Specified Deposition Material Or Use Patents (Class 204/192.15)
  • Patent number: 11908669
    Abstract: The present disclosure provides systems and methods of controlling a magnetically confined plasma sputtering process using the waste heat transferred from the plasma into the target material and then into thermally controlled magnetic field adjustment assemblies that modify the strength of the plasma confinement magnetic fields on the target material.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: February 20, 2024
    Assignee: Arizona Thin Film Research, LLC
    Inventor: Patrick Morse
  • Patent number: 11908887
    Abstract: Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.
    Type: Grant
    Filed: May 4, 2021
    Date of Patent: February 20, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jaeho Lee, Boeun Park, Younggeun Park, Jooho Lee
  • Patent number: 11901564
    Abstract: An anode for batteries having a columnar nanostructured porous germanium for its active material. This nanostructured porous germanium can be produced with the novel etching method disclosed herein. Such anode can be easily mass-produced with the presented method that requires pre-existing, affordable and easy to integrate equipment. In some embodiments, the produced columnar porous germanium can be directly used as a monolithic anode after its etching nanostructuration for on-chip anodes for example, where the anisotropic nanostructured germanium acts as the active material and where the remaining bulk germanium layer act as the current collector. This can be easily implemented in lithium batteries. The cycle life of such anodes could be extended by a factor of 26 and 1.8 for high rate and high energy applications, respectively.
    Type: Grant
    Filed: February 9, 2022
    Date of Patent: February 13, 2024
    Inventors: Arthur Dupuy, Abderraouf Boucherif, Richard Ares
  • Patent number: 11891686
    Abstract: Apparatus for depositing one or more variable interference filters onto one or more substrates comprises a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The at least one magnetron sputtering device is configured to sputter material from a sputtering target towards in the mount, thereby defining a sputtering zone within the vacuum chamber. At least one static sputtering mask is located between the sputtering target and the mount. The at least one static sputtering mask is configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: February 6, 2024
    Inventors: Shigeng Song, Desmond Gibson, David Hutson
  • Patent number: 11885763
    Abstract: A gas concentration measurement system includes a limiting current-type gas sensor, a voltage source connected to the limiting current-type gas sensor, a current detector connected to the limiting current-type gas sensor, and a gas concentration arithmetic unit connected to the current detector. The voltage source supplies first and second voltages to the limiting current-type gas sensor. The first and second voltages generate first and second limiting currents corresponding to first and second gases, respectively, in the limiting current-type gas sensor. The current detector acquires first and second limiting current values of the limiting current-type gas sensor when the first and second voltages are applied to the limiting current-type gas sensor, respectively.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: January 30, 2024
    Assignee: ROHM Co., LTD.
    Inventors: Shunsuke Akasaka, Yurina Amamoto, Ken Nakahara
  • Patent number: 11873551
    Abstract: An ultraflat and ultralow-friction metallic glass thin film is fabricated. The metallic glass thin film is a binary alloy, wherein a content of one metal element of the binary alloy is between 45 atomic % and 64 atomic %. The metallic glass thin film has an atomically smooth surface with a surface roughness Ra less than 0.1 nm and a total height of profile Rt less than 0.15 nm; the friction coefficient is below 1×10?2. Due to the metallic glass thin film being treated by ion bombardment, the metallic glass thin film is thermally ultrastable.
    Type: Grant
    Filed: March 27, 2022
    Date of Patent: January 16, 2024
    Assignee: City University of Hong Kong
    Inventors: Jian Lu, Jialun Gu, Yan Bao
  • Patent number: 11867656
    Abstract: Disclosed herein is a limiting-current type gas sensor including a solid electrolyte, a first electrode disposed on the solid electrolyte, a second electrode disposed on the solid electrolyte, and a gas feed passage extending between a gas inlet and a first portion of the first electrode, the first portion facing the solid electrolyte. The first electrode is a first porous metal electrode. The gas feed passage is formed of a first porous transition metal oxide having a second melting point higher than a first melting point of the first electrode. The first porous transition metal oxide is Ta2O5, TiO2, or Cr2O3.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: January 9, 2024
    Assignee: ROHM Co., LTD.
