Specified Target Particulars Patents (Class 204/298.12)
  • Patent number: 10307861
    Abstract: A bonded dissimilar material structure includes a first component made of a first dissimilar material; a second component made of a second dissimilar material stacked under the first component; and a plurality of blind holes formed on an upper surface of the second component; and the first component has a plurality of protrusions formed in the plurality of blind holes on the second component, respectively.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: June 4, 2019
    Assignee: COOLER MASTER CORP.
    Inventor: Ralph Remsburg
  • Patent number: 10266939
    Abstract: A sputtering target for a magnetic recording medium, wherein an average grain area of a B-rich phase is 90 ?m2 or less. A process for producing a sputtering target for a magnetic recording medium, wherein an alloy cast ingot is subject to heat treatment, thereafter subject to primary rolling which includes at least one pass of cold rolling, thereafter subject to secondary rolling, and machined to prepare a target. The obtained sputtering target for a magnetic recording medium has few cracks in the B-rich phase and has a high leakage flux density, and by using this target, it is possible to stabilize the discharge during sputtering, suppress arcing which occurs from cracks in the B-rich phase, and suppress the generation of particles.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: April 23, 2019
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shin-ichi Ogino, Yuichiro Nakamura
  • Patent number: 10211035
    Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 ?m width (e.g., less than about 50 ?m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.
    Type: Grant
    Filed: February 7, 2018
    Date of Patent: February 19, 2019
    Assignee: H.C. STARCK, INC.
    Inventors: Gary Alan Rozak, Mark E. Gaydos
  • Patent number: 10211068
    Abstract: Preventing a deformation when a metal layer made of copper or copper alloy is brazed on an aluminum-made cooler, a power-module substrate with cooler having low thermal resistance and high bonding reliability is provided: a circuit layer made of copper or copper alloy is bonded on one surface of a ceramic board and a metal layer made of copper or copper alloy is bonded on the other surface of the ceramic board; a second metal layer made of aluminum or aluminum alloy is bonded to the metal layer by solid-phase diffusion; and a cooler made of aluminum alloy is brazed on the second metal layer with Al-based Mg-included brazing material.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: February 19, 2019
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Sotaro Oi, Tomoya Oohiraki, Takeshi Kitahara
  • Patent number: 10161032
    Abstract: Provided is a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more, wherein at least one nonmetallic element selected from S, P, and B is contained in a total amount of 0.1 to 100 mass ppm as the additive component and the variation in the content of the nonmetallic element between the top, middle, and bottom portions of the ingot is within ±200%. Provided is a method of manufacturing a titanium ingot containing a nonmetallic element in an amount of 0.1 to 100 mass ppm, wherein S, P, or B, which is a nonmetallic element, is added to molten titanium as an intermetallic compound or a master alloy to produce a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: December 25, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kazuto Yagi, Eiji Hino, Yuichiro Shindo
  • Patent number: 10090012
    Abstract: An Fe-based magnetic material sintered compact containing BN, wherein the Fe-based magnetic material sintered compact has an oxygen content of 4000 wtppm or less. The present invention provides a sintered compact which enables the formation of a magnetic thin film in a thermally assisted magnetic recording media, and in which the generation of cracks and chipping is suppressed when the sintered compact is processed into a sputtering target or the like.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: October 2, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Shin-ichi Ogino
  • Patent number: 10090136
    Abstract: An oxide sintered body which is obtained by mixing and sintering zinc oxide, indium oxide, gallium oxide and tin oxide. The relative density of the oxide sintered body is 85% or more and the average grain size of crystal grains observed on the surface of the oxide sintered body is less than 10 ?m. X-ray diffraction of the oxide sintered body shows that a Zn2SnO4 phase and an InGaZnO4 phase are the main phases and that an InGaZn2O5 phase is contained in an amount of 3 volume % or less.
    Type: Grant
    Filed: September 10, 2013
    Date of Patent: October 2, 2018
    Assignee: KOBELCO RESEARCH INSTITUTE, INC.
