Abstract: The present invention relates to a method and an arrangement for restoring strength and wear resistant of a metallic matrix ceramic (1) comprising a metallic binder (2) and ceramic filler (3) particles, which metallic matrix ceramic (1) has been exposed for long term high temperature and pressure cycling, for example in a gas exhaust nozzle (6), whereby micro cracks (4) are developed in the outer layer (5) of the metallic binder (2) According to the invention this is achieved by virtue of the fact that the outer layer (5) of the metallic binder (2), partly or fully, is removed from the MMC part (1) by a chemical operation, where after the outer layer (5) is compressed by a compression operation for achieving a dense outer layer (5), in which filler (3) particles are close to each other.

Abstract: Disclosed is an apparatus for wet treatment of a plate-like article, which includes: a spin chuck for holding and rotating the plate-like article including an element for holding the plate-like article at the plate-like article's edge and a gas supply element for directing gas towards the side of the plate-like article, which faces the spin chuck, wherein the gas supply element includes a gas nozzle rotating with the spin chuck, for providing a gas cushion between the plate-like article and the spin chuck; a fluid supply element for directing fluid onto the side of the plate-like article, which is facing the spin chuck, through a non-rotatable fluid nozzle.

Abstract: Disclosed is a liquid processing apparatus to perform liquid processing by supplying a processing liquid from a nozzle formed on an irrotational member to a substrate while the substrate is rotated horizontally in a state where a back surface of the substrate faces downward. The liquid processing apparatus prevents droplets from remaining on the member. The liquid processing apparatus includes a nozzle member irrotationally provided below the substrate. The nozzle member includes a processing-liquid discharge nozzle to discharge the processing liquid and a gas discharge nozzle to discharge drying gas on a top surface of the nozzle member. The processing-liquid discharge nozzle includes a processing-liquid discharge port to discharge the processing liquid toward the substrate.

Abstract: Disclosed is an apparatus for wet treatment of a disc-like article, which comprises: a spin chuck for holding and rotating the disc-like article, and an inner edge nozzle dispensing treatment liquid directed towards a first peripheral region of the first surface of the disc-like article, wherein the first surface is facing the spin chuck and the first peripheral region is defined as being a region of the first surface with an inner radius (ri), which is greater than 1 cm less than the disc-like article's radius (ra), wherein the inner edge nozzle is positioned in a stationary manner between the disc-like article (when placed on the spin chuck) and the spin chuck, wherein the inner edge nozzle is feed through a central pipe, which is disposed in a stationary manner and penetrates centrally through the spin chuck, for supplying a treatment liquid against a first surface of the disc-like article.

Abstract: Disclosed is a substrate processing apparatus to improve the etching uniformity when a back surface of a substrate is etched with a high-temperature chemical liquid. The chemical-liquid processing apparatus removes a film formed on a substrate by etching with a high-temperature chemical liquid. The apparatus includes a substrate holding mechanism to hold the substrate horizontally in a state where a back surface of the substrate faces downward, a rotating mechanism to rotate the substrate holding mechanism by a hollow rotating shaft extending vertically, a chemical-liquid discharge nozzle to supply the high-temperature chemical liquid to the back surface of the substrate by discharging the high-temperature chemical liquid upwardly, and a chemical-liquid supply mechanism to supply the chemical liquid to the chemical-liquid discharge nozzle.

Abstract: An apparatus (100) for spraying an etchant solution on a preformed printed circuit board (30) includes a number of feed pipes (40) for supplying the etchant solution and a number of nozzles (45) mounted on the feed pipes. Each of the feed pipes has a middle portion (402) and two end portions (401). The middle portions of the feed pipes are located on a first plane and the end portions of the feed pipes are located on a second plane parallel to the first plane. The number of nozzles are mounted on the middle portion and the two end portions of each feed pipe. The number of nozzles are in fluid communication with the feed pipes.

Abstract: An apparatus for dispensing fluid during semiconductor substrate processing operations comprises an enclosure having a first side and a second side. The enclosure comprises a first processing station and a second processing station. The second processing station is positioned adjacent to the first processing station. In addition, the substrate processing apparatus includes a first dispense arm configured to deliver a fluid to the first processing station wherein the first dispense arm is positioned between the first side and the first processing station and a second dispense arm configured to deliver the fluid to the second processing station wherein the second dispense arm is positioned between the second side and the second processing station. The substrate processing apparatus also comprises a first rinse arm configured to deliver a rinsing fluid to the first processing station and a second rinse arm configured to deliver the rinsing fluid to the second processing station.

