Abstract: A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps.

Abstract: Embodiments of the present invention relate to a plasma chamber having a coil assembly which improves plasma uniformity and improves power coupling to the plasma. One embodiment provides a plasma chamber. The plasma chamber includes a chamber body having sidewalls and a lid, wherein the chamber body defines a processing volume. The plasma chamber further includes a coil assembly disposed over the lid configured to generate inductively coupled plasma within the processing volume, wherein the coil assembly comprises two or more horizontal coils arranged in a common horizontal plane.

Abstract: An antenna unit for generating a plasma includes: a first antenna including a first incoming portion and a plurality of first sub-antennas divided from the first incoming portion; and a second antenna including a second incoming portion and a plurality of second sub-antennas divided from the second incoming portion, the first and second incoming portions constituting a coaxial line.

Abstract: A plasma processing chamber that enables an amount of attached polymer to be controlled easily with a simple construction. A vessel 11 houses a semiconductor wafer W. A susceptor 12 is disposed in the vessel 11 and is connected to a lower electrode radio frequency power source 20. In a plasma processing chamber 10, RIE and ashing can be carried out on the semiconductor wafer W using plasma produced from processing gases introduced into the vessel 11. A side wall member 45 is disposed in the vessel 11 and exposed to the plasma. A potential of the side wall member 45 is set to either a floating potential or a ground potential in accordance with which of RIE and ashing is carried out.

Abstract: A substrate processing method using a substrate processing apparatus includes a first step and a second step. The first step is to apply a negative voltage pulse from a pulsed power supply to be included in the apparatus. The second step is to apply floating potential for an interval of time between the negative voltage pulse and a positive voltage pulse from the pulsed power supply subsequent to the negative voltage pulse. In addition, the apparatus includes a chamber, a first electrode, a second electrode, an RF power supply, and the pulsed power supply. The second electrode is provided so that the second electrode faces the first electrode to hold a substrate. The RF power supply applies an RF voltage having a frequency of 50 MHz or higher to the second electrode. The pulsed power supply repeatedly applies a voltage waveform with the RF voltage to the second electrode.

Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.

Abstract: An inductively coupled plasma ion source for a focused ion beam (FIB) system is disclosed, comprising an insulating plasma chamber with a feed gas delivery system, a compact radio frequency (RF) antenna coil positioned concentric to the plasma chamber and in proximity to, or in contact with, the outer diameter of the plasma chamber. In some embodiments, the plasma chamber is surrounded by a Faraday shield to prevent capacitive coupling between the RF voltage on the antenna and the plasma within the plasma chamber. High dielectric strength insulating tubing is heat shrunk onto the outer diameter of the conductive tubing or wire used to form the antenna to allow close packing of turns within the antenna coil. The insulating tubing is capable of standing off the RF voltage differences between different portions of the antenna, and between the antenna and the Faraday shield.

Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.

Abstract: There is provided a plasma processing apparatus including a processing chamber having a dielectric window; a substrate holding unit for holding thereon a processing target substrate within the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma process on the substrate; a RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing chamber by inductive coupling; and a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas. Here, the RF antenna includes a plurality of coil segments that are arranged along a loop having a preset shape and a preset size while electrically connected in parallel to each other.

Abstract: There is provided an inductively coupled plasma processing apparatus capable of reducing a RF power loss within a high frequency power supply unit (particularly, a matching unit) and capable of enhancing a plasma generation efficiency. In this inductively coupled plasma processing apparatus, a multiple number of closed-loop secondary circuits 96, 98 independent from each other are formed between a coaxial antenna group 54 and a transformer 68. Further, by varying electrostatic capacitances of variable capacitors 64 and 66, secondary currents I2A and I2B flowing through an inner antenna 58 and an outer antenna 60, respectively, of the coaxial antenna group 54 are independently controlled. Accordingly, it is possible to readily control a plasma density distribution on a semiconductor wafer W in a diametrical direction.

Abstract: There is provided an inductively coupled plasma etching apparatus capable of suppressing a wavelength effect within a RF antenna and performing a plasma process uniformly in both a circumferential and a radial direction. In the plasma etching apparatus, a RF antenna 54 is provided on a dielectric window 52 to generate inductively coupled plasma. The RF antenna 54 includes an inner coil 58, an intermediate coil 60 and an outer coil 62 in the radial direction. The inner coil 58 includes a single inner coil segment 59 or more than one inner coil segments 59 connected in series. The intermediate coil 60 includes two intermediate coil segments 61(1) and 61(2) separated in a circumferential direction and electrically connected with each other in parallel. The outer coil 62 includes three outer coil segments 63(1), 63(2) and 63(3) separated in a circumferential direction and electrically connected with each other in parallel.

