Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract: Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.

Abstract: A plasma reactor for processing a workpiece such as a mask or wafer includes a vacuum chamber having a cylindrical side wall, a ceiling overlying the side wall and a ring supported on a top edge of the side wall and supporting the ceiling, the ring comprising an external surface and an interior surface. An RF plasma source power applicator and an RF source power generator coupled to the applicator furnish plasma source power. Plural passages extend in a radial direction through the ring from the external surface to the interior surface and are spaced apart along a circumference of the ring. A process gas supply furnishes process gas. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to the process gas supply.

Abstract: A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second support surface adapted to support a second substrate within the processing chamber. One or more gas sources in fluid communication with one or more gas distribution members supply process gas to a first zone adjacent to the first substrate support and a second zone adjacent to the second substrate support. A radio-frequency (RF) antenna adapted to inductively couple RF energy into the interior of the processing chamber and energize the process gas into a plasma state in the first and second zones. The antenna is located between the first substrate support and the second substrate support.

Abstract: An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz tube that interconnects the cylindrical elements. The coating is formed by a PE CVD process generated inside the chamber by a transversal RF antenna unit which creates a plasma column that participates in rotation simultaneously with linear motion thus providing uniform coating of the inner surface of the tube. The method of the invention consists of depositing a layer of silicon dioxide onto the inner surface of a plastic tube by means of the aforementioned antenna assembly. The plasma column is rotated by the RF magnetic field which is rotated by using two RF generators of different frequencies that energize two groups of specifically interconnected coils.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle.

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

Abstract: A plasma generating apparatus is provided. The plasma generating apparatus includes a plasma process chamber, a top electrode board, a bottom electrode board and at least one pair of impedance modulators. The top electrode board is coupled to a radio frequency (RF) power source. The impedance modulators are provided in pairs and are parallel-connected to the top electrode board at two geometrically symmetrical locations, wherein each impedance modulator has an impedance modulation curve whose value changes with time, and the value of a parallel equivalent impedance curve of the impedance modulation curves is constant with time.

Abstract: Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

Abstract: A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a wall that defines a plasma formation region where a chemically-reducing species is formed from a fluid. A portion of the wall is formed of a substance that is substantially inert to the chemically-reducing species. The wall prevents the chemically-reducing species from interacting with an inner surface of the plasma chamber to form a conductive substance. The barrier component also includes an opening in fluid communication with the plasma formation region. The fluid is introduced into the plasma formation region via the opening.

Abstract: An arrangement for performing plasma confinement within a processing chamber during substrate processing is provided. The arrangement includes a first peripheral ring positioned next to a secondary peripheral ring. The first peripheral ring surrounds a confined chamber volume that sustains plasma for etching a substrate. The first peripheral ring includes a first plurality of slots for exhausting processed byproduct gas from the confined chamber volume. The second peripheral ring includes a second plurality of slots that is positioned next to the first plurality of slots such that the second plurality of slots does not overlap the first plurality of slots, thereby preventing a direct line-of-sight from within the confined chamber volume to an outside chamber volume (an area outside of the first peripheral ring). The arrangement also includes a manifold connecting the two rings to provide a route for exhausting the processed byproduct gas from the confined chamber volume.

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract: Embodiments of dual mode inductively coupled plasma reactors and methods of use of same are provided herein. In some embodiments, a dual mode inductively coupled plasma processing system may include a process chamber having a dielectric lid and a plasma source assembly disposed above the dielectric lid. The plasma source assembly includes a plurality of coils configured to inductively couple RF energy into the process chamber to form and maintain a plasma therein, a phase controller for adjusting the relative phase of the RF current applied to each coil in the plurality of coils, and an RF generator coupled to the phase controller and the plurality of coils.

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

Abstract: A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring.

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

Abstract: The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber 10, a plasma generating high frequency power supply 16, and a measurement device unit 3 for estimating the status of the apparatus via reflected waves 54 of the incident waves 53 reflected from the processing apparatus including a waveform generator 32, a VCO 33, a directional coupler 34, a detector 35 and a measurement data processing unit 36, frequency-swept high frequency waves 53 for measurement are introduced to the processing chamber where no plasma discharge is performed, so as to monitor the change of absorption spectrum frequency of the reflected waves 54 to thereby monitor the change in status of the processing apparatus.

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract: A method and apparatus for plasma etching a workpiece, such as a semiconductor wafer, including a thin film stack having a top film disposed over a bottom film with an intervening middle film there between. Etch selectivity between the top and bottom films may be as low as between 1:1 and 2:1 and a first carbon-lean gas chemistry is used to etch through the top film, a second carbon-lean gas chemistry is used to etch through the middle film, and the bottom film is etched through by alternating between depositing a polymer passivation on the top film using a carbon-rich gas chemistry and an etching of the bottom film with a third carbon-lean gas chemistry, which may be the same as the first carbon-lean gas chemistry.

