Specified Deposition Material Or Use Patents (Class 204/192.15)
  • Patent number: 10797353
    Abstract: A method of manufacturing an electrochemical cell may comprise exposing a surface of a metal substrate to a chalcogen in gas phase such that a metal chalcogenide layer forms on the surface of the metal substrate. A lithium metal foil may be laminated onto the metal chalcogenide layer on the surface of the metal substrate such that a surface of the lithium metal foil physically and chemically bonds to the metal chalcogenide layer on the surface of the metal substrate.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: October 6, 2020
    Assignee: GM Global Technology Operations LLC
    Inventors: Keegan Adair, Fang Dai, Mei Cai
  • Patent number: 10797301
    Abstract: In a method of manufacturing an electrochemical cell, a porous or non-porous electrically conductive metal substrate may be provided. A conformal metal chalcogenide layer may be formed on a surface of the metal substrate. The metal substrate with the conformal metal chalcogenide layer may be immersed in a nonaqueous liquid electrolyte solution comprising a lithium salt dissolved in a polar aprotic organic solvent. An electrical potential may be established between the metal substrate and a counter electrode immersed in the nonaqueous liquid electrolyte solution such that lithium ions in the electrolyte solution are reduced to metallic lithium and deposited on the surface of the metal substrate over the metal chalcogenide layer to form a conformal lithium metal layer on the surface of the metal substrate over the metal chalcogenide layer.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: October 6, 2020
    Assignee: GM Global Technology Operations LLC
    Inventors: Fang Dai, Shuru Chen, Meinan He, Mei Cai
  • Patent number: 10782427
    Abstract: A radiation detector has a structure enabling suppression of polarization in a thallium bromide crystalline body and suppression of corrosion of an electrode in the air. The radiation detector comprises a first electrode, a second electrode, and a thallium bromide crystalline body provided between the first and second electrodes. At least one of the first electrode and the second electrode includes an alloy layer. The alloy layer is comprised of an alloy of metallic thallium and another metal different from the metallic thallium.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: September 22, 2020
    Assignee: HAMAMATSU PHOTONIX K.K.
    Inventors: Masanori Kinpara, Toshiyuki Onodera, Keitaro Hitomi
  • Patent number: 10752998
    Abstract: Disclosed herein is an aging resistance coating film for a hub, sequentially comprising an aluminum alloy matrix, a silane conversion film, a high-gloss organic resin coating, a periodic variable alloy black chromium coating film and a transparent resin coating. In the coating film, the thickness of the black chromium coating film is increased and the blackness thereof is adjusted according to different content of C. The residual stress of the deposited metal layer is reduced, the problem of cracking during heating and rapid cooling of the coating film is solved, and the binding force between the coating film and the underlying high-gloss resin material is improved. Also disclosed herein is a method for forming an aging resistance coating film for a hub, comprising: (1) silane pretreatment, (2) spraying of high-gloss medium powder, (3) PVD coating, and (4) spraying of transparent powder.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: August 25, 2020
    Assignee: CITIC Dicastal Co., Ltd.
    Inventors: Zaide Wang, Huanming Ma, Junfu Li, Shengchao Zhang, Guangcai Chen, Meng Liu
  • Patent number: 10703673
    Abstract: An architectural transparency includes a substrate; a first dielectric layer over at least a portion of the substrate, a first metallic layer over the first dielectric layer, a first primer layer over the first metallic layer, a second dielectric layer over the first primer layer, a second metallic layer over the second dielectric layer, a second primer layer over the second metallic layer, a third dielectric layer over the second primer layer, a third metallic layer over the third dielectric layer, a third primer layer over the third dielectric layer, and a fourth dielectric layer over the third primer layer. At least one of the metallic layers is a subcritical metallic layer.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: July 7, 2020
    Assignee: Vitro Flat Glass LLC
    Inventors: Adam D. Polcyn, Andrew V. Wagner, Harry Buhay, Abhinav Bhandari, James J. Finley, Paul R. Ohodnicki, Jr., Dennis J. O'Shaughnessy, Jeffrey A. Benigni, Paul A. Medwick, James P. Thiel
  • Patent number: 10689748
    Abstract: At least one layer in a coating located on a surface of a substrate is a domain structure layer constituted of two or more domains different in composition. The average value of the size of each of first domains, defined as the diameter of a virtual circumcircle in contact with each first domain, is 1 nm to 10 nm. The average value of the nearest neighbor distance of each first domain, defined as the length of the shortest straight line connecting the center of the circumcircle with the center of another circumcircle adjacent to the circumcircle, is 1 nm to 12 nm. 95% or more of the first domains has a size within ±25% of the average value of the size, and 95% or more of the first domains has a nearest neighbor distance within ±25% of the average value of the nearest neighbor distance.
