Glow Discharge Sputter Deposition (e.g., Cathode Sputtering, Etc.) Patents (Class 204/192.12)
  • Patent number: 10692708
    Abstract: This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: June 23, 2020
    Assignee: KEIHIN RAMTECH CO., LTD.
    Inventors: Hiroshi Iwata, Toshiyuki Nedu, Yuta Takakuwa, Naoya Okada, Ippei Sato, Naonori Shibata, Keiichi Hashimoto
  • Patent number: 10692707
    Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
    Type: Grant
    Filed: April 10, 2013
    Date of Patent: June 23, 2020
    Assignee: EVATEC AG
    Inventors: Jurgen Weichart, Stanislav Kadlec
  • Patent number: 10676827
    Abstract: The present invention pertains to a multilayer tubular article, to processes for the manufacture of said multilayer tubular article and to uses of said multilayer tubular article in upstream applications for conveying hydrocarbons from a well to a floating off-shore unit via a bottom platform.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: June 9, 2020
    Assignee: SOLVAY SPECIALITY POLYMERS ITALY S.P.A.
    Inventors: Nicasio Edoardo Messina, Marco Colladon, Paula Cojocaru, Vincenzo Arcella, Marco Apostolo, Francesco Maria Triulzi
  • Patent number: 10667370
    Abstract: There is provided herein controllable power and lighting system. There is particularly provided a method for the arrangement and automatic control of one or more power consuming devices, including one or more light emitting diode (LED)-containing lighting devices, and optionally one or more non-LED based devices, wherein the devices are adapted to be powered by 3-phase AC power within the present systems.
    Type: Grant
    Filed: March 2, 2017
    Date of Patent: May 26, 2020
    Assignee: INTELLIGENT GROWTH SOLUTIONS LIMITED
    Inventors: Henry Aykroyd, David Scott
  • Patent number: 10657999
    Abstract: A plasma CVD device includes a chamber (102), an anode (104), a cathode (103), a holding portion which holds a substrate to be deposited (101) a plasma wall (88) an anti-adhesion member (91) which is arranged between a first gap (81) between the anode and the plasma wall and a first inner surface (102a) of the chamber and a pedestal (92) which is arranged between the anti-adhesion member and a back surface of the anode and which is electrically connected to the anode. The maximum diameter of each of the first gap, a second gap (82) between the anode and the anti-adhesion member, a third gap (83) between the back surface of the anode and the pedestal, a fourth gap (84) between the plasma wall and the anti-adhesion member and a fifth gap (85) between the anti-adhesion member and the pedestal is equal to or less than 4 mm.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: May 19, 2020
    Assignee: ADVANCED MATERIAL TECHNOLOGIES, INC.
    Inventors: Kouji Abe, Toshiyuki Watanabe, Masafumi Tanaka, Kohei Okudaira, Hiroyasu Sekino, Yuuji Honda
  • Patent number: 10648073
    Abstract: The present invention relates to a sputtering method, which is placing and fixing a fiber Bragg grating base material in a vacuum sputtering cavity, then pumping in a first gas or a second gas or both in the sputtering cavity and maintaining at the best set temperature, pressure and electric field intensity, sputtering a Cr-, Zr-, Ti- or AlTi-contained metal compound target with a sputtering current to the surface of the fiber grating base material to form a high-temperature-resistant film containing said metal nitride, which can enable the sensor to tolerate a working environment with a temperature of over 500° C. and still maintain its efficiency.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: May 12, 2020
    Assignee: NATIONAL KAOHSIUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Chia-Chin Chiang, Tso-Sheng Hsieh, Hsiang-Chang Hsu
  • Patent number: 10640865
    Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: May 5, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joon-Myoung Lee, Yong-Sung Park, Whan-Kyun Kim, Se-Chung Oh, Young-Man Jang
  • Patent number: 10636935
    Abstract: An ion implantation system having a grid assembly. The system includes a plasma source configured to provide plasma in a plasma region; a first grid plate having a plurality of apertures configured to allow ions from the plasma region to pass therethrough, wherein the first grid plate is configured to be biased by a power supply; a second grid plate having a plurality of apertures configured to allow the ions to pass therethrough subsequent to the ions passing through the first grid plate, wherein the second grid plate is configured to be biased by a power supply; and a substrate holder configured to support a substrate in a position where the substrate is implanted with the ions subsequent to the ions passing through the second grid plate.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: April 28, 2020
    Assignee: Intevac, Inc.