Abstract: A substrate treatment apparatus includes a process chamber providing a reaction region and including a body and a lid, the lid having a plurality of openings, a plurality of insulating plates sealing the plurality of openings, respectively, a plurality of antennas over the plurality of insulating plates, respectively, a gas injection unit over the lid and the plurality of insulating plates, and a substrate holding unit in the reaction region, wherein a substrate is disposed on the substrate holding unit.

Abstract: An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure environment in the plasma process chamber.

Abstract: A plasma chamber having a switchable bias frequency superimposed onto plasma source frequency and applied to the cathode. A power supplier capable of generating multiple RF bias frequencies is coupled into a match network through a switch. The match network couples one of the bias frequencies to the cathode. Another match network applied a source RF power to the cathode. One parallel connection of variable shunt capacitor and fixed capacitor are provided between ground and input of the switch and another is connected between ground and the input of the source RF match network.

Abstract: A plasma processing apparatus includes: a processing chamber that accommodates a substrate therein; a lower electrode positioned within the processing chamber and serving as a mounting table; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode or the upper electrode; a second high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first frequency to the lower electrode; at least one bias distribution control electrode positioned at least in a peripheral portion above the lower electrode; and at least one bias distribution control power supply that applies an AC voltage or a square wave voltage of a third frequency lower than the second frequency to the at least one bias distribution control electrode.

Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Abstract: In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f1 and f2, and an edge ground return path is provided for each of the frequencies f1 and f2. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

Abstract: An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.

Abstract: The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.

Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.

Abstract: The present invention relates to a plasma etching apparatus, which comprises a chamber, a substrate support disposed inside the chamber to support a substrate, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, an antenna disposed at a position on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber, and a bias-applying unit for applying bias to the substrate support. According to the present invention, the shield and the substrate support prevent plasma from being generated at other portions of a substrate except an edge portion of the substrate. Inductively coupled plasma is employed to generate plasma with high density, thereby removing a thin film and particles remained at the edge portion of the substrate.

Abstract: In a plasma processing chamber, a method for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The method includes providing first RF power to the chuck. The method also includes providing an edge ring RF voltage control arrangement, which is coupled to the edge ring to provide second RF power to the edge ring. The second RF power being delivered to the edge ring has a frequency of about 20 KHz to about 10 MHz, resulting in the edge ring having an edge ring potential. The method further includes generating a plasma within the plasma processing chamber to process the substrate, the substrate being processed while the edge ring RF voltage control arrangement is configured to control the second RF power to the edge ring such that a predefined potential difference is maintained between the edge ring and the substrate.

Abstract: An antenna adapted to apply uniform electromagnetic fields to a volume of gas and including radiating elements connected in parallel with evenly distributed input terminals for receiving electromagnetic energy into the antenna and output terminals for grounding. In the illustrative embodiment, the antenna has three radiating elements connected in parallel. Each radiating element is a conductor wound in a circular shape with the same diameter. Each radiating element is connected to the input terminal on one end and an output terminal on the other. The input terminal of the second element is 120° rotated counterclockwise from the first and the input terminal of the third is rotated by 120° counterclockwise from the second. The ground terminals of each radiating elements are located in the same manner as the input terminals. Each element is feed by a feeder coil.

Abstract: A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

Abstract: A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna for the source is a planer coil having at least two windings with the gap between the windings variable or modulated to control the antenna inductance around the antenna. The antenna has a plurality of, for example three, high inductance segments as a result of the conductor windings being closely spaced alternating with low inductance segments as a result of the conductor windings being widely spaced. The antenna and a shield are part of a plasma source.

Abstract: A plasma processing system for generating plasma to process at least a wafer. The plasma processing system may include a first coil for conducting a first current for sustaining at least a first portion of the plasma. The plasma processing system may also include a second coil for conducting a second current for sustaining at least a second portion of the plasma. The plasma processing system may also include a power source for powering the first current and the second current. The plasma processing system may also include a parallel circuit for adjusting one of the amperage of the first current and the amperage of the second current. The parallel circuit may be electrically coupled between the power source and at least one of the first coil and the second coil. The parallel circuit may include an inductor and a variable capacitor electrically connected in parallel to each other.

