Abstract: Embodiments of the present disclosure include a system for depositing a layered nanolaminate alloy including a controller for an electrodeposition process that includes a waveform synthesizer circuit configured to generate a complex waveform signal corresponding to a desired electrodeposition waveform to be output from an electrodeposition power supply. The controller also includes a synthesizer control circuit configured to control the waveform synthesizer circuit. Based at least in part on a recipe having information related to the electrodeposition process, the synthesizer control circuit controls the generation of the complex waveform signal by modulating in real-time at least one of a waveform shape, a frequency, an amplitude, an offset, a slew, a wavelength, a phase, a velocity, and a derivative of the complex waveform signal. The controller further includes a controller output circuit configured to transmit the complex waveform signal to an input of the electrodeposition power supply.

Abstract: A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

Abstract: A system and method for plating a workpiece are described. In one aspect, an apparatus includes a deposition chamber, a workpiece holder adapted for insertion into and removal from the deposition chamber, a shield with patterns of apertures corresponding to features on the workpiece, a shield holder also adapted for insertion into and removal from the deposition chamber and a positioning mechanism to position the workpiece in the workpiece holder such that the pattern of apertures on the shield will align with the corresponding features on the workpiece when the workpiece holder and shield holder are inserted into the deposition chamber.

Abstract: Provided is a maintenance member or the like capable of easily maintaining an electric contact in a substrate holder. It relates to a maintenance member to maintain a substrate holder including an electric contact configured to supply power to a substrate. The maintenance member includes an abrasive body having a shape corresponding to the substrate that is a holding target of the substrate holder, and disposed to come in contact with the electric contact when held by the substrate holder.

Abstract: A method for manufacturing a semiconductor structure includes: providing a substrate, the substrate having a first surface and a second surface opposite to each other, and a transistor being arranged on the second surface; forming release holes in the substrate, the release holes extending into the transistors, bottoms of the release holes being located in channel regions of the transistors, and top surfaces of the release holes being flush with the first surface; and forming a conductive structure in the release holes.

Abstract: Probe structures, probe arrays, have varying intrinsic material properties along their lengths. Methods of forming probes and probe arrays comprise varying the plating parameters to provide varying intrinsic material properties. Some embodiments provide deposition templates created using multiphoton lithography to provide probes with varying lateral configurations along at least portion of their lengths.

Abstract: An electroplating apparatus includes a plating bath and a substrate in a horizontal direction. The electroplating apparatus further includes a plurality of cathodes on first and second sides of the substrate in a first direction on one surface of the substrate, and an anode above the substrate, the anode being spaced apart from the substrate and configured to be movable in the first direction.

Abstract: A method includes: in a semiconductor wafer including a first semiconductor layer and a second semiconductor layer adjoining the first semiconductor layer, forming a porous region extending from a first surface into the first semiconductor layer; and removing the porous region by an etching process, wherein a doping concentration of the second semiconductor layer is less than 10?2 times a doping concentration of the first semiconductor layer and/or a doping type of the second semiconductor layer is complementary to a doping type of the first semiconductor layer.

Abstract: A transfer substrate for transferring an array of a plurality of micro light emitting diodes (micro LEDs) onto a target substrate. The transfer substrate includes a base substrate and an array of a plurality of electroactive actuators. A respective one of the plurality of electroactive actuators includes a ring-shaped frame structure substantially surrounding a central opening, the ring-shaped frame structure made of an electroactive material. The ring-shaped frame structure is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure. A distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening having a first value in the first state and a second value in the second state. The first value is greater than the second value.

Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Abstract: The masking jig includes a contact member and a support unit. The contact member includes a through-hole allowing for insertion of a rod-like piston rod, and a deformation part around the through-hole configured to get elastically deformed by insertion of a male thread of the piston rod into the through-hole and contact the outer peripheral end face of the piston rod. The support unit supports the contact member such that the contact member moves in a direction intersecting an axial direction of the piston rod.

Abstract: A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings.

