Abstract: A process kit for a sputtering chamber comprises a deposition ring, cover ring, and a shield assembly, for placement about a substrate support in a sputtering chamber. The deposition ring comprising an annular band with an inner lip extending transversely, a raised ridge substantially parallel to the substrate support, an inner open channel, and a ledge radially outward of the raised ridge. A cover ring at least partially covers the deposition ring, the cover ring comprising an annular plate comprising a footing which rests on a surface about the substrate support, and downwardly extending first and second cylindrical walls.

Abstract: There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer.

Abstract: A plasma apparatus includes: a chamber which can be evacuated into vacuum; first electrode disposed within the chamber; a magnet mechanism having a magnet provided apart from and above the first electrode; a second electrode provided facing the first electrode; and a magnetic shield member provided in at least one of gaps between the first electrode and the magnet mechanism and between the first electrode and the second electrode.

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

Abstract: A magnetron sputtering device includes a vacuum chamber body defining a vacuum chamber, at least one magnetron target positioned in the vacuum chamber, and at least one shielding assembly. The at least one shielding assembly corresponds to the magnetron target. The shielding assembly includes two shielding covers positioned at two opposite sides of the magnetron target.

Abstract: A shielding component and a sputter gun are described. The sputter gun has a housing. The housing has a region configured to expose a target surface. The shielding component extends around an inward facing periphery of the region. The shielding component comprises metal foam. The shielding component is configured to provide a fluid proximate to the target surface. An annular channel may be arranged to provide a gas through pores of the metal foam of the shielding component, to the region proximate to the target.

Abstract: A deposition method comprises flowing a first gas into a metallization zone maintained at a first pressure. A second gas flows into a reaction zone maintained at a second pressure. The second pressure is less than the first pressure. A rotating drum includes at least one substrate mounted to a surface of the drum. The surface alternately passes through the metallization zone and passes through the reaction zone. A target is sputtered in the metallization zone to create a film on the at least one substrate. The film on the at least one substrate is reacted in the reaction zone.

Abstract: A combinatorial processing chamber is provided. The combinatorial processing chamber is configured to isolate a radial portion of a rotatable substrate support, which in turn is configured to support a substrate. The chamber includes a plurality of clusters process heads in one embodiment. An insert having a base plate disposed between the substrate support and the process heads defines a confinement region for a deposition process in one embodiment. The base plate has an opening to enable access of the deposition material to the substrate. Through rotation of the substrate and movement of the opening, multiple regions of the substrate are accessible for performing combinatorial processing on a single substrate.

Abstract: Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: A method for making low emissivity panels, including control the ion characteristics, such as ion energy, ion density and ion to neutral ratio, in a sputter deposition process of a layer deposited on a thin conductive silver layer. The ion control can prevent or minimize degrading the quality of the conductive silver layer, which can lead to better transmittance in visible regime, block more heat transfer from the low emissivity panels, and potentially can reduce the requirements for other layers, so that the overall performance, such as durability, could be improved.

Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.

Abstract: An in-line sputtering system includes a chamber and a sputtering target near a top region of the chamber. The system also includes a moving device located on a bottom region of the chamber configured to move a plurality of planar substrates loaded horizontally in a row with at least a gap distance between any neighboring substrates, The gap distance allows the bottom region to be subjected to a deposition from the sputtering target as the gap distance moves across the entire bottom region along with the plurality of planar substrates by the moving device, The system further includes a bottom shield disposed to cover entire bottom region except the moving device and configured to adhere the deposition through the gap distance from the sputtering target for preventing a deposition buildup.

Abstract: It is an object of the present invention to provide a method of and an apparatus for manufacturing a tunnel barrier layer or a gate insulator film with good film quality and film thickness uniformity. The present invention is characterized in that, a shield is configured to shield a region of a substrate to which an erosion region of a target is projected along a normal from a surface of the target and sputtered particles are configured to deposit on the substrate linearly moved when passing through an opening formed in the shield.

Abstract: Apparatuses for forming material films on a solar cell substrate of substantially uniform thickness and processes for forming the same are disclosed. The process performed in the apparatuses is physical vapor deposition (PVD) in some embodiments. In one embodiment, an apparatus includes a specially configured flow aperture. In another embodiment, an apparatus includes moveable shutters which open and close in synchronization with a rotating drum on which substrates are mounted for processing. In other embodiments, the apparatus includes a variable power supply or drum speed control which automatically vary the power supply to the apparatus or drum speed respectively in synchronization with the rotating drum.

Abstract: A substrate processing method may include forming a plasma; extracting ions from the plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system; irradiating the ions at a reflector, wherein the reflector includes a plurality of reflecting plates each having a metal plate and an insulating layer on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the ions; reflecting the ions incident on the reflecting plates away from the insulating layers of the reflecting plates; colliding the ions reflected away from the insulating layers with the metal plates to convert the ions into neutral beams; and irradiating the neutral beams onto a substrate to process the substrate.

