Abstract: Magnetoelectric multilayer composites comprising alternate layers of a bimetal ferrite wherein one of the metals is zinc and a piezoelectric material for facilitating conversion of an electric field into a magnetic field or vice versa. The preferred composites include cobalt, nickel, or lithium zinc ferrite and PZT films which are arranged in a bilayer or in alternating layers, laminated, and sintered at high temperature. The composites are useful in sensors for detection of magnetic fields (10); sensors for measuring rotation speed, linear speed, or acceleration; read-heads in storage devices by converting bits in magnetic storage devices to electrical signals; magnetoelectric media for storing information; and high frequency devices for electric field control of magnetic devices or magnetic field control of electric devices.

Abstract: A method for making an electronic module includes forming a low temperature co-fired ceramic (LTCC) substrate with at least one capacitive structure embedded therein. Forming the LTCC substrate may include arranging first and second unsintered ceramic layers and the at least one capacitive structure therebetween. The at least one capacitive structure may include a pair of electrode layers, an inner dielectric layer between the pair of electrode layers, and at least one outer dielectric layer adjacent at least one of the electrode layers and opposite the inner dielectric layer. The at least one outer dielectric layer preferably has a dielectric constant less than a dielectric constant of the inner dielectric layer. The unsintered ceramic layers and the at least one capacitive structure may also be heated, and at least one electronic device may be mounted on the LTCC substrate and electrically connected to the at least one embedded capacitive structure.

Abstract: A ceramic capacitor has at least one dielectric layer and at least two electrodes having the dielectric layers therebetween. The dielectric layer includes a sintered body of ceramic grains containing a primary component of a perovskite crystal structure in a form of ABO3 and a ratio A/B of outer portions of the ceramic grains is greater than that of an inner portions thereof.

Abstract: A method of fabricating a thin dielectric film, a thin dielectric film formed according to the method, and a system including the thin dielectric film. The method includes: depositing a ceramic precursor material on a metal sheet, the ceramic precursor material including a mixture comprising ceramic particles and an organic carrier medium; heat treating the ceramic precursor material such that the organic carrier medium is substantially burnt off, and further such that a dielectric layer is formed including ceramic grains formed from the ceramic particles, and having grain sizes between about 100 nm and about 500 nm; depositing a CSD precursor material onto the dielectric layer; and heat treating the CSD precursor material such that organics in the CSD precursor material are substantially burnt off, and further such that a CSD medium is formed from the CSD precursor material including CSD grains substantially filling the voids between the ceramic grains.

Abstract: A BaTiO3-type semiconducting ceramic material which has undergone firing in a reducing atmosphere and re-oxidation, wherein the relative density of the ceramic material after sintering is about 85–90%. A process for producing the semiconducting ceramic material of the present invention and a thermistor containing the semiconducting ceramic material are also disclosed.

Abstract: This invention provides a method for producing a stacked ceramic body that does not require strict control of an oxygen partial pressure in a sintering gas. To produce a stacked ceramic body by alternately stacking dielectric layer and electrode layers, an unsintered stacked body 2 is prepared by alternately stacking unsintered dielectric layers containing a PZT type dielectric material and unsintered electrode layers containing an electrode material, and is sintered in a sintering gas to which a dielectric layer anti-reducing agent 21 and an electrode layer anti-oxidant 22 are introduced. Alternatively, sintering is conducted in a gas containing only the dielectric layer anti-reducing agent 21 or in a gas containing only the electrode layer anti-oxidant 22.

Abstract: A laminate type dielectric device is formed by alternately laminating dielectric ceramic layers and electrode layers and integrally baking the laminate product. The electode layers are mainly made of an electrically conductive base metal material having greater standard Gibbs free energy for the formation of a metal oxide at a baking temperature than that of the ceramic material constituting the dielectric ceramic layers. Segregation of the materials including the electrically conductive base metal material does not occur at portions sandwiched between adjacent positive and negative electrode layers among the dielectric ceramic layers.

Abstract: A laminated type semiconductor ceramic element is provided with good PTC characteristics, low room temperature resistance value and improved withstand voltage of 15V or higher. Semiconductor ceramic layers made from a semiconductor ceramic containing barium titanate as the main component and the element nickel at about 0.2 mol % or less (excluding 0 mol %), and internal electrode layers are superimposed alternately, and an external electrode is formed so as to be connected electrically with the internal electrode layers. The production method comprises the steps of obtaining a laminated product of semiconductor material layers containing a barium titanate as the main component and about 0.2 mol % or less (excluding 0 mol %) of the element nickel, and internal electrode layers, obtaining a laminated sintered compact by reduction baking of the laminated product, forming an external electrode electrically connected with the internal electrodes of the laminated sintered compact, and re-oxidization processing.

