Specified Target Particulars Patents (Class 204/298.12)
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Publication number: 20130220797Abstract: A method for operating a moving magnet magnetron is provided enhanced target utilization. A magnet pack is moved in a first 2-D motion profile with a variable velocity. The magnet pack is then translated in a second 2-D motion profile that varies relative to the first profile. This process moving and translating is repeated to provide enhanced target utilization. These varied movement and translation profiles preclude the formation of a diamond-shaped erosion area common to the prior art. Representative to such profiles are intersecting sigmoidal curves. The resultant target is characterized by a metal from that has better target utilization as the wear pattern precludes the diamond shaped erosion area common to the prior art and instead has a multiple erosion peaks.Type: ApplicationFiled: May 19, 2011Publication date: August 29, 2013Applicant: GENERAL PLASMA, INC.Inventor: Phong Ngo
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Publication number: 20130220796Abstract: A composite target and method for manufacturing the same are described, which manufactures the composite target according an etching condition of a waste target. The waste target is generated after an original target at least haying a substrate layer and a metal layer is processed through a sputtering process by a sputtering apparatus with a first magnetic field line distribution. By determining the etching condition caused by the first magnetic field line distribution, a magnetic layer with a second magnetic field line distribution is decided to dispose on the original target. The metal layer is formed on the substrate layer and/or the magnetic layer. The substrate layer, the magnetic layer and the metal layer are combined by a connection layer to form the composite target. The composite target can provide the second magnetic field line distribution to adjust the first magnetic field line distribution.Type: ApplicationFiled: February 23, 2013Publication date: August 29, 2013Applicant: SUMIKA TECHNOLOGY CO., LTD.Inventor: SUMIKA TECHNOLOGY CO., LTD.
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Publication number: 20130213801Abstract: Provided is an apparatus that includes a molding die for producing a sintered body. The molding die is configured for cold isostatic pressing and includes a knockdown mold frame comprised of plural frame members and a bottom plate provided in contact with the knockdown mold frame. An upper punch is provided to be movable along the inner surface of the knockdown mold frame. The frame members configured to be movable relative to each other to accommodate an expansion of a green body which takes place at the time of reducing the pressure after the completion of pressing.Type: ApplicationFiled: March 18, 2013Publication date: August 22, 2013Inventors: Kenichi ITOH, Masami MESUDA, Hitoshi NAGAYAMA, Tetsuo SHIBUTAMI, Shunsuke YATSUNAMI
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Publication number: 20130206589Abstract: The present invention provides a sputtering target having alarm function. The sputtering target comprises: a target body including a target material and having a bonding plane; a backing body bonded with the bonding plane of the target body; and at least one alarm body embedded in the target body. Wherein, a length of each alarm body, ratios of an area of each alarm body and the sum of area(s) of the at least one alarm body projected onto the bonding plane relative to an area of the bonding plane are controlled in a suitable range. Thus, the bonding strength and the heat-removing efficiency of the sputtering target can be maintained, and the distinguishable material of the alarm body can evolve a gas component distinguishable from a sputtering environment serving as an alarm signal for stopping the sputtering process in time.Type: ApplicationFiled: February 14, 2012Publication date: August 15, 2013Applicant: Solar Applied Materials Technology Corp.Inventors: Shu-Hua Hu, Ming-Chang Lu, Pai-Ying Su, Jung-Sheng Chen, Hsin-Chun Yin