    Inventors: Shunsuke Akasaka, Yurina Amamoto, Hiroyuki Yuji
  • Patent number: 11862439
    Abstract: In a substrate processing apparatus for processing a substrate, a processing chamber accommodating the substrate is provided. A mounting table is disposed in the processing chamber and configured to attract and hold the substrate using an electrostatic attractive force. A charge amount measurement unit is disposed in the processing chamber and configured to measure charge amount of a substrate attraction surface of the mounting table. A charge neutralization mechanism is configured to neutralize the substrate attraction surface of the mounting table. A retreating mechanism is configured to make the charge amount measurement unit retreat from a measurement position facing the substrate attraction surface of the mounting table.
    Type: Grant
    Filed: March 17, 2020
    Date of Patent: January 2, 2024
    Assignee: Tokyo Electron Limited
    Inventors: Takahiro Kawawa, Hideomi Hosaka, Kouichi Nakajima, Masamichi Hara
  • Patent number: 11851749
    Abstract: A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jen-Chun Wang, Ya-Lien Lee, Chih-Chien Chi, Hung-Wen Su
  • Patent number: 11851755
    Abstract: A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and arranged to hold at least a first substrate; a precursor distribution and removal system to provide to and remove from the reaction chamber a vaporized first or second precursor; and, a sequence controller operably connected to the precursor distribution and removal system and comprising a memory provided with a program to execute infiltration of an infiltrateable material provided on the substrate when run on the sequence controller by: activating the precursor distribution and removal system to provide and maintain the first precursor for a first period T1 in the reaction chamber; activating the precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber for a second period T2; and, activating the precursor distribution and removal system to provide and maintain the second precursor for a third period T3 in the reaction chamber.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: December 26, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Jan Willem Maes, Werner Knaepen, Krzysztof Kamil Kachel, David Kurt de Roest, Bert Jongbloed, Dieter Pierreux
  • Patent number: 11842961
    Abstract: An approach to provide a semiconductor structure using different two metal materials for interconnects in the middle of the line and the back end of the line metal layers of a semiconductor chip. The semiconductor structure includes the first metal material connecting both horizontally and vertically with the second metal material and the second metal material connecting both horizontally and vertically with the first metal material where the second metal material is more resistant to electromigration than the first metal material.
    Type: Grant
    Filed: August 26, 2021
    Date of Patent: December 12, 2023
    Assignee: International Business Machines Corporation
    Inventors: Lawrence A. Clevenger, Kisik Choi, Nicholas Anthony Lanzillo, Brent Anderson
  • Patent number: 11823880
    Abstract: A target structure includes a target, a cooling jacket having a flow path through which a heat exchange medium flows, and a backing plate. The target is bonded to one surface of the cooling jacket. A remaining surface of the cooling jacket and the backing plate are bonded in a peripheral portion, and are not bonded in a non-bonding region inside the peripheral portion.
    Type: Grant
    Filed: July 15, 2020
    Date of Patent: November 21, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Einstein Noel Abarra
  • Patent number: 11823875
    Abstract: Systems and methods for real-time control of temperature within a plasma chamber are described. One of the methods includes sensing a voltage in real time of a rail that is coupled to a voltage source. The voltage source supplies a voltage to multiple heater elements of the plasma chamber. The voltage that is sensed is used to adjust one or more duty cycles of corresponding one or more of the heater elements. The adjusted one or more duty cycles facilitate achieving and maintaining a temperature value within the plasma chamber over time.
    Type: Grant
    Filed: July 26, 2021
    Date of Patent: November 21, 2023
    Assignee: Lam Research Corporation
    Inventor: Changyou Jing
  • Patent number: 11821084
    Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.
    Type: Grant
    Filed: September 23, 2021
    Date of Patent: November 21, 2023
    Assignee: ASM IP Holding, B.V.
    Inventors: Jani Hamalainen, Mikko Ritala, Markku Leskela
  • Patent number: 11821077
    Abstract: A sputtering target having a unitary body. The unitary body includes a planar substrate plate and a toroidal portion extending from a top surface of the substrate plate. The toroidal portion reduces non-uniform erosion against the plate caused by a magnetic field applied to the target. In use, the magnetic field is initially received at the toroidal portion. After the magnetic field wears down the toroidal portion, the magnetic field is received at the substrate plate.