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract: An apparatus includes a plurality of target electrodes having attachment surfaces, a substrate holder, a first shutter member provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, a first separating portion disposed between the openings of the first shutter member on its surface of the target electrode side, and a second separating portion disposed between the first shutter member and the target electrodes. The first shutter member is driven so as to bring the first separating portion and the second separating portion toward each other so that an indirect path can be formed between the first separating portion and the second separating portion, and driven so as to bring the first separating portion and the second separating portion away from each other so that the first shutter plate can be rotated.

Abstract: A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: A plasma deposition method deposits a battery component material on a partially fabricated battery cell comprising a battery component layer containing charge-carrying metal species and having an exposed surface. A mesh screen is maintained at a preset distance from the exposed surface, the mesh screen having a plurality of mesh openings. A process gas is energized to form a plasma by applying an electrical power to deposit the battery component material onto the exposed surface of the battery component layer. The mesh screen reduces migration of the charge-carrying metal species in the battery component layer to the exposed surface of the partially fabricated battery cell.

Abstract: A coating system includes a vacuum chamber and a coating assembly. The coating assembly includes a vapor source, a substrate holder, a remote anode electrically coupled to the cathode target, and a cathode chamber assembly. The cathode chamber assembly includes a cathode target, an optional primary anode and a shield which isolates the cathode target from the vacuum chamber. The shield defines an opening for transmitting an electron emission current of a remote arc discharge from the cathode target to the remote anode that streams along the target face long dimension. A primary power supply is connected between the cathode target and the primary anode while a secondary power supply is connected between the cathode target and the remote anode. Characteristically, a linear remote anode dimension and a vapor source short dimension are parallel to a dimension in which an arc spot is steered along the cathode target.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

Abstract: Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract: The present invention provides a film forming apparatus configured such that the occurrence of contamination is reduced between targets. The film forming apparatus includes: a plurality of target electrodes respectively having attachment surfaces to which targets can be attached; a substrate holder for holding a substrate at a position opposing the plurality of target electrodes; a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings that can oppose the attachment surfaces; and a shield member disposed adjacent to the first shutter member and having a number of openings equal to the number of the target electrodes, wherein a gap between the first shutter member and the shield member widens toward an outer perimeter from a portion where adjacent target electrodes are closest.

Abstract: A sputtering apparatus comprises a substrate holder, and a screening member configured to screen a substrate mount surface of a surface of the substrate holder. The screening member comprises a first screening member configured to rotate about an axis in a first direction perpendicular to the substrate mount surface and screen at least a first area, and a second screening member configured to rotate about the axis and screen at least a second area. The first and second screening members are configured to be rotated to move between a screening position at which the first screening member screens at least the first area and the second screening member screens at least the second area and a retreat position at which the first and second screening members retract from an area above the substrate mount surface and overlap each other.

Abstract: Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.

Abstract: An ion accelerator includes a plasma ion source and a micro-collimator. The micro-collimator has a plurality of channels. The length-to-width ratio of each channel is greater than five, and the channel width is less than one micron. The ion source is coupled to the micro-collimator such that ions from the ion source pass into the channels, and then through the plurality of channels. In one specific example, the ion source produces cold ions that have only a small amount of lateral momentum. Each channel is an individually gated acceleration channel that is formed into a solid dielectric material. Ions are accelerated down the acceleration channel. The ion accelerator forms a part of an ionjet head of a Direct Write On Wafer (DWOW) printing system. The DWOW printing system is useful in semiconductor processing in that it can direct write an image onto a 300 mm diameter wafer in one minute.

Abstract: A film-forming apparatus includes a plurality of target electrodes, a substrate holder for holding a substrate, a fires shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a plurality of openings, first separating walls provided on a surface of the first shutter member, the surface being on the target electrode side; and second separating walls provided between the first shutter member and the target electrodes, wherein the first separating walls are provided so as to sandwich each of the plurality of openings of the first shutter member.

Abstract: A tubular target for cathode atomization does not have a backing tube and it is made of molybdenum or a molybdenum alloy. The target has an inner surface which is in contact at least in certain regions with a cooling medium, wherein at least one region of the inner surface is separated from the cooling medium by at least one protective device. By way of example, the protective device may be in the form of a polymer layer. The tubular target exhibits outstanding long-term stability.

Abstract: A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

Abstract: A thin film forming apparatus includes a substrate holding portion and a target portion. The target portion has a plurality of targets arranged at predetermined intervals and parallel to a substrate held by the substrate holding portion. The substrate holding portion is configured to move the substrate parallel to the target portion. A shield portion configured to block sputtered particles flying from the target portion is placed on the target portion side of the substrate so as to face a gap between adjoining ones of the targets.

Abstract: A deposition apparatus comprises a vacuum chamber; a substrate holder; a target; and an angle correcting plate provided so as to cover an upper space of the principal surface of the substrate, and provided outside a spatial region encompassed by line segments connecting a periphery of the principal surface of the target and a periphery of the principal surface of the substrate, wherein when an arbitrary point on the principal surface of the substrate is denoted by B and at least a center point on the principal surface of the target is denoted by C, a part of the principal surface of the angle correcting plate exists on each line which forms 45° from the respective point B with respect to each line which connects the respective point B and the point C, and another part of the principal surface of the angle correcting plate extends to a side opposite to the target.