Abstract: An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm3. The gas holes extend between the plenum and a plasma exposed surface of the showerhead plate and the gas holes have an aspect ratio of at least 2. A gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber through the showerhead plate while the semiconductor substrate is supported on the substrate support.

Abstract: Workpieces in a vacuum chamber are treated by receiving a mains voltage from a voltage supply network; generating at least one intermediate circuit voltage; generating a first RF signal of a basic frequency, and of a first phase position, from the at least one intermediate circuit voltage; generating a second RF signal of the basic frequency, and of a second phase position, from the at least one intermediate circuit voltage; and coupling the first and the second signal and generating an output signal for the vacuum chamber using a 3 dB coupler.

Abstract: A plasma reactor includes a chamber in which a wafer is treated by a plasma reaction, the chamber being provided at an upper portion with a cylindrical dielectric window, a multiple antenna structure disposed on upper and lower portions of the dielectric window to generate RF magnetic field and apply the RF magnetic field inside the chamber through the dielectric window, thereby generating RF electric field, and an RF electric power supply unit for allowing for a time variation of the magnetic field of the multiple antenna structure.

Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Abstract: A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

Abstract: A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

Abstract: A plasma generating apparatus is provided. The plasma generating apparatus may include a vacuum chamber, an ElectroStatic Chuck (ESC), a first antenna part including a first antenna and a first antenna cover, and a second antenna part including a second antenna and a second antenna cover. The vacuum chamber has a vacant interior and a top sealed by an insulation vacuum plate. The ESC is disposed at a center of the inside of the vacuum chamber. The first antenna is coupled to a through-hole of the second antenna. The first antenna cover airtightly covers a top of the first antenna. The second antenna is coupled to the through-hole of the insulation vacuum plate. The second antenna cover airtightly covers a top of the first antenna part and the second antenna.

Abstract: The present invention provides a plasma processing device capable of inducing a strong radio-frequency electric field within a vacuum container while preventing sputtering of the antenna conductor, an increase in the temperature of the antenna conductor and the formation of particles. A plasma processing device according to the present invention includes a vacuum container, a radio-frequency antenna placed between an inner surface and an outer surface of a wall of the vacuum container, and a dielectric separating member for separating the radio-frequency antenna from an internal space of the vacuum container. As compared to a device using an external antenna, the present device can induce a stronger magnetic field in the vacuum container. The separating member has the effects of preventing the radio-frequency antenna from undergoing sputtering by the plasma produced in the vacuum container, suppressing an increase in the temperature of the radio-frequency antenna, and preventing the formation of particles.

Abstract: An inductively coupled plasma processing device using a radio-frequency electric discharge, including: a vacuum container; an antenna-placing section provided between an inner surface and an outer surface of a wall of the vacuum container; a radio-frequency antenna placed in the antenna-placing section, the radio-frequency antenna being terminated without completing one turn; and a dielectric separating member separating the antenna-placing section and an internal space of the vacuum container, wherein the radio-frequency antenna has a length equal to or shorter than one quarter of a wavelength of the radio-frequency waves.

Abstract: Parasitic plasma in voids in a component of a plasma processing chamber can be eliminated by covering electrically conductive surfaces in an interior of the voids with a sleeve. The voids can be gas holes, lift pin holes, helium passages, conduits and/or plenums in chamber components such as an upper electrode and a substrate support.

Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

Abstract: The present invention relates to an etching apparatus which is capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and in which deterioration of etching shape does not occur. An etching apparatus 1 has a chamber 2 having a plasma generating space 9 and a processing space 6, a coil 16 disposed on the outside of a portion corresponding to the plasma generating space 9, a platen 10 which is provided in the processing space 6 and on which a substrate K is to be placed, a processing gas supply mechanism 19 for supplying a processing gas into the plasma generating space 9, an RF power supply mechanism 17 for supplying RF power to the coil 16, and a power supply mechanism for platen 13 for supplying RF power to the platen 10. A cylindrical plasma density adjusting member 20 which is made of a conductive material grounded is fixedly provided on an inner wall of the chamber 2 between the plasma generating space 9 and the platen 10.