Abstract: An electrical component includes a stack of layers. The layers include dielectric layers and electrode layers. The dielectric layers have a resistance with a positive temperature coefficient. The electrode layers are electrically conductive and are interspersed among the dielectric layers. At least one of the electrode layers includes a constituent that is comprised of a base metal and that is at least partially coated with a protective layer. The protective layer includes a material that slows oxidation of the base metal.

Abstract: In manufacturing a monolithic ceramic electronic part, an oxide of a conductive metal component contained in internal electrodes is mixed with a ceramic green sheet used for forming a ceramic layer by burning. Therefore, even if the conductive metal component diffuses and dissolves from the internal electrodes, the occurrence of non-uniformity in the concentration of the oxide of the conductive metal component is suppressed over the entire region of a laminate, and thus the entire laminate can be sufficiently uniformly sintered.

Abstract: A piezoelectric ceramic composition including three components, Pb(Zn1/3Nb2/3)O3, PbTiO3, and PbZrO3, and having a basic composition formula of Pb(Zn1/3Nb2/3)xZryTizO3, where 0.90<x+y+z<1.0, exhibits excellent piezoelectric characteristics and heat resistance and has a low sintering temperature of about 900° C., a coupling coefficient Kp not less than 0.50, and a Curie temperature not lower than 300° C. A piezoelectric device using this composition may employ inexpensive silver and silver-palladium alloys containing a high percentage of silver as material of an internal electrode, thus being inexpensive and having excellent characteristics.

Abstract: A method for making a monolithic piezoelectric ceramic element having high mechanical strength, excellent piezoelectricity, and high reliability is disclosed. The method includes the steps of applying a conductive paste including a conductor containing Ag as a principal ingredient to ceramic green sheets comprising a piezoelectric ceramic material containing a Pb compound, stacking the ceramic green sheets to form a laminate, and firing the laminate in an atmosphere with an oxygen concentration of about 90% by volume or more during the heating period and with an oxygen concentration of about 5% to 15% by volume during the isothermal period and during the cooling period.

Abstract: A method of manufacturing a piezoelectric ceramic device having excellent piezoelectric characteristics and high reliability is described. The method includes the steps of coating conductive paste containing Ag as a main component on each of a plurality of ceramic green sheets each containing a piezoelectric ceramic material, laminating the plurality of ceramic green sheets to form a laminate, and burning the laminate under an atmospheric condition in which the oxygen concentrations in a heating process and a retention process are about 21% by volume or more, and the oxygen concentration in a cooling process is about 0.05% by volume to 3% by volume.

Abstract: A process for producing a ceramic member for bonding, which comprises: a first step of preparing a lower layer paste with the use of a first mixture comprising nickel, tungsten and molybdenum, applying the lower layer paste to a surface of a ceramic base which is a sintered ceramic, and drying the resultant coating layer to form a lower layer after the applying; a second step of preparing an upper layer paste with the use of a second mixture comprising one of nickel and nickel oxide and at least one of copper, copper oxide, manganese and manganese oxide, applying the upper layer paste to the lower layer, and drying the resultant coating layer to form an upper layer after the applying; and a third step of heating the lower layer and the upper layer to bake the lower layer and the upper layer.

Abstract: A laminated type semiconductor ceramic element is provided with good PTC characteristics, low room temperature resistance value and improved withstand voltage of 15V or higher. Semiconductor ceramic layers made from a semiconductor ceramic containing barium titanate as the main component and the element nickel at about 0.2 mol % or less (excluding 0 mol %), and internal electrode layers are superimposed alternately, and an external electrode is formed so as to be connected electrically with the internal electrode layers. The production method comprises the steps of obtaining a laminated product of semiconductor material layers containing a barium titanate as the main component and about 0.

Abstract: A method of manufacturing a piezoelectric ceramic device having excellent piezoelectric characteristics and high reliability is described. The method includes the steps of coating conductive paste containing Ag as a main component on each of a plurality of ceramic green sheets each containing a piezoelectric ceramic material, laminating the plurality of ceramic green sheets to form a laminate, and burning the laminate under an atmospheric condition in which the oxygen concentrations in a heating process and a retention process are about 21% by volume or more, and the oxygen concentration in a cooling process is about 0.05% by volume to 3% by volume.

Abstract: A BaTiO3-type semiconducting ceramic material which has undergone firing in a reducing atmosphere and re-oxidation, wherein the relative density of the ceramic material after sintering is about 85-90%. A process for producing the semiconducting ceramic material of the present invention and a thermistor containing the semiconducting ceramic material are also disclosed.

Abstract: A ceramic member for bonding comprises: a ceramic base which is a sintered ceramic; and a metallic layer formed on the ceramic base by metallization, wherein the metallic layer comprises 70 to 85% by weight of at least one of tungsten and molybdenum and 0.5 to 8.5% by weight of nickel.