    Inventors: Yuki Tao, Hideo Hata, Akira Nambu, Moriyoshi Kanamaru
  • Patent number: 10077496
    Abstract: A sputtering target includes an indium cerium zinc oxide represented by In2CexZnO4+2x, wherein x=0.5˜2. A method for making a sputtering target includes steps of: mixing indium oxide (In2O3) powder, cerium oxide (CeO2) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250° C. to about 1650° C.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: September 18, 2018
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Shi-Lu Zhan, Xiao-Long Li
  • Patent number: 10049863
    Abstract: Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and an annular-shaped backing plate mounted to the sputtering plate. The backside surface has a plurality of circular grooves which are spaced apart from one another and at least one arcuate channel cutting through the circular grooves and extending from the radially inner region to the radially outer region of sputtering plate. The annular-shaped backing plate defines an open annulus exposing the backside surface of the sputtering plate.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: August 14, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Brian T. West, Michael S. Cox, Jeonghoon Oh
  • Patent number: 10043670
    Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure in an integrated circuit includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; flowing krypton into the plasma processing chamber; and exciting the krypton into a plasma to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: August 7, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jothilingam Ramalingam, Thanh X. Nguyen, Zhiyong Wang, Jianxin Lei, Xianmin Tang
  • Patent number: 10017850
    Abstract: The present invention provides a sputtering target of a Cu—Ga sintered body in which the oxygen content is further reduced and the abnormal discharging can be suppressed, and a method for producing the same. The sputtering target according to the present invention is a sintered body having: a texture in which Na compound phases are dispersed in a matrix with a ? phase and a ? phase of a Cu—Ga alloy; and a component composition made of: 20 atomic % to 30 atomic % of Ga; 0.05 atomic % to 10 atomic % of Na; and the Cu balance and inevitable impurities including elements other than Na in the Na compound, wherein an average grain size of the ? phase is 30 ?m to 100 ?m, and an average grain size of the Na compound phases is equal to or less than 8.5 ?m.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: July 10, 2018
    Assignee: MITSUBISHI MATERIALS CORPORATION
    Inventors: Yuuki Yoshida, Kouichi Ishiyama, Satoru Mori
  • Patent number: 10006117
    Abstract: Provided is a sputtering target-backing plate assembly wherein a Cu—Cr alloy backing plate is bonded to a Ti target via a layer of a strain absorbing material placed at an interface between the Ti target and the Cu—Cr alloy backing plate. In particular, the present invention relates to a sputtering target-backing plate assembly and a production method thereof, the assembly being capable of absorbing strain at the interface between the target and the backing plate in order to prevent deformation (displacement) during sputtering. An object of the present invention is to solve a problem inherent to Titanium (Ti) and a problem in selecting a backing plate compatible with it.
    Type: Grant
    Filed: October 25, 2011
    Date of Patent: June 26, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shiro Tsukamoto, Kazumasa Ohashi
  • Patent number: 9972479
    Abstract: A target assembly is provided which is capable of preventing abnormal discharging from being generated between a projected portion of a backing plate and a side surface of a target, and which is also capable of surely preventing a bonding material that bonds the target and the backing plate together from seeping to the outside. The backing plate has a projected portion which is projected outward beyond an outer peripheral end of the target, and an annular shield plate is disposed to lie opposite to the projected portion so as to enclose the target in a state in which the target assembly is assembled onto a sputtering apparatus (SM). That portion of the backing plate to which the target gets bonded is defined as a bonding portion, and this bonding portion is protruded relative to the projected portion.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: May 15, 2018
    Assignee: ULVAC, INC.
    Inventors: Shinya Nakamura, Yoshihiro Ikeda, Yoshinori Fujii, Yuusuke Miyaguchi
  • Patent number: 9928997
    Abstract: Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.
    Type: Grant
    Filed: February 9, 2015
    Date of Patent: March 27, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Keith A. Miller, Thanh X. Nguyen, Ilya Lavitsky, Randy Schmieding, Prashanth Kothnur
  • Patent number: 9859104
    Abstract: A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70% or less, an orientation rate of a (222) plane is 10% or more, an average crystal grain size is 50 ?m or more and 150 ?m or less, and a variation in a crystal grain size is 30 ?m or less. By controlling the crystal orientation of the target, it is possible to increase the sputter rate, consequently deposit the required film thickness in a short period of time, and improve the throughput. In addition, by controlling the crystal grain size on the sputtering surface of the target, an effect is yielded in that the abnormal discharge during sputtering can be suppressed.
