Abstract: Semiconductor chamber components are described herein that includes one or more conduits for carrying a fluid between powered and grounded portions of the chamber component, the conduit configure to be less prone to arcing as compared to conventional components. In one example, a semiconductor chamber component is provided that includes a powered region, a grounded region, and a fluid conduit. The fluid conduit is disposed within the semiconductor chamber component and passes through the powered and grounded regions. The fluid conduit has an end to end electrical resistance of between 0.1 to 100 M?.

Abstract: According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate to a first temperature while supporting the substrate on a substrate support, and supplying a process gas into a process vessel accommodating the substrate support; (b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying an inert gas or air to a coolant flow path provided in the process vessel after (a) for a predetermined time, wherein defects occur when a cleaning gas is supplied to the low temperature structure at the first temperature; and (c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b).

Abstract: A substrate processing apparatus includes a stage, a light source, an optical assembly, a light receiver, and controller circuitry. The stage includes a first placing surface on which a substrate is to be placed, and a second placing surface that surrounds the first placing surface and on which a focus ring is to be placed. The optical assembly focuses light from the light source on a lower surface position, which is a position of a lower surface of the focus ring placed on the second placing surface. The light receiver receives light from the lower surface position. The controller circuitry detects at least one of a presence and an absence of the focus ring on the second placing surface, based on light received by the light receiver.

Abstract: Embodiments described herein provide a backside gas delivery assembly that prevents inert gas from forming parasitic plasma. The backside gas delivery assembly includes a first gas channel disposed in a stem of a substrate support assembly. The substrate support assembly includes a substrate support having a second gas channel extending from the first gas channel. The backside gas delivery assembly further includes a porous plug disposed within the first gas channel positioned at an interface of the stem and the substrate support, a gas source connected to the first gas channel configured to deliver an inert gas to a backside surface of a substrate disposed on an upper surface of the substrate support, and a gas tube in the first gas channel extending to the porous plug positioned at the interface of the stem and the substrate support.

Abstract: A device for determining the partial pressure or concentration of a vapor in a volume includes a sensor element that can be caused to oscillate and temperature-controlled to a temperature below the condensation temperature of the vapor. The sensor element has an oscillation frequency that is influenced by a mass accumulation formed by condensed vapor on the sensor surface thereof. The rear side of the sensor element pointing away from the sensor surface contacts a thermal transfer surface of a thermal transfer element. The thermal transfer element is formed from an electrically heatable heating element that is connected to a cooling element in a thermally conductive manner by a thermal dissipation surface, which is different from the thermal transfer surface. The thermal transfer surface extends substantially parallel to the thermal dissipation surface.

Abstract: An electrostatic chuck includes a base plate and a ceramic dielectric substrate. The ceramic dielectric substrate has a first major surface. The first major surface includes at least a first region and a second region. At least one first gas introduction hole is connected to at least one of multiple first grooves. At least one second groove are provided in the first region. The multiple first grooves have substantially circular planar configurations and are provided concentrically. The second groove is connected to at least two of the first grooves. When projected onto a plane perpendicular to a first direction from the base plate toward the ceramic dielectric substrate, at least a portion of the first gas introduction hole overlaps at least one of the first groove or the second groove at a portion where the first groove and the second groove are connected.

Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

Abstract: Apparatus for processing an object includes a cavity for receiving therein the object. A plurality of processing antennas are configured to coherently feed the cavity with RF radiation generated by a processing RF source. A memory stores processing instructions for each object from a given group of objects. A user interface is configured to receive identification of an object to be processed from a user. A processor is configured to receive from the interface indication of the identification of the object, select a processing instruction based on the indication, and control the processing RF source to radiate according to the selected processing instruction. The energy processing instruction includes a plurality of excitation setups, each excitation setup of said plurality of excitation setups including amplitudes, each of which is associated with one of the plurality of antennas, and one or more phase differences associated with each two antennas associated with non-zero amplitudes.

Abstract: A film quality of a film formed on a substrate is improved. A plasma atomic layer deposition apparatus has a lower electrode holding the substrate, and an upper electrode having an opposite surface opposed to the lower electrode and generating plasma discharge between the upper electrode and the lower electrode. Further, the plasma atomic layer deposition apparatus has a conductive deposition preventing member fixed to the opposite surface of the upper electrode by a plurality of screws, and other conductive deposition preventing member fixed to the conductive deposition preventing member by a plurality of others screws. At this time, in a plan view, the plurality of screws and the plurality of other screws are arranged so as not to overlap each other.