Abstract: Provided is a substrate treatment apparatus that treats a surface of a substrate while rotating the substrate. The substrate treatment apparatus includes: a physical tool unit including a physical tool configured to treat the surface of the substrate; a nozzle unit including a liquid supply nozzle configured to supply a liquid to the surface of the substrate and a gas supply nozzle configured to supply a gas to the surface of the substrate; a physical-tool-unit moving mechanism configured to move the physical tool unit along the surface of the substrate; and a nozzle-unit moving mechanism configured to move the nozzle unit along the surface of the substrate.

Abstract: Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.

Abstract: An apparatus for texturing two-sided wafers has a body capable of containing texturing chemistry (i.e., not necessarily containing the chemistry at this time), and a transport mechanism for transporting wafers through the texturing chemistry. The transport mechanism is configured to substantially wet no more than one side of wafers, transported through the body, with texturing chemistry.

Abstract: [Problems] A processing apparatus and a processing method that shorten a lead time and are more reliable than before in respect of the processing performance are provided. [Means for Solving Problems] The processing apparatus has a chamber, a retaining means provided in the chamber for retaining a workpiece, an active atom supplying means for supplying an active atom into the chamber, and a chemical supplying means for supplying a chemical into the chamber. For the surface of the workpiece, dry processing by the active atom supplied from the active atom supplying means and wet processing by the chemical supplied from the chemical supplying means are performed.

Abstract: A process of stripping a coating according to the invention comprises subjecting a coated substrate to an aqueous medium containing a peroxide and an interfacial mixing agent, and to heating preferably by either ultraviolet (UV) and/or infrared (IR) radiation. The substrate is completely stripped of the coating and suffers no damage to itself as a result of the paint debonding/dislodging process. No toxic wastes are generated from this process, nor are particulates associated with air pollution generated. The metal substrates being stripped also do not undergo corrosion or other damage as a result of the described process.

Abstract: A method of removing materials, and preferably photoresist, from a substrate comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 90° C., either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 90° C., the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material.

Abstract: Provided is a method for performing etching process or film forming process to a substrate W whereupon a prescribed pattern is formed with an opening. The method is provided with a step of mixing a liquid and a gas, at least one of which contains a component that contributes to the etching process or the film forming process, and generating charged nano-bubbles 85 having a diameter smaller than that of the opening formed on the semiconductor substrate W; a step of forming an electric field to attract the nano-bubbles onto the surface of the substrate W; and a step of performing the process by supplying the substrate with the liquid containing the nano-bubbles 85 while forming the electric field.

Abstract: Provided is a substrate treating method for selectively etching a surface of a substrate. In the substrate treating method, an etchant is supplied to a center portion of a rotating substrate through a first nozzle, and an etch prevention fluid is supplied through a second nozzle disposed at a predetermined position apart from the center portion of the substrate so as to dilute the etchant.

Abstract: An exemplary system for processing a workpiece comprises a conveyor, a first liquid spraying device, a second liquid spraying device, and a substrate positioning device. The conveyor is configured for conveying the workpiece along a conveying direction. The first and second liquid spraying devices for spraying liquid onto the workpiece transported on the conveyor face the conveyor and are arranged along the conveying direction. The substrate positioning device for reorienting the workpiece on the conveyor is installed between the first and second liquid spraying devices and faces the conveyor.

Abstract: A semiconductor apparatus for processing a wafer comprises a stage, a fluid supply unit, and a cleaning unit. The stage supports the wafer. The fluid supply unit provides a first fluid, wherein the fluid supply unit is moveable between a second position and a first position. The cleaning unit provides a second fluid, wherein when the fluid supply unit is in the first position, the fluid supply unit provides the first fluid toward the wafer, and when the fluid supply unit is in the second position, the cleaning unit blows the second fluid toward a surface of the fluid supply unit to clean the surface thereof.

