Abstract: A collimator that formed from a plurality of metal layers that are shaped by use of lithographic techniques in specific shapes. The formed metal layers are stacked and aligned together and then connected together to form the collimator.

Abstract: A physical vapor deposition target assembly is configured to isolate a target-bonding layer from a processing region. In one embodiment, the target assembly comprises a backing plate, a target having a first surface and a second surface, and a bonding layer disposed between the backing plate and the second surface. The first surface of the target is in fluid contact with a processing region and the second surface of the target is oriented toward the backing plate. The target assembly may include multiple targets.

Abstract: The present invention presents an improved optical window deposition shield for optical access to a process space in a plasma processing system through a deposition shield, wherein the design and fabrication of the optical window deposition shield advantageously provides an optically clean access to the processing plasma in the process space while sustaining substantially minimal erosion of the optical window deposition shield.

Abstract: A sputtering apparatus includes a target holder which is placed in a vacuum vessel and can hold a target configured to deposit a film on a substrate, a substrate holder which can mount the substrate, a first shield member which is disposed in a vicinity of the substrate holder, and configured to form a closed state in which the substrate holder and the target holder are shielded from each other, or an open state in which the substrate holder and the target holder are opened to each other, a first opening/closing driving unit adapted to open/close the first shield member to enter the open state or the closed state, a second shield member, having an annular-shaped, disposed on the surface of the substrate holder and an outer peripheral portion of the substrate, and a driving unit adapted to move the substrate holder in order to bring the substrate holder, on which the second shield member is disposed, close to the first shield member in the closed state.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed.

Abstract: A deposition apparatus includes a shutter storage unit which is connected to a processing chamber via an opening and stores a shutter in the retracted state into an exhaust chamber, and a shield member which is formed around the opening of the shutter storage unit and covers the exhaust port of the exhaust chamber. The shield member has, at a position of a predetermined height between the opening of the shutter storage unit and a deposition unit, the first exhaust path which communicates with the exhaust port of the exhaust chamber.

Abstract: A multi-chamber processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. The system includes a sputtering chamber and a separate pre-clean chamber, where wafers can be transferred between the two chambers by a robotic arm without breaking a vacuum. The wafers are mounted one-by-one onto a rotating pallet in the pre-cleaning chamber and sputtering chamber. The pallet is firmly fixed to a rotatable table in the sputtering chamber. Copper tubing in the table couples RF energy to the wafers, and a liquid running through the copper tubing controls the temperature of the wafers. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate over their respective targets for uniform target erosion and uniform deposition on the wafers.

Abstract: Two shutter plates form a double rotary shutter mechanism. A cylindrical second deposition shield is interposed between the first shutter plate disposed on the side of a target and the second shutter plate so as to surround a first opening formed in the first shutter plate. A cylindrical first deposition shield is interposed between a sputtering cathode and the first shutter plate so as to surround the front surface region of the target. This makes it possible to prevent a sputtering substance from passing through the gaps between the first shutter plate and the second shutter plate and between the first shutter plate and the sputtering cathode, and to, in turn, prevent generation of any cross-contamination.

Abstract: A charged particle beam PVD device is provided, including a target of coating material inside of a casing, a vapor aperture provided in the casing, and a shielding device provided adjacent to the vapor aperture, the shielding device being on floating potential.

Abstract: The invention relates to an anode for the formation of plasma by means of the development of electric arc discharges starting from a target connected as cathode for coating of substrates with target material in a vacuum. It is an object of the invention to propose a possibility by means of which the coating rate at least can be increased without substantially increasing the effort related to plant engineering required for this. The anode according to the invention for the plasma formation by means of the development of electric arc discharges starting from a target connected as cathode is then disposed in a known manner in a distance to the target. At the same time, anode bars are present initially disposed in parallel to the surface of the targets on the anode. In addition, strip-shaped elements being separated from each other by gaps are formed on the anode. Then, the strip-shaped elements start from the anode bars and face in the direction of a substrate to be coated on the surface.

Abstract: Certain example embodiments of this invention relate to techniques for reducing stress asymmetry in sputtered polycrystalline films. In certain example embodiments, sputtering apparatuses that include one or more substantially vertical, non-conductive shield(s) are provided, with such shield(s) helping to reduce the oblique component of sputter material flux, thereby promoting the growth of more symmetrical crystallites. In certain example embodiments, the difference between the travel direction tensile stress and the cross-coater tensile stress of the sputtered film preferably is less than about 15%, more preferably less than about 10%, and still more preferably less than about 5%.