    Inventors: Babak Adibi, Moon Chun
  • Patent number: 10626494
    Abstract: In one embodiment of the invention, a protective film formation chamber for forming a carbon protective film on a magnetic film includes: a gas introduction part which introduces a source gas to a vacuum vessel; a discharge electrode having a discharge surface at a position facing a substrate conveyed to a predetermined position in the vacuum vessel; a plasma formation part which applies voltage between the discharge surface and the substrate conveyed to the predetermined position; a permanent magnet being provided on a back side of the discharge surface and having a first magnet and a second magnet provided such that their magnetic poles facing the discharge surface are opposite to each other; and a no-erosion-portion mask being provided in parallel to the discharge surface and covering an area of the discharge surface surrounding a portion facing the permanent magnet.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: April 21, 2020
    Assignee: CANON ANELVA CORPORATION
    Inventors: Hiroshi Yakushiji, Masahiro Shibamoto, Kazuto Yamanaka, Shogo Hiramatsu, Susumu Karino
  • Patent number: 10618840
    Abstract: A method for producing a reflector element and a reflector element are disclosed. In an embodiment the method includes depositing a layer sequence on a substrate, wherein the layer sequence includes at least one mirror layer and at least one reactive multilayer system and igniting the reactive multilayer system in order to activate heat input in the layer sequence.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: April 14, 2020
    Assignees: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V., Friedrich-Schiller-Universitaet Jena
    Inventors: Mark Schürmann, Stefan Schwinde, Robert Müller, Norbert Kaiser
  • Patent number: 10622193
    Abstract: A plasma etching apparatus is for etching a substrate and includes at least one chamber, a substrate support positioned within the at least one chamber, and a plasma production device for producing a plasma for use in etching the substrate. The plasma production device comprises an electrically conductive coil which is positioned within the at least one chamber, and the coil is formed from a metallic material which can be sputtered onto an interior surface of the at least one chamber.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: April 14, 2020
    Assignee: SPTS Technologies Limited
    Inventors: Stephen R Burgess, Anthony Paul Wilby
  • Patent number: 10601388
    Abstract: A method is for depositing by pulsed DC reactive sputtering an additive containing aluminium nitride film containing at least one additive element selected from Sc, Y, Ti, Cr, Mg and Hf. The method includes depositing a first layer of the additive containing aluminium nitride film onto a film support by pulsed DC reactive sputtering with an electrical bias power applied to the film support. The method further includes depositing a second layer of the additive containing aluminium nitride film onto the first layer by pulsed DC reactive sputtering with no electrical bias power applied to the film support or with an electrical bias power applied to the film support which is lower than the electrical bias power applied during the sputter deposition of the first layer, where the second layer has the same composition as the first layer.
