Abstract: A device for the sputter application of hard material coatings, including an exhaustible vacuum chamber, at least one sputtering source for depositing a coating material, a plurality of fixtures for supporting a plurality parts to be coated, the fixtures being mounted on planet gears which are movable via a planetary drive, a centrally disposed heating device, a reactive gas inlet, and a plurality of movable screens for covering the at least one sputtering source, the screens being arranged to surround the fixtures, wherein the heating device, the screens, and the planetary drive comprise an assembly which is removable from the vacuum chamber.

Abstract: A flexible, modular thin film deposition machine comprises a number of batch process stations which define a batch process path. At least one of the batch process stations is a thin film deposition station including a serial deposition chamber and an inter-chamber disk transfer mechanism. The disks move in batches along the process path, being individually processed only at the deposition station. Within the serial sputtering chambers of at least one deposition station there is at most partial environmental separation, whereas between different deposition stations the separation is complete. The resulting simplification of the transport mechanism provides for a high throughput rate while simultaneously minimizing contamination of individual thin film layers.

Abstract: A sputtering apparatus for forming a sputtered film on a substrate held on a substrate holder in a vacuum chamber includes a target, a deposition preventing plate provided between the target and the substrate holder, a substrate holder carrying mechanism, and a moving mechanism for moving the substrate holder carrying mechanism to change a distance between the substrate and the deposition preventing plate.

Abstract: In a plasma vapor deposition reactor for depositing an electrically insulating material using a DC sputtering process the plasma is stabilized, maintaining its sputtering efficiency, by provision of a secondary anode, preferably held at a positive bias with respect to the primary anode. The secondary anode is shielded from exposure to the stream of sputtered material, yet situated close enough to the plasma discharge to attract electrons from the plasma to maintain its charge balance. In reactive sputtering, the sputtering chamber contains both a sputtering gas, for example argon, and a reactive gas, for example oxygen. Positive ions of the sputtering gas bombard a target of the material to be sputtered. Atoms of the target material, the sputtered atoms, are emitted from the target in all directions into the chamber, some of them falling on the substrate surface to be sputter coated. At the surface or in the chamber they chemically combine with the reactive gas.

Abstract: Ionized physical vapor deposition (IPVD) is provided by a method of apparatus for sputtering conductive metal coating material from an annular magnetron sputtering target. The sputtered material is ionized in a processing space between the target and a substrate by generating a dense plasma in the space with energy coupled from a coil located outside of the vacuum chamber behind a dielectric window in the chamber wall at the center of the opening in the sputtering target. Faraday type shields physically shield the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space. The location of the coil in the plane of the target or behind the target allows the target to wafer spacing to be chosen to optimize film deposition rate and uniformity, and also provides for the advantages of a ring-shaped source without the problems associated with unwanted deposition in the opening at the target center.

Abstract: A passive first-order band reject, or notch, filter characteristic is introduced into a supply and/or return line (18, 20) of a heat transfer system (12) that uses electrically conductive liquid heat transfer medium in contact with radio frequency electrified components (14) typical in sputtering or etching manufacturing equipment. The heat transfer medium line (20) is coiled to create an inherent inductance (L2). A capacitive element (C2) is operatively connected across the coil (29) in the heat transfer medium line (20), the amount of capacitance chosen so that the resonant frequency is at the RF frequency of the components (14) being thermally conditioned. Thus, a high impedance is created for that frequency. The coil (29) and capacitor (C2) combination is protected from physical and electromagnetic interference by an enclosure (44).

Abstract: A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1×10−1 Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.

Abstract: The present invention relates to an artificial latticed multi-layer film deposition apparatus for depositing on a substrate a gigantic magneto-resistive effect film (GMR film) having an artificial lattice structure formed of magnetic metal films and non-magnetic metal films alternately laminated one over the other and its object is to provide the artificial latticed multi-layer film deposition apparatus to enable easy and secure deposition of an artificial latticed multi-layer film having GMR characteristics.

Abstract: A planar-type magnetron sputtering apparatus capable of forming a uniform thin coating on the entire surface of a substrate having a large area is disclosed. This sputtering apparatus has an insulating target seat, a permanent magnet closed circuit unit consisting of at least two permanent magnet closed circuits, and used for applying an electric field to the target, and a closed circuit moving unit used for continuously moving the permanent magnet closed circuit unit in one direction along an elliptical track parallel to the surface of the target. Due to the movement of permanent magnet closed circuits in one direction, the magnetron discharge tracks continuously moves along the target surface in the same direction. This sputtering apparatus thus allows the target to be uniformly etched on its surface. It is thus possible to form a desired uniform thin coating on the entire surface of a substrate having a large area.

Abstract: A sputtering apparatus for forming a sputtered film on a substrate held on a substrate holder in a vacuum chamber includes a target, a deposition preventing plate provided between the target and the substrate holder, a substrate holder carrying mechanism, and a moving mechanism for moving the substrate holder carrying mechanism to change a distance between the substrate and the deposition preventing plate.