Abstract: A cooling system configured to circulate a coolant under a placing surface of a placing table includes a heat exchange unit within the placing table and configured to perform a heat exchange by the coolant via the placing surface; a chiller unit connected to the heat exchange unit. The heat exchange unit comprises a reservoir chamber configured to store the coolant; and an evaporation chamber configured to evaporate the coolant stored in the reservoir chamber. The reservoir chamber is connected to the chiller unit and communicates with the evaporation chamber. The evaporation chamber is connected to the chiller unit, extended along the placing surface and includes discharge holes. The discharge holes are arranged such that the coolant is discharged toward a heat transfer wall as a placing surface-side inner wall of the evaporation chamber. The discharge holes are dispersed within the placing surface.

Abstract: A plasma processing apparatus includes: a shower head including a ceiling plate having a plurality of gas holes, and a base member having a space so as to supply the processing gas to the plurality of gas holes; a temperature adjustment mechanism provided in the shower head; an acquisition unit configured to acquire a combination of a plasma parameter and pressure in the space in the base member; an estimation unit configured to estimate temperature of the ceiling plate corresponding to the acquired combination of the parameter and the pressure with reference to temperature information indicating the temperature of the ceiling plate corresponding to the combination of the parameter and the pressure; and a temperature controller configured to control the temperature adjustment mechanism such that the estimated temperature of the ceiling plate becomes target temperature when a plasma processing is performed.

Abstract: A substrate support includes a plate comprising a top surface and a bottom surface, wherein the top surface is to support a substrate. The plate further comprises an electrode, one or more resistive heating elements, a first plurality of channels, and a plurality of optical fibers in the first plurality of channels, wherein the plurality of optical fibers are removable from the substrate support.

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

Abstract: A cleaning method for cleaning a processing apparatus including a processing container, a mounting stage configured to mount an object to be processed inside the processing container, an edge ring disposed at a peripheral edge portion of the mounting stage, a gas supply unit configured to supply a gas into an inside of the processing container, and a direct current power source configured to apply a direct voltage to the edge ring, and an exhaust unit configured to exhaust the inside of the processing container includes a first process of exhausting the gas inside the processing container by the exhaust unit while the gas is supplied into the inside of the processing container by the gas supply unit at least predetermined flow rate, and a second process of applying a predetermined direct voltage to the edge ring by the direct current power source.

Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.

Abstract: A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.

Abstract: A mounting table includes a base member, having a rear surface and a front surface facing the rear surface, in which a coolant path is formed, a groove portion having a bottom surface within the base member being annularly formed on the front surface, the base member being divided into a cylindrical inner base member portion positioned at an inner side of the groove portion and an annular outer base member portion positioned at an outer side of the groove portion by the groove portion; an annular focus ring supported by the outer base member portion, the annular focus ring having, at an inner side surface thereof, a protrusion that is protruded radially and inwardly to cover the groove portion; a first heat transfer member provided between the mounting surface and the coolant path; and a second heat transfer member provided between the focus ring and the coolant path.

Abstract: A temperature controller for a substrate support in a substrate processing system includes a power parameter module configured to calculate a power parameter indicative of power supplied to the substrate support. A coolant temperature parameter module configured to calculate a coolant temperature parameter indicative of a temperature of a coolant supplied to the substrate support. A heat transfer gas parameter module is configured to calculate a heat transfer gas parameter indicative of flow rates of a heat transfer gas supplied to the substrate support. A temperature calculation module is configured to calculate a temperature of the substrate support using the power parameter, the coolant temperature parameter, and the heat transfer gas parameter.

Abstract: Apparatuses and methods are provided for manufacturing diamond electronic devices. The apparatus includes a base comprising a water-block and a cover that at least partially covers the water-block. The apparatus includes a sample stage disposed on the base. The apparatus further includes a sample holder disposed on the sample stage and configured to accept a diamond substrate. The apparatus includes controlled thermal interfaces between water-block, sample stage, sample holder and diamond substrate.

