Abstract: A method of producing a multilayer structure that has reduced interfacial roughness and interlayer mixing by using a physical-vapor deposition apparatus. In general the method includes forming a bottom layer having a first material wherein a first plurality of monolayers of the first material is deposited on an underlayer using a low incident adatom energy. Next, a second plurality of monolayers of the first material is deposited on top of the first plurality of monolayers of the first material using a high incident adatom energy. Thereafter, the method further includes forming a second layer having a second material wherein a first plurality of monolayers of the second material is deposited on the second plurality of monolayers of the first material using a low incident adatom energy. Next, a second plurality of monolayers of the second material is deposited on the first plurality of monolayers of the second material using a high incident adatom energy.

Abstract: Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma.

Abstract: A system and related method are disclosed for performing an inductively-coupled-plasma ionized physical-vapor deposition (“PVD”) process for depositing material layers onto a substrate. Within a PVD process chamber are contained a target/cathode assembly, a chuck assembly, a process medium, a variable height inductively-coupled (“VHIC”) ionization coil segment and an antenna actuator for controlling the relative vertical position of the variable height inductively-coupled ionization coil segment. The VHIC coil segment can be contained within a dielectric liner and can be covered by a multi-slotted grounded electrostatic shield. The VHIC ionization coil segment can comprise one or more zones comprised of one or more coil loops powered by one or more radio-frequency power supplies. Each zone can be powered through an adjustable passive electrical component for providing multiple inductive zone operations during a deposition process.

Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

Abstract: A burn-in process is performed in a high density plasma sputtering chamber to remove contaminants from a coil and a sputtering target installed in the chamber. The process includes applying respective power signals to the coil and to the sputtering target while maintaining a pressure level in the chamber that is lower than the conventional pressure level of 40 mT. Preferably the pressure level is maintained at substantially 10 mT.

Abstract: A method and apparatus that operates at a high pressure of at least one torr for improving sidewall coverage within trenches and vias in a substrate. The apparatus comprises a chamber enclosing a target and a pedestal, a process gas that provides a process gas in the chamber, a pump for maintaining the high pressure of at least about one torr in the chamber and a power source coupled to the target. Additionally, the distance between the target and the substrate is set to ensure that collisions between the sputtered particles and the plasma occur in the trenches and vias on the substrate. The method comprises the steps of providing a process gas into the chamber such that the gas pressure is at least about one torr, generating a plasma from the process gas, and sputtering material from the target.

Abstract: A multi-step process for the deposition of a material into high aspect ratio features on a substrate surface is provided. The process involves depositing a material on the substrate at a first pressure for a first period of time and then depositing the material on the substrate at a second pressure for a second period of time. Modulation of the pressure influences the ionization and trajectory of the particles, which are ionized in a plasma environment. The method of the invention in one aspect allows for optimum deposition at the bottom of a high aspect ratio feature during a high pressure step and increased deposition on the sidewalls of the feature during at least a low pressure step.

Abstract: In accordance with an embodiment of the present invention, apparatus for ion-assisted magnetron deposition takes a form that includes a magnetron, a deposition substrate displaced from the magnetron, and an ion source also displaced from the magnetron and located so that the ion beam from the ion source is directed at the deposition substrate. The ion source is operated without an electron-emitting cathode-neutralizer, the electron current for this function being provided by electrons from the magnetron. In one specific embodiment, the ion source is operated so that the potential of the deposition substrate is maintained close to that of a common ground for the magnetron and the ion source. In another embodiment, the ion source is of the Hall-current type and the discharge current of the ion source is approximately equal in magnitude to the current of the magnetron discharge.

Abstract: In accordance with a first aspect of the invention, a plasma reactor having a chamber for containing a plasma and a passageway communicating with the chamber is enhanced with a first removable plasma confinement magnet module placed adjacent the passageway including a first module housing and a first plasma confinement magnet inside the housing. It may further include a second removable plasma confinement magnet module placed adjacent the passageway including a second module housing, and a second plasma confinement magnet. Preferably, the first and second modules are located on opposite sides of the passageway. Moreover, the first and second plasma confinement magnets have magnetic orientations which tend to oppose plasma transport or leakage through the passageway. Preferably, the module housing includes a relatively non-magnetic thermal conductor such as aluminum and is in thermal contact with said chamber body.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.