Abstract: A film forming apparatus comprises a sputtering chamber, a cooling drum disposed at an central portion thereof for cooling a roll film in contact with the surface thereof, a roll chamber, an SiOx film forming chamber and a monitor room disposed to the periphery of the drum, a sputter cathode disposed to the SiOx film forming chamber, and a moisture pump such as a cryogenic panel disposed in the film forming chamber for effectively discharging the moisture by which the partial pressure of the moisture in the film forming chamber is kept roll, in which the light absorption of the SiOx film after formation is monitored by an InSitu transmission light monitor, the value x for the SiOx is judged by the transmittance of light of the SiOx film to control the oxygen flow rate by an MFC such that the value x reaches an aimed value, thereby enabling to form an adhesion layer having sufficient adhesion and good permeability on the substrate.

Abstract: A sputtering hybrid coil for a plasma chamber in a semiconductor fabrication has an enhanced sputtering surface and an internal coolant carrying channel thermally coupled to the sputtering surface to cool the sputtering surface and the coil.

Abstract: A method and apparatus for vacuum coating plastic lens elements employs Meissner traps and a drum work holder configuration for effectively condensing water vapor in the system.

Abstract: A cooling structure and a reinforcing structure are described for use with a radio-frequency coil in an ionized physical vapor deposition apparatus. The cooling structure includes a portion for carrying coolant and is proximate to the RF coil along the outer circumference thereof. The cooling structure is shaped relative to the RF coil so that thermal expansion of the RF coil brings the RF coil into close contact with the cooling structure, thereby facilitating heat transfer from the RF coil to the coolant. The reinforcing structure is similarly shaped, and may be integrated with the cooling structure. In addition, the RF coil or cooling/reinforcing structure may be mounted to the wall of the process chamber with telescoping mounting posts, which permit the RF coil to maintain its shape while undergoing thermal expansion. The parasitic inductance of the RF coil leads is reduced by arranging those leads coaxially, thereby minimizing power losses in the RF coil.

Abstract: An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.

Abstract: The plasma processing apparatus includes a substrate table 10 that extends from a wall of the vacuum chamber 1 toward the inside of the vacuum chamber 1. A rotary holder 8, to which the substrate 5 is mounted, is arranged in a concave portion 10a that is provided in the substrate table 10. The rotary holder 8 is rotatably supported with its periphery being sealed with a sealing member 10b. Blades 9 are provided inside the rotary holder 8. A supply port 11 and a drainage port 12, for supplying and draining a fluid such that a rotation force is exerted on the blades 9, are formed in the substrate table 10. Supplying a fluid through the supply port 11 cools the substrate 5 while causing it to rotate.

Abstract: A cylindrical carriage sputtering system for disk, wafer, and flat panel substrates (20) comprising a cylindrical shaped vacuum sealed passageway formed by two concentric inner (11) and outer hollow cylinders (12), along with a top and a bottom sealing flange (13, 14). A central hollow cylinder (15), disposed between the inner (11) and outer cylinder (12), includes substrate-carrying openings and serves as a cylindrical carriage which substantially fills the sealed passageway and is rotatable in predetermined steps. Novel substrate processing devices (16) for deposition, heating, and cooling are attached around the circumference of the inner and outer cylindrical walls. Vacuum pumps are located between substrate processing devices (16). The openings in the cylindrical carriage are each fitted with thermally isolated substrate holders (19) for supporting a multiplicity of substrates (20).

Abstract: A magnetron for use in a DC magnetron sputtering reactor that can rotate at a smaller diameter during a deposition phase and at a larger diameter during a cleaning phase, whereby sputter material redeposited outside of the deposition sputtering track is removed during the cleaning phase. An embodiment for a two-diameter magnetron includes a swing arm fixed on one end to the magnetron rotation motor shaft and on the other end to a pivot shaft, pivotably coupled to the magnetron. When the magnetron is rotated in different directions, hydrodynamic forces between the magnetron and the chilling water bath cause magnetron to pivot about the pivot shaft. Two mechanical detents fix the limits of the pivoting and hence establish the two diameters of rotation.

Abstract: Current controlled power sources are disclosed that are capable of generating currents in low resistance, high temperature plasmas that are regulated to prevent the generation of excessive currents in the plasma. Current reversing switches are provided that control the flow of a direct current in a plasma chamber between various electrodes. Multiple power sources are provided in association with shunt switches for delivering a plurality of sources of direct current in various directions between electrodes in a plasma chamber. Inductive impedance can be provided in switch paths to cause a source of direct current to flow through a plasma chamber in various directions between electrodes.

Abstract: A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. In one embodiment, the backing plate includes a center post to support the backing plate during operation. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.

