Abstract: A method of altering the topography of a trailing edge of a slider is disclosed, the slider having a substrate surface, at least one magnetic recording head imbedded in an alumina undercoat, and a vertical axis relative to the substrate surface. The steps include first applying an alumina overcoat to at least the trailing edge, followed by lapping at least the trailing edge of the slider. The slider (or sliders) is then placed on a pallet that rotates, exposing the trailing edge to an ion beam. The ion beam is generated using an etchant gas such as Argon, or a mixture of gases such as Argon and Hydrogen, or Argon and CHF3. The trailing edge (or trailing edges) are then exposed at least once to the ion beam at a predetermined milling angle and predetermined time, the milling angle being the angle made by the ion beam relative to the vertical axis. The milling angle is typically between 0° and 85°.

Abstract: This invention relates to a transmission-polarizing filter comprising a substrate (1) and a partially metallized grating (2) carried by this substrate (1). The grating is a holographic grating, having a profile (3) with facets (4, 5) with, alternately, positive slopes (4) and negative slopes (5), whereas one of both sets of these facets with positive or negative slopes is partially metallized. The filter is manufactured by making a holographic grating on a substrate, by metallizing the said substrate and by machining the said substrate partially according to an ionic process.

Abstract: Cryofilm/organic contaminants are removed from cryogenically cooled surfaces such as spacecraft cryo-telescope mirrors by sputtering and chemical reaction with a low energy plasma having an average ion energy of not more than about 30 eV, and preferably in the approximate range of 5-20 eV. When the reactive plasma's freezing point is higher than the temperature of the surface to be cleaned, the cryofilm and embedded hydrocarbons are first removed with a non-reactive plasma having a freezing point less than the surface temperature, the reactive plasma is then used to remove residual organic contaminants left on the surface by chemical reaction, and finally another inert plasma is applied to remove reactive plasma frozen to the surface; the two inert plasmas are preferably formed from the same gas.

Abstract: The present invention provides a read/write head for use in a hard disk drive system. The head includes a self-adjusting sacrificial pad constructed of a material relatively softer than the recording medium of the recording system. The pad, present on an air-bearing surface of the head, generates an area of negative pressure, which acts to pull the head toward a magnetic disk of the disk drive system. Upon contact with certain asperities in the generally smooth surface of disk, the sacrificial pad wears down. As the pad wears, the negative pressure created by the pad decreases, allowing the head to fly further from the disk until there is no more contact with the disk. In this way the head of the present invention flies as close as possible to the disk. The sacrificial pad also acts to protect the read and write elements of the head.

Abstract: The method for manufacturing an ink jet recording head includes forming an ink pool for supplying ink to a nozzle for jetting ink on a substrate. The method also includes forming, in sequence on the substrate, a diaphragm for pressurizing ink in the ink chamber, a piezoelectric thin film serving as a pressurization source for the diaphragm, and an electrode for the piezoelectric thin film. Patterning of both the piezoelectric thin film and the electrode is done at the same time.

Abstract: The invention concerns a device and a method for ion beam etching for producing an etched surface (2) on a semiconductor (1) or insulant The device comprises a positive ion source (20), means for guiding (23) an ion beam (42), a system for detecting the spatial and temporal interaction of the ions and the etched surface, means for interrupting (24) the beam and means for displacing the etched surface relatively to the beam. A processing unit (29) is connected to the displacing means, to the detecting means and to the beam interrupting means and controls, preferably iteratively, successive, operations detecting interaction of the ion beam and the etched surface, interrupting the beam, relative displacing of the etched surface with respect to the beam position and restoring the beam.

Abstract: A method of making a micro-mirror light beam switch having a thin flexible movable support member for supporting a thin central reflective mirror surface thereon and for supporting a plurality of thin unimorph piezoelectric cantilevered mirror actuators mechanically coupled between a fixed substrate and movable hinging portions of the thin movable support member. The method employs thin film deposition techniques and photolithography for readily forming the extremely thin switch, whereby the components thereof are substantially co-planar for precisely controlled, multi-axial micro-mirror motion and low voltage operation necessary for the rapid switching of optical traffic from fiber to fiber in the next-generation optical networks.