    Type: Grant
    Filed: December 17, 2020
    Date of Patent: November 21, 2023
    Assignee: YOUNGSTOWN STATE UNIVERSITY
    Inventors: Constantin Virgil Solomon, Christopher Yaw Bansah, Tom Nelson Oder
  • Patent number: 11794366
    Abstract: A razor blade including: a substrate having a tip portion including a tip region, a blade body including a base, and first and second outer sides disposed opposite a split line of the substrate that converge at a tip; and first and second coatings disposed substantially on the first and second outer sides, respectively. Also provided is a method of coating the razor blade, including: applying a first coating to at least a portion of the first outer side; and applying a second coating to at least a portion of the second outer side. The first and second coatings each extend from the tip region toward the base and are substantially different, as compared to each other.
    Type: Grant
    Filed: April 15, 2021
    Date of Patent: October 24, 2023
    Assignee: The Gillette Company LLC
    Inventors: Kenneth James Skrobis, William Owen Jolley, John Lawrence Maziarz, Bin Shen, Ronald Richard Duff, Jr., Joe David Lussier, Oliver Heinz Claus, Joseph Allan DePuydt, Jason Scott Slattery, John Joseph Nisby
  • Patent number: 11788182
    Abstract: A hydrogen-free carbon film polymer lubricating material and a preparation method and use thereof are disclosed. In the method, a graphite target is used as the target material, and a magnetron sputtering deposition is performed on a surface of the polymer substrate, thereby physically depositing and forming a hydrogen-free carbon film on the surface of the polymer substrate, thereby obtaining a hydrogen-free carbon film polymer lubricating material.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: October 17, 2023
    Assignee: Lanzhou Institute of Chemical Physics Chinese Academy of Sciences
    Inventors: Peng Wang, Liqiang Chai, Li Qiao, Xiaogang Bai, Xiaoyu Zhao
  • Patent number: 11789357
    Abstract: A reflective mask blank including a substrate, a multilayer reflection film consisting of at least two first layers and at least two second layers that are laminated alternatively and having different optical properties each other, and an absorber film are manufactured by a sputtering method. Each layer is formed by two stages consisting of a first stage applied from when the forming of each layer is started and until a prescribed thickness is formed, and a second stage applied from when the prescribed thickness is formed and until the forming of each layer is completed, and a sputtering pressure of the first stage is set to higher than both a sputtering pressure at which the forming of the layer formed just before is completed, and a sputtering pressure of the second stage.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: October 17, 2023
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yukio Inazuki, Takuro Kosaka, Tsuneo Terasawa
  • Patent number: 11776893
    Abstract: Metallic alloy interconnects (which can comprise copper) with low electrical resistivity and methods for making the same are disclosed. The electrical resistivity of thin film copper alloys was reduced by 36% with niobium solute and by 51% with iron solute compared to pure copper counterpart in dilute solute regimes (0-1.5 atomic %). The fabrication method is operated at room temperature, and does not require a high temperature annealing step.
    Type: Grant
    Filed: June 19, 2018
    Date of Patent: October 3, 2023
    Assignee: The Trustees of the University of Pennsylvania
    Inventors: Daniel S. Gianola, Gyuseok Kim
  • Patent number: 11756790
    Abstract: A method is described for patterning a dielectric layer disposed over a semiconductor substrate layer. The patterning process includes forming a patterned hard mask layer over the dielectric layer, the patterned hard mask layer exposing a portion of a major surface of the dielectric layer. A portion of the dielectric layer is removed by a cyclic etch process, where performing one cycle of the cyclic etch process comprises forming a capping layer selectively over the patterned hard mask layer and performing a timed etch process that removes material from the dielectric layer. In another method, the deposition over the hard mask and the removal of the portion of the dielectric layer are performed concurrently.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: September 12, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Yen-Tien Lu, Xinghua Sun, Shihsheng Chang, Eric Chih-Fang Liu, Angelique Raley, Katie Lutker-Lee
  • Patent number: 11752236
    Abstract: In one aspect, the disclosure relates to protective, anti-bacterial coatings for medical implants and methods of making the same. Also disclosed herein are methods for improving the anti-bacterial properties of a medical device coated with silicon carbide (SiC) or titanium nitride (TiN). Further disclosed herein are medical devices including an anti-microbial layer prepared by the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: September 12, 2023
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
    Inventors: Josephine F. Esquivel-Upshaw, Arthur E. Clark, Fan Ren, Samira Afonso Camargo
  • Patent number: 11747730
    Abstract: A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: September 5, 2023
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Yuan-Hao Jin, Dong An, Shou-Shan Fan
  • Patent number: 11738391
    Abstract: The invention relates to a 3D printer. The 3D printer includes a first feeder containing a metallic powder first print material, a second feeder containing a metallic powder second print material, delivery means that sprays the print materials, a holder holding a substrate, and a controller. As the print materials are sprayed from the delivery means the controller, which is computerized, adjusts the relative disposition of the delivery means and substrate, and the controller controls the first and second feeders to each feed their print material to the delivery means, so that the print materials form a 3D article on the substrate wherein different parts of the 3D article have different characteristics due to the different print materials or proportions thereof being used for different portions of the 3D article.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: August 29, 2023
    Assignee: EFFUSIONTECH IP PTY. LTD.