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Publication number: 20130199929Abstract: A coating source for physical vapor deposition has at least one component, which has been produced from at least one pulverulent starting material in a powder metallurgy production process and at least one ferromagnetic region embedded in the component. The at least one ferromagnetic region, is introduced into the component and fixedly connected to the component during the powder metallurgy production process.Type: ApplicationFiled: April 12, 2011Publication date: August 8, 2013Applicant: PLANSEE SEInventors: Peter Polcik, Conrad Polzer, Matthias Perl, Stefan Schlichtherle, Georg Strauss
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Patent number: 8500976Abstract: A sputtering magnetron (300) insertable in a rotatable target is described. The magnetron is designed around a single piece, multiwalled tube (102, 202) with compartments (316, 316?, 318, 318?) extending over the length of the tube. The multiwalled tube gives a much stiffer magnetron carrier structure compared to prior art magnetrons. As a result, the magnetic field generator can be mounted inside a compartment and the distance between magnets and target surface is easily adjustable as the tube is much stiffer than the generator. Additionally, the coolant channels can be incorporated inside the tube and close to the outer wall of the tube so that coolant can be supplied in the vicinity of the magnetic field generator. The increased stiffness of the magnetron allows the target tube to be carried by the magnetron—not the other way around—at least during part of the useful life of the target.Type: GrantFiled: May 6, 2009Date of Patent: August 6, 2013Assignee: Soleras Advanced Coatings BVBAInventors: Parsifal Goderis, Ivan Van De Putte
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Patent number: 8500972Abstract: A rotatable cylindrical magnetron sputtering device that includes a cathode body defining a magnet receiving chamber and a cylindrical target assembly surrounding the cathode body, wherein the cylindrical target assembly is rotatable around the cathode body. The cylindrical target assembly includes a hollow mandrel and a target portion mounted around and spaced away from the hollow mandrel portion so as to create a space gap between the hollow mandrel and the target portion, wherein the space gap may be greater than 0.002 inch and less than 0.020 inch.Type: GrantFiled: April 9, 2009Date of Patent: August 6, 2013Assignee: Angstrom Sciences, Inc.Inventor: Mark A. Bernick
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Publication number: 20130192981Abstract: A rotary deposition target bonded to a backing tube such that the bonding material is applied only at the ends of the rotary sputtering target to form a gap between the rotary sputtering target and the backing tube to enable a target cooling fluid used during the deposition process to contact the target directly and to provide a hermetic seal to contain the cooling fluid within the gap and prevent the fluid from being exposed to the environment within the deposition chamber.Type: ApplicationFiled: February 1, 2013Publication date: August 1, 2013Applicant: Materion Advanced Materials Technologies and Services Inc.Inventor: Materion Advanced Materials Technologies and Services Inc.
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Patent number: 8496792Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.Type: GrantFiled: March 28, 2008Date of Patent: July 30, 2013Assignees: National University Corporation Tohoku University, Tokyo Electron LimitedInventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
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Publication number: 20130186752Abstract: To provide a target device that can easily be reused in which the amount of gas discharge is small. The present invention is a target device including a backing plate and a target plate that is fixed to the backing plate with a metal brazing material, in which a protective film made of a TiN thin film in which a proportion of (111) plane is at a maximum is formed on an exposed portion of the backing plate. The discharge amount of gas is small, and the brazing material that adheres when fixing the target plate can be easily peeled off.Type: ApplicationFiled: December 11, 2012Publication date: July 25, 2013Applicant: ULVAC, INC.Inventor: ULVAC, Inc.
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Publication number: 20130186751Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.Type: ApplicationFiled: March 13, 2013Publication date: July 25, 2013Applicant: APPLIED MATERIALS, INC.Inventor: Applied Materials, Inc.