Abstract: In one aspect, the invention encompasses a method of etching insulative materials which comprise complexes of metal and oxygen. The insulative materials are exposed to physical etching conditions within a reaction chamber and in the presence of at least one oxygen-containing gas. In another aspect, the invention encompasses a method of forming a capacitor. An electrically conductive first layer is formed over a substrate, and a second layer is formed over the first layer. The second layer is a dielectric layer and comprises a complex of metal and oxygen. A conductive third layer is formed over the second layer. The first, second and third layers are patterned into a capacitor construction. The patterning of the second layer comprises exposing the second layer to at least one oxygen-containing gas while also exposing the second layer to physical etching conditions.

Abstract: Atomic level surface smoothing utilizing GCIB to smooth and round the IOL's outer edges to reduce the “edge effect” and its resultant glare. In addition, the present invention provides, atomic level surface smoothing utilizing GCIB to smooth the IOL's posterior and/or anterior surfaces to improve the adhesion of the IOL to the capsule, preventing cell in-growth and their resultant secondary cataract. The GCIB smoothed surfaces will also reduce inflammatory response by reducing foreign particles on the surface and by reducing the micro-roughness normally inherent on the IOL surface.

Abstract: The application of gas cluster ion beam (GCIB) technology in order to modify the surface of a surgical implant such as the components of an artificial hip joint, thereby substantially reducing wear debris and osteolysis complications. The approach of the surface modification comprises an atomic level surface smoothing utilizing GCIB to super smooth the femoral heads and/or the surfaces of the acetabular cups to reduce frictional wear at the interface of the bearing surfaces. A reduction in polyethylene debris and metal debris by GCIB smoothing on one or both bearing surfaces of a surgical implant reduces osteolysis, results in a substantial cost savings to the healthcare system, and reduces patient pain and suffering.

Abstract: After a Ta radiation absorber 13 is subjected to reactive ion overetching to form a desired pattern till an upper portion of the SiO2 buffer film 12 is removed, the buffer film 12 is removed by two steps of reactive sputter pre-underetching and final wet etching. In the wet etching, a substrate is rotated while spraying a dilute hydrofluoric acid solution, spray and rotation are ceased, the substrate is illuminated with a light beam to detect regularly reflected light, the detected signal is amplified, differentiated and compared with a reference voltage to detect an etching endpoint, and etching is ceased after a predetermined time has elapsed from the detection of the etching endpoint. At an inspection step, an image of a reflective mask is obtained with a microscope and it is determined that the side etching amount of the buffer film is short if the luminance, at a point of the maximum change rate on a luminance curve around the edge of the Ta radiation absorber 13, is lower than a reference value.

Abstract: The present invention provides apparatus and methods to carry out the task of both reducing the surface roughness (smoothing) and improving the thickness uniformity of, preferably, but not limited thereto, the top silicon film of a silicon-on-insulator (SOI) wafer or similar thin-film electronic and photonic materials (workpiece). It also provides a method and apparatus for smoothing the surface of a (preferably) SOI wafer (workpiece) and for making the surface of the silicon film of a (preferably) SOI wafer cleaner and more free from contaminants.

Abstract: A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering.

Abstract: In a magnetoresistive element, deposition of a conductor layer in a DC magnetron sputtering apparatus causes application of tensile stress to the conductor layer, causing the problem of readily producing separation of the conductor layer. In the present invention, a conductor layer is formed so that the crystal face spacing in the direction perpendicular to the film plane is larger than the crystal face spacing of a bulk material. This permits application of compression stress to the conductor layer, preventing separation of the conductor layer.

Abstract: The use of ion beam processing in preparation of a substrate's surfaces, particularly a polyimide film such as Upilex®-SS, prior to depositing a metal on the substrate surfaces. In one aspect, the ion beam processing can be used to remove relatively unique forms of surface contaminants without requiring additional cleaning by traditional methods such as chemical or plasma cleaning. In another aspect, the ion beam processing utilizing an anode layer ion source can be used to prepare polyimide films prior to metal deposition to produce substrates having surprisingly good peel strengths. In still another aspect, ion beam processing can be used to minimize differences in surface characteristics between opposite sides of a substrate.

Abstract: Methods and apparatus for etching substrates such as silicon wafers are provided. In one specific approach, a surface of the substrate assembly is covered with a resist that is patterned to define features to be etched. In this approach, the surface is then exposed to a plasma in a plasma etcher so that surface areas not covered with the resist are etched, while the thickness of the resist increases or etches at a rate that is at least ten times slower than that of the exposed areas of the surface. This etching process can be followed with a conventional plasma etch. By combining the etching that increases the resist thickness with the conventional etching of resist in which the resist thins during etching, features having high aspect ratios can be etched.

Abstract: A focused particle beam system, according to one embodiment of the invention, precisely shapes a pole-tip assembly formed by a multi-layer device having a first layer with a first structural element, a second layer with a second structural element, and a shielding layer with a shielding element, the shielding element being located between the first layer and the second layer. The focused particle beam system mills the second structural element without irradiating a first structural element. The system images a selected portion of the multi-layer device to locate the shielding element and thereby avoids irradiating the first structural element. The shielding element separates the first structural element from the second structural element. Based on the location of the shielding element, the system images and mills the second structural element without irradiating the first structural element.

Abstract: A three-step method is used to repair an opaque defect in a photomask having a transparent substrate, and a light transmission portion disposed on the substrate and defining an opening the image of which is to be transferred to a layer on a semiconductor substrate. First, the thickness of the opaque defect is reduced by etching away only some of the defect. Second, a correction film is selectively formed over the entire surface of the substrate of the photomask in the opening defined by the light transmission portion with the exception of the region occupied by the pre-etched defect. Next, the correction film and the pre-etched defect are simultaneously etched away.

Abstract: A reflective mask having non-reflective and reflective regions. The reflective regions are reflective of light at an inspection wavelength and a semiconductor processing wavelength and the non-reflective regions are substantially non-reflective of light at the inspection wavelength and the semiconductor processing wavelength. The contrast of reflected light off of the non-reflective and reflective regions is greater than 0.210 at either of the two wavelengths.

Abstract: A method is provided for forming a final second pole tip of a write head wherein the final second pole tip is bounded in part by a final top and final first and second side walls, the final first and second side walls being separated by a final track width at an air bearing surface (ABS). The method includes the steps of forming a preliminary second pole tip that is bounded in part by the final top and preliminary first and second side walls. The preliminary first and second side walls are separated by a preliminary width at the ABS that is wider than the final track width. Next, a non-magnetic sacrificial layer is formed on the final top of the preliminary second pole tip. Ion beam milling is then employed for milling the preliminary first and second side walls to form the final second pole tip with the final first and second side walls separated by the final track width with at least a portion of the sacrificial layer remaining on the final top of the final second pole tip.

Abstract: The present invention is directed to prevent generating repair by-products during a repair process of a phase shift mask, and defects on a quartz substrate. According to the present invention, a repair method for phase shift mask in a semiconductor device so as to remove a bridge formed between a phase shift layer on a quartz substrate, comprises the steps of: first repairing the bridge by implanting a charging ion according to a focused ion beam(“FIB”) method; and second repairing the first repaired bridge portion by emitting laser and then removing the bridge.

Abstract: A method of enhancing charged particle beam etching particularly suitable for copper interconnects, includes milling at non-contiguous locations to prevent the formation or propagation of an etch-resistant region within the rastered area. Two or more milling boxes are typically performed, one or more of the boxes having pixel spacing greater than the spot size, with the last box using a conventional pixel spacing (default mill) smaller than the spot size to produce a uniform, planar floor of the etched area.

Abstract: Plasma treatment for producing carbonaceous field emission electron emitters is disclosed. A plasma of ions is generated in a closed chamber and used to surround the exposed surface of a carbonaceous material. A voltage is applied to an electrode that is in contact with the carbonaceous material. This voltage has a negative potential relative to a second electrode in the chamber and serves to accelerate the ions toward the carbonaceous material and provide an ion energy sufficient to etch the exposed surface of the carbonaceous material but not sufficient to result in the implantation of the ions within the carbonaceous material. Preferably, the ions used are those of an inert gas or an inert gas with a small amount of added nitrogen.

Abstract: A thin-film magnetic head comprises a reproducing head and a recording head. The reproducing head includes: a GMR element; a bottom shield layer and a top shield layer for shielding the GMR element; a conductive layer connected to the GMR element; and first to fourth shield gap films placed between the shield layers. A plurality of layers making up the GMR element are formed on the first shield gap film. Reactive ion etching is performed to etch a part of the thickness of these layers. Ion milling is then performed to etch the remaining part. The GMR element is thus formed. The second shield gap film is formed around the GMR element on the first shield gap film.

Abstract: Provided are a method of forming a magnetic layer pattern and a method of manufacturing a thin film magnetic head, which can reduce the number of manufacturing steps and thus reduce the manufacturing time. A precursory nonmagnetic layer and a precursory bottom pole layer are formed in this sequence so as to cover a frame pattern formed on an underlayer (a top shield layer) and having an opening. Then, the precursory nonmagnetic layer and the precursory bottom pole layer are patterned by polishing the overall surface by CMP until at least the frame pattern is exposed, and thus a nonmagnetic layer and a bottom pole are selectively formed. The number of manufacturing steps can be reduced and thus the manufacturing time can be reduced, as compared to the case of forming the nonmagnetic layer and the bottom pole without forming the frame pattern.

Abstract: A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductive plasma generator. The workpiece surface is exposed to a source of energetic ions, the chamber is filled with gas, and the gas is ionized with radio frequency energy to form inductive plasma that surrounds the workpiece. An ion beam mounted above the workpiece scans the workpiece surface with sufficient energy to remove micro irregularities from the workpiece surface.

Abstract: The method of manufacturing a magnetic head is capable of preventing element sections from being damaged by static electricity and which is capable of keeping prescribed characteristics of the magnetic head. The method of the present invention comprises the steps of: forming film layers on a surface of a substrate; etching the film layers to form into prescribed patterns; and forming an element section having prescribed characteristics, wherein a specific section of the substrate, in which the element section is formed, is enclosed by electric conductive film.

Abstract: A method for manufacturing a combination read/write thin film magnetic head comprising the steps of: forming a nonmagnetic material layer on a lower-core layer and forming an upper-core layer having a width smaller than that of the lower-core layer on the nonmagnetic material layer; leaving the section of said nonmagnetic material layer sandwiched between the lower-core layer and the upper-core layer as a gap layer and removing the nonmagnetic material layer not covered by the upper-core layer, said step for removing said nonmagnetic material being performed by an anisotropic plasma etching process using a CF4 based gas; trimming both ends of the facing surfaces, to be in contact with said gap layer, of the lower-core layer so as to equalize the width of the facing surface with the width of the upper-core layer, and forming a prominence above the lower-core layer facing the upper-core layer through the gap layer; and forming grades on both upper surfaces of the lower-core layer extending from the base ends of

Abstract: A substrate on which a plurality of thin films having a plurality of cross-sections corresponding to the cross-section of a micro-structure are formed is placed on a substrate holder. The substrate holder is elevated to bond a thin film formed on the substrate to the surface of a stage, and by lowering the substrate holder, the thin film is separated from the substrate and transferred to the stage side. The transfer process is repeated to laminate a plurality of thin films on the stage and to form the micro-structure. Accordingly, there are provided a micro-structure having high dimensional precision, especially high resolution in the lamination direction, which can be manufactured from a metal or an insulator such as ceramics and can be manufactured in the combined form of structural elements together, and a manufacturing method and an apparatus thereof.

Abstract: The holding unit of a vacuum machining device is capable of preventing a work piece from being excessively heated and capable of stably machining the work piece. The holding unit comprises: a holder for holding a work piece; a pressing member for pinching the work piece with the holder; and a heat insulating member being provided to the holder, the heat insulating member contacting the work piece to restrict heat conduction thereto.

Abstract: An ink jet recording head comprising: a nozzle orifice for jetting ink; an ink chamber communicating with the nozzle; a diaphragm for pressurizing ink in the ink chamber; a piezoelectric thin film on the diaphragm; and an electrode for the piezoelectric thin film wherein the piezoelectric thin film and the electrode are patterned to the same shape.

Abstract: A method for forming a magnetoresistive (MR) sensor element. There is first provided a substrate. There is then formed over the substrate a seed layer. There is then formed contacting a pair of opposite ends of the seed layer a pair of patterned conductor lead layer structures. There is then etched, while employing an ion etch method, the seed layer and the pair of patterned conductor lead layer structures to form an ion etched seed layer and a pair of ion etched patterned conductor lead layer structures. Finally, there is then formed upon the ion etched seed layer and the pair of ion etched patterned conductor lead layers structures a magnetoresistive (MR) layered structure. Within the magnetoresistive (MR) sensor element, the pair of patterned conductor lead layer structures may be formed within a pair of recesses within an ion etch recessed dielectric isolation layer.

Abstract: A magneto-optical medium comprises a light-transmissive substrate, a third magnetic layer formed on the light-transmissive substrate, a first magnetic layer formed on the light-transmissive substrate, the first magnetic layer having lower domain wall coercivity and allowing higher domain wall mobility than the third magnetic layer at or around an ambient temperature and a second magnetic layer held between the first magnetic layer and the third magnetic layer, the second magnetic layer having a Curie temperature lower than that of the first magnetic layer and the third magnetic layer, wherein the surface roughness, Ra(d), of the first magnetic layer is smaller than the surface roughness, Ra(m), of the third magnetic layer.

Abstract: Fabrication of an optoelectronic device is enhanced by using a focused ion beam to prepare one or more of the device's facet surfaces. In particular, a facet may be oriented at a nearly arbitrary angled with respect to the waveguide within the device by controlling the orientation between the focused ion beam source and the device waveguide. Such facets are useful as antireflection and refractive beamsteering surfaces.

Abstract: A process for altering surface properties of a mass of metal alloy solder comprising a first metal and a second metal. The process comprises exposing the mass to energized ions to preferentially sputter atoms of the first metal to form a surface layer ratio of first metal to second metal atoms that is less than the bulk ratio. The solder may be located on the surface of a substrate, wherein the process may further comprise masking the substrate to shield all but a selected area from the ion beam. The sputtering gas may comprises a reactive gas such as oxygen and the substrate may be an organic substrate. The process may further comprise simultaneously exposing the organic substrate to energized ions of the reactive gas to roughen the organic substrate surface.

Abstract: Optical components, such as optical semi-isolators, are placed in a fixture that exposes at least a portion of the mounting surface of each optical component when a plasma or ion beam is directed at one side of the fixture, while shielding sensitive surfaces of the optical components (e.g., an optical element mounted within the frame of the optical component) from direct exposure to the plasma or ion beam. Exposure to the plasma or ion beam removes contaminants (e.g., metal oxide) that form on the mounting surface during the fabrication of the optical components when the optical element is mounted within its frame using glass solder in a heated oxygenated environment (e.g., air). By removing enough of the contaminants, the plasma or ion beam cleaning step produces optical components that can be reliably mounted onto substrates, such as the ceramic substrates used in encapsulated laser packages, using flux-less auto-bonding techniques.

Abstract: A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe-M-O alloy, an Fe-M-T-O alloy or an NI-Fe-X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

Abstract: A method for the production of a magnetic head, where first a lower magnetic pole is formed on a wafer. Next, a nonmagnetic write gap layer is formed on the lower magnetic pole. A coil is then formed to be sandwiched between nonmagnetic insulating layers on the nonmagnetic write gap layer. Finally, an upper magnetic pole, provided with a pole tip, is formed to contact the write gap layer on the nonmagnetic write gap layer. After formation, a focused ion beam is irradiated in the direction from a thickness of the pole tip to the lateral parts of the pole tip, the nonmagnetic write gap layer lying directly thereunder. The lower magnetic pole thereby trims the lateral parts of the pole tip while consequently decreasing the width of the pole tip. At the same time, depressed parts are formed in the lower magnetic pole in the areas extending outward from directly below the lateral parts of the pole tip.