    Type: Grant
    Filed: October 5, 2016
    Date of Patent: March 24, 2020
    Inventors: Stephen R Burgess, Rhonda Hyndman, Amit Rastogi, Scott Haymore, Constanine Fragos
  • Patent number: 10597772
    Abstract: Embodiments relate to a sputter chamber with a configurable surface in communication with a target material. A control system is in communication with the chamber and functions to prepare an alloy film by changing a composition of the configurable surface. As ingress gas is introduced to the chamber to interact with the changed composition, the interaction causes a reaction that produces an alloy film.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: March 24, 2020
    Assignee: International Business Machines Corporation
    Inventors: Hans-Juergen Eickelmann, Thorsten Muehge, Erik Rueger, Markus Schmidt
  • Patent number: 10600961
    Abstract: A vanadium dioxide (VO2)-based threshold switch device exhibiting current-controlled negative differential resistance (S-type NDR), an electrical oscillator circuit based on the threshold switch device, a wafer including a plurality of said devices, and a method of manufacturing said device are provided. The VO2-based threshold switch device exhibits volatile resistance switching and current-controlled negative differential resistance from the first time a sweeping voltage or voltage pulse is applied across the device without being treated with an electroforming process. Furthermore, the device exhibits substantially identical switching characteristics over at least 103 switching operations between a high resistance state (HRS) and a low resistance state (LRS), and a plurality of threshold switch devices exhibits a threshold voltage VT spreading of less than about 25%.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: March 24, 2020
    Assignee: HRL Laboratories, LLC
    Inventors: Wei Yi, Kenneth K. Tsang, Stephen K. Lam, Xiwei Bai, Jack A. Crowell, Elias A. Flores
  • Patent number: 10586690
    Abstract: A magnetron sputtering device, a magnetron sputtering apparatus, and a magnetron sputtering method are provided. The magnetron sputtering device includes: a target material bearing portion, configured to bear a target material thereon; a magnet bearing section, configured to bear a magnet thereon and to be capable of driving the magnet to perform reciprocating motion along a predetermined path with respect to the target material bearing portion; a limit sensor, configured to determine an end-point position of the predetermined path along which the magnet performs reciprocating motion; the end-point position determined by the limit sensor can be adjusted along the predetermined path during a working procedure of the magnetron sputtering device.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: March 10, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD
    Inventors: Zhongpeng Tian, Xuewei Gao, Lei Xiao, Jianhua Du
  • Patent number: 10571632
    Abstract: A waveguide and methods for manufacture can include a silicon wafer and a silicon substrate on the wafer that can be patterned into a silicon waveguide. A cladding can be deposited on the wafer and that waveguide using a plasma enhanced chemical vapor deposition (PECVD) process. When a PECVD process is used, the cladding portions that are in contact with that waveguide and in the immediate vicinity can have a lower density, and a lower refractive index n of less than (n<1.3). The lower uniform cladding refractive index can be uniform from the waveguide surfaces out to approximately one micrometer from the waveguide. This can further in result in an increased difference between the refractive index of the silicon waveguide and the adjacent lower refractive index cladding portions, which can further result in greater light confinement within the waveguide (i.e. reduced losses during transmission).
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: February 25, 2020
    Assignee: United States of America as represented by Secretary of the Navy
    Inventors: Joanna N. Ptasinski, Stephen D. Russell
  • Patent number: 10573499
    Abstract: A method of extracting and accelerating ions is provided. The method includes providing a ion source. The ion source includes a chamber. The ion source further includes a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice, the first and second hollow cathodes being disposed adjacently in the chamber. The ion source further includes a first ion accelerator between and in communication with the first plasma exit orifice and the chamber. The first ion accelerator forms a first ion acceleration cavity. The ion source further includes a second ion accelerator between and in communication with the second plasma orifice and the chamber. The second ion accelerator forms a second ion acceleration cavity. The method further includes generating a plasma using the first hollow cathode and the second hollow cathode.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: February 25, 2020
    Assignees: AGC FLAT GLASS NORTH AMERICA, INC., ASAHI GLASS CO., LTD., AGC GLASS EUROPE
    Inventors: John Chambers, Peter Maschwitz
  • Patent number: 10563297
    Abstract: A method of manufacturing an article comprises providing an article. An ion assisted deposition (IAD) process is performed to deposit a second protective layer over a first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a porosity of less than 1%. The second protective layer seals a plurality of cracks and pores of the first protective layer.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: February 18, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Biraja P. Kanungo, Vahid Firouzdor
  • Patent number: 10555412
    Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.
    Type: Grant
    Filed: May 10, 2018
    Date of Patent: February 4, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Leonid Dorf, Olivier Luere, Rajinder Dhindsa, James Rogers, Sunil Srinivasan, Anurag Kumar Mishra
  • Patent number: 10546732
    Abstract: A sputter deposition source for sputter deposition in a vacuum chamber is described. The source includes a wall portion of the vacuum chamber; a target providing a material to be deposited during the sputter deposition; an RF power supply for providing RF power to the target; a power connector for connecting the target with the RF power supply; and a conductor rod extending through the wall portion from inside of the vacuum chamber to outside of the vacuum chamber, wherein the conductor rod is connected to one or more components inside of the vacuum chamber and wherein the conductor rod is connected to the RF power supply outside of the vacuum chamber to generate a defined RF return path through the conductor rod.
