Abstract: A plasma processing apparatus includes a processing chamber to be depressurized and exhausted, a sample placement electrode provided in the processing chamber and having a sample placement surface on which a substrate to be processed is placed, an electromagnetic generation device to generate plasma in the processing chamber, a supply system that supplies processing gas to the processing chamber, a vacuum exhaust system that exhausts inside the processing chamber, a heater layer and a base temperature monitor that are disposed on the sample placement electrode, a wafer temperature estimating unit that estimates a wafer temperature from the base temperature monitor and plasma forming power supply, and a controller that regulates the heater corresponding to output from the temperature estimating unit.

Abstract: The invention is directed toward a method and apparatus which can be used to allow the sputter deposition of material onto at least one article to form a coating on the same. The new form of magnetron described herein allows an increase in sputter deposition rates to be achieved at higher powers and without causing damage to the coating being created. This can be achieved by improved cooling and use of a relatively high magnetic field in the magnetron while at the same time increasing the power to the magnetron by increasing the current at a rate faster than the voltage.

Abstract: The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.

Abstract: A sputtering apparatus for coating workpieces includes a preheating case defining a preheating cavity, a deposition case defining a deposition cavity, a bridge assembly connecting the preheating case to the deposition case, two supporting assemblies, posts for fixing the workpieces, and a transmission assembly positioned in the preheating case. The bridge assembly includes a bridge member defining a passage and a valve moveably connected to the bridge member. The valve communicates the preheating cavity with the deposition cavity through the passage or separates the preheating cavity from the deposition cavity. One supporting assembly is received in the preheating cavity, and the other supporting assembly is received in the deposition cavity. The transmission assembly removes the posts from one of the supporting assemblies and fixes the posts to the other supporting assembly.

Abstract: A magnetron sputtering device includes a holding compartment, a target assembly, a supporting base, and a rotation module. The holding compartment is divided to a reactive chamber and a receiving chamber. The target assembly includes two cooling plates, two magnetic units, and a target. The two cooling plates define a magnetron room communicating with the receiving chamber. The two magnetic units are suspended in the magnetron room. The target is attached on the cooling plate under the magnetic units. The supporting base is for supporting work-pieces. The rotation module is received in the receiving chamber, and jointed to the two magnetic units. The rotation module drives the magnetic units to spin about a central axis thereof and move back and forth along a direction lengthwise of the magnetic unit.

Abstract: The vacuum heating and cooling apparatus can rapidly heat and cool only the substrate after film-forming treatment while maintaining high vacuum. The temperature rise of members in the chamber with time caused by accumulation of heat is suppressed, and the variation of temperature between substrates is decreased.

Abstract: A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.

Abstract: An end-block and a deposition apparatus including an end-block are provided. The end-block includes a base body which is adapted to be connected to the deposition apparatus in a non-rotational manner. The end-block further includes a rotary bearing arranged around the base body and a rotor which is arranged around the rotary bearing and adapted to receive a rotatable target.

Abstract: Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode.

Abstract: A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

Abstract: A magnet assembly for a rotary cathode having a rotatable target cylinder is provided. The magnet assembly comprises a coolant tube configured to be positioned within the target cylinder, and a magnet bar configured to be positioned within the target cylinder and extending substantially parallel to the coolant tube. The magnet bar moves laterally with respect to the target cylinder in a synchronous manner with rotation of the target cylinder.

Abstract: A cooling system that cools a wafer in a vacuum chamber of a sputtering apparatus, includes a wafer cooling stage for cooling the wafer, a cooling mechanism for cooling the wafer cooling stage, cooling gas supply units which introduces a cooling gas to the wafer cooling stage, a wafer rotating mechanism which holds the wafer in a state separated from the wafer cooling stage by a predetermined gap, and is rotated while holding the wafer, and a driving mechanism which rotates the wafer rotating mechanism at a predetermined rotational speed.

Abstract: Claimed is a sputtering target system comprising a plurality of backing plates to be individually cooled. Each backing plate is provided on its back side with a meandering groove that is closed off by a sealing plate. The sealing plate is welded around its circumference to the backing plate and at the same time is welded to at least one ridge located at a distance from the frame, which separates two grooved sections from one another. The sealing plate thus welded to the backing plate not only closes off the grooves to form a cooling channel, but also is used for reinforcement of the otherwise relatively flat backing plate.

