Specified Mask, Shield Or Shutter Patents (Class 204/298.11)
  • Patent number: 10727033
    Abstract: A collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.
    Type: Grant
    Filed: May 30, 2019
    Date of Patent: July 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Martin Lee Riker, Fuhong Zhang, Anthony Infante, Zheng Wang
  • Patent number: 10629470
    Abstract: A method for producing an elastic wave device includes steps of (a) preparing a first substrate and a second substrate, (b) irradiating a bonding surface of the first substrate and a bonding surface of the second substrate with one of plasma, neutral atom beams, and ion beams of an inert gas, (c) bonding the bonding surface of the first substrate and the bonding surface of the second substrate in a vacuum at room temperature so as to set a strength that allows the first and second substrates to be separated by insertion of a blade; (d) forming a composite substrate by bonding a piezoelectric substrate to another surface of the first substrate; (e) forming electrode on a surface of the piezoelectric substrate of the composite substrate; and then (f) removing the second substrate from the first substrate by separation with the blade.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: April 21, 2020
    Assignee: NGK INSULATORS, LTD.
    Inventors: Ryosuke Hattori, Yuji Hori, Tomoyoshi Tai
  • Patent number: 10604835
    Abstract: A macroparticle filter device for cathodic arc evaporation, to be placed between at least one arc evaporation source and at least one substrate exhibiting at least a surface to be coated with material evaporated from a cathode of the arc evaporation source in a vacuum coating chamber. The macroparticle filter device includes one or more filter components that can prevent macroparticles emitted by the cathode during cathodic arc evaporation to arrive the substrate surface to be coated. The at least one component is provided as one or more flexible sheets that block the lineal way of the macroparticles from the cathode to the substrate surface to be coated. Further a method for utilizing the macroparticle filter device is presented.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: March 31, 2020
    Assignee: OERLIKON SURFACE SOLUTIONS AG, PFÄFFIKON
    Inventors: Juergen Ramm, Beno Widrig, Richard Rachbauer
  • Patent number: 10597766
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: March 24, 2020
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Katsunari Obata, Toshihiko Takeda, Hiroshi Kawasaki, Hiroyuki Nishimura, Atsushi Maki, Hiromitsu Ochiai, Yoshinori Hirobe
  • Patent number: 10590535
    Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: March 17, 2020
    Assignee: ASM IP Holdings B.V.
    Inventor: Robert Huggare
  • Patent number: 10347474
    Abstract: In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: July 9, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Martin Lee Riker, Fuhong Zhang, Anthony Infante, Zheng Wang
  • Patent number: 10315387
    Abstract: The present invention relates to tungsten-rhenium coated compounds, materials formed from tungsten-rhenium coated compounds, and to methods of forming the same. In embodiments, tungsten and rhenium are coated on ultra hard material particles to form coated ultra hard material particles, and the coated ultra hard material particles are sintered at high temperature and high pressure.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: June 11, 2019
    Assignee: SMITH INTERNATIONAL, INC.
    Inventors: Yahua Bao, Scott L. Horman
  • Patent number: 10167544
    Abstract: There are provided a vapor deposition mask capable of satisfying both high definition and lightweight in upsizing and forming a vapor deposition pattern with high definition while securing strength, a vapor deposition mask preparation body capable of simply producing the vapor deposition mask and a method for producing a vapor deposition mask, and furthermore, a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition. A metal mask 10 in which a slit 15 is provided and a resin mask 20 in which openings 25 corresponding to a pattern to be produced by vapor deposition are provided at a position of overlapping with the slit 15 are stacked, and the metal mask 10 has a general region 10a in which the slit 15 is provided and a thick region 10b larger in thickness than the general region.