Abstract: A system for measuring a cathode current includes a conducting bar and a current measuring device. The conducting bar has a rectangular plate-like structure, and a first end of the conducting bar is vertically cut to form a plurality of long teeth. The plurality of long teeth are equally spaced at the first end of the conducting bar. The number of the plurality of long teeth is equal to the number of cathodes. The upper surface of each of the long teeth may include a raised conductive contact. Each of the conductive contacts is connected with one cathode of an upstream slot. A second end of the conducting bar is connected with a downstream slot, and the second end of the conducting bar is one end opposite to the first end. The current measuring device is disposed on the conducting bar and used for measuring the current of each cathode.

Abstract: The present invention relates to applying at least one ultra/mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

Abstract: A substrate processing apparatus having a detecting unit that can detect an abnormality of a substrate such as a crack of the substrate or chipping of the substrate is disclosed. The substrate processing apparatus includes a polishing unit configured to polish a substrate, a cleaning unit configured to clean the polished substrate, a substrate abnormality detection unit configured to detect an abnormality of the substrate, and a substrate transporting mechanism configured to transport the substrate in the order of the polishing unit, the substrate abnormality detection unit, and the cleaning unit. The substrate abnormality detection unit includes an imaging device configured to image the substrate, and an output monitoring unit configured to determine a status of the substrate by comparing a signal obtained from the imaging device with a predetermined threshold.

Abstract: A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

Abstract: A robot including an elevating/lowering drive mechanism for elevating/lowering a robot arm having an end effector holding a substrate, and a cover unit for covering the elevating/lowering drive mechanism, wherein the elevating/lowering drive mechanism has a fixed portion having a guide rail extending in a vertical direction and an elevating/lowering portion driven to be elevated/lowered along the guide rail, wherein the robot arm has a base portion link connecting to the elevating/lowering portion and a link member connected to the base portion link, and wherein the cover unit has a fixed-side cover provided to the fixed portion and the elevating/lowering portion moves, and a guide rail cover provided to the elevating/lowering portion for covering an upper portion of the guide rail exposed when the elevating/lowering portion is lowered. A substrate conveyance robot capable of miniaturizing a substrate conveyance apparatus without inconvenience such as decline in rigidity of a robot arm.

Abstract: A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings.

Abstract: For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.

Abstract: The present invention improves the hydrophilicity of a substrate surface, and suppresses variation in the degree of hydrophilicity with each substrate. A plating apparatus is provided that performs a plating process on a substrate having a resist pattern. This plating apparatus includes a pretreatment bath that performs hydrophilic treatment by bringing a pretreatment liquid into contact with a surface to be plated of the substrate, and a plating bath that performs a plating process on a substrate that has undergone the hydrophilic treatment. The pretreatment bath includes a pretreatment liquid supplying device that supplies the pretreatment liquid into the pretreatment bath, and an ultraviolet light irradiation device that irradiates ultraviolet light onto the surface to be plated of the substrate.

Abstract: A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings.

Abstract: A system for treating water includes an electrochemical water treatment unit having a first self-supporting framework limiting a first inner space. An electrochemical reactor is arranged in the first inner space vertically below a first opening at a top side of the electrochemical water treatment unit. The system includes a maintenance unit having a second self-supporting framework limiting a second inner space. The maintenance unit includes a second opening in a bottom side. The maintenance unit is arranged above the electrochemical water treatment unit so that the first opening and the second opening are aligned. A hoist is moveably arranged along a rail structure at the top side of the maintenance unit.

Abstract: A substrate processing apparatus comprises a transferring device including a grasping section configured to grasp a substrate holder, and a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented, and processing the substrate. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Abstract: There is disclosed a plating apparatus which can dispose an anode, a substrate and a regulation plate parallel to each other in such a manner that the center of the anode, the center of the substrate and the center of an opening of the regulation plate are aligned in a straight line. A frame of the plating apparatus includes: a support for supporting upper portions of an anode holder, a substrate holder and the regulation plate; a box structure secured to the support; an upper positioning structure for fixing a relative position between the support and the upper portions of the anode holder, the substrate holder and the regulation plate; and a lower positioning structure for fixing a relative position between the box structure and lower portions of the anode holder, the substrate holder and the regulation plate.

