Abstract: Systems and methods for providing in situ, controllably variable concentrations of one, two or more chemical components on a substrate to produce an integrated materials chip. The component concentrations can vary linearly, quadratically or according to any other reasonable power law with one or two location coordinates. In one embodiment, a source and a mask with fixed or varying aperture widths and fixed or varying aperture spacings are used to produce the desired concentration envelope. In another embodiment, a mask with one or more movable apertures or openings provides a chemical component flux that varies with location on the substrate, in one or two dimensions. In another embodiment, flow of the chemical components through nuzzle slits provides the desired concentrations. An ion beam source, a sputtering source, a laser ablation source, a molecular beam source, a chemical vapor deposition source and/or an evaporative source can provide the chemical component(s) to be deposited on the substrate.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: A reactor for growing epitaxial layers includes reaction chamber having a passthrough opening for inserting and removing wafer carriers from the reaction chamber. A reactor also includes a cylindrical shutter located inside the reaction chamber for selectively closing the passthrough opening. The cylindrical shutter is movable between a first position for closing the passthrough opening and a second position for opening the passthrough opening. The cylindrical shutter includes an internal cavity adapted to receive a cooling fluid and tubing for introducing the cooling fluid into the internal cavity. The tubing is permanently secured to the shutter and moves simultaneously therewith. The cylindrical shutter and the internal cavity of the shutter surrounds an outer perimeter of the wafer carrier, thereby minimizing nonuniformity in the temperature and flow field characteristics of the reactant gases.

Abstract: Disclosed herein is a method of roughening a ceramic surface by forming mechanical interlocks in the ceramic surface by a chemical etching process, a thermal etching process, or a laser micromachining process. Also disclosed herein are components for use in semiconductor processing chambers (in particular, a deposition ring for use in a PVD chamber) which have at least one ceramic surface having mechanical interlocks formed therein by chemical etching, thermal etching, or laser micromachining. Ceramic surfaces which have been roughened according to the chemical etching, thermal etching, or laser micromachining process of the invention are less brittle and damaged than ceramic surfaces which are roughened using conventional grit blasting techniques. The method of the invention results in a roughened ceramic surface which provides good adherence to an overlying sacrificial layer (such as aluminum).

Abstract: Disclosed is a facing-targets-type sputtering apparatus including a sputtering unit including a pair of facing targets which are disposed a predetermined distance away from each other, and permanent magnets serving as magnetic-field generation means which are disposed around each of the facing targets, the permanent magnets being provided so as to generate a facing-mode magnetic field and a magnetron-mode magnetic field, the facing-mode magnetic field extending in the direction perpendicular to the facing targets in such a manner as to surround a confinement space provided between the targets, and the magnetron-mode magnetic field extending from the vicinity of a peripheral edge portion of each of the targets to a center portion thereof, thereby confining plasma within the confinement space by means of these magnetic fields for forming a thin film on a substrate disposed beside the confinement space, which apparatus further includes magnetic-field regulation means for regulating the magnetron-mode magnetic fi

Abstract: The invention is directed to an apparatus and method for reducing particulates in a semiconductor processing chamber. The apparatus comprises a shield for lining at portion of the interior of a vacuum processing chamber. The interior of the shield defines a shield passage. A heater element is disposed within the shield passage. A gas inlet is used for providing gases to the interior of the shield passage. The range of temperatures which may be used is wide and generally fitted to the process. For example, the invention may be used to provide a rapid cooldown or bakeout. Once the temperature is chosen, isothermal conditions can be maintained so as to minimize the thermal cycle stress, reducing cracking, peeling, etc.

Abstract: The stray capacitance between the target and grounding member and the loss of high frequency electric current are reduced by arranging dielectric members and metal members with a particular configuration at the circumference of the cathode and target.

Abstract: A mask for vacuum deposition cthat is held by a mask frame is provided. The mask comprises a mask body for deposition; a guide member fixed to at least one side of the mask body for deposition; and tension applying means that, when the guide member is held by the mask frame, applies a predetermined tension to the mask body for deposition via the guide member.