    Inventor: Steven Camilleri
  • Patent number: 11739418
    Abstract: A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: August 29, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Mingwei Zhu, Zihao Yang, Nag B. Patibandla, Ludovic Godet, Yong Cao, Daniel Lee Diehl, Zhebo Chen
  • Patent number: 11731910
    Abstract: A method of making a ceramic matrix composite (CMC) that may show improved resistance to chemical attack from molten silicon along with excellent mechanical strength is described. The method includes forming an interphase coating on one or more silicon carbide fibers, depositing a matrix layer comprising silicon carbide on the interphase coating, oxidizing the matrix layer to form an oxidized film comprising silicon oxide, depositing a wetting layer comprising silicon carbide on the oxidized film. After depositing the wetting layer, a fiber preform containing the silicon carbide fibers is heat treated. After the heat treatment, the fiber preform is infiltrated with a slurry. After infiltration with the slurry, the fiber preform is infiltrated with a melt containing silicon, and then the melt is cooled to form a ceramic matrix composite.
    Type: Grant
    Filed: October 29, 2021
    Date of Patent: August 22, 2023
    Assignee: ROLLS-ROYCE HIGH TEMPERATURE COMPOSITES INC.
    Inventor: Richard Kidd
  • Patent number: 11733512
    Abstract: A sensor is disclosed. The sensor may comprise: a housing, comprising a transmitting coil; and an optic assembly, comprising a body supporting at least one receiving coil and a conductive film that is in electrical contact with the at least one receiving coil, wherein, when the transmitting coil is energized, the at least one receiving coil is wirelessly energized causing a temperature of the film to increase.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: August 22, 2023
    Assignee: Ford Global Technologies, LLC
    Inventors: Prashant Dubey, Segundo Baldovino, LaRon Michelle Brown, Venkatesh Krishnan
  • Patent number: 11724317
    Abstract: In one aspect, refractory coatings are described herein having multiple cubic phases. In some embodiments, a coating comprises a refractory layer of TiAlN deposited by PVD adhered to the substrate, the refractory layer comprising a cubic TiAlN phase and a cubic A1N phase, wherein a ratio of intensity in the X-ray diffractogram (XRD) of a (200) reflection of the cubic AlN phase to intensity of a (200) reflection of the cubic TiAlN phase, I(200)/I(200), is at least 0.5.
    Type: Grant
    Filed: March 10, 2022
    Date of Patent: August 15, 2023
    Assignee: KENNAMETAL INC.
    Inventor: Joern Kohlscheen
  • Patent number: 11728270
    Abstract: A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 ??·cm: Mn+1AXn??Formula 1 In Formula 1, M, A, X, and n are as described in the specification.
    Type: Grant
    Filed: July 23, 2021
    Date of Patent: August 15, 2023
    Assignees: Samsung Electronics Co., Ltd., AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Youngjae Kang, SangWoon Lee, Joungeun Yoo, Duseop Yoon
  • Patent number: 11715621
    Abstract: A system may include a substrate stage, configured to support a substrate, where a main surface of the substrate defines a substrate plane. The system may include an ion source, including an extraction assembly that is oriented to direct an ion beam to the substrate along a trajectory defining a non-zero angle of incidence with respect to a perpendicular to the substrate plane. The system may include a radical source oriented to direct a radical beam to the substrate along a trajectory defining the non-zero angle of incidence with respect to a perpendicular to the substrate plane. The substrate stage may be further configured to scan the substrate along a first direction, lying with the substrate plane, while the main surface of the substrate is oriented within the substrate plane.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: August 1, 2023
    Assignee: APPLIED Materials, Inc.