Abstract: A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate.

Abstract: A method for forming an improved copper inlaid interconnect (FIG. 11) begins by performing an RF preclean operation (408) on the inlaid structure in a chamber (10). The RF preclean rounds corners (210a and 206a) of the structure to reduce voiding and improve step coverage while not significantly removing copper atoms from the underlying exposed copper interconnects surfaces (202a). A tantalum barrier (220) is then deposited where one portion of the tantalum barrier is more tensile than another portion of the tantalum barrier. After formation of the barrier layer (220), a copper seed layer (222) is formed over a top of the barrier layer. The copper layer is formed while clamping the wafer with an improved clamp (85) which reduces copper peeling and contamination at wafer edges. Copper electroplating and chemical mechanical polishing (CMP) processes are then used to complete the copper interconnect structure.

Abstract: A thin film forming apparatus comprises a substrate holding means for holding a substrate, a target holding means for holding a target, a sputter gas supplying means for supplying into a reaction chamber a sputter gas for sputtering the target, a reactive gas supplying means for supplying a reactive gas, and power supplying means for supplying a power for generating a discharge to take place between the target and the substrate, wherein a partition member having a plurality of openings is provided between the target and the substrate, and a sputter gas is supplied to a space formed between the target and the partition member and a reactive gas is supplied to a space formed between the substrate and the partition member.

Abstract: Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.

Abstract: The invention is embodied in an inductively coupled RF plasma reactor including a reactor chamber enclosure defining a plasma reactor chamber and a support for holding a workpiece inside the chamber, a non-planar inductive antenna adjacent the reactor chamber enclosure, the non-planar inductive antenna including inductive elements spatially distributed in a non-planar relative to a plane of the workpiece to compensate for a null in an RF inductive pattern of the antenna, and a plasma source RF power supply coupled to the non-planar inductive antenna. The planar inductive antenna may be symmetrical or non-symmetrical, although it preferably includes a solenoid winding such as a vertical stack of conductive windings. In a preferred embodiment, the windings are at a minimum radial distance from the axis of symmetry while in an alternative embodiment the windings are at a radial distance from the axis of symmetry which is a substantial fraction of a radius of the chamber.

Abstract: The invention relates to a device for the prevention of arcing in vacuum sputtering installations. This device comprises a pulse generator which brings the cathode of the sputtering installation at predetermined intervals to a positive potential, whereby a deposing of layers on a target takes place. This deposing prevents the building-up of high voltages which can lead to arcing.

Abstract: A method and apparatus for vacuum coating plural articles employs a drum work holder configuration and a sputter source with a plurality of individually controlled anodes for effectively providing uniform coatings on articles disposed at different locations on the drum work holder. A small number of measured process parameters are used to control a small number of process variable to improve coating uniformity from batch to batch.

Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

Abstract: There is provided by this invention a novel inductively coupled plasma source apparatus that utilizes a transformer to induce closed path secondary plasma currents in a hollow metal housing that is directly cooled by a fluid. This plasma source apparatus is particularly useful for generating a high charged particle density source of ions, electrons, and chemically active species to serve various plasma related processes that may require high power densities. A hollow metal vacuum chamber is coupled to and electrically insulated from a metal vacuum process chamber by means of dielectric gaps that are well shielded from direct exposure to the plasma body. Electrons, photons and excited gaseous species are generated within the metal hollow chamber and process chamber to serve a wide variety of material, surface and gas processing applications. There is also provided by this invention a means of ganging together several hollow metal vacuum chamber assemblies about a single vacuum process chamber.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: A sputtering apparatus includes a process chamber for accommodating a semiconductor wafer. A susceptor is disposed on the bottom of the interior of the process chamber, and a sputter target is disposed at the top of the process chamber. A cylindrical ion reflecting plate is disposed along the inner wall of the process chamber. A lower grounded component, which forms a path along which electrons are released, is disposed below the ion reflecting plate so as to surround the susceptor. A magnet is disposed behind the target outside the process chamber. Negative potentials are applied to the target and semiconductor wafer, and a positive potential is applied to the ion reflecting plate. The magnet forms a closed magnetic field for trapping electrons in a plasma on the surface of the target, and a divergent magnetic field for directing the electrons in the plasma to the lower grounded component.

