet treatment of a plate-like article, which includes: a spin chuck for holding and rotating the plate-like article including an element for holding the plate-like article at the plate-like article's edge and a gas supply element for directing gas towards the side of the plate-like article, which faces the spin chuck, wherein the gas supply element includes a gas nozzle rotating with the spin chuck, for providing a gas cushion between the plate-like article and the spin chuck; a fluid supply element for directing fluid onto the side of the plate-like article, which is facing the spin chuck, through a non-rotatable fluid nozzle.

Abstract: A substrate treatment apparatus is used for treating a major surface of a substrate with a chemical liquid. The substrate treatment apparatus includes: a substrate holding unit which holds the substrate; a chemical liquid supplying unit having a chemical liquid nozzle which supplies the chemical liquid onto the major surface of the substrate held by the substrate holding unit; a heater having an infrared lamp to be located in opposed relation to the major surface of the substrate held by the substrate holding unit to heat the chemical liquid supplied onto the major surface of the substrate by irradiation with infrared radiation emitted from the infrared lamp, the heater having a smaller diameter than the substrate; and a heater moving unit which moves the heater along the major surface of the substrate held by the substrate holding unit.

Abstract: In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.

Abstract: A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.

Abstract: A shower-type etching apparatus that includes a support member supporting a substrate in an inclined manner, a first spray member arranged at a lower end of the inclined substrate spraying a smaller amount of etching solution onto the substrate than a second spray member arranged at an upper end of the inclined substrate by increasing a pitch distance between adjacent nozzles in the first spray member as compared to the second spray member.

Abstract: In a substrate processing apparatus, provided are an upper nozzle for supplying a chemical liquid having a temperature higher than that of a substrate onto an upper surface of the substrate and a heating liquid supply nozzle for supplying a heating liquid having a temperature higher than that of the substrate onto a lower surface of the substrate. It is thereby possible to suppress or prevent a decrease in the temperature of the chemical liquid supplied on the upper surface of the substrate from a center portion of the substrate toward an outer peripheral portion thereof. In a supply nozzle, the heating liquid supply nozzle is positioned on the inner side of a heating gas supply nozzle for ejecting heating gas in drying the substrate. It is thereby possible to simplify and downsize a structure used for heating the lower surface of the substrate.

Abstract: A method and a system that include providing a localized dispensing apparatus. A substrate having a material disposed on its top surface is oriented above the localized dispensing apparatus. A chemical is then dispensed from the localized dispensing apparatus onto the top surface of the oriented substrate. The chemical removes the material. The path for the material removal may be determined and the localized dispensing apparatus programmed to provide chemical according to the path.

Abstract: In certain embodiments the metal liftoff tool comprises an immersion tank for receiving a wafer cassette with wafers therein, the immersion tank including an inner weir, a lifting and lowering mechanism capable of raising and lowering the wafer cassette while submerged in fluid in the immersion tank, low pressure high velocity primary spray jets for stripping the metal, the primary spray jets positioned at opposing sides of the immersion tank parallel to the wafer surfaces planes, and secondary spray jets for pressure equalization force, positioned at the bottom of the immersion tank. A wafer lift insert is positioned at the bottom of the immersion tank to receive and periodically lift the wafers within the cassette.

Abstract: A knife edge ring apparatus is provided for use during semiconductor manufacturing which includes a ring-shaped body having an inner side wall, an outer side wall and a top surface having a predetermined width. A multi-staged inclined portion is formed in the outer side wall and a plurality of discharge holes penetrate the body. Each of the discharge holes have an inlet associated therewith positioned at the inclined portion. The knife edge ring allows developer and cleaning solution to be discharged away from the wafer. A method of cleaning the bottom surface of a semiconductor wafer is also provided which employs the use of the knife edge ring. Developer is supplied onto the top surface of a wafer. Spraying solution is sprayed onto the bottom surface of the wafer.