    Inventors: Peter F. Kurunczi, Morgan Evans, Joseph C. Olson, Christopher A. Rowland, James Buonodono
  • Patent number: 11705549
    Abstract: Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]: SiNx??[Chemical Formula 1] (wherein 0<x?1.5).
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: July 18, 2023
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Ji-Won Choi, Jin Sang Kim, Chong Yun Kang, Seung Hyub Baek, Seong Keun Kim, Hyun-Cheol Song, Sang Tae Kim, Hyun Seok Lee
  • Patent number: 11705315
    Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises a vacuum chamber in which a substrate is located; a target having one surface facing an inner surface of the vacuum chamber; a gas supplier configured to supply a gas for generating plasma in the vacuum chamber; a power supplier configured to supply a power to the target to generate the plasma, sputter the target, and form a film on the substrate; and an abnormality detector configured to detect abnormality caused by a temperature of the target.
    Type: Grant
    Filed: November 10, 2021
    Date of Patent: July 18, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shota Ishibashi, Hiroyuki Toshima
  • Patent number: 11691176
    Abstract: The present disclosure relates to coated non-metallic substrates and coated metallic substrates, and methods for producing such coated substrates. A variant of the method is characterized in that a mat or glossy coating is underneath a metallic layer obtained in some cases by way of vapor deposition and/or sputtering. In another variant, the metallic is sufficiently thin so that it remains transparent or translucent to visible light. The coated substrates may include multiple layers such as metallic layers, polysiloxane layers, a color layer, a conversion layer, a primer layer, and/or a transparent or colored layer. An application system for applying a metallic layer to at least one surface of a substrate may include a plasma generator and/or a corona system for treating one or more layers by plasma treatment and/or corona treatment.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: July 4, 2023
    Assignee: HEC High End Coating GmbH
    Inventor: Matthias Koch
  • Patent number: 11668003
    Abstract: A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.
    Type: Grant
    Filed: December 16, 2021
    Date of Patent: June 6, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Vibhu Jindal, Sanjay Bhat
  • Patent number: 11670751
    Abstract: Provided is a flexible air supply damper system for preventing an overdrying-caused defect of a secondary battery electrode plate, the flexible air supply damper system including: a fluid supply unit supplying a fluid; a heating unit heating the fluid supplied through the fluid supply unit; a drying unit drying the electrode plate while receiving the fluid heated through the heating unit; a damper unit splitting the fluid passing through the heating unit to control an amount of the fluid to be introduced into the drying unit; and a discharge unit through which the fluid used in the drying unit and the fluid split out of the damper unit are discharged. By controlling the amount of the fluid to be introduced into the drying unit, the electrode plate is prevented from being overdried.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: June 6, 2023
    Assignee: SK ON CO., LTD
    Inventors: Sang Hwa Lee, Se Hun Park, Hoe Sun Jeong
  • Patent number: 11672081
    Abstract: A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: June 6, 2023
    Assignee: InnoLux Corporation
    Inventors: Hsueh-Hsuan Chou, Yi-Hung Lin
  • Patent number: 11664275
    Abstract: There is provided a technique that includes: loading a substrate having a metal film composed of a single metal element formed on a surface of the substrate into a process chamber; generating reactive species by plasma-exciting a processing gas containing hydrogen and oxygen; and modifying the metal film by supplying the reactive species to the substrate, wherein in the act of modifying the metal film, the metal film is modified such that a crystal grain size of the metal element constituting the metal film is larger than that before performing the act of modifying the metal film.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: May 30, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Masanori Nakayama, Katsunori Funaki, Tatsushi Ueda, Yasutoshi Tsubota, Yuichiro Takeshima, Hiroto Igawa, Yuki Yamakado
  • Patent number: 11660636
    Abstract: The present disclosure provides an aluminum alloy coating, an aluminum alloy wheel hub and a spraying method of an aluminum alloy wheel hub. The aluminum alloy coating includes a base powder layer, a main body layer and a transparent powder layer from inside to outside. The main body layer includes at least two prime coat layers and at least two colored paint layers which are superposed in a preset order.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: May 30, 2023
    Assignee: CITIC DICASTAL CO., LTD.