Abstract: A discharge plasma processing device comprising a chamber with an evacuation system, a magnetic field generation system and an electric field application system with which the feature of operation is first to form a magnetic neutral line in the vacuum chamber and second to produce a plasma along the magnetic neutral line by controlling the shape of the line, its position related to an object to be processed and the plasma parameters is presented as useful device for many kinds of plasma processing like as sputtering, etching and plasma enhanced CVD as freely programmed, for instance extremely in uniform on the surface of the object.

Abstract: The present invention pertains to a carrier layer and a contact enabled by the carrier layer which enables the fabrication of aluminum (including aluminum alloys and other conductive materials having a similar melting point) electrical contacts in multilayer integrated circuit vias, through holes, or trenches having an aspect ratio greater than one. In fact, the structure has been shown to enable such contact fabrication in vias, through holes, and trenches having aspect ratios as high as at least 5:1, and should be capable of filing apertures having aspect ratios up to about 12:1. The carrier layer, in addition to permitting the formation of a conductive contact at high aspect ratio, provides a diffusion barrier which prevents the aluminum from migrating into surrounding substrate material which operates in conjunction with the electrical contact.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.

Abstract: A sputtering device that efficiently guides sputtering particles ejected from a target to a film deposition subject and prolongs the interval at which a stick preventive member requires replacement. The sputtering device 1 has a vacuum chamber in which a specified sputtering target is placed so as to face a substrate 4 that is also placed in the vacuum chamber 2, and deposits a film on a surface of the substrate 4 using sputtering particles 20 ejected from the sputtering target 6; and particle ejection sections 60 constructed so as to slope at a specified angle of 30° to 60° with respect to the surface of the substrate 4, and respectively facing each other in the shape of a funnel are provided on the sputtering target 6. Lines of magnetic force 13 run from an N pole of a magnet 7a arranged at a rear surface of the target 6 to an S pole of a magnet 7b arranged around the target 6.

Abstract: Embodiments include devices and methods for sputtering material onto a workpiece in a chamber which includes a plasma generation area and a target. A coil is positioned to inductively couple energy into the plasma generation area to generate a plasma. A body is positioned between the workpiece and the target to prevent an amount of target material from being sputtered onto the workpiece. The body prevents an amount of target material from being sputtered onto the workpiece. The body may act as a dark space shield and inhibit plasma formation between the body and the target. The body may also act as a physical shield to block sputtered material from accumulating on the workpiece.

Abstract: A system and method for performing sputter deposition on a substrate include ion and electron sources that generate ion and electron currents directed at a target. Biasing circuitry biases the target with an a-symmetric bi-polar DC voltage pulse signal. The biasing circuitry is formed from positive and negative voltage sources and a high frequency switch. A current sensor, coupled to the biasing circuitry, monitors positive and negative currents from the target. A control system, coupled to the current sensor, varies the ion and electron currents independently. The ion and electron sources create a continuos plasma that is proximate the target. Ions attracted from the plasma sputter the target, and material from the target is deposited on the substrate. Electrons attracted from the plasma neutralize accumulated charge on the target.

Abstract: Disclosed is a facing-targets-type sputtering apparatus and method capable of forming a metal film under the conditions of low gas pressure and low discharge voltage. An opening is formed in each of two facing side faces of a vacuum chamber vessel or in each of two facing side faces of a box-type discharge unit attached to an opening portion of a vacuum chamber vessel. The two openings are covered by a pair of cooling blocks. Each cooling block holds a target facing a discharge space. Magnetic field generation means is disposed so as to surround each target and operative to generate a magnetic field that surrounds a discharge space provided between the paired targets. Electron reflection means is disposed above the exposed surface of each target along the periphery of the target. A DC power and a high-frequency power are applied between the vacuum chamber vessel and the targets.

Abstract: A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etchinq the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

Abstract: A correction mechanism including a magnetic body (51) is placed at a position between a vacuum chamber (21) and a steering coil (23) and where line of magnetic force generated from the steering coil is present, to correct torsion and/or bias of a plasma beam.