    Type: Grant
    Filed: February 28, 2014
    Date of Patent: January 2, 2018
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shinichiro Senda, Kotaro Nagatsu
  • Patent number: 9834840
    Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: December 5, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Muhammad Rasheed, Rongjun Wang, Zhendong Liu, Xinyu Fu, Xianmin Tang
  • Patent number: 9758860
    Abstract: An indium sputtering target with a short time to attain a stable film deposition rate once sputtering has begun is provided. An indium sputtering target having a surface to be sputtered with an arithmetic average roughness Ra of from 5 ?m to 70 ?m prior to sputtering.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: September 12, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yousuke Endo, Masaru Sakamoto
  • Patent number: 9761420
    Abstract: The present invention relates to novel and improved high purity diffusion bonded copper (Cu) sputtering targets having a Cu purity level of 99.9999% (6N) or greater. The target assemblies of the present invention exhibit sufficient bond strength and microstructural homogeneity, both of which are properties previously considered mutually exclusive for conventional 6N Cu target assemblies. The grain structure is characterized by an absence of alloying elements and the bonded interface is generally flat without any type of interlayer or interlocking arrangement.
    Type: Grant
    Filed: December 13, 2013
    Date of Patent: September 12, 2017
    Assignee: PRAXAIR S.T. TECHNOLOGY, INC.
    Inventors: Jaydeep Sarkar, Paul Gilman
  • Patent number: 9732414
    Abstract: A sputtering target containing, as metal components, 0.5 to 45 mol % of Cr and remainder being Co, and containing, as non-metal components, two or more types of oxides including Ti oxide, wherein a structure of the sputtering target is configured from regions where oxides including at least Ti oxide are dispersed in Co (non-Cr-based regions), and a region where oxides other than Ti oxide are dispersed in Cr or Co—Cr (Cr-based region), and the non-Cr-based regions are scattered in the Cr-based region. An object of this invention is to provide a sputtering target for forming a granular film which suppresses the formation of coarse complex oxide grains and generates fewer particles during sputtering.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: August 15, 2017
    Assignee: JX Nippon Mining and Metals Corporation
    Inventors: Atsushi Sato, Yuki Ikeda, Atsutoshi Arakawa, Hideo Takami, Yuichiro Nakamura
  • Patent number: 9711336
    Abstract: Provided is a backing plate-integrated metal sputtering target comprising a flange part that is formed integrally with a target of which periphery becomes a backing plate, wherein the flange part comprises a structure obtained by repeating partial forging. By increasing the mechanical strength of only the flange part of the target in a backing plate-integrated sputtering target as described above, it is possible to inhibit the deformation of the target during sputtering and a change in the conventional sputtering properties; thereby the formation of thin films having superior uniformity can be realized, and the yield and reliability of semiconductor products, which are being subject to further miniaturization and higher integration, can be improved.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: July 18, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Shiro Tsukamoto
  • Patent number: 9685307
    Abstract: Provided is a tabular sputtering target on which an erosion portion and a non-erosion portion are formed, and the surface area thereof exceeds 100% but is less than 125% of the surface area when the target is assumed to be planar. Also provided is a tabular sputtering target on which an erosion portion and a non-erosion portion are formed comprising one or more concave portions on the target surface region, and the surface area thereof exceeds 100% but is less than 125% of the surface area when the target is assumed to be planar. An inexpensive, small-capacity power supply unit can be used by minimizing the electrical variations in the sputtering circuit as much as possible throughout the lifespan of the target through self sputtering or high power sputtering.
    Type: Grant
    Filed: October 14, 2005
    Date of Patent: June 20, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Hirohito Miyashita
  • Patent number: 9666418
    Abstract: A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: May 30, 2017
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Shiro Tsukamoto, Nobuhito Makino, Atsushi Fukushima, Kazuto Yagi, Eiji Hino
  • Patent number: 9657389
    Abstract: The present invention relates to a target for an ARC source having a first body (3) of a material to be vaporized, which essentially comprises in one plane a surface which is intended to be vaporized, wherein the surface surrounds in this plane a central area, characterized in that in the central area a second body (7) is provided, which is preferably in the form of a disk and is electrically isolated from the first body (3), in such a way that the second body (7) can essentially provide no electrons for maintaining a spark.
