Abstract: Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (50), an outer chamber (80) at least partly surrounding the reaction chamber (50) and forming an intermediate volume (70) therebetween, and a substrate support (40) within the reaction chamber (50), comprising a hollow inner volume (42), wherein the hollow inner volume (42) and the intermediate volume (70) are in fluid communication through a channel (45) extending from the hollow inner volume (42) to the intermediate volume (70).

Abstract: The disclosed plasma processing apparatus includes a chamber, a substrate support, a radio frequency power source, and a bias power source. The radio frequency power source generates radio frequency power to generate plasma. The bias power source is connected to a bias electrode of the substrate support, and generates an electric bias. An edge ring mounted on the substrate support receives a part of the electric bias through an impedance adjuster or receives another electric bias. An outer ring extends outside the edge ring in a radial direction, and receives a part of the radio frequency power or other radio frequency power.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: A first electrostatic chuck of a substrate support of the disclosed plasma processing apparatus has first and second electrodes and holds an edge ring. A second electrostatic chuck of the substrate support holds a substrate. The first electrode extends closer to the second electrostatic chuck than the second electrode. During plasma processing, a first voltage having a positive polarity is applied to the first and second electrodes. In a first period after the plasma processing, a second voltage having a negative polarity is applied to the first and second electrodes. In a second period after the first period, a third voltage having a positive polarity is applied to the first electrode, and a fourth voltage having a negative polarity is applied to the second electrode. The absolute value of the third voltage is smaller than the absolute value of the first voltage and the absolute value of the second voltage.

Abstract: An apparatus and a method for treating saltwater and removing chlorine in water to make a variety of sodium-based byproducts and chlorine gas is disclosed. The apparatus comprises a feed tank for receiving water. The feed tank is coupled to a plurality of Radio frequency (RF) chambers. Each of the RF chambers comprises an inlet and an outlet. The outlet is coupled to a treated water effluent manifold. Further, each RF chamber is coupled to a vacuum manifold. Each RF chamber comprises a recirculation pipe to pump water back into the feed tank. The RF chamber comprises a RF system used for bombarding RF energy at predefined frequencies on the water in order to liberate chlorine isotope. Additionally, the RF system bombards RF energy to stretch hydrogen bond in the saltwater to a point of breaking a molecule by applying low pressure. The hydrogen bond captures chlorine. Subsequently, the water is sent through the outlet to the treated water effluent manifold.

Abstract: Embodiments of the inventive concept provides an apparatus for treating a substrate. The apparatus for treating a substrate comprises a housing having a process space therein, a substrate support unit supporting a substrate in the space, a liquid supply unit supplying a liquid to a substrate supported by the substrate support unit, an air flow generation unit generating an air flow in the process space, and the air flow generation unit comprises a first gas supply unit supplying a descending air flow of a first gas in the process space and a second gas supply unit supplying a second gas having lower humidity than the first gas in the space, and when viewed from above, the first gas supply unit and the second gas supply unit are not overlapped each other.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a retractable electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being extended or retracted along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion, and the loop end of the radio-frequency matcher is fixed to the bottom of a chamber body.

Abstract: A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein an electrically conductive supporting rod where a lower electrode is fixed is connected to driving means, the driving means driving the electrically conductive support rod to move axially; besides, the lower electrode is fixed to the bottom of a chamber body via a retractable sealing part, causing the upper surface of the lower electrode to be hermetically sealed in an accommodation space in the chamber body; an electrical connection part is connected on the chamber body; the radio frequency current in the chamber body returns, via the electrical connection part, to the loop end of a radio frequency matcher.

Abstract: A plasma processing apparatus, including a processing; a first radio frequency power source; a sample stage on which the sample is placed; a second radio frequency power; and a control device configured to control, when the second radio frequency power source is controlled based on a change in a plasma impedance, which is generated when a first gas that is a gas for a first step is switched to a second gas that is a gas for a second step, such that the second radio frequency power is changed from a value of the second radio frequency power in the first step to a value of the second radio frequency power in the second step, and a supply time of the first gas such that a supply time of the second radio frequency power in the first step is substantially equal to a time of the first step.

Abstract: Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a telescope electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being telescoped along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion. In this way, the height of the lower electrode may be controlled through telescoping of the retractable electrically conductive part, such that the spacing between the upper and lower pads becomes adjustable.

Abstract: Examples of a substrate processing device include an annular distribution ring, a plurality of connection plates continued to the distribution ring and having non-uniform impedances, a shower plate electrically connected to the plurality of connection plates, and a stage provided below the shower plate so as to face the shower plate.