Abstract: This application discloses a system for depositing a magnetic film for a magnetic recording layer or depositing an underlying film prior to depositing a magnetic film as a recording layer. The system comprises; a chamber in which the film is deposited onto a substrate by sputtering, a target that is provided in the chamber and made of material of the film to be deposited, a sputter power source for applying voltage to the target for the sputtering, and a direction control member for controlling sputter-particles released from the target during the sputtering. The direction control member is provided between the substrate and the target. The direction control member provides a passage for the sputter-particles. The direction control member lets the sputter-particles selectively pass through, thereby allowing magnetic anisotropy to the magnetic film. The passage is not close but open in its cross section.

Abstract: In a process and apparatus for coating the front and/or rear facets of semiconductor laser diodes with antireflection layers of minimal reflectivity, the coating material is deposited on the facets while at least one laser parameter is monitored, in-situ, for determining the coating thickness of the individual antireflection layers resulting in the minimum reflectivity of the coating and the respective coating procedure is terminated when the laser parameter indicates that such coating thickness has been reached.

Abstract: A workpiece is manufactured using a magnetron source that has an optimized yield of sputtered-off material as well as service life of the target. Good distribution values of the layer on the workpiece are obtained that are stable over the entire target service life, and a concave sputter face in a configuration with small target-to-workpiece distance is combined with a magnet system to form the magnetron electron trap in which the outer pole of the magnetron electron trap is stationary and an eccentrically disposed inner pole with a second outer pole part is rotatable about the central source axis.

Abstract: A mask frame assembly used in vacuum deposition of thin films of an organic electroluminescent device. The mask frame assembly includes a frame having an opening and at least two unit masks which each have at least one unit masking pattern portion in the direction of the unit mask and two edges which are fixed to the frame under tension.

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract: Sputtering particles are deposited immediately after activating a surface of a substrate composed of a carbon-containing material. Accordingly, a process for reforming a surface of a substrate, a substrate with a reformed surface, and an apparatus therefor are provided in which the depositability and adhesiveness of the sputtering particles are improved. A vacuum ultraviolet light is generated by a laser beam. A surface of a substrate composed of a carbon-containing material is exposed to the generated vacuum ultraviolet light. As a result, the surface of the substrate is activated. Simultaneously therewith, a sputtering particles-generating device generates sputtering particles, such as neutral atoms, ions and clusters. The resultant sputtering particles are deposited on the activated surface of the substrate. Since the sputtering particles are deposited immediately after the surface of the substrate is activated, they are adhered firmly on the surface of the substrate.

Abstract: A component for a vacuum deposition apparatus comprises a component body and a spray deposit formed on a surface of a component body. A spray deposit has surface roughness in which a mean spacing S of tops of local peak of profile is in the range from 50 to 150 ?m, and distances to a bottom of profile valley line Rv and to a top of profile peak line are in the ranges from 20 to 70 ?m, respectively. Furthermore, a spray deposit has a low hardness coat selected from an Al base spray deposit of Hv 30 (Vickers hardness) or less, a Cu base spray deposit of Hv 100 or less, a Ni base spray deposit of Hv 200 or less, a Ti base spray deposit of Hv 300 or less, a Mo base spray deposit of Hv 300 or less and a W base spray deposit of Hv 500 or less. Such component for a vacuum deposition apparatus may suppress, with stability and effectiveness, peeling of deposition material adhering on a component during deposition. In addition, the number of apparatus cleaning and of exchange of components may be largely reduced.

Abstract: Methods and apparatuses for shielding magnetic flux which is associated with a semiconductor fabrication system are provided. A magnetic shield assembly substantially surrounds a side wall of a plasma reactor. The shield assembly comprises a passive shield member in combination with an active shield member. As a result, effective shielding of magnetic flux can occur without excessive distortion of the magnetic field line pattern in the plasma region of the plasma reactor. In one aspect, the shield assembly comprises a first shield member adapted to attenuate a magnetic flux density. The first shield member is disposed in a parallel, spaced apart relationship from the side wall. A second member is attached to the first shield member and is constructed of a ferromagnetic material which is permanently magnetized.

Abstract: In one embodiment of this invention, the apparatus for sputter deposition within an evacuated volume comprises a compact gridless ion source into which an ionizable gas is introduced and from which ions leave with directed energies at or near the sputtering threshold and a sputter target near that source, biased negative relative to the surrounding vacuum enclosure, and located within the beam of ions leaving that source. Particles sputtered from the target are deposited on a deposition substrate spaced from both the ion source and the sputter target. An energetic beam of electrons can be generated by the incident ions striking the negatively biased sputter target and the deposition substrate is located either within or outside of this beam, depending on whether the net effect of bombardment by energetic electrons is beneficial or detrimental to that particular deposition process.