    Type: Grant
    Filed: March 24, 2014
    Date of Patent: January 1, 2019
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Katsunari Obata, Toshihiko Takeda, Hiroshi Kawasaki, Hiroyuki Nishimura, Atsushi Maki, Hiromitsu Ochiai, Yoshinori Hirobe
  • Patent number: 10062551
    Abstract: A sputtering apparatus includes a chamber, a substrate holder, first to fourth target holders, a shutter unit, and a gate valve through which the substrate is conveyed. The first to fourth target holders are arranged on vertices of a virtual rectangle having long sides and short sides and inscribed in a virtual circle centered on the axis, the first target holder and the second target holder are respectively arranged on two vertices defining one short side of the virtual rectangle, and a distance to the gate valve is shorter than distances from the third target holder and the fourth target holder to the gate valve.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: August 28, 2018
    Assignee: CANON ANELVA CORPORATION
    Inventors: Shigenori Ishihara, Kazuya Konaga, Hiroyuki Toya, Shintaro Suda, Yasushi Yasumatsu, Yuu Fujimoto, Toshikazu Nakazawa, Eiji Nakamura, Shin Imai
  • Patent number: 10008372
    Abstract: A film deposition apparatus, comprising: a deposition preventive plate which is located in a processing chamber performing film deposition processing on a substrate so as to surround a processing region in the processing chamber for processing on the substrate, and which prevents a film deposition material from being attached to an inner wall of the processing chamber, wherein the deposition preventive plate is configured by arranging a plurality of component plates of which respective end portions are overlapped with each other at a gap, such that a thermal expansion generated due to the film deposition processing is absorbed by a relative movement of an overlapped part in two adjacent component plates of the plurality of component plates in a width direction of the overlapped part, and a concave part is provided at the overlapped part to make the gap provided in a side communicating with the processing region be larger than that provided in the other side, thin parts provided in the respective end portions
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: June 26, 2018
    Assignee: Sakai Display Products Corporation
    Inventors: Hirokazu Imahara, Yasuhiro Wakamori
  • Patent number: 9997339
    Abstract: A sputtering apparatus includes a shutter unit, a plurality of target holders, and a substrate holder which can rotate about an axis perpendicular to a surface on which a substrate is held. The shutter unit includes a first shutter having first and second apertures and a second shutter having third and fourth apertures. The plurality of target holders are arranged on a first virtual circle centered on the axis, with the arrangement intervals between the plurality of target holders on the first virtual circle including at least two types of arrangement intervals.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: June 12, 2018
    Assignee: CANON ANELVA CORPORATION
    Inventors: Shigenori Ishihara, Hiroyuki Toya, Yasushi Yasumatsu, Toshikazu Nakazawa, Eiji Nakamura, Shintaro Suda, Shin Imai, Yuu Fujimoto
  • Patent number: 9978570
    Abstract: A reaction chamber and a semiconductor processing device, comprise a Faraday shielding ring (21) made of a magnetic insulation material and an insulating ring (22) made of an insulating material; the Faraday shielding ring (21) is provided with a slot thereon passing through a ring surface thereof in an axial direction; both the Faraday shielding ring (21) and the insulating ring (22) are disposed in the reaction chamber surrounding an inner peripheral wall of the reaction chamber, and the Faraday shielding ring (21) is stacked on the insulating ring (22) in a vertical direction. A shielding ring (211) is disposed surrounding an inner peripheral wall of the insulating ring (22), the shielding ring (211) is connected to an area of a lower surface of the Faraday shielding ring (21) adjacent to a center of the reaction chamber, and the shielding ring (211) is made of a magnetic insulation material and provided with a slot thereon passing through a ring surface thereof in an axis direction.
    Type: Grant
    Filed: November 27, 2014
    Date of Patent: May 22, 2018
    Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT
    Inventors: Yanzhao Zhang, Qing She, Peng Chen
  • Patent number: 9852906
    Abstract: It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region using an oxide semiconductor layer, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment for reducing impurities such as moisture (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer.
    Type: Grant
    Filed: November 18, 2013
    Date of Patent: December 26, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshinari Sasaki, Junichiro Sakata, Hiroki Ohara, Shunpei Yamazaki
  • Patent number: 9809876
    Abstract: An endblock for a rotatable sputtering target, such as a rotatable magnetron sputtering target, is provided. A sputtering apparatus, including one or more such endblock(s), includes locating the electrical contact(s) (e.g., brush(es)) between the collector and rotor in the endblock(s) in an area under vacuum (as opposed to in an area at atmospheric pressure).
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: November 7, 2017
    Assignee: Centre Luxembourgeois de Recherches pour le Verre et la Ceramique (C.R.V.C.) SaRL
    Inventors: Gilbert Galan, Jean-Philippe Uselding, Guy Comans, Marcel Schloremberg
  • Patent number: 9705070
    Abstract: In order to obtain a ferroelectric thin film that is formed to have a predetermined thickness on a substrate, that have satisfactory crystallization and that achieves a high piezoelectric property, a method of manufacturing such a ferroelectric thin film and a method of manufacturing a piezoelectric element having such a ferroelectric thin film, when a dielectric material of a perovskite structure is formed into a film on the substrate, a predetermined amount of additive is mixed with PZT, and the concentration of the additive mixed is varied in the thickness direction of the thin film.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: July 11, 2017
    Assignee: KONICA MINOLTA, INC.