Abstract: An object of the present invention is to provide a preservation treatment apparatus which can sufficiently apply an effect generated by charges to an object to be preserved thus more surely exhibiting a preservation effect generated by charges, and can stably hold an effect of a potential applied to the object to be preserved by controlling the flow of an electric current in a stacked portion of the object.

Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.

Abstract: A glass sheet semiconductor deposition system (20) for coating semiconductor material on glass sheets is performed by conveying the glass sheets vertically suspended at upper extremities thereof by a pair of conveyors (38) through a housing (22) including a vacuum chamber (24). The glass sheets are conveyed on shuttles (42) through an entry load station (26) into the housing vacuum chamber (24), through a heating station (30) and at least one semiconductor deposition station (32, 34) in the housing (22), and to a cooling station (36) prior to exiting of the system through an exit load lock station (28). The semiconductor deposition station construction includes a deposition module (102) and a radiant heater (104) between which the vertical glass sheets are conveyed for the semiconductor deposition.

Abstract: To prevent a plate-like work in a plating tank from swinging to improve quality of plating and prevent dropout or damages of a printed circuit board during transportation. A plating tank 2a includes an upper guide rail 11 that is provided above the plating tank 2a and transports a transport hanger 15a in a moving direction and a lower guide rail 14 that is provided inside the plating tank 2a and generates an attractive force against a lower clamp 49 of the transport hanger 15a. In the plating tank 2a, an attractive force is generated while performing plate processing to pull the lower clamp 49 of the transport hanger 15a downward, thereby giving tension to a plate-like work W.

Abstract: The present invention relates to plating equipment and method for a solar cell wafer using electroplating and light-induced plating jointly. The plating equipment includes a jig allowing a wafer (1), that is a body to be plated, to be vertically immersed into a plating solution at a center of a plating bath (209), a first plating unit (200) comprising a plurality of anode members (210) symmetrically disposed on both sides of the plating bath (209) facing the wafer (1), the first plating unit performing electroplating; and a second plating unit (300) disposed in a light source receiving unit (320) physically blocked from the first plating unit (200), the second plating unit (300) being disposed at a rear side of the anode members (210) to perform light-induced plating by using an light emitting diode (LED) lamp (301) irradiating light onto the wafer (1).

Abstract: Provided are a substrate transfer apparatus and method and a substrate processing apparatus. The substrate transfer apparatus includes: a body portion; an arm part coupled to the body portion, the arm part moving to allow the substrate to be transferred; a suction part provided with the arm portion, the suction part suctioning and fixing the substrate; and a control part controlling an operation of the substrate transfer apparatus, wherein the control part changes a suction point on the substrate to re-attempt suction when suction of the substrate by the suction part is unsuccessful.

Abstract: A method for electrodepositing copper nanoparticles includes the steps of a) providing a reaction system having an electrolyte solution, a conductive nitride film used as a working electrode and immersed in the electrolyte solution, a copper metal or a copper alloy used as an auxiliary electrode and immersed in the electrolyte solution, and a reference electrode immersed in the electrolyte solution; and b) applying a pulse voltage to the reaction system to form copper nanoparticles on a surface of the conductive nitride film.

Abstract: Provided is a gang socket with which capacitor elements can be manufactured without contaminating chemical conversion treatment liquids or semiconductor layer forming liquids even when the chemical conversion treatment liquids and semiconductor layer forming liquids are corrosive and with which heat treatment can be carried out without obstacles even when heat treatment is carried out during the manufacture of the capacitor elements. This gang socket (1) is provided with a plurality of conductive socket main units (2) provided with insertion openings (37) and an insulator part (5) forming a plurality of receiving parts (6) that can accommodate at least part of the socket main units (2) and provided with a plurality of small openings (7) connecting to the bottom surface of the receiving parts (6) on a bottom surface (5b). The insulator part (5) is constituted of a material having heat resistance and corrosion resistance.