    Type: Grant
    Filed: November 5, 2013
    Date of Patent: January 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Stefan Keller, Uwe Schüβler, Dieter Haas, Stefan Bangert
  • Patent number: 10546973
    Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.
    Type: Grant
    Filed: February 1, 2019
    Date of Patent: January 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Nag B. Patibandla, Rongjun Wang, Daniel Lee Diehl, Vivek Agrawal, Anantha Subramani
  • Patent number: 10541663
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: January 21, 2020
    Assignee: QORVO US, INC.
    Inventors: Kevin McCarron, John Belsick
  • Patent number: 10529546
    Abstract: A method of extracting and accelerating ions is provided. The method includes providing a ion source. The ion source includes a chamber. The ion source further includes a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice, the first and second hollow cathodes being disposed adjacently in the chamber. The ion source further includes a first ion accelerator between and in communication with the first plasma exit orifice and the chamber. The first ion accelerator forms a first ion acceleration cavity. The ion source further includes a second ion accelerator between and in communication with the second plasma orifice and the chamber. The second ion accelerator forms a second ion acceleration cavity. The method further includes generating a plasma using the first hollow cathode and the second hollow cathode.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: January 7, 2020
    Assignees: AGC FLAT GLASS NORTH AMERICA, INC., ASAHI GLASS CO., LTD., AGC GLASS EUROPE
    Inventors: John Chambers, Peter Maschwitz
  • Patent number: 10514311
    Abstract: A process pressure transmitter system includes a process pressure transmitter housing, a process pressure sensor in the process pressure transmitter housing, a flange face in the process pressure transmitter housing and an isolation diaphragm on the flange face. A first capillary passageway carries a first fill fluid from the isolation diaphragm to the process pressure sensor. A process seal diaphragm couples to a process fluid of the industrial process. A second capillary passageway carries a second fill fluid from the process seal diaphragm to the isolation diaphragm. A diamond like carbon (DLC) coating coats the process seal diaphragm.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: December 24, 2019
    Assignee: ROSEMOUNT INC.
    Inventors: Zhang Xiaoang, Vincent Cline
  • Patent number: 10515782
    Abstract: A system and method for rapid atomic layer etching (ALET) including a pulsed plasma source, with a spiral coil electrode, a cooled Faraday shield, a counter electrode disposed at the top of the tube, a gas inlet and a reaction chamber including a substrate support and a boundary electrode. The method includes positioning an etchable substrate in a plasma etching chamber, forming a product layer on the surface of the substrate, removing a portion of the product layer by pulsing a plasma source, then repeating the steps of forming a product layer and removing a portion of the product layer to form an etched substrate.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: December 24, 2019
    Assignee: UNIVERSITY OF HOUSTON SYSTEM
    Inventors: Vincent M. Donnelly, Demetre J. Economou
  • Patent number: 10483095
    Abstract: A method of extracting and accelerating ions is provided. The method includes providing a ion source. The ion source includes a chamber. The ion source further includes a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice, the first and second hollow cathodes being disposed adjacently in the chamber. The ion source further includes a first ion accelerator between and in communication with the first plasma exit orifice and the chamber. The first ion accelerator forms a first ion acceleration cavity. The ion source further includes a second ion accelerator between and in communication with the second plasma orifice and the chamber. The second ion accelerator forms a second ion acceleration cavity. The method further includes generating a plasma using the first hollow cathode and the second hollow cathode.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: November 19, 2019
    Assignees: AGC FLAT GLASS NORTH AMERICA, INC., ASAHI GLASS CO., LTD., AGC GLASS EUROPE
    Inventors: John Chambers, Peter Maschwitz
  • Patent number: 10475622
    Abstract: This disclosure is generally directed to controlling energy distribution to a load, especially when anomalous events are detected. Benefits of the present disclosure include minimizing the length of a discharge event, mitigating the effects of an electrical discharge, and to improvements in inducing the ignition of a plasma. Methods and systems consistent with the present disclosure improve the control of operating conditions within a chamber and improve the ability for more rapidly initiating plasma ignition in a chamber.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: November 12, 2019
    Assignee: Advanced Energy Industries, Inc.
    Inventors: Josh Pankratz, Craig Linn
  • Patent number: 10468238
    Abstract: Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.
