Superconductor Patents (Class 204/192.24)
  • Patent number: 10985059
    Abstract: A method is provided of forming a superconductor device interconnect structure. The method comprises forming a first dielectric layer overlying a substrate and forming a superconducting interconnect element in the first dielectric layer. The superconducting interconnect element includes a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The superconductor device interconnect structure is moved into a dielectric deposition chamber. The method further comprises performing a cleaning process on a top surface of the first interconnect layer in the dielectric deposition chamber to remove oxidization from a top surface of the first interconnect layer, and depositing a second dielectric layer over the first interconnect layer in the dielectric deposition chamber.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: April 20, 2021
    Assignee: NORTHROP GRUMMAN SYSTEMS CORPORATION
    Inventors: Brian Paul Wagner, Christopher F. Kirby, Michael Rennie, James T. Kelliher, Khyhouth Lim
  • Patent number: 10737222
    Abstract: The present invention provides a preparation method for a composite porous structure, comprising the following steps: step (a): preparing a porous substrate having multiple pores, a first surface and a second surface; and step (b): continuously feeding a cooling fluid to contact the first surface and to flow continuously to the second surface through the pores of the porous substrate, and heating a coating material to multiple molten particles by a heat source and spraying the molten particles onto the second surface of the porous substrate, so as to form a coating layer having multiple micropores on the second surface of the porous substrate and obtain the composite porous structure formed. Besides, also provided is a composite porous structure prepared by the preparation method.
    Type: Grant
    Filed: November 14, 2018
    Date of Patent: August 11, 2020
    Assignee: EXTREMEM, INC.
    Inventors: Yu-Ling Li, Chao-Hsiang Kang
  • Patent number: 10619250
    Abstract: Substrate provided with a plurality of layers, at least one of which includes metal oxides and is topped directly by a metal coating layer that contains at least 8% by weight nickel and at least 10% by weight chromium, the remainder being iron, additional elements and the impurities resulting from the fabrication process, wherein this metal coating layer is topped directly by an anticorrosion coating layer. A corresponding fabrication method is also provided.
    Type: Grant
    Filed: April 4, 2014
    Date of Patent: April 14, 2020
    Assignee: ArcelorMittal
    Inventors: Daniel Chaleix, Eric Silberberg, Bruno Schmitz, Xavier Vanden Eynde, Sergio Pace
  • Patent number: 10349511
    Abstract: The present application relates to a conductive structure body and a manufacturing method thereof. The method for manufacturing the conductive structure body according to an exemplary embodiment of the present application includes forming a metal layer on a substrate and forming a darkening layer on the metal layer, in which the forming of the darkening layer is performed by reactive sputtering using CO2.
    Type: Grant
    Filed: February 11, 2016
    Date of Patent: July 9, 2019
    Assignee: LG CHEM, LTD.
    Inventors: Jin Hyong Lim, Jin Hyuk Min, Ki-Hwan Kim, Chan Hyoung Park, Ilha Lee
  • Patent number: 9828689
    Abstract: Provided are an aluminum conductive member that includes an electrical connection portion excellent in conductivity and rust resistance and an electrical insulation portion excellent in long-term durability, chemical resistance, and the like, and can be manufactured at low cost, and a method of manufacturing the same. Specifically, provided are an aluminum conductive member, including: an aluminum conductive base material formed of an aluminum material including aluminum or an aluminum alloy; an electrical connection portion formed in a region of the aluminum conductive base material, the electrical connection portion having a surface coated with a conductive oxidation preventing film and being used as a terminal; and an electrical insulation portion formed in a region of the aluminum conductive base material other than the region in which the electrical connection portion is formed, the electrical insulation portion being coated with an anodic oxide film, and a method of manufacturing the same.
    Type: Grant
    Filed: January 24, 2014
    Date of Patent: November 28, 2017
    Assignee: NIPPON LIGHT METAL COMPANY, LTD.
    Inventor: Manabu Ookubo
  • Patent number: 9725799
    Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: August 8, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Jennifer Y. Sun, Vahid Firouzdor, Biraja Prasad Kanungo, Tom K. Cho, Vedapuram S. Achutharaman, Ying Zhang
  • Patent number: 8992740
    Abstract: An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.
    Type: Grant
    Filed: April 5, 2012
    Date of Patent: March 31, 2015
    Assignee: Fujikura Ltd.