Abstract: A replacement chamber shield is provided for a wafer processing machine that replaces many prior art shield components with a single piece shield. The shield is particularly suitable for use in a processing chamber of a vacuum processing machine of a type for processing a wafer in a vertically-oriented split-plenum, such as machines of the type described in U.S. Pat. Nos. 4,909,695 and 4,915,564 and the machine marketed under the trademark ECLIPSE MARK II by Tokyo Electron Limited. The shield is formed of sheet material formed into an axially-extending cylindrical sidewall that turns radially inwardly into an annular shoulder that oppositely turns into an at least partially axially-extending section that further turns oppositely back radially inwardly into an annular disc having a central circular opening that is larger in diameter than the given wafer diameter. Advantageous dimensions and geometric relationships to components of the machine are described and claimed.

Abstract: The particle implantation apparatus comprises a target, an ion beam source, a target scanning mechanism, a slit plate, a holder, and a holder scanning mechanism. The target is used for sputtering. The ion beam source applies an ion beam apparently like a sheet wider in the X direction onto the target so as to generate sputter particles. The target scanning mechanism mechanically scans the target in the Y direction crossing the X direction in reciprocating manner at a fixed angle with respect to the ion beam. The slit plate is used for passing sputter particles generated from the target and has a long slit extending in the X direction. The holder holds a substrate at the position where sputter particles having passed through the slit are incident. The holder scanning mechanism mechanically scans the holder in the Z direction crossing both the X and Y directions in reciprocating manner.

Abstract: An apparatus for film deposition onto a substrate from a source of target particles including a plasma generator creating a plasma that isotropically accelerates the target particles towards the substrate. A secondary ionizer creates a secondary ionization zone between the plasma and the substrate support. The isotropically accelerated target particles are ionized as they pass through the secondary ionization zone. A static field generator creates a static field between the secondary ionization zone and the substrate accelerating the ionized target particles along a substantially collimated trajectory perpendicular to the substrate. Optionally, a collimator is included between the secondary ionization zone and the substrate and biased to focus and accelerate the collimated target particles.

Abstract: A partial turn coil disposed in a semiconductor fabrication chamber for generating a plasma and sputter depositing coil material onto a substrate can exhibit reduced RF voltages.

Abstract: An object of the invention is to provide a sputtering device which can be increased distribution of film formation and coverage distribution better than prior sputtering devices. Thus, this invention is that, in the sputtering device constituted of at least a substrate, a substrate holder for holding the substrate, at least one target for forming a thin film on the substrate, at least one sputtering cathodes each of which has the target and magnets arranged behind the substrate, an axis of the target is inclined to an axis of the sputtering cathode, and the sputtering cathode is rotated in its axis to make the target swing to the substrate.

Abstract: In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

Abstract: The invention relates to a vacuum treatment chamber for work pieces which comprises at least one induction coil for at least co-generating a treatment plasma in a discharge chamber which is located in the interior of the coil. It also comprises a screen which is arranged between the discharge chamber and the coil, and which is coaxial in relation to the axis of the coil. The screen comprises slots which have a directional component which is parallel to the coil axis. The screen is formed by a self-contained body. The slots are provided along at least the main part of the body's circumference in a slot density per circumferential length unit of S=(number of slots)/cm equaling 0.5≦S.

Abstract: A magnetic dipole ring assembly positioned inside a vacuum chamber and around a wafer being sputter deposited with a ferromagnetic material such as NiFe or other magnetic materials so that the material is deposited with a predetermined magnetization direction in the plane of the wafer. The magnetic dipole ring may include 8 or more arc-shaped magnet segments arranged in a circle with the respective magnetization directions precessing by 720° around the ring. The dipole ring is preferably encapsulated in a vacuum-tight stainless steel carrier and placed inside the vacuum chamber. The carrier may be detachably mounted on a cover ring, on the shield, or on the interior of the chamber sidewall. In another embodiment, the magnet is a magnetic disk placed under the wafer. Such auxiliary magnets allow the magnetron sputter deposition of aligned magnetic layers.

