Abstract: A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity.

Abstract: A load lock chamber (12) is connected in a front stage of a film forming chamber (11) through a damper and the like. A pipe to which a N2 gas and aeriform or fog-like H2O are supplied is connected to the load lock chamber (12). The pipe is led from a vaporizer (13). Inside the load lock chamber (12), a carrying section 15 on which a wafer (20) is placed is provided, whereas outside the load lock chamber (12), a cooler (14) cooling a carrying section (15) by means of liquid nitrogen is arranged. The temperature of the carrying section 15 is held at, for example, ?4° C.

Abstract: The present invention provides a heating-pressurizing jig for manufacturing a 5-layer membrane electrode assembly (MEA), in which: metal plates are formed integrally with heating plates to obviate the difficulty in increasing the temperature of the metal plates to a normal state every time when manufacturing a plurality of 5-layer MEAs; an MEA is mounted to external guides while being spaced apart from lower guides at predetermined intervals to prevent the MEA from being dried, contracted and deformed by the heated metal plates; and the lower guides and upper plate supports are elastically supported by springs, respectively, so that the external guides can respond in real time to the change in the thickness caused when upper and lower gas diffusion layers are compressed, thus preventing the MEA from being bent.

Abstract: The present invention relates to a method for depositing a coating onto a substrate. The method comprises depositing by arc evaporation; depositing by dual magnetron sputtering; said depositing being performed in sequence or simultaneously.

Abstract: A sputtering target comprising an outer target tube, an inner support tube supporting a magnet carrier extending along substantially the entire length of the inner support tube; and a water cooling circuit including at least one passageway within the inner support tube with an inlet at one end thereof adapted to receive cooling water from an external source, at least one outlet aperture at an opposite end thereof opening to a cooling chamber radially between the inner support tube and the outer target tube; and a plurality of spiral vane segments attached to an outer surface of the inner support tube.

Abstract: A dual-cathode arc plasma source is combined with a computer-controlled bias amplifier to synchronize substrate bias with the pulsed production of plasma. Accordingly, bias can be applied in a material-selective way. The principle has been applied to the synthesis metal-doped diamond-like carbon films, where the bias was applied and adjusted when the carbon plasma was condensing, and the substrate was at ground when the metal was incorporated. In doing so, excessive sputtering by too-energetic metal ions can be avoided while the sp3/sp2 ratio can be adjusted. It is shown that the resistivity of the film can be tuned by this species-selective bias. The principle can be extended to multiple-material plasma sources and complex materials.

Abstract: An aluminum interconnect metallization for an integrated circuit is controllably oxidized in a pure oxygen ambient with the optional addition of argon. It is advantageously performed as the wafer is cooled from above 300° C. occurring during aluminum sputtering to less than 100° C. allowing the aluminized wafer to be loaded into a plastic cassette. Oxidation may controllably occur in a pass-through chamber between a high-vacuum and a low-vacuum transfer chamber. The oxygen partial pressure is advantageously in the range of 0.01 to 1 Torr, preferably 0.1 to 0.5 Torr. The addition of argon to a total pressure of greater than 1 Torr promotes wafer cooling when the wafer is placed on a water-cooled pedestal. To prevent oxygen backflow into the sputter chambers, the cool down chamber is not vacuum pumped during cooling and first argon and then oxygen are pulsed into the chamber.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: An apparatus for film deposition on a continuous flexible web includes: a deposition chamber; a web-supporting drum disposed rotatably in the deposition chamber and having an outer surface for supporting the flexible web thereon; a web-conveying unit including a web-supplying roller and a web-take-up roller for conveying the continuous flexible web from the web-supplying roller onto the outer surface of the web-supporting drum and then to the web-take-up roller; and a plurality of sputtering guns disposed around the outer surface of the web-supporting drum for depositing a film on the first surface of the flexible web on the outer surface of the web-supporting drum.