    Inventor: Kenji Mawatari
  • Patent number: 9611539
    Abstract: Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.
    Type: Grant
    Filed: January 25, 2013
    Date of Patent: April 4, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zhenbin Ge, Alan Ritchie, Adolph Miller Allen
  • Patent number: 9567666
    Abstract: Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: February 14, 2017
    Assignee: Guardian Industries Corp
    Inventors: Alexey Krasnov, Willem den Boer, R. Glenn Stinson
  • Patent number: 9543126
    Abstract: Embodiments of collimators for use in substrate processing chambers are provided herein. In some embodiments, a collimator includes: a body having a central region, a peripheral region, and a transitional region disposed between the central and peripheral regions; a first plurality of apertures in the central region having a first aspect ratio; a second plurality of apertures in the peripheral region having a second aspect ratio less than the first aspect ratio; and a third plurality of apertures in the transitional region, wherein the third plurality of apertures are cut so the transitional region forms a conical shape surrounding the central region.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: January 10, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Martin Lee Riker
  • Patent number: 9502223
    Abstract: A sputtering apparatus includes a backing plate, a fixing portion, and a shield surrounding the periphery of a target and having an opening. The fixing portion fixes the target to the backing plate by pressing the peripheral portion of the target against the backing plate. The shield includes a facing portion facing the backing plate without the fixing portion intervening between them, and an outer portion formed outside the facing portion. The gap between the facing portion and the backing plate is smaller than the gap between the outer portion and the backing plate. The inner surface of the shield, which faces a processing space, includes a portion which inclines such that the distance between the inner surface and the backing plate decreases from the outer portion to the facing portion.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: November 22, 2016
    Assignee: CANON ANELVA CORPORATION
    Inventor: Shigenori Ishihara
  • Patent number: 9472384
    Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
    Type: Grant
    Filed: June 29, 2015
    Date of Patent: October 18, 2016
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
  • Patent number: 9458533
    Abstract: The invention relates to a method and a device for the coating of running substrates (25) moving along a run direction through a treatment zone (6), in which the vapor of a coating material is generated in a chamber (5), this vapor passing through a treatment aperture towards the treatment zone (6) where the coating material condenses on the surface of the substrates (25). The vapor flow through the treatment aperture is controlled by adjusting the extent to which the treatment aperture is shut off by at least one shutter (13), between an open position, in which said vapor flows through the treatment aperture towards the treatment zone (6), and a closed position, in which the vapor is prevented from flowing towards the treatment zone (6) through the treatment aperture.
    Type: Grant
    Filed: December 22, 2008
    Date of Patent: October 4, 2016
    Assignee: ADVANCED GALVANISATION AG
    Inventor: Pierre Vanden Brande
  • Patent number: 9382167
    Abstract: An energetic composite having a plurality of reactive particles each having a reactive multilayer construction formed by successively depositing reactive layers on a rod-shaped substrate having a longitudinal axis, dividing the reactive-layer-deposited rod-shaped substrate into a plurality of substantially uniform longitudinal segments, and removing the rod-shaped substrate from the longitudinal segments, so that the reactive particles have a controlled, substantially uniform, cylindrically curved or otherwise rod-contoured geometry which facilitates handling and improves its packing fraction, while the reactant multilayer construction controls the stability, reactivity and energy density of the energetic composite.