    Inventors: Satoru Hanyu, Yasuhiro Iijima
  • Publication number: 20140162884
    Abstract: Described is a superconductive layered structure and an article including this superconductive layered structure on a substrate structure. The superconductive layered structure comprises a stack including at least one bi-layered assembly formed by first and second layers of similar superconducting material compositions, the second layer being superconductive at predetermined temperature condition, the first layer being a substantially thin layer and having a c lattice parameter selected in accordance with those of the substrate structure and the second layer, such that said first layer is non-superconductive at said predetermined temperature condition thereby allowing the second superconductive layer to be desirably thick to provide high critical current density of the superconductive layer.
    Type: Application
    Filed: February 11, 2014
    Publication date: June 12, 2014
    Applicant: Ramot at Tel-Aviv University Ltd.
    Inventors: Guy DEUTSCHER, Mishael AZOULAY, Boaz ALMOG
  • Patent number: 8486864
    Abstract: The present invention relates to a method for producing a phase-separated layer useful as a flux pinning substrate for a superconducting film, wherein the method includes subjecting at least a first and a second target material to a sputtering deposition technique in order that a phase-separated layer is deposited epitaxially on a primary substrate containing an ordered surface layer. The invention is also directed to a method for producing a superconducting tape containing pinning defects therein by depositing a superconducting film on a phase-separated layer produced by the method described above.
    Type: Grant
    Filed: December 29, 2009
    Date of Patent: July 16, 2013
    Assignees: UT-Battelle, LLC, University of Tennessee Research Foundation
    Inventors: Tolga Aytug, Mariappan Parans Paranthaman, Ozgur Polat
  • Publication number: 20130085071
    Abstract: Disclosed are an oxide superconductor tape and a method of manufacturing the oxide superconductor tape capable of improving the length and characteristics of superconductor tape and obtaining stabilized characteristics across the entire length thereof. A Y-class superconductor tape (10), as an oxide superconductor tape, comprises a tape (13) further comprising a tape-shaped non-oriented metallic substrate (11), and a first buffer layer (sheet layer) (12) that is formed by IBAD upon the tape-shaped non-oriented metallic substrate (11); and a second buffer layer (gap layer) (14), further comprising a lateral face portion (14a) that is extended to the lateral faces of the first buffer layer (sheet layer) (12) upon the tape (13) by RTR RF-magnetron sputtering.
    Type: Application
    Filed: February 10, 2011
    Publication date: April 4, 2013
    Inventors: Tatsuhisa Nakanishi, Yuji Aoki, Tsutomu Koizumi, Atsushi Kaneko, Takayo Hasegawa
  • Patent number: 8182862
    Abstract: An ion source impinging on the surface of the substrate to be coated is used to enhance a MOCVD, PVD or other process for the preparation of superconducting materials.
    Type: Grant
    Filed: June 5, 2003
    Date of Patent: May 22, 2012
    Assignee: SuperPower Inc.
    Inventors: Venkat Selvamanickam, Hee-Gyoun Lee
  • Patent number: 8124170
    Abstract: A method for forming a superconducting wire with a tape substrate comprises dispensing the tape substrate, providing at least one reactor chamber to form at least one buffer material on the tape substrate based on determining at least one of a type of tape substrate, a type of superconductor material, and a type of buffer material, providing another reactor chamber to continuously form a layer of the superconductor material on a layer of the buffer material, and spooling the tape substrate with the layer of superconductor material.
    Type: Grant
    Filed: January 19, 2005
    Date of Patent: February 28, 2012
    Assignee: Metal Oxide Technologies, Inc
    Inventors: Alex Ignatiev, Xin Zhang, Alexander A. Molodyk, Louis D. Castellani
  • Patent number: 8034746
    Abstract: Disclosed herein is a method of manufacturing round wire using superconducting tape, including the steps of: slitting superconducting tape into superconducting tape strips; silver-coating the slit superconducting tape strips; laminating the silver-coated superconducting tape strips to form a superconducting tape laminate having a square cross-section; holding the superconducting tape laminate; heat-treating the fixed superconducting tape laminate to cause diffusion junction between silver; and copper-plating the heat-treated superconducting tape laminate to have a circular section.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: October 11, 2011
    Assignee: Korea Electrotechnology Research Institute
    Inventors: Hong Soo Ha, Sang Soo Oh, Dong Woo Ha, Rock Kil Ko, Ho Sup Kim
  • Patent number: 8022012
    Abstract: A device for fabricating thin films on a substrate includes a vacuum chamber, a rotatable platen configured to hold one or more substrates within the vacuum chamber, and a housing disposed within the vacuum chamber. The housing contains a heating element and is configured to enclose an upper surface of the platen and a lower portion configured to partially enclose an underside surface of the platen which forms a reaction zone. A heated evaporation cell is operatively coupled to the lower portion of the housing and configured to deliver a pressurized metallic reactant to the reaction zone. The device includes a deposition zone disposed in the vacuum chamber and isolated from the reaction zone and is configured to deposit a deposition species to the exposed underside of the substrates when the substrates are not contained in the reaction zone.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: September 20, 2011
    Assignee: Superconductor Technologies, Inc.