Abstract: A shadow mask for patterning a substrate during a semiconductor process. In one implementation, the shadow mask may include a plate having openings in the shape of individual dies on the substrate and having an area slightly greater than the substrate, and a layer having openings in the shape of features patterned on the substrate, wherein the layer is coupled to a bottom surface of the plate by an epoxy.

Abstract: A sputtering deposit apparatus capable of depositing a thin film having uniform sheet resistance value is provided. The sputtering deposit apparatus is arranged with at least two magnetron sputtering units within a film deposit chamber. On the upstream side in the substrate transfer direction 43 of the target shield 55 provided on the magnetron sputtering unit disposed on the most upstream side in the substrate transfer direction, of at least the two magnetron sputtering units, there is disposed the first cathode shield 62 which is electrically insulated.

Abstract: The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode (802), a rotatable stage (801) and a rotatable shielding plate (805). The sputtering apparatus controls the rotation of at least one of the cathode (802), stage (801) and shielding plate (805) so that sputtered particles impinging at an angle formed with respect to a normal line of the substrate (804) of 0° or more and 50° or less out of sputtered particles generated from the target (803a) during sputtering are made to impinge on the substrate (804).

Abstract: The present invention provides a sputtering apparatus and a film forming method that can form a high quality film in a groove having a sloping wall such as a V-groove. The sputtering apparatus of the present invention includes a rotatable cathode (102), a rotatable stage (101), and a rotatable shield plate (105). The sputtering apparatus controls rotation of at least one of the cathode (102), the stage (101), and the shield plate (105) so that sputtering particles are incident on the V-groove formed in a substrate (104) at an angle of 50° or less with respect to a normal to a sloping wall of the V-groove.

Abstract: To provide a sputtering apparatus that enables oblique film forming by arranging a target and a substrate so as to allow sputtered particles emitted from the target to obliquely enter the substrate selectively, and can form a magnetic film having high uniaxial magnetic anisotropy uniformly and compactly. A sputtering apparatus includes a cathode having a sputtering target supporting surface, the cathode being provided with a rotation axis about which the sputtering target supporting surface rotates, and a stage having a substrate supporting surface, the stage being provided with a rotation axis about which the substrate supporting surface rotates, and the sputtering apparatus is constituted such that the sputtering target supporting surface and the substrate supporting surface face to each other, and are rotatable independently about respective rotation axes.

Abstract: A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly.

Abstract: The invention generally provides a ground shield for use in a physical vapor deposition (PVD) chamber. In one embodiment, a ground shield includes a generally cylindrical body comprising an outer wall, an inner upper wall, an inner lower wall having a diameter less than a diameter of the inner upper wall and a reentrant feature coupling the upper and inner lower walls. The reentrant feature advantageously prevents arching between the shield and target, which promotes greater process uniformity and repeatability along with longer chamber component service life.

Abstract: A component of a disc drive has a coating of a predetermined length on its surface, the coating having at least two separate tapered regions applied in independent steps, the at least two separate tapered regions each having a length that is less than the predetermined length of the component surface. When the component is a shaft of a spindle motor, the ends of the shaft are masked before the tapered regions of coating are applied, and the thickness of the masks covering the shaft ends is varied to control a taper of tapered regions.

Abstract: Apparatus for processing a substrate in a physical vapor deposition chamber is provided herein. In one embodiment, apparatus for processing a substrate in a physical vapor deposition chamber having a target disposed in a lid assembly and a grounded chamber wall includes a ground frame and a ground shield. The ground frame is configured to be insulatively coupled to the lid assembly and has an electrically conductive lower surface. The ground shield has an electrically conductive wall that is adjustably and electrically coupled to the conductive lower surface of the ground frame. The ground shield is configured to circumscribe the target and has an upper edge configured to provide a gap between the upper edge and a peripheral edge of the target when installed.

Abstract: A vacuum processing apparatus which processes an object to be processed with the use of a mask membrane plane of magnetic material and a mask frame of the magnetic material is characterized in that the mask of the magnetic material is attracted by an electro-permanent magnet that is disposed in an opposite side of the mask with respect to the surface having the object to be processed mounted thereon.