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Publication number: 20130175166Abstract: A magnetron sputtering target containing a ferromagnetic metal element includes a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases containing the ferromagnetic metal element, the plurality of non-magnetic phases containing a different constituent element from each other or containing constituent elements at different ratios from each other; and an oxide phase. Regions of the magnetic phase and the plurality of non-magnetic phases are separated from each other by the oxide phase.Type: ApplicationFiled: July 29, 2011Publication date: July 11, 2013Applicant: TANAKA KIKINZOKU KOGYO K.K.Inventors: Takanobu Miyashita, Yasuyuki Goto
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Publication number: 20130161188Abstract: The invention describes a method for bonding components of a sputtering target, comprising the following steps: providing a first component and a second component, the harder of which has undercut protrusions; positioning them against each other; and pressing them towards each other resulting in a plastic deformation of the material of at least one of the two components, filling the undercuts thereby creating interlocking, as well as the bonded assembly so created, and its recycling. No step creating bonding other than interlocking on a major part of the bonded surface area is necessary.Type: ApplicationFiled: June 17, 2011Publication date: June 27, 2013Inventor: Robert Linsbod
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Patent number: 8470145Abstract: There is provided an inexpensive cathode unit which is simple in construction and is capable of forming a film at good coating characteristics relative to each of micropores of high aspect ratio throughout an entire surface of a substrate. There is also provided a sputtering apparatus provided with the cathode unit. The cathode unit of this invention has a holder formed with one or more recessed portions on one surface thereof. Inside the recessed portions there are mounted bottomed cylindrical target members from the bottom side thereof. Into a space inside each of the target members there are built magnetic field generating means for generating magnetic fields.Type: GrantFiled: June 23, 2009Date of Patent: June 25, 2013Assignee: Ulvac, Inc.Inventors: Naoki Morimoto, Tomoyasu Kondo, Daisuke Mori, Kyuzo Nakamura
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Patent number: 8460602Abstract: A sintering method with uniaxial pressing includes: a powder filling step of disposing a spent target in an inner space of a frame jig having the inner space piercing in a uniaxial direction, and filling the inner space with a raw material powder for a target to cover an erosion part side of the spent target with the raw material powder for a target, a cushioning-material disposition step of disposing a deformable cushioning material so that the raw material powder for a target with which the inner space has been filled in the powder filling step is sandwiched between the spent target and the deformable cushioning material; and a sintering step of pressing the raw material powder for a target with which the inner space has been filled and the spent target in the uniaxial direction through the cushioning material and sintering them.Type: GrantFiled: December 17, 2009Date of Patent: June 11, 2013Assignee: Tanaka Holdings Co., LtdInventors: Toshiya Yamamoto, Takanobu Miyashita, Osamu Itoh
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Patent number: 8460521Abstract: A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.Type: GrantFiled: September 28, 2010Date of Patent: June 11, 2013Assignee: Primestar Solar, Inc.Inventors: Scott Daniel Feldman-Peabody, Robert Dwayne Gossman, Russell Weldon Black, Patrick Lynch O'Keefe
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Publication number: 20130140173Abstract: This invention utilizes a co-extrusion or co-drawing process to directly bond a tubular target to an inner backing tube. The co-extrusion or co-drawing process reduces the inner and outer diameters of the outer tubular target to cause portions of the target to protrude and at least partially fill into grooves along the inner backing tube. The filling causes the target to interlock to the backing plate.Type: ApplicationFiled: June 6, 2012Publication date: June 6, 2013Inventors: Séverin Stéphane Gérard Tierce, Paul S. Gilman
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Publication number: 20130140522Abstract: A light-emitting panel includes: a substrate; and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region, a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, and when the light-emitting functional multilayer is viewed in a layering direction thereof, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent sub-pixels.Type: ApplicationFiled: January 10, 2013Publication date: June 6, 2013Applicant: PANASONIC CORPORATIONInventor: PANASONIC CORPORATION
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Patent number: 8453487Abstract: A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed.Type: GrantFiled: October 9, 2009Date of Patent: June 4, 2013Assignee: Tosoh SMD, Inc.Inventors: Eugene Y. Ivanov, Erich Theado, David B. Smathers
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Patent number: 8449818Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.Type: GrantFiled: June 30, 2010Date of Patent: May 28, 2013Assignee: H. C. Starck, Inc.Inventors: Gary Alan Rozak, Mark E. Gaydos, Patrick Alan Hogan, Shuwei Sun
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Publication number: 20130126343Abstract: The present invention discloses a sputter target structure of a transparent conductive layer, which comprises a middle plate potion, two short-edge thickness-variation end portions, and two long-edge thickness-variation end portions. The thickness of the short-edge thickness-variation end portion is larger than the thickness of the middle plate potion; the thickness of the long-edge thickness-variation end portion is smaller than the thickness of the middle plate potion. Furthermore, the short-edge thickness-variation end portion has an end surface of non-planer shape. The sputter target structure of the transparent conductive layer of the present invention is designed with different thickness variation projects in the different portions according to an actual consumption situation of a sputter target, so that it can decrease a waste of material of the sputter target during operation process, so as to save a cost of the transparent conductive layer.Type: ApplicationFiled: November 24, 2011Publication date: May 23, 2013Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventor: Lin Chen