Abstract: The present invention relates to a method for producing an anti-reflection and/or passivation coating for solar cells. The method may include the steps of providing a silicon wafer in a deposition chamber, pre-heating said silicon wafer to a temperature above 400° C. and deposition of a hydrogen containing anti-reflection and/or passivation coating by a sputter process. A coating apparatus is also provided for producing solar cells, especially anti-reflection and/or passivation coatings on Si wafers, comprising a first vacuum chamber, a second vacuum chamber and conveying means for transporting a substrate through said first and second vacuum chambers. The first vacuum chamber comprising at least one infrared radiation heater with a heater filament that has a temperature between 1800° C. and 3000° C. The second vacuum chamber comprising sputter means for vaporization of a target as well as a gas inlet for introducing a reactive gas including hydrogen.

Abstract: The invention provides a sputtering method that involves exposing a surface of a target support to a flow of a target material, such that the exposing results in condensing the target material on the surface of the target support in a first position and sputtering the condensed target material from the surface of the target support in a second position to a substrate, wherein the surface of the target support in the second position is not exposed to the flow of the evaporated target material during the sputtering. A sputtering target unit also provided. The sputtering method and the sputtering target unit allow performing a high rate sputtering of poor thermal conductors.

Abstract: To provide a vacuum treatment device capable of reducing the occurrence of the tilt and deformation of treated materials by suppressing the heating of a substrate by continuous spattering in a vacuum.

Abstract: The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coating chamber along a coating line by a single person in a short time. Further, it is possible to separate the energy connection module from a coating chamber for maintenance or displacement purposes without mechanically demounting all connections.

Abstract: A supply end block to supply a sputter cathode with a coolant and electrical voltage, includes a housing with a coolant connection and a current connection as well as a support shaft mounted to rotate, on which a target tube is fastened. The coolant connection and current connection are brought together directly at a feed site so that the coolant is brought to the potential of the applied electric voltage on entering the housing of the end block. Optimal cooling of the current feed is achieved, and optimal potential equalization of the coolant simultaneously occurs.

Abstract: A cathode for a vacuum sputtering processing machine includes a target plate mounted on a support having a cooler. The support is secured to a frame delimiting a closed space for positioning and centering the target. The frame peripherally has a profiled catching rim configured to collaborate with a set of independent gripping elements having complementary catching shapes configured to allow an effect of tilting of the elements resulting from a clamping action exerted on members engaged in a thickness of the elements, and bearing against a part of the catching rim of the frame, so that, under the tilting effect, a part of the catching shapes of the set of gripping elements bears facially against a peripheral edge of the target plate to secure the target plate.

Abstract: The present invention is to provide a sputtering apparatus and a thin film formation method which make it possible to form respective layers of a multilayer film having a clean interface at a optimum temperature, or which make it possible to continuously carry out the film formation and the surface processing. Another object of this invention is to provide a small sputtering apparatus for forming a multilayer film as compared with prior art apparatus. A sputtering apparatus of this invention comprises a main shaft around which at least one target and at least one surface processing mechanism are installed, a substrate holder holding a substrate or a plurality of substrates arranged facing the target and the surface processing mechanism, and a rotation mechanism to rotate the main shaft or the substrate holder.

Abstract: A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substrate with a source of metal vapor between them, made up of an electrode to form a plasma (6) with the substrate or a separate electrically conducting element as a counter-electrode. The deposition metal is introduced in the liquid state in a retention tank (8) and is maintained as a liquid at an essentially constant level during the formation of the metal layer on the substrate. An Independent claim is included for the device used to put this method of coating a substrate into service.

Abstract: The present invention provides a film deposition system capable of effectively cooling a work having a large volume, and a film deposition method using this system. The film deposition system has, within a vacuum chamber 1, an evaporation source 3 for forming a film on a work 2 and a cooling device 4 for cooling the work 2, characterized in that the work 2 has an internal space 15 communicating with the outside through an opening part 14, and the cooling device 4 is insertable to and drawable from the internal space 15 through the opening part 14 of the work 2 to cool the work 2 from the inside.