    Type: Grant
    Filed: July 6, 2016
    Date of Patent: June 23, 2020
    Assignees: Sumitomo Electric Industries, Ltd., Mimsi Materials AB
    Inventors: Yoshiharu Utsumi, Paer Christoffer Arumskog, Keiichi Tsuda, Konstantinos Sarakinos, Daniel Gunnar Magnfaelt
  • Patent number: 10669620
    Abstract: A vapor deposition apparatus disclosed by an embodiment comprises: a vacuum chamber (8); a mask holder (15) for holding a deposition mask 1; a substrate holder (29) for holding a substrate for vapor deposition (2); an electromagnet (3) disposed above a surface; a vapor deposition source 5 for vaporizing or sublimating a vapor deposition material; and a heat pipe (7) including at least a heat absorption part (71) and a heat dissipation part (72), the heat absorption part being in contact with the electromagnet (3), and the heat dissipation part being derived to an outside of the vacuum chamber (8). The heat pipe (7) and the electromagnet (3) are in intimate contact with each other at an area of a contact part between the heat pipe (7) and the electromagnet (3), the area being equal to or more than a cross-sectional area within an inner perimeter of a coil (32).
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: June 2, 2020
    Assignee: Sakai Display Products Corporation
    Inventors: Susumu Sakio, Katsuhiko Kishimoto
  • Patent number: 10665543
    Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.
    Type: Grant
    Filed: June 18, 2018
    Date of Patent: May 26, 2020
    Assignee: Texas Instruments Incorporated
    Inventors: Jeffrey A. West, Kezhakkedath R. Udayakumar, Eric H. Warninghoff, Alan G. Merriam, Rick A. Faust
  • Patent number: 10654747
    Abstract: A coated article includes a substrate, a first dielectric layer, a subcritical metallic layer having discontinuous metallic regions, a primer over the subcritical layer, and a second dielectric layer over the primer layer. The primer can be a nickel-chromium alloy. The primer can be a multilayer primer having a first layer of a nickel-chromium alloy and a second layer of titania.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: May 19, 2020
    Assignee: Vitro Flat Glass LLC
    Inventors: Adam D. Polcyn, Paul A. Medwick, Andrew V. Wagner, Paul R. Ohodnicki, James P. Thiel, Dennis J. O'Shaughnessy, Benjamin Lucci
  • Patent number: 10643843
    Abstract: The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: May 5, 2020
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.
    Inventors: Jun Wang, Boyu Dong, Bingliang Guo, Yujie Geng, Huaichao Ma
  • Patent number: 10636670
    Abstract: A method of planarizing a semiconductor device includes forming a first region and a second region on a semiconductor substrate. The first region has a larger thickness than a thickness of the second region. An interlayer dielectric layer is conformally deposited on the first region and the second region. A photoresist is formed on the second region. A bottom anti-reflective coating layer is formed on the photoresist, first region and second region. A planarization process is performed to the semiconductor substrate. The planarization process to the first region and the second region includes removing portions of the interlayer dielectric layer, the photoresist and the BARC layer.
    Type: Grant
    Filed: January 29, 2018
    Date of Patent: April 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Jen Tsai, Yuan-Tai Tseng, Shih-Chang Liu
  • Patent number: 10636635
    Abstract: A device for cooling a target, having a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to the cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, characterized in that between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to the one side of the additional thermally conductive plate that faces the cooling side.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: April 28, 2020
    Assignee: Oerlikon Surface Solutions AG, Pfäffikon
    Inventors: Denis Kurapov, Siegfried Krassnitzer
  • Patent number: 10593931
    Abstract: An electrochemical cell comprising a lithium metal negative electrode layer physically and chemically bonded to a surface of a negative electrode current collector via an intermediate metal chalcogenide layer. The intermediate metal chalcogenide layer may comprise a metal oxide, a metal sulfide, a metal selenide, or a combination thereof. The intermediate metal chalcogenide layer may be formed on the surface of the negative electrode current collector by exposing the surface to a chalcogen in gas phase. Then, the lithium metal negative electrode layer may be formed on the surface of the negative electrode current collector over the intermediate metal chalcogenide layer by contacting at least a portion of the metal chalcogenide layer with a source of lithium such that the lithium actively wets the metal chalcogenide layer and forms a conformal lithium metal layer on the surface of the negative electrode current collector over the metal chalcogenide layer.
