For Detection Or Control Of Electrical Parameter (e.g., Current, Voltage, Resistance, Power, Etc.) Patents (Class 156/345.28)
  • Patent number: 10755569
    Abstract: Lighting fixture data hubs and systems and methods for use. An example of a data hub may include an annunciator configured to generate first and second indications; a sensor configured to detect a zone including one or more parking spaces, pedestrians, or other activity areas in a vicinity of the data hub and to determine whether or not one or more vehicles, pedestrians, and/or activities occurring in the activity areas are present within the zone, the sensor further configured to emit signals corresponding to said detection; and a gateway in communication with an on-board processor and the annunciator, the on-board processor configured for EDGE computing and processing to receive and analyze the signals from the sensor, communicate said signals to the gateway, and operable to allow the gateway to direct the annunciator to generate the first indication or the second indication in response to the signals.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: August 25, 2020
    Assignee: ECO Parking Technologies, LLC
    Inventors: William Longardner, Jeffrey Pinyot, Jason Toschlog, Gage Toschlog, Evan Foote, Scott Whitlock, Andrew Huffman, Daniel Hughes
  • Patent number: 10685813
    Abstract: The invention relates to a plasma treatment device with a treatment chamber, at least one pair of microwave plasma sources and at least one voltage source. Each pair of microwave plasma sources consists of a first microwave plasma source and a second microwave plasma source, wherein the first and the second microwave plasma source each have a plasma source wall and, within this, a microwave coupling-in device and a plasma electrode. The first and the second microwave plasma source are arranged within the treatment chamber on the same side of one or more substrates to be processed and adjacently to one another. The plasma electrodes of the first microwave plasma source and the second microwave plasma source are electrically insulated from one another and electrically conductively connected to the at least one voltage source. Here, the at least one voltage source is suitable for supplying the plasma electrodes of the first and the second microwave plasma source with different potentials.
    Type: Grant
    Filed: October 10, 2017
    Date of Patent: June 16, 2020
    Assignee: Meyer Burger (Germany) GmbH
    Inventor: Joachim Mai
  • Patent number: 10674595
    Abstract: A plasma processing apparatus according to one embodiment includes a grounded processing container, a mounting table configured to support a workpiece inside the processing container, a plurality of electrodes arranged to face the mounting table and insulated from one another, a high frequency power supply configured to supply a high frequency power for generating plasma and electrically connected between two different electrodes out of the plurality of electrodes or between one of the plurality of electrodes and the processing container, and an impedance variable circuit configured to control an impedance and electrically connected between two different electrodes out of the plurality of electrodes or between one of the plurality of electrodes and the processing container.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: June 2, 2020
    Assignees: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITY
    Inventor: Masaki Hirayama
  • Patent number: 10622191
    Abstract: A substrate processing method includes supplying RF power from an RF power supply provided with a linear amplifier to a plasma generation apparatus via an electronic matcher, thereby generating plasma and starting a process on a substrate, and stopping the supply of the RF power from the RF power supply when a prescribed time elapses after the generation of plasma starts.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: April 14, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Koji Tanaka, Tomohiro Arakawa
  • Patent number: 10491202
    Abstract: An RF generator includes: a modulation circuit outputting a pulsed RF signal; a variable attenuation circuit adjusting the level of the pulsed RF signal; an output power detecting unit detecting an output power value of the power output from the device; a first comparative arithmetic circuit outputting a first level control signal for controlling the level of the adjusted pulsed RF signal on the basis of a first detected voltage value and a set voltage value set in advance; a second comparative arithmetic circuit outputting a second level control signal for controlling the level of the adjusted pulsed RF signal on the basis of a second detected voltage value and the set voltage value; and a switching circuit switching between the value of the first level control signal and the value of the second level control signal depending on a switching timing setting value.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: November 26, 2019
    Assignee: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yoshiyuki Oshida, Kenji Nasu, Naoya Fujimoto
  • Patent number: 10432248
    Abstract: A RF control circuit is provided and includes a controller, a divider, and a RF sensor. The controller selects a RF, which is a frequency of a reference LO signal. The divider receives a first RF signal detected in a substrate processing chamber and outputs a second RF signal. The first RF signal is generated by a RF generator and supplied to the substrate processing chamber. The RF sensor includes a lock-in amplifier, which includes: a RF path that receives the second RF signal; a LO path that receives the reference LO signal; a first mixer that generates an IF signal based on the second RF signal and the reference LO signal; and a filter that filters the IF signal. The controller generates a control signal based on the filtered IF signal and transmits the control signal to the RF generator to adjust the first RF signal.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: October 1, 2019
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ernest Beauel Hanks, John Valcore, Jr.