Abstract: It is provided a device for supporting a rotatable target of a deposition apparatus for sputtering material onto a substrate, wherein the device includes a drive unit for rotating the rotatable target; a ring-shaped part connected to the drive unit for attaching the drive unit to the rotatable target; and, a shield for covering the ring-shaped part. The shield is adapted for rotating together with the ring-shaped part and includes a plurality of parts assembled together. Furthermore, a sputtering apparatus and a method for supporting a rotatable target are provided.

Abstract: A sputtering target has a cylindrical backing tube having two edges and a sidewall comprising a middle portion located between two end portions. The sputtering material is on the backing tube. The sputtering material does not cover at least one end portion of the backing tube. The sputtering target also has a feature which prevents or reduces at least one of chalcogen buildup and arcing at the at least one end portion of the backing tube not covered by the sputtering material.

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

Abstract: A method for making low emissivity panels, comprising forming highly smooth layers of silver on highly smooth layers of base or seed films. The highly smooth layers can be achieved by collimated sputtering, lowering the angular distribution of the sputtered particles when reaching the substrate.

Abstract: A magnetron sputtering system is disclosed in the present invention. A chamber includes a target holder, a substrate holder and a magnetic-field generating component. The magnetic-field generating component is configured to generate a magnetic field in a surrounding area of a substrate to be sputtered and deposited. The present invention can avoid the charged molecules and the cathode ions generated by the target hitting the to-be-sputtered/deposited substrate with higher energy. Therefore, it can avoid the damage of the to-be-sputtered/deposited substrate and decrease the stress of depositing the thin film on the substrate, as so to increase the yield of the products.

Abstract: A shield assembly for a sputter deposition chamber, the shield assembly including an outer sleeve with a gas inlet to conduct a gas through the outer sleeve and an inner sleeve disposed within the outer sleeve, the inner sleeve including gas channels on a surface mating with the outer sleeve to conduct the gas between the inner and outer sleeves. The shield assembly may further include an aperture ring adjacent to a first end of both the inner and outer sleeves, the aperture ring including a plurality of gas outlets to conduct the gas from the gas channels and an inner aperture flange extending from the plurality of gas outlets and adjacent to gas shield flange to form a gas runway for conducting the gas toward a sputter target located within the deposition chamber.

Abstract: A magnetron sputtering coating device includes a deposition chamber, sputtering cathodes, a rotating stand within the deposition chamber, a support platform on the rotating stand, a first rotation system for driving the rotating stand to rotate around a central axis of the rotating stand, and a baffle fixed on the rotating stand. The sputtering cathodes are arranged around and perpendicular to the rotating stand.

Abstract: A sputtering apparatus is provided with an elongated target holder, a substrate holder having a substrate receiving surface, and a mask assembly having an opening configured between the target holder and the substrate holder. The mask assembly is comprised of a first and second masking part having facing edges that form the opening and are disposed parallel to the substrate receiving surface and independently movable in a direction perpendicular to the length of the target holder and parallel to the substrate receiving surface, or in a direction perpendicular to the substrate receiving surface.

Abstract: Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: Embodiments of process kit shields and physical vapor deposition (PVD) chambers incorporating same are provided herein. In some embodiments, a process kit shield for use in depositing a first material in a physical vapor deposition process may include an annular body defining an opening surrounded by the body, wherein the annular body is fabricated from the first material, and an etch stop coating formed on opening-facing surfaces of the annular body, the etch stop coating is fabricated from a second material that is different from the first material, the second material having a high etch selectivity with respect to the first material.

Abstract: Embodiments of the present invention provide methods and apparatuses using sputtering from a mosaic sputtering target for depositing layers onto a substrate, and provide the capability of depositing layers onto site isolated regions of the substrate in a combinatorial manner. A sputtering source is provided including a sputtering target comprising a first region having a first composition, and a second region having a second composition. A selection mechanism is capable of selecting a composition of emitted material from the sputtering source that can range from 0% to 100% of the first composition and from 0% to 100% of the second composition. The selection mechanism can comprise a movable magnetron or a moveable aperture.

Abstract: Sputtering chambers including a mesh material covering the inner surfaces within the chamber are generally provided. The sputtering chamber can include a cathode positioned in working proximity to a sputtering target, a target shield extending over at least a portion of the sputtering target while leaving a majority of the sputtering target exposed, and a mesh material positioned on an outer surface of the target shield. Additionally, or alternatively, the sputtering chamber candefine a pair of side walls, a top wall, and a bottom wall, with the mesh material positioned on an inner surface of the side walls, the top wall, and/or the bottom wall. Methods are also generally provided for sputtering a target in a sputtering chamber to deposit a thin film on a substrate.

Abstract: A cylindrical magnetron sputtering target assembly includes a head and a main body connecting to the head. The main body includes a target, a protecting element located partially around the target, and an insulating assembly. The insulating assembly includes at least one insulating element. The insulating element is fastened to the inner sidewall of the inner plate.

Abstract: A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.