Abstract: An in-line system for manufacturing a solar cell is provided. The in-line system includes a substrate loading zone for inputting a substrate, a deposition part for sequentially continuously depositing a light absorption layer on a top surface of the substrate, and a thermal processing part for thermally processing the substrate transferred from the deposition part. The substrate loading zone and the thermal processing part are sequentially installed in a partitioned internal space of one integration chamber.

Abstract: Described herein is an apparatus and a method for producing atom clusters based on a gas discharge within a hollow cathode. The hollow cathode includes one or more walls. The one or more walls define a sputtering chamber within the hollow cathode and include a material to be sputtered. A hollow anode is positioned at an end of the sputtering chamber, and atom clusters are formed when a gas discharge is generated between the hollow anode and the hollow cathode.

Abstract: An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.

Abstract: A supply end block to supply a sputter cathode with a coolant and electrical voltage, includes a housing with a coolant connection and a current connection as well as a support shaft mounted to rotate, on which a target tube is fastened. The coolant connection and current connection are brought together directly at a feed site so that the coolant is brought to the potential of the applied electric voltage on entering the housing of the end block. Optimal cooling of the current feed is achieved, and optimal potential equalization of the coolant simultaneously occurs.

Abstract: A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic or polymer sheets having planar heater zones, power supply lines, power return lines and vias.

Abstract: A method and apparatus for depositing a coating material on a surface of a substrate by an ion plasma deposition process using a hollow cathode is disclosed. The cathode may be a substantially cylindrical hollow cathode. A plasma arc is formed on the outer circumference of the cathode to remove coating material from the cathode, which is then deposited on a surface of a substrate. An internal arc drive magnet is contained within the hollow bore of the cathode and cooling is provided to the magnet during operation.

Abstract: A sputtering chamber has a sputtering target comprising a backing plate and a sputtering plate. The backing plate comprises a backside surface having a plurality of concentric circular grooves and a plurality of arcuate channels which intersect the circular grooves. The sputtering target can be positioned abutting a heat exchanger housing which holds heat transfer fluid and a plurality of rotatable magnets.

Abstract: An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

Abstract: An exemplary magnetron sputtering device includes a target, a magnet arrangement, and a driving system. The target defines a magnet-receiving space therein. The magnet arrangement is received within the magnet-receiving space. The driving system is configured for driving the magnet arrangement to spin and move back and forth.

Abstract: A coating apparatus includes a shielding casing defining a chamber, a substrate holder received in the chamber and a target assembly located inside the shielding casing. The substrate holder is configured to hold a substrate. The target assembly faces the substrate. The target assembly includes a target frame, two opposite target electrodes, a number of magnetrons and a transport unit. The target base includes two opposite end surfaces and a number of side surfaces interconnecting the end surfaces. The two opposite target electrodes are fixed on the two opposite side surfaces. The magnetrons are received in the receiving cavity and disposed between the target electrodes. The transport unit is configured to carry the magnetrons to circulate therearound.

Abstract: A heat shield employed in semiconductor processing apparatus comprises a high performance insulation that has low thermal conductivity, such as, below the thermal conductivity of still air over a wide range of temperatures utilized in operation of the apparatus. As an example, the thermal conductivity of the insulation may be in the range of about 0.004 W/m·h to about 0.4 W/m·h over a temperature range of about 0° C. to about 600° C. or more. The deployment of the high performance heat shield reduces the power consumption necessary for the heater by as much as 20% to reach a desired processing temperature as compared to a case of heater power consumption required to reach the same desired temperature without the shield.

Abstract: A target apparatus for producing a radioisotope having improved cooling performance including a cavity member including a cavity accommodating H218O concentrate and producing 18F through a nuclear reaction between the H218O concentrate and protons irradiated onto the H218O concentrate, wherein the cavity member includes a front aperture and a rear aperture disposed in opposite directions on a path in which the protons are irradiated and connected to the cavity so that the cavity has openings. wherein a thermo-chemically stable layer plated with titanium or niobium is formed in an inner circumference of the cavity.