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Publication number: 20130118898Abstract: A target assembly comprising—a support body having a carrying surface;—a sputtering target having an attaching surface, said carrying surface and said attaching surface being arranged in opposing facing relation to one another, thereby defining an intermediate space between said carrying surface and said attaching surface; and—a bonding material disposed in the intermediate space for binding said attaching surface to said carrying surface,—wherein distinct areas of one or both of said attaching surface and said carrying surface are selectively, superficially treated to enhance the bonding strength of said bonding material in said distinct areas.Type: ApplicationFiled: May 23, 2011Publication date: May 16, 2013Applicant: UMICOREInventors: Jong-Won Shin, Nikolaus Margadant, Klaus Leitner
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Publication number: 20130112554Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.Type: ApplicationFiled: October 26, 2012Publication date: May 9, 2013Applicant: Applied Materials, Inc.Inventors: MUHAMMAD RASHEED, Keith A. Miller, Rongjun Wang
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Publication number: 20130112556Abstract: Provided is a sputtering target and/or a coil disposed at the periphery of a plasma-generating region for confining plasma. The target and/or the coil has a surface to be eroded having a hydrogen content of 500 ?L/cm2 or less. In dealing with reduction in the hydrogen content of the surface of the target and/or the coil, the process of producing the target and/or the coil, in particular, the conditions for heating the surface of the target and/or the coil, which is thought to be cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, the present invention provides a target and/or a coil that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity and provides a method of producing the target and/or the coil.Type: ApplicationFiled: July 27, 2011Publication date: May 9, 2013Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Kenichi Nagata, Nobuhito Makino
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Patent number: 8435392Abstract: Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.Type: GrantFiled: February 15, 2012Date of Patent: May 7, 2013Assignee: Applied Materials, Inc.Inventors: Lara Hawrylchak, Xianmin Tang, Vijay Parhke, Rongjun Wang
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Patent number: 8435388Abstract: The invention is a method for obtaining a reactive sputtering process with a reduced or eliminated hysteresis behavior. This is achieved by employing a target made from a mixture of metal and compound materials. In the method according to the present invention, the fraction of compound material is large enough to eliminate or significantly reduce the hysteresis behavior of the reactive sputtering process and enable a stable deposition of compound films at a rate significantly higher than what is possible from a target completely made from compound material.Type: GrantFiled: October 31, 2006Date of Patent: May 7, 2013Assignee: Cardinal CG CompanyInventors: Klaus Hartig, Sören Berg, Tomas Nyberg
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Patent number: 8435604Abstract: A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn2+-containing inorganic oxide material such as, for example, SnO, SnO+P2O5 and SnO+BPO4.Type: GrantFiled: April 6, 2010Date of Patent: May 7, 2013Assignee: Corning IncorporatedInventors: Bruce Gardiner Aitken, Chong Pyung An, Mark Alejandro Quesada
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Patent number: 8425696Abstract: Provided is a tantalum or a tantalum alloy target capable of shortening the burn-in time and minimizing the fluctuation in the deposition speed throughout the target life, whereby the production efficiency of semiconductors in the sputtering process can be improved and stabilized, and the production cost can be significantly reduced. With tantalum or tantalum-based alloy sputtering target, provided is a sputtering target, wherein FWHM (full width of half maximum) of a {200} crystal plane measured by X-ray diffraction of the sputtered outermost surface is 0.1 to 0.6°, and wherein the variation of FWHM is within ±0.05°.Type: GrantFiled: September 7, 2006Date of Patent: April 23, 2013Assignee: JX Nippon Mining & Metals CorporationInventors: Kunihiro Oda, Atsushi Fukushima
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Patent number: 8425741Abstract: This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).Type: GrantFiled: July 6, 2007Date of Patent: April 23, 2013Assignee: Aviza Technology LimitedInventors: Gary Proudfoot, Christopher David George, Paulo Edurado Lima, Gordon Robert Green, Robert Kenneth Trowell
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Publication number: 20130092533Abstract: A sputter deposition apparatus can sputter a wider surface area of a sputtering surface of a target in comparison to an area that could be sputtered by a conventional apparatus. An adhesion-preventing member surrounding the outer periphery of a sputtering surface of a target made of a metal material is formed by insulating ceramic. The target is sputtered while moving a magnet device between a position where the entire outer periphery of an outer peripheral magnet is on the inside of the outer periphery of the sputtering surface and another position where a part of the outer periphery of the outer peripheral magnet protrudes out to the outside of the outer periphery of the sputtering surface.Type: ApplicationFiled: November 29, 2012Publication date: April 18, 2013Applicant: ULVAC, INC.Inventor: ULVAC, INC.