Abstract: A plasma processing apparatus includes: a processing container; a stage provided in the processing container and configured to place a substrate on the stage; a gas introduction part provided in an upper portion of the processing container to face the stage and configured to introduce a processing gas into the processing container; and an annular exhaust path which is provided in an upper portion of a side wall of the processing container, and in which an opening toward a center of the processing container is formed at an inner circumferential side of the exhaust path, wherein the stage and the gas introduction part are respectively connected to high-frequency power supplies for generating plasma of the processing gas, wherein the exhaust path is grounded, wherein the plasma processing apparatus further comprises a grounded plasma distribution adjuster covering the opening, and wherein through-holes are formed in the plasma distribution adjuster.

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

Abstract: A plasma processing apparatus 10 includes a chamber 17 in which an internal space is provided and a target object carried into the internal space is processed with plasma in the internal space; a high frequency power source 14 configured to supply a high frequency power for plasma generation within the chamber 17; a matching circuit 15 configured to match an impedance of the plasma within the chamber 17 with an impedance of the high frequency power source 14; a signal synchronizer 20 configured to calculate the impedance of the plasma within the chamber 17; a control amount calculator 12 configured to control a frequency and a magnitude of the high frequency power, and an impedance of the matching circuit 15 based on the impedance calculated by the signal synchronizer 20. Further, the signal synchronizer 20 and the control amount calculator 12 are provided on a single substrate 11.

Abstract: A radio frequency (RF) matching circuit control system includes an RF matching circuit including a plurality of tunable components. The RF matching circuit is configured to receive an input signal including at least two pulsing levels from an RF generator, provide an output signal to a load based on the input signal, and match an impedance associated with the input signal to impedances of the load. A controller is configured to determine respective impedances of the load for the at least two pulsing levels of the input signal and adjust operating parameters of the plurality of tunable components to align a frequency tuning range of the RF matching circuit with the respective impedances of the load for the at least two pulsing levels to match the impedance associated with the input signal to the respective impedances.

Abstract: A plasma processing apparatus includes a microwave generation unit configured to generate a microwave, a processing vessel configured to introduce the microwave thereinto, and a gas supply mechanism configured to supply a gas into the processing vessel, plasma being generated within the processing vessel so that a plasma processing is performed on a processing target object. The microwave generation unit includes an oscillation circuit configured to oscillate the microwave, a pulse generation circuit configured to oscillate a control wave having a predetermined frequency bandwidth at a predetermined cycle, and a frequency modulation circuit configured to modulate a frequency of the microwave to a modulated wave having the predetermined frequency bandwidth by the control wave and output the modulated wave, and the frequency modulation circuit alternately and repeatedly outputs the modulated wave and a non-modulated microwave at the predetermined cycle.

Abstract: A processing kit for a plasma processing chamber. The processing kit includes a plurality of ceramic arc-shaped pieces. Each arc-shaped piece has a concave first end and a convex second end and the first end of each arc-shaped piece is configured to mate with an adjacent end of a neighboring arc-shaped piece to form a ring shaped inner isolator.

Abstract: A method of etching a substrate is described. The method includes disposing a substrate having a surface exposing a first material and a second material in a processing space of a plasma processing system, and performing a modulated plasma etching process to selectively remove the first material at a rate greater than removing the second material. The modulated plasma etching process includes a power modulation cycle composed of applying a first power modulation sequence to the plasma processing system, and applying a second power modulation sequence to the plasma processing system, the second power modulation sequence being different than the first power modulation sequence.

Abstract: A method for generating an ion flow asymmetry in a capacitively coupled radiofrequency plasma reactor comprising a step for energization of a first electrode by a radiofrequency voltage waveform. The standardized voltage waveform is an approximate waveform with a degree of approximation of a standardized sawtooth radiofrequency function having different rising and falling slopes. The degree of approximation of the approximate waveform and the pressure P of the gas are sufficiently high for causing the appearance of an asymmetry of the ion flows between the ion flow at the first electrode and the ion flow at a second electrode.

Abstract: Disclosed is an electrostatic chuck device for increasing electrostatic adsorptive force for a focus ring and uniformly cooling the focus ring. In such a device, a mounting table has a holder in the periphery of a placing surface along the circumferential direction of a focus ring, the holder has a pair of banks in the circumferential direction, and an annular groove formed between these banks, and in at least a bank on an outer circumferential position of the focus ring among the pair of the banks, a micro-protruding part including a plurality of micro-protrusions is on a surface facing the focus ring, or convex parts are on a bottom of the groove. The convex parts do not contact the focus ring, and the pair of banks or plurality of micro-protrusions contacts the focus ring and electrostatically adsorbs the focus ring in coordination with the convex parts.