    Type: Grant
    Filed: January 4, 2018
    Date of Patent: March 17, 2020
    Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Keegan Adair, Fang Dai, Mei Cai
  • Patent number: 10553780
    Abstract: The invention relates to a method for producing a polycrystalline ceramic film on a surface (12) of a substrate (10), in which a particle stream is directed onto the surface (12) and the ceramic film is formed by deposition of the particles onto the surface (12), wherein the particle stream is directed by means of a diaphragm onto the surface (12) along a preferred direction until a first specified layer thickness is reached, the preferred direction and a surface normal of the surface (12) enclosing a specified angle of incidence. According to the invention, the diaphragm is removed from the particle stream after the specified layer thickness has been reached, and additional particles are directed onto the surface (12) until a specified second layer thickness has been reached.
    Type: Grant
    Filed: June 18, 2013
    Date of Patent: February 4, 2020
    Assignee: Siemens Aktiengesellschaft
    Inventors: Matthias Schreiter, Wolfram Wersing
  • Patent number: 10526695
    Abstract: A sputter unit is introduced comprising a housing, a gas inlet, an interface for removable connecting the sputter unit to a vacuum chamber, a gas outlet arranged for supplying a process gas received via the gas inlet to the vacuum chamber, an interface for removable connecting the sputter unit to a base unit comprising a vacuum pump for generating a vacuum in the vacuum chamber, and a transformer arranged in the housing for increasing a supply voltage into an ionisation voltage for ionising the process gas supplied via the gas outlet to the vacuum chamber.
    Type: Grant
    Filed: May 6, 2016
    Date of Patent: January 7, 2020
    Assignee: safematic GmbH
    Inventors: Walter Colleoni, Patrick Capeder, Christof Graf
  • Patent number: 10522695
    Abstract: A multilayer stack is described. The multilayer stack includes: (i) one or more inorganic barrier layers for reducing transport of gas or vapor molecules therethrough; (ii) an inorganic reactive layer disposed adjacent to one or more of the inorganic barrier layers, and the reactive layer capable of reacting with the gas or the vapor molecules; and (iii) wherein, in an operational state of the multilayer stack, the vapor or the gas molecules that diffuse through one or more of the inorganic barrier layers react with the inorganic reactive layer, and thereby allow said multilayer stack to be substantially impervious to the gas or the vapor molecules.
    Type: Grant
    Filed: January 27, 2012
    Date of Patent: December 31, 2019
    Assignee: VITRIFLEX, INC.
    Inventors: Ravi Prasad, Dennis R. Hollars
  • Patent number: 10511021
    Abstract: A nonaqueous electrolyte secondary battery has both high capacity and high regeneration. A nonaqueous electrolyte secondary battery includes a positive electrode, a negative electrode, and a nonaqueous electrolyte. The positive electrode contains a Ni-containing lithium transition metal oxide having a layered structure and also contains a tungsten compound and/or a molybdenum compound. The percentage of Ni is greater than 90 mole percent with respect to the molar amount of the lithium transition metal oxide. The amount of the compound is 0.1 mole percent to 1.5 mole percent with respect to the molar amount of the lithium transition metal oxide in terms of tungsten element and/or molybdenum element.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: December 17, 2019
    Assignee: SANYO Electric Co., Ltd.