Abstract: A sweeping linear magnetron is described. The magnetron has a cathode backing plate, a drive housing attached to the cathode backing plate and a motor held in the drive housing. The motor drives a yoke positioned within a cut-out in the backing plate. The yoke has a magnet pack attached thereto said yoke such that the magnet pack is adapted to being moved over a target material and wherein the target material is being sputtered within a vacuum chamber onto a substrate.

Abstract: A sputtering cathode assembly attachable to a cathode mounting plate for a thin-film vapor deposition chamber. The cathode assembly includes a magnet module and a cathode body generally coextensive with and sealingly housing the magnet module and defining a water channel between a top plate of the cathode body and a cooling channel plate of the magnet module. An elongated target is releasably connected atop and coextensive with the top plate and secured in place by a unique threaded fastener engagement between a target clamp and an edge portion of the cathode body whereby the target is replaceable without disassembly of the cathode body. Unique replaceable elongated fastener receiving inserts releasably secure said target against the target plate to effect target replacement without disassembly of the cathode body.

Abstract: Provided is a plasma processing method for generating microplasma in a space of a microplasma source arranged in the vicinity of an object to be processed by supplying gas to the space and supplying electric power to a member located in the vicinity of the space, making activated particles emitted from an opening of the microplasma source joined to the space act on the object, and forming a fine linear portion on the object. The fine linear portion is formed on the object while flowing the gas to the neighborhood of the opening along the lengthwise direction of the fine linear portion parallel to the object.

Abstract: Described is a cooling system for use in the manufacture of substrates into magnetic disk memory in which cooling plates are positioned dynamically in relation to a substrate to be cooled. This enables positioning the cooling plates closer for more effective cooling. Positioning is controlled by capacitive measurements between the cooling plates and the substrate to be cooled.

Abstract: The present invention provides a temperature controlled energy transparent window or electrode used to advantage in a substrate processing system. The invention also provides methods associated with controlling lid temperature during processing and for controlling etching processes. In a preferred embodiment the invention provides a fluid supply system for the lid which allows the fluid to flow through a feedthrough and into and out of a channel formed in the window or electrode. The fluid supply system may also mount the window or electrode to a retaining ring which secures the window or electrode to the chamber. In another aspect the invention provides a bonded window or electrode having a first and second plate having a channel formed in the plates so that when the plates are bonded together they form a channel therein through which a temperature controlling fluid can be flowed. An external control system preferably regulates the temperature of the fluid.

Abstract: A chuck body mounts a substrate within a vacuum chamber. Contiguous portions of the substrate and the chuck body form a heat-transfer interface. An intermediate sealing structure seals the chuck body to the substrate independently of any contact between the chuck body and the substrate and forms a separately pressurizable region within the vacuum chamber. A control system promotes flows of fluid through a periphery of the heat-transfer interface within the separately pressurizable region for controlling fluid pressures and related transfers of heat at the heat-transfer interface according to an overall aim of regulating the substrate temperature.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: An in-line sputtering system for depositing a thin film on a substrate includes a buffer heating module, an entry transfer module adjacent to the buffer heating module and having an expedited conveyor device for moving the substrate therein and a first sputtering module for depositing the thin film on the substrate, which is adjacent to the entry transfer module. The entry transfer module serves as a buffer zone which mitigates fluctuations in temperature and pressure in the first sputtering module when the substrate is unloaded from the buffer heating module. The substrate in the entry transfer module is moved by the expedited conveyor device at a speed greater than that in the first sputtering module.

Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fi

Abstract: Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.

Abstract: The invention relates to an arc source or a source for vaporizing or sputtering of materials and a method for operating a source. The source comprises an insulated counter-electrode and/or an AC magnet system. Thereby, dependent on the requirement, any desired potential can be applied to the counter-electrode and/or the source can be operated with different magnet systems, in particular as arc or sputter source.

