Abstract: A test apparatus for efficiently and accurately testing a high frequency voltage dependency of an impedance of a test object without damaging the test object. The test apparatus includes a high frequency power source unit, a reference waveform generator, a matching device, an oscilloscope, a control panel, and a main control unit. The test apparatus may boost a high frequency pulse output at a relatively low power from the high frequency power source unit to a voltage required for a high frequency withstand voltage test to be applied to a test object in a state where impedance matching is performed between the high frequency power source unit and the test by the matching device, that is, under a tuned state. Whether the waveform of the voltage applied to the test object is a defined waveform may be concisely monitored and observed by the oscilloscope.

Abstract: A plasma processing apparatus which generates plasma in a processing vessel supplied with a gas by applying a high-frequency voltage between first and second electrodes and performs plasma processing on a substrate to be processed, the plasma processing apparatus includes a recording unit configured to record a value, which represents a characteristic of the plasma processing performed on the substrate to be performed, in a time series, a identifying unit configured to identify a tendency of a time-series change of values recorded by the recording unit, a determination unit configured to determine whether an alarm is required based on the identified tendency of the time-series change and an alarm unit configured to output the alarm when it is determined that the alarm is required.

Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.

Abstract: Method, equipment and systems for measuring a radio frequency crosstalk are disclosed. The method includes: adjusting an impedance value of a matching network associated with a radio frequency electrode (including an anode and a cathode) in a plasma enhanced chemical vapor deposition (PECVD) system, and/or adjusting an impedance value of a radio frequency energy generating equipment associated with the radio frequency electrode, so that the sum of the impedance value of the matching network and the impedance value of the radio frequency electrode is the same as the impedance value of the radio frequency energy generating equipment; measuring an electrical signal received by the radio frequency electrode by the reversibility of energy transfer between the radio frequency electrode and the radio frequency energy generating equipment; and determining the energy of radio frequency crosstalk that the radio frequency electrode is subjected to according to the measured electrical signal.

Abstract: A plasma generating apparatus includes: a DC power source; a toroidal core oscillation circuit including a first choke coil connected to the DC power source, a first capacitor connected to the first choke coil, and a first switching element and second choke coil connected to the first capacitor; a toroidal core resonance circuit including a third choke coil connected to the second choke coil; and a pair of electrodes connected to the third choke coil.

Abstract: An arrangement for controlling a plasma processing system is provided. The arrangement includes an RF sensing mechanism for obtaining an RF voltage signal. The arrangement also includes a voltage probe coupled to the RF sensing mechanism to facilitate acquisition of the signal while reducing perturbation of RF power driving a plasma in the plasma processing system. The arrangement further includes a signal processing arrangement configured for receiving the signal, split the voltage signals into a plurality of channels, convert the signals into a plurality of direct current (DC) signals, convert the DC signals into digital signals and process the digital signal in a digital domain to generate a transfer function output. The arrangement moreover includes an ESC power supply subsystem configured to receive the transfer function output as a feedback signal to control the plasma processing system.

Abstract: Etching a feature of a structure by an etch system is facilitated by varying supply of radio frequency (RF) power pulses to the etch system. The varying provides at least one RF power pulse, of the supplied RF power pulses, that deviates from one or more other RF power pulses, of the supplied RF power pulses, by at least one characteristic.

Abstract: In a method for manufacturing a sensor chip a spacer (3) is arranged at the front side (11) of a substrate (1) at which front side (11) a sensing element (2) is arranged, too. Holes (14) are etched for building vias (15) extending through the substrate (1) between the front side (11) of the substrate (1) and its back side (12). After etching, the holes (14) are filled with conductive material to complete the vias (15). The spacer (3) provides protection to the sensing element (2) and the sensing chip throughout the manufacturing process.

Abstract: Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value.

Abstract: Phase angle between opposing electrodes in a plasma reactor is controlled in accordance with a user selected phase angle. Direct digital synthesis of RF waveforms of different phases for the different electrodes is employed. The synthesis is synchronized with a reference clock. The address generator employed for direct digital synthesis is synchronized with an output clock signal that is generated in phase with the reference clock using a phase lock loop. The phase lock loop operates only during a limited initialization period.

Abstract: A plasma processing system having a plasma processing chamber comprising at least one of a chamber wall and a chamber liner is disclosed. The plasma processing system includes a plurality of ground straps disposed around a circumference of a chamber surface, the chamber surface being one of the chamber walls and the chamber liner of the plasma processing chamber. The plasma processing system further includes at least a first impedance device coupled to at least a first ground strap of the plurality of ground straps, wherein a second ground strap of the plurality of ground straps is not provided with a second impedance device having the same impedance value as the first impedance device.