Abstract: A deposition system includes a drum for supporting a web substrate during deposition that defines a plurality of apertures in an outer surface for passing cooling gas. A gas manifold includes an input that is coupled to an output of a gas source and at least one output that is coupled to the plurality of apertures in the outer surface of the drum. The gas manifold provides gas to the plurality of apertures that flows between the outer surface of the drum and the web substrate, thereby increasing heat transfer from the web substrate to the drum. At least one deposition source is positioned so that material deposits on the web substrate.

Abstract: An apparatus for dry deposition of thin films of cadmium telluride and other material layers required for a photovoltaic device. The apparatus includes a vacuum deposition chamber. A preheat station and source container are provided in the chamber, and the source container and material therein are heated to a deposition temperature. An integral shutter is placed in the chamber, and the shutter includes a planar body with a carrier receiver extending out from one end shaped as a two-prong fork or a closed loop. The shutter is positioned with the receiver and a received carrier in the preheat station and the body covering the source container outlet. The preheat station heats the carrier and sample to avoid thermal shock during deposition. The shutter is then positioned with the body moved from the source container outlet and the carrier receiver positioned to expose a sample surface to the deposition material.

Abstract: A deposition apparatus and a method for sputtering material on a substrate is provided with a substrate holder for holding the substrate, a rotatable target adapted for being sputtered, and a heating system including a back side heating for heating the substrate from the back and a front side heating for heating the substrate from the front. The rotatable target acts as the front side heating and is adapted for heating the substrate to a temperature of at least 100° C. A method for performing this method is disclosed.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers. An electrically insulated target backing plate between each magnet and a target has a liquid channel running through it for controlling temperature, where the liquid channel has a wider cross-sectional area around the middle portion of the target backing plate to increase cooling of the middle portion of the target. The distance between the magnets and the targets is made very small by a thin aluminum plate fixed to the bottom segment of the target backing plate by a dip brazing process.

Abstract: A sputtering cathode (1) for coating processes in a vacuum chamber (18) comprises one at least single-piece target plate (2) mounted on a metallic diaphragm (3). On the side of the diaphragm (3) facing away from the target plate (2) is disposed a cooling agent channel with an inflow line (9) and an outflow line (10) for a cooling agent and a hollow space (7) for at least one magnet system (5). The magnet system (5) is disposed in a supporting tub (6) sealed against the diaphragm (3) and not exposed to the cooling agent. The entire configuration is disposed on a supporting structure (12).

Abstract: Implantable medical devices that include cathodic arc produced structures are provided. Cathodic arc produced structures of the invention may be thick, stress-free metallic structures that have configurations heretofore not available in implantable medical devices. In yet other embodiments, the structures may be crenulated or porous layers. Also provided are methods of producing implantable medical devices as well as systems for practicing the subject methods.

Abstract: A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.

Abstract: The present invention provides a thin film formation apparatus which includes a plurality of chambers, and performs processing for forming thin films on two surfaces of a substrate transferred to the plurality of chambers, wherein a first sputtering chamber of the plurality of chambers includes a first sputtering film formation unit configured to perform a sputtering film formation process on a first surface of the substrate, and a first heating unit configured to heat a second surface opposite to the first surface of the substrate, and a second sputtering chamber of the plurality of chambers includes a second heating unit configured to heat the first surface of the substrate having undergone the sputtering film formation process performed by the first sputtering chamber, and a second sputtering film formation unit configured to perform a sputtering film formation process on the second surface of the substrate heated by the first sputtering chamber.

Abstract: A sputtering apparatus includes a first target accommodating unit to accommodate a first target for film formation on a substrate; a first heater, arranged to surround the first target, for heating the substrate; and a second target accommodating unit arranged to surround the first heater to accommodate a second target for film formation on the substrate.

Abstract: A variable thickness sputtering target which increases the target material thickness at strategic locations to greatly improve the yield of usable wafers per target, and a method of manufacturing such target comprising forming a generally flat and circularly shaped target blank so that a thickness dimension between the top and bottom surfaces decreases as a function of radius of the target blank. The variable thickness target blank is then formed into a variable thickness dome shaped target member having a bottom portion and a sidewall portion, wherein a wall thickness of said variable thickness dome-shaped target member is thickest proximate a center portion of said bottom portion. In one embodiment of the invention, the variable thickness target blank is formed by clock rolling (or compression rolling) the target blank with crowned rolls to obtain a variable thickness target blank.