    Inventors: Brian H. Moeckly, Ward S. Ruby
  • Publication number: 20110160066
    Abstract: The present invention relates to a method for producing a phase-separated layer useful as a flux pinning substrate for a superconducting film, wherein the method includes subjecting at least a first and a second target material to a sputtering deposition technique in order that a phase-separated layer is deposited epitaxially on a primary substrate containing an ordered surface layer. The invention is also directed to a method for producing a superconducting tape containing pinning defects therein by depositing a superconducting film on a phase-separated layer produced by the method described above.
    Type: Application
    Filed: December 29, 2009
    Publication date: June 30, 2011
    Applicant: UT-BATTELLE, LLC
    Inventors: Tolga Aytug, Mariappan Parans Paranthaman, Ozgur Polat
  • Patent number: 7910155
    Abstract: A method for manufacturing a high-temperature superconducting conductor includes translating an elongated substrate through a reactor. Further, a high temperature superconducting layer is formed on the substrate translating through the reactor by deposition of a reaction product of metalorganic precursor materials onto the substrate. Further, partial pressure of oxygen is monitored to indirectly monitor supply of metalorganic precursors into the reactor.
    Type: Grant
    Filed: January 6, 2006
    Date of Patent: March 22, 2011
    Assignee: Superpower, Inc.
    Inventors: Hee-Gyoun Lee, Venkat Selvamanickam
  • Publication number: 20110034338
    Abstract: A superconducting article includes a substrate having a biaxially textured surface, and an epitaxial biaxially textured superconducting film supported by the substrate. The epitaxial superconducting film includes particles of Ba2RETaO6 and is characterized by a critical current density higher than 1 MA/cm2 at 77K, self-field. In one embodiment the particles are assembled into columns. The particles and nanocolumns of Ba2RETaO6 defects enhance flux pinning which results in improved critical current densities of the superconducting films. Methods of making superconducting films with Ba2RETaO6 defects are also disclosed.
    Type: Application
    Filed: August 4, 2010
    Publication date: February 10, 2011
    Inventors: Amit Goyal, Claudia Cantoni, Eliot Specht, Sung-Hun Wee
  • Publication number: 20100267568
    Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.
    Type: Application
    Filed: April 30, 2010
    Publication date: October 21, 2010
    Inventors: Kaname Matsumoto, Masashi Mukaida, Yutaka Yoshida, Ataru Ichinose, Shigeru Horii
  • Patent number: 7718574
    Abstract: Methods for depositing, at a very high deposition rate, a biaxially-textured film on a continuously moving metal tape substrate are disclosed. These methods comprise: depositing a film on the substrate with a deposition flux having an oblique incident angle of about 5° to about 80° from the substrate normal, while simultaneously bombarding the deposited film using an ion beam at an ion beam incident angle arranged along either a best ion texture direction of the film or along a second best ion texture direction of the film, thereby forming the biaxially-textured film, wherein a deposition flux incident plane is arranged parallel to a direction along which the biaxially-textured film has a fast in-plane growth rate. Superconducting articles comprising a substrate, a biaxially-textured film deposited on said substrate by said methods above; and a superconducting layer disposed on the biaxially-textured film are also disclosed.
    Type: Grant
    Filed: April 8, 2004
    Date of Patent: May 18, 2010
    Assignee: SuperPower, Inc.