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Publication number: 20130092528Abstract: A film-forming device is provided, including: a chamber in which a substrate is disposed; a target, disposed within the chamber, which contains a material from which a film is formed; a substrate-supporting table disposed inside the chamber; driving unit that rotates the substrate-supporting table; a sputtering cathode that causes sputtered particles to be incident on the substrate from an oblique direction; and a control unit that controls the driving unit by setting a rotation period so that a sputtering film formation time required to form a film having a desired thickness is an integer multiple of a rotation period of the substrate-supporting table.Type: ApplicationFiled: June 30, 2011Publication date: April 18, 2013Applicant: ULVAC, INC.Inventors: Yoshinori Fujii, Shinya Nakamura
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Patent number: 8419911Abstract: A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.Type: GrantFiled: January 26, 2006Date of Patent: April 16, 2013Assignee: Panasonic CorporationInventors: Hideki Yamashita, Takafumi Okuma, Hiroshi Hayata, Hitoshi Yamanishi, Tadashi Kimura, Hirokazu Nakaue
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Publication number: 20130087453Abstract: The present invention relates to a method and apparatus of forming a sputter target assembly having a controlled solder thickness. In particular, the method includes the introduction of a bonding foil, between the backing plate and the sputter target, wherein the bonding foil is an ignitable heterogeneous stratified structure for the propagation of an exothermic reaction.Type: ApplicationFiled: November 26, 2012Publication date: April 11, 2013Inventors: Paul S. Gilman, Binu Mathew, Brian J. O'Hara, Thomas J. Hunt, Peter McDonald, Holger J. Koenigsmann
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Publication number: 20130081944Abstract: In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.Type: ApplicationFiled: September 27, 2012Publication date: April 4, 2013Applicant: H.C. STARCK, INC.Inventor: H.C. Starck, Inc.
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Publication number: 20130081943Abstract: In various embodiments, joined sputtering targets are formed at least in part by spray deposition of the sputtering material and/or welding.Type: ApplicationFiled: September 27, 2012Publication date: April 4, 2013Applicant: H.C. Starck, Inc.Inventor: H.C. Starck, Inc.
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Publication number: 20130081938Abstract: A magnetron sputtering apparatus in which a target is disposed to face a substrate includes a magnet array body including a magnet group arranged on a base body, and a rotating mechanism for rotating the magnet array body around an axis perpendicular to the substrate. In the magnet array body, N poles and S poles constituting the magnet group are arranged to be spaced from each other along a surface facing the target such that a plasma is generated based on a drift of electrons by a cusp magnetic field. Magnets located on the outermost periphery of the magnet group are arranged in a line to prevent the electrons from being released from constraint of the cusp magnetic field and jumping out of the cusp magnetic field. A distance between the target and the substrate during sputtering is equal to or less than 30 mm.Type: ApplicationFiled: September 28, 2012Publication date: April 4, 2013Inventors: Shigeru MIZUNO, Hiroyuki TOSHIMA, Atsushi GOMI, Tetsuya MIYASHITA, Tatsuo HATANO, Yasushi MIZUSAWA
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Patent number: 8409407Abstract: Methods are generally provided for sputtering thin films on individual substrates. Individual substrates can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates can be conveyed into a sputtering chamber and past a planar magnetron continuously sputtering a target by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates defining a surface having a surface area of about 1000 cm2 to about 2500 cm2.Type: GrantFiled: April 22, 2010Date of Patent: April 2, 2013Assignee: Primestar Solar, Inc.Inventors: Sean Timothy Halloran, Robert Dwayne Gossman, Russell Weldon Black
