Abstract: Disclosed is a plasma processing apparatus 10 including a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, and an induction coil 16. The induction coil 16 includes a first induction coil 17 installed so as to overlap a central region R1 of the dielectric member 13, and a second induction coil 18 installed so as to overlap a peripheral region R2 outside the central region R1 of the dielectric member 13. The cover 14 has a first gas hole 14c formed at a position overlapping the central region R1 and a second gas hole 14d formed at a position overlapping the peripheral region R2. The gas introduction path 15 has a first gas introduction path 15a communicating with the first gas hole 14c and a second gas introduction path 15b communicating with the second gas hole 14d.

Abstract: A method and a system for adjustable coating on a substrate using a magnetron sputtering apparatus are provided. The method comprises the steps of providing a magnetron assembly which comprises a plurality of magnets attached to a plurality of yokes and a plurality of actuating mechanisms (208), each operatively coupled to at least one of the plurality of yokes. The method further comprises automatically determining individual positions of each of the plurality of yokes of the magnetron assembly on the basis of at least one parameter, and adjusting individually positions of each of the plurality of yokes of the magnetron assembly in accordance with the automatically determined individual positions.

Abstract: A feedback system for controlling properties of a single layer or multiple layer stack is applied on a substrate by means of a vacuum coating process controlled by a plurality of process controlling means. The system includes at least one monitoring device for at least implementing at least two distinct measurement techniques for determining measurement signals at each of a plurality of locations spatially distributed over the coated substrate; at least one processing unit adapted for at least receiving the measurement signals; and a controller for at least providing actuation signals for actuating the plurality of process controlling means.

Abstract: An adjustment-determining method includes obtaining a mathematical model relating an operating parameter of the deposition line to a quality function defined from a quality measurement of a stack of thin layers deposited by the deposition line on a transparent substrate; obtaining a value of the quality function from a value of the quality measurement measured at the outlet of the deposition line on a stack of thin layers deposited by the deposition line on a substrate while the deposition line was set so that an operating parameter had a current value; and automatically determining by the mathematical model an adjustment value for the current value of the operating parameter serving to reduce a difference that exists between the value obtained for the quality function and a target value selected for the quality function for the stack of thin layers.

Abstract: A fabrication system for fabricating an IC is provided which includes a processing tool, a computation device and a FDC system. The processing tool includes an electrode and an RF sensor to execute a semiconductor manufacturing process to fabricate the IC. The RF sensor wirelessly detects the intensity of the RF signal. The computation device extracts statistical characteristics based on the detection of the intensity of the RF signal. The FDC system determines whether or not the intensity of the RF signal meets a threshold value or a threshold range according to the extracted statistical characteristics. When the detected intensity of the RF signal exceeds the threshold value or the threshold range, the FDC system notifies the processing tool to adjust the RF signal or stop tool to check parts damage.

Abstract: A feeding apparatus includes a measurement unit measuring an attribute of a sheet fed by a feeding unit to obtain an attribute value; a notification control unit making a notification of information representing sheet types in accordance with the attribute value obtained by the measurement unit; a selection unit accepting selection of a sheet type after the notification; a setting unit setting the sheet type selected by the selection unit as a type of the sheet; a history storage unit storing history information serving as information of sheet types accepted once by the selection unit; and a reference storage unit storing reference information serving as reference attribute values. The notification of the information represents the sheet types in a notification order decided based on the reference attribute values stored in the history information and the attribute value obtained by the measurement unit.

Abstract: A method for preparing a CeOx coating on a surface of a substrate includes depositing a CeOx coating on the surface by means of a reactive magnetron sputtering from a pure cerium target. The CeOx coating can be transparent for visible light. A method for reducing the adhesion of a tissue material such as from a human to a surface of a medical instrument, for reducing the water condensation and improving the heat transfer performance of a heat exchanger surface of a substrate, and for reducing corrosion of a surface of a substrate includes depositing a CeOx coating on the substrate by means of a reactive magnetron sputtering from a pure cerium target. This provides an environmentally friendly preparation of the CeOx coating with no need for organic solvents or volatile organic compounds. The CeOx coating has good hydrophobicity, enhanced hardness, exceptionally high wear resistance, and superior thermal stability.

Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.

Abstract: Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

Abstract: Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein.