    Type: Grant
    Filed: August 18, 2016
    Date of Patent: November 5, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Anantha K. Subramani, Hanbing Wu, Wei W. Wang, Ashish Goel, Srinivas Guggilla, Lavinia Nistor
  • Patent number: 10468236
    Abstract: A compact cylindrical vacuum chamber made from a dielectric ceramic or glass wrapped with a cylindrical electrode connected to an RF source make a hollow cathode RF plasma source. The dielectric cylinder is used as the vacuum container with the conductive electrode outside the vacuum region to excite plasma inside. A gas is supplied by a gas source at low flow on one end of the cylinder and after being excited exhausts into a connected vacuum chamber carrying excited metastables and radicals. RF power is applied to the electrode to excite the plasma via the hollow cathode effect. This remote RF plasma source can be used to create ions, electrons, excited metastables, and atomic radicals for use downstream depending on choices of gas, pressure, flow rates, RF power and frequency, and extraction electrodes.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: November 5, 2019
    Assignee: XEI Scienctific, Inc.
    Inventor: Ronald A. Vane
  • Patent number: 10461731
    Abstract: A current fluctuating due to a load fluctuation is limited to protect a semiconductor switch. A protection circuit includes a switch circuit that turns on when a predetermined conduction voltage is applied thereto, and a sub-reactance circuit having a predetermined reactance value is connected in parallel to a main reactance circuit through which a high frequency current generated by a semiconductor switch flows. When the switch circuit is turned on, the main reactance circuit and the sub-reactance circuit are connected in parallel, and a high frequency current flows through this parallel connection circuit. The impedance value of the parallel connection circuit is set to be larger than the impedance value of the main reactance circuit so that the current is limited due to the turning on of the switch circuit, and thus, the semiconductor switch is protected.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: October 29, 2019
    Assignee: ULVAC, INC.
    Inventors: Kenya Nakashima, Dougo Oohashi, Yoshinori Miyano, Masayuki Kaida
  • Patent number: 10453676
    Abstract: A method of manufacturing a semiconductor device includes: preparing a substrate processing apparatus including a substrate process chamber having a plasma-generation space where a nitrogen-containing gas is plasma-exited and a process space where a substrate is mounted in communication with the plasma-generation space, an inductive coupling structure configured by a coil and an impedance matching circuit, wherein electric field combining the coil and the circuit has a length of an integer multiple of a wavelength of an high-frequency power, and a table to mount the substrate under a lower end of the coil; mounting the substrate on the table; supplying the nitrogen-containing gas into the chamber; starting a plasma excitation of the nitrogen-containing gas by applying the high-frequency power to the coil; and nitriding a surface of the substrate with active species containing a nitrogen element at an internal pressure of the chamber ranging from 1 to 100 Pa.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: October 22, 2019
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventor: Masanori Nakayama
  • Patent number: 10453728
    Abstract: In one embodiment, a chamber is provided that includes a chamber body and a lid defining an interior volume, a frame within the interior volume, the frame sized to receive a plurality of substrates in a first orientation, and a rotational drive assembly coupled to the frame for rotating the frame and flipping each of the plurality of substrates to a second orientation that is different than the first orientation.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: October 22, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kyung-Tae Kim, Su Ho Cho, Tsunehiko Kitamura, Shinobu Abe, Shuran Sheng
  • Patent number: 10443129
    Abstract: An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: October 15, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Yoshinobu Mori, Akira Okabe
  • Patent number: 10446792
    Abstract: A packaging structure includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A display device includes a substrate, a display layer, and a packaging structure. The packaging structure further includes at least one inorganic layer and at least one passivation layer. The at least one passivation layer includes a halogen-containing amorphous solid oxide thin film. The amorphous solid oxide thin film in the at least one passivation layer has a crosslinked-polyhedra-network structure. A method for fabricating a display device includes providing a substrate, forming a display layer over the substrate, and forming a packaging structure over the display layer with the packaging structure including at least one inorganic layer and at least one passivation layer.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: October 15, 2019
    Assignees: Shanghai Tianma AM-OLED Co., Ltd., Tianma Micro-electronics Co., Ltd.