Abstract: The present invention relates to a method for indicating an electric discharge in a non-conducting medium (22) between a rolling element (20) and a raceway (16, 18) in a bearing (12) of an electric drive system (10). The method comprises: remotely detecting radio frequency signals emitted from the electric drive system, which signals comprise a radio frequency signal associated with an electrical discharge in the non-conducting medium, processing the detected radio frequency signals to estimate the electric discharge, and indicating the estimated electric discharge. The present invention also relates to a corresponding device (30, 50, 70, 90) for indicating an electric discharge in a non-conducting medium between a rolling element and a raceway in a bearing of an electric drive system.

Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes forming a plurality of fins, the fins being isolated from each other by an isolation structure, forming a gate structure over a portion of each fin; forming spacers on sidewalls of the gate structure, respectively, etching a remaining portion of each fin thereby forming a recess, epitaxially growing silicon to fill the recess including incorporating an impurity element selected from the group consisting of germanium (Ge), indium (In), and carbon (C), and doping the silicon epi with an n-type dopant.

Abstract: A method of forming a thin film on a substrate is described. The method comprises providing a substrate in a reduced-pressure environment, and generating a gas cluster ion beam (GCIB) in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are set to achieve a thickness of the thin film ranging up to about 300 angstroms and to achieve a surface roughness of an upper surface of the thin film that is less than about 20 angstroms. The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is grown on the at least a portion of the substrate to achieve the thickness and the surface roughness.

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.

Abstract: A sensor apparatus for measuring a plasma process parameter for processing a workpiece. The sensor apparatus includes a base, an information processor supported on or in the base, and at least one sensor supported on or in the base. The at least one sensor includes at least one sensing element configured for measuring an electrical property of a plasma and may include a transducer coupled to the at least one sensing element. The transducer can be configured to receive a signal from the sensing element and convert the signal into a second signal for input to the information processor.

Abstract: A plasma processing apparatus can control a ratio between an input power during a pulse-on period and an input power during a pulse-off period by a matching operation of a matching device provided on a high frequency transmission line for supplying the high frequency power as a continuous wave without a power modulation. An impedance sensor 96A provided in a matching device of a plasma generation system includes a RF voltage detector 100; a voltage-detection-signal generating circuit 102; an arithmetic-average-value calculating circuit 104; a weighted-average-value calculating circuit 106; and a moving-average-value calculating unit 108 of a voltage sensor system, and also includes a RF electric current detector 110; an electric current-detection-signal generating circuit 112; an arithmetic-average-value calculating circuit 114; a weighted-average-value calculating circuit 116; a moving-average-value calculating unit 118; and an impedance calculating circuit 120 of an electric current sensor system.

Abstract: In a plasma processing apparatus, target values for feedback control to be applied to a progressive wave power PF as control parameters, i.e., control instruction values Con and Coff are switched during a pulse-on period Ton and a pulse-off period Toff in each cycle of a modulation pulse, respectively. That is, a first feedback control for making the progressive wave power PF approximate to a first control instruction value Con is performed during the pulse-on period Ton, whereas a second feedback control for making the progressive wave power PF approximate to a second control instruction value Coff is performed during the pulse-off period Toff.

Abstract: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.

Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

Abstract: A plasma processing apparatus includes a high frequency power supply turning a high frequency power ON/OFF and supplying the high frequency power to either one of upper and lower electrodes. A matching circuit and a power transmission line are provided between the high frequency power supply and the either one of the electrodes. A probe detector measures electrical characteristics on the power transmission line and generates measurement signals. A processing unit samples the measurement signals, generates sample values, The processing unit receives a pulse signal corresponding to ON/OFF switching of the high frequency power, generates sample values by sampling the measurement signals at a sampling interval for a period after the lapse of a mask period from an ascending timing thereof until a descending timing thereof, and selects sample values obtained through the last one or more sampling with respect to the descending timing, as detection values.

Abstract: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.

Abstract: A plasma processing chamber is provided comprising one or more process gas inlets, one or more exhaust gas outlets, plasma generating hardware configured to generate a process gas plasma in a plasma processing portion of the plasma processing chamber, a wafer processing stage positioned in the plasma processing chamber, and a plasma monitoring probe assembly. The plasma monitoring probe assembly comprises an electrically conductive probe and an insulator sleeve assembly positioned about the electrically conductive probe. The insulator sleeve assembly comprises a plasma-side sleeve portion and a subterranean sleeve portion positioned about distinct portions of a longitudinal probe axis of the electrically conductive probe of the probe assembly.