Abstract: An apparatus for processing a substrate is provided which includes a first process window configured to apply a first fluid meniscus between the first process window and a surface of the substrate. The apparatus further includes a second process window configured to generate a second fluid meniscus between the second process window and the surface of the substrate. The apparatus further includes a third process window configured to generate a third fluid meniscus between the third process window and the surface of the substrate. The apparatus is configured to apply the first fluid meniscus, the second fluid meniscus, and the third fluid meniscus to the surface of the substrate in order during an atomic layer deposition operation.

Abstract: A discharge hole of a lower nozzle is directed at an angle of 5 degrees to 40 degrees slanting inward with respect to a normal to the upper surface of a bottom plate. Thus, the flow pressure of a processing solution discharged through the discharge hole is not excessively reduced. Further, a circulation area of the processing solution does not expand widely in an inner bath. As a result, the processing solution in the inner bath is effectively displaced while the processing solution smoothly flows into gaps between substrates.

Abstract: A processing system includes a plurality of chucks, each of the chucks configured to support a substrate such that a bottom surface of the substrate is exposed, a track configured to guide the plurality of chucks along a continuous path, and a processing arrangement configured to process the bottom surface of each substrate when the track guides the respective chuck over the processing arrangement, the processing arrangement including a fluid meniscus arranged to contact the bottom surface of each substrate when the track guides the respective chuck over the processing arrangement.

Abstract: The substrate treatment apparatus according to the present invention includes a substrate holding mechanism which holds a substrate, a nozzle body having a spout which spouts an etching liquid toward a major surface of the substrate held by the substrate holding mechanism, a nozzle body movement mechanism which moves the nozzle body in a predetermined movement direction so as to move an etching liquid application position at which the etching liquid is applied on the major surface, a first flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on one of opposite sides of the etching liquid application position with respect to the movement direction, and a second flexible sheet attached to the nozzle body to be brought into contact with a portion of the major surface located on the other side of the etching liquid application position with respect to the movement direction.

Abstract: In a method for wet-chemical treatment of surfaces of a material. a pulse-like spray jet of treatment fluid is directed against the surface of the material. This causes a pronounced impact action against the base of a structure to be processed so that the amount of treatment time which is necessary is substantially reduced. The pressure-free and accelerated outflow of the treatment fluid from the structure channels in the pauses between pulses results in the flanks of the structures or circuit-board conductors being subjected to less wet-chemical processing than in the prior art. In case of chemical etching the result is a smaller undercutting.

Abstract: A semiconductor device manufacturing apparatus is disclosed. The semiconductor device manufacturing apparatus applies a process to a semiconductor wafer by supplying a vapor of a corrosive liquid source to a processing container. An electrode is immersed in a storing container which stores the corrosive liquid source. The main material of the electrode is a metal whose ionization tendency is less than that of a metal of the storing container, and a protection current is applied between them by a DC power source. Or another electrode is used. The main material of the electrode is a metal whose ionization tendency is greater than that of the metal of the storing container and the metal of the electrode does not damage the semiconductor wafer. A protection current is applied between the storing container and the electrode by utilizing the difference of the ionization tendency between them.

Abstract: A system and method for performing high flow rate dispensation of a chemical onto a photolithographic component are disclosed. The system and method includes providing a photolithographic component in a manufacturing tool. The photolithographic is positioned at a predetermined distance from a nozzle dispensing a chemical. Dispensation of a chemical at a high flow rate onto a photolithographic component, the rate of flow operable to reduce harmful effects from occurring on the surface of the photolithographic substrate.

Abstract: A solvent vapor is made to adhere efficiently to the surface of a resist pattern without using an ultraviolet irradiation process to improve processing accuracy, to reduce processing time and to suppress the diffusion of the solvent outside a substrate processing system. The surface of a resist pattern R formed on a semiconductor wafer W by an exposure process and a developing process is coated with water molecules m. A solvent vapor of a water-soluble solvent, such as NMP, is spouted on the surface of the resist pattern R coated with the water molecules m. A surface layer of the resist pattern R is swollen by the solvent vapor combined with the water molecules m to achieve a smoothing process. The water molecules m and the solvent s remaining on the resist pattern R on the wafer W after the smoothing process are removed by drying.