  • Patent number: 10424489
    Abstract: A plasma etching method uses, as a processing gas, a mixed gas of at least one fluorocarbon gas and at least one hydrofluoroether gas represented by chemical formula (I).
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 24, 2019
    Assignee: ZEON CORPORATION
    Inventor: Go Matsuura
  • Patent number: 10319566
    Abstract: Disclosed inventions are apparatus for supplying power and an apparatus for treating a substrate including the same. The apparatus for supplying power includes a high-frequency power source that provides a high-frequency power; a plasma source including first and second antennas that generates plasma by using the high-frequency power; and a power divider connected between the high-frequency power source and the plasma source to divide the high-frequency power supplied to the first and second antennas. The power divider includes a first variable device that controls the high-frequency power supplied to the first and second antennas; and a second variable device that compensates for non-linearity of the high-frequency power supplied to the first and second antennas.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: June 11, 2019
    Assignee: Semes Co., Ltd.
    Inventors: Harutyun Melikyan, Ogsen Galstyan, Junghwan Lee, Jong Hwan An, Shin-Woo Nam
  • Patent number: 10312048
    Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: June 4, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Leonid Dorf, Travis Koh, Olivier Luere, Olivier Joubert, Philip A. Kraus, Rajinder Dhindsa, James Hugh Rogers
  • Patent number: 10211031
    Abstract: Disclosed is a plasma processing method for generating plasma between an upper electrode connected with a VF power supply and a susceptor disposed to face the upper electrode to perform a plasma processing on a wafer by the plasma. The plasma processing method includes: providing an auxiliary circuit configured to reduce a difference between a reflection minimum frequency of a first route where a high frequency current generated from the VF power supply flows before ignition of the plasma and a reflection minimum frequency of a second route where the high frequency current generated from the VF power supply flows after the ignition of the plasma; igniting the plasma; and maintaining the plasma.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: February 19, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Chishio Koshimizu, Jun Yamawaku
  • Patent number: 10209294
    Abstract: A method for producing an arc detection signal on the basis of a plurality of observation signals comprises producing an arc detection part-signal for each of at least two observation signals. Producing each of the part-signals includes correlating the respective observation signal with a correlation signal by influencing the correlation signal with the respective observation, thereby producing a correlation result; producing or modifying a coefficient on the basis of the correlation result; and weighting the respective observation signal with the coefficient. The arc detection part-signals are added to form the arc detection signal.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: February 19, 2019
    Assignee: TRUMPF Huettinger GmbH + Co. KG
    Inventors: Markus Bannwarth, Christian Fritsch, Ulrich Heller, Daniel Krausse, Rolf Merte, Moritz Nitschke, Peter Wiedemuth, Christian Bock, Michael Glueck, Thomas Kirchmeier, Ekkehard Mann, Krishna Kishore Nedunuri, Martin Steuber, Markus Winterhalter
  • Patent number: 10161034
    Abstract: A method for cleaning a processing chamber of a substrate processing system includes supplying nitrogen trifluoride (NF3) gas to a remote plasma source (RPS); generating RPS plasma using the RPS; supplying the RPS plasma to the processing chamber; supplying NF3 gas as bypass gas to the processing chamber; striking in-situ plasma in the processing chamber while the RPS plasma is supplied; and cleaning the processing chamber during a cleaning period using both the RPS plasma and the in-situ plasma.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: December 25, 2018
    Assignee: Lam Research Corporation
    Inventors: Keith Fox, Jonathan Church, James Lee, Matthew Mudrow, Kevin Gerber
  • Patent number: 10115567