Abstract: A controller 90 of an automatic matching unit includes a first and a second matching control unit 100, 102 for respectively variably controlling the electrostatic capacitances of a first and a second variable capacitors 80, 82 through a first and a second stepping motor 86, 88 such that a measured absolute value ZMm and a measured phase Z?m of a load impedance obtained by an impedance measuring unit 84 become close to a predetermined reference absolute value ZMs and a predetermined reference phase Z?s, respectively; and a gain control unit 112. The gain control unit 112 variably controls a proportional gain of at least one of the first and the second matching unit based on current electrostatic capacitances NC1 and NC2 of the first and the second variable capacitors 80, 82 obtained by a first and a second electrostatic capacitance monitoring unit 108, 110, respectively.

Abstract: A plasma generator system for reducing the effects of impedance mismatch. The system has a variable frequency source having an output for emitting an RF signal. A plasma chamber has an input for receiving the RF signal. The variable frequency source modulates at least one of the frequency and phase of the RF signal to improve the system tolerance of impedance mismatches between the output of the variable frequency source and the input of the plasma chamber.

Abstract: An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.

Abstract: In a plasma processing apparatus, when pulse-modulating the high frequency power RF1 for plasma generation and the high frequency power RF2 for ion attraction with a first pulse PS1 and a second pulse PS2 having different frequencies, respectively, an impedance sensor 96A in a matching device 40 of a plasma generation system calculates an average value (primary moving average value ma) of an load impedance on a high frequency transmission line 43 for each cycle of the second pulse PS2 having a lower frequency, and outputs a load impedance measurement value based on those average values of the load impedance. Then, a matching controller 94A controls reactances of reactance elements XH1 and XH2 within a matching circuit 88A such that the load impedance measurement value is equal or approximate to a matching point (50?).

Abstract: An electrode having a first portion and a second portion is formed over a substrate to couple to a bias RF power. The first portion is configured to compensate for an electric field at the second portion to even out a distribution of an etching strength over a workpiece placed over the electrode.

Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.

Abstract: A variable capacitor is provided within a radiofrequency (RF) power transmission path to a bias electrode, in addition to an impedance matching circuit provided within the RF power transmission path to the bias electrode. An RF power supply is operated in a pulsed mode to transmit pulses of RF power through the RF power transmission path to the bias electrode. A capacitance of the variable capacitor is set to control a rate at which a DC bias voltage builds up on a substrate present above the bias electrode during each pulse of RF power. The rate at which the DC bias voltage builds up on the substrate controls an ion energy distribution and an ion angular distribution within a plasma exposed to an electromagnetic field emanating from the substrate.

Abstract: Etching a feature of a structure by an etch system is facilitated by varying supply of radio frequency (RF) power pulses to the etch system. The varying provides at least one RF power pulse, of the supplied RF power pulses, that deviates from one or more other RF power pulses, of the supplied RF power pulses, by at least one characteristic.

Abstract: An RF plasma source has a resonator with its shorted end joined to the processing chamber ceiling and inductively coupled to two arrays of radial toroidal channels in the ceiling, the resonator having two radial zones and the two arrays of toroidal channels lying in respective ones of the radial zones.

Abstract: A plasma processing device includes a processing chamber for generating a plasma, a vacuum window that constitutes a part of a wall of the processing chamber, induction antennas including at least two systems for generating plasma in the processing chamber, radio frequency power sources for applying the current independently to the respective induction antennas, and a controller including phase circuits for controlling the phase of the current of the radio frequency power sources of the respective systems or the current value over time, and a control unit. The controller sequentially time modulates the phase difference between currents flowing to the systems or the current value within a sample processing period to move the plasma generation position so as to make the ion incident angle to the wafer uniform in the wafer plane.

Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process.

Abstract: A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process.

Abstract: A plasma treatment installation including at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece holder that is adapted to enclose each of a plurality of workpiece holders to form a sealed treatment space, and a manipulator for automatically equipping the supporting plates of a workpiece holder with workpieces, while the other workpiece holder is covered by the hood to perform the plasma treatment of the workpieces.

Abstract: The antenna has a structure that the high frequency electrode is received in a dielectric case. The high frequency electrode has a go-and-return conductor structure that two electrode conductors are disposed close to and in parallel to each other with a gap therebetween to form a rectangular plate shape as a whole, and the two electrode conductors are connected by a conductor at an end in the longitudinal direction. A high frequency current flows in the two electrode conductors in opposite directions. A plurality of openings are formed on edges of the two electrode conductors on the side of the gap, and the openings are dispersed and arranged in the longitudinal direction of the high frequency electrode. The antenna is disposed in a vacuum container in a direction that a main surface of the high frequency electrode and a surface of the substrate are substantially perpendicular to each other.

Abstract: A plasma processing apparatus includes a plasma forming part, a putting stage on which a wafer is put, a bias power supply which supplies high-frequency power to the putting stage and a detection part which detects amounts of positive and negative currents flowing between the bias power supply and the putting stage and a ratio of the positive and negative current amounts, and the plasma processing apparatus adjusts formation of the plasma or the plasma processing condition of the wafer in accordance with the ratio.