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Patent number: 8409498Abstract: A sputter target material which is of a sintered material, wherein the sputter target material consists of 0.5 to 50 atomic % in total of at least one metal element (M) selected from the group of Ti, Zr, V, Nb and Cr, and the balance of Mo and unavoidable impurities, and has a microstructure seen at a perpendicular cross section to a sputtering surface, in which microstructure oxide particles exist near a boundary of each island of the metal element (M), and wherein the maximum area of the island, which is defined by connecting the oxide particles with linear lines so as to form a closed zone, is not more than 1.0 mm2.Type: GrantFiled: June 5, 2009Date of Patent: April 2, 2013Assignee: Hitachi Metals, Ltd.Inventors: Keisuke Inoue, Tsuyoshi Fukui, Shigeru Taniguchi, Norio Uemura, Katsunori Iwasaki, Kazuya Saitoh
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Patent number: 8398826Abstract: The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.Type: GrantFiled: March 29, 2011Date of Patent: March 19, 2013Assignee: Applied Materials, Inc.Inventor: Yan Ye
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Patent number: 8398833Abstract: Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.Type: GrantFiled: April 14, 2009Date of Patent: March 19, 2013Assignee: Honeywell International Inc.Inventors: Eal H. Lee, Jaeyeon Kim
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Publication number: 20130056352Abstract: A medium frequency magnetron sputtering device comprises a vacuum chamber, a rotary rack located in the center of the vacuum chamber, a pair of targets located between the inner wall of the vacuum chamber and the rotary rack, an inner partition, and at least one outer partition. The inner partition is located between the inner wall of the vacuum chamber and the pair of targets, the at least one outer partition is moveable and prevents the deposition of any sputtered target atoms on the rotary rack during the cleaning target process.Type: ApplicationFiled: April 6, 2012Publication date: March 7, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., HONG FU JIN PRECISION INDUSTRY (ShenZhen) CO., LTD.Inventors: HSIN-PEI CHANG, TENG-TSUNG HUANG, LI-QUAN PENG
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Patent number: 8390122Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.Type: GrantFiled: September 19, 2011Date of Patent: March 5, 2013Assignee: Primestar Solar, Inc.Inventor: Scott Daniel Feldman-Peabody
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Publication number: 20130043120Abstract: A sputtering target is provided that includes a planar backing plate and a target material formed over the planar backing plate and including an uneven sputtering surface including thick portions and thin portions and configured in conjunction with a sputtering apparatus such as a magnetron sputtering tool with a fixed magnet arrangement. The uneven surface is designed in conjunction with the magnetic fields that will be produced by the magnet arrangement such that the thicker target portions are positioned at locations where target erosion occurs at a high rate. Also provided is the magnetron sputtering system and a method for utilizing the target with uneven sputtering surface such that the thickness across the target to become more uniform in time as the target is used.Type: ApplicationFiled: August 18, 2011Publication date: February 21, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chia-Liang CHUEH, Kuo-Chou CHEN, Ren-Dou LEE, Hsien-Liang MENG, Chun-Wei LIN
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Publication number: 20130037407Abstract: In-line metalizer assemblies can include an external rotating actuator exchange that can be operable to exchange one or more parts between a conveyor system and a vacuum chamber, and an internal rotating actuator exchange within the vacuum chamber that can be operable to receive the one or more parts from the external rotating actuator exchange, transition the one or more parts to a sputter coater integrated with the vacuum chamber for metallizing, and return metalized one or more parts to the external rotating actuator exchange such that the external rotating actuator exchange can return the metalized one or more parts to the conveyor system.Type: ApplicationFiled: October 19, 2012Publication date: February 14, 2013Applicant: Marca Machinery, LLCInventor: Marca Machinery, LLC
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Publication number: 20130032476Abstract: A magnetron sputtering device includes a cathode source assembly, and a target assembly removably coupled to the cathode source assembly. The cathode source assembly comprises a rotatable drive shaft, and a water feed tube located in the drive shaft and coupled to a tube support. The target assembly comprises a rotary cathode including a rotatable target cylinder, the rotary cathode removably mounted to the drive shaft. A magnet bar inside of the target cylinder is coupled to an end portion of the feed tube. A sweeping mechanism coupled to the magnet bar includes a control motor. An indexing pulley is coupled to the control motor, and a magnet bar pulley is coupled to the indexing pulley. The magnet bar pulley is affixed to the tube support such that any motion of the magnet bar pulley is translated to the magnet bar through the tube support and the feed tube.Type: ApplicationFiled: July 31, 2012Publication date: February 7, 2013Applicant: Sputtering Components, Inc.Inventors: Daniel Theodore Crowley, Michelle Lynn Neal