Abstract: A flangeless feed through supplies power to a device through a passage in a wall of a vacuum chamber. The feed through includes an insulator ring securely positioned in the passage, a first threaded insert, and a second threaded insert which engages the first threaded insert, wherein the insulator ring is gripped by the first and second threaded inserts. The feed through is installed by securely positioning the insulator ring within the passage, inserting the first threaded insert into the passage, and then connecting the first and second threaded inserts to grip the insulator ring.

Abstract: The present invention provides a method and apparatus for forming a copper layer on a substrate, preferably using a sputtering process. The sputtering process involves bombarding a conductive member of enhanced hardness with ions to dislodge the copper from the conductive member. The hardness of the target may be enhanced by alloying the copper conductive member with another material and/or mechanically working the material of the conductive member during its manufacturing process in order to improve conductive member and film qualities. The copper may be alloyed with magnesium, zinc, aluminum, iron, nickel, silicon and any combination thereof.

Abstract: Coils for use within high density plasma chambers are provided that do not electrically disconnect or short circuit following repeated depositions and that produce films having reduced in-film defect densities. To reduce in-film defect densities, dielectric inclusion content, porosity, grain size and surface roughness of a coil are reduced, while the mechanical strength of the coil is increased so as to both decrease defect generation and thermal creep rate (e.g., to prevent electrical disconnection or short circuiting of the coil following repeated depositions).

Abstract: A sputter deposition chamber may be fitted with measures to prevent or reduce electrical noise that might otherwise interfere with a controller for the sputter deposition chamber. A grounded shield plate may be coupled to an insulating member by which a sputtering target is mounted in the chamber. A ground line, separate from a power supply line, may be coupled to the chamber's enclosure wall and to a varying power supply. One or more filters may be coupled in series between chamber components and a controller associated with the chamber.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: The occurrence of internally-formed contaminants or negatively-charged particulates within a plasma is minimized by preventing such from becoming trapped in the plasma. The plasma is formed in a plasma chamber having control electrodes and reference electrodes. The control electrodes are biased with a negative potential. The plasma assumes a potential more positive than the control electrodes. The reference electrodes are then biased to be more positive than the plasma. Hence, negative ions or negatively-charged particulates in the plasma are attracted to the more positive reference electrodes, and thus escape the plasma without being trapped therein, and are not available to serve as nucleation or agglomeration points for contaminants. A pair of Helmholtz coils produce a magnetic field having magnetic field lines that run longitudinally between the control electrodes.

Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

Abstract: While interior of a vacuum chamber is maintained to a specified pressure by introducing a specified gas from a gas supply unit into the vacuum chamber and simultaneously performing exhaustion by a pump as an exhauster, a high-frequency power of 100 MHz is supplied by an antenna use high-frequency power supply to an antenna provided so as to project into the vacuum chamber, by which plasma is generated in the vacuum chamber. The vacuum chamber grounded, and separated into a region on one side on which the substrate is present and a region on the other side on which the substrate is absent by a punching metal plate nearly all the peripheral portion of which is grounded.

Abstract: A sputtering hybrid coil for a plasma chamber in a semiconductor fabrication has an enhanced sputtering surface and an internal coolant carrying channel thermally coupled to the sputtering surface to cool the sputtering surface and the coil.

Abstract: This invention discloses ionization sputtering apparatuses which have a function for ionizing sputtered particles. Those apparatuses comprise an ionization means for ionizing sputtered particles from a target. The ionization means generates a plasma by applying radio frequency energy with plasma generation gas at an ionization space between the target and a holder holding a substrate. An disclosed apparatus comprises a magnetic device preventing the plasma from diffusing from the ionization space. Another disclosed apparatus comprises a magnetic device which orients the ionized sputtered particles toward the substrate.

Abstract: A magnetron sputter reactor and its method of operation which produces a high fraction of sputtered metal ions and in which the metal ions are confined by a positively biased shield and attracted to a negatively biased pedestal electrode supporting the wafer to be sputter coated. The shield may be positively biased to between 10 and 50VDC, preferably between 15 and 40VDC while the negative self-bias on the pedestal is typical tens of volts. A grounded shield is positioned between the target and the biased shield.