    Inventors: Takaaki Oka, Kaoru Nagata, Manabu Takijiri, Takeshi Ogasawara
  • Patent number: 10502878
    Abstract: Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: December 10, 2019
    Assignee: GUARDIAN GLASS, LLC
    Inventors: Guowen Ding, Jeremy Cheng, Muhammad Imran, Minh Huu Le, Daniel Schweigert, Yongli Xu, Guizhen Zhang
  • Patent number: 10487393
    Abstract: In one embodiment, a semiconductor manufacturing apparatus includes a carrier having first and second ends extending in a first direction, and third and fourth ends extending in a second direction and being not shorter than the first and second ends. The apparatus further includes a member holder having a magnet placement face on which first and second magnetic-pole portions are placed, the magnet placement face having fifth and sixth ends extending in the first direction and being shorter than the first and second ends, and seventh and eighth ends extending in the second direction, being longer than the fifth and sixth ends, and being longer than the third and fourth ends. The apparatus further includes a carrier transporter transporting the carrier along the first direction. The carrier transporter can transport the carrier such that the third and fourth ends pass under a center line of the magnet placement face.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: November 26, 2019
    Assignee: Toshiba Memory Corporation
    Inventors: Tatsuhiko Miura, Kazuhiro Murakami
  • Patent number: 10449532
    Abstract: Exemplary embodiments of methods and systems for hydrogen production using an electro-activated material (catalyst) are provided. The catalysts can be chosen from various elements that have characteristics that fall within a particular range. In some exemplary embodiments, a material can be electro-activated and used as a catalyst in a chemical reaction with a fuel such as water or another hydrogen containing molecule. Another fuel can also be added, such as aluminum, to generate hydrogen. Controlling the temperature of the reaction, the amount of the catalyst and/or the amounts of aluminum can provide hydrogen on demand at a desired rate of hydrogen generation.
    Type: Grant
    Filed: April 24, 2014
    Date of Patent: October 22, 2019
    Inventor: Douglas Howard Phillips
  • Patent number: 10446403
    Abstract: A wafer processing method for processing a wafer having, on a face side, a device formed in each of areas demarcated by a plurality of crossing projected cutting lines includes a holding step of holding the wafer on a chuck table with the face side exposed and a cutting step of cutting the wafer held on the chuck table along the projected cutting lines with a cutting blade. In the cutting step, cutting is carried out while cutting water with a low resistivity is supplied to the face side of the wafer and cutting water with a high resistivity is supplied to the cutting blade.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: October 15, 2019
    Assignee: DISCO CORPORATION
    Inventor: Kazuma Sekiya
  • Patent number: 10435301
    Abstract: The present application provides a method for producing a graphene quantum dot using thermal plasma, comprising injecting a carbon source into a thermal plasma jet to pyrolyze the carbon source so as to form a carbon atomic beam and allowing the carbon atomic beam to flow in a tube connected to an anode to produce a graphene quantum dot. The present application also provides an isolated graphene quantum dot from different types of graphene quantum dots and method for obtaining each of an isolated graphene quantum dot from different types of graphene quantum dots.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: October 8, 2019
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Jung Sang Suh, Juhan Kim, Myung Woo Lee
  • Patent number: 10421691
    Abstract: A joined body 20 according to the present invention includes a first member 22 made of a porous ceramic, a second member 24 made of a metal, and a joint 30 formed of an oxide ceramic of a transition metal, the joint 30 joining the first member 22 to the second member 24. Alternatively, a joined body may include a first member made of a dense material, a second member made of a dense material, and a joint formed of an oxide ceramic of a transition metal, the joint joining the first member to the second member.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: September 24, 2019
    Assignee: NGK Insulators, Ltd.
    Inventors: Yunie Izumi, Yoshimasa Kobayashi, Kenji Morimoto, Shinji Kawasaki
  • Patent number: 10421125
    Abstract: An additive manufacturing apparatus includes a platform, a dispenser to dispense layers of feed material on the platform, and a fusing system including an energy source to generate an energy beam having an adjustable intensity profile, an actuator to cause the energy beam to traverse across an outermost layer of feed material, and a controller coupled to the actuator and the energy source. The controller is configured to cause the energy source to adjust the intensity profile of the energy beam on the outermost layer of feed material based on a traversal velocity and/or a traversal direction of the light beam across the outermost layer of feed material.