    Type: Grant
    Filed: March 25, 2013
    Date of Patent: July 5, 2016
    Assignee: THE JOHNS HOPKINS UNIVERSITY
    Inventors: Gregory M. Fritz, Timothy P. Weihs, Justin A. Grzyb
  • Patent number: 9368331
    Abstract: The present invention provides a highly efficient magnetron sputtering apparatus in which a ground shield made of a magnetic material is disposed on the outer circumference of a target, the sputtering apparatus being capable of reducing unintended discharge between a cathode and the ground shield. The sputtering apparatus according to an embodiment includes: a backing plate connected to a power supply and having a target mounting surface; a magnet disposed on the back surface of the backing plate; a grounded shield containing a magnetic material and surrounding the target mounting surface; and a fixation part located between the shield and the backing plate at an outer circumference of the target mounting surface and serving as a magnetic member. This structure reduces magnetic field lines which pass through a space between the shield and the fixation part.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 14, 2016
    Assignee: Canon Anelva Corporation
    Inventors: Masato Shinada, Keisuke Ueda
  • Patent number: 9157144
    Abstract: It comprises a mask (11) having a first, a second and a third action edge (11a, 11b, 11c), and a drive means for moving the mask (11) relative to a substrate (12) in a uniaxial direction (A) whereby moving the mask at a fixed rate of movement to cause the edges to successively act on an identical substrate region while successively applying different materials thereto forms thin films of three components successively with respective film thickness gradients oriented in three different directions mutually angularly spaced apart by an angle of 120° to allow these films to overlap, thereby forming a ternary phase diagrammatic thin film 13.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: October 13, 2015
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideomi Koinuma, Yukio Yamamoto, Yuji Matsumoto, Ryota Takahashi
  • Patent number: 9109285
    Abstract: An apparatus includes a plurality of target electrodes having attachment surfaces, a substrate holder, a first shutter member provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, a first separating portion disposed between the openings of the first shutter member on its surface of the target electrode side, and a second separating portion disposed between the first shutter member and the target electrodes. The first shutter member is driven so as to bring the first separating portion and the second separating portion toward each other so that an indirect path can be formed between the first separating portion and the second separating portion, and driven so as to bring the first separating portion and the second separating portion away from each other so that the first shutter plate can be rotated.
    Type: Grant
    Filed: December 16, 2013
    Date of Patent: August 18, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Yuji Kajihara, Yasushi Yasumatsu, Kazuya Konaga
  • Patent number: 9109283
    Abstract: A structure of reaction chamber of semiconductor sputtering equipment is disclosed, including a chamber case, an elevation platform, a plurality of target fixing elements, a carrier ring and a covering protective ring, wherein the contact surface of the target fixing element, the ring-shaped protruding surface of the carrier ring and the attachment surface of the covering protective ring are all coarse surfaces with uneven patterns. As such, during sputtering, the contact surface, ring-shaped protruding surface and attachment surface can withstand the deposition thickening and extend the cycle of cleaning components and life span so as to improve utilization rate of the equipment and reduce the manufacturing cost.
    Type: Grant
    Filed: February 26, 2013
    Date of Patent: August 18, 2015
    Assignee: SHIH HER TECHNOLOGIES INC.
    Inventors: Wen-Chin Ho, Tsung-Chih Chou, Shyue-Jer Chern
  • Patent number: 9090974
    Abstract: An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: July 28, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo
  • Patent number: 9062379
    Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.
    Type: Grant
    Filed: June 15, 2012
    Date of Patent: June 23, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Martin Lee Riker, Keith A. Miller, Anantha Subramani
  • Patent number: 9062372
    Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: June 23, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Praburam Gopalraja, Jianming Fu, Xianmin Tang, John C. Forster, Umesh Kelkar
  • Patent number: 9034152
    Abstract: A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
    Type: Grant
    Filed: December 2, 2011
    Date of Patent: May 19, 2015
    Assignee: CANON ANELVA CORPORATION
    Inventors: Nobuo Yamaguchi, Kazuaki Matsuo, Susumu Akiyama, Satoshi Uchino, Yoshimitsu Shimane
  • Patent number: 9034156
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: May 19, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Publication number: 20150129414
    Abstract: A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 ?m.
    Type: Application
    Filed: November 14, 2013
    Publication date: May 14, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Wei BIH, Wei-Jen CHEN, Yen-Yu CHEN, Hsien-Chieh HSIAO, Chang-Sheng LEE, Wei-Chen LIAO, Wei ZHANG
  • Patent number: 9017526
    Abstract: The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.
    Type: Grant
    Filed: July 8, 2013
    Date of Patent: April 28, 2015
    Assignee: Lam Research Corporation
    Inventors: Harmeet Singh, Alex Paterson
  • Patent number: 9017534
    Abstract: Disclosed is a vacuum deposition apparatus which suppresses mutual interference of magnetic fields generated by multiple magnetic-field applying mechanisms for evaporation sources. The vacuum deposition apparatus includes a deposition chamber; a magnetic-field applying mechanism of sputtering evaporation source disposed in the deposition chamber; a magnetic-field applying mechanism of arc evaporation source disposed in the same deposition chamber; and magnetic-field shielding units arranged so as to cover partially or entirely at least one of these magnetic-field applying mechanisms for evaporation sources (preferably the magnetic-field applying mechanism of sputtering evaporation source). Portions (portions to face a target material upon dosing) of openable units of magnetic-field shielding units are preferably made from a non-magnetic material.