    Type: Grant
    Filed: January 10, 2011
    Date of Patent: May 23, 2017
    Assignee: OERLIKON SURFACE SOLUTIONS AG, PFÄFFIKON
    Inventors: Siegfried Krassnitzer, Juerg Hagmann
  • Patent number: 9620339
    Abstract: Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: April 11, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Anantha K. Subramani, Tza-Jing Gung, Prashanth Kothnur, Hanbing Wu
  • Patent number: 9583319
    Abstract: The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field exterior to and near the exterior surface of the emitter. The magnet assembly configuration is selected to provide a magnetic field configuration compatible with the workpiece surface contour. The electromagnet assembly may be a plurality of magnet units, each unit having at least one electromagnet. The magnetic field strength from each magnet unit is separately and electrically adjustable. Each electromagnet in the assembly has a coil of electrically conducting material surrounding a specially shaped core of magnetic material.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: February 28, 2017
    Assignee: BH5773 LTD
    Inventors: Gennady Yumshtyk, Dmitri Ivanov
  • Patent number: 9556511
    Abstract: A rotary sputtering target assembly and method of making the same including a target and a backing tube having a plated bonding surface. The backing tube and the target are bonded together along the plated bonding surface.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: January 31, 2017
    Assignee: MATERION CORPORATION
    Inventor: William Guenley
  • Patent number: 9546418
    Abstract: A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: January 17, 2017
    Assignee: Tosoh SMD, Inc.
    Inventors: Weifang Miao, David B. Smathers, Eugene Y. Ivanov, Erich Theado, Robert S. Bailey, Jeff Hart
  • Patent number: 9534286
    Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: January 3, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Goichi Yoshidome, Ryan Hanson, Donny Young, Muhammad Rasheed, Keith A. Miller
  • Patent number: 9481925
    Abstract: A titanium diboride target contains fractions of one or more metals from the group including iron, nickel, cobalt and chromium as well as carbon. The mean grain size of TiB2 grains is between 1 ?m and 20 ?m, the carbon content is in a range of 0.1 to 5% by weight and the total content of Fe, Ni, Co and/or Cr is in a range of 500 to 3,000 ?g/g. The carbon is distributed in free form at the grain boundaries of the TiB2 grains in such a way that mean distances between individual carbon particles are less than 20 ?m. The porosity is less than 5% by volume.
    Type: Grant
    Filed: May 2, 2011
    Date of Patent: November 1, 2016
    Assignee: Plansee SE
    Inventor: Michael O'Sullivan
  • Patent number: 9437404
    Abstract: A sputtering apparatus is provided with an elongated target holder, a substrate holder having a substrate receiving surface, and a mask assembly having an opening configured between the target holder and the substrate holder. The mask assembly is comprised of a first and second masking part having facing edges that form the opening and are disposed parallel to the substrate receiving surface and independently movable in a direction perpendicular to the length of the target holder and parallel to the substrate receiving surface, or in a direction perpendicular to the substrate receiving surface.
    Type: Grant
    Filed: May 8, 2013
    Date of Patent: September 6, 2016
    Assignee: SEAGATE TECHNOLOGY LLC
    Inventors: Noel Abarra, Tetsuya Endo
  • Patent number: 9418823
    Abstract: A magnetron assembly for a rotary target cathode comprises a rigid support structure, a magnet bar structure movably attached to the rigid support structure, and at least one actuation mechanism coupled to the rigid support structure and configured to change a distance of the magnet bar structure from a surface of a rotatable target cylinder. The magnetron assembly also includes a position indicating mechanism operative to measure a position of the magnet bar structure relative to the surface of the rotatable target cylinder. A communications device is configured to receive command signals from outside of the magnetron assembly and transmit information signals to outside of the magnetron assembly.
    Type: Grant
    Filed: September 6, 2013
    Date of Patent: August 16, 2016
    Assignee: Sputtering Components, Inc.