    Inventors: Xuming Xiong, Venkat Selvamanickam
  • Patent number: 7582328
    Abstract: An oxide superconductor article having an oxide superconductor layer of a predetermined pattern is prepared by continuously advancing a wire having a textured surface into a deposition zone, dispensing droplets of a precursor solution to an oxide superconductor from a reservoir and the depositing droplets onto the textured surface of the wire that is introduced into the deposition zone, heating the wire or tape in the reaction zone under conditions to convert the precursor solution into an oxide superconductor; and collecting the wire after heating.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: September 1, 2009
    Assignee: American Superconductor Corporation
    Inventors: Martin W. Rupich, Cornelis L. Thieme
  • Patent number: 7544273
    Abstract: A method of making a film having a uniform thickness and having a crystal axis parallel to a main surface of a substrate is described. In a deposition method, a film is formed by scattering a deposition material from a target (12) surface and growing the scattered deposition material on a main surface (100a) of a substrate (100). The method includes the steps of positioning the substrate (100) into a first state where the distance between one end (100f) and the target (12) is small and the distance between the other end (100e) and the target material (12) is relatively large, forming a first film (110) on the substrate (100) in the first state, positioning the substrate (100) into a second state where the distance between one end (100f) and the target (12) is large and the distance between the other end (100e) and the target (12) is small, and. forming a second film (120) on the first film (110) in the second state.
    Type: Grant
    Filed: December 10, 2001
    Date of Patent: June 9, 2009
    Assignees: Sumitomo Electric Industries, Ltd., International Superconductivity Technology
    Inventors: Takahiro Taneda, Koso Fujino, Kazuya Ohmatsu
  • Publication number: 20090137400
    Abstract: A superconducting thin film material that can realize attainment of an excellent property such as a high JC and a high IC and reduction of costs at the same time includes an orientated metal substrate and an oxide superconductor film formed on the orientated metal substrate. The oxide superconductor film includes a physical vapor deposition HoBCO layer formed by a physical vapor deposition method, and a metal organic deposition HoBCO layer formed on the physical vapor deposition HoBCO layer by a metal organic deposition method.
    Type: Application
    Filed: April 20, 2007
    Publication date: May 28, 2009
    Applicants: Sumitomo Electric Industries, Ltd., International Superconductivity Technology Center, the Juridical Foundation
    Inventors: Shuji Hahakura, Kazuya Ohmatsu, Munetsugu Ueyama, Katsuya Hasegawa
  • Patent number: 7501145
    Abstract: A method includes feeding an uncoated substrate from a payout spool into a multi-chambered vacuum apparatus. The vacuum apparatus includes a plurality of deposition chambers defining an extended deposition zone, a multi-zone substrate heater located within the extended deposition zone, and multiple high-temperature superconductor (HTS) targets located within and being arranged linearly along the extended deposition zone. The multiple HTS targets include a first and second HTS target. The first and second HTS targets include a HTS material. The method farther includes translating the uncoated substrate along a translation path through the plurality of deposition chambers, impinging multiple laser beams simultaneously upon the multiple HTS targets and forming multiple overlapping plumes of HTS material within the extended deposition zone, depositing HTS material on a first major surface of the uncoated substrate to provide a coated substrate, and winding the coated substrate onto a take-up spool.
    Type: Grant
    Filed: October 30, 2006
    Date of Patent: March 10, 2009
    Assignee: Superpower, Inc.
    Inventors: Venkat Selvamanickam, Yijie Li, Chan Park
  • Publication number: 20080318793
    Abstract: The invention relates to a method for producing a superconductive element to be used as a wire-in-channel superconductor in magnetic resonance imaging (MRI) and in nuclear magnetic resonance (NMR) applications, which superconductive element contains a superconductive wire and a copper component having a longitudinal groove and the superconductive wire being positioned in the groove. In order to produce the wire-in-channel superconductive element by a mechanical contact between the superconductive wire and a wall of the groove in the copper component, at least one contact surface is coated with a lead free solder material before having the mechanical contact. In order to enhance the thermal and electrical conduction and to create a bond between the said components the soldering material is fused in annealing process step.
    Type: Application
    Filed: May 11, 2006
    Publication date: December 25, 2008
    Inventor: Jukka Somerkoski
  • Patent number: 7445808
    Abstract: A superconducting article and a method of making a superconducting article is described. The method of forming a superconducting article includes providing a substrate, forming a buffer layer to overlie the substrate, the buffer layer including a first buffer film deposited in the presence of an ion beam assist source and having a uniaxial crystal texture. The method further includes forming a superconducting layer to overlie the buffer layer.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: November 4, 2008
    Assignee: Superpower, Inc.
    Inventors: Xuming Xiong, Venkat Selvamanickam, Ping Hou
  • Patent number: 7439208
    Abstract: A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.