    Abstract: A plasma processing apparatus can efficiently perform a pulse modulation method of switching a high frequency power to be used in a plasma process between a high level and a low level alternately according to a duty ratio of a modulation pulse. In this plasma processing apparatus, when performing a high/low pulse modulation on the high frequency power for plasma generation, if a weighted variable K is set to be 0.5<K<1, a constant reflection wave power PRH is generated on a high frequency transmission line of a plasma generation system even during a pulse-on period Ton. Meanwhile, during a pulse-off period Toff, a reflection wave power PRL decreases. By adjusting the value of K, a balance between the reflection wave power PRH during the pulse-on period Ton and the reflection wave power PRL during the pulse-off period Toff can be controlled.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: October 30, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taichi Hirano, Ken Yoshida, Hikoichiro Sasaki, Satoshi Yamada, Yoshinobu Hayakawa, Junji Ishibashi, Fumitoshi Kumagai
  • Patent number: 10056230
    Abstract: A power supply system includes a high frequency power supply which supplies a high frequency power; a DC power supply which supplies a first negative DC voltage or a second negative DC voltage having an absolute value larger than that of the first DC voltage; and a control unit which performs a power supply control process of repeating a supply and a stop of the supply of the high frequency power alternately; stopping supplies of the first and second DC voltages for a first period, which is a time period from a beginning of the supply of the high frequency power within a period during which the high frequency power is being supplied; supplying the first DC voltage for a second period except the first period within the period; and supplying the second DC voltage for a period during which the supply of the high frequency power is stopped.
    Type: Grant
    Filed: March 21, 2016
    Date of Patent: August 21, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taichi Hirano, Junji Ishibashi, Keiki Ito, Kunihiro Sato
  • Patent number: 10049857
    Abstract: A repeating setpoint generator module selectively varies a setpoint for an output parameter according to a predetermined pattern that repeats during successive time intervals. A closed-loop module, during a first one of the time intervals, generates N closed-loop values based on N differences between (i) N values of the setpoint at N times during the first one of the time intervals and (ii) N measurements of the output parameter at the N times during the first one of the time intervals, respectively. An adjusting module, during the first one of the time intervals, generates N adjustment values based on N differences between (i) N values of the setpoint at the N times during a second one of the time intervals and (ii) N measurements of the output parameter at the N times during the second one of the time intervals, respectively.
    Type: Grant
    Filed: November 30, 2015
    Date of Patent: August 14, 2018
    Assignee: MKS Instruments, Inc.
    Inventors: Larry J. Fisk, II, Aaron T. Radomski, Jonathan Smyka
  • Patent number: 10018484
    Abstract: Electrostatic capacitance can be measured with high directivity in a specific direction. A sensor chip that measures the electrostatic capacitance includes a first electrode, a second electrode and a third electrode. The first electrode has a first portion. The second electrode has a second portion extended on the first portion of the first electrode, and is insulated from the first electrode within the sensor chip. The third electrode has a front face extended in a direction which intersects with the first portion of the first electrode and the second portion of the second electrode, and is provided on the first portion and the second portion. The third electrode is insulated from the first electrode and the second electrode within the sensor chip. No portion is extended from the first electrode to be positioned above the first portion.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: July 10, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kippei Sugita, Tomohide Minami
  • Patent number: 10014162
    Abstract: An inductive-coupling plasma generation apparatus in which coupling can be made stronger and power can be used more effectively than in a conventional technique. The inductive-coupling plasma generation apparatus includes an electroconductive chamber with a toroidal-shaped electrical discharge space formed inside. The plasma generation apparatus also includes a high-frequency power source connected to the chamber. The power source is configured to cause a high-frequency current to flow through electroconductive material forming the chamber along a toroidal direction.