Abstract: The invention includes a method for forming a ceramic composition. Materials comprising lead, zirconium, titanium and bismuth are combined together to form a mixture. At least one of the materials is provided in the mixture as a nanophase powder. The mixture is then densified to form the ceramic composition. The invention also includes a method for forming a dense ferroelectric ceramic composition. Lead, zirconium, titanium and bismuth are combined together to form a mixture. The mixture is then densified to form a ferroelectric ceramic composition having a density of greater than or equal to 95% of a theoretical maximum density for the composition. A predominate portion of the composition has a grain size of less than or equal to about 500 nanometers. The invention also includes a ferroelectric ceramic composition comprising lead, zirconium, titanium and bismuth.

Abstract: Disclosed is a method for fabricating a piezoelectric/electrostrictive thick film, using a seeding layer. On a substrate is formed the seeding layer which is prepared from a ceramic sol solution or a ceramic paste, both identical or similar in composition to the piezoelectric/electrostrictive film. The ceramic paste is prepared from a mixture of a ceramic oxide powder, which has a particle size of 5 &mgr;m or less and is prepared from Pb and Ti-based piezoelectric/electrostrictive elements by a non-explosive oxidation-reduction combustion reaction at 100-500° C., and a ceramic sol solution in water or an organic solvent, identical or similar in composition to the ceramic oxide powder. Then, the seeding layer is subjected to an after-treatment. A piezoelectric/electrostrictive film is directly formed on the seeding layer. Alternatively, a piezoelectric/electrostrictive film, separately formed and sintered, is attached on the seeding layer.

Abstract: An apparatus and a process for producing a laminate for electronic parts such as ceramic capacitors. After a predetermined pattern for forming an internal conductive layer is formed on a self-supporting green sheet which contains inorganic powder and an organic binder, the self-supporting green sheet is taken up by a columnar roll and laminated. At this point, the position of the same pattern on the green sheet G2 of the next cycle to be laminated adjacently onto the green sheet G1 of the previous cycle as the above pattern with respect to the predetermined pattern on the green sheet G1 taken up by the columnar roll is determined.

Abstract: Disclosed is a monolithic ceramic capacitor composed of plural dielectric ceramic layers made of a ceramic material comprising strontium titanate and bismuth oxide or the like, plural inner electrodes made of a base metal material comprising nickel or a nickel alloy, which are laminated via the dielectric ceramic layer to produce the electrostatic capacity of the capacitor, and outer electrodes as electrically connected with the inner electrodes. Each dielectric ceramic layer in the capacitor contains a reduction inhibitor, for example aMO+bMnO2+cB2O3+(100−a−b−c)SiO2 (where M is at least one of Mg, Sr, Ca and Ba; and a, b and c each are, in % by mol, 10≦a≦60, 5≦b≦20 and 20≦c≦35). In producing the capacitor, the laminate of dielectric ceramic layers may be fired in a neutral or reducing atmosphere without being reduced.

Abstract: A dielectric ceramic which exhibits small variation in dielectric constant, allows use of a base metal, can be fired in a reducing atmosphere and which is suitable for constituting a dielectric ceramic layer for, e.g., a laminated ceramic capacitor is obtained by firing barium titanate powder in which the c-axis/a-axis ratio in the perovskite structure is about 1.000 or more and less than about 1.003 and the amount of OH groups in the crystal lattice is about 2.0 wt. % or less. The barium titanate powder starting material preferably has a maximum particle size of about 0.3 &mgr;m or less and an average particle size of about 0.05-0.15 &mgr;m. Each particle of the barium titanate powder preferably comprises a low-crystallinity portion and a high-crystallinity portion, the diameter of the low-crystallinity portion being about 0.5 times or more the particle size of the powder.

Abstract: A method of production of a dielectric ceramic composition having at least a main component of Ba2TiO3, a second subcomponent including at least one compound selected from SiO2, MO (where M is at least one element selected from Ba, Ca, Sr, and Mg), Li2O, and B2O3, and other subcomponents, comprising the step of: mixing in said main component at least part of other subcomponents except for said second subcomponent to prepare a pre-calcination powder, calcining the pre-calcination powder to prepare a calcined powder, and mixing at least said second subcomponent in said calcined powder to obtain the dielectric ceramic composition having molar ratios of the subcomponents to the main component of predetermined ratios. As the other subcomponents, there is a third subcomponent including at least one compound selected from V2O5, MoO3, and WO3. A ratio of the third subcomponent to 100 moles of the main component is preferably 0.01 to 0.1 mole.

Abstract: The specification describes a phase shifting microstrip device in which the ground plane electrode is formed on a substrate surface and a film of ferroelectric material with a thickness less than 200 &mgr;m is formed over the ground plane electrode. The microstrip electrode is formed over the film of ferroelectric material to produce a microstrip device with an operating voltage of less than 200 volts.