Abstract: The invention relates to a method for compensating patient movements in MRI scans in real time and to a device suitable for carrying out said method. The method involves the following steps: optically sensing a marking element (5) connected to a patient (3) by means of an image sensor module (7) of an MRI-compatible camera (2) which is positioned inside an MRI device; transferring the image data detected by the image sensor module (7) to a micro-controller module (11) which is integrated in the MRI-compatible camera (2); calculating position data of the marking element (5) in the micro-controller module (11); and transmitting the position data to an external analyzing unit or to the MRI device in real time.

Abstract: A substrate processing apparatus is composed of an indexer block, a first processing block and a second processing block that are provided in parallel with one another. The indexer block is provided with an indexer robot. The first processing block is provided with a plurality of back surface cleaning units and a first main robot. The second processing block is provided with a plurality of end surface cleaning units, a plurality of top surface cleaning units and a second main robot.

Abstract: Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

Abstract: An electrochemical machining apparatus includes a fastening bracket, a first drive member positioned on the fastening bracket, a connecting member, a first electrode connected to the connecting member, a second driving member, a second electrode connected to the second driving member, a moving assembly positioned on the fastening bracket, an electrolytic cell positioned on moving assembly, a pump, and a vacuum pump. The first electrode defines a plurality of liquid collecting grooves spaced from each other. Each liquid collecting grooves defines a plurality of second through holes. At least one liquid collecting groove is connected to the pump, and the other liquid collecting grooves are connected to the vacuum pump. The portion of the second electrode can be inserted into and depart from the second through holes.

Abstract: For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.

Abstract: A plating apparatus for plating a substrate is disclosed. The plating apparatus includes: a dip-type plating bath; a dry-type plating bath having a hole in a sidewall thereof; and a pressing mechanism configured to press a substrate holder, holding a substrate, against the sidewall of the dry-type plating bath to close the hole. The substrate holder includes a base member and a holding member configured to sandwich the substrate therebetween, a first seal portion configured to seal a gap between the substrate and the holding member, a second seal portion configured to seal a gap between the base member and the holding member, and a third seal portion configured to seal a gap between the holding member and the sidewall of the dry-type plating bath.

Abstract: An apparatus for anodizing substrates immersed in an electrolyte solution. A substrate holder mounted in a storage tank includes a first support unit having first support elements for supporting, in a liquid-tight condition, only lower circumferential portions of the substrates, and a second support unit attachable to and detachable from the first support unit and having second support elements for supporting, in a liquid-tight condition, remaining circumferential portions of the substrates. A drive mechanism separates the first support unit and the second support unit when loading and unloading the substrates, and for connecting the first support unit and the second support unit after the substrates are placed in the substrate holder.

Abstract: A semiconductor wafer holder includes first and second holding members between which a semiconductor wafer is held. The second holding member includes a second conductive element placed in contact with a first conductive element of the first holding member and the semiconductor wafer. A ring clamp is used to press the second holding member against the first holding member for holding of the semiconductor wafer.

Abstract: A machine for the electrochemical marking treatment of metallic surfaces, includes an electrode placed in sliding movement on the metallic surface to be treated, a buffer impregnated with etching solution for the specific metal in treatment, and an electric current circuit, suitable for electro-marking treatment of said metal, with a conductor connected to the electrode and the other conductor connected to the metallic surface in treatment; and presents to treat large metallic surfaces on plates, metal canvas or on metallic sheet in coil.

Abstract: It is an object of this disclosure to provide high productivity, low cost-of-ownership manufacturing equipment for the high volume production of photovoltaic (PV) solar cell device architecture. It is a further object of this disclosure to reduce material processing steps and material cost compared to existing technologies by using gas-phase source silicon. The present disclosure teaches the fabrication of a sacrificial substrate base layer that is compatible with a gas-phase substrate growth process. Porous silicon is used as the sacrificial layer in the present disclosure. Further, the present disclosure provides equipment to produce a sacrificial porous silicon PV cell-substrate base layer.