    Type: Grant
    Filed: December 1, 2003
    Date of Patent: October 21, 2008
    Assignee: Superconductor Technologies, Inc.
    Inventors: Brian H. Moeckly, Ward S. Ruby
  • Patent number: 7393600
    Abstract: A sintered article is fabricated which contains one or more of indium oxide, zinc oxide, and tin oxide as a component thereof and contains any one or more types of metal out of hafnium oxide, tantalum oxide, lanthanide oxide, and bismuth oxide. A backing plate is attached to this sintered article to constitute a sputtering target. This sputtering target is used to fabricate a conductive film on a predetermined substrate by sputtering. This conductive film achieves a large work function while maintaining as much transparency as heretofore. This conductive film can be used to achieve an EL device or the like of improved hole injection efficiency.
    Type: Grant
    Filed: June 9, 2003
    Date of Patent: July 1, 2008
    Assignee: Idemitsu Kosan Co., Ltd.
    Inventors: Kazuyoshi Inoue, Hisayuki Kawamura
  • Patent number: 7335283
    Abstract: A method and an apparatus which permits making a composite oxide thin film excellent in crystallinity easily and at a low temperature, with the capability of controlling the basic unit cell structure as desired, and without the need for a post annealing, as well as a composite oxide thin film thereby, especially a Cu group high temperature superconducting thin film, are disclosed. A thin Cu group high temperature superconducting film, which is constituted of a charge supply block (1) and a superconducting block (2), is formed on a substrate by alternately sputtering from a sputtering target having a composition of the charge supply block (1) and a sputtering target having a composition of the superconducting block (2) and repeating such an alternate sputtering operation a number of times needed for the film to reach a desired thickness.
    Type: Grant
    Filed: August 24, 2001
    Date of Patent: February 26, 2008
    Assignees: Japan Science and Technology Corporation, National Institute of Advanced Industrial Science and Technology
    Inventors: Yoshiko Ihara, legal representative, Hideyo Ihara, legal representative, Hidetaka Ihara, legal representative, Gen-ei Ihara, legal representative, Chiaki Ihara, legal representative, Sundaresan Athinarayanan, JiaCai Nie, Hideo Ihara
  • Patent number: 7247340
    Abstract: A method of forming a superconducting conductor is disclosed. The method provides translating a substrate tape through a deposition chamber and along a helical path, where the helical path has multiple windings of the substrate tape and each winding of the substrate tape extends along a feed path and a return path. The method further provides depositing a HTS layer overlying the substrate tape within a deposition chamber, wherein the deposition chamber houses the substrate tape along the feed path but not the return path.
    Type: Grant
    Filed: December 28, 2005
    Date of Patent: July 24, 2007
    Assignee: Superpower, Inc.
    Inventors: Thomas Martin Salagaj, Venkat Selvamanickam
  • Patent number: 7189425
    Abstract: A superconducting magnesium diboride (MgB2) thin film having c-axial orientation and a method and apparatus for fabricating the same are provided. The fabrication method includes forming a boron thin film on a substrate and thermally processing the substrate on which the boron thin film is formed along with a magnesium source and cooling the resulting structure. The superconducting magnesium diboride thin film can be used in a variety of electronic devices employing superconducting thin films, such as precision medical diagnosis equipment using superconducting quantum interface devices (SQUIDs) capable of sensing weak magnetic fields, microwave communications equipment used for satellite communications, and Josephson devices. Computer systems with 100 times greater computing speed can be implemented with the superconducting magnesium diboride thin film.
    Type: Grant
    Filed: February 20, 2004
    Date of Patent: March 13, 2007
    Assignee: Pohang University of Science and Technology Foundation
    Inventors: Won nam Kang, Sung-ik Lee, Eun-mi Choi, Hyeong-jin Kim
  • Patent number: 7074744
    Abstract: A method of coating a substrate for a high temperature superconductor material is disclosed, including loading a substrate into a first deposition chamber, routing the substrate in the first deposition chamber such that the substrate forms a helical winding in the first deposition chamber, and depositing a first buffer layer to overlie the substrate as the substrate translates along the helical winding. The buffer layer has a biaxial crystallographic texture.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: July 11, 2006
    Assignee: SuperPower, Inc.
    Inventors: Venkat Selvamanickam, Srinivas Sathiraju
  • Patent number: 7037595
    Abstract: A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.