Abstract: A plasma processing apparatus includes a processing chamber including a sidewall; a mounting table including a lower electrode and provided in the processing chamber; an upper electrode arranged to face the lower electrode in a first direction; a high frequency power supply configured to apply a high frequency power for plasma generation to the upper electrode; a gas supply system for supplying a processing gas into the processing chamber; and a grounding unit connected to a ground potential. A first space is defined between the mounting table and the sidewall. A second space is defined between the upper electrode and the lower electrode. The grounding unit is configured to move independently from the upper electrode in the first direction in a third space which extends to the first space in the first direction and also to the second space in a second direction perpendicular to the first direction.

Abstract: A method for producing a steady-state three dimensional shape in a plasma includes filling a space with a gas, ionizing the gas with a radio frequency source to form a plasma, and directing acoustic waves into the plasma from a plurality of acoustic sources. The acoustic waves from each of the plurality of acoustic sources interact to create standing wave pattern forming a three dimensional shape in the plasma.

Abstract: Embodiments of the invention describe semiconductor devices with high aspect ratio fins and methods for forming such devices. According to an embodiment, the semiconductor device comprises one or more nested fins and one or more isolated fins. According to an embodiment, a patterned hard mask comprising one or more isolated features and one or more nested features is formed with a hard mask etching process. A first substrate etching process forms isolated and nested fins in the substrate by transferring the pattern of the nested and isolated features of the hard mask into the substrate to a first depth. A second etching process is used to etch through the substrate to a second depth. According to embodiments of the invention, the first etching process utilizes an etching chemistry comprising HBr, O2 and CF4, and the second etching process utilizes an etching chemistry comprising Cl2, Ar, and CH4.

Abstract: Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.

Abstract: A method for controlling the temperature profile of phosphoric acid process over a wafer surface through the dynamic control of radial dispensing of sulfuric acid at a selected temperature, which includes providing a substrate with a layer formed thereupon; dispensing a first chemical and second chemicals onto the layer while adjusting at least one parameter of the second chemical dispense to vary the etch rate across a region of the substrate.

Abstract: A method of removing particles from a surface of a reticle is disclosed. The reticle is placed in a carrier, a source gas is flowed into the carrier, and a plasma is generated within the carrier. Particles are then removed from a surface of the reticle using the generated plasma. A system of removing particles from a surface includes a carrier configured to house a reticle, a reticle stocker including the carrier, a power supply configured to apply a potential between an inner cover and an inner baseplate of the carrier, and a gas source configured to flow a gas into the carrier. A plasma may be generated within the carrier, and particles can be removed from a surface of the reticle using the generated plasma. An acoustic energy source configured to agitate at least one of the source gas and the generated plasma may be provided to facilitate particle removal using an agitated plasma.

Abstract: Systems and methods for performing edge ramping are described. A system includes a base RF generator for generating a first RF signal. The first RF signal transitions from one state to another. The transition from one state to another of the first RF signal results in a change in plasma impedance. The system further includes a secondary RF generator for generating a second RF signal. The second RF signal transitions from one state to another to stabilize the change in the plasma impedance. The system includes a controller coupled to the secondary RF generator. The controller is used for providing parameter values to the secondary RF generator to perform edge ramping of the second RF signal when the second RF signal transitions from one state to another.

Abstract: A controllability of a size of a mask can be improved in a multi-patterning method. A process of forming a silicon oxide film on a first mask and an antireflection film is performed. In this process, plasma of a first gas including a silicon halide gas and plasma of a second gas including an oxygen gas are alternately generated. Then, a region of the silicon oxide film is removed such that only a region along a side wall of the first mask is left, and then, the first mask is removed and the antireflection film and an organic film is etched.

Abstract: The present disclosure is directed an apparatus for regulating gas flow in a deposition chamber during a deposition process. The apparatus includes an interior wall that forms an accommodating portion that accommodates a wafer support structure and an exterior wall disposed opposite the interior wall. The apparatus further includes an upper surface, coupled to both the interior wall and the exterior wall, that has a plurality of openings therethrough. The plurality of openings are configured to distribute a flow of gas originating above the apparatus when the apparatus is positioned over a gas outlet port of the deposition chamber.

Abstract: An endoscope system having: an endoscope having: an endoscope insertion section configured to be inserted into a subject, wherein the endoscope insertion section defines a channel having a distal opening; and a power transmission electrode arranged to the endoscope insertion section and electrically connected to a power source configured to output a high-frequency power; and a treatment tool having: an electrically powered treatment device; a treatment tool insertion section attached to the electrically powered treatment device, wherein the treatment tool insertion section is configured to be arranged in the channel of the endoscope; and a power reception electrode arranged to the treatment tool insertion section, wherein the power reception electrode is separated from the power transmission electrode to form a capacitor to transfer power from the power source through an electric field between the power transmission electrode and the power reception electrode to power the electrically powered treatment device

Abstract: Apparatuses, systems, and techniques for providing enhanced electrostatic chucks are provided. Such apparatuses, systems, and techniques may include, for example, a common RF and DC electrode in an electrostatic chuck, connection, at a location external to a semiconductor processing chamber, of a high-voltage DC power source and a high-voltage RF power source to a common conductive pathway leading to an electrostatic chuck in the interior of the semiconductor processing chamber, a very thin dielectric layer located on an upper surface of an electrostatic chuck, and/or an axial thermal choke that may be used to control heat flow within an electrostatic chuck.

