Abstract: Examples of a substrate processing apparatus includes a chamber, an upper cover provided inside the chamber, an electrostatic chuck which includes an annular portion of a dielectric body and an embedded electrode embedded into the annular portion, the electrostatic chuck being provided inside the chamber, and a plasma unit configured to generate plasma in a region below the upper cover and the electrostatic chuck, wherein the annular portion includes an annular first upper surface located immediately below the upper cover, and a second upper surface located immediately below the upper cover and surrounding the first upper surface, the second upper surface having a height higher than a height of the first upper surface.

Abstract: A graphene structure forming method for forming a graphene structure is provided. The method comprises preparing a target substrate, and forming the graphene structure on a surface of the target substrate by remote microwave plasma CVD using a carbon-containing gas as a film-forming raw material gas in a state in which the surface of the target substrate has no catalytic function.

Abstract: A hard mask film forming method includes preparing a substrate in which an etching target film is formed on a base. The hard mask film forming method further includes forming a hard mask film on the substrate while controlling film forming parameters such that tensile stress is set as initial film stress and the tensile stress monotonously increases from a bottom surface of the hard mask film toward an upper surface of the hard mask film.

Abstract: A method and apparatus for performing a plasma chemical vapour deposition process including a mainly cylindrical resonator having an outer cylindrical wall and an inner coaxial cylindrical wall defining therebetween a resonant cavity operable at an operating frequency. The resonant cavity extends in a circumferential direction around a cylindrical axis of the inner and outer cylindrical wall. The outer cylindrical wall includes an input port connectable to an input waveguide. The inner cylindrical wall includes slit sections extending in a circumferential direction around the cylindrical axis. A greatest dimension defining the aperture of the slit sections is smaller than half the wavelength of the operating frequency.

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Abstract: A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. A method of microwave plasma CVD growth of a diamond film on the substrate is also disclosed.

Abstract: A system and method for reactive ion etching (RIE) system of a material is provided. The system includes a plasma chamber comprising a plasma source and a gas inlet, a diffusion chamber comprising a substrate holder for supporting a substrate with a surface comprising the material and a gas diffuser, and a source of a processing gas coupled to the gas diffuser. In the system and method, at least one radical of the processing gas is reactive with the material to perform etching of the material, the gas diffuser is configured to introduce the processing gas into the processing region, and the substrate holder comprises an electrode that can be selectively biased to draw ions generated by the plasma source into the processing region to interact with the at least one processing gas to generate the at least one radical at the surface.

Abstract: Disclosed is an organic coating with a high degree of global planarization. Further disclosed is an iPECVD-based method of coating a substrate with an organic layer having a high degree of global planarization. Disclosed is a flexible, alternating organic and inorganic multi-layer coating with low water permeability, a high-degree of transparency, and a high-degree of global planarization. Also disclosed is an iPECVD-based method of coating a substrate with the alternating organic and inorganic multi-layer coating.

Abstract: A power combiner includes a main body composed of outer and inner conductors, a plurality of power introduction ports configured to introduce electromagnetic wave powers supplied through power supply lines into the main body, a power combining antenna configured to radiate electromagnetic waves to a space between the outer and inner conductors such that the powers are combined, and an output port through which the combined electromagnetic wave is outputted from the main body. The power combining antenna includes a plurality of antenna members, each of which has a first pole and a second pole that is in contact with the inner conductor, and a reflection part configured to reflect the electromagnetic waves.

Abstract: The present invention aims to provide a plasma generation device including: a plasma generation part which generates plasma; diluent gas supply means which supplies a diluent gas for diluting the plasma generated by the plasma generation part; and a spray port through which a plasma gas resulting from the dilution of the plasma with the diluent gas is sprayed, in which the characteristics of the plasma gas are changed and controlled so as to enlarge the plasma gas and enhance the activity of the plasma gas, without controlling the power input from a power source to the plasma generation part. The plasma generation device of the present invention includes an electromagnetic wave production device which irradiates at least one of a region where the plasma is generated and a region where the plasma gas passes with an electromagnetic wave from an antenna.

Abstract: A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.

Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

Abstract: The invention is an plasma processing system with a plasma chamber for processing semiconductor substrates, comprising: a radio frequency or microwave power generator coupled to the plasma chamber; a low pressure vacuum system coupled to the plasma chamber; and at least one chamber surface that is configured to be exposed to a plasma, the chamber surface comprising: a YxOyFz layer that comprises Y in a range from 20 to 40%, O in a range from ?60%, and F in a range of ?75%. Alternatively, the YxOyFz layer can comprise Y in a range from 25 to 40%, O in a range from 40 to 55%, and F in a range of 5 to 35% or Y in a range from 25 to 40%, O in a range from 5 to 40%, and F in a range of 20 to 70%.

Abstract: A processing system is disclosed, having a multiple power transmission elements with an interior cavity that may be arranged around a plasma processing chamber. Each of the power transmission elements may propagates electromagnetic energy that may be used to generate plasma within the plasma process chamber. The power transmission elements may be designed to accommodate a range of power and frequency ranges that range from 500W to 3500W and 0.9 GHz to 9 GHz. In one embodiment, the power transmission elements may include a rectangular interior cavity that enables the generation of a standing wave with two or more modes. In another embodiment, the power transmission elements may have a cylindrical interior cavity that may be placed along the plasma processing chamber or have one end of the cylinder placed against the plasma processing chamber.

Abstract: A microwave induced plasma decapsulation system and method for decapsulation a packaged semiconductor device applies a microwave induced plasma effluent along with etchant gases electrons, ions and free radicals that are chemically reactive to remove the epoxy molding compound encapsulating the semiconductor device. In one embodiment, the decapsulation system utilizes a microwave generator and a coaxial plasma source. In another embodiment, the decapsulation system utilizes a microwave generator, an electromagnetic surface wave plasma source, and a dielectric plasma discharge tube.

Abstract: A microwave induced plasma decapsulation system and method for decapsulation a packaged semiconductor device applies a microwave induced plasma effluent along with etchant gases electrons, ions and free radicals that are chemically reactive to remove the epoxy molding compound encapsulating the semiconductor device. In one embodiment, the decapsulation system utilizes a microwave generator and a coaxial plasma source. In another embodiment, the decapsulation system utilizes a microwave generator, an electromagnetic surface wave plasma source, and a dielectric plasma discharge tube.

Abstract: A plasma processing apparatus for exciting a processing gas by a microwave, includes a focus ring extending in an annular shape, a first tubular member being wrapped around a central axis to extend along an outer periphery of the lower electrode below the focus ring, an annular member made of a dielectric material provided between the focus ring and the first tubular member a second tubular member extending along an outer periphery of the first tubular member and a choke portion suppressing a microwave propagating through the first tubular member via the focus ring and the annular member. And the choke portion protrudes outward in a diametrical direction of the first tubular from the outer periphery of the first tubular member and extends in an annular shape along the periphery of the first tubular member, the choke portion is covered by the second tubular member.

Abstract: A plasma etching apparatus includes a process chamber, a susceptor, microwave permeable plate that is made of a dielectric material that allows microwaves to pass therethrough, a microwave supplying portion including a microwave generation apparatus that generates microwaves of a predetermined frequency, a gas supplying portion for supplying a process gas, an evacuation portion, a bias electric power supplying portion; and an alternating bias electric power control portion that controls the alternating bias electric power, wherein the alternating bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.

Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

Abstract: Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.

Abstract: An optical monitor device of the present microwave plasma etching device has: a monitor head located in a position more radially inward than the edge of a semiconductor wafer W mounted on a susceptor, more radially outward than a coaxial pipe, and above a cover plate; an optical waveguide for monitoring provided vertically below the monitor head, and longitudinally traversing the cooling plate, a dielectric plate, and a dielectric window; and a monitor main body optically connected to the monitor head via an optical fiber.

Abstract: In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing COS gas and O2 gas is supplied to the processing chamber and a microwave for plasma excitation is supplied to the inside of the processing chamber to etch the organic film.

Abstract: A plasma treatment installation including at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece holder that is adapted to enclose each of a plurality of workpiece holders to form a sealed treatment space, and a manipulator for automatically equipping the supporting plates of a workpiece holder with workpieces, while the other workpiece holder is covered by the hood to perform the plasma treatment of the workpieces.

Abstract: A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.