Abstract: In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or titanium-containing target particles are selectively ionized, while inert particles, such as argon atoms, remain substantially unaffected. Advantageously, one or more optical ionizers, such as lasers, are used to create one or more ionization zones within the deposition chamber in which such selective ionization takes place.

Abstract: A sputtering apparatus for forming a film by a physical gas-phase growth on a substrate having a irregular or flat shape is provided including three or more axes for independently varying a relative positional relationship between a substrate and a cathode in the course of film formation.

Abstract: Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

Abstract: To generate an especially good heat transfer between a seating face of a storage plate support and a storage plate, during coating with a sputter source in a vacuum installation, the seating face of the storage plate support is slightly annularly convexly arched and the storage plate is clamped in the center as well as on its outer margin by a center mask and an outer mask against the arched seating face. Hereby an especially good heat transfer is attained with very low arching d, whereby the storage plate is treated gently and simultaneously, during the coating process, no layer thickness distribution problems occur through arching that is too large.

Abstract: A method and apparatus for forming a coating on a sputter chamber workpiece. The apparatus generally includes a sputter chamber having at least one workpiece. The at least one workpiece generally includes one or more trenches formed therein, the trenches being configured to define an arc spray coating region. The method generally includes forming one or more trenches in the workpiece, the trenches defining a coating region and applying a metal coating to the coating region by arc spraying.

Abstract: A sputtering apparatus for producing a mixed film having a stoichiometrically complete composition and a refractive index corresponding to a designed value without reducing the film deposition rate, a mixed film produced by such sputtering apparatus and a multilayer film including the mixed film are provided.

Abstract: The present invention generally provides a method and apparatus for use in a physical vapor deposition chamber. In one embodiment, invention provides a shutter disk mechanism that eliminates the need for axially orientating a shutter disk to a robot blade that transfers the shutter disk to a substrate support.

Abstract: It is an object of the invention to prolong the service life of a sputter ions source, to lower the maintenance costs and largely to prevent atomization of the parts of the ions source, which are in the vicinity of the cathode insert, necessary for generating the negative ions.

Abstract: A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

Abstract: A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.

Abstract: Disclosed is a shielding assembly for use within a substrate deposition processing chamber. The shielding assembly permits sputtering and evaporation processes to take place without the target material depositing upon the internal non-disposable surfaces of the chamber. The shielding assembly is of an improved construction which permits it to be uncoupled from an adapter plate without the need for removing the adapter plate from the deposition chamber.

Abstract: For optimizing the yield of atomized-off material on a magnetron atomization source, a process space, on the source side, is predominantly walled by the atomization surface of the target body. The magnetron atomization source has a target body with a mirror-symmetrical, concavely constructed atomization surface with respect to at least one plane and a magnetic circuit arrangement operable to generate a magnetic field over the atomization surface. The magnetic circuit arrangement includes an anode arrangement, a receiving frame which extends around an edge of the target body and is electrically insulated with respect thereto. The receiving frame has a receiving opening for at least one workpiece to be coated. The magnetron source can be used to provide storage disks, such as CDs, with an atomization coating.

Abstract: A carrier (20) is used in the thin film coating of disks (35). The disks (35) are held in a disk tray (30). The disks (35) have a center (35a) through which the thin film coating can go through. The carrier (20) includes a base plate (21) for receiving the disk tray (30). A plurality of discrete shields (24) are positioned in alignment with the center openings of the disk (35). The shields (24) are releasably connected to the base plate (21). Preferably, the shields (24) are releasably connected by a magnetic force.

Abstract: Apparatus and methods of processing a substrate having a thickness of 250 microns or less are described. Each use a dark space shield between the plasma in a process chamber and the periphery of the substrate to prevent the presence of plasma between the shield and the periphery whilst allowing processing of the substrate. In every case an electrostatic chuck is utilised.

Abstract: A method includes a step of attracting a glass substrate 20 that is a subject for deposition using the electrostatic attraction of a stage 1, a step of aligning the attracted glass substrate with a deposition mask 2, and a step of evaporating an organic compound that is a deposition material, used for forming electroluminescent elements so as to deposit the compound on the glass substrate 20. An electrostatic chucking function is provided to the deposition mask according to needs, whereby the adhesion is enhanced.