Abstract: Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein.

Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Abstract: A vacuum pump system comprises: a vacuum pump including a suction port, an exhaust port, and a pressure detection section configured to detect a gas pressure in a gas flow path through which gas sucked through the suction port flows to the exhaust port; and an arithmetic device configured to perform arithmetic processing for a state of a deposition substance in the gas flow path based on the gas pressure detected by the pressure detection section.

Abstract: A method of analyzing film on a substrate comprises receiving surface profile data obtained from measurements of a plurality of discrete regions on a substrate, the plurality of discrete regions comprising one or more film layers; extracting a plurality of parameters from the received surface profile data, the plurality of parameters comprising one or more parameters of the one or more film layers of each of the plurality of discrete regions, wherein the extracting is based on a predetermined pattern for the plurality of the discrete regions on the substrate; and displaying a user interface.

Abstract: A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

Abstract: Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

Abstract: A method of infiltrating a fiber structure with a coating and a matrix material includes connecting a wave guide to a fiber structure comprising a plurality of fibers, applying vibration to the fiber structure to separate adjacent fibers at contact points, and depositing a coating on a surface of each of the fibers including contact point surfaces where adjacent fibers have been separated.

Abstract: A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.

Abstract: An apparatus and method for determining the health of a plasma system by igniting a plasma within a plasma confining volume generate an ignition signal with an ignition circuit and apply the ignition signal between a biased region and a grounded region in the vicinity of the plasma confining volume. A parameter in the ignition circuit is sensed, and the sensed parameter is compared to a first parameter threshold. A condition associated with the plasma confining volume is determined if the sensed parameter differs from the first voltage threshold, and a corrective action can be taken.

Abstract: A method of processing a material layer on a substrate is provided. The method includes delivering RF power from an RF power source through a match network to a showerhead of a capacitively coupled plasma chamber; igniting a plasma within the capacitively coupled plasma chamber; measuring one or more phase angles of one or more harmonic signals of the RF power relative to a phase of a fundamental frequency of the RF power; and adjusting at least one phase angle of at least one harmonic signal of the RF power relative to the phase of the fundamental frequency of the RF power based on the one or more phase angle measurements.

Abstract: Sputtering systems and methods are provided. In an embodiment, a sputtering system includes a chamber configured to receive a substrate, a sputtering target positioned within the chamber, and an electromagnet array over the sputtering target. The electromagnet array includes a plurality of electromagnets.

Abstract: A cathode assembly for a physical vapor deposition (PVD) system includes a target holder and a thickness detector. The target holder is for holding a target, in which the target has a first major surface and a second major surface. The first major surface and the second major surface are respectively proximal and distal to the target holder. The thickness detector is disposed on the target holder. At least one portion of the first major surface is exposed to the thickness detector for allowing the thickness detector to detect the thickness of the target through the first major surface.

Abstract: The method comprises the steps of measuring (E0) a voltage signal at the terminals of at least one photovoltaic module of the installation (100) with a sampling frequency greater than or equal to 50 kHz and, from the measured voltage signal, determining an initial voltage preceding the appearance of the arc and voltage values during the electric arc; evaluating values of an electric current produced by the photovoltaic installation during the electric arc; time integration (E7) of the product of arc voltage values equal to the difference between the voltage values during the arc and the initial voltage, determined in step A), and current values evaluated in step B), in order to determine the energy of the arc.

Abstract: The invention relates to a method including the steps of measuring (EO) an electric current signal produced by the apparatus (100) at a sampling rate no lower than 50 kHz, and, from the measured current signal, determining (E3) an initial value (10) of the current before the occurrence of an electric arc, determining (E5) current values (Iarcj) during the electric arc, evaluating (E6) arc voltage values from the current values determined during the arc and from the initial value of the current, integrating (E7) over time the product of the arc voltage values evaluated by the determined current values, in order to determine the energy of the arc.

Abstract: In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

Abstract: A design of an integrated computational element (ICE) includes (1) specification of a substrate and multiple layers, their respective target thicknesses and refractive indices, refractive indices of adjacent layers being different from each other, and a notional ICE fabricated based on the ICE design being related to a characteristic of a sample, and (2) identification of one or more critical layers of the ICE layers, an ICE layer being identified as a critical layer if potential variations of its thickness or refractive index due to expected fabrication variations cause ICE performance degradation that exceeds a threshold degradation, otherwise the ICE layer being identified as a non-critical layer. At least one critical layer of the ICE is formed using two or more forming steps to form respective two or more sub-layers of the critical layer, and at least one non-critical layer of the ICE is formed using a single forming step.

Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

Abstract: There is provided a method for inspecting a substrate including: irradiating an illumination light onto a first surface or a second surface opposite to the first surface, of a substrate in which a pattern having a periodicity and extending from the first surface to an inside of the substrate is formed in the first surface, the illumination light having a permeability to permeate the substrate to a predetermined depth; detecting a light reflected from or transmitted through the substrate due to irradiation of the illumination light; and inspecting the substrate by utilizing information based on the periodicity of the pattern obtained from detection of the light reflected from or transmitted through the substrate.

Abstract: A thin film formation method is provided, by which needless film formation due to trial film formation is omitted and film formation efficiency can be improved. This invention is a method for sputtering targets to form a film A having an intended film thickness of T1 as the first thin film on a substrate and monitor substrate held and rotated by a rotation drum and, subsequently, furthermore sputtering the targets used in forming the film A to form a film C having an intended film thickness of T3 as the second thin film, which is another thin film having the same composition as the film A; comprising film thickness monitoring steps S4 and S5, a stopping step S7, an actual time acquisition step S8, an actual rate calculating step S9 and a necessary time calculating step S24.

Abstract: A method of processing a substrate includes: sputtering target material for a first amount of time using a first plasma formed from an inert gas and a first amount of power; determining a first counter, based on a product of a flow rate of the inert gas, the first amount of power, and the first amount of time; sputtering a metal compound material for a second amount of time using a second plasma formed from a process gas comprising a reactive gas and an inert gas and a second amount of power; determining a second counter based on a product of a flow rate of the process gas, the second amount of power, and the second amount of time; determining a third counter; and depositing a metal compound layer onto a predetermined number of substrates, wherein a deposition time for each substrate is adjusted based on the third counter.

Abstract: Provided is an oxide-containing magnetic material sputtering target wherein the oxides have an average grain diameter of 400 nm or less. Also provided is a method of producing an oxide-containing magnetic material sputtering target. The method involves depositing a magnetic material on a substrate by the PVD or CVD method, then removing the substrate from the deposited magnetic material, pulverizing the material to obtain a raw material for the target, and further sintering the raw material. An object is to provide a magnetic material target, in particular, a nonmagnetic grain-dispersed ferromagnetic sputtering target capable of suppressing discharge abnormalities of oxides that are the cause of particle generation during sputtering.

Abstract: Described herein are devices and techniques for thermocompression bonding. A device can include a housing, a platform, and a plasma jet. The housing can define a chamber. The platform can be located within the chamber and can be proximate a thermocompression chip bonder. The plasma jet can be located proximate the platform. The plasma jet can be movable about the platform. The plasma jet can include a nozzle arranged to direct a plasma gas onto the platform. Also described are other embodiments for thermocompression bonding.

Abstract: Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

Abstract: An ionization device includes: a plasma generating device for generating metastable particles and/or ions of an ionization gas in a primary plasma region; a field generating device for generating a glow discharge in a secondary plasma region; an inlet for supplying a gas to be ionized into the secondary plasma region; and a further inlet for supplying the metastable particles and/or the ions of the ionization gas into the secondary plasma region. A mass spectrometer includes such an ionization device and a detector downstream of the outlet of the ionization device for the mass-spectrometric analysis of the ionized gas.

Abstract: Techniques herein include systems and methods for fine control of temperature distribution across a substrate. Such techniques can be used to provide uniform spatial temperature distribution, or a biased spatial temperature distribution to improve plasma processing of substrates and/or correct characteristics of a given substrate. Embodiments include a plasma processing system with temperature control. Temperature control systems herein include a primary heating mechanism to heat a substrate, and a secondary heating mechanism that precisely modifies spatial temperature distribution across a substrate being processed. At least one heating mechanism includes a digital projection system configured to project a pattern of electromagnetic radiation onto or into a substrate, or through the substrate and onto a substrate support assembly.