    Type: Grant
    Filed: July 6, 2012
    Date of Patent: April 28, 2015
    Assignee: Kobe Steel, Ltd.
    Inventors: Kenji Yamamoto, Satoshi Hirota
  • Patent number: 8999121
    Abstract: The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: April 7, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Kyosuke Sugi, Tetsuya Endo, Einstein Noel Abarra
  • Patent number: 8992749
    Abstract: Provided is a sputtering apparatus which deposits a metal catalyst on an amorphous silicon layer at an extremely low concentration in order to crystallize amorphous silicon, and particularly minimizes non-uniformity of the metal catalyst caused by a pre-sputtering process without reducing process efficiency. This sputtering apparatus improves the uniformity of the metal catalyst deposited on the amorphous silicon layer at an extremely low concentration. The sputtering apparatus includes a process chamber having first and second regions, a metal target located inside the process chamber, a target transfer unit moving the metal target and having a first shield for controlling a traveling direction of a metal catalyst discharged from the metal target, and a substrate holder disposed in the second region to be capable of facing the metal target.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: March 31, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Tae-Hoon Yang, Ki-Yong Lee, Jin-Wook Seo, Byoung-Keon Park, Yun-Mo Chung, Dong-Hyun Lee, Kil-Won Lee, Jae-Wan Jung, Jong-Ryuk Park, Bo-Kyung Choi, Won-Bong Baek, Byung-Soo So, Jong-Won Hong, Min-Jae Jeong, Heung-Yeol Na, Ivan Maidanchuk, Eu-Gene Kang, Seok-Rak Chang
  • Patent number: 8986522
    Abstract: A wafer holder including a wafer stage and a wafer stage outer-ring surrounding the wafer stage wherein the wafer stage has a diameter smaller than the diameter of a wafer loaded on the wafer stage, the wafer stage outer-ring has an inner diameter at the upper side of the outer-ring which is larger than the diameter of the wafer loaded on the wafer stage, and the upper surface of the outer-ring lies above the upper surface of the wafer loaded on the wafer stage.
    Type: Grant
    Filed: June 27, 2011
    Date of Patent: March 24, 2015
    Assignee: Canon Anelva Corporation
    Inventor: Sunil Wickramanayaka
  • Publication number: 20150075980
    Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 2:1 to about 1.6:1.
    Type: Application
    Filed: September 15, 2014
    Publication date: March 19, 2015
    Inventors: THANH NGUYEN, RONGJUN WANG, MUHAMMAD M. RASHEED, XIANMIN TANG
  • Publication number: 20150075979
    Abstract: There is described an intaglio printing plate coating apparatus (1) comprising a vacuum chamber (3) having an inner space (30) adapted to receive at least one intaglio printing plate (10) to be coated, a vacuum system (4) coupled to the vacuum chamber (3) adapted to create vacuum in the inner space (30) of the vacuum chamber (3), and a physical vapour deposition (PVD) system (5) adapted to perform deposition of wear-resistant coating material under vacuum onto an engraved surface (10a) of the intaglio printing plate (10), which physical vapour deposition system (5) includes at least one coating material target (51, 52) comprising a source of the wear-resistant coating material to be deposited onto the 32 engraved surface (10a) of the intaglio printing plate (10).
    Type: Application
    Filed: April 12, 2013
    Publication date: March 19, 2015
    Inventors: François Gremion, Laurent Claude
  • Publication number: 20150075981
    Abstract: The present invention relates to a rotating magnetron sputtering target and a corresponding magnetron sputtering device. The rotating magnetron sputtering target comprises a cylindrical target, a pole shoe and a plurality of magnetrons. The magnetron comprises a first magnetic pole arranged on a central portion thereof and two second magnetic poles arranged on both sides thereof, and the first and the second magnetic poles have opposite polarities. The rotating magnetron sputtering target and the corresponding magnetron sputtering device of the present invention improve the plasma density within a coating region, so that it forms a film with better quality and better uniformity.
    Type: Application
    Filed: June 14, 2012
    Publication date: March 19, 2015
    Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO. LTD.
    Inventor: Hao Kuo
  • Publication number: 20150068887
    Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element includes intermittently exposing a surface of a base substrate to sputter particles from a sputter target, and thereby forming a thin film on the base substrate.