Abstract: A processing apparatus has a pedestal which includes an electrostatic chuck and a cooling table. A plurality of heat transfer spaces are provided between the electrostatic chuck and the cooling table. The plurality of heat transfer spaces are coaxially provided with respect to the center axis of the electrostatic chuck and are separated from each other. The processing apparatus further includes a piping system. The piping system is configured to selectively connect each of the plurality of heat transfer spaces to a chiller unit, a source of a heat transfer gas, and an exhaust device.

Abstract: Embodiments include processing equipment. A processing system having an optical temperature measurement subsystem is described. In an example, the optical temperature measurement subsystem includes a light source to direct an excitation light into a process chamber, and a photosensitive array to detect a response light received from the process chamber. The detected light can be monitored to determine a temperature of a substrate mounted within the process chamber. Other embodiments are also described and claimed.

Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and a heater plate. The ceramic dielectric substrate has a surface where a processing object is placed. The base plate supports the ceramic dielectric substrate. The heater plate is provided between the ceramic dielectric substrate and the base plate. The heater plate includes a first support plate including a metal, a second support plate including a metal, a heater element, a first resin layer, and a second resin layer. The heater element is provided between the first support plate and the second support plate. The heater element emits heat due to a current flowing. The first resin layer is provided between the first support plate and the heater element. The second resin layer is provided between the second support plate and the heater element.

Abstract: A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level of another RF generator. Another interface receives a temperature signal indicating a temperature of a substrate support. The compensation controller generates a compensation value based on a bias feed-forward transfer function and the bias RF power level and another compensation value based on a plasma feed-forward transfer function and the plasma RF power level. A summer generates an error signal based on a set point and the temperature. The second controller generates a control signal based on the error signal. Another summer controls an actuator to adjust the temperature based on the compensation values and the control signal.

Abstract: A mounting table includes a cooling table, a power feed body, an electrostatic chuck, a first elastic member and a clamping member. The power feed body is connected to the cooling table to transmit a high frequency power. A base of the electrostatic chuck has conductivity. An attraction unit has an attraction electrode and a heater therein, and is fastened to the base by metal bonding. The first elastic member is provided between the cooling table and the base to allow the electrostatic chuck to be spaced apart from the cooling table. The first elastic member forms, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied. The clamping member is contacted with the cooling table and the base, and allows the base and the first elastic member to be interposed between the cooling table and the clamping member.

Abstract: A liquid treatment apparatus comprises: a first tank in which a first gas containing nitrogen and oxygen and a liquid are stored; a plasma generating apparatus, including a first electrode and a second electrode, which effects discharge between the first electrode and the second electrode and thereby generates plasma that makes contact with at least part of the liquid; and a gas supply apparatus that supplies a first part of the first gas from the first tank to the plasma generating apparatus.

Abstract: Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional second adjacent process chamber. The start time of the subject process chamber is controlled to prevent temporal overlap of the electromagnetic window of the subject chamber with the electromagnetic window of an adjacent chamber.

Abstract: Implementations described herein provide a pixelated substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an electrostatic chuck and a cooling base comprising the substrate support assembly, which in turn, allows both lateral and azimuthal tuning of a substrate processed on the substrate support assembly. A processing chamber having a pixelated substrate support assembly and method for processing a substrate using a pixelated substrate support assembly are also provided.

Abstract: A plasma processing apparatus includes a process chamber including a sidewall, a mounting table disposed in the process chamber, a shield member which is disposed along the inner surface of the sidewall to surround the mounting table and has an opening facing the transfer port, and a shutter configured to open/close the opening, the shutter being movable up and down. The shutter has a first portion adapted to face the opening, and a second portion adapted to face the shield member at a lower side of the shield member. The shield member has a lower portion including a contact surface facing the second portion. A contactor adapted to contact the contact surface is disposed at the second portion. The first portion of the shutter closes the opening through a gap between the first portion and the shield member. The contact surface and the contactor are formed of HASTELLOY®.