Abstract: A method and apparatus for performing physical vapor deposition of a layer or a substrate, composed of a deposition chamber enclosing a plasma region for containing an ionizable gas; an electromagnetic field generating system surrounding the plasma region for inductively coupling an electromagnetic field into the plasma region to ionize the gas and generate and maintain a high density, low potential plasma; a source of deposition material including a solid target constituting a source of material to be deposited onto the substrate; a unit associated with the target for electrically biasing the target in order to cause ions in the plasma to strike the target and sputter material from the target; and a substrate holder for holding the substrate at a location to permit material sputtered from the target to be deposited on the substrate.

Abstract: The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed from a heat-resistant material, which completely surrounds the sputtering cathode and the object to be coated, at a small spacing, and which has at least one opening to let a gas in and at least one opening to let a gas out.

Abstract: In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or titanium-containing target particles are selectively ionized, while inert particles, such as argon atoms, remain substantially unaffected. Advantageously, one or more optical ionizers, such as lasers, are used to create one or more ionization zones within the deposition chamber in which such selective ionization takes place.

Abstract: A sputtering target having an annular vault with a throat between two sidewalls and facing a substrate to be sputter coated. The vault is partially closed by a plate placed in the annular throat between the sidewalls. Thereby, the plasma density is increased within the vault. Furthermore, the position of the annular gap in the plate between the two sidewalls may be chosen to increase uniformity of sputtering deposition arising from the two sidewalls. The plate may be formed of one or more annular rings attached to the walls or a single plate having apertures formed therein may bridge the throat. Alternatively, the target may be formed as a cylindrical hollow cathode with the plate partially closing the circular throat. A rotating asymmetric roof magnetron may be combined with a hollow cathode without the restricting plate.

Abstract: This application discloses a multi-layer film deposition apparatus comprising; plural cathodes comprising targets respectively, a main rotation mechanism for rotating each cathode together, and a substrate holder to hold a substrate onto which a multi-layer film is deposited by sputtering. The targets are arranged at positions where their center axes are on a circumference. The main rotation mechanism rotates the cathodes around the axis in common to the circumference. The substrate is located at a position within an area in view to the direction of the axis. The area is formed of two loci of points on the rotated targets. One of the locus is drawn by the point nearest to the axis, and the other locus is drawn by the point furthest from the axis.

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract: Physical vapor deposition (PVD) system comprises a chamber, an upper shield and a lower shield mounted within the chamber, a cover ring having one or more tabs extending radially inwardly therefrom. The PAD system further includes a shutter disk having one or more notched areas formed in the periphery thereof to receive non-contacting the one or more tabs of the cover ring. The cover ring has two or more recesses formed in an upper side thereof with a guide pin extending from the center of the recesses. The lower shield has two or more cups with a hole therein to be engaged with the guide pin of the cover ring to keep the lower shield from rotating with respect to the cover ring. The cups of the lower shield are inserted into the recesses of the cover ring. These improvements enable a standard shutter arm assembly and a shutter disk to be utilized in a two-tab block-out scheme.

Abstract: A method and apparatus for forming a coating on a sputter chamber workpiece. The apparatus generally includes a sputter chamber having at least one workpiece. The at least one workpiece generally includes one or more trenches formed therein, the trenches being configured to define an arc spray coating region. The method generally includes forming one or more trenches in the workpiece, the trenches defining a coating region and applying a metal coating to the coating region by arc spraying.

Abstract: The present invention generally provides a physical vapor deposition chamber and a method for detecting a position of a shutter disk within a physical vapor deposition chamber. In one embodiment, a physical vapor deposition chamber includes a chamber body having a shutter disk mechanism disposed therein. A housing is sealingly coupled to a sidewall of the chamber body and communicates therewith through a slot formed through the sidewall. At least a first sensor is disposed adjacent to the housing and orientated to detect the presence of a shutter disk mechanism within the housing. In one embodiment, a method for detecting the position of a shutter disk within a physical vapor deposition chamber having a substrate support generally includes moving the shutter disk away from a substrate support, and changing a state of a first sensor in response to a position of an edge the shutter disk.

Abstract: A shutter assembly for use in a thin-film processing system to control exposure of a substrate to a process energy source includes a shield member having a shutter opening. The shutter opening is defined by sides which are oriented along radial lines of a central axis to promote uniform exposure of the substrate to the process energy source.