Abstract: A sputtering apparatus comprises a substrate unit that includes a substrate on which a target material is deposited in a chamber and a target unit on which a plurality of target sections formed of the target material are arranged. The sputtering apparatus further comprises a cathode plate that supplies electric power to surfaces of the plurality of target sections and a plurality of gas supply ports provided on regions between the plurality of target sections.

Abstract: A device to fix a substrate for a thin film sputter, includes a mask, a mask pressing plate, a magnetic body, and a driving unit. The mask having patterns is positioned under the substrate so as to form the patterns on the substrate. The mask pressing plate is positioned over the substrate and moves toward and contacts a back surface of the substrate at a predetermined pressure. The magnetic body is placed over the mask pressing plate and moves toward the mask pressing plate so as to have the mask adhere closely to the substrate by a magnetic force of the magnetic body. The driving unit applies a driving force to move the magnetic body. Where the mask pressing plate descends, the mask pressing plate adheres closely to the substrate. Thereafter, the magnetic body descends toward the back surface of the substrate which is supported by the mask pressing plate. The mask underneath the substrate adheres closely to a front surface of the substrate by the magnetic force of the magnetic body.

Abstract: A sputter-coating apparatus is configured for coating a substrate with a target material, and includes an upper housing defining an opening, a lower housing, an infrared heating unit, and a shielding member. The lower housing and the upper housing cooperatively defines an airtight chamber. The substrate and the target material are positioned in the lower housing. The infrared heating unit is fixed to the upper housing and configured for heating the substrate. The shielding member is fixed to the upper housing to seal the opening and is transparent to infrared rays generated by the infrared heating unit.

Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.

Abstract: An apparatus for forming a thin film pattern according to an aspect of the invention may include: a vacuum chamber including a mask loading part and a film forming part having a window openable or closable with respect to the mask loading part; an unwinding roll and a winding roll disposed in the film forming part and running a sheet; a source containing unit accommodating a deposition source and mounted such that the deposition source is evaporated to deposit a thin film on the sheet located on the evaporation area; at least one mask having a pattern defining a pattern of the thin film to be deposited on the sheet, and arranged in the mask loading part; a mask moving unit moving the at least one mask arranged in the mask loading part toward a deposition position of the film forming part or moving the mask in a reverse direction; and a shutter unit selectively preventing a movement of the deposition source evaporated toward the mask from the source containing unit.

Abstract: In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requires forming a diffusion barrier to prevent contamination of other parts of an integrated circuit and forming a seed layer to facilitate copper plating steps. Unfortunately, conventional methods of forming the diffusion barriers and seed layers require use of separate wafer-processing chambers, giving rise to transport delays and the introduction of defect-causing particles. Accordingly, the inventors devised unique wafer-processing chambers and methods of forming barrier and seed layers.

Abstract: A device for surface treatment, in particular galvanic surface treatment, of workpieces, including at least one reactor housing, having at least one process chamber and being coverable by a cover, and a screen element which is spatially connected to the process chamber, and which has at least one receptacle for a workpiece to be treated, a fixing element having a smaller thermal expansion coefficient being situated between the reactor housing and the screen element, which defines their relationship relative to each other.

Abstract: A sputtering system for depositing a thin film on the surface of a disc substrate in which high precision positioning of an inner mask and an outer mask is facilitated. The sputtering system has a mask member placed on the surface of the substrate mounted on a substrate holder to cover a partial region on the surface of the substrate. A thin film is deposited by sputtering in a region on the surface of the substrate not covered by the mask member. A section for carrying in and carrying out the substrate has mechanically holds and releases the substrate holder mounting the substrate, and mechanically holds and releases the mask member.

Abstract: A sputtering apparatus includes: a film forming chamber that houses a substrate hold so as to be capable of being carried in a horizontal direction; a sputtered particle ejecting section that includes an upper target and a lower target that are disposed so as to face each other and oblique to the substrate, and an opening, and in which sputtered particles are generated from a pair of the targets by plasma, and the sputtered particles are ejected from the opening to the substrate carried from a side adjacent to the upper target to another side adjacent to the lower target; and a slit member that has a slit through which the sputtered particles are selectively passed, and is disposed between the substrate and the sputtered particle ejecting section.

Abstract: Embodiments described herein generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a collimator for mechanical and electrical coupling with a shield member positioned between a sputtering target and a substrate support pedestal is provided. The collimator comprises a central region and a peripheral region, wherein the collimator has a plurality of apertures extending therethrough and where the apertures located in the central region have a higher aspect ratio than the apertures located in the peripheral region.