    Inventors: Peng Han, Qingwang Wei, Yafei Song, Yongfeng Shu, Jian Zhang, Kun Gu, Yu Liu, Jian Li
  • Patent number: 11660770
    Abstract: According to one embodiment, a shaving blade includes a substrate having a cutting edge provided with a sharp substrate tip, wherein a thickness T16 of the substrate measured at a distance D16, which is 16 micrometers from the substrate tip, is in a range from 2.41 micrometers to 3.76 micrometers.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: May 30, 2023
    Assignee: DORCO CO., LTD.
    Inventors: Hyun Ju Lee, Kwang Choon Ryu, Min Joo Park
  • Patent number: 11649544
    Abstract: A method for depositing a large-area graphene layer and an apparatus for continuous graphene deposition using the same are disclosed. The method can include forming a titanium (Ti) layer on a substrate by sputtering, reducing the titanium layer by spraying a reductant gas containing a hydrogen gas (H2) and a purge gas onto the titanium layer while moving in a first direction in relation to the substrate and exhausting the reductant gas and the purge gas. The method can also include forming graphene by spraying a reactant gas containing a graphene source and the purge gas onto the titanium layer while moving in a second direction opposite the first direction in relation to the substrate and exhausting the reactant gas and the purge gas.
    Type: Grant
    Filed: December 9, 2020
    Date of Patent: May 16, 2023
    Assignee: KUK-IL GRAPHENE CO., LTD
    Inventors: Dong Ho Yoon, Chul Kyu Song, Ji Hye Han, Soon Gil Yoon, Ji Ho Eom
  • Patent number: 11652110
    Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 nm?.
    Type: Grant
    Filed: January 8, 2021
    Date of Patent: May 16, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Noritaka Ishihara, Masashi Oota
  • Patent number: 11646148
    Abstract: The invention relates to a passive electrical component, especially a coil, having an interlayer, wherein the interlayer has a lower coefficient of thermal expansion than the surface of the passive electrical component covered with the interlayer, and disposed atop that a plasma-polymeric carbon-containing coating having a carbon content measured at a depth of 80 nm away from the side of the plasma-polymeric coating remote from the interlayer, wherein the plasma-polymeric coating comprises a carbon content of 50 to 100 atom %, preferably 50 to 90 atom %, or is configured as an organometallic coating a carbon content of 2 to 50 atom %, in each case measured by means of XPS.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: May 9, 2023
    Assignee: Fraunhofer-Gesellschaft zur Förderung dee angewandten Forschung e.V.
    Inventors: Dirk Salz, Ralph Wilken, Stefan Dieckhoff, Malte Burchardt, Christopher Dölle, Christoph Regula, Franz-Josef Wöstmann
  • Patent number: 11643716
    Abstract: A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.
    Type: Grant
    Filed: January 5, 2018
    Date of Patent: May 9, 2023
    Assignee: ZHEJIANG CRYSTAL-OPTECH CO., LTD.
    Inventors: Ruizhi Zhang, Jian Tang, Ying Wang, Hui Yu, Zhangwu Lu, Zhengchi Xu, Qibin Zhang
  • Patent number: 11621127
    Abstract: A multilayer ceramic capacitor includes a body having a dielectric layer and internal electrodes disposed to be alternately exposed to the third and fourth surfaces with the dielectric layer interposed therebetween. External electrodes include connection parts respectively formed on opposing surfaces of the body, band parts formed to extend from the connection parts to portions of side surfaces of the body, and corner parts in which the connection parts and the band parts are contiguous. A thickness of each of the external electrodes may be 50 nm to 2 ?m. The external electrodes may be formed using a barrel-type sputtering method. A ratio t2/t1 may satisfy 0.7 to 1.2, where t1 is a thickness of each connection part and t2 is a thickness of each band part. A ratio t3/t1 may satisfy 0.7 to 1.0, where t3 is a thickness of each corner part.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: April 4, 2023
    Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
    Inventors: Dong Joon Oh, Tae Joon Park, Sang Wook Lee, Sung Min Cho, Seung Mo Lim
  • Patent number: 11588064
    Abstract: A method includes providing an electrically conductive mandrel having an outer surface layer comprising a preformed pattern. The metallic article is electroformed. The metallic article includes a plurality of electroformed elements formed in the preformed pattern on the outer surface layer of the mandrel. The plurality of electroformed elements have a first side adjacent to the outer surface layer of the mandrel and a second side. The metallic article is separated from the mandrel. The plurality of electroformed elements are interconnected such that the metallic article forms a unitary, free-standing piece. A solution is applied to create a blackening of the first side of the plurality of electroformed elements.