Abstract: The plasma apparatus includes a conveying unit for conveying a substrate in a conveying direction while being situated at a processing position, an elongated electric field forming unit for forming an induction electric field by a coil, opposed to the processing position, a power supply for supplying high frequency power to the coil, an elongated gas introducing unit and a separating unit for separating a region where the forming unit is arranged and a region where the introducing unit is arranged from each other in an airtight fashion, having an elongated dielectric window arranged between the processing position and the forming unit. The forming unit, the introducing unit and the dielectric window are arranged in such a way that there longitudinal directions are matched with a width direction of the substrate being conveyed, and orthogonal to the conveying direction.

Abstract: A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Abstract: A method of localized plasma processing improves processing speed and reduces work piece damage compared to charged particle beam deposition and etching. In one embodiment, a plasma jet exits a plasma generating chamber and activates a reactive gas. A jet of plasma and reactive gas impacts and processes the work piece. Because the plasma and the ions in the reactive gas can have low kinetic energy, there can be little or no surface damage. This is particularly useful for deposition processes. When it is desired to etch material, the reactive ions can be more energetic to enhance etching.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.

Abstract: The present invention relates to a plasma etching apparatus capable of uniformly etching the entire surface of a substrate regardless of the kind of the substrate.

Abstract: The present invention generally includes a remote plasma source and a method of generating a plasma in a remote plasma source. Cleaning gas may be ignited into a plasma in a remote location and then provided to the processing chamber. By flowing the cleaning gas outside of a cooled RF coil, a plasma may be ignited at either high or low pressure while providing a high RF bias to the coil. Cooling the RF coil may reduce sputtering of the coil and thus reduce undesirable contaminants from being fed to the processing chamber with the cleaning gas plasma. Reduced sputtering from the coil may extend the useful life of the remote plasma source.

Abstract: The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

Abstract: Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.

Abstract: A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.

Abstract: The present invention generally provides apparatus and method for adjusting plasma density distribution in an inductively coupled plasma chamber. One embodiment of the present invention provides an apparatus configured for processing a substrate. The apparatus comprises a chamber body defining a process volume configured to process the substrate therein, and a coil assembly coupled to the chamber body outside the process volume, wherein the coil assembly comprises a coil mounting plate, a first coil antenna mounted on the coil mounting plate, and a coil adjusting mechanism configured to adjust the alignment of the first coil antenna relative to the process volume.

Abstract: A method and an apparatus are proposed for simultaneously coating the inner walls of a plurality of hollow containers, such as bottles, with fluid-impermeable barrier layers applied by a PECVD method with the use of transversal antennas capable of creating plasma having density increased in the vicinity of the inner walls of the containers. The barrier-layer application period is divided into a coating period and a noncoating cooling period, with RF energy constantly maintained under working conditions with shunting thereof from the coating station to the dummy loads during noncoating periods used for cooling the plastic containers. The apparatus comprises a vacuum chamber with a conveyor that transports the containers in a preoriented state for interaction with a plurality of aligning elements that can be inserted into the container openings for subsequent fixation at equal distances in positions aligned with the antennas that can be inserted into the containers for generation of the coating-applying plasma.

Abstract: A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

Abstract: The present invention is directed to a method and apparatus for etching various metals that may be used in semiconductor or integrated circuit processing through the use of non-halogen gases such as hydrogen, helium, or combinations of hydrogen and helium with other gases such as argon. In one exemplary embodiment of the present invention, in a reaction chamber, a substrate having a metal interconnect layer deposited thereon is exposed to a plasma formed of non-halogen gas. The plasma generated is maintained for a certain period of time to provide for a desired or expected etching of the metal. In some embodiments, the metal interconnect layer may be copper, gold or silver.

Abstract: An apparatus and a method for operating the same. The method includes providing an apparatus which includes a chamber, wherein the chamber includes first and second inlets, an anode and a cathode structures in the chamber, and a wafer on the cathode structure. A cleaning gas is injected into the chamber via the first inlet. A collecting gas is injected into the chamber via the second inlet. The cleaning gas when ionized has a property of etching a top surface of the wafer resulting in a by-product mixture in the chamber. The collecting gas has a property of preventing the by-product mixture from depositing back to the surface of the wafer.