    Type: Grant
    Filed: July 20, 2017
    Date of Patent: September 24, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Hou T. Ng, Ron Naftali, Christopher G. Talbot
  • Patent number: 10418660
    Abstract: In manufacturing a lithium battery, a plasma deposition of a layer of LiPON is made on a structure that includes an anode contact zone and a cathode contact zone. Before making the deposition of layer of LiPON, a conductive portion is deposited to short the anode contact zone to the cathode contact zone. After the deposition of the layer of LiPON in completed, the conductive portion is cut to sever the short between the anode and cathode contact zones.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: September 17, 2019
    Assignee: STMicroelectronics (Tours) SAS
    Inventors: Julien Ladroue, Fabien Pierre
  • Patent number: 10407767
    Abstract: A method is provided for depositing a layer on a substrate inside a vacuum chamber by a magnetron sputtering device comprising at least two magnetron cathodes, each equipped with one target, at least one additional electrode, wherein a separate power supply unit is allocated to each magnetron cathode and wherein, in addition to at least one working gas, at least one reactive gas is introduced into the vacuum chamber. In a first phase, a pulsed negative direct current voltage is conducted from each power supply unit to the corresponding magnetron cathode, wherein the power supply units are operated in the push-pull mode. In a second phase, the pulsed direct current voltages provided by the power supply units are switched between the corresponding magnetron cathode and the additional electrode. An electric voltage is applied to the substrate or an electrode at the back of the substrate.
    Type: Grant
    Filed: September 6, 2017
    Date of Patent: September 10, 2019
    Assignee: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Hagen Bartzsch, Peter Frach, Jan Hildisch
  • Patent number: 10408976
    Abstract: A light transmissive member includes a substrate having a light transmission property, wherein on one surface of the substrate, an antireflection layer in which a low-refractive index layer composed mainly of silicon oxide (SiO2) and a high-refractive index layer composed mainly of silicon nitride (SiN) are alternately stacked is formed, and on the other surface of the substrate, an antistatic layer including at least a transparent electrically conductive film layer is formed.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: September 10, 2019
    Assignee: Seiko Epson Corporation
    Inventors: Daiki Furusato, Katsumi Suzuki
  • Patent number: 10352894
    Abstract: The limiting-current type gas sensor includes: a porous lower electrode disposed on a substrate; an insulating film disposed on the porous lower electrode; a solid electrolyte layer disposed on the porous lower electrode in an opening formed by patterning the insulating film, and further disposed on the insulating film surrounding the opening; and a porous upper electrode disposed on the solid electrolyte layer, wherein the insulating film realizes non-contact between an edge face of the solid electrolyte layer and the porous lower electrode, in order to suppress the intake of oxygen (O) ion from the edge face of the solid electrolyte layer, and thereby the surface-conduction current component between the porous upper electrode and the porous lower electrode can be reduced. There can be provided the limiting-current type gas sensor capable of reducing the surface-conduction current component and realizing low power consumption.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: July 16, 2019
    Assignee: ROHM CO., LTD.
    Inventor: Shunsuke Akasaka
  • Patent number: 10343893
    Abstract: Low friction coating of the present invention includes a boron-doped zinc oxide thin film, wherein piezoelectric polarization in a vertical direction perpendicular to a film surface and a lateral direction horizontal to the film surface occurs and a magnitude of the piezoelectric polarization in the vertical direction is within 150 pm and a magnitude of the piezoelectric polarization in the lateral direction is within 100 pm at 90% or more of measurement points. This makes it possible to greatly decrease the friction in a nanometer order.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: July 9, 2019
    Assignee: NATIONAL INSTITUTE FOR MATERIALS SCIENCE
    Inventors: Michiko Sasaki, Masahiro Goto, Akira Kasahara, Masahiro Tosa
  • Patent number: 10328672
    Abstract: Disclosed herein is a method for applying metals to clay. More particularly, the present invention relates to applying malleable metals, such as silver, to clay, such that the metal attaches to the clay and as an added feature forms beads on the surface of the clay.
    Type: Grant
    Filed: June 12, 2017
    Date of Patent: June 25, 2019
    Inventor: Susan Kadish
  • Patent number: 10325779
    Abstract: A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces.