Abstract: The present invention provides a substrate processing apparatus for processing substrates by immersing the substrates in a processing liquid. This substrate processing apparatus includes a processing tank having a pair of side walls arranged to be opposed to each other; and a pair of processing-liquid supply mechanisms provided respectively corresponding to the pair of side walls. The pair of processing-liquid supply mechanisms are respectively configured for supplying the processing liquid toward a central portion of the processing tank in the width direction connecting the pair of side walls, thereby to create a rising flow of the processing liquid in a central area in the width direction of the processing tank. Each inner wall face of the pair of side walls includes a main body, a projecting portion located above the main body, and a discharge guide portion located uppermost and providing a discharge port configured for allowing the processing liquid to overflow.

Abstract: In a spin unit for rotating a substrate and a method of processing the substrate, the substrate is secured on a support and is rotated on the support. Processing materials including drying gases, etching solutions and cleaning solutions are selectively supplied onto a bottom surface of the rotating substrate. The same processing materials are also selectively supplied onto a top surface of the substrate. The top and bottom surfaces of the substrate are simultaneously processed by simultaneous supply of the processing materials through the first and second sub-injectors.

Abstract: An etching apparatus of a glass substrate for a flat panel display includes an etching chamber configured to receive a jig, glass substrates disposed on the jig, a holding member connected to the jig to hold the glass substrates, a transferring line connected to the jig to transfer the jig into the etching chamber, and a spray member which sprays an etchant onto surfaces of the glass substrates. A spray pressure of the etchant is equal to or greater than approximately 0.1 kg/cm2 and is less than approximately 0.5 kg/cm2.

Abstract: A substrate etching apparatus includes a chamber in which first and second insulating substrates are received, a blocking shutter, and a first spray head. The first spray head is arranged in the chamber and sprays an etchant toward the first insulating substrate. The blocking shutter surrounds end portions of the first and second substrates and isolates a first area in which the first insulating substrate is positioned from a second area in which the second insulating substrate is positioned.

Abstract: A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.

Abstract: A plating method of a negative electrode can of a flat alkaline cell and a plating apparatus thereof are provided, by which a plated-coating layer can be formed only in a concave of the negative electrode can, a plating liquid is not uselessly consumed, and an inner face of the negative-electrode-can can be washed with a small amount of washing liquid. An electroless plating liquid is filled into the concave of the negative electrode can so as to form a plated-coating layer on an inner face of the concave. The electroless plating liquid is recovered from the concave of the negative electrode can, then a washing liquid is filled into the concave to wash the inner face of the concave. Then, the washing liquid is recovered from the concave of the negative electrode can, and then air is filled into the concave to dry the inner face of the concave.

Abstract: Certain embodiments are directed to methods, devices and systems designed to remove selected portions of a material to expose an underlying material or substrate. One or more electrical components may be coupled to the underlying substrate through an electrical contact. Kits and systems for producing electrical contacts are also provided.

Abstract: In an inventive resist removing method, sulfuric acid and hydrogen peroxide water are supplied to a surface of a substrate to remove a resist from the substrate surface. Thereafter, hydrogen peroxide water is supplied to the substrate surface to remove the sulfuric acid from the substrate surface.

Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.

Abstract: A liquid processing apparatus includes containers 26, 27, 26a, 26b surrounding processing chambers 51, 52 for accommodating a plurality of wafers W and nozzles 54, 56 for supplying a processing liquid to the substrates W in order to perform a liquid process. The nozzles 54, 56 are respectively equipped with a plurality of ejecting orifices 53, 55 capable of ejecting the processing liquid in a plane manner, allowing the substrates W to be processed uniformly and effectively.

Abstract: An etching apparatus for forming conductor patterns by etching a wiring board is provided. The etching apparatus includes a drum, a chamber and a nozzle head. The drum is configured to run a flexible wiring board under rotation while turning it around a drum face. The chamber is a chamber for storing an etching liquid under a constant pressure. The nozzle head is arranged at a position in the vicinity of the drum face in an upper portion of the chamber. The etching liquid pressurized in the chamber is linearly ejected onto the drum face through the nozzle holes.

Abstract: The substrate processing apparatus has substrate holding mechanisms (14) for holding the substrate (W) under a holding force which is changed according to a rotational speed of the substrate holding mechanisms (14), a substrate rotation mechanism (22) for rotating the substrate holding mechanisms (14) to rotate the substrate (W) held by the substrate holding mechanisms (14), and a treatment liquid supply mechanism (12, 15, 19) for supplying a treatment liquid to a desired portion of the substrate (W) held by the substrate holding mechanisms (14).

Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.

Abstract: A substrate processing apparatus of the invention includes: a substrate holding unit that holds a substrate almost in a horizontal posture; a rotating unit that rotates the substrate held by the substrate holding unit about a vertical shaft line; and an etching liquid nozzle disposed oppositely to a bottom surface of the substrate held by the substrate holding unit and having plural discharge ports each having a different distance from a rotation center of the substrate rotated by the rotating unit so as to discharge an etching liquid toward the bottom surface of the substrate rotated by the rotating unit from the plural discharge ports.

Abstract: The substrate processing apparatus includes a first etching mode and a second etching mode. In the first etching mode, a first nozzle is positioned at a first processing position and a chemical solution is supplied from the first nozzle to a top rim portion of the rotating substrate. In the second etching mode, a second nozzle is positioned at a second processing position and DIW is supplied to the top rim portion to which the chemical solution adheres, while the chemical solution is supplied from the first nozzle positioned at the first processing position to the top rim portion of the rotating substrate. The etching mode is selectively switched between the two etching modes in accordance with a property of the thin film adhering to the substrate.

Abstract: Disclosed herein is a high-frequency induction plasma reactor apparatus for producing nano-powder, which is configured to continuously manufacture nano-powder in large quantities using solid-phase powder as a starting raw material and to manufacture high-purity nano-powder by completely vaporizing the material powder. The high-frequency induction plasma reactor apparatus comprises an upper body and a cover. The upper body is provided with a reaction pipe receiving a reactor extending vertically inside thereof, a high-frequency coil surrounding the outer periphery of the reaction pipe and a ceramic inner wall provided inside the reaction pipe. The ceramic inner wall is formed with a plurality of gas passing bores and defines a gas movement passage with the inner side wall of the reaction pipe therebetween for allowing the inflow of argon gas from the outside into the reactor. The cover is mounted to the upper end of the reactor and adapted to seal the reactor.

Abstract: The present is directed to an apparatus for etching the top edge and bottom of a wafer. The apparatus includes a substrate support part for supporting a wafer and a movable protect part for preventing fluid for an etch from flowing into a non-etch portion of the wafer. The top edge and bottom of the wafer is etched by a wet etch, and a boundary of the non-etch portion and the edge of the wafer is etched by a dry etch.

Abstract: A liquid processing apparatus includes containers 26, 27, 26a, 26b surrounding processing chambers 51, 52 for accommodating a plurality of wafers W and nozzles 54, 56 for supplying a processing liquid to the substrates W in order to perform a liquid process. The nozzles 54, 56 are respectively equipped with a plurality of ejecting orifices 53, 55 capable of ejecting the processing liquid in a plane manner, allowing the substrates W to be processed uniformly and effectively.

Abstract: A method for moving resist stripper across the surface of a semiconductor substrate that includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor substrate. A carrier fluid, such as a gas, is then directed toward the semiconductor substrate so as to move the resist stripper across the substrate. The carrier fluid may be directed toward the substrate as the resist stripper is being applied thereto or following application of the resist stripper. A system for effecting the method is also disclosed.

Abstract: A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

Abstract: A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

Abstract: An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area.

Abstract: In a manufacturing apparatus of printed wiring board an aperture of a nozzle pipe located in a central position is larger than that at both sides, or the aperture of the piping to the nozzle pipe in the central position is larger than that of the piping at both sides. The mutual interval is narrower with the central nozzle pipes. The interval of the individual nozzle pipes is variable, and is also variable in the vertical direction. A pressure-proof flexible tube is provided between each nozzle pipe and the pump, and the interval of the individual nozzle pipes is variable, and is also variable in the vertical direction. Further, the spray pressure, oscillating angle, and oscillating speed can be set individually in each nozzle pipe, and such setting can be automated.

Abstract: A method and apparatus for improving an operating efficiency for a process including temperature dependent fluid delivery including determining a projected time period to start a process during a non-operating time period; delivering a process fluid for performing the process along at least one fluid recirculation pathway for at least one selected time period the at least one fluid recirculation pathway including a substantial portion of a fluid delivery pathway for providing the process fluid to the process at a predetermined process temperature; and, providing the process fluid following the at least one selected time period to the process at the predetermined process temperature.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.