Abstract: Process chambers having shared resources and methods of use are provided. In some embodiments, substrate processing systems may include a first process chamber having a first substrate support disposed within the first process chamber, wherein the first substrate support has a first heater and a first cooling plate to control a temperature of the first substrate support; a second process chamber having a second substrate support disposed within the second process chamber, wherein the second substrate support has a second heater and a second cooling plate to control a temperature of the second substrate support; and a shared heat transfer fluid source having an outlet to provide a heat transfer fluid to the first cooling plate and the second cooling plate and an inlet to receive the heat transfer fluid from the first cooling plate and the second cooling plate.

Abstract: A plasma processing apparatus includes a processing chamber; a plasma generating unit for generating a plasma of a gas supplied into the processing chamber; a substrate mounting table, disposed in the processing chamber, for mounting a semiconductor substrate having a surface on which an etching and/or a film forming process is to be performed. The apparatus further includes a metal member disposed in the processing chamber and to be etched by the plasma generated in the processing chamber to release a precursor of a film to be formed by the film forming process into the processing chamber; a gas supply unit for supplying a first and a second gas into the processing chamber, wherein the second gas which includes halogen atoms and is different from the first gas; a first and a second wiring for supplying high frequency power to the metal member and the substrate mounting table, respectively.

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract: An inner electrode for barrier film formation is an inner electrode for barrier film formation that is inserted inside a plastic container having an opening, supplies a medium gas to the inside of the plastic container, and supplies high frequency power to an outer electrode arranged outside the plastic container, thereby generating discharge plasma on the inner surface of the plastic container to form a barrier film on the inner surface of the plastic container, and that is provided with a gas supply pipe (101) having a gas flow path (101a) to supply a medium gas (G) and an insulating member (103) screwed into an end portion of the gas supply pipe (101) to be flush therewith and having a gas outlet (102) communicated with the gas flow path (101a).

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle.

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber, at least a portion of which is formed of a dielectric window; a substrate supporting unit for supporting a target substrate in the processing chamber; and a processing gas supply unit for supplying a desired processing gas into the processing chamber. Further, the plasma processing apparatus includes an RF antenna provided outside the dielectric window; a high frequency power supply unit for supplying to the RF antenna a high frequency power; and a switching network switched among a parallel mode, a multiplication series mode, and a minimization series mode.

Abstract: A novel ion source is described having an improved lifetime. The ion source, in one embodiment, is a proton source, including an external RF antenna mounted to an RF window. To prevent backstreaming electrons formed in the beam column from striking the RF window, a back streaming electron dump is provided, which in one embodiment is formed of a cylindrical tube, open at one end to the ion source chamber and capped at its other end by a metal plug. The plug, maintained at the same electrical potential as the source, captures these backstreaming electrons, and thus prevents localized heating of the window, which due to said heating, might otherwise cause window damage.

Abstract: An inductively coupled plasma processing apparatus (100) comprises a plasma chamber (12) with a dielectric window (400) forming a self-supporting wall element of the plasma chamber (12). The dielectric window (400) has an external and an internal side with respect to the chamber (12). An electromagnetic field source (140) is arranged in front of the external side of the dielectric window (400) for generating an electromagnetic field within the plasma chamber (12). The field source comprises at least one magnetic core (301, 302, 303). The at least one magnetic core (301, 302, 303) is attached to the external side of the dielectric window (400), such that the at least one magnetic core helps the dielectric window (400) to withstand collapsing forces caused by negative pressure inside said chamber during operation.

Abstract: A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.

Abstract: An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both. The exhaust assembly includes a powered exhaust plate in combination with a ground electrode is utilized to form the secondary plasma surrounding a peripheral edge of a substrate treated in the plasma processing system.

Abstract: Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately.

Abstract: A plasma processing apparatus used in semiconductor device manufacturing includes a process kit formed of insulating materials such as quartz and coated with a Y2O3 coating. The Y2O3 coating is a thin film formed using suitable CVD or PVD operations. The Y2O3 coating is resistant to degradation in fluorine etching chemistries commonly used to etch silicon in semiconductor manufacturing. The plasma processing apparatus may be used in etching, stripping and cleaning operations. Also provided in another embodiment is a plasma processing apparatus having a quartz process kit coated with a sapphire-like film.