Abstract: A method of forming a memory device includes forming a dielectric structure over a wafer. A bottom electrode via is formed in the dielectric structure. A plasma deposition process is performed to deposit a bottom electrode layer over the bottom electrode via and performing the plasma deposition process includes off-axis rotating a magnet over the wafer to control plasma of the plasma deposition process. A memory material layer and a top electrode layer are formed over the bottom electrode layer. The bottom electrode layer, the memory material layer, and the top electrode layer are patterned to respectively form a bottom electrode, a memory layer, and a top electrode.

Abstract: There is provided a substrate processing method of a substrate processing apparatus. The substrate processing apparatus includes at least two targets, magnet-moving mechanisms disposed in one-to-one correspondence with the at least two targets, each of the magnet-moving mechanisms being configured to reciprocate a magnet in a first direction on a back surface of each target, and a substrate moving mechanism configured to move a substrate in a second direction orthogonal to the first direction. The method includes causing the magnet-moving mechanisms to reciprocate the magnets at different phases with each other.

Abstract: A plasma vapor deposition (PVD) chamber used for depositing material includes an apparatus for influencing ion trajectories during deposition on a substrate. The apparatus includes at least one annular support assembly configured to be externally attached to and positioned below a substrate support pedestal and a magnetic field generator affixed to the annular support assembly and configured to radiate magnetic fields on a top surface of the substrate. The magnetic field generator may include a plurality of symmetrically spaced discrete permanent magnets or may use one or more electromagnets to generate the magnetic fields.

Abstract: An etching apparatus includes a substrate holder configured to hold a substrate, a first ion source that generates first ions and irradiates the substrate with the first ions such that the first ions are incident on the substrate in the substrate holder at a first incident angle, and a second ion source that generates second ions and irradiates the substrate with the second ions such that the second ions are incident on the substrate at a second incident angle different from the first incident angle. A controller is provided that controls at least one of the first incident angle and the second incident angle by moving at least one of the first ion source and the second ion source.

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a cover ring for use in a process chamber includes: an annular body that includes an upper surface and a lower surface, an inner lip extending radially inward and downward from the annular body, and a plurality of protrusions extending downward from the inner lip and disposed at regular intervals along the inner lip, wherein lowermost surfaces of the plurality of protrusions together define a planar substrate contact surface.

Abstract: An optical device is provided. The optical device includes an optical device substrate having a first surface; and an optical device film disposed over the first surface of the optical device substrate. The optical device film is formed of titanium oxide. The titanium oxide is selected from the group of titanium(IV) oxide (TiO2), titanium monoxide (TiO), dititanium trioxide (Ti2O3), Ti3O, Ti2O, ?-TiOx, where x is 0.68 to 0.75, and TinO2n-1, where n is 3 to 9, the optical device film has a refractive index greater than 2.72 at a 520 nanometer (nm) wavelength, and a rutile phase of the titanium oxide comprises greater than 94 percent of the optical device film.

Abstract: A pulse generator is disclosed. The pulse generator includes a DC source; a plurality of switches, a transformer; and a pulsing output. The pulse generator can be coupled with a plasma chamber. The pulsing output outputs high voltage pulses having a peak-to-peak voltage greater than 1 kV and a voltage portion between consecutive high voltage bipolar pulses that has a negative slope that substantially offsets the voltage reduction on a wafer within a plasma chamber due to an ion current. The resulting voltage at the wafer may be substantially flat between consecutive pulses.

Abstract: A movable-side magnet is provided to a movable portion in a vacuum chamber. A drive unit is provided outside the vacuum chamber, and drives the movable portion by exerting magnetic force on the movable-side magnet. The drive unit has a first magnet, a second magnet, and a moving mechanism (moving member). The first magnet exerts magnetic force of attracting the movable-side magnet. The second magnet is provided to be adjacent to the first magnet, and exerts magnetic force of repelling the movable-side magnet. The moving mechanism integrally moves the first magnet and the second magnet.

Abstract: A magnet assembly is disclosed for steering ions used in the formation of a material layer upon a substrate during a pulsed DC physical vapour deposition process. Apparatus and methods are also disclosed incorporating the assembly for controlling thickness variation in a material layer formed via pulsed DC physical vapour deposition. The magnet assembly comprises a magnetic field generating arrangement for generating a magnetic field proximate the substrate and means for rotating the ion steering magnetic field generating arrangement about an axis of rotation, relative to the substrate. The magnetic field generating arrangement comprises a plurality of magnets configured to an array which extends around the axis of rotation, wherein the array of magnets are configured to generate a varying magnetic field strength along a radial direction relative to the axis of rotation.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: A film forming apparatus for forming a film on a substrate by using a magnetron sputtering method. The film forming apparatus includes: a substrate holder configured to hold a substrate; a target holder configured to hold a target made of a ferromagnetic material to face the substrate holder; a magnet provided on a surface of the target holder opposite to the substrate holder, and configured to leak a magnetic field to a front surface of the target held by the target holder that is a surface close to the substrate holder; and a magnetic field strength measurement device configured to measure a strength of the magnetic field.