Abstract: Apparatus for coating a substrate with a material in a chamber subject, during use, to substantial evacuation, which includes a coating station within the chamber for coating a substrate by sputtering and/or by evaporation; at least one treating station disposed in serial with the coating station and equipped with a plasma treater incorporating a plasma generator in sufficient proximity to the substrate to treat the substrate; a magnetic device for generating a magnetic field; at least one cylindrical electrode surrounding the magnetic device, the plasma treater incorporates a device for rotating the electrode about its longitudinal axis.

Abstract: The invention relates to a method for coating one or more sides of substrates with catalytically active material, comprising material deposition under vacuum in a vacuum chamber, wherein the following steps are performed: (a) loading the vacuum chamber with at least one substrate, (b) closing and evacuating the vacuum chamber, (c) cleaning the substrate by introducing a gaseous reducing agent into the vacuum chamber, (d) increasing the size of the substrate surface by depositing a vaporous component on the substrate surface, (e) coating by a coating process taken from the group of plasma coating processes, physical gas deposition, sputtering processes or the like, wherein one or more metals and/or alkaline and/or earth alkaline metals or their oxides are applied to the surface of the substrate. This method may be used, for example, for coating electrodes which are used in the chlor-alkali electrolysis.

Abstract: The invention includes backing plates having coolant deflectors with at least a portion of each of the deflectors being nonlinear. Projections projecting from the backing plate are configured to insert into openings within a sputtering target. The invention includes targets having at least one opening to receive a fastener extending into the target through a back surface. The invention includes a target assembly having projections projecting from the backing plate and insertable within openings within the target. The invention includes a target assembly having a plurality of coolant deflectors disposed between the target and the backing plate. A segment of each of the deflectors is nonlinear. The invention includes methods of cooling a target. Coolant deflectors are disposed within a gap between the target and a backing plate with coolant deflectors being nonlinear along at least a portion of their length.

Abstract: A liquid and a gas is constantly filled into a target chamber of a target. Then the liquid and the gas flow around the chamber and are flown out. By doing so, the target is effectively cooled down.

Abstract: An apparatus for making a magnetic recording medium, including a quartz lamp within a sputtering chamber to heat the medium between the application of layers and without disruption to the vacuum integrity of the sputtering system. A process using the apparatus for manufacturing the magnetic recording medium is also claimed.

Abstract: Provided is a film forming apparatus and a film forming method that are capable of enhancing film property uniformity and improving productivity. A film forming apparatus (1) according to the present invention includes substrate temperature adjustment means (heat source 10) for adjusting substrate temperature, and film formation is performed such that sputtered particles are incident on a substrate W on a rotary substrate support table (3) from an oblique direction. By thus retaining the substrate temperature constant in film formation, it is possible to reduce temperature unevenness on the substrate in film formation and to uniformize in-plane film property.

Abstract: A vacuum sputtering cathode includes a target support having a cooler. The cathode includes a support base on which a frame is disposed. The frame defines at least one cavity for the circulation of a coolant. A membrane is disposed on top of the frame and the base, frame and membrane are assembled at the periphery of the target.

Abstract: An apparatus for vacuum coating, including a vacuum chamber including at least one magnetron (2), each magnetron holding a target including at least one metal sheet (24) from which metal particles are transferred to a surface of a receiving item. The magnetrons have a channel system for supplying and discharging coolant. The magnetrons (2) preferably include an elongated body having mutually movable and interacting parts which are an outer part (14) having a longitudinal cavity and which outwardly at opposite sides of the cavity has inwardly facing holder members (12) and an inner part (18) located in the longitudinal cavity. these inner parts outwardly along opposing sides has edge parts for interacting with the holder members for clamping the target (24), which in size is adapted to the magnetron (2). Each of the magnetrons includes means for displacing the inner part (18) in relation to the outer part (14).