    Inventors: Zaifeng Xie, Huamin Li, Pei Wu, Xiongjie Jin
  • Patent number: 10443121
    Abstract: A method of sustained self-sputtering of lithium in a sputtering station having a lithium metal target, the method comprising initiating a lithium sputtering reaction in the sputtering station by igniting an initial plasma comprising a majority fraction of inert gas ions and inducing a sustained lithium self-sputtering reaction by reducing supply of an inert gas to the sputtering station under conditions that provide a sustained self-sputtering lithium plasma comprising a majority fraction of lithium ions.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: October 15, 2019
    Assignee: View, Inc.
    Inventor: Martin John Neumann
  • Patent number: 10435783
    Abstract: A target assembly is provided in which an abnormal discharging between a projected portion of a backing plate and a side surface of the target is prevented and also in which a bonding material to bond the target and the backing plate can be surely prevented from seeping to the outside and also which is easy in reusing the backing plate. The target assembly according to this invention having: a target made of an insulating material; and a backing plate bonded to one surface of the target via a bonding material, the backing plate having a projected portion which is projected outward beyond an outer peripheral edge of the target, further has an annular insulating plate. The annular insulating plate: encloses a circumference of the target while maintaining a predetermined clearance to a side surface of the target; and covers that surface of the projected portion.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: October 8, 2019
    Assignee: ULVAC, INC.
    Inventors: Shinya Nakamura, Yoshihiro Ikeda, Yuusuke Miyaguchi, Kazuyoshi Hashimoto, Kengo Tsutsumi, Yoshinori Fujii
  • Patent number: 10436955
    Abstract: The present invention relates to a layer system, comprising a metallic substrate (1) having the following layers applied on a side (A) thereof from the inside to the outside in the specified order: 4) a layer composed of a material selected from among substoichiometric oxides and oxynitrides of titanium and zirconium or from among metals, selected from among titanium, zirconium, molybdenum, platinum, and chromium or an alloy using one of these metals or of at least two of these metals, 5a) a layer composed of a nickel alloy having chromium, aluminum, vanadium, molybdenum, cobalt, iron, titanium, and/or copper as an alloying partner, or composed of a metal selected from among copper, aluminum, chromium, molybdenum, tungsten, tantalum, titanium, platinum, ruthenium, rhodium, and alloys using one of these metals, or of at least two of these metals, or composed of iron, steel or stainless steel, provided the layer may only consist of aluminum if the reflector layer 6) is formed of aluminum and that, in this case,
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: October 8, 2019
    Assignee: ALMECO GMBH
    Inventor: Reinhard Dasbach
  • Patent number: 10438780
    Abstract: A method of extracting and accelerating ions is provided. The method includes providing a ion source. The ion source includes a chamber. The ion source further includes a first hollow cathode having a first hollow cathode cavity and a first plasma exit orifice and a second hollow cathode having a second hollow cathode cavity and a second plasma exit orifice, the first and second hollow cathodes being disposed adjacently in the chamber. The ion source further includes a first ion accelerator between and in communication with the first plasma exit orifice and the chamber. The first ion accelerator forms a first ion acceleration cavity. The ion source further includes a second ion accelerator between and in communication with the second plasma orifice and the chamber. The second ion accelerator forms a second ion acceleration cavity. The method further includes generating a plasma using the first hollow cathode and the second hollow cathode.
    Type: Grant
    Filed: December 18, 2015
    Date of Patent: October 8, 2019
    Assignees: AGC FLAT GLASS NORTH AMERICA, INC., ASAHI GLASS CO., LTD., AGC GLASS EUROPE
    Inventors: John Chambers, Peter Maschwitz
  • Patent number: 10431438
    Abstract: A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface. An object of this invention is to provide a high-quality titanium target for sputtering, in which impurities causing particles and abnormal discharge phenomena are reduced, and which is free from fractures and cracks even during high-rate sputtering, and capable of stabilizing the sputtering characteristics, effectively inhibiting the generation of particles during deposition, and improving the uniformity of deposition.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: October 1, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Shiro Tsukamoto
  • Patent number: 10431440
    Abstract: Methods and apparatus for processing a substrate are disclosed herein. In some embodiments, a process chamber includes: a chamber body defining an interior volume; a substrate support to support a substrate within the interior volume; a plurality of cathodes coupled to the chamber body and having a corresponding plurality of targets to be sputtered onto the substrate; and a shield rotatably coupled to an upper portion of the chamber body and having at least one hole to expose at least one of the plurality of targets to be sputtered and at least one pocket disposed in a backside of the shield to accommodate and cover at least another one of the plurality of targets not to be sputtered, wherein the shield is configured to rotate about and linearly move along a central axis of the process chamber.