    Inventors: Daniel Theodore Crowley, Patrick Lawrence Morse, John Robert German
  • Patent number: 9404174
    Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: August 2, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Donny Young, Alan A. Ritchie
  • Patent number: 9334558
    Abstract: A target for the deposition of mixed crystal layers with at least two different metals on a substrate by means of arc vapor deposition (arc PVD), wherein the target includes at least two different metals. To produce mixed crystal layers which are as free as possible of macroparticles (droplets) according to the invention at least the metal with the lowest melting point is present in the target in a ceramic compound, namely as a metal oxide, metal carbide, metal nitride, metal carbonitride, metal oxynitride, metal oxycarbide, metal oxycarbonitride, metal boride, metal boronitride, metal borocarbide, metal borocarbonitride, metal borooxynitride, metal borooxocarbide, metal borooxocarbonitride, metal oxoboronitride, metal silicate or mixture thereof, and at least one metal different from the metal with the lowest melting point is present in the target in elemental (metallic) form.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: May 10, 2016
    Assignee: Walter AG
    Inventor: Veit Schier
  • Patent number: 9334562
    Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 ?m width (e.g., less than about 50 ?m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.
    Type: Grant
    Filed: May 9, 2012
    Date of Patent: May 10, 2016
    Assignee: H.C. STARCK INC.
    Inventors: Gary Alan Rozak, Mark E. Gaydos
  • Patent number: 9328410
    Abstract: In various embodiments, a physical vapor deposition tile arrangement is provided. The physical vapor deposition tile arrangement may include a plurality of physical vapor deposition tiles arranged next to each other; and a resilient structure configured to press the plurality of physical vapor deposition tiles together.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: May 3, 2016
    Assignees: First Solar, Inc., VON ARDENNE GmbH
    Inventors: Bernd Teichert, Klaus Schneider, Christoph Kaiser, Michael Rivkin, George Arthur Proulx
  • Patent number: 9249503
    Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the substrate fed in the first direction; forming a second material film on the first surface of the substrate in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the second material film formed thereon; unrolling and feeding the substrate from the second roll chamber in a second direction from the second roll chamber toward the first roll chamber; forming a first material film on the second material film in a first film formation chamber; taking up the substrate in a roll form in the first roll chamber.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: February 2, 2016
    Assignee: NITTO DENKO CORPORATION
    Inventors: Tomotake Nashiki, Yoshimasa Sakata, Hideo Sugawara, Kenkichi Yagura, Akira Hamada, Yoshihisa Ito, Kuniaki Ishibashi
  • Patent number: 9243320
    Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the fed substrate; forming a first material film on a first surface in a first film formation chamber; guiding the substrate having the first material film formed thereon to a second film formation chamber in a second direction from the second roll chamber toward the first roll chamber; forming, in the second film formation chamber, a second material film on a second surface opposite the first surface of the substrate when it is being guided in the second direction; taking up, in a third roll chamber provided between the first roll chamber and the second roll chamber, the substrate in a roll state.
    Type: Grant
    Filed: July 26, 2012
    Date of Patent: January 26, 2016
    Assignee: NITTO DENKO CORPORATION
    Inventors: Tomotake Nashiki, Yoshimasa Sakata, Hideo Sugawara, Kenkichi Yagura, Akira Hamada, Yoshihisa Ito, Kuniaki Ishibashi
  • Patent number: 9224584
    Abstract: Provided is a sputtering target assembly comprising two or more sputtering target-backing plate bonded bodies B aligned in the width direction, wherein the sputtering target-backing plate bonded bodies B each include a cylindrical target having a diameter of 100 mm or more and a length of 1000 mm or more and composed of three or more target pieces A being divided such that the dividing lines lie in the circumferential direction and being bonded or placed onto a cylindrical or columnar backing plate, wherein the bonded bodies B are arranged to form the sputtering target assembly in such a manner that the dividing lines between the three target pieces of one bonded body B are not present at the same positions of the dividing lines between fractional target pieces of adjacent another bonded body B. It is an object of the present invention to provide a sputtering target assembly that can reduce defects due to occurrence of particles originated from the piece-bonding area.