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Publication number: 20130026035Abstract: A sputter device including a plurality of targets having magnetism; a reflector having magnetism and arranged between neighboring targets of the plurality of targets; a wave guide having magnetism and arranged adjacent the targets, the wave guide forming a guide space for guiding microwaves; and a limiter having magnetism and arranged adjacent the wave guide, the limiter forming an electron cyclotron resonance area together with the targets, the reflector, and the wave guide.Type: ApplicationFiled: April 13, 2012Publication date: January 31, 2013Inventors: Yong-Sup CHOI, Myung-Soo Huh
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Patent number: 8357267Abstract: The present invention has been achieved to provide a method and apparatus for speedily and homogeneously fabricating polycrystalline silicon films or similar devices at low cost. A silicon target is attached to a water-cooled electrode, while a substrate made of a desired material is set on the other, heated electrode. When atmospheric pressure hydrogen plasma is generated between the two electrodes, silicon atoms will be released from the low-temperature target on the side and deposited on the high-temperature substrate. A doped silicon film can be created by using a target containing a doping element. Since there is no need to handle expensive and harmful gases (e.g. SiH4, B2H6 and PH3), the apparatus can be installed and operated at lower costs. In an application of the film producing method according to the present invention, an objective substance can be selectively purified from a target containing a plurality of substances.Type: GrantFiled: September 8, 2006Date of Patent: January 22, 2013Assignee: Sharp Kabushiki KaishaInventors: Hiromasa Ohmi, Kiyoshi Yasutake, Hiroaki Kakiuchi
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Patent number: 8357259Abstract: According to the method, drops of an adhesive material are deposited on one of the plates, with the drops being spaced from one another. A grid having a predefined thickness lower than that of the drops is applied to the plate receiving the drops. A perpendicular and uniform pressure is applied to at least one of the plates, so that the drops spread and come into contact with the opposing sides of the two plates. The spacing of the drops is defined so that after spreading under the pressure applied, air is not trapped between the drops.Type: GrantFiled: March 3, 2008Date of Patent: January 22, 2013Assignee: H.E.F.Inventors: Michel Martin, Philippe Maurin-Perrier, Christophe Heau, Olivier Blandenet
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Publication number: 20130017625Abstract: In a method for fabricating a magnetic tunnel junction, a first magnetic layer is formed on a substrate, and a tunnel insulating layer is formed on the first magnetic layer. Subsequently, a second magnetic layer is formed on the tunnel insulating layer. In the method, the first magnetic layer is formed by periodically sputtering a magnetic target while a metal target is continuously sputtered.Type: ApplicationFiled: December 23, 2011Publication date: January 17, 2013Inventor: Won Joon CHOI
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Patent number: RE44239Abstract: Disclosed is an electrode for semiconductor devices capable of suppressing the generation of hillocks and reducing the resistivity, which is suitable for an active matrixed liquid crystal display and the like in which a thin film transistor is used; its fabrication method; and a sputtering target for forming the electrode film for semiconductor devices. The electrode for semiconductor devices is made of an Al alloy containing the one or more alloying elements selected from Fe, Co, Ni, Ru, Rh and Ir, in a total amount from 0.1 to 10 At %, or one or more alloying elements selected from rare earth elements, in a total amount from 0.05 to 15 at %.Type: GrantFiled: May 9, 2006Date of Patent: May 28, 2013Assignee: Kobelco Research Institute, Inc.Inventors: Seigo Yamamoto, Katsutoshi Takagi, Eiji Iwamura, Kazuo Yoshikawa, Takashi Oonishi