Abstract: There is provided a temperature control system, including: a stage configured to support a workpiece and provided with a heat exchange medium flow path formed within the stage, the heat exchange medium flow path including a first end and a second end; a first valve; a second valve; a first heat exchange medium supply device including a supply port which supplies a first heat exchange medium adjusted to have a first temperature and a recovery port; a second heat exchange medium supply device including a supply port which supplies a second heat exchange medium adjusted to have a second temperature higher than the first temperature and a recovery port; and a control device configured to control the first and second valves such that the first and second heat exchange mediums are alternately supplied to the first end of the heat exchange medium flow path.

Abstract: The invention provides a device for full-automatic, ultra-low pressure, fractionation-free and non-destructive extraction of water, including a control box, an extraction part, an ultra-low temperature cold trap and a transmission device, wherein the control box and the extraction part are located at the top of a cabinet, the ultra-low temperature cold trap is located inside the cabinet, a touch screen is arranged on the control box, a temperature control meter is arranged on a side face of the control box, the extraction part includes an upper layer plate, a middle layer plate, a bottom plate and a test tube, the bottom plate is fixedly installed on the cabinet, the test tube is accommodated in the ultra-low temperature cold trap, and the transmission device is fixedly installed on the bottom plate.

Abstract: There is provided a temperature control mechanism comprising: a plurality of combinations of a heater and a thyristor, wherein at least one combination of the heater and the thyristor is provided on a zone-by-zone basis, and wherein an area of an electrostatic chuck for mounting a substrate is divided into a plurality of zones; a power supply configured to supply current to heaters of the plurality of combinations respectively through the thyristors of the plurality of combinations; a pair of filters disposed at a power supply line for supplying electric power from the power supply to the heaters and configured to eliminate high frequency power applied to the power supply.

Abstract: An electrostatic chuck assembly, including an electrostatic chuck on which a substrate is loaded; a channel that provides a flow passage for coolant in the electrostatic chuck, the channel having a first opening at a first end corresponding to a center of the substrate and a second opening at a second end corresponding to an edge of the substrate; and a valve box to control a flow direction of the coolant in the channel, the valve box including a first supply valve to control an introduction of the coolant into the first opening; a first return valve to control a drainage of the coolant from the second opening; a second supply valve to control an introduction of the coolant into the second opening; and a second return valve to control a drainage of the coolant from the first opening.

Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate can be reduced to pure metal and the metal reflowed. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, form a remote plasma of a reducing gas species where the remote plasma includes radicals, ions, and/or ultraviolet (UV) radiation from the reducing gas species, and expose a metal seed layer of the substrate to the remote plasma to reduce oxide of the metal seed layer to metal and to reflow the metal.

Abstract: Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material (e.g., silicon or carbon). For example, 10-100 nm thick tin oxide layer can be deposited using atomic layer deposition. Next, tin oxide film is removed from horizontal surfaces, without being completely removed from the sidewalls of the protruding features. Next, the material of protruding features is etched away, leaving tin oxide spacers on the substrate. This is followed by etching the unprotected portions of the first material, without removal of the spacers. Next, underlying layer is etched, and spacers are removed. Tin-containing particles can be removed from processing chambers by converting them to volatile tin hydride.

Abstract: An electrostatic chuck assembly includes a reference temperature sensor, a measurement zone temperature sensor, and a measurement zone temperature calculator. The reference temperature sensor measures a reference temperature of the electrostatic chuck. The measurement zone temperature sensor is spaced from the reference temperature sensor on the electrostatic chuck and senses temperature signals of a plurality measurement zones of the electrostatic chuck. The measurement zone temperature calculator calculates a temperature of each of the measurement zones by setting a measurement range within a temperature range, previously determined based on the reference temperature measured by the reference temperature sensor, and measures the temperature signal of each of the measurement zones sensed by the measurement zone temperature sensor within the measurement range.

Abstract: A method of boil and boil-dry detection for cooking appliances. The method includes the steps: detecting vibrations that correspond to cookware situated on a burner assembly; generating a vibration signal based on the vibrations; and performing signal processing on the vibration signal. The method also includes the steps: collecting vibration data related to the vibration signal; and detecting boiling and boil-dry conditions for a liquid contained within the cookware based at least in part on an evaluation of the vibration data.

Abstract: Methods and systems are provided for filtering lot schedules of a manufacturing facility. A first schedule is identified, in which the first schedule is a previously executed schedule. A processing device generates a pool of lots to be scheduled using information from the first schedule, in which the pool of lots is a subset of a plurality of lots associated with the first schedule. The processing device generates a second schedule using the pool of lots.