    Type: Grant
    Filed: March 23, 2017
    Date of Patent: June 18, 2019
    Assignee: Tokyo Electron Limited
    Inventors: Antonio L.P. Rotondaro, Wallace P. Printz
  • Patent number: 10312287
    Abstract: A semiconductor apparatus may include a first circuit forming region formed over a substrate, a first interlayer dielectric layer formed over the first circuit forming region, a first metal layer formed over the first interlayer dielectric layer, a second interlayer dielectric layer formed over the first metal layer, and a second circuit forming region formed over the second interlayer dielectric layer. A first circuit and a second circuit that are included in the first circuit forming region and a third circuit that is included in the second circuit forming region may be electrically coupled to each other.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: June 4, 2019
    Assignee: SK hynix Inc.
    Inventor: Jae Seok Kang
  • Patent number: 10294148
    Abstract: The invention relates to solar control glazing comprising, on at least one of the surfaces of a glass substrate, a system of layers including at least one solar-radiation-absorbing layer and dielectric layers surrounding said solar-radiation-absorbing layer. According to the invention, the solar-radiation-absorbing layer is a metal layer based on tungsten alloyed with at least nickel. The layer system comprises: between the substrate and the metal layer, at least one layer of a dielectric material based on oxide, nitride or oxynitride of silicon or aluminum, or mixed aluminum/silicon nitrides; and, on top of the solar-radiation-absorbing layer, at least one layer of a dielectric material based on one of said compounds.
    Type: Grant
    Filed: February 14, 2014
    Date of Patent: May 21, 2019
    Assignee: AGC GLASS EUROPE
    Inventors: Stijn Mahieu, Laurent Dusoulier
  • Patent number: 10256290
    Abstract: A method for treating a compound semiconductor substrate, in which method in vacuum conditions a surface of an In-containing III-As, III-Sb or III-P substrate is cleaned from amorphous native oxides and after that the cleaned substrate is heated to a temperature of about 250-550° C. and oxidized by introducing oxygen gas onto the surface of the substrate. The invention relates also to a compound semiconductor substrate, and the use of the substrate in a structure of a transistor such as MOSFET.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: April 9, 2019
    Assignee: Comptek Solutions Oy
    Inventors: Pekka Laukkanen, Jouko Lang, Marko Punkkinen, Marjukka Tuominen, Veikko Tuominen, Johnny Dahl, Juhani Vayrynen
  • Patent number: 10256394
    Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: April 9, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shumpei Omine, Tadaomi Daibou, Yushi Kato, Naoki Hase, Junichi Ito
  • Patent number: 10236330
    Abstract: A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode. The first thin film transistor is located below the second thin film transistor.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: March 19, 2019
    Assignee: Japan Display Inc.
    Inventor: Satoshi Maruyama
  • Patent number: 10233536
    Abstract: A method of discriminating a state of a sputtering apparatus in which, by sputtering a target, a film is formed on a substrate disposed to lie opposite to the target, the discrimination being made, prior to the film formation on the substrate, as to whether an atmosphere in the vacuum chamber is in a state fit for film formation. As the sputtering apparatus, use is made of one provided inside the vacuum chamber with an isolated space which is isolated from the vacuum chamber by an isolating means (6, 71˜73), the isolated space being for the target and the substrate to lie therein opposite to each other, the sputtering apparatus being so arranged that the isolated space is evacuated accompanied by the evacuation in the vacuum chamber. The vacuum chamber is evacuated to a predetermined set pressure and a gas is introduced therein in this state.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: March 19, 2019
    Assignee: ULVAC, INC.
    Inventors: Shinya Nakamura, Yoshinori Fujii
  • Patent number: 10221477
    Abstract: A method is provided for producing a visual hydrogen sensor and to a sensor produced in this manner, the sensor allowing the presence of hydrogen gas in a medium to be detected by the naked eye as a result of a change of color in the sensor. The method involves the deposition of thin porous layers of oxides that do not absorb visible light in their completely oxidized state which become colored when they are partially reduced. This deposition is carried out using vapor phase deposition (PVD) in a glancing angle configuration (GLAD). The method also involves the preparation of a solution of an active metal precursor capable of dissociating the hydrogen molecule and a carrier vector and the deposition of this solution on the oxide layer in order to incorporate a minimum quantity of active metal within the pores of the oxide layer in the form of nanoparticles.
    Type: Grant
    Filed: September 29, 2014
    Date of Patent: March 5, 2019
    Assignee: ABENGOA SOLAR NEW TECHNOLOGIES, S.A.