    Type: Grant
    Filed: August 25, 2016
    Date of Patent: July 3, 2018
    Assignee: DAIHEN Corporation
    Inventors: Michio Taniguchi, Shigeki Amadatsu
  • Patent number: 9841395
    Abstract: A system of inspecting a focus ring is provided. The system includes a measuring device, a transfer device and an operation unit. The measuring device includes a base substrate, a sensor chip and a circuit board. The sensor chip has a sensor electrode and is provided along an edge of the base substrate. The circuit board is configured to output a high frequency signal to the sensor electrode and acquire a digital value indicating electrostatic capacitance based on a voltage amplitude in the sensor electrode. The transfer device is configured to scan the measuring device. The operation unit is configured to obtain difference values by performing a difference operation with respect to the digital values acquired by the measuring device at multiple positions along a direction which intersects with an inner periphery of the focus ring.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: December 12, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kippei Sugita, Tomohide Minami
  • Patent number: 9824862
    Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: November 21, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Kartik Ramaswamy, Igor Markovsky, Zhigang Chen, James D. Carducci, Kenneth S. Collins, Shahid Rauf, Nipun Misra, Leonid Dorf, Zheng John Ye
  • Patent number: 9741542
    Abstract: A plasma generating device that improves plasma generating efficiency can further accommodate changes in plasma generating state because of changes in conditions of surroundings and the like. The plasma generating device is provided with an electromagnetic wave radiating device, which has an electromagnetic wave generating device that oscillates electromagnetic waves and a radiating antenna that radiates electromagnetic waves oscillated by the electromagnetic wave generating device, and a control device that controls the electromagnetic wave radiating device.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: August 22, 2017
    Assignee: IMAGINEERING, INC.
    Inventor: Yuji Ikeda
  • Patent number: 9691618
    Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: June 27, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dougyong Sung, Sejin Oh, Je-Hun Woo, Hyunju Lee, Seungkyu Lim, Kiho Hwang
  • Patent number: 9673027
    Abstract: A test apparatus for efficiently and accurately testing a high frequency voltage dependency of an impedance of a test object without damaging the test object. The test apparatus includes a high frequency power source unit, a reference waveform generator, a matching device, an oscilloscope, a control panel, and a main control unit. The test apparatus may boost a high frequency pulse output at a relatively low power from the high frequency power source unit to a voltage required for a high frequency withstand voltage test to be applied to a test object in a state where impedance matching is performed between the high frequency power source unit and the test by the matching device, that is, under a tuned state. Whether the waveform of the voltage applied to the test object is a defined waveform may be concisely monitored and observed by the oscilloscope.
    Type: Grant
    Filed: January 22, 2014
    Date of Patent: June 6, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takashi Yamamoto, Junichi Shimada
  • Patent number: 9666417
    Abstract: A plasma processing apparatus which generates plasma in a processing vessel supplied with a gas by applying a high-frequency voltage between first and second electrodes and performs plasma processing on a substrate to be processed, the plasma processing apparatus includes a recording unit configured to record a value, which represents a characteristic of the plasma processing performed on the substrate to be performed, in a time series, a identifying unit configured to identify a tendency of a time-series change of values recorded by the recording unit, a determination unit configured to determine whether an alarm is required based on the identified tendency of the time-series change and an alarm unit configured to output the alarm when it is determined that the alarm is required.
    Type: Grant
    Filed: August 12, 2014
    Date of Patent: May 30, 2017
    Assignee: Sakai Display Products Corporation
    Inventors: Masahiko Orimoto, Atsushi Shoji
  • Patent number: 9601301
    Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.
    Type: Grant
    Filed: May 20, 2014
    Date of Patent: March 21, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sergey G. Belostotskiy, Chinh Dinh, Andrew Nguyen, Michael G. Chafin
  • Patent number: 9518323
    Abstract: Method, equipment and systems for measuring a radio frequency crosstalk are disclosed. The method includes: adjusting an impedance value of a matching network associated with a radio frequency electrode (including an anode and a cathode) in a plasma enhanced chemical vapor deposition (PECVD) system, and/or adjusting an impedance value of a radio frequency energy generating equipment associated with the radio frequency electrode, so that the sum of the impedance value of the matching network and the impedance value of the radio frequency electrode is the same as the impedance value of the radio frequency energy generating equipment; measuring an electrical signal received by the radio frequency electrode by the reversibility of energy transfer between the radio frequency electrode and the radio frequency energy generating equipment; and determining the energy of radio frequency crosstalk that the radio frequency electrode is subjected to according to the measured electrical signal.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: December 13, 2016
    Assignees: XIAMEN TIANMA MICRO-ELECTRONICS CO., LTD., TIANMA MICRO-ELECTRONICS CO., LTD.