Abstract: Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.

Abstract: A method for analyzing a sample for the manufacture of integrated circuits, e.g. MOS transistors, application specific integrated circuits, memory devices, microprocessors, system on a chip. The method includes providing an integrated circuit chip, which has a surface area with at least one region of interest, e.g., bond pad. The method includes covering a first portion of the surface area including the region of interest using a blocking material. The method also forms a metal layer on a second portion of the surface area, while the blocking material protects the first portion. The method removes the blocking material to expose the first portion of the surface area including the region of interest. The method also subjects the metal layer to a voltage differential to draw away one or more charged particles from the first portion of the surface area. The method also subjects the surface area including the region of interest to spectrometer analysis.

Abstract: The present invention relates to relates to a semiconductor package having a function of shielding electromagnetic interference (EMI), a manufacturing method thereof and a jig, and more particularly, to such a semiconductor package having an electromagnetic interference (EMI)-shielding function, a manufacturing method thereof and a jig for use in a plasma sputtering, in which a nickel alloy is coated on the surface of a semiconductor package by a sputtering method so as to shield electromagnetic interference (EMI) generated from the semiconductor package.

Abstract: A sputtering apparatus for performing a film forming process on a substrate surface of a disk-like substrate while rotating the substrate around a rotation axis line, the sputtering apparatus including a chamber, a table that rotates the substrate around the rotation axis line, and a sputtering cathode that has a cathode surface facing the substrate. Assuming that a distance between the rotation axis line and a peripheral edge of the substrate is R, a distance between the rotation axis line and a center point of the cathode surface is OF, and a height from the substrate surface to the center point of the cathode surface is TS, the following relationship is substantially satisfied: R:OF:TS=100:175:190±20. In addition, the rotation axis line intersects a normal line passing through the center point of the cathode surface, and an intersection angle thereof falls within a range of 22°±2°.

Abstract: A sputtering apparatus of a continuous system that a first target 17a and a second target 17b are arranged to obliquely face a substrate 6 and other targets to form a film while conveying the substrate 6 along a conveying path 15, wherein shields 19a, 19b facing the conveying direction of at least the substrate 6 are provided between the conveying path 15 and the first and second targets 17a, 17b to have therebetween an extended region toward the conveying path 15 in the space between the first target 17a and the second target 17b to enable to obtain a high quality film and to enable to prevent particles from diffusing in a chamber 3.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: The invention relates to a method and apparatus for the generation of multilayered coatings onto substrates. Typically the apparatus used is a closed field unbalanced magnetron configuration in conjunction with one or more cylindrical and rotatable shields and a substrate carrier on which the substrates to be coated are carried. The shields and substrate holder are provided for rotation about a common axis of rotation. The shields are provided with apertures to allow the selective positioning of the apertures to define a passage or passages along which material from the targets can pass onto the substrates. The targets can be cleaned prior to the coating stage by operation of the targets with the shields selectively positioned to prevent the deposited material from reaching the substrates.

Abstract: Enhanced reliability and performance stability of a deposition baffle is provided in ionized physical vapor deposition (iPVD) processing tool in which a high density plasma is coupled into a chamber from an external antenna through a dielectric window. A deposition baffle with slots protects the window. The deposition baffle has slots through it. The width of the slots at the window side of the baffle is different from the width of the slots at the plasma side of the baffle. Preferably, the ratio of width of the slots at the window side is preferably less than the width at the plasma side. The slots have sidewalls at the plasma side that are arc spray coated. The ratio of the baffle thickness to slot width, or the slot's aspect ratio, is less than 8:1, and preferably less than 6:1. The deposition baffle is spaced less than 1 mm from the window, and preferably less than 0.5 mm from the window.

Abstract: A backside coating prevention device adapted for a coating chamber for coating plate-shaped substrates is provided, said coating chamber being adapted for coating continuously or discontinuously transported plate-shaped substrates, comprising a front wall having a substrate feeding opening and a rear wall having a substrate discharge opening, a coating material source adapted for dispensing coating material into the coating chamber, and a transport system, a front side of the transport system facing the coating material source, the transport system being adapted for continuously or discontinuously transporting a plurality of plate-shaped substrates along a transport path on the front side of the transport system, wherein said backside coating prevention device is adapted for providing a gas barrier at the front side of the transport system and adjacent to the backsides of the plurality of plate-shapes substrates for preventing backside coating of the plate-shaped substrates.