Abstract: The invention concerns a device and a method for coating and/or surface modification of objects in a vacuum using a plasma, where there is the possibility of coating or modifying variform objects on all sides without a large expense for plant or process engineering being necessary. In accordance with the invention, a box structure (1) of an electrically conductive material that forms a vacuum chamber or can be inserted into a vacuum chamber is used. Objects (2) can be introduced into the box structure to at least one closable opening (8) at a distance from the inner wall. In addition, there are at least one opening (3) for supply and at least one opening (4) for removal of the operating gas as well as one opening (6,6?) for introduction of energy for generation of a glow discharge and the box structure (1) has a potential that is electrically negative with respect to the plasma generated by the glow discharge.

Abstract: A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium/titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.

Abstract: An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.

Abstract: To generate an especially good heat transfer between a seating face of a storage plate support and a storage plate, during coating with a sputter source in a vacuum installation, the seating face of the storage plate support is slightly annularly convexly arched and the storage plate is clamped in the center as well as on its outer margin by a center mask and an outer mask against the arched seating face. Hereby an especially good heat transfer is attained with very low arching d, whereby the storage plate is treated gently and simultaneously, during the coating process, no layer thickness distribution problems occur through arching that is too large.

Abstract: An apparatus and method for fabricating a carbon thin film are disclosed in the present invention. The apparatus includes a vacuum chamber having a substrate mounted therein, a sputter target inside the vacuum chamber facing into the substrate, a cesium supplying unit inside the vacuum chamber in a shape of a shield to a circumference of the target and supplying cesium vapor onto a surface of the sputter target through a plurality of openings, and a heating wire surrounding the cesium supplying unit and maintaining the cesium supplying unit at a constant pressure.

Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

Abstract: A cylindrical magnetron capable of running at high current and voltage levels with a target tube that is self cleaning not only in the center portion, but also at the ends. Sputtering the ends of the target tube virtually eliminates accumulation of condensate at the ends and any resultant arcing, resulting in a more reliable magnetron requiring less service and a magnetron that produces more consistent coatings.

Abstract: A plasma-enhanced coaxial magnetron sputter-cleaning and coating assembly for sputter-cleaning and coating the interior surfaces of a cylindrical workpiece is provided. The apparatus sputter-coats the workpiece using a cylindrical sputtering material, the material having an interior and an exterior. The apparatus includes a core cooling system surrounded by a ring magnet assembly including a plurality of axially aligned ring magnets, with the core cooling system and the ring magnet assembly axially aligned with, and residing in the interior of, the cylindrical sputtering material. A cylindrical-shaped filament circumferentially surrounds the exterior of the cylindrical sputtering material. An anode comprised of a wire screen circumferentially surrounds, and is external to the filament; whereby the apparatus for plasma-enhanced coaxial magnetron sputter-cleaning and coating may be housed inside the workpiece in order to sputter-clean and coat the interior of the workpiece.

Abstract: A source of sputtered deposition material has, in one embodiment, a torus-shaped plasma generation area in which a plasma operates to sputter the interior surface of a toroidal cathode. In one embodiment, the sputtered deposition material passes to the exterior of the source through apertures provided in the cathode itself. A torus-shaped magnetic field generated in the torus-shaped plasma facilitates plasma generation, sputtering of the cathode and ionization of the sputtered material by the plasma.

Abstract: The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed from a heat-resistant material, which completely surrounds the sputtering cathode and the object to be coated, at a small spacing, and which has at least one opening to let a gas in and at least one opening to let a gas out.

Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

Abstract: An AC/DC cylindrical magnetron with a drive system that absorbs large variations in the rotation of the target tube, an efficient high capacity electrical transfer system, and improved electrical isolation.

Abstract: A target for physical vapor deposition (PVD) and methods for depositing nonmagnetic materials are described. Power is introduced into the chamber through the target to produce plasma. The planar magnetron system is chosen for its high deposition rates. Since the permanent magnets are behind the target in traditional system, the magnetic target interferes with the required magnetic fields on the target. To eliminate this problem, permanent magnets are arranged on the target surface. Strong magnetic fields on the target can now be maintained for high deposition rates. The permanent magnets may be covered by a relatively thin, suitable protective film or by a film of the same material as the target.