    Inventors: Weiji Chen, Mingguang Cai, Lei Wang
  • Patent number: 9474142
    Abstract: A plasma generating apparatus includes: a DC power source; a toroidal core oscillation circuit including a first choke coil connected to the DC power source, a first capacitor connected to the first choke coil, and a first switching element and second choke coil connected to the first capacitor; a toroidal core resonance circuit including a third choke coil connected to the second choke coil; and a pair of electrodes connected to the third choke coil.
    Type: Grant
    Filed: January 28, 2016
    Date of Patent: October 18, 2016
    Assignee: PLUSWARE CORPORATION
    Inventor: Yasuyuki Matsumaru
  • Patent number: 9455126
    Abstract: An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: September 27, 2016
    Assignee: Lam Research Corporation
    Inventors: John C. Valcore, Jr., Henry S. Povolny
  • Patent number: 9401263
    Abstract: Etching a feature of a structure by an etch system is facilitated by varying supply of radio frequency (RF) power pulses to the etch system. The varying provides at least one RF power pulse, of the supplied RF power pulses, that deviates from one or more other RF power pulses, of the supplied RF power pulses, by at least one characteristic.
    Type: Grant
    Filed: September 19, 2013
    Date of Patent: July 26, 2016
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Xiang Hu, Gabriel Padron Wells, Jack Chao-Hsu Chang, Mingmei Wang, Taejoon Han
  • Patent number: 9366720
    Abstract: In a method for manufacturing a sensor chip a spacer (3) is arranged at the front side (11) of a substrate (1) at which front side (11) a sensing element (2) is arranged, too. Holes (14) are etched for building vias (15) extending through the substrate (1) between the front side (11) of the substrate (1) and its back side (12). After etching, the holes (14) are filled with conductive material to complete the vias (15). The spacer (3) provides protection to the sensing element (2) and the sensing chip throughout the manufacturing process.
    Type: Grant
    Filed: January 26, 2012
    Date of Patent: June 14, 2016
    Assignee: Sensirion AG
    Inventors: Markus Graf, Matthias Streiff, Werner Hunziker, Christoph Schanz
  • Patent number: 9320127
    Abstract: Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value.
    Type: Grant
    Filed: March 30, 2015
    Date of Patent: April 19, 2016
    Assignee: Lam Research Corporation
    Inventors: John C. Valcore, Jr., Bradford J. Lyndaker
  • Patent number: 9312106
    Abstract: Phase angle between opposing electrodes in a plasma reactor is controlled in accordance with a user selected phase angle. Direct digital synthesis of RF waveforms of different phases for the different electrodes is employed. The synthesis is synchronized with a reference clock. The address generator employed for direct digital synthesis is synchronized with an output clock signal that is generated in phase with the reference clock using a phase lock loop. The phase lock loop operates only during a limited initialization period.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: April 12, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Satoru Kobayashi, Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 9230779
    Abstract: A plasma processing system having a plasma processing chamber comprising at least one of a chamber wall and a chamber liner is disclosed. The plasma processing system includes a plurality of ground straps disposed around a circumference of a chamber surface, the chamber surface being one of the chamber walls and the chamber liner of the plasma processing chamber. The plasma processing system further includes at least a first impedance device coupled to at least a first ground strap of the plurality of ground straps, wherein a second ground strap of the plurality of ground straps is not provided with a second impedance device having the same impedance value as the first impedance device.
    Type: Grant
    Filed: March 19, 2012
    Date of Patent: January 5, 2016
    Assignee: Lam Research Corporation
    Inventors: Sang Ki Nam, Rajinder Dhindsa
  • Patent number: 9140758
    Abstract: The present invention relates to a method for indicating an electric discharge in a non-conducting medium (22) between a rolling element (20) and a raceway (16, 18) in a bearing (12) of an electric drive system (10). The method comprises: remotely detecting radio frequency signals emitted from the electric drive system, which signals comprise a radio frequency signal associated with an electrical discharge in the non-conducting medium, processing the detected radio frequency signals to estimate the electric discharge, and indicating the estimated electric discharge. The present invention also relates to a corresponding device (30, 50, 70, 90) for indicating an electric discharge in a non-conducting medium between a rolling element and a raceway in a bearing of an electric drive system.