Abstract: In order to form a thin film having a high aspect ratio, a space between a target within a vacuum chamber and a substrate table is enclosed by an anode electrode and earth electrodes. The anode electrode is positioned on the side of the target, and a positive voltage is applied. The earth electrodes are positioned on the side of the substrate table and are connected to earth potential. A trajectory of sputtering particles curved in the direction of flying off by the anode electrode is corrected and is made incident in a perpendicular manner to a surface of the substrate on the substrate table. The amount of sputtering particles incident to the surface of the substrate can therefore be increased and made perpendicularly incident; and a thin film of a high aspect ratio can be formed.

Abstract: The invention relates to a PVD coating method and to a PVD coating device with a chamber in which at least one target cathode, at least one anode and at least one substrate holder which is intended to hold at least one substrate are arranged, and with a control device which delivers a first voltage in order to supply the target cathode with a negative electrical potential relative to the anode in order to form a plasma in which the substrate is arranged, and which delivers a second voltage in order to supply the anode with a positive electrical potential relative to the chamber wall. In this sputter-coating device, the ion fraction of the target material which can be achieved is too low for qualitatively satisfactory coating properties. It is increased according to the invention in that the control device delivers a third voltage which supplies the substrate with an electrical potential that is more negative than the potential of the anode.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage on a substrate by PVD. A target provides a source of material to be sputtered by a plasma and then ionized. Ionization is facilitated by maintaining a sufficiently dense plasma using, for example, an inductive coil. The ionized material is then deposited on the substrate which is biased to a negative voltage. A signal provided to the target during processing includes a negative voltage portion and a zero-voltage portion. During the negative voltage portion, ions are attracted to the target to cause sputtering. During the zero-voltage portion, sputtering from the target is terminated while the bias on the substrate cause reverse sputtering therefrom. Accordingly, the negative voltage portion and the zero-voltage portion are alternated to cycle between a sputter step and a reverse sputter step.

Abstract: Three technologies realize monocrystalline three-dimensional (3-D) integrated circuits: (1) silicon sputter epitaxy permitting fast growth at low temperature; (2) real-time pattern generation using a pixel-by-pixel programmable device to create a patterned beam of energetic radiation; and (3) flash diffusion focuses through a projector barrel the patterned beam on a silicon sample, causing localized dopant diffusion from a heavily doped region at the surface into the underlying region. Removing the heavily doped layer leaves a 2-D doping pattern. Creating additional 2-D patterns on top of it through process repetition produces a buried 3-D doping pattern. One configuration places projector barrel and sample in fixed positions inside the sputtering chamber and a ring of targets around the barrel facing the sample with targets of a given kind symmetrically positioned in the ring. Cobalt can be substituted for the doping layer and can be driven in creating silicide conductive patterns.

Abstract: A sputtering system includes a vacuum chamber, a sputtering electrode provided in the vacuum chamber, a target supported on the sputtering electrode with a front surface of the target and a substrate disposed in the vacuum chamber so as to be opposed to each other. A high-frequency or DC power source supplies a high-frequency or DC power to the sputtering electrode to generate plasma on the target, and an antenna is provided for generating an electromagnetic wave and is disposed outside the vacuum chamber and near the target. An electromagnetic-wave inlet window for introducing into the vacuum chamber an electromagnetic wave generated from the antenna is provided in a wall of the vacuum chamber.

Abstract: The uniformity, density and directionality of an ionized metal plasma is significantly improved by positioning a cylindrical target between an RF coil and the chamber wall and wafers above and below the coil at opposite ends of the sputtering chamber. Ions generated by electron impact are attracted to the biased substrates, thereby providing essentially void free interconnections through insulating layers having through holes with very high aspect ratios.

Abstract: A deposition system in a semiconductor fabrication system provides at least one electron gun which injects energetic electrons into a semiconductor fabrication chamber to initiate and sustain a relatively high density plasma at extremely low pressures. In addition to ionizing atoms of the extremely low pressure gas, such as an argon gas at 100 microTorr, for example, the energetic electrons are also believed to collide with target material atoms sputtered from a target positioned above a substrate, thereby ionizing the target material atoms and losing energy as a result of the collisions. Preferably, the electrons are injected substantially tangentially to the walls of a chamber shield surrounding the plasma in a magnetic field generally parallel to a central axis of the semiconductor fabrication chamber connecting the target to and the substrate.