    Type: Grant
    Filed: November 15, 1999
    Date of Patent: May 2, 2006
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Bernard Andre, Jean Dijon, Brigitte Rafin
  • Patent number: 6994775
    Abstract: The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.
    Type: Grant
    Filed: July 31, 2002
    Date of Patent: February 7, 2006
    Assignee: The Regents of the University of California
    Inventors: Terry G. Holesinger, Quanxi Jia
  • Patent number: 6929820
    Abstract: A method includes forming an as-grown film of a superconductor composed of a MgB2 compound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive. The method can be applied to fabricate an integrated circuit of the superconductor film, because a high temperature annealing process to make the as-grown film superconductive is not needed.
    Type: Grant
    Filed: September 9, 2002
    Date of Patent: August 16, 2005
    Assignee: National Institute of Information and Communications Technology
    Inventors: Hisashi Shimakage, Atsushi Saito, Akira Kawakami, Zhen Wang
  • Patent number: 6906008
    Abstract: The present invention is a deposition system for the production of coated substrates that provides a first deposition process that subsequently feeds a second deposition process and where the two deposition processes are occurring concurrently. The consecutive deposition system includes two dynamically isolated deposition chambers. The substrate is helically wrapped about a cooling block within the first deposition chamber such that the tape is exposed to a deposition zone a number of times sufficient to correspond to the desired film thickness. A shielding element may be included in the second deposition chamber to limit the size of the second chamber deposition zone and thus the film thickness of the second coating layer.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: June 14, 2005
    Assignee: SuperPower, Inc.
    Inventors: Venkat Selvamanickam, Srinivas Sathiraju
  • Patent number: 6843898
    Abstract: Copper or excess copper is added to one or more layers of a superconducting composite structure to reduce migration of copper form a copper based superconducting layer.
    Type: Grant
    Filed: April 6, 2004
    Date of Patent: January 18, 2005
    Assignee: The Regents of the University of California
    Inventors: Terry G. Holesinger, Stephen R. Foltyn, Paul N. Arendt, James R. Groves, Quanxi Jia, Alicia Ayala
  • Patent number: 6835696
    Abstract: The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target, respectively, each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without being annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is unnecessary.
    Type: Grant
    Filed: September 6, 2002
    Date of Patent: December 28, 2004
    Assignee: Communications Research Laboratory Independent Administrative Institute
    Inventors: Atsushi Saito, Akira Kawakami, Hisashi Shimakage, Zhen Wang
  • Patent number: 6752911
    Abstract: The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed from a heat-resistant material, which completely surrounds the sputtering cathode and the object to be coated, at a small spacing, and which has at least one opening to let a gas in and at least one opening to let a gas out.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: June 22, 2004
    Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.
    Inventor: Thomas Jung
  • Publication number: 20040110042
    Abstract: The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.
    Type: Application
    Filed: July 31, 2002
    Publication date: June 10, 2004
    Inventors: Terry G. Holesinger, Quanxi Jia
  • Patent number: 6740624
    Abstract: A method and an apparatus for spraying materials onto a substrate to produce a coating thereon is described which allows very thick layers of complex metal oxides to be produced. The apparatus and method are particularly suitable for producing superconducting coatings.
    Type: Grant
    Filed: January 29, 2001
    Date of Patent: May 25, 2004
    Assignee: Universiteit Gent
    Inventors: Serge Hoste, Frans Persyn, Isabel Van Driessche
  • Patent number: 6676811
    Abstract: A method of depositing nanoparticles for flux pinning into a superconducting material is described. According to the method of the present invention, a target made of superconducting material and a substrate are placed in the deposition chamber of a pulsed laser deposition apparatus. A first, moderate vacuum level is established in the chamber and the target is irradiated with light from a pulsed, high energy laser. By virtue of the moderate vacuum level, the material ejected from the target is slowed sufficiently to agglomerate into nanoparticles having the same composition as the target material. These nanoparticles are deposited upon the substrate. A uniform layer of superconducting material is deposited on the substrate by evacuating the deposition chamber to a second, high vacuum level and performing the pulsed laser deposition process again. The nanoparticles thus deposited within the superconducting material act as a flux pinning mechanism.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: January 13, 2004
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Paul N. Barnes, P. Terry Murray
  • Publication number: 20030181337
    Abstract: A plurality of superconductor particles are formed being of a first material which is relatively brittle and is selected to be in a superconductive state at a relatively high temperature, typically above 77K which is the temperature of liquid nitrogen. A coating layer is formed on each superconductor particle, the coating layer being of a second material selected to be substantially non-reactive with the first material. The coated particles are then mixed with a third material to form a composite wherein the third material is in proximity to the first material but separated by the second material. The third material is selected to be relatively ductile when compared to the first material and to be driven to a superconductive state by the first material when the first material is in a superconductive state and the third material is in proximity to the first material. The second material protects the third material from oxidation by the first material.