    Type: Grant
    Filed: September 25, 2012
    Date of Patent: December 29, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kozo Osada, Toshiya Kurihara
  • Patent number: 9210788
    Abstract: There is provided a power supply apparatus which is easy in attempting to unify the thickness distribution of a thin film to be formed on the surface of a substrate even at the time of charging pulsed potential at a low frequency to targets that make respective pairs. The power supply apparatus of this invention has: a first discharge circuit which alternately charges predetermined potential to a pair of targets that are in contact with a plasma at a predetermined frequency; and a second discharge circuit which charges predetermined potential between the ground and the target, out of the pair of targets, that is not receiving output from the first discharge circuit.
    Type: Grant
    Filed: June 17, 2009
    Date of Patent: December 8, 2015
    Assignee: ULVAC, INC.
    Inventors: Shinobu Matsubara, Yoshikuni Horishita, Hidenori Yoda, Yoshio Yanagiya, Takeo Toda
  • Patent number: 9206505
    Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
    Type: Grant
    Filed: April 27, 2012
    Date of Patent: December 8, 2015
    Assignee: NITTO DENKO CORPORATION
    Inventors: Tomotake Nashiki, Hideo Sugawara, Tomonori Noguchi, Akira Hamada, Yoshihisa Ito, Kuniaki Ishibashi
  • Patent number: 9165750
    Abstract: A high purity copper-manganese alloy sputtering target containing 0.05 to 20 wt % of Mn and, excluding additive elements, remainder being Cu and unavoidable impurities, wherein the target contains 0.001 to 0.06 wtppm of P and 0.005 to 5 wtppm of S, and further contains Ca and Si, and a total content of P, S, Ca, and Si is 0.01 to 20 wtppm. The incorporation of appropriate amounts of Mn as well as Ca, P, Si, and S in copper improves the machinability that is required in the stage of producing a target to facilitate the manufacture (workability) of the target, improves the smoothness of the target surface, and inhibits the generation of particles during sputtering. Thus, provided is a high purity copper-manganese alloy sputtering target which is particularly useful for improving the yield and reliability of semiconductor products that progress toward miniaturization and integration.
    Type: Grant
    Filed: January 4, 2013
    Date of Patent: October 20, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Kenichi Nagata, Tomio Otsuki, Takeo Okabe, Nobuhito Makino, Atsushi Fukushima
  • Patent number: 9150956
    Abstract: Aluminum or aluminum alloy sputter targets and methods of making same are provided. The pure aluminum or aluminum alloy is mechanically worked to produce a circular blank, and then the blank is given a recrystallization anneal to achieve desirable grain size and crystallographic texture. A 10-50% additional strain is provided to the blank step after the annealing to increase the mechanical strength. Further, in a flange area of the target, the strain is greater than in the other target areas with the strain in the flange area being imparted at a rate of about 20-60% strain. The blank is then finished to form a sputtering target with desirable crystallographic texture and adequate mechanical strength.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: October 6, 2015
    Assignee: Tosoh SMD, Inc.
    Inventors: Weifang Miao, David B. Smathers, Robert S. Bailey
  • Patent number: 9095901
    Abstract: An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.
    Type: Grant
    Filed: July 10, 2014
    Date of Patent: August 4, 2015
    Assignee: TANAKA KIKINZOKU KOGYO K.K.
    Inventors: Takanobu Miyashita, Yasuyuki Goto, Takamichi Yamamoto, Ryousuke Kushibiki, Masahiro Aono, Masahiro Nishiura
  • Patent number: 9062371
    Abstract: A sputtering target-backing plate assembly obtained by bonding a target material of Mg to a backing plate of Cu—Cr alloy, wherein the target material and the backing plate are bonded via a layer of Ni or an alloy comprising Ni as a main component at the interface therebetween. An object of the present invention is to provide a sputtering target-backing plate assembly that is used when magnesium (Mg) is the sputtering target material, and to resolve problems inherent in magnesium (Mg) and problems related to the selection of a backing plate to be compatible with magnesium by improving the bonding strength between the target and the backing plate in order to improve the sputtering efficiency.