Abstract: Provided is a temperature adjusting mechanism, which can keep deviation of a temperature of a portion in contact with the temperature adjusting mechanism to be small by controlling the temperature accurately at a high speed. A semiconductor manufacturing apparatus using such temperature adjusting mechanism is also provided. A cooling jacket (6) is provided with a cooling channel (61), and a heat lane (62). The heat lane (62) is provided with a heat receiving section (63), and a heat dissipating section (64), and seals a two-phase condensable working fluid (hereinafter referred to as the working liquid) in an annular narrow tube alternately folds back and forth therebetween. The heat dissipating section (64) is a portion to be cooled by the cooling channel (61), and the heat receiving section (63) is a portion having a temperature higher than that of the heat dissipating section (64).

Abstract: A disclosed valve comprises a first valve body including first and second openings that permit gaseous communication between a chamber and an evacuation apparatus; a sealing valve element that moves near/away from the second opening to open/close the second opening; a sealing member provided in the sealing valve element to seal the second opening when the sealing valve element closes the second opening; a valve element retreat area that is provided in an inner wall of the first valve body away from the second opening, and shields the sealing member from an inside of the first valve body when the sealing valve element is moved to the valve element retreat area; and a first pivot shaft that pivots the sealing valve element so that the sealing valve element may be located in one of the second opening and the valve element retreat area.

Abstract: A plasma generation chamber of a plasma processing apparatus is closed by a top plate 3. The top plate 3 has recesses 3A on its surface facing the plasma generation chamber and a central recess 3B on an opposite surface. The top plate 3 is coupled to an antenna thereon. If a microwave is supplied to the antenna, the microwave is radiated through slots of the antenna. The microwave is propagated through the top plate 3 such that the microwave has a plane of polarization and the microwave forms a circularly polarized wave as a whole. Here, resonance absorption of the microwave occurs at a side surface of recesses 3A and the microwave is propagated within the recesses 3A in a single mode. Strong plasma can be generated within each of the recesses 3A, so that a stable plasma mode can be generated in the top plate 3.

Abstract: A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.

Abstract: A surface wave plasma generating antenna serves to generate a surface wave plasma in a chamber by radiating into the chamber a microwave transmitted from a microwave output section through a coaxial waveguide including an outer conductor and an inner conductor. The surface wave plasma generating antenna is formed in a planar shape and has a plurality of slots arranged in a circumferential direction, and each joint portion between two adjacent slots in the circumferential direction is overlapped with at least one of the slots in a diametrical direction.

Abstract: A microwave plasma processing apparatus including a processing space; a dielectric window having a facing surface facing the processing space; and an antenna plate installed on a surface of the dielectric window opposite to the facing surface, and formed with a plurality of slots configured to radiate microwaves for plasma excitation to the processing space through the dielectric window. The plurality of slots includes a first slot group configured to transmit microwaves guided to a center side of the dielectric window, and a second slot group configured to transmit microwaves guided to a peripheral edge side of the dielectric window. The dielectric window includes a first concave portion in a region corresponding to the first slot group of the antenna plate on the facing surface, and a second concave portion in a region corresponding to the second slot group of the antenna plate on the facing surface.

Abstract: Provided is a plasma processing device which processes an object to be processed using plasma. The plasma processing device includes: a processing container configured to perform a processing by the plasma therein; and a plasma generation mechanism including a high-frequency generator disposed outside the processing container to generate high-frequency waves. The plasma generation mechanism is configured to generate the plasma in the processing container using the high-frequency waves generated by the high-frequency generator. The high-frequency generator includes a high-frequency oscillator configured to oscillate the high-frequency waves and an injection unit configured to inject a signal into the high-frequency oscillator. The signal has a frequency which is the same as a fundamental frequency oscillated by the high-frequency oscillator and has reduced different frequency components.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Abstract: A continuously variable microwave circuit capable of being tuned to operate under a plurality of distinct operating conditions, comprising: a waveguide comprising an adjustable tuning element having a core configured to protrude into the waveguide; an actuator in operative communication with the adjustable tuning element, wherein the actuator is operable to selectively vary a length of the core that is protruding into the waveguide so as to minimize reflected microwave power in the plasma asher; and a controller in operative communication with the actuator, wherein the controller is configured to selectively activate the actuator upon a change in the plurality of operating conditions.