Abstract: A production line includes a number of production units, production equipments and a sliding bracket. The sliding bracket slides between the production units. Each production unit includes at least one base unit which is made in series. The at least one base unit has an enclosure. The sliding bracket and the production equipment are received in the enclosure. The production units are arranged in a configuration such as straight line, U-shaped or rectangular.

Abstract: A copper electroplating apparatus is disclosed. The copper electroplating apparatus includes: a plating bath configured to hold a plating solution therein; a soluble anode of phosphorus-containing copper; a substrate holder configured to hold a substrate; an anode bag that surrounds the anode, the anode bag being formed of mesh; a regulation plate configured to regulate an electric field, the regulation plate having an opening and being disposed between the anode and the substrate held by the substrate holder; and a diaphragm disposed so as to dose the opening of the regulation plate, the diaphragm being configured to allow permeation of metal ions therethrough and not allow permeation of additives contained in the plating solution.

Abstract: A support mechanism used in an electro plasma polishing process includes a support beam, a first electrically conducting assembly, and a second electrically conducting assembly. The first electrically conducting assembly and the second electrically conducting assembly are mounted on the support beam. The first electrically conducting assembly is electrically insulated from the second electrically conducting assembly.

Abstract: The invention relates to an equipment for the surface treatment of parts (4), that comprises a plurality of treatment vats arranged in series and comprising rotating drums (2) provided with means for temporarily attaching the parts to be processed and having their axes (XX?) rotatingly mounted horizontally so that the major portion of each drum (2) is submerged in the processing liquid contained in the corresponding vat, and a conveyor line (14) for supplying each drum (2) with parts to be processed and for removing from said drum the parts already processed, characterized in that the conveying process is carried out along a general axis (ZZ?), and in that the axes (XX?) of the drums are parallel relative to each other and parallel to the general axis (ZZ?) of the conveyor line.

Abstract: A stand-alone processing station of a semiconductor manufacturing system may be configured to fabricate interconnects on a semiconductor wafer. The stand-alone processing station may include a chemical mechanical polishing (CMP) module and an electro-chemical deposition (ECD) module. The CMP module may be configured to receive a semiconductor wafer from another processing station and selectively remove a first top layer from the received semiconductor wafer. The ECD module may be configured to receive a semiconductor wafer from the CMP module and fill interconnect features with metal. The CMP module may also be configured to receive a semiconductor wafer from the ECD module and selectively remove excess metal and a second top layer from the semiconductor wafer. Methods of forming an interconnect on a semiconductor wafer are also provided, as are other aspects.

Abstract: A plating apparatus includes a processing bath configured to store a processing liquid therein, a transporter configured to immerse a substrate holder, holding a substrate, in the processing liquid, raise the substrate holder out of the processing bath, and transport the substrate holder in a horizontal direction, and a gas flow generator configured to generate a clean gas flow forward of the substrate with respect to a direction in which the substrate holder is transported. The transporter moves the gas flow generator together with the substrate holder in the horizontal direction while transporting the substrate holder in the horizontal direction.

Abstract: An apparatus (1) for continuous electrolytic surface finishing of bars (2) is described, comprising at least one cathode (3), one electrolytic cell (4) containing an electrolyte (5) and comprising an inlet (6) and an outlet (7) for the bars (2), and at least one longitudinal anode (8) along the route of the bars (2) inside the electrolytic cell (4), and means (9) for feeding the bars (2) along the axis of the bars (2) for introducing the bars (2) into the cell (4). Said at least one cathode (3) consists of a plurality of sliding contacts (11), each of which is provided with a selectively and independently actuatable energetic source (30) thereof.

Abstract: A web pressure welding method for pressure welding, with respect to a running web, a first belt-shaped annular body which contact surface rotates with running of at least one web, where an area pressure for pressure welding to the web side is applied on the contact surface of the first belt-shaped annular body.