    Type: Grant
    Filed: December 21, 2020
    Date of Patent: February 21, 2023
    Assignee: Merlin Solar Technologies, Inc.
    Inventors: Arvind Chari, Venkatesan Murali, Robert Brainard, Gopal Prabhu, Jesse Dam
  • Patent number: 11587904
    Abstract: A display panel includes a plurality of light-emitting elements. Light emitted from a first light-emitting element has a CIE 1931 chromaticity coordinate x of greater than 0.680 and less than or equal to 0.720 and a CIE 1931 chromaticity coordinate y of greater than or equal to 0.260 and less than or equal to 0.320. Light emitted from a second light-emitting element has a CIE 1931 chromaticity coordinate x of greater than or equal to 0.130 and less than or equal to 0.250 and a CIE 1931 chromaticity coordinate y of greater than 0.710 and less than or equal to 0.810. Light emitted from a third light-emitting element has a CIE 1931 chromaticity coordinate x of greater than or equal to 0.120 and less than or equal to 0.170 and a CIE 1931 chromaticity coordinate y of greater than or equal to 0.020 and less than 0.060.
    Type: Grant
    Filed: November 19, 2020
    Date of Patent: February 21, 2023
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Daiki Nakamura, Yusuke Nishido, Satoshi Seo, Toshiki Sasaki, Ryohei Yamaoka, Akihiro Kaita
  • Patent number: 11545179
    Abstract: An information recording medium and a method for producing the same according to the present disclosure are configured to have an information layer in which a larger amount of light for reproduction can be obtained, so that the medium is suitable for recording information at high recording density and is useful for a multi-layer optical disc that records a large amount of contents.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: January 3, 2023
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Rie Kojima, Akio Tsuchino, Kazuki Aita
  • Patent number: 11521648
    Abstract: A heat-assisted magnetic recording (HAMR) medium has a multilayered underlayer between the heat-sink layer and the recording layer. One embodiment of the underlayer is a multilayer of a thermal barrier layer consisting essentially of MgO and TiO, and a seed layer containing MgO and nitrogen (N) directly on the thermal barrier layer, with the recording layer on and in contact with the seed layer. The interface between the thermal barrier layer and the seed layer contains Ti and N, some of which may be present as TiN to act as a diffusion barrier to prevent diffusion of the Ti into the recording layer. The Ti-containing thermal barrier layer has a higher thermal resistivity than the conventional MgO thermal barrier/seed layer and thus allows for reduced laser power to the recording layer while still achieving a high thermal gradient at the recording layer.
    Type: Grant
    Filed: February 9, 2021
    Date of Patent: December 6, 2022
    Assignee: Western Digital Technologies, Inc.
    Inventors: Hoan Cong Ho, Paul Christopher Dorsey, Tomoko Seki
  • Patent number: 11503886
    Abstract: Provided is a jewelry ring comprising a substrate, a first coating of a metallic nitride or a metallic boride, and an external metallic coating. Also provided is a metallic article comprising a substrate comprising tungsten carbide, cobalt, tungsten, titanium, titanium carbide, zirconium, tantalum or aluminum; a first coating of a metallic nitride or a metallic boride; and an external metallic coating.
    Type: Grant
    Filed: April 23, 2018
    Date of Patent: November 22, 2022
    Assignee: Frederick Goldman, Inc.
    Inventor: Andrew Derrig
  • Patent number: 11499242
    Abstract: A method for producing metal decorations on a curved dial made of insulating material includes forming, by a method of the LIGA-UV type, a mould made of photosensitive resin and of galvanically depositing a layer of at least one metal from the conductive layer in order to form a block substantially reaching the upper surface of the photosensitive resin.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: November 15, 2022
    Assignee: The Swatch Group Research and Development Ltd
    Inventors: Elias Laforge, Simon Springer
  • Patent number: 11495557
    Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: November 8, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Jhao-Cheng Chen, Huang-Hsien Chang, Wen-Long Lu, Shao Hsuan Chuang, Ching-Ju Chen, Tse-Chuan Chou