Abstract: A carbon film forming method, that introduces a raw material gas including carbon into a film forming chamber, ionizes the gas by using an ion source, accelerates the ionized gas, and radiates the ionized gas to a surface of a substrate to form a carbon film on the surface of the substrate, includes forming the carbon film while rotating a first magnet, which is provided on the opposite side of the substrate across a region in which the raw material gas is ionized so as to be eccentric and/or inclined with respect to a central axis connecting the center of the ion source and a position corresponding to the center of the substrate held by the holder, in a circumferential direction.

Abstract: The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.

Abstract: A backing plate for a sputter target includes a target receiving part for receiving a target to be sputtered, and a structure for exposing the target receiving part through the backing plate.

Abstract: A consumable part, for use inside a chamber where plasma is used to process a semiconductor substrate, includes a body and a trigger feature. The body has a surface configured to be exposed to the plasma during processing in the chamber, and the trigger feature is integrated within the body. The trigger feature includes a void disposed under the surface of the body, where the void is configured to become visible when the surface is eroded from exposure to the plasma over time. The void becoming visible is an identifiable feature on the surface of the body that indicates a wear level for the consumable part, the wear level being associated with an amount of processing time remaining for the consumable part.

Abstract: The magnetron sputtering source comprises a target mount for mounting a target arrangement comprising a sputtering target having a sputtering surface; a primary magnet arrangement for generating close to said sputtering surface a magnetron magnetic field describing one tunnel-like closed loop having an arc-shaped cross-section; a secondary magnet arrangement for generating close to said sputtering surface an auxiliary magnetic field having a substantially arc-shaped cross-section, said auxiliary magnetic field superposing with said magnetron magnetic field and being substantially inversely polarized with respect to said magnetron magnetic field; and an adjustment unit for adjusting said auxiliary magnetic field. The vacuum treatment apparatus comprises such a magnetron sputtering source.

Abstract: A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.

Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

Abstract: Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector.

Abstract: A sputtering apparatus includes a shutter arranged having a first surface on a side of a substrate holder and a second surface on the opposite side, a first shield having a third surface including a portion facing the second surface and a fourth surface on the opposite side, a second shield having a fifth surface including a portion facing end portions of the shutter and the first shield, and a gas supply unit supplying a gas into a space arranged outside the first shield to communicate with a first gap between the second surface of the shutter and the third surface of the first shield. The second shield includes a protruding portion on the fifth surface to form a second gap between the protruding portion and the end portion of the shutter.

Abstract: Disclosed herein are embodiments of a novel method and system to analyze films using plasma to produce spectral data and analyzing the spectral data.

Abstract: A gas intake device of magnetron sputtering vacuum chamber and a magnetron sputtering apparatus with the gas intake device, the gas intake device of magnetron sputtering vacuum chamber comprises a gas mixing box configured to receive and mix the gas, a gas intake box configured to introduce the gas into a vacuum chamber, and a connecting pipe configured to connect with the two boxes, the gas mixing box has one or more gas intake pipes. The gas intake device can increase the distribution uniformity after the gas enters inside the vacuum chamber, effectively decrease the impact force to the precision equipment(s) in the vacuum chamber, and extend the service life of the apparatus.

Abstract: The clamp apparatus of the present disclosure includes a clamp member configured to contact a substrate accommodating container from an upper side and fix the substrate accommodating container to a predetermined position when a cover provided on a front surface of the substrate accommodating container is opened/closed, a driving mechanism configured to drive the clamp member; a casing configured to cover the driving mechanism, a suction port configured to communicate with the casing, an exhaust chamber provided near the casing, and a fan provided inside the exhaust chamber.

Abstract: A method of electroplating metal onto a transparent conductive oxide layer is described. The method comprises the steps of a) electroplating a zinc or zinc oxide seed layer directly onto the transparent conductive oxide layer and thereafter, b) electroplating one or more additional metal layers over the zinc layer. The one or more additional metal layers may include a cobalt strike layer electroplated over the zinc or zinc oxide seed layer and another metal layer such as copper, electroplated over the cobalt strike layer.

Abstract: A method of controlling a reactive deposition process and a corresponding assembly and/or apparatus are described. The method includes providing power to a cathode with a power supply, providing a voltage set point to the power supply, receiving a power value correlating the power provided to the cathode, and controlling a flow of a process gas in dependence of the power value to provide a closed loop control for the power value.