    Type: Grant
    Filed: March 12, 2007
    Date of Patent: September 22, 2015
    Assignee: AKTIEBOLAGET SKF
    Inventor: Pavlik Marinov
  • Patent number: 9117905
    Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each other by an isolation structure, forming a gate structure over a portion of each fin; forming spacers on sidewalls of the gate structure, respectively, etching a remaining portion of each fin thereby forming a recess, epitaxially growing silicon to fill the recess including incorporating an impurity element selected from the group consisting of germanium (Ge), indium (In), and carbon (C), and doping the silicon epi with an n-type dopant.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: August 25, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chien-Chang Su, Hsien-Hsin Lin, Tsz-Mei Kwok, Kuan-Yu Chen, Hsueh-Chang Sung, Yi-Fang Pai
  • Patent number: 9103031
    Abstract: A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: August 11, 2015
    Assignee: TEL Epion Inc.
    Inventors: John J. Hautala, Michael Graf, Yan Shao, Brian S. Freer
  • Publication number: 20150144594
    Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.
    Type: Application
    Filed: January 30, 2015
    Publication date: May 28, 2015
    Inventors: Shunsuke Kanazawa, Naoki Yasui, Michikazu Morimoto, Yasuo Ohgoshi
  • Publication number: 20150136325
    Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.
    Type: Application
    Filed: November 12, 2014
    Publication date: May 21, 2015
    Inventors: Zheng John YE, Ganesh BALASUBRAMANIAN, Thuy BRICHER, Jay D. PINSON, II, Hiroji HANAWA, Juan Carlos ROCHA-ALVAREZ, Kwangduk Douglas LEE, Martin Jay SEAMONS, Bok Hoen KIM, Sungwon HA
  • Patent number: 9029728
    Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.
    Type: Grant
    Filed: April 14, 2014
    Date of Patent: May 12, 2015
    Assignee: KLA-TENCOR Corporation
    Inventors: Randall S. Mundt, Paul Douglas MacDonald, Andrew Beers, Mason L. Freed, Costas J. Spanos
  • Publication number: 20150122420
    Abstract: A plasma processing apparatus can control a ratio between an input power during a pulse-on period and an input power during a pulse-off period by a matching operation of a matching device provided on a high frequency transmission line for supplying the high frequency power as a continuous wave without a power modulation. An impedance sensor 96A provided in a matching device of a plasma generation system includes a RF voltage detector 100; a voltage-detection-signal generating circuit 102; an arithmetic-average-value calculating circuit 104; a weighted-average-value calculating circuit 106; and a moving-average-value calculating unit 108 of a voltage sensor system, and also includes a RF electric current detector 110; an electric current-detection-signal generating circuit 112; an arithmetic-average-value calculating circuit 114; a weighted-average-value calculating circuit 116; a moving-average-value calculating unit 118; and an impedance calculating circuit 120 of an electric current sensor system.
    Type: Application
    Filed: October 29, 2014
    Publication date: May 7, 2015
    Inventors: Hiroo Konno, Takashi Shimomoto
  • Publication number: 20150122421
    Abstract: In a plasma processing apparatus, target values for feedback control to be applied to a progressive wave power PF as control parameters, i.e., control instruction values Con and Coff are switched during a pulse-on period Ton and a pulse-off period Toff in each cycle of a modulation pulse, respectively. That is, a first feedback control for making the progressive wave power PF approximate to a first control instruction value Con is performed during the pulse-on period Ton, whereas a second feedback control for making the progressive wave power PF approximate to a second control instruction value Coff is performed during the pulse-off period Toff.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 7, 2015
    Inventors: Hiroo Konno, Shunsuke Kadooka
  • Publication number: 20150126037
    Abstract: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 7, 2015
    Inventors: Lee Chen, Zhiying Chen
  • Publication number: 20150126046
    Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 7, 2015
    Inventors: Merritt Funk, Megan Doppel, John Entralgo, Jianping Zhao, Toshihisa Nozawa
  • Publication number: 20150114563
    Abstract: A plasma processing apparatus includes a high frequency power supply turning a high frequency power ON/OFF and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. A probe detector measures electrical characteristics on the power transmission line and generates measurement signals. A processing unit samples the measurement signals, generates sample values, The processing unit receives a pulse signal corresponding to ON/OFF switching of the high frequency power, generates sample values by sampling the measurement signals at a sampling interval for a period after the lapse of a mask period from an ascending timing thereof until a descending timing thereof, and selects sample values obtained through the last one or more sampling with respect to the descending timing, as detection values.