Abstract: A substrate processing apparatus includes a substrate holding unit configured to hold a substrate; a first processing liquid nozzle configured to supply a first processing liquid to a peripheral portion of the substrate; a second processing liquid nozzle configured to supply a second processing liquid, the temperature of which is lower than that of the first processing liquid, to the peripheral portion of the substrate; a first gas supply port configured to supply a first gas at a first temperature to a first gas supplied place on the peripheral portion of the substrate; and a second gas supply port configured to supply a second gas at a second temperature lower than the first temperature to a place closer to the center in the radial direction as compared to the first gas supplied place with respect to the substrate.

Abstract: Disclosed is an apparatus for wet treatment of a disc-like article, which comprises: a spin chuck for holding and rotating the disc-like article, and an inner edge nozzle dispensing treatment liquid directed towards a first peripheral region of the first surface of the disc-like article, wherein the first surface is facing the spin chuck and the first peripheral region is defined as being a region of the first surface with an inner radius (ri), which is greater than 1 cm less than the disc-like article's radius (ra), wherein the inner edge nozzle is positioned in a stationary manner between the disc-like article (when placed on the spin chuck) and the spin chuck, wherein the inner edge nozzle is feed through a central pipe, which is disposed in a stationary manner and penetrates centrally through the spin chuck, for supplying a treatment liquid against a first surface of the disc-like article.

Abstract: An apparatus and method for processing wafer-shaped articles utilizes at least first and second liquid-dispensing nozzles, wherein a first liquid-dispensing nozzle is positioned closer to an axis of rotation than the second liquid-dispensing nozzle. A liquid supply system supplies heated process liquid to the nozzles such that process liquid dispensed from the first nozzle has a temperature that differs by an amount within a predetermined range from a temperature of process liquid dispensed from the second liquid-dispensing nozzle.

Abstract: A wet chemical processing method and apparatus for use in semiconductor manufacturing and in other applications, is provided. The method and apparatus provide for energizing a processing liquid such as a cleaning or etching liquid using ultrasonic, megasonic or other energy waves or by combining the liquid with a pressurized gas to form a pressurized spray, or using both. The energized, pressurized fluid is directed to a substrate surface using a fluid delivery system and overcomes any surface tensions associated with liquids, solids, or air and enables the processing liquid to completely fill any holes such as contact holes, via holes or trenches, formed on the semiconductor substrate.

Abstract: Provided are an injection head, and a substrate treatment apparatus and method using the same. The substrate treatment apparatus includes a rotatable spin head supporting a substrate, an injection head installed on the spin head to supply a fluid to a bottom surface of the substrate supported on the spin head, and a fluid supply unit supplying the fluid to the injection head.

Abstract: Stripping structure strips insulation from ends of a plurality of leads of a lead bundle. Each lead includes a conductor member coated with the insulation. The structure includes a housing having wall structure defining a stripping chamber, an inlet in fluid communication with the stripping chamber, and an outlet in fluid communication with the stripping chamber. A cover has an opening for receiving an end of the lead bundle in a sealing manner so that the leads thereof are received in the stripping chamber. Chemical stripping solution is in communication with the inlet. When the lead bundle is received through the opening with the leads in the stripping chamber and when the chemical stripping solution is provided though inlet and in the stripping chamber, the chemical stripping solution strips the insulation from the conductor members, with the stripping solution along with stripped insulation exiting through the outlet.

Abstract: A method of depositing an imprintable medium onto a target area of a substrate for imprint lithography is disclosed. The method includes moving the substrate, a print head comprising a nozzle to eject an imprintable medium onto the substrate, or both, relative to the other in a first direction across the target area while ejecting a first series of droplets of imprintable medium onto the substrate and moving the substrate, the print head, or both, relative to the other in a second opposing direction across the target area while ejecting a second series of droplets of imprintable medium onto the substrate on or adjacent to droplets from the first series of droplets.