Abstract: A semiconductor plasma processing apparatus includes a vacuum chamber in which semiconductor substrates are processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, and an RF energy source adapted to energize the process gas into the plasma state in the vacuum chamber. The apparatus can also include a chamber wall wherein the chamber wall includes a means for supplying a plasma compatible liquid to a plasma exposed surface thereof wherein the plasma compatible liquid flows over the plasma exposed surface thereby forming a flowing protective liquid layer thereon. A liquid supply delivers the plasma compatible liquid to the chamber wall.

Abstract: A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component. The component can be an edge ring which surrounds a semiconductor substrate supported on a substrate support in a plasma processing apparatus wherein plasma is generated and used to process the semiconductor substrate. Alternatively, the protective liquid layer can be cured or cooled sufficiently to form a solid protective layer.

Abstract: Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y2O3 film. A second portion forming an upper side portion of the processing chamber and a first portion forming a lower side portion of the processing container are provided with an insulating upper liner and an insulating lower liner thicker than the upper liner, respectively. Thus, undesirable short-circuits and abnormal electrical discharge are prevented and stable high-frequency current path is formed.

Abstract: A dielectric plate 20 is provided at a ceiling surface facing a susceptor 3 of a processing chamber 2, and a slot antenna 30 having a multiple number of microwave transmissive slots 33 is provided on a top surface of the dielectric plate 20. A protrusion member 21 configured as a separate member from the dielectric plate 20 is provided on a peripheral portion of a bottom surface of the dielectric plate 20 so as to prevent an abnormal electric discharge. Electric field intensity in the vicinity of the dielectric plate 20 is controlled by adjusting a gap between an outer peripheral surface 22 of a cylindrical part of the protrusion member 21 and an inner peripheral surface 5a of a sidewall of the processing chamber 2 or by adjusting a thickness of the cylindrical part of the protrusion member 21.

Abstract: There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

Abstract: There is provided a plasma processing apparatus capable of stably generating plasma by suppressing oscillation of a plasma potential, and capable of preventing contamination caused by sputtering a facing electrode made of metal. A high frequency bias power is applied to an electrode within a mounting table for mounting a target object thereon. An extended protrusion 60 is formed at an inner peripheral surface of a cover member 27. The extended protrusion 60 is formed toward a plasma generation space S and serves as a facing electrode facing an electrode 7 within a mounting table 5 with the plasma generation space S therebetween. A ratio of a surface area of the facing electrode with respect to that of an electrode for bias (facing electrode surface area/bias electrode area) is in a range of from about 1 to about 5.

Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

Abstract: Disclosed is a plasma processing apparatus including: a processing container having a cylindrical columnar shape centering around a predetermined axis and defining a processing space therein; a plurality of columnar dielectric bodies installed at a top side of the processing space; a microwave generator configured to generate microwaves; a waveguide unit configured to connect the microwave generator and the plurality of columnar dielectric bodies; and a stage installed within the processing container to intersect with the predetermined axis. The plurality of columnar dielectric bodies are arranged at predetermined intervals along a circumferential direction around the predetermined axis within the processing space. The waveguide unit branches microwaves input from the microwave generator and supplies the branched microwaves to the plurality of columnar dielectric bodies.

Abstract: An inductively coupled plasma source having multiple gases in the plasma chamber provides multiple ion species to a focusing column. A mass filter allows for selection of a specific ion species and rapid changing from one species to another.

Abstract: A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

Abstract: A plasma etching apparatus includes a process chamber, a susceptor, microwave permeable plate that is made of a dielectric material that allows microwaves to pass therethrough, a microwave supplying portion including a microwave generation apparatus that generates microwaves of a predetermined frequency, a gas supplying portion for supplying a process gas, an evacuation portion, a bias electric power supplying portion; and an alternating bias electric power control portion that controls the alternating bias electric power, wherein the alternating bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.

Abstract: Disclosed is a plasma processing apparatus including a processing container that defines a processing space, a mounting table, and a microwave introducing antenna. The mounting table includes a mounting region where a workpiece accommodated in the processing container is mounted. The microwave introducing antenna includes a dielectric window installed above the mounting table. The dielectric window includes a bottom surface region that adjoins the processing space. The bottom surface region is configured in an annular shape so as to limit a region where a surface wave is propagated to a region above an edge of the mounting region.

Abstract: The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.