Abstract: A semiconductor manufacturing apparatus according to an embodiment includes a stage, a backing plate and an earth shield. The stage is configured to hold a substrate that a film is to be deposited on. The backing plate faces the stage and is configured such that a target containing a film deposition material is to be joined. The earth shield has an opening configured to enclose the target, and a plurality of through holes provided over a whole circumference of a circumferential part of the opening.

Abstract: A method of making a thin film can include bombarding a substrate with first ions supplied from a first ion beam; and sputtering from a metal sputtering target substantially simultaneously with the bombardment to deposit a metal-ion film onto the substrate, wherein the method is performed without applied heat, and the metal sputtering target comprises one or more of a metal, a transition metal, a semi-metal, alloys thereof and combinations thereof.

Abstract: Layers for a bipolar plates are disclosed, as well as bipolar plates including the layers and fuel cells and/or electrolyzers including the bipolar plates. The layer may include a homogeneous or heterogeneous solid metallic solution or compound which either contains a first chemical element from the group of the noble metals in the form of iridium; or contains a first chemical element from the group of the noble metals in the form of iridium and a second chemical element from the group of the noble metals in the form of ruthenium. The layer may also include at least one further nonmetallic chemical element from the group consisting of nitrogen, carbon, boron, fluorine, and hydrogen.

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

Abstract: A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.

Abstract: A deposition system is provided capable of cleaning itself by removing a target material deposited on a surface of a collimator. The deposition system in accordance with the present disclosure includes a substrate process chamber. The deposition includes a substrate pedestal in the substrate process chamber, the substrate pedestal configured to support a substrate, a target enclosing the substrate process chamber, and a collimator having a plurality of hollow structures disposed between the target and the substrate, a vibration generating unit, and cleaning gas outlet.

Abstract: In an embodiment, a magnetic assembly includes: an inner permeance annulus; and an outer permeance annulus connected to the inner permeance annulus via magnets, wherein the outer permeance annulus comprises a peak region with a thickness greater than other regions of the outer permeance annulus.

Abstract: An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

Abstract: In a magnetron sputtering reaction space a magnetron magnetic field is generated. A further magnetic field is generated in the reaction space whereby a resultant magnetic field has a directional component parallel to a target plane which is larger than the directional component of the magnetron magnetic field parallel to the target plane in the reaction space.

Abstract: An object of the present invention is to provide an IGZO sputtering target capable of improving uniformity for at least one property selected from the number of microcracks in the structure, the number of pores in the sintered body structure, and surface roughness. The IGZO sputtering target according to the present invention has an oxide sintered body, the oxide sintered body comprising indium (In), gallium (Ga), zinc (Zn) and unavoidable impurities, wherein, on a surface of the oxide sintered body, a lightness difference ?L* satisfies ?L*<3.0, in which the ?L* is obtained by subtracting lightness Lc*at a central portion on the surface from lightness Le* at a position of 10 mm from an end portion to the central portion side on the surface, and wherein the oxide sintered body has a relative density of 97.0% or more.

Abstract: The invention relates to a method for producing substrates having a plasma coated surface made of a dielectric coating material in a vacuum chamber, having an AC-powered plasma device, comprising moving a substrate relative to the plasma device by means of a movement device along a curve, and depositing coating material on a surface of the substrate in a coating region along a trajectory lying on the surface of the substrate using the plasma device.

Abstract: A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Abstract: Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.

Abstract: An apparatus and a method for coating workpieces with thermal barrier coatings. A manipulator shaft is guided here through a duct equipped with telescopic segments into the process chamber. The invention permits a particularly compact configuration of the plant.