Abstract: Internal components of plasma reactors are composed of a toleratable, ceramic filled plasma-useful polymer such as a high temperature engineering thermoplastic, preferably a polyamideimide or polybenzimidazole. The parts exhibit a low erosion rate upon exposure to plasma at low pressure.

Abstract: Disclosed is an optical connection component manufacturing apparatus that manufactures an optical connection component in which a refractive index matching body is attached to a front end face of an optical fiber. A movement mechanism, an X-axis motor, and a movement stage that move the optical fiber set a first interval at which a refractive index matching liquid held on a holding face is adsorbed, by a Coulomb force according to the charging, onto a front end face of the optical fiber charged by a static electricity generating device and then enlarge the interval. The static electricity generating device applies electric charge to the optical fiber in the state of the first interval and continuously applies electric charge to the optical fiber even after the interval starts to be enlarged.

Abstract: A plasma process method of processing an object to be processed by a plasma process while enabling cooling of an inside of a plasma apparatus by taking in and exhausting a gas to evacuate an atmosphere of the inside includes measuring a temperature of the atmosphere of the inside of the plasma process apparatus while the plasma is not generated; and stopping taking the gas into the inside of the plasma process apparatus during the plasma process in a case where the measured temperature is lower than a first preset threshold temperature when the atmosphere is evacuated at a preset volumetric flow rate.

Abstract: Etching is performed through the following process. A substrate is loaded into a processing chamber and mounted on a mounting table therein. Then, in the state where a ring member at least a surface of which is made of a same material as a main component of an etching target film is provided to surround the substrate, a processing gas is injected in a shower-like manner from a gas supply unit oppositely facing the substrate and the etching target film is etched by using a plasma of the processing gas; and evacuating the inside of the processing chamber through an exhaust path. Through this process, unbalanced distribution of plasma active species in the vicinity of a circumferential edge portion of the substrate can be suppressed.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.

Abstract: The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.

Abstract: Internal components of plasma reactors are composed of a toleratable, ceramic filled plasma-useful polymer such as a high temperature engineering thermoplastic, preferably a polyamideimide. The parts exhibit a low erosion rate upon exposure to plasma at low pressure.

Abstract: A plasma processing apparatus is provided that converts a gas into plasma using a high frequency power and performs a plasma process on a workpiece using an action of the plasma. The plasma processing apparatus includes a processing chamber that can be depressurized, a mounting table that is arranged within the processing chamber and holds the workpiece, an electrostatic chuck that is arranged on the mounting table and electrostatically attracts the workpiece by applying a voltage to a chuck electrode, a heater arranged within or near the electrostatic chuck, and a temperature control unit. The heater is divided into a circular center zone, at least two middle zones arranged concentrically at an outer periphery side of the center zone, and an edge zone arranged concentrically at an outermost periphery. The temperature control unit adjusts a control temperature of the heater with respect to each of the zones.

Abstract: A shower head assembly includes an electrode plate, and a laminate base that is constituted of ceramic sheets and provided to hold the electrode plate. The laminate base includes no bonding surface between the ceramic sheets. The laminate base includes a first gas diffusion space formed in its central area and a second gas diffusion space formed in its peripheral area. A first heater electrode layer is provided above the first gas diffusion space, and a second heater electrode layer is provided above the second gas diffusion space. A first coolant passage is formed above the first gas diffusion space, and a second coolant passage is formed above the second gas diffusion space. A first gas supply passage is connected to the first gas diffusion space, and a second gas supply passage is connected to the second gas diffusion space.

Abstract: Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.

Abstract: The present disclosure provides apparatus and methods for monitoring and controlling filaments used in hotwire semiconductor processing and for monitoring integrity of filaments in a hotwire processing chamber. Embodiments of this disclosure may use real time voltage and current feedback signals provided by the power supply, known attributes, for example resistivity, of filament, filament geometries, for example diameter and length, and filament assembly configurations as input, to derive filament temperature in real time. Embodiments of the present disclosure are capable of continuously derive accurate temperatures of the filament assembly in a hotwire processing chamber after the filament assembly has changed geometries due to normal usage by using the measured cold resistance of the wire periodically before the process starts.

Abstract: Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.