Abstract: Provided is a plasma processing apparatus in which a variable inductor is installed in series with a variable condenser in a second power feeding unit that distributes and supplies high-frequency power to an inner upper electrode 56. As a result, a characteristic around a resonance point may be broad in a capacitance-outer/inner power distribution ratio of the variable condenser (varicon). Therefore, an area around the resonance point may be stably used as a controllable area within a variable range of varicon capacitance.

Abstract: This disclosure describes systems, methods, and apparatus for reducing a DC bias on a substrate surface in a plasma processing chamber due to cross coupling of RF power to an electrode coupled to the substrate. This is brought about via tuning of a resonant circuit coupled between the substrate and ground based on indirect measurements of harmonics of the RF field level at a surface of the substrate. The resulting reduction in DC bias allows a lower ion energy than possible without this resonant circuit and tuning thereof.

Abstract: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

Abstract: The present disclosure is directed towards a method and apparatus for generating an abatement plasma downstream of a processing chamber using an RF plasma ignited and sustained with an integrated power oscillator circuit driven by feedback based upon a load of the abatement plasma. In one embodiment, a plasma ashing system includes an abatement system configured to receive an effluent byproduct from an upstream processing chamber containing a workpiece. The effluent byproduct is provided along an exhaust conduit to a downstream afterburner unit having an integrated power oscillator, that relies upon an oscillating circuit operatively coupled to an antenna to ignite the abatement plasma within the exhaust conduit. The antenna, together with the plasma load, form a resonant tank circuit, which provides a feedback that drives operation of the oscillating circuit, thereby allowing the oscillating circuit to vary its output based upon changes in the abatement plasma load.

Abstract: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.

Abstract: Methods are disclosed for depositing material onto and/or etching material from a substrate in a surface processing tool having a processing chamber, a controller and one or more devices for adjusting the process parameters within the chamber. The method comprises: the controller instructing the one or more devices according to a series of control steps, each control step specifying a defined set of process parameters that the one or more devices are instructed to implement, wherein at least one of the control steps comprises the controller instructing the one or more devices to implement a defined set of constant process parameters for the duration of the step, including at least a chamber pressure and gas flow rate through the chamber, which duration is less than the corresponding gas residence time (Tgr) of the processing chamber for the step.

Abstract: A plasma etching apparatus includes a first RF power supply unit configured to apply a first RF power for plasma generation to a first electrode or a second electrode disposed opposite to each other in a process container configured to be vacuum-exhausted, a second RF power supply unit configured to apply a second RF power for ion attraction to the second electrode, and a controller configured to control the second RF power supply unit. The second RF power supply unit includes a second RF power supply and a second matching unit. The controller is preset to control the second RF power supply unit to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power and a second power, while controlling the second matching unit to switch a matching operation in synchronism with the power modulation.

Abstract: A plasma processing apparatus performs a stable and accurate matching operation with high reproducibility in a power modulation process of modulating of a high frequency power to be supplied into a processing vessel in a pulse shape. In the plasma processing apparatus, an impedance sensor 96A provided in a matching device performs a dual sampling averaging process on a RF voltage measurement value and an electric current measurement value respectively obtained from a RF voltage detector 100A of a voltage sensor system and a RF electric current detector 108A of an electric current sensor system by sampling-average-value calculating circuits 104A and 112A and by moving-average-value calculating circuits 106A and 114A. Thus, an update speed of a load impedance measurement value outputted from the impedance sensor 96A can be matched well with a driving control speed of a motor in a matching controller.

Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a chamber configured to house a wafer, and a heater stage configured to support and heat the wafer in the chamber. The apparatus further includes a plasma tube connected to the chamber, and in which plasma is generated, and a coil wound around the plasma tube, and in which a current for generating the plasma flows. The apparatus further includes a plasma controller configured to control the current to be flown in the coil to change a generating position of the plasma in an axial direction of the plasma tube.

Abstract: A power supply system 90 includes high frequency power supplies 92 and 93 that supply a high frequency power for plasma generation; a DC power supply 91 that supplies a DC voltage to be applied to an electrode; and control unit 94 that controls the high frequency power supplies 92 and 93 and the DC power supply 91 including a first DC power supply unit 101 that supplies a first negative DC voltage V1, a second DC power supply unit 102 that supplies a second negative DC voltage V2 having a higher absolute value than the first negative DC voltage V1, and a selecting circuit 103 that selectively connects the first DC power supply unit 101 and the second DC power supply unit 102 to the electrode; and a discharging circuit 104 connected with a node 109 between the first DC power supply unit 101 and the selecting circuit 103.