    Type: Application
    Filed: December 24, 2002
    Publication date: September 25, 2003
    Inventor: Matthew J. Holcomb
  • Publication number: 20030096711
    Abstract: The present invention provides methods forming the superconductor of as-grown film of MgB2 which is made with magnesium and boron ejected from a magnesium target and a boron target respectively each in simultaneously sputtering process. The as-grown film composed of a compound of magnesium and boron is a superconductor without annealed. The present invention can be applied to fabricate an integrated circuit of superconductor film, because the high temperature annealing process for the as-grown film of MgB2 is not needed.
    Type: Application
    Filed: September 6, 2002
    Publication date: May 22, 2003
    Applicant: Communications Research Laboratory, Independent Administrative Institution
    Inventors: Atsushi Saito, Akira Kawakami, Hisashi Shimakage, Zhen Wang
  • Patent number: 6555221
    Abstract: A method for forming an ultra microparticle-structure composed of ultra microparticles including the steps of: forming on a substrate higher wettability parts and lower wettability parts to a material to be deposited, depositing on the substrate the material to be deposited to form particles made of the material on the substrate, and accumulating the particles in the higher wettability parts to form the ultra microparticle-structure composed of the ultra microparticles.
    Type: Grant
    Filed: October 25, 1999
    Date of Patent: April 29, 2003
    Assignee: The University of Tokyo
    Inventors: Hiroshi Komiyama, Hiroaki Shirakawa, Toshio Osawa
  • Patent number: 6506439
    Abstract: An apparatus and process for applying a superconductive layer on an elongate substrate that includes moving the elongate substrate through a heating zone, applying a pulsed laser beam against a target, having a length, that is coated with superconductive material wherein particles of superconductive material are separated from the target and strike the elongate substrate with a plasma beam in the heating zone, and oscillating the pulsed laser beam across the target to provide a substantially uniform coating of superconductive material on the elongate substrate.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: January 14, 2003
    Assignee: Zentrum für Funktionswerkstoffe Gemeinnuetzige Gesellschaft mbH
    Inventors: Alexander Usoskin, Herbert Carl Freyhardt, Juergen Knoke
  • Patent number: 6387851
    Abstract: An SrTiO3 monocrystal substrate having a crystallographic plane (100) or (110) is anisotropically etched in an H3PO4 solution using an SiO2 thin film as an etching mask. The H3PO4 solution is maintained at a boiling point of approximately 150 deg. C. for increasing an etching rate and enhancing selectivity for protection with the SiO2 thin film mask.
    Type: Grant
    Filed: December 16, 1999
    Date of Patent: May 14, 2002
    Assignee: Hitachi, Ltd.
    Inventor: Takao Matsumoto
  • Patent number: 6333111
    Abstract: The present invention provides a method for producing layered aluminum fine particles, and applications to single electron tunneling quantum devices, and the present invention further relates to a method for producing spherical metallic aluminum fine particles (layered aluminum fine particles), characterized in that metallic aluminum is supplied into a mixed gas of helium and 1×10−7 to 3×10−7 torr water vapor by sputtering induced by argon gas discharge to generate aggregates, after which this product is released into a vacuum to generate single crystals in which the surface layer is covered with alumina.
    Type: Grant
    Filed: March 13, 2000
    Date of Patent: December 25, 2001
    Assignee: Agency of Industrial Science and Technology
    Inventors: Junichi Murakami, Yutaka Tai, Kazuki Yoshimura, Kazuo Igarashi, Sakae Tanemura, Masahiro Goto
  • Patent number: 6214772
    Abstract: A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.
    Type: Grant
    Filed: June 18, 1998
    Date of Patent: April 10, 2001
    Assignee: Fujikura Ltd.
    Inventors: Yasuhiro Iijima, Mariko Hosaka, Nobuo Tanabe, Nobuyuki Sadakata, Takashi Saitoh