Abstract: A sputtering cathode assembly attachable to a cathode mounting plate for a thin-film vapor deposition chamber. The cathode assembly includes a magnet module and a cathode body generally coextensive with and sealingly housing the magnet module and defining a water channel between a top plate of the cathode body and a cooling channel plate of the magnet module. An elongated target is releasably connected atop and coextensive with the top plate and secured in place by a unique threaded fastener engagement between a target clamp and an edge portion of the cathode body whereby the target is replaceable without disassembly of the cathode body. Unique replaceable elongated fastener receiving inserts releasably secure said target against the target plate to effect target replacement without disassembly of the cathode body.

Abstract: A sputtering target assembly and method for bonding a sputtering target to a backing plate is disclosed. When insulatively bonding a sputtering target to a backing plate, it is necessary to ensure that the bonding material has good thermal conductivity so that the temperature of the target can be effectively controlled. It is also important to not have electrical conductivity through the bonding materials. In order to achieve both goals, it is beneficial to utilize an elastomer with diamond powder filler. Diamond power has very good thermal conductivity, and it also has very good dielectric strength. Diamond is a thermally effective and cost effective substitute for silver in insulative bonding.

Abstract: A sputtering target includes an outer target tube, an inner support tube supporting a magnet carrier bar extending along substantially the entire length of the inner support tube; and a water cooling circuit including at least one passageway within the inner support tube with an inlet at one end thereof adapted to receive cooling water from an external source, at least one outlet aperture at an opposite end thereof opening to a cooling plenum radially between the inner support tube and the outer target tube; and a baffle comprising a substantially flat plate attached to the inner support tube adjacent the opposite end, the plate extending radially within the plenum between the inner support tube and the outer target tube and having an array of flow apertures therein.

Abstract: The invention provides a chuck plate assembly that includes a shadow mask formed with a predetermined pattern; a shadow mask frame holding the shadow mask and having heat-radiating and cooling functions; a substrate aligned with the shadow mask and onto which deposition materials from a deposition source are deposited; and a chuck plate, attaching the substrate to the shadow mask, that includes a refrigerant circulating duct. The temperature of the substrate is optimized in consideration of the temperature of the shadow mask so that an alignment error due to thermal deformation is minimized. That is, the temperature of the shadow mask itself is prevented from rising, and thereby prevents deformation of the shadow mask due to thermal expansion, which improves the precision of a substrate pattern position.

Abstract: Claimed is a sputtering target system comprising a plurality of backing plates to be individually cooled. Each backing plate is provided on its back side with a meandering groove that is closed off by a sealing plate. The sealing plate is welded around its circumference to the backing plate and at the same time is welded to at least one ridge located at a distance from the frame, which separates two grooved sections from one another. The sealing plate thus welded to the backing plate not only closes off the grooves to form a cooling channel, but also is used for reinforcement of the otherwise relatively flat backing plate.

Abstract: Methods and devices are provided for improved sputtering systems. In one embodiment of the present invention, a sputtering system for use with a substrate is provided. The system comprises of a sputtering chamber; at least one magnetron disposed in the chamber; and at least one, non-convection based cooling system in the sputtering chamber. This system may optionally use at least one chilled roller positioned along the path of the substrate. This chilled roller may be in the sputtering chamber or optionally, outside the sputtering chamber. This system may optionally include at least one emissivity based cooling apparatus located within the chamber for drawing heat away from the substrate. In another embodiment the present invention, the sputtering system may use a non-convection, non-conduction system for cooling the substrate. The system may use a non-contact cooling system that is spaced apart from the substrate.

Abstract: A method for depositing a coating using a magnetron sputtering apparatus and a magnetron sputtering apparatus comprising: a support structure comprising a hollowed shaft comprising a central conduit having a longitudinal axis; a sputter target material defining a bore which is external to the central conduit, the bore also having the longitudinal axis a magnet assembly supported about the support structure, the magnet assembly having a first end, a second end, and a plurality of magnets supported therebetween and being effective, upon rotation, to generate a circumferential external magnetic field about the sputter target material; a first sealed end extending radially inward from adjacent the sputter target material proximate the first end of the magnet assembly and a second sealed end extending radially inward from adjacent the sputter target material proximate the second end of the magnet assembly, wherein the first sealed end, the second sealed end, and the sputter target material seal the magnet assembly