    Type: Grant
    Filed: October 4, 2010
    Date of Patent: June 23, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventor: Yoshimasa Koido
  • Patent number: 9034155
    Abstract: Provided is an inorganic-particle-dispersed sputtering target in which inorganic particles are dispersed in a Co base material, wherein the inorganic particles have an electric resistivity of 1×101 ?·m or less and the volume ratio of the inorganic particles in the target is 50% or less. The sputtering target thus adjusted is advantageous in that, when sputtering is performed using a magnetron sputtering device comprising a DC power source, the inorganic particles are less charged, and arcing occurs less frequently. Accordingly, by using the sputtering target of the present invention, the occurrence of particles attributable to the arcing reduces, and a significant effect of improving the yield in forming a thin film is obtained.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: May 19, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Atsushi Sato, Yuichiro Nakamura
  • Patent number: 9034154
    Abstract: A sputtering target with low generation of particles in which oxides, carbides, nitrides, borides, intermetallic compounds, carbonitrides, and other substances without ductility exist in a matrix phase made of a highly ductile substance at a volume ratio of 1 to 50%, wherein a highly ductile and conductive metal coating layer is formed on an outermost surface of the target. Provided are a sputtering target capable of improving the target surface in which numerous substances without ductility exist and preventing or inhibiting the generation of nodules and particles during sputtering, and a method of producing such a sputtering target.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: May 19, 2015
    Assignee: JX Nippon Mining & Metals Corporation
    Inventors: Yuichiro Nakamura, Akira Hisano, Junnosuke Sekiguchi
  • Patent number: 9034151
    Abstract: An alignment film forming apparatus and a method are provided to form an alignment film for a liquid crystal in a single process of simultaneously executing a film deposition process of ion beam sputtering and an alignment process. The method greatly restricts the size of a substrate. An alignment film forming apparatus includes a target disposed on a top surface side of a substrate and having a sputtering surface defining a sharp angle to the top surface of the substrate, a transfer table that transfers the substrate in a predetermined direction, and an ion source disposed on the top surface side of the substrate in such a way that an ion beam is irradiated on the sputtering surface of the target. An ion beam reflected at the sputtering surface is irradiated on a sputtering film formed on the substrate.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: May 19, 2015
    Assignee: International Business Machines Corporation
    Inventors: Shoichi Doi, Tatsuya Nishiwaki
  • Publication number: 20150129421
    Abstract: A hybrid deposition system includes a chamber, a pump, a gas source, a cathodic arc source, a high power impulse magnetron sputtering source and a substrate. The pump is connected with an interior of the chamber for changing a pressure of the interior of the chamber. The gas source is connected with the interior of the chamber for providing a gas into the interior of the chamber. The cathodic arc source is connected with the chamber and includes a first target disposed in the interior of the chamber. The high power impulse magnetron sputtering source is connected with the chamber and includes a second target disposed in the interior of the chamber. The substrate is disposed in the interior of the chamber and corresponded to the first target and the second target.
    Type: Application
    Filed: May 18, 2014
    Publication date: May 14, 2015
    Applicant: MINGDAO UNIVERSITY
    Inventors: Chi-Lung CHANG, Wan-Yu WU, Pin-Hung CHEN, Wei-Chih CHEN, Da-Yung WANG
  • Patent number: 9028658
    Abstract: A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance consisting of copper and impurities, wherein the impurities are controlled to include a total of 40 ppm or less of metallic impurities, 10 ppm or less of oxygen, 5 ppm or less of nitrogen, 5 ppm or less of hydrogen, and 10 ppm or less of carbon.
    Type: Grant
    Filed: August 17, 2006
    Date of Patent: May 12, 2015
    Assignee: Mitsubishi Materials Corporation
    Inventors: Shoji Aoki, Masahiko Wada, Masato Koide
  • Patent number: 9028660
    Abstract: A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the magnetic array and acts as a cathode (2a); an anode (2b); the magnetic array being arranged to create an asymmetric plasma distribution with respect to the normal angle of incidence to a substrate (3); and means (1b) for enhancing the magnetic field to produce a relatively low impedance path for electrons flowing from the cathode (2a) to the anode (2b).
    Type: Grant
    Filed: August 14, 2008
    Date of Patent: May 12, 2015
    Assignee: Gencoa Ltd
    Inventor: Victor Bellido-Gonzalez