Abstract: The invention provides a method for depositing a metal film on a substrate, comprising generating a high density plasma in a chamber, sputtering metal particles from a target to the substrate, and applying a modulated radio frequency (RF) bias to the substrate during deposition. Another aspect of the invention provides an apparatus for depositing a metal film on a substrate comprising a high density plasma physical vapor deposition (HDP PVD) chamber and a controller to modulate a RF bias power applied to a substrate in the chamber.

Abstract: The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A plasma is struck and maintained in a processing region by coupling energy into one or more gases. A target disposed in the processing region provides a source of material to be sputtered and then ionized in the plasma environment. During deposition of material onto the substrate, the plasma density is modulated by varying the energy supplied to the plasma. During a period of plasma decay, a bias to a substrate support member is increased to a relatively higher power to periodically enhance the attraction of positively charged particles to the substrate during the afterglow period of the plasma. In one embodiment, a bias to the target is also modulated.

Abstract: An elongate emitter is used as a cathode to coat material onto a cylindrical workpiece by magnetron sputterinig. Where the inside surface of the workpiece is coated, the workpiece itself is used as the vacuum sputtering chamber. The overlap between the plasma field and the magnetic field creates a coating zone which is moved along the length of the workpiece to evenly coat the workpicce.

Abstract: An electro-magnet array for use in a sputtering apparatus. The array has a magnetisable core member extending substantially horizontally and having magnetisable outward projections arranged as at least two pairs of symmetrically opposed projections projecting outwardly from the core member. A pole member is associated with each projection and vertically displaced with respect thereto. A magnetisable coupler is arranged to couple each pole piece magnetically to its respective projection. A magnetising coil around each projection is arranged for producing a magnetic field aligned substantially with a horizontal axis of symmetry of its respective projection in dependence upon the direction of flow of electric current through the magnetising coil.

Abstract: A method and an apparatus are disclosed for sputter deposition of an insulating material on a substrate in a continuous mode of operation. A novel design for an anode assembly and driving power supply is disclosed to permit this. Single or multiple anodes are used, which at any given time may be biased negatively with respect to the plasma, so that any insulating material which may have been deposited thereupon may be sputtered away so as to provide a clean positive anode to the system, and at least for some period of time is biased positively so that it acts as an anode. The removal of any insulating material which may have formed on the anode structure permits its continuing effective use in collecting electrons from the plasma when it is biased positively, and therefore its continuing effective use as an anode for the system, permitting continuous operation of the system.

Abstract: This invention relates to sputtering materials onto workpieces. Sputter Apparatus which is generally indicated at 10, is provided with additional D.C. coils 23, 23, to increase uniformity of deposition.

Abstract: A plasma reactor for physical vapor deposition (PVD), also known as sputtering, which is adapted so that the atomic species sputtered from the target can self-sustain the plasma without the need of a working gas such as argon. The method is particularly useful for sputtering copper. According to the invention, a bias ring arranged around the wafer and rising somewhat above it is positively electrically biased to control the plasma potential, and hence to control the energy and directionality of the ions being sputter deposited on the wafer. The bias ring may be a separate biasing element which can be positioned at a selected height above the wafer.

Abstract: A method of applying a coating to a metallic article (10) comprises placing the metallic article within a hollow cathode (38) in a vacuum chamber (30), evacuating the vacuum chamber (30), applying a negative voltage to the hollow cathode (38) to produce a plasma and such that the material of the hollow cathode (38) is sputtered onto the metallic article (10) to produce a coating (22). A positive voltage (V1) is applied to the metallic article (10) to attract electrons from the plasma to heat the coating (22) and so inter-diffuse the elements of the metallic article (10) and the protective coating (22) and a negative voltage (V2) is applied to the metallic article (10) to attract ions from the plasma to bombard the coating (22) to minimize defects in the coating (22).

Abstract: Described is a method for coating surfaces using a facility having sputtering electrodes, which has at least two electrodes that are spaced apart from one another and arranged inside a process chamber, and an inlet for a process gas. The two sputtering electrodes are acted upon by a bipolarly pulsed voltage in such a way that they are alternately operated as cathodes and as anodes. In addition, the frequency of the voltage is set between 1 kHz and 1 MHz. Furthermore, and that the operating parameters are selected in such a way that in operation, the electrodes are at least partially covered by a coating material.

Abstract: An RF induction coil for inductively coupled ionized sputtering applications having at least one extremely smooth surface, on the order of about 30 &mgr;m or less, which faces, substantially resides within, or is immediately proximate a plasma field in a sputtering chamber. The smooth induction coil requires only an extremely short burn-in time to remove surface damage and contaminants until a steady-state sputtering rate is achieved. The smooth induction coil may be constructed of target material, or a material distinct from the target material, and can be of any suitable geometry or configuration.

Abstract: The invention relates to an improved sputter target that is a combination sputter target and induction antenna. In one embodiment, when the sputter target is energized sputter material particles are sputtered away from the sputter target and a plasma is induced. In another embodiment, the sputter target is energized by an energy source. In yet another embodiment, the energy source includes a bias power supply and an induction power supply. The bias power supply applies a potential to the sputter target relative to an object. The induction power supply applies a current to the sputter target. The potential and the current promote the sputtering away of the sputter target, the formation of the plasma and the anisotropic distribution of the sputtered material particles.