Abstract: A dielectric ceramic which exhibits small variation in dielectric constant, allows use of a base metal, can be fired in a reducing atmosphere and which is suitable for constituting a dielectric ceramic layer for, e.g., a laminated ceramic capacitor is obtained by firing barium titanate powder in which the c-axis/a-axis ratio in the perovskite structure is about 1.000 or more and less than about 1.003 and the amount of OH groups in the crystal lattice is about 2.0 wt. % or less. The barium titanate powder starting material preferably has a maximum particle size of about 0.3 &mgr;m or less and an average particle size of about 0.05-0.15 &mgr;m. Each particle of the barium titanate powder preferably comprises a low-crystallinity portion and a high-crystallinity portion, the diameter of the low-crystallinity portion being about 0.5 times or more the particle size of the powder.

Abstract: The process for the production of a laminated electronic part containing a major component as represented by general formula: X(MgaZn(1−a))xSiOx+2—YAl2O3—ZSrTiO3 (where symbol a is defined by: 0.1≦a≦0.8; and symbol x is defined by: ≦x≦1.5); and an additive component comprised of a compound containing one or more elements selected from Nb, Ta and W; wherein a mole percent ratio of magnesium zinc silicate, (MgaZn(1−a))xSiOx+2, (X), to alumina, Al2O3, (Y), and strontium titanate, SrTiO3, (Z), each of which constitutes said major component, is set to be located in a region enclosed by a polygon having apexes at points A, B, C and D, as defined below, in a three-component composition map: A (94.9, 0.1, 5.0) B (85.0, 10.0, 5.0) C (65.0, 10.0, 25.0) D (65.0, 0.1, 34.9); and the additive component is contained at a rate of 0.01 to 0.

Abstract: A multilayer ceramic capacitor comprises dielectric ceramic layers and conductive layers, the dielectric ceramic layers including core-shell structured ceramic particles. The ceramic particles disposed nearer to the conductive layers have shell portions having thickness larger than those of the ceramic particles disposed farther from the conductive layers.

Abstract: A monolithic ceramic component has inner electrodes which are thin having a thickness of from about 0.2 &mgr;m to 0.7 min, and thereby, delamination is inhibited even though ceramic layers are thin, having a thickness up to about 3 &mgr;m. The mean particle size of the ceramic grains of the ceramic layers is up to 0.5 &mgr;m, so that the concavities and convexities at the interfaces between the inner electrodes and the ceramic layers can be reduced. Preferably, metal powder in a paste used to form the inner electrodes has a mean particle size of from about 10 to 200 nm, and thereby, the metal filling ratio and the smoothness of the inner electrodes can be enhanced, and the coverage can be improved.

Abstract: A shape formed multi-laminate transducer which conforms to nonlinear dependent shaped geometries and the shape forming process for producing the nonlinear dependent shaped multilaminate transducer is presented. The shape forming process includes the cutting of the tape cast material to a predetermined two-dimensional shape and then pressing the cut material to form the desired three-dimensional nonlinear dependent shape. After shape forming, the sample is sintered, metalized, poled, and made into an acoustical device such as a transducer. The production of such a device by using tape cast material allows designers to easily vary the shape of the product as well as to be able to vary the properties within simply by exploiting the lamination method associated with tape casting. As such, a designer is able to design and manufacture a transducer optimized to meet the requirements of a particular application.

Abstract: A method for assembling an ultrasonic transducer, first produces a plurality of plates of piezoelectric material. Then the plates are bonded together through use of a polymeric matrix comprising a polymer and intermixed particles having determined dimensional parameters, the particles acting to separate the plates by predetermined distances that are dependent upon the determined dimensional parameters. Preferred particles are polystyrene spheres. A second embodiment produces a plurality of strips of green piezoelectric ceramic material, each strip including a layer of a fugitive material. The strips are then placed in a stack and the stack is fired to convert the green piezoelectric ceramic material into densified ceramic plates. The firing acts to drive off said second fugitive material and to leave voids. The voids are then backfilled with a polymeric material to create a unified structure.

Abstract: A low-fire, low-dielectric ceramic composition is disclosed. The ceramic composition comprises a mixture of finely divided particles consisting of 30-90% by volume of Ca—Ba—Al—Zn—Si glass and 70-10% by volume of oxides, which can be densified up to 95% at temperatures of 800-1000° C. The sintered body produced thereby exhibits a dielectric constant in the range of 6-10 and a dielectric loss in the range of 0.01%-0.5% at 1 MHz. The ceramic composition can be processed with organic solvent, polymeric binder and plasticizer to produce a green sheet which is co-firable with high electrical conductivity metal such as gold, silver, silver-palladium and copper.