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

Abstract: In one aspect, a method includes forming a coil in a coil layer, performing planarization on the coil layer, and depositing a magnetoresistance (MR) element on the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element. In another aspect, a magnetic field sensor includes a substrate, a planarized coil layer comprising a coil on the substrate, a magnetoresistance (MR) element in contact with the planarized coil layer, and a capping layer deposited over the MR element and the planarized coil layer. No dielectric material is between the planarized coil layer and the MR element.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

Abstract: Disclosed is a method for preparing a high-entropy alloy composites reinforced by diamond particles, belonging to the technical field of metal composites preparation. A vacuum coating preparation equipment equipped with an in-situ heating sample stage is used to perform a treatment of high-entropy alloy metallizing coating on the surface of diamond particles to generate modified diamond particles, where the alloy of the coating includes any four, five or six elements among seven elements of Ti, Zr, Hf, Nb, Ta, W and Mo in an equal atomic proportion. The obtained coating generates carbide film in-situ with the surface layer of diamond particles, while the high-entropy alloy covers the carbide film, ensuring a strong bond with the diamond, and the high-entropy alloy composites reinforced by diamond particles are finally prepared.

Abstract: The present disclosure relates to a magnetic circuit assembly of a bone conduction speaker. The magnetic circuit assembly may generate a first magnetic field. The magnetic circuit assembly may include a first magnetic element, and the first magnetic element may generate a second magnetic field. The magnetic circuit may further include a first magnetic guide element and at least one second magnetic element. The at least one second magnetic element may be configured to surround the first magnetic element and a magnetic gap may be configured between the second magnetic element and the first magnetic element. A magnetic field strength of the first magnetic field within the magnetic gap may exceed a magnetic field strength of the second magnetic field within the magnetic gap.

Abstract: A target measurement device is provided. The target measurement device includes a fixing ring, a main body, and a transceiver. The fixing ring has a first surface. The main body is over the first surface of the fixing ring. The transceiver is coupled to the main body. The transceiver is at least movable between a center of the fixing ring to an edge of the fixing ring from a top view perspective. A method for measuring a target is also provided.

Abstract: A plasma processing apparatus includes a balun having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, a vacuum container, a first electrode electrically connected to the first output terminal, a second electrode electrically connected to the second output terminal, and a connection unit configured to electrically connect the vacuum container and ground, the connection unit including an inductor.

Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

Abstract: A novel metal oxide or a novel sputtering target is provided. A sputtering target includes a conductive material and an insulating material. The insulating material includes an oxide, a nitride, or an oxynitride including an element M1. The element M1 is one or more kinds of elements selected from Al, Ga, Si, Mg, Zr, Be, and B. The conductive material includes an oxide, a nitride, or an oxynitride including indium and zinc. A metal oxide film is deposited using the sputtering target in which the conductive material and the insulating material are separated from each other.

Abstract: A deposition system provides a feature that may reduce costs of the sputtering process by increasing a target change interval. The deposition system provides an array of magnet members which generate a magnetic field and redirect the magnetic field based on target thickness measurement data. To adjust or redirect the magnetic field, at least one of the magnet members in the array tilts to focus on an area of the target where more target material remains than other areas. As a result, more ion, e.g., argon ion bombardment occurs on the area, creating more uniform erosion on the target surface.

Abstract: Techniques for depositing a functionally integrated coating structure on a substrate are provided. An example method according to the disclosure includes receiving the substrate into a process chamber of a multi-process ion beam assisted deposition system, disposing the substrate in a first zone including a first evaporator species and a first ion beam, wherein the first evaporator species is Aluminum Oxide (Al2O3), disposing the substrate in a second zone including a second evaporator species and a second ion beam, wherein the second evaporator species is Yttrium Oxide (Y2O3), and disposing the substrate in a third zone including a third evaporator species and a third ion beam, wherein the third evaporator species is Yttrium Fluoride (YF3).

Abstract: A rotation driving mechanism includes a turntable configured to rotate about a first axis, and a rotating plate disposed along a circumferential direction of the turntable and configured to rotate about a second axis independently of a rotation of the turntable. A driving plate is coaxially disposed with the first axis and is rotatable differently in rotational direction and rotational speed from the rotation of the turntable. A trajectory plate is fixed to the driving plate and disposed in the vicinity of the second axis of the rotating plate. The trajectory plate includes a rolling trajectory groove in a surface. The trajectory groove has a curved shape in a plan view. A horizontal rotating member is coupled to and fixed to the rotating plate and engaged with the rolling trajectory groove. The horizontal rotating member rotates the rotating plate by moving and rolling through the rolling trajectory groove.

Abstract: There is provided a magnetic drive apparatus having a magnetic drive mechanism driven by a magnet. The magnetic drive apparatus includes a magnetizing yoke disposed in the magnetic drive apparatus at a standby position and configured to be moved to magnetize the magnet and a magnetizing yoke holder configured to hold the magnetizing yoke at a magnetizing position for magnetizing the magnet when the magnetic drive mechanism is stopped.