    Type: Application
    Filed: January 16, 2014
    Publication date: March 12, 2015
    Inventors: Makoto NAGAMINE, Youngmin EEH, Koji UEDA, Daisuke WATANABE, Kazuya SAWADA, Toshihiko NAGASE
  • Patent number: 8974648
    Abstract: The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: March 10, 2015
    Assignee: Canon Anelva Corporation
    Inventors: Yuichi Otani, Takashi Nakagawa
  • Patent number: 8973526
    Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.
    Type: Grant
    Filed: December 10, 2007
    Date of Patent: March 10, 2015
    Assignee: Korea Institute of Science and Technology
    Inventors: Wook Seong Lee, Young Joon BaiK, Jong-Keuk Park, Gyu Weon Hwang, Jeung-hyun Jeong
  • Patent number: 8974649
    Abstract: In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition.
    Type: Grant
    Filed: December 12, 2011
    Date of Patent: March 10, 2015
    Assignee: Intermolecular, Inc.
    Inventors: ShouQian Shao, Kent Riley Child, James Tsung, Hong Sheng Yang
  • Patent number: 8968537
    Abstract: Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: March 3, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Muhammad M. Rasheed, Rongjun Wang
  • Patent number: 8956513
    Abstract: There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished.
    Type: Grant
    Filed: July 15, 2010
    Date of Patent: February 17, 2015
    Assignee: Ulvac, Inc.
    Inventors: Shinya Nakamura, Yoshinori Fujii, Hideto Nagashima
  • Patent number: 8956516
    Abstract: Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.
    Type: Grant
    Filed: August 31, 2009
    Date of Patent: February 17, 2015
    Assignee: Semicat, Inc.
    Inventors: Jin Hyun Kim, Michael Nam, Jae Yeol Park, Jonggu Park
  • Publication number: 20150034481
    Abstract: The present invention provides a fastening member which involves only a low risk of contamination even after repeatedly performing a detachment operation, and to provide a vacuum device including it. One embodiment is a fastening member comprising: a head section including a head-upper-face portion, a seating face portion, and a head-side-face portion; and a shaft section and including a threaded portion on an end portion thereof on the opposite side from the head section, wherein the threaded portion is given hardness higher than at least those of the other portions of the fastening member, and when the member is attached to the inner wall of the chamber with the fastening member, the threaded portion is threadedly engaged with an internally threaded portion provided in the inner wall of the chamber, and the sealing face portion presses the member against the inner wall of the chamber.
    Type: Application
    Filed: September 10, 2014
    Publication date: February 5, 2015
    Inventor: Shigenori ISHIHARA
  • Publication number: 20150027307
    Abstract: The present invention relates to a method for preparing a hydrogen separation membrane capable of preventing the plating of Pd inside a porous support and a porous shielding layer when a separation membrane is prepared; a hydrogen separation membrane prepared therefrom; and a use thereof. In addition, the present invention relates to a device for preparing a hydrogen separation membrane; and a method for preparing a hydrogen separation membrane using the device, and in particular, relates to a device for preparing a hydrogen separation membrane capable of stably growing a Pd-containing separation membrane for hydrogen gas separation as a plating solution grows from the upper surface of a porous support to a uniform thickness by simply shielding the lower surface of the porous support when a hydrogen separation membrane is prepared using an electroless plating method.
    Type: Application
    Filed: July 25, 2014
    Publication date: January 29, 2015
    Inventors: Shin Kun Ryi, Beom Seok Seo, Jong Soo Park, Dong Wook Lee, Sung Wook Lee
  • Patent number: 8920618
    Abstract: Apparatuses and methods for high-deposition-rate sputtering for depositing layers onto a substrate are disclosed. The apparatuses generally comprise a process chamber; one or more sputtering sources disposed within the process chamber, wherein each sputtering source comprises a sputtering target; a substrate support disposed within the process chamber; a shield positioned between the sputtering sources and the substrate, the shield comprising an aperture positioned under each sputtering source; and a transport system connected to the substrate support capable of positioning the substrate such that one of a plurality of site-isolated regions on the substrate can be exposed to sputtered material through the aperture positioned under each of the sputtering sources; wherein the spacing between the sputtering target and the substrate is less than 100 mm. The apparatus enables high deposition rate sputtering onto site-isolated regions on the substrate.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: December 30, 2014
    Assignee: Intermolecular, Inc.
    Inventors: Hong Sheng Yang, Zhendong Hong, Chi-I Lang