    Type: Grant
    Filed: December 20, 2015
    Date of Patent: October 1, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Rongjun Wang, Anantha K. Subramani, Chi Hong Ching, Xianmin Tang
  • Patent number: 10431437
    Abstract: Methods, apparatus and systems for detecting an arc during supplying a plasma process in a plasma chamber with a power are provided. An example plasma power supply includes: a DC source, an output signal generator, a first signal sequence measurement device for measuring a first signal sequence present between the DC source and the output signal generator, a second signal sequence measurement device for measuring a second signal sequence present at an output of the output signal generator, and a controller configured to generate a reference signal sequence based on one of the first and second signal sequences, to compare the reference signal sequence and the other of the first and second signal sequences that has not been used to determine the reference signal sequence, and to generate a detection signal if the reference signal sequence and the other of the first and second signal sequences cross.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: October 1, 2019
    Assignee: TRUMPF Huettinger Sp. z o. o.
    Inventors: Cezary Gapi{right arrow over (n)}ski, Andrzej Gieraltowski, Adam Grabowski, Piotr Lach, Marcin Zelechowski
  • Patent number: 10424468
    Abstract: A sputter device for depositing a layer on a substrate in a vacuum chamber and having a layer property in each point of the substrate surface. The sputter device comprises at least one end block adapted for holding a cylindrical target having a longitudinal axis in a first direction, and a first drive means for providing a rotational movement of the at least one cylindrical target around its longitudinal axis. The sputter device includes a second drive means for applying a translational movement to an end block in a second direction. The first and the second drive means are adapted for, during sputtering, being simultaneously operational in the vacuum chamber. The movement of the first drive means does not impact the uniformity of the layer sputtered on the substrate in the direction on the surface of the substrate corresponding to a perpendicular projection of the second direction onto the substrate.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: September 24, 2019
    Assignee: SOLERAS ADVANCED COATINGS BVBA
    Inventors: Wilmert De Bosscher, Ivan Van De Putte
  • Patent number: 10421876
    Abstract: The present invention provides an electronic or electrical device or component thereof comprising a cross-linked polymeric coating on a surface of the electronic or electrical device or component thereof; wherein the cross-linked polymeric coating is obtainable by exposing the electronic or electrical device or component thereof to a plasma comprising a monomer compound and a crosslinking reagent for a period of time sufficient to allow formation of the cross-linked polymeric coating on a surface thereof, wherein the monomer compound has the following formula: where R1, R2 and R4 are each independently selected from hydrogen, optionally substituted branched or straight chain C1-C6 alkyl or halo alkyl or aryl optionally substituted by halo, and R3 is selected from: where each X is independently selected from hydrogen, a halogen, optionally substituted branched or straight chain C1-C6 alkyl, halo alkyl or aryl optionally substituted by halo; and n1 is an integer from 1 to 27; and wherein the crosslinki
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: September 24, 2019
    Assignee: P2i Ltd
    Inventors: Stephen Richard Coulson, Delwyn Evans, Angeliki Siokou, Clive Telford
  • Patent number: 10418231
    Abstract: A method for reducing the optical loss of the multilayer coating below a predetermined value in a zone by producing coating on a displaceable substrate in a vacuum chamber with the aid of a residual gas using a sputtering device. Reactive depositing a coating on the substrate by adding a reactive component with a predetermined stoichiometric deficit in a zone of the sputtering device. Displacing the substrate with the deposited coating into the vicinity of a plasma source, which is located in the vacuum chamber at a predetermined distance from the sputtering device. The plasma action of the plasma source modifying the structure and/or stoichiometry of the coating, preferably by adding a predetermined quantity of the reactive component to reduce the optical loss of the coating.