Abstract: A film deposition apparatus includes: a direct current power source; a metal target coupled to the direct current power source; a dielectric frame arranged to surround a periphery of the metal target; an electrode arranged at a back side of the metal target; and a magnetic field generator arranged at a back side of the metal target as well as of the dielectric frame. In the apparatus, at least part of the magnetic field generator is arranged to follow the dielectric frame, and the film deposition apparatus employs reactive direct current sputtering.

Abstract: A one-piece inner shield usable in a plasma sputter reactor and extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil used in exciting the plasma. An outer shield includes an outwardly extending flange on its end alignable with the inner shield flange, holes in correspondence to recesses in the inner shield for standoffs for the RF coil, and circumferentially arranged gas flow holes.

Abstract: A sputtering apparatus to form a film on a substrate includes an electrode arranged in a vacuum chamber and having a placing surface to place a target on it, a stationary portion provided on the peripheral portion of the placing surface, a shutter mechanism to shield in the vacuum chamber the target placed on the placing surface, and a moving mechanism which sets in the vacuum chamber the shutter mechanism at a predetermined position. Of the stationary portion and the movable portion of the shutter mechanism, one is provided with a recess and the other one is provided with a projection. When the moving mechanism sets the shutter mechanism at a position close to the stationary portion, the projection is inserted in the recess.

Abstract: A sputtering apparatus is provided which is capable of forming a coating film made of a metallic film on a coating surface of a substrate by sputtering to have such a film thickness that gradually increases or gradually decreases from its one end side to the other end side. The apparatus comprising: at least one supporting means supporting at least one substrate such that a coating surface thereof is opposed to an emission surface of a sputtering target at an angle; and at least one shielding member for preventing part of sputtering particles emitted from the emission surface from reaching the coating surface, the at least one shielding member being disposed in the vacuum chamber so as to be positioned in a space between the coating surface of the at least one substrate and the emission surface of the sputtering target.

Abstract: Provided is a sputtering apparatus which can check a short-circuit of a mask during a non-discharge period, the sputtering apparatus including: a substrate support, which is installed inside a chamber and supports a substrate; a target, which includes a target material that is to be deposited on the substrate; a mask, which is spaced apart from the substrate so as to surround the peripheral part of the substrate; a shield, which supports the mask and is connected to ground; an insulating member, which combines the mask and the shield and includes an insulating material; and a short-circuit detecting apparatus for detecting a short-circuit of the mask during a non-discharge period of the sputtering apparatus.

Abstract: The invention provides a chuck plate assembly that includes a shadow mask formed with a predetermined pattern; a shadow mask frame holding the shadow mask and having heat-radiating and cooling functions; a substrate aligned with the shadow mask and onto which deposition materials from a deposition source are deposited; and a chuck plate, attaching the substrate to the shadow mask, that includes a refrigerant circulating duct. The temperature of the substrate is optimized in consideration of the temperature of the shadow mask so that an alignment error due to thermal deformation is minimized. That is, the temperature of the shadow mask itself is prevented from rising, and thereby prevents deformation of the shadow mask due to thermal expansion, which improves the precision of a substrate pattern position.

Abstract: A system and method for sputtering having a substrate holder, the target-cathode and the shield that are all electrically isolated from each other and are all capable of independently being subjected to different voltages. The substrate holder can be a pallet that holds a plurality of substrates. The system further includes a plurality of target-cathodes and shields disposed along the path of travel of the moving substrate holder, and a controller configured to selectively vary the target-cathode voltage, the shield voltage, and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes and shields are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage and shield voltage.

Abstract: A component for a vacuum apparatus for use in a plasma processing apparatus or a film forming apparatus for a semiconductor or the like, in which a surface is covered with a ceramic and/or metallic thermal spray film and projection-shaped particles of a width of 10-300 ?m, a height of 4-600 ?m and an average height/width ratio of 0.4 or higher are present within a range of 20-20,000 particle/mm2 on the surface of the thermal spray film. The thermal spray film has a porosity of 10-40%, shows a high adhering property to a film-shaped substance, is free from a product contamination by particles generated by a peeling of the film-shaped substance and can be continuously used over a prolonged period.