    Inventors: Guillermo Espinosa Rueda, Noelia Martinez Sanz, Agustín Rodríguez González-Elipe, Pedro Castillero Durán, Ángel Barranco Quero, Francisco Yubero Valencia, Juan Pedro Espinos Manzorro, José Cotrino Bautista, Francisco García García
  • Patent number: 10214158
    Abstract: The present invention relates to a decorative part, comprising an electroplated layer array applied to a plastic substrate. On the electroplated layer array, a PVD layer array having an adhesive layer, a mixed layer and a color-providing cover layer is provided, wherein the mixed layer provides for durability, in particular corrosion protection, and the necessary hardness of the surface.
    Type: Grant
    Filed: August 29, 2012
    Date of Patent: February 26, 2019
    Assignee: OERLIKON SURFACE SOLUTIONS AG, PFÄFFIKON
    Inventors: Carlos Ribeiro, Sascha Bauer
  • Patent number: 10196733
    Abstract: A sputtering target comprising an oxide sintered body that includes an indium element, a tin element and a zinc element, wherein the oxide sintered body includes one or more selected from a hexagonal layered compound represented by In2O3(ZnO)m, a hexagonal layered compound represented by InXO3(ZnO)n, a rutile structure compound represented by SnO2 and an ilmenite structure compound represented by ZnSnO3, and a spinel structure compound represented by Zn2SnO4, in the formulas, X is a metal element that can form a hexagonal layered compound together with an indium element and a zinc element, m is an integer of 1 or more and n is an integer of 1 or more, and an agglomerate of the spinel structure compound is 5% or less of the entire sintered body.
    Type: Grant
    Filed: May 31, 2013
    Date of Patent: February 5, 2019
    Assignee: IDEMITSU KOSAN CO., LTD.
    Inventors: Mami Nishimura, Shigeo Matsuzaki, Masashi Ohyama
  • Patent number: 10174711
    Abstract: A piston that moves reciprocally in the cylinder of an internal combustion engine and has a piston skirt that makes sliding contact with the inner wall of the cylinder. Solid lubrication parts are provided on the sliding-contact surface of the piston skirt. The solid lubrication parts include at least one type of silver, silver alloy, copper, or copper alloy, and at least one type of carbon material or carbide ceramics.
    Type: Grant
    Filed: July 31, 2012
    Date of Patent: January 8, 2019
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Ryotaro Takada, Yositaka Tsujii
  • Patent number: 10156010
    Abstract: An embodiment of the invention provides a coated cutting tool having a base material and a hard coating, in which: the hard coating is formed from a nitride or a carbonitride having an Al content of from 50 at. % to 68 at. %, a Cr content of from 20 at. % to 46 at. %, and an Si content of from 4 at. % to 15 at. %, relative to the total amount of metal (including semimetal) elements, and when the total of metal (including semimetal) elements, nitrogen, oxygen, and carbon is designated as 100 at. %, the atomic percentage (at. %) A of metal (including semimetal) elements and the atomic percentage (at. %) B of nitrogen satisfy the relationship 1.03?B/A?1.07; and, in an intensity profile obtained from an X-ray diffraction pattern or a selected area diffraction pattern of a transmission electron microscope, an intensity of a peak from the (200) plane or the (111) plane of a face-centered cubic lattice structure exhibits the maximum intensity.
    Type: Grant
    Filed: March 18, 2015
    Date of Patent: December 18, 2018
    Assignees: HITACHI METALS, LTD., Mitsubishi Hitachi Tool Engineering, Ltd.
    Inventors: Tomoya Sasaki, Kenichi Inoue
  • Patent number: 10125419
    Abstract: Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: November 13, 2018
    Assignee: View, Inc.
    Inventors: Martin John Neumann, Que Anh Song Nguyen, Anshu A. Pradhan, Robert T. Rozbicki, Dhairya Shrivastava, Jason Satern, Todd Martin
  • Patent number: 10109468
    Abstract: A target, in particular a sputtering target, includes a target plate of a brittle material and a back plate. The back plate is connected to the target plate over an area and the target plate has micro cracks which pass through from the front side to the rear side of the target plate and divide the target plate into adjacent fragments. A process is also provided for producing such a target which is suitable, in particular, for the use of extremely high power densities. A vacuum coating process uses at least one such target as a sputtering target and as a result particularly high power densities can be used on the target during the sputtering.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: October 23, 2018
    Assignees: Plansee Composite Materials GmbH, Oerlikon Surface Solutions AG, Pfaeffikon
    Inventors: Peter Polcik, Sabine Woerle, Siegfried Krassnitzer, Juerg Hagmann
  • Patent number: 10103282
    Abstract: The present invention provides transparent semiconducting films for constructing a translucent electrode that possess a high transparency and low sheet resistance. Further, the transparent semiconducting films have a high light diffusion property, which is capable to be a translucent front/back electrode in a light-emitting device for improving the light emission efficiency and a front/intermediate/back electrode in a multi-junction solar cell for improving the light trapping effect. Related fabrication method and how they are applied in different fields are also provided in the present invention.
    Type: Grant
    Filed: September 13, 2017
    Date of Patent: October 16, 2018
    Assignee: Nano and Advanced Materials Institute Limited
    Inventors: Chung Pui Chan, Wing Hong Choi, Kwok Keung Paul Ho
  • Patent number: 10100398
    Abstract: According to one embodiment, a perpendicular magnetic recording layer comprises a granular film type recording layer and a continuous film type recording layer. The granular film type recording layer comprises a first granular film type recording layer in which magnetic crystal grains in a film plane has an average crystal grain diameter of 3 to 7 nm, and a second granular film type recording layer including magnetic crystal grains having an in plane average crystal grain diameter larger than that of the magnetic crystal grains of the first granular film type recording layer.
    Type: Grant
    Filed: January 21, 2015
    Date of Patent: October 16, 2018
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Tomoyuki Maeda
  • Patent number: 10096725
    Abstract: A method for forming an anti-reflective coating (ARC) includes positioning a substrate below a target and flowing a first gas to deposit a first portion of the graded ARC onto the substrate. The method includes gradually flowing a second gas to deposit a second portion of the graded ARC, and gradually flowing a third gas while simultaneously gradually decreasing the flow of the second gas to deposit a third portion of the graded ARC. The method also includes flowing the third gas after stopping the flow of the second gas to form a fourth portion of the graded ARC. In another embodiment a film stack having a substrate having a graded ARC disposed thereon is provided. The graded ARC includes a first portion, a second portion disposed on the first portion, a third portion disposed on the second portion, and a fourth portion disposed on the third portion.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: October 9, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Yong Cao, Daniel Lee Diehl, Rongjun Wang, Xianmin Tang, Tai-chou Papo Chen, Tingjun Xu
  • Patent number: 10071516
    Abstract: A mold for manufacturing a reel component member, the mold comprises a hub formation portion configured to form a circular tube shaped hub; a flange formation portion configured to form a flange integrally provided at one end portion of the hub; a bottom plate formation portion configured to form a bottom plate that is provided with a ring shaped reel gear at the one end portion or another end portion of the hub and that includes a plurality of hole portions provided at equal intervals on the reel gear; a gate that is disposed further to a radial direction inside than a wall face of the hub formation portion that is configured to form an inner peripheral face of the hub; and an anticorrosion coating that is applied to a wall face of the hub formation portion that is configured to form an outer peripheral face of the hub.
    Type: Grant
    Filed: February 9, 2016
    Date of Patent: September 11, 2018
    Assignee: FUJIFILM CORPORATION
    Inventor: Yosuke Sumiya
  • Patent number: 10074872
    Abstract: A solid electrolyte includes an oxynitride that contains an alkaline-earth metal, phosphorus, oxygen, and nitrogen. A P2p spectrum obtained by an X-ray photoelectron spectroscopy measurement of the oxynitride contains a peak component originating from a P—N bond.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: September 11, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Satoshi Shibata, Yu Nishitani, Takuji Tsujita
  • Patent number: 10043727
    Abstract: A compound semiconductor device includes a first protection film which covers a surface of a compound semiconductor layer, where the first protection film is an insulating film whose major constituent is Si and at least one element between N and O, and a hydrophobic layer containing Si—CxHy is formed at a surface thereof.
    Type: Grant
    Filed: February 15, 2016
    Date of Patent: August 7, 2018
    Assignee: FUJITSU LIMITED
    Inventors: Shirou Ozaki, Naoya Okamoto