    Type: Grant
    Filed: February 13, 2015
    Date of Patent: September 17, 2019
    Assignee: Leybold Optics GmbH
    Inventors: Michael Scherer, Jurgen Pistner, Walter Lehnert, Harro Hagedorn, Gerd Deppisch, Mario Roder
  • Patent number: 10392263
    Abstract: A method of producing a modification of pigments using atomic layer deposition (ALD) in varying electrical resistivity. More specifically, ALD may be used to encapsulate pigment particles with controlled thicknesses of a conductive layer, such as indium tin oxide (ITO). ALD may allow films to be theoretically grown one atom at a time, providing angstrom-level thickness control.
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: August 27, 2019
    Assignee: United States of America as represented by the Adminstrator of NASA
    Inventors: Vivek H Dwivedi, Mark M. Hasegawa
  • Patent number: 10378100
    Abstract: Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: August 13, 2019
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Koji Tsunekawa, Naoki Watanabe, Motomu Kosuda
  • Patent number: 10381202
    Abstract: Embodiments of the invention provide a magnetron and a magnetron sputtering device, including an inner magnetic pole and an outer magnetic pole with opposite polarities. Both the inner magnetic pole and the outer magnetic pole comprise multiple spirals. The spirals of the outer magnetic pole surround the spirals of the inner magnetic pole, and a gap exists therebetween. In addition, the gap has different widths in different locations from a spiral center to an edge. Moreover, both the spirals of the outer magnetic pole and the spirals of the inner magnetic pole follow a polar equation: r=a?n+b(cos ?)m+c(tan ?)k+d, 0<=n<=2, 0<=m<=2, c=0 or k=0. Because the gap between the inner magnetic pole and the outer magnetic pole has the different widths in a spiral discrete direction, width sizes of the gap in the different locations can be changed to control magnetic field strength distribution in a plane, thus adjusting uniformity of a membrane thickness.
    Type: Grant
    Filed: December 31, 2014
    Date of Patent: August 13, 2019
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Yujie Yang, Qiang Li, Guoqing Qiu, Zhimin Bai, Hougong Wang, Peijun Ding, Feng Lv
  • Patent number: 10378102
    Abstract: A magnet unit Mu is disposed inside a target of a cylindrical shape and generates a magnetic field that leaks from a surface of the target such that a line passing through a position in which a vertical component of the magnetic field becomes zero extends along a generating line of the target so as to close like a racetrack shape. The magnet unit is constituted into separate parts of: a first part which respectively forms a corner portion of the racetrack shape at both ends, in the direction of the generating line, of the target; a second part which is respectively disposed on the inside, as seen in the direction of the generating line, of the target, adjacent to the first part; and a third part which is positioned between the second parts.
    Type: Grant
    Filed: January 8, 2016
    Date of Patent: August 13, 2019
    Assignee: ULVAC, INC.
    Inventor: Shuuji Saitou
  • Patent number: 10375811
    Abstract: Certain embodiments described herein are directed to devices, systems and methods that comprise asymmetric induction devices. In some instances, the device can include a plurality of plate electrodes which can be spaced asymmetrically or a plurality of coils which can be spaced asymmetrically.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: August 6, 2019
    Assignee: PerkinElmer Health Sciences, Inc.
    Inventor: Peter J Morrisroe
  • Patent number: 10374153
    Abstract: A method for manufacturing a magnetic random access memory element that allows for improved magnetic element pillar formation in a high density magnetic memory element array. The method allows a magnetic memory element pillar to be formed by ion milling with a lower pillar height for reduced shadowing effect. A memory element seed layer and under-layer are first formed on a substrate and layer of electrically insulating material such as silicon oxide is deposited. A chemical mechanical polishing process is performed, leaving the seed layer and under-layer surrounded by a layer of electrically insulating material having an upper surface that is coplanar with an upper surface of the under-layer. A magnetic memory element pillar is formed over the seed layer and under-layer by depositing the magnetic memory element material, forming a mask over the magnetic memory element material and performing an ion milling process to form a magnetic memory element pillar.
    Type: Grant
    Filed: December 29, 2017
    Date of Patent: August 6, 2019
    Assignee: SPIN MEMORY, INC.
    Inventors: Jorge Vasquez, Bartlomiej Adam Kardasz, Mustafa Pinarbasi, Girish Jagtiani