Abstract: A plasma etching method is provided to perform a desired etching by switching a process condition while maintaining plasma by supplying high frequency power. A first plasma etching process is performed based on a first process condition. A second plasma etching process different from the first process conditions is performed based on a second process condition while supplying first high frequency power having first effective power. Second high frequency power having second effective power is intermittently supplied between the first plasma etching process and the second plasma etching process during a switch from the first plasma etching process to the second plasma etching process. The second effective power of the second high frequency power is equal to or lower than the first effective power of the first high frequency power in the second plasma etching process.

Abstract: An output of a modulated high frequency power is started from a high frequency power supply of a plasma processing apparatus. Here, a first period and a second period are repeated alternately. A moving average value of a load impedance of the high frequency power supply in a first sub-period in the past first period and a moving average value of a load impedance of the high frequency power supply in a second sub-period in the past first period are acquired. A frequency of the modulated high frequency power in the first sub-period and a frequency of the modulated high frequency power in the second sub-period are set according to the moving average values such that the load impedance of the high frequency power supply in the first sub-period and the load impedance of the high frequency power supply in the second sub-period approximate to a matching point.

Abstract: A plasma source assembly for use with a processing chamber is described. The assembly includes a multi-feed RF power connection to a single or multiple RF hot electrodes.

Abstract: Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value.

Abstract: An electrode assembly of a plasma processing apparatus that enables damage to an electrode plate to be prevented, and enables an increase in the number of parts to be prevented, so that the ability to carry out maintenance can be easily maintained. An upper electrode assembly has an upper electrode plate, a cooling plate (C/P) and a spacer interposed between the upper electrode plate and the C/P. The upper electrode plate has therein electrode plate gas-passing holes that penetrate through the upper electrode plate. The C/P has therein C/P gas-passing holes that penetrate through the C/P. The spacer has therein spacer gas-passing holes that penetrate through the spacer. The electrode plate gas-passing holes, the C/P gas-passing holes and the spacer gas-passing holes are not disposed collinearly.

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract: A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

Abstract: A system for controlling an impedance of a radio frequency (RF) return path includes a matchbox further including a match circuitry. The system further includes an RF generator coupled to the matchbox to supply an RF supply signal to the matchbox via a first portion of an RF supply path. The RF generator is coupled to the matchbox to receive an RF return signal via a first portion of an RF return path. The system also includes a switch circuit and a plasma reactor coupled to the switch circuit via a second portion of the RF return path. The plasma reactor is coupled to the match circuitry via a second portion of the RF supply path. The system includes a controller coupled to the switch circuit, the controller configured to control the switch circuit based on a tune recipe to change an impedance of the RF return path.

Abstract: Systems and methods for tuning a parameter associated with plasma impedance are described. One of the methods includes receiving information to determine a variable. The information is measured at a transmission line and is measured when the parameter has a first value. The transmission line is used to provide power to a plasma chamber. The method further includes determining whether the variable is at a local minima and providing the first value to tune the impedance matching circuit upon determining that the variable is at the local minima. The method includes changing the first value to a second value of the parameter upon determining that the variable is not at the local minima and determining whether the variable is at a local minima when the parameter has the second value.

Abstract: A plasma processing apparatus comprises an upper electrode 42, a lower electrode, a grounding member 61 provided above the upper electrode 42 via an insulating member 60; and a DC power supply for applying a DC voltage to the upper electrode 42. Gas diffusion rooms 54 and 55 communicating with a gas supply opening 53 formed at a lower surface of the upper electrode 42 are formed in the upper electrode 42 and a gas flow path 62 communicating with the gas diffusion rooms 54 and 55 is formed in the insulating member 60. A bent portion 63 for allowing a gas within the gas flow path to flow in a direction having at least a horizontal component is formed at the gas flow path 62 such that an end of the gas flow path 62 cannot be seen from the other end thereof when viewed from the top.

Abstract: The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between.

Abstract: An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: A system for modifying the uniformity pattern of a thin film deposited in a plasma processing chamber includes a single radio-frequency (RF) power source that is coupled to multiple points on the discharge electrode of the plasma processing chamber. Positioning of the multiple coupling points, a power distribution between the multiple coupling points, or a combination of both are selected to at least partially compensate for a consistent non-uniformity pattern of thin films produced by the chamber. The power distribution between the multiple coupling points may be produced by an appropriate RF phase difference between the RF power applied at each of the multiple coupling points.