Abstract: A plasma-enhanced coaxial magnetron sputter-cleaning and coating assembly for sputter-cleaning and coating the interior surfaces of a cylindrical workpiece is provided. The apparatus sputter-coats the workpiece using a cylindrical sputtering material, the material having an interior and an exterior. The apparatus includes a core cooling system surrounded by a ring magnet assembly including a plurality of axially aligned ring magnets, with the core cooling system and the ring magnet assembly axially aligned with, and residing in the interior of, the cylindrical sputtering material. A cylindrical-shaped filament circumferentially surrounds the exterior of the cylindrical sputtering material. An anode comprised of a wire screen circumferentially surrounds, and is external to the filament; whereby the apparatus for plasma-enhanced coaxial magnetron sputter-cleaning and coating may be housed inside the workpiece in order to sputter-clean and coat the interior of the workpiece.

Abstract: An apparatus and method for cathodic magnetron sputtering of a coating onto a temperature-sensitive substrate is disclosed. The apparatus consists of a vacuum chamber having a work-supporting station and a magnetron sputtering target opposite the work-supporting station. The apparatus produces a magnetic field to contain, in an oval pattern, a gas plasma cloud which ejects target material toward the work-supporting station. The temperature of the substrate being coated is controlled by positioning the cooling anode within the sputtering chamber. The position of the cooling anode is adjusted relative to the cathode target to capture primary electrons that would otherwise impinge the substrate. It is in a position with respect to the cathode that does not interfere with the magnetic field.

Abstract: A sputtering apparatus is provided with a cathode assembly formed of a cathode unit having a moveable magnet assembly and a cooling water source therein, and a removable target assembly that includes a replaceable target unit and a removable and preferably reusable cooling jacket that seals to the rear face of the target unit and encloses a cooling cavity therebetween. Ducts are configured to automatically disconnect and reconnect the cooling cavity to the water source when the target assembly is removed from and reconnected in the cathode assembly. The target unit includes a volume of sputtering material on which is a front sputtering face, and has a recessed rim surrounding the sputtering face. The rim is configured to form a vacuum seal to the wall of a sputtering chamber and a water seal to the cooling jacket. Thereby, the magnet assembly is isolated from contact with the cooling liquid.

Abstract: The present invention discloses devices and a method of fabrication of devices using a shape memory effect, thin film with a compositional gradient through the thickness of the film. Specifically, a NiTi SME thin film is disclosed that can be used in actuators, MEMS devices and flow control. The process of fabrication includes a gradual heating of the target over time during the sputter deposition of a thin film on a substrate under high vacuum, without compositional modification. The resulting thin film exhibits two-way shape memory effect that can be cyclically applied without an external bias force.

Abstract: A method of depositing thin films comprising Ti and TiN within vias and trenches having high aspect ratio openings. The Ti and TiN layers are formed on an integrated circuit substrate using a Ti target in a non-nitrided mode in a hollow cathode magnetron apparatus in combination with controlling the deposition temperatures by integrating cooling steps into the Ti/TiN deposition processes to modulate the via and contact resistance. The Ti and TiN layers are deposited within a single deposition chamber, without the use of a collimator or a shutter.

Abstract: A semiconductor manufacturing device having a buffer unit which receives a substrate treating substance from an external source, stores it therein, and delivers it to an external unit.

Abstract: A magnetron sputtering cathode (21) having a simplified design provides excellent target (56) utilization. The magnet design contains three or four magnet sets (50, 52, 54). These magnets (50, 5254) are behind a heat shield capable of removing about 500 watts per square unit, such as inches. All the magnet sets (50, 52, 54) have magnetic orientations substantially perpendicular to the magnet base plate. The magnetic orientation of the center magnet (50) is north up; the second magnet array is south up (52); the third magnet set is south up (54); and the fourth magnet set, it used, is north up. The magnet arrays are easier to assemble and repair and produce a target utilization of at least 30 percent and preferably 40 percent or higher.

Abstract: Apparatus and method for cooling a magnetron sputtering apparatus. More particularly, a system including a stationary conduit, a hollow drive shaft rotatably coupled to the stationary conduit, and a magnetron coupled to the hollow drive shaft.