Abstract: A process and apparatus for depositing thin films onto a substrate. The process comprises mounting a wafer onto a wafer chuck and pumping a cryogenic fluid through the chuck which cools the wafer chuck and the wafer to a temperature below about +20° C. A thin film is then deposited over the cooled wafer using a sputter deposition process while maintaining the temperature of the wafer chuck and the wafer below about +20° C. The preferred embodiment of the present invention includes the use of liquid nitrogen as the cryogenic fluid, and copper as the material to be deposited through the sputtering process. In addition, the preferred embodiment cools the wafer chuck and the wafer to a temperature of about −100° C. The apparatus includes the physical vapor deposition vessel, the wafer chuck, the source of material to be deposited, the wafer, and the cooling line which passes through the wafer chuck to carry the cooling fluid to the chuck.

Abstract: An apparatus and method for processing a substrate in the presence of a plasma, the apparatus including: a chamber enclosing a region maintained at a low pressure; a substrate support disposed in the region and having a substantially horizontal substrate support surface for supporting a substrate; and a coil disposed in the chamber and for producing a radio frequency field within the chamber to create an ionizing plasma above the substrate support surface, the coil being disposed for maintaining a plasma having equipotential lines which extend substantially parallel to the upper surface of the substrate across substantially the entire upper surface of the substrate.

Abstract: The vacuum processing apparatus of the present invention comprises a process chamber in which predetermined processing is performed on a target object in a predetermined vacuum condition, a mount stage provided in the process chamber, for mounting thereon the target object, a shower head provided so as to oppose to the mount stage, for supplying a process gas in the process chamber, an exhaust path provided in a housing forming the process chamber, and extending so as to surround the mount stage outside the mount stage, an exhaust port formed around the mount stage, for connecting the exhaust path with the process chamber, a porous member provided at the exhaust port so as to partition the exhaust path and the process chamber from each other, and having a plurality of ventilation holes for making the exhaust path communicating with the process chamber, branching means for branching a gas flowing from the process chamber through the ventilation holes of the porous member, into a plurality of directions, such t

Abstract: The present invention generally provides a vacuum processing system with a process chamber and a rotating member, such as a magnetron in a PVD chamber, disposed in a cooling cavity of the process chamber, where the rotating member includes a deflection member for deflecting cooling fluid in the cooling cavity toward interior portions of the rotating member. In one embodiment, a base plate of the rotating member defines an upper surface of the rotating member and a magnet retainer defines a lower surface of the rotating member. Magnets are mounted between the base plate and the magnet retainer. The deflection member is mounted between the magnets and can be coupled to the magnets on one or both ends. One end of the deflection member is disposed toward the outer perimeter of the magnetron and the other end of the deflection member is disposed toward the interior portions of the rotating member.

Abstract: In a sputtering device with magnetic amplification, a magnetic field is generated by means of a permanent magnet system, whose lines of force run above and penetrate the sputtering surface, whereby the permanent magnet system is formed of two dosed, coaxial circular or oval rows (7, 8) of individual magnets (5, 5′ . . . , 6, 6′ . . . ) that are connected via a yoke (15), whereby the surface of the target (3) that faces away from the rows of permanent magnets (7, 8) is formed of two partial surfaces (3a, 3b) that form an angle to each other and whereby the edge (3c) that is formed by the two partial surfaces (3a, 3b) runs parallel to the two rows (7, 8) of permanent magnets (5, 5′ . . , 6, 6′ . . . ) and whereby an insert (14) made of ferromagnetic material is inserted between the magnetic yoke (15) and the surface of the target (3) that faces the magnetic yoke (15).

Abstract: An elongate emitter is used as a cathode to coat material onto a cylindrical workpiece by magnetron sputterinig. Where the inside surface of the workpiece is coated, the workpiece itself is used as the vacuum sputtering chamber. The overlap between the plasma field and the magnetic field creates a coating zone which is moved along the length of the workpiece to evenly coat the workpicce.

Abstract: A device for coating plate-shaped substrates by using cathode sputtering has several process chambers one after the other, each of which are bordered on the top by a chamber roof having in each case an opening. In this opening, which is covered at the top by a cathode arrangement, a frame is inserted. Screens and coolant lines of the process chamber are provided on the frame that can slide upwards out of the opening, projects into the process chamber, and is supported inside the opening of the chamber roof. A top of the cathode arrangement projects over the frame on the sides and is supported directly on the chamber roof so it seals it.

Abstract: A magnetron sputtering electrode for use within a magnetron sputtering device having more uniform cooling of the target with the use of a water chamber including water diverters to establish a turbulent water flow within the water chamber. The electrode also includes a direct power coupling to the cathode body to avoid degradation of the power supplied to the electrode. The electrode further includes introduction of process gas in an interstitial space between the anode shield and the cathode shield. The electrode also includes the use of removable shaped magnets providing improved target utilization and run times and a choice of erosion pattern and balanced or unbalanced sputtering by simple magnet substitution. In one embodiment, the invention includes the use of a threaded anode shield and a threaded cathode shield which significantly reduces the overall electrode size for a given target diameter.