    Type: Application
    Filed: May 27, 2013
    Publication date: April 30, 2015
    Inventors: Taichi Hirano, Kenji Sato
  • Publication number: 20150118853
    Abstract: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.
    Type: Application
    Filed: December 23, 2014
    Publication date: April 30, 2015
    Inventors: Qian FU, Hyun-Yong YU
  • Patent number: 9017513
    Abstract: A plasma processing chamber is provided comprising one or more process gas inlets, one or more exhaust gas outlets, plasma generating hardware configured to generate a process gas plasma in a plasma processing portion of the plasma processing chamber, a wafer processing stage positioned in the plasma processing chamber, and a plasma monitoring probe assembly. The plasma monitoring probe assembly comprises an electrically conductive probe and an insulator sleeve assembly positioned about the electrically conductive probe. The insulator sleeve assembly comprises a plasma-side sleeve portion and a subterranean sleeve portion positioned about distinct portions of a longitudinal probe axis of the electrically conductive probe of the probe assembly.
    Type: Grant
    Filed: November 7, 2012
    Date of Patent: April 28, 2015
    Assignee: Lam Research Corporation
    Inventor: Simon Gosselin
  • Patent number: 9011633
    Abstract: A plasma generator system for reducing the effects of impedance mismatch. The system has a variable frequency source having an output for emitting an RF signal. A plasma chamber has an input for receiving the RF signal. The variable frequency source modulates at least one of the frequency and phase of the RF signal to improve the system tolerance of impedance mismatches between the output of the variable frequency source and the input of the plasma chamber.
    Type: Grant
    Filed: November 17, 2005
    Date of Patent: April 21, 2015
    Assignee: MKS Instruments, Inc.
    Inventors: Scott R. Bullock, Aaron Radomski, Brent Irvine
  • Patent number: 9011636
    Abstract: A controller 90 of an automatic matching unit includes a first and a second matching control unit 100, 102 for respectively variably controlling the electrostatic capacitances of a first and a second variable capacitors 80, 82 through a first and a second stepping motor 86, 88 such that a measured absolute value ZMm and a measured phase Z?m of a load impedance obtained by an impedance measuring unit 84 become close to a predetermined reference absolute value ZMs and a predetermined reference phase Z?s, respectively; and a gain control unit 112. The gain control unit 112 variably controls a proportional gain of at least one of the first and the second matching unit based on current electrostatic capacitances NC1 and NC2 of the first and the second variable capacitors 80, 82 obtained by a first and a second electrostatic capacitance monitoring unit 108, 110, respectively.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: April 21, 2015
    Assignee: Tokyo Electron Limited
    Inventor: Mitsutoshi Ashida
  • Publication number: 20150096684
    Abstract: In a plasma processing apparatus, when pulse-modulating the high frequency power RF1 for plasma generation and the high frequency power RF2 for ion attraction with a first pulse PS1 and a second pulse PS2 having different frequencies, respectively, an impedance sensor 96A in a matching device 40 of a plasma generation system calculates an average value (primary moving average value ma) of an load impedance on a high frequency transmission line 43 for each cycle of the second pulse PS2 having a lower frequency, and outputs a load impedance measurement value based on those average values of the load impedance. Then, a matching controller 94A controls reactances of reactance elements XH1 and XH2 within a matching circuit 88A such that the load impedance measurement value is equal or approximate to a matching point (50?).
    Type: Application
    Filed: October 8, 2014
    Publication date: April 9, 2015
    Inventors: Koichi Nagami, Koji Itadani, Tsuyoshi Komoda
  • Publication number: 20150096683
    Abstract: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.
    Type: Application
    Filed: May 29, 2014
    Publication date: April 9, 2015
    Applicant: Applied Materials, Inc.
    Inventors: Subhash Deshmukh, Joseph Johnson
  • Publication number: 20150090401
    Abstract: An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.
    Type: Application
    Filed: September 30, 2013
    Publication date: April 2, 2015
    Inventors: Banqiu Wu, Saravjeet Singh, Amitabh Sabharwal, Ajay Kumar