Abstract: A plasma generating device provided with a plasma generating chamber (10) and a high-frequency antenna (1) arranged in the chamber (10) for generating inductively coupled plasma by applying a high-frequency power to a gas in the chamber (10) from the antenna (1). The antenna (1) is a low-inductance antenna formed of a first portion (11) extending from the outside of the chamber (10) into the chamber (10), and a plurality of second portions (12) diverging from an inner end (11e) of the first portion (11) in an electrically parallel fashion, and having a termination (12e) directly connected to the inner wall of the grounded chamber (10). The surface of the antenna (1) is coated with an electrically insulating material. Frequency of the high-frequency power applied to the antenna may be in a range from 40 MHz to hundreds of megahertz.

Abstract: An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure in the plasma process chamber.

Abstract: A plasma processing apparatus for a very large area using a dual frequency is provided.

Abstract: A plasma processing apparatus, comprising: a RF driving electrode (25) and a passive electrode (22) mounted face to face; a first grounded ring (23) surrounding the passive electrode (22) and insulated from it, a second grounded ring (26) surrounding the RF driving electrode (25) and insulated from it; the RF driving electrode (25) is connected with a first RF source (271) and a second RF source (272) respectively; a first impedance adjusting element is connected in series between the passive electrode (22) and the ground. The plasma processing apparatus overcomes a shortcoming that plasma energy can only be changed over among several certain isolated values, and thus technical processes with different plasma density requirements can be realized in one and the same reaction chamber.

Abstract: A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.

Abstract: A plasma processing device comprising a chamber (1) for accommodating therein a substrate (11), a high-frequency power supply (5) for generating microwave, and an antenna unit (3) for radiating microwave into the chamber (1). Microwave generated in the power supply (5) is sent to the antenna unit (3) via a waveguide (6). A top plate (4) forming part of a partition wall of the chamber (1) is formed at the upper portion of the chamber (1). A specified annular delay pass unit (2) formed of the same material as that of the top plate (4), for delaying the propagation of microwave, is provided on the outer peripheral portion of the top plate (4). Accordingly, the plasma processing device can restrict an abnormal discharge and the production of the foreign matters.

Abstract: A method of etching a low-k dielectric on, or removing resist from, a substrate. In the method, the substrate is placed in a process zone. An ionized gas is generated in a gas ionization zone above the process zone, by introducing a process gas into a gas ionization zone, maintaining the process gas at a pressure of less than about 0.1 mTorr, and coupling RF energy to the process gas to form an ionized gas. The ionized gas is passed through an ion filter to form a filtered ionized gas. The substrate is exposed to the filtered ionized gas to etch the low-k dielectric layer on the substrate or to remove or clean remnant resist on the substrate.

Abstract: A plasma processing apparatus, for performing a plasma processing on a target substrate by generating an inductively coupled plasma of a processing gas in a depressurized processing chamber, includes: a mounting table; a gas supply unit; a gas exhaust unit; a planar high frequency antenna disposed opposite to the mounting table with a plate-shaped dielectric member therebetween and a shield member covering the high frequency antenna. The high frequency antenna includes an inner antenna element provided at a central portion of a region above the plate-shaped dielectric member and an outer antenna element provided at an edge portion to surround a periphery of the inner antenna element. Further, two ends of each of the antenna elements are open ends and the antenna elements are grounded at central points thereof or points close thereto to resonate at ½ wavelengths of high frequencies from individual high frequency power supplies.

Abstract: A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements.

Abstract: The present invention aims at providing a plasma processing apparatus for performing a plasma processing on a planar substrate body to be processed, the apparatus being capable of generating the plasma with good uniformity and efficiently using the plasma, and having a high productivity. That is, the plasma processing apparatus according to the present invention includes: a vacuum chamber; one or plural antenna supporters (plasma generator supporters) projecting into the internal space of the vacuum chamber; radio-frequency antennas (plasma generators) attached to each antenna supporter; and a pair of substrate body holders provided across the antenna supporter in the vacuum chamber, for holding a planar substrate body to be processed.

Abstract: A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. The antenna has closely spaced conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields while alternating widely spaced conductor segments produce low strength magnetic fields.

Abstract: A complex waveform frequency matching device is disclosed. In various embodiments, the matching device comprises a plurality of radio frequency generators coupled in parallel with one another. Each subsequent one of the plurality of radio frequency generators is configured to produce a harmonic frequency related by an integral multiple to a frequency produced by any lower-frequency producing radio frequency generator, thereby generating a complex waveform. A plurality of frequency splitter circuits is coupled to an output of the plurality of radio frequency generators, and each of a plurality of matching networks has an input coupled to an output of one of the plurality of frequency splitter circuits and an output configured to be coupled to a plasma chamber.

Abstract: An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.

Abstract: A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal.