Ion Beam Etching (e.g., Ion Milling, Etc.) Patents (Class 204/192.34)
  • Patent number: 7927467
    Abstract: According to one embodiment, a method of manufacturing a discrete track recording medium includes forming protruded magnetic patterns on a substrate, and repeating processes of depositing a nonmagnetic material so as to be filled in recesses between the magnetic patterns and etching back the nonmagnetic material two or more times with rotating the substrate in a plane thereof by an angle less than one revolution.
    Type: Grant
    Filed: March 9, 2009
    Date of Patent: April 19, 2011
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiyuki Kamata, Satoshi Shirotori, Kaori Kimura, Masatoshi Sakurai
  • Publication number: 20110048930
    Abstract: A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
    Type: Application
    Filed: August 28, 2009
    Publication date: March 3, 2011
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Katherina E. Babich, Alessandro C. Callegari, John J. Connolly, Eugene J. O'Sullivan
  • Publication number: 20110048931
    Abstract: Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents comprise hydrazine and hydrazine derivatives having an N—N(N being Nitrogen) bonding in their molecules and boiling points between about 70° and 220° C., and NitrosAmine derivatives saturated with two hydrocarbon groups selected from Methyl, Ethyl, Propyl and Butyl. Preferred agents are Hydrazine monohydrate (HMH), HydroxyEthylHydrazine (HEH), NDMA, NMEA, NDEA, NMPA, NEPA, NDPA, NMBA or NEBA, alone or in combination with Nitrogen Tetroxide. The agents are effective for etching copper in high aspect ratio (deep) holes.
    Type: Application
    Filed: March 18, 2010
    Publication date: March 3, 2011
    Inventor: Vladimir V. Makarov
  • Publication number: 20110048929
    Abstract: Etch assisting agents for focused ion beam (FIB) etching of copper for circuit editing of integrated circuits both prevent loss of adjacent dielectric due to sputtering by the ion beam, and render sputtered re-deposited copper on adjacent surfaces non-conductive to avoid electrical short circuits. The agents comprise hydrazine and hydrazine derivatives compounds having an N—N (N being Nitrogen) bonding in their molecules, and boiling points between about 70° and 200° C. Preferred agents are either Hydrazine monohydrate or Nitrosodimethylamine, alone or in combination with Nitrogen Tetroxide, and are effective for etching copper in high aspect ratio (deep) holes.
    Type: Application
    Filed: August 25, 2009
    Publication date: March 3, 2011
    Inventor: Vladimir V. Makarov
  • Publication number: 20110030772
    Abstract: Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).
    Type: Application
    Filed: August 7, 2009
    Publication date: February 10, 2011
    Applicant: Guardian Industries Corp.
    Inventor: Vijayen S. Veerasamy
  • Publication number: 20110031111
    Abstract: Positioning accuracy of a component in a substrate processing apparatus can be improved higher than a conventional case without increasing the insertion accuracy of positioning pins into positioning holes. Provided is a substrate processing apparatus including a mounting table 110 including a susceptor 114 having a substrate mounting surface 115 on which a wafer W is mounted and a focus ring mounting surface 116 on which a focus ring 124 is mounted; a plurality of positioning pins 200 made of a material expandable in a diametric direction by heating. Each positioning pin is inserted into a positioning hole (first reference hole) formed in the focus ring mounting surface of the susceptor and into a positioning hole (second reference hole) formed in the focus ring, and expanded in the diametric direction by heating and fitted into the positioning holes, thus allowing a position of the focus ring to be aligned.
    Type: Application
    Filed: August 5, 2010
    Publication date: February 10, 2011
    Applicant: TOKYO ELECTRON LIMITED
    Inventor: Yoshiyuki KOBAYASHI
  • Patent number: 7883607
    Abstract: A method according to one embodiment includes ion milling at a first angle of greater than about 25 degrees from normal relative to a media facing side of a thin film region of a magnetic head or component thereof for recessing the thin film region at about a constant rate for films of interest of the thin film region, planes of deposition of the films being oriented about perpendicular to the media facing side; and ion milling or plasma sputtering at a second angle of less than about 25 degrees from normal relative to the media facing side of the thin film region for recessing magnetic films therein faster than insulating films therein, the second angle being smaller than the first angle.
    Type: Grant
    Filed: August 19, 2008
    Date of Patent: February 8, 2011
    Assignee: International Business Machines Corporation
    Inventors: Robert Glenn Biskeborn, Cherngye Hwang, Calvin Shyhjong Lo, Andrew C. Ting
  • Patent number: 7879201
    Abstract: Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: February 1, 2011
    Assignee: Veeco Instruments Inc.
    Inventors: Boris Druz, Viktor Kanarov, Hariharakeshave S. Hegde, Alan V. Hayes, Emmanuel Lakios
  • Patent number: 7875156
    Abstract: A probe storage container can supply a probe in a prober apparatus without being exposed to an atmospheric air. Preferably, the probe is stored in the probe storage container by removing an oxide film in a leading end portion of the probe in accordance with a dry treatment using an ion source, for example, without being exposed to the atmospheric air. It is thus possible to replace and attach the probe with respect to the prober apparatus without being exposed to the atmospheric air, avoiding formation of an oxide film on a surface of the probe. Further, a worker attaching the probe to the prober apparatus can work without being directly in contact with the probe, and it is possible to prevent the leading end portion of the probe from being broken. Accordingly, it is possible to stably measure an electric characteristic of a semiconductor device or the like on the wafer.
    Type: Grant
    Filed: February 7, 2008
    Date of Patent: January 25, 2011
    Assignee: Hitachi High-Technologies Corporation
    Inventors: Masanori Gunji, Katsunori Nakajima, Yasuhiko Nara, Tsutomu Saito, Shigeru Izawa
  • Patent number: 7867406
    Abstract: Patterned magnetic recording media and associated methods of fabrication are described. The patterned magnetic recording media includes a perpendicular magnetic recording layer that is patterned into a plurality of discrete magnetic islands. The patterned magnetic recording media also includes an exchange bridge structure formed from magnetic material that connects the islands of the perpendicular magnetic recording layer. Connecting the islands with magnetic material increases exchange coupling between the islands, which makes the islands more magnetically stable.
    Type: Grant
    Filed: December 26, 2007
    Date of Patent: January 11, 2011
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Thomas R. Albrecht, Manfred E. Schabes
  • Publication number: 20100326819
    Abstract: A method for making a patterned-media magnetic recording disk uses nano-imprint lithography (NIL) for patterning a resist layer over the magnetic recording layer. A hard mask layer is located above the magnetic recording layer and an etch stop layer is located above the hard mask layer and below the resist layer. Residual resist material in the recesses of the patterned resist layer is removed by reactive ion etching (RIE) to expose the underlying etch stop layer. The etch stop material in the recesses is then removed by RIE to expose regions of the hard mask layer. A reactive ion milling (RIM) process removes the exposed hard mask material. The RIM process causes no undercutting of the unexposed hard mask material, which allows the very small critical dimensions of the patterned-media disk to be reliably achieved when ion milling is subsequently performed through the hard mask that has been patterned by the RIM process.
    Type: Application
    Filed: June 24, 2009
    Publication date: December 30, 2010
    Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.
    Inventors: Jeffrey S. Lille, Neil Leslie Robertson
  • Publication number: 20100330707
    Abstract: A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure.
    Type: Application
    Filed: January 26, 2007
    Publication date: December 30, 2010
    Inventors: Xin Jiang, Stuart Stephen Papworth Parkin, Jonathan Sun
  • Publication number: 20100309572
    Abstract: A microelectromechanical (MEMS) device includes a substrate, an actuation electrode over the substrate, a reflective layer over the actuation electrode, and a support layer between the actuation electrode and the reflective layer. The reflective layer includes at least one aperture through the reflective layer. The support layer includes a recess between the actuation electrode and the at least one aperture. Upon application of a control signal to the device, at least a first portion of the reflective layer is configured to move into the recess and at least a second portion of the reflective layer is configured to remain stationary. The reflectivity of the MEMS device is dominantly modulated by changing a phase difference between light reflected from the first portion and light reflected from the second portion.
    Type: Application
    Filed: July 29, 2010
    Publication date: December 9, 2010
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventor: Marc Maurice Mignard
  • Patent number: 7846305
    Abstract: A method for increasing etch depth uniformity in ion milling process in a wafer manufacturing process encompasses loading designated regions of a production pallet with carriers containing wafers to be ion milled. These designated regions have been predetermined to exhibit similar and preferred depths of etching. Non-designated regions of the production pallet are then loaded with dummy carriers and the wafers are ion milled.
    Type: Grant
    Filed: March 1, 2005
    Date of Patent: December 7, 2010
    Assignee: Hitachi Global Storage Technologies, Netherlands, B.V.
    Inventors: Pei Cheh Chen, Omar Eduardo Montero Camacho, Laurence Scott Samuelson, Yongjian Sun
  • Publication number: 20100300874
    Abstract: A patterned magnetic layer is formed by bombardment of a masked high Mrt magnetic layer with a combination of both heavy ion species and light ion species. The method can be implemented as sequential process steps or in a single process step with the proper heavy/light ion species mixture. Advantageously, the combined heavy/light ion species bombardment method results in a patterned magnetic layer having high topographical uniformity across its surface.
    Type: Application
    Filed: May 28, 2009
    Publication date: December 2, 2010
    Inventors: David Shiao-Min Kuo, Dieter Weller, Jan-Ulrich Thiele, Justin Hwu, Paritosh Rajora
  • Publication number: 20100300873
    Abstract: An improved method and apparatus for S/TEM sample preparation and analysis. Preferred embodiments of the present invention provide improved methods for TEM sample creation, especially for small geometry (<100 nm thick) TEM lamellae. A novel sample structure and a novel use of a milling pattern allow the creation of S/TEM samples as thin as 50 nm without significant bowing or warping. Preferred embodiments of the present invention provide methods to partially or fully automate TEM sample creation, to make the process of creating and analyzing TEM samples less labor intensive, and to increase throughput and reproducibility of TEM analysis.
    Type: Application
    Filed: October 22, 2007
    Publication date: December 2, 2010
    Applicant: FEI COMPANY
    Inventors: Jeff Blackwood, Stacey Stone
  • Patent number: 7833388
    Abstract: A method for manufacturing a magnetic layer with a magnetic anisotropy. The method includes an endpoint detection process for determining an end point to carefully control the final thickness of the magnetic layer. The method includes depositing a magnetic layer and then depositing a sacrificial layer over the magnetic layer. A low power angled ion milling is then performed until the magnetic layer has been reached. The angled ion milling can be performed at an angle relative to normal and without rotation in order to form an anisotropic surface texture that induces a magnetic anisotropy in the magnetic layer. An indicator layer may be included between the magnetic layer and the sacrificial layer in order to further improve endpoint detection.
    Type: Grant
    Filed: December 22, 2006
    Date of Patent: November 16, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Matthew Joseph Carey, Jeffrey Robinson Childress, Stefan Maat
  • Publication number: 20100272917
    Abstract: A method and apparatus, the method including: forming a recess in a graphene layer wherein the recess creates a boundary between a first portion of the graphene layer and a second portion of the graphene layer; depositing electrically insulating material within the recess; and depositing an electrically conductive material over the insulating material.
    Type: Application
    Filed: April 28, 2009
    Publication date: October 28, 2010
    Inventors: Samiul Haque, Reijo K. Lehtiniemi, Asta M. Karkkainen, Lorenz Lechner, Pertti Hakonen
  • Patent number: 7818875
    Abstract: A method of manufacturing a magnetic write head that provides improved pole critical dimension control, such as improved track width control (improved sigma) and improved flare point control. The method involves a combination of several process improvements, such as photolithographically patterning a P2 pole tip defining photoresist frame using a zero print bias and also using a small flash field. The method also involves the use of a non-reactive ion etch to notch the first pole (P1) using the second pole (P2) as a mask.
    Type: Grant
    Filed: December 7, 2005
    Date of Patent: October 26, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Hamid Balamame, Daniel Wayne Bedell, Mary Kathryn Gutberlet, Clarence Kai-Sheng Hsieh, Aron Pentek, Yi Zheng
  • Publication number: 20100264019
    Abstract: According to one embodiment, a method for manufacturing a magnetic recording medium includes forming patterns having protrusions and recesses of a ferromagnetic material onto a recording track section and a servo section on a substrate, forming a flattening film, a top surface of which is higher than that of the protrusion of the ferromagnetic material, onto the ferromagnetic material, and performing ion beam etching onto the flattening film up to a top surface of the protrusion of the ferromagnetic material, and determining an end point of flattening etching on the basis of a change in the total number of incident particles by means of an ion counter installed so as to be at an angle ? with respect to a perpendicular direction to the substrate in accordance with a material of the flattening film.
    Type: Application
    Filed: July 2, 2010
    Publication date: October 21, 2010
    Applicants: KABUSHIKI KAISHA TOSHIBA, SHOWA DENKO K.K.
    Inventors: Yoshiyuki Kamata, Katsuyuki Naito, Akira Kikitsu, Masatoshi Sakurai, Masahiro Oka
  • Patent number: 7810227
    Abstract: Using a beam of xenon ions together with a suitable mask, a GMR stack is ion milled until a part of it, no more than about 0.1 microns thick, has been removed so that a pedestal, having sidewalls comprising a vertical section that includes all of the free layer, has been formed. This is followed by formation of the dielectric and conductive lead layers in the usual way. Using xenon as the sputtering gas enables the point at which milling is terminated to be more precisely controlled.
    Type: Grant
    Filed: October 18, 2007
    Date of Patent: October 12, 2010
    Assignees: Headway Technologies, Inc., TDK Corporation
    Inventors: Stuart Kao, Chunping Luo, Chaopeng Chen, Takahiko Machita, Daisuke Miyauchi, Jeiwei Chang
  • Patent number: 7803280
    Abstract: The invention provides a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate to have a surface excellent in flatness. The method for finishing a pre-polished glass substrate uses ion beam etching, gas cluster ion beam etching or plasma etching, the method including: a step of measuring flatness of the glass substrate surface using a shape measurement unit, and a step of measuring a concentration distribution of the dopant contained in the glass substrate. Processing conditions of the glass substrate surface are set up for each site of the glass substrate based on the results obtained from the step of measuring flatness and the step of measuring a concentration distribution of the dopant. Finishing includes keeping an angle formed by a normal line of the glass substrate and an incident beam onto the glass substrate at from 30° to 89°.
    Type: Grant
    Filed: June 1, 2009
    Date of Patent: September 28, 2010
    Assignee: Asahi Glass Company, Limited
    Inventors: Koji Otsuka, Kenji Okamura
  • Publication number: 20100240827
    Abstract: A method for producing polymer coatings by surface initiated polymerization from a plasma deposited coating is provided. The modification of surfaces by polymer attachment is a versatile and efficient means of controlling interfacial properties, such as surface energy (i.e. wetting behavior), permeability, bio-activity, and chemical reactivity. The present invention provides a method whereby a plasma deposited coating is applied to a substrate and the polymer coating formed by surface initiated polymerization is formed on the coating rather than the substrate itself. This means that the growth of the polymer using the grafting from procedure can be performed efficiently and independently of the substrate from.
    Type: Application
    Filed: March 15, 2006
    Publication date: September 23, 2010
    Inventors: David Barwick, Declan Oliver Hastings Teare, Jas Pal Singh Badyal
  • Publication number: 20100220557
    Abstract: The invention relates to a timepiece movement that includes at least one bridge (1) mounted on a bottom plate using at least one securing device (2, 4, 6) to carry at least one member of said movement. According to the invention, said at least one bridge or the bottom plate is made from a plate of micromachinable material and includes at least one bearing formed in a single-piece to carry at least one member of said movement.
    Type: Application
    Filed: March 1, 2010
    Publication date: September 2, 2010
    Applicant: Montres Breguet S.A.
    Inventors: Nakis KARAPATIS, Fabien Henriet, Lucien Germond
  • Patent number: 7785513
    Abstract: A method of manufacturing a molded product includes forming a coat film for covering and concealing particles with the surface of a board while filling the gaps among the particles, and separating the coat film for holding the particles on the reverse side from the board. The coat film and the particles are etched from the reverse side of the separated coat film, the particles are removed from the coat film, and an array of dents carved by the particles is formed on the reverse side of the coat film. A film is formed on the reverse side of the coat film, and a molded product having an array of protrusions on the surface is formed from the film.
    Type: Grant
    Filed: February 18, 2009
    Date of Patent: August 31, 2010
    Assignee: Fujitsu Limited
    Inventors: Hiroaki Tamura, Mitsuo Takeuchi, Hideyuki Kikuchi
  • Patent number: 7771603
    Abstract: A process for polishing a glass substrate, which enables to polish a glass substrate having a large waviness formed by mechanical polishing, to have a surface excellent in flatness, is provided. A process for polishing a glass substrate, comprising a step of measuring the surface profile of a mechanically polished glass substrate to identify the width of waviness present in the glass substrate, and a step of applying dry etching using a beam having a beam size in FWHM (full width of half maximum) value of at most the above size of waviness, to polish the surface of the glass substrate.
    Type: Grant
    Filed: July 18, 2007
    Date of Patent: August 10, 2010
    Assignee: Asahi Glass Company, Limited
    Inventors: Koji Otsuka, Masabumi Ito, Hiroshi Kojima
  • Patent number: 7770284
    Abstract: A manufacturing method of an MR element in which current flows in a direction perpendicular to layer planes, includes forming on a lower electrode layer an MR multi-layered film having a cap layer at a top thereof, forming a mask on the cap layer of the MR multi-layered film, patterning the MR multi-layered film by milling through the mask to form an MR multi-layered structure, forming a magnetic domain control bias layer by using a lift off method using the mask, after forming the magnetic domain control bias layer, forming an additional cap layer on the cap layer and a part of the magnetic domain control bias layer, planarizing a top surface of the additional cap layer and the magnetic domain control bias layer, and forming an upper electrode layer on the planarized top surface.
    Type: Grant
    Filed: May 30, 2007
    Date of Patent: August 10, 2010
    Assignee: TDK Corporation
    Inventors: Naoki Ohta, Takeo Kagami
  • Publication number: 20100184245
    Abstract: The method is designed for manufacturing a bolometric detector equipped with a membrane suspended above a substrate by means of heat-insulating arms fixed to the substrate by anchoring points. The membrane has a heat-sensitive thin layer with a base comprising at least a semiconducting iron oxide. The method comprises at least a step of localized reduction and/or oxidation of the thin layer of semiconducting iron oxide to modify the degree of oxidation of the iron atom of a part of the thin layer of semiconducting iron oxide.
    Type: Application
    Filed: January 12, 2010
    Publication date: July 22, 2010
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Jean-Louis OUVRIER-BUFFET, Christophe DUBARRY, Laurent PUECH
  • Publication number: 20100165276
    Abstract: A composite having (a) a substrate that has opposing first and second surfaces, the substrate being at least 90% transmissive in visible light and has less than 5% haze, (b) a nanostructured article including a matrix and a nanoscale dispersed phase and having a random nanostructured anisotropic surface; and (c) an optically clear adhesive disposed on the second surface of the substrate.
    Type: Application
    Filed: December 18, 2009
    Publication date: July 1, 2010
    Inventors: Moses M. David, Andrew K. Hartzell, Timothy J. Hebrink, Ta-Hua Yu, Jun-Ying Zhang, Kalc C. Vang, Ming Cheng
  • Publication number: 20100155232
    Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic data recording, having a write pole with a tapered trailing edge for improved write field at small bit lengths. The trailing edge taper is formed by a deposition process that can be performed after the write pole flare point has already been formed, and especially after a wrap around shield side gap has been formed. This advantageously allows the distance between the write pole flare point and the trailing edge taper to be closely controlled.
    Type: Application
    Filed: December 23, 2008
    Publication date: June 24, 2010
    Inventors: Aron Pentek, Sue Siyang Zhang, Yi Zheng
  • Publication number: 20100155231
    Abstract: Disclosed are method and apparatus for manufacturing a magnetoresistive device which are suitable for manufacturing a high-quality magnetoresistive device by reducing damages caused during the processing of a multilayer magnetic film as a component of the magnetoresistive device, thereby preventing deterioration of magnetic characteristics due to such damages. Specifically disclosed is a method for manufacturing a magnetoresistive device, which includes processing a multilayer magnetic film by performing a reactive ion etching on a substrate which is provided with the multilayer magnetic film as a component of the magnetoresistive device. This method for manufacturing a magnetoresistive device includes irradiating the multilayer magnetic film with an ion beam after the reactive ion etching.
    Type: Application
    Filed: September 13, 2006
    Publication date: June 24, 2010
    Applicant: Canon ANELVA Corporation
    Inventors: Naoki Watanabe, Yoshimitsu Kodaira, David D. Djayaprawira, Hiroki Maehara
  • Publication number: 20100149680
    Abstract: The present invention provides a method of manufacturing a magnetic recording medium where at least a magnetic layer is formed on a non-magnetic substrate and a magnetically separated magnetic recording pattern is formed on the magnetic layer, including: a magnetic recording pattern forming process of forming magnetic recording areas that are constructed with convex portions and boundary areas that are constructed with concave portions between the magnetic recording area as the magnetic recording pattern on the magnetic layer; followed by a protective layer forming process of forming a protective carbon layer by using a high-frequency plasma chemical vapor deposition method and by applying a negative bias to the non-magnetic substrate to make the protective carbon layer on the magnetic recording area thinner than the protective carbon layer on the boundary area.
    Type: Application
    Filed: December 9, 2009
    Publication date: June 17, 2010
    Applicant: SHOWA DENKO K.K.
    Inventors: Shinichi ISHIBASHI, Masato FUKUSHIMA, Akira SAKAWAKI
  • Publication number: 20100122901
    Abstract: A system includes a collimated beam source within a vacuum chamber, a condensable barrier gas, cooling material, a pump, and isolation chambers cooled by the cooling material to condense the barrier gas. Pressure levels of each isolation chamber are substantially greater than in the vacuum chamber. Coaxially-aligned orifices connect a working chamber, the isolation chambers, and the vacuum chamber. The pump evacuates uncondensed barrier gas. The barrier gas blocks entry of atmospheric vapor from the working chamber into the isolation chambers, and undergoes supersonic flow expansion upon entering each isolation chamber. A method includes connecting the isolation chambers to the vacuum chamber, directing vapor to a boundary with the working chamber, and supersonically expanding the vapor as it enters the isolation chambers via the orifices. The vapor condenses in each isolation chamber using the cooling material, and uncondensed vapor is pumped out of the isolation chambers via the pump.
    Type: Application
    Filed: May 22, 2009
    Publication date: May 20, 2010
    Applicant: USA as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Leonard M. Weinstein, Karen M. Taminger
  • Patent number: 7716813
    Abstract: A method is disclosed for independently controlling track width and bevel angle of a write pole tip of a magnetic recording head. The method includes establishing the track width in the pole tip layer material utilizing E-beam lithography. A portion of this pole tip material having the established track width is protected by providing a temporary masking material to make a protected portion. At least one unprotected portion is left exposed to be shaped. This unprotected portion is then beveled to produce at least one beveled portion. The protected portion produces an upper pole tip portion which together with the beveled portion produce an improved pole tip. Also disclosed is a magnetic head having the improved pole tip, and a disk drive having a magnetic head having the improved pole tip.
    Type: Grant
    Filed: December 5, 2006
    Date of Patent: May 18, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Kim Y. Lee, Jyh-Shuey Lo
  • Publication number: 20100107761
    Abstract: A vibratory gyroscopic device to determine the rotation rate of an object and method of manufacturing thereof, the device including a plurality of supporting springs arranged in pairs to exhibit bilateral symmetry via each pair (i.e., mirror-image symmetry) relative to each other such that the asymmetries in the characteristics of the ring (e.g., resonant frequency, response to angular velocity), caused by asymmetries in the structure of the ring, are reduced.
    Type: Application
    Filed: February 13, 2008
    Publication date: May 6, 2010
    Applicant: ELBIT SYSTEMS ELECTRO-OPTICS ELOP LTD.
    Inventors: Atzmon Ofri, Daniel Wormser, Mordekhai Velger, Yizhar Weiss, Boris Berg
  • Publication number: 20100101940
    Abstract: An object of the invention is to provide a method for removing foreign matter from a glass substrate surface to be finish-processed by a method accompanied with beam irradiation or laser light irradiation on the glass substrate surface. The present invention relates to a method for removing foreign matter from a glass substrate surface, which includes subjecting the glass substrate surface to gas cluster ion beam etching at an accelerating voltage of from 5 to 15 keV.
    Type: Application
    Filed: December 29, 2009
    Publication date: April 29, 2010
    Applicant: ASAHI GLASS COMPANY, LIMITED
    Inventors: Masabumi Ito, Kenji Okamura, Hiroshi Kojima
  • Publication number: 20100096256
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Application
    Filed: October 22, 2008
    Publication date: April 22, 2010
    Inventors: OMKARAM NALAMASU, Steven Verhaverbeke, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
  • Publication number: 20100092802
    Abstract: A method of forming a granular magnetic recording medium comprises etching a cap layer disposed on a granular magnetic recording layer. The etching process is carried out at a varying ion energy, including a first ion energy and a lower subsequent second energy. A device including the etched cap layer is also disclosed.
    Type: Application
    Filed: October 15, 2008
    Publication date: April 15, 2010
    Applicant: Seagate Technology LLC
    Inventors: Xiaoding Ma, Jing Gui, Michael Joseph Stirniman, Thomas Nolan
  • Publication number: 20100084262
    Abstract: The present invention relates to a method for manufacturing a perpendicular recording magnetic head. The method for manufacturing a perpendicular recording magnetic head according to the present invention includes first to third steps. At the first step, a main magnetic pole layer is formed on a foundation layer. At the second step, a main magnetic pole forming mask whose recording-medium-facing surface is of an inverted trapezoidal shape is formed on the main magnetic pole layer. At the third step, a main magnetic pole whose recording-medium-facing surface is of an inverted trapezoidal shape is formed by performing ion milling on a laminated structure including the foundation layer and the main magnetic pole layer from a direction which makes a given angle with a lamination direction according to a bevel angle of the inverted trapezoidal shape.
    Type: Application
    Filed: October 2, 2008
    Publication date: April 8, 2010
    Applicant: TDK CORPORATION
    Inventors: Hiromichi Umehara, Shin Narushima, Michitaka Nishiyama, Noriaki Kasahara, Koichi Otani
  • Publication number: 20100078316
    Abstract: The present invention relates to a method for forming a dry etching mask. A plurality of aluminum oxide films are sequentially sputtered on a material to be dry etched in such a manner that etching rate with respect to reactive ion etching increases toward a lower layer. On a laminated film of the plurality of aluminum oxide films, there is formed a first mask that has etching resistance with respect to the reactive ion etching. Reactive ion etching is performed from above the first mask to form a second mask of the laminated film.
    Type: Application
    Filed: September 30, 2008
    Publication date: April 1, 2010
    Applicant: TDK CORPORATION
    Inventors: Kento EDAKAWA, Hiromichi Umehara, Noriaki Kasahara, Michitaka Nishiyama
  • Patent number: 7676904
    Abstract: A method of manufacturing a GMR, TMR or CPP GMR sensor having a smooth interface between magnetic and non-magnetic layers to improve sensor performance by exposing a layer to a low energy ion beam prior to depositing a subsequent layer.
    Type: Grant
    Filed: July 30, 2004
    Date of Patent: March 16, 2010
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Phong V. Chau, James Mac Freitag, Mustafa Michael Pinarbasi, Hua Ai Zeng
  • Publication number: 20100060109
    Abstract: Disclosed herein is a device comprising a pair of electrodes; and a nanotube, a nanorod and/or a nanowire; the nanotube, nanorod and/or nanowire comprising a piezoelectric and/or pyroelectric polymeric composition; the pair of electrodes being in electrical communication with opposing surfaces of the nanotube, nanorod and/or a nanowire; the pair of electrodes being perpendicular to a longitudinal axis of the nanotube, nanorod and/or a nanowire.
    Type: Application
    Filed: August 31, 2009
    Publication date: March 11, 2010
    Applicant: UNIVERSITY OF MASSACHUSETTS
    Inventors: Thomas P. Russell, Jodie Lutkenhaus
  • Publication number: 20100047628
    Abstract: A method according to one embodiment includes ion milling at a first angle of greater than about 25 degrees from normal relative to a media facing side of a thin film region of a magnetic head or component thereof for recessing the thin film region at about a constant rate for films of interest of the thin film region, planes of deposition of the films being oriented about perpendicular to the media facing side; and ion milling or plasma sputtering at a second angle of less than about 25 degrees from normal relative to the media facing side of the thin film region for recessing magnetic films therein faster than insulating films therein, the second angle being smaller than the first angle.
    Type: Application
    Filed: August 19, 2008
    Publication date: February 25, 2010
    Inventors: Robert Glenn Biskeborn, Cherngye Hwang, Calvin Shyhjong Lo, Andrew C. Ting
  • Publication number: 20100044212
    Abstract: A vertically standing IPMC includes a substrate, a first electrode positioned substantially vertical with respect to an upper surface of the substrate, a second electrode positioned substantially vertical with respect to the upper surface of the substrate and disposed opposite to the first electrode, and an ionic polymer film interposed between the first electrode and the second electrode and standing substantially vertical with respect to the upper surface of the substrate.
    Type: Application
    Filed: August 21, 2008
    Publication date: February 25, 2010
    Applicant: SNU R&DB Foundation
    Inventors: Yong Hyup Kim, Seong Jun Kim
  • Patent number: 7662263
    Abstract: A process is provided for producing near-perfect optical surfaces, for EUV and soft-x-ray optics. The method involves polishing or otherwise figuring the multilayer coating that has been deposited on an optical substrate, in order to correct for errors in the figure of the substrate and coating. A method such as ion-beam milling is used to remove material from the multilayer coating by an amount that varies in a specified way across the substrate. The phase of the EUV light that is reflected from the multilayer will be affected by the amount of multilayer material removed, but this effect will be reduced by a factor of 1?n as compared with height variations of the substrate, where n is the average refractive index of the multilayer.
    Type: Grant
    Filed: September 27, 2002
    Date of Patent: February 16, 2010
    Assignee: EUV LLC.
    Inventors: Henry N. Chapman, John S. Taylor
  • Patent number: 7662264
    Abstract: A method for producing a magnetic recording medium, includes: forming an SOG film on a surface of a magnetic layer; forming a concavo-convex structure in the SOG film comprising one selected from a group consisting of silica glass, alkylsiloxane polymer, methyl silsesquioxane polymer, hydrogen silsesquioxane polymer and hydro alkylsiloxane polymer; etching the SOG film to expose the surface of the magnetic layer; etching the exposed surface of the magnetic layer by ion milling; and forming a filling layer on the surface of the magnetic layer while leaving a portion of the magnetic layer having been subjected to the ion milling.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: February 16, 2010
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Shirotori, Yoshiyuki Kamata, Masatoshi Sakurai
  • Publication number: 20100033055
    Abstract: A method for manufacturing an elastic wave device includes: forming comb-shaped electrodes for exciting elastic waves on a piezoelectric substrate; forming a dielectric layer having a thickness greater than that of the comb-shaped electrode so as to cover the comb-shaped electrodes, forming an etch back layer so as to cover the dielectric layer, and etching an etch back layer and part of the dielectric layer under the conditions where the etch back layer and the dielectric layer are thinned at the same rate.
    Type: Application
    Filed: August 7, 2009
    Publication date: February 11, 2010
    Applicant: FUJITSU LIMITED
    Inventor: Tadashi NAKATANI
  • Publication number: 20100032581
    Abstract: A method is described for producing a micro-gripper, which comprises a base body and a gripping body connected integrally to the base body, which projects beyond the base body and provides a receptacle slot on a free end area in such a way that a micrometer-scale or sub-micrometer-scale object may be clamped in the receptacle slot for gripping and holding, as well as a micro-gripper according to the species.
    Type: Application
    Filed: March 9, 2007
    Publication date: February 11, 2010
    Inventors: Christian Grosse, Frank Altmann, Michél Simon, Hilmar Hoffmeister, Detlef Riemer
  • Publication number: 20100025685
    Abstract: A method of forming a contact hole in an insulating film coating amorphous Si having an irregular surface formed on an insulating substrate, for connecting the amorphous Si to a conductor film formed on the insulating film includes etching the insulating film using reactive ion etching to a depth whereat the irregularity does not disappear, and sputter-etching by physically colliding Ar radicals produced by Ar gas plasma discharge onto the surface of the amorphous Si.
    Type: Application
    Filed: September 24, 2009
    Publication date: February 4, 2010
    Applicant: NEC CORPORATION
    Inventor: Hitoshi Shiraishi
  • Publication number: 20100001616
    Abstract: MEMS stages comprising a plurality of comb drive actuators provide micro and up to nano-positioning capability. Flexure hinges and folded springs that operably connect the actuator to a movable end stage provide independent motion from each of the actuators that minimizes unwanted off-axis displacement, particularly for three-dimensional movement of a cantilever. Also provided are methods for using and making MEMS stages. In an aspect, a process provides a unitary MEMS stage made from a silicon-on-insulator wafer that avoids any post-fabrication assembly steps. Further provided are various devices that incorporate any of the stages disclosed herein, such as devices requiring accurate positioning systems in applications including scanning probe microscopy, E-jet printing, near-field optic sensing, cell probing and material characterization.
    Type: Application
    Filed: May 7, 2009
    Publication date: January 7, 2010
    Inventors: Placid M. FERREIRA, Jingyan DONG, Deepkishore MUKHOPADHYAY