Abstract: A liquid processing apparatus supplies a processing liquid from a nozzle formed on an irrotational member to a substrate while the substrate is rotated horizontally, with a back surface of the substrate facing downward. The liquid processing apparatus prevents droplets from remaining on the member. The liquid processing apparatus includes a nozzle member irrotationally provided below the substrate. The nozzle member includes a processing-liquid discharge nozzle to discharge the processing liquid and a gas discharge nozzle to discharge drying gas on a top surface of the nozzle member. The processing-liquid discharge nozzle includes a processing-liquid discharge port to discharge the processing liquid toward the substrate. The gas discharge nozzle includes a first gas discharge port to discharge the drying gas toward the substrate, and a plurality of second gas discharge ports to discharge the drying gas in a radial direction along the top surface of the nozzle member.

Abstract: In a method for manufacturing a printed circuit board, a substrate, including a number of plated through holes (PTHs) is provided. Each of the PTHs has an electrically conductive layer plated on its inner wall and includes an electrically connecting portion and a stub. A protective layer is formed on a surface of the substrate adjacent to the stub. An etching device, including an upper plate and a number of spray tubes corresponding to the PTHs, is provided. Each of the spray tubes includes a protruding portion beyond the upper plate. The substrate is arranged in such a manner that the protective layer is in contact with the upper plate and the protruding portions are received in the stubs. After that, the protruding portions spray an etchant to etch and remove the electrically conductive layer of the stubs, and the protective layer is removed.

Abstract: An apparatus includes at least two tanks, at least two pumps, at least one nozzle, and a chuck. The apparatus provides multiple developers with different polarities during a developing process to target portions of a latent resist profile having different polarities, and thus different solubility. This apparatus also allows a mixture of two developers to be used for the resist film developing. A polarity of the mixture is adjustable by controlling a ratio of one pump flow rate to another pump flow rate and further controlling the resist pattern profile.

Abstract: Methods and apparatus for isotropically etching a metal from a work piece, while recovering and reconstituting the chemical etchant are described. Various embodiments include apparatus and methods for etching where the recovered and reconstituted etchant is reused in a continuous loop recirculation scheme. Steady state conditions can be achieved where these processes are repeated over and over with occasional bleed and feed to replenish reagents and/or adjust parameters such as pH, ionic strength, salinity and the like.

Abstract: Surface Treat and Survey Metallurgy Substrates Renewable Substances Food Starch, Sodium and Electrolyte Precision Media Systems are a closed-type precision media system. The aqueous slurry type system pumps aqueous slurry Electrolyte from an aqueous slurry pump. The differential pressurized variable control regulation closed-type system utilizes negative pressurized air drawing media from a powerful control valve or control valve venturi and vacuum pump. The Surface Treat and Survey Metallurgy Substrates Renewable Substances Food Starch, Sodium and Electrolyte Precision Media Systems are light and easy to operate opening the door to whole new market of customers to safely perform paint stripping, substrate treatment, parts treatment and cleaning specifications.

Abstract: A supplying device including a supplying part and an adjustment part is provided. The supplying part includes a run-through supplying path for transporting a fluid. The adjustment part includes a channel and one or more recovery paths adjacent to the channel. The supplying part is disposed in the channel to allow the fluid to flow out of the channel through the supplying part and to allow the recovery paths to suck a portion of the etching solution outputted from the channel in order to control the amount of output of the fluid. Wet-etching equipment including the supplying device is also provided.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: A wet etching method that includes forming an insulating film on a substrate, and irradiating laser light to the insulating film during wet etching of the insulating film using an etching solution.

Abstract: An exemplary wet processing apparatus includes a tank, a conveyor configured for conveying a substrate, and a spraying system. The tank receives a wet processing liquid. The conveyor includes a first conveying portion, a second conveying portion, and a third conveying portion. The first conveying portion is in the tank and conveys the substrate in the wet processing liquid. The second conveying portion is obliquely interconnected between the first and third conveying portions. The third conveying portion conveys the substrate above the wet processing liquid in the tank. The spraying system is above the third conveying portion, sprays the wet processing liquid onto the substrate on the third conveying portion.