Abstract: Processing chamber components and methods of manufacture of same are provided herein. In some embodiments, a component part body includes a component part body having a base plane and at least one textured surface region, wherein the at least one textured surface region comprises a plurality of independent surface features having a first side having at least a 45 degree angle with respect to the base plane. In at least some embodiments, the textured surface includes a plurality of independent surface features which are pore free.

Abstract: A an apparatus includes a processing chamber configured to house a workpiece, a target holder in the processing chamber, a first magnetic element positioned over a backside of the target holder, a first arm assembly connected to the first magnetic element, a rotational shaft, and a first hinge mechanism connecting the rotational shaft and the first arm assembly.

Abstract: An arcing detection system detects arcing within a semiconductor processing cleanroom environment. The arcing detection system includes an array of microphones positioned within the cleanroom environment. The microphones receive soundwaves within the cleanroom environment and generate audio signals based on the sound waves. The arcing system includes a control system that receives the audio signals from the microphones. The control system analyzes the audio signals and detects arcing within the cleanroom environment based on the audio signals. The control system can adjust a semiconductor process in real time responsive to detecting arcing.

Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Abstract: A deposition mask includes an effective part in which a plurality of openings are provided, and an outer frame part surrounding the effective part. The effective part includes an outer peripheral area that is adjacent to the outer frame part, and a central area which is surrounded by the outer peripheral area and has a thickness larger than a thickness of the outer peripheral area.

Abstract: Some embodiments provide a magnetron sputtering apparatus including a vacuum chamber within which a controlled environment may be established, a target comprising one or more sputterable materials, wherein the target includes a racetrack-shaped sputtering zone that extends longitudinally along a longitudinal axis and comprises a straightaway area sandwiched between a first turnaround area and a second turnaround area, a gas distribution system that supplies a first gas mixture to the first turnaround area and/or the second turnaround area and supplies a second gas mixture to the straightaway area, wherein the first gas mixture reduces a sputtering rate relative to the second gas mixture. In some cases, the first gas mixture includes inert gas having a first atomic weight and the second gas mixture includes inert gas having a second atomic weight, wherein the second atomic weight is heavier than the first atomic weight.

Abstract: The present invention relates to a magnetic recording medium including a substrate; an underlayer laminated upon the substrate; and a magnetic layer laminated upon the underlayer, wherein the underlayer includes a first underlayer containing a compound represented by a following general formula: MgO(1-X), where X is within a range of 0.07 to 0.25, the magnetic layer includes a first magnetic layer containing an alloy having a L10 structure, and the alloy having the L10 structure includes B, and the first underlayer is in contact with the first magnetic layer.

Abstract: An atomic layer deposition system for depositing thin layers of material onto a common substrate includes a deposition head shaped to define a conical interior cavity into which a conical deposition drum is disposed. Together, the deposition head and the deposition drum define a narrow gap adapted to receive the common substrate, the spacing of the narrow gap being adjustable through acute axial displacement of the deposition head relative to the deposition drum. A pair of rollers advances the substrate through the gap in a first direction, as the deposition head rotates in the opposite direction at a precise rate. Each of the deposition head and deposition drum includes a plurality of separate fluid channels which enable gasses utilized in the deposition process to be delivered into and exhausted from the narrow gap, with the delivery of inert gas on both sides of the substrate effectively creating an air bearing.

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.

Abstract: The disclosure provides an anti-corrosion conductive film and methods of making and using thereof. The anti-corrosion conductive film is formed by sequentially forming an anti-corrosion protective layer, a stress transition layer and a conducting layer on the surface of a substrate by deposition through a high-low pulse bias alternation method. The anti-corrosion conductive film is a nano-multilayer anti-corrosion conductive film exhibiting excellent corrosion resistance and conductivity. The anti-corrosion conductive film has great application prospects in the fields of metal polar plates of fuel cells, ground grid equipment of power transmission lines, and the like.

Abstract: A rotary cathode assembly includes a cathode having a tube shape and defining a hollow center, a shield surrounding the cathode, the shield defining an access opening that exposes a portion of the cathode, and a rotary magnet subassembly disposed within the hollow center of the cathode. The rotary magnet subassembly includes a first magnetic component having a first magnetic field strength and a second magnetic component having a second magnetic field strength. The first magnetic field strength is greater than the second magnetic field strength. Characteristically, the first magnet component and the second magnetic component are rotatable between a first position in which the first magnetic component faces the access opening and a second position in which the second magnetic component faces the access opening. A coating system including the rotary cathode assembly is also provided.