Abstract: A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder having a lateral surface, a middle part, a first end region and a second end region opposite to the first end region, wherein at least one of the first and the second end regions has a maximum outer diameter substantially equal to or less than an outer diameter of the middle part.

Abstract: A rotatable target base device for sputtering installations is provided, wherein the target base device is adapted for receiving thereon a solid target cylinder, the rotatable target base device comprising a target base cylinder having a lateral surface, a middle part, a first end region and a second end region opposite to the first end region, wherein at least one of the first and the second end regions has a maximum outer diameter substantially equal to or less than the outer diameter of the middle part.

Abstract: The invention includes backing plates having coolant deflectors with at least a portion of each of the deflectors being nonlinear. Projections projecting from the backing plate are configured to insert into openings within a sputtering target. The invention includes targets having at least one opening to receive a fastener extending into the target through a back surface. The invention includes a target assembly having projections projecting from the backing plate and insertable within openings within the target. The invention includes a target assembly having a plurality of coolant deflectors disposed between the target and the backing plate. A segment of each of the deflectors is nonlinear. The invention includes methods of cooling a target. Coolant deflectors are disposed within a gap between the target and a backing plate with coolant deflectors being nonlinear along at least a portion of their length.

Abstract: The invention provides a microwave source to assist in sputtering deposition. Such a microwave source comprises a microstrip antenna that is attached to an end of a dielectric layer outside a sputtering target or cathode. The microstrip antenna comprising a dielectric coated metal strip radiates microwave between the sputtering cathode and a cathode dark space that is formed near the sputtering cathode. The microwave enhances plasma density in the cathode dark space. With the assistance of the microwave source, the sputtering target is able to operate at a lower pressure, a lower voltage and may yield higher deposition rates than without the microwave source. The target may have a generally circular or rectangular cross section. The microstrip may be of a curved strip such as a ring shape or a straight strip, depending upon the shape of the sputtering target.

Abstract: According to the method, drops of an adhesive material are deposited on one of the plates, with the drops being spaced from one another. A grid having a predefined thickness lower than that of the drops is applied to the plate receiving the drops. A perpendicular and uniform pressure is applied to at least one of the plates, so that the drops (3) spread and come into contact with the opposing sides of the two plates. The spacing of the drops is defined so that after spreading under the pressure applied, air is not trapped between the drops.

Abstract: A sputtering apparatus for forming a thin film includes a pair of facing polygonal prism target holders in which a target is placed on each surface which is parallel to a rotation axis of a rotatable polygonal prism body. A magnetic pole group which includes either a plurality of magnets or a magnet and a yoke is disposed on a back surface of the target, and the magnetic pole group includes magnets or yokes of different magnetic pole directions.

Abstract: There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.

Abstract: A disclosed light-emitting-device manufacturing apparatus for manufacturing a light emitting device by forming, on an in-process substrate, an organic layer including an emitting layer includes multiple processing chambers to which the in-process substrate is sequentially transferred to be subjected to multiple substrate processing steps; and multiple substrate transfer chambers, each of which is connected to a different one of the processing chambers. A substrate holding container configured to contain the in-process substrate is sequentially connected to the substrate transfer chambers in order so that the in-process substrate is sequentially transferred to the processing chambers to be subjected to the substrate processing steps.

Abstract: Certain example embodiments relate to sputtering target backing tube that are slightly ferromagnetic, thereby providing small-scale shunting that reduces the occurrence or magnitude of short-range magnetic field deviations during magnetron sputtering with cylindrical sputtering targets. For example, backing tube allows may be carefully optimized to be somewhat ferromagnetic, thereby enhancing the uniformity of the magnetic field generated by the magnet bar. In certain example embodiments, short range magnetic field deviations may be reduced to less than about 5% from average, more preferably less than about 2% from average, and still more preferably less than about 1% from average. Such short range magnetic field deviation reducing target backing tubes may be used in along with, or in place of, shims or shunts that address long range magnetic field deviations.

Abstract: An adhesive is provided, in particular for the adhesion of conductive materials, having at least one binder component and fillers, wherein the fillers contain fibers or a fiber-powder mixture and the fibers and/or powder contain an electrically conductive material. Further, an assembly is provided made of a sputtering target material and a carrier material with an adhesive.

Abstract: A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results.

Abstract: Article are made from silicon oxide and electrically conductive doped silicon materials that are joined in a protective environment to yield a composite SiOx:Si material that exhibits the properties of SiOx and yet is electrically conductive due to the presence of the Si. Articles from such composite materials find many uses, such as for targets for DC and/or AC sputtering processes to produce silicon oxide thin films for touch-screen application, barrier thin films in LCD displays and optical thin films used in a wide variety of applications.

Abstract: An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:140 to 170:20 to 40, peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1060 to 1090 cm?1, a film density in a range of 2.6 to 2.8 g/cm3, and a distance between grains of 30 nm or shorter.

Abstract: A display device free from a deterioration in luminescence efficiency is provided. In the display device of the present invention, since an inorganic film is formed after concave parts in which luminescence portions are positioned are filled with a filling film, no crack is formed in the inorganic film. Since the inorganic film is made of a material having high gas tightness and heat conductivity (such as, diamond-like carbon or AlN), water and oxygen will hardly penetrate the luminescence portions, and heat of the luminescence portions will be conducted to the inorganic film, so that the luminescence portions do not reach high temperatures. Further, since a gap between first and second panels is filled with a resin film, the atmosphere does not enter from the outside. Because the luminescence portions are free from damage from water, oxygen and heat, the display device of the present invention has a prolonged life.

Abstract: A target assembly including a plurality of target tiles bonded to a backing plate by adhesive, for example of indium or conductive polymer, filled into recesses in the backing plate formed beneath each of the target tiles. A sole peripheral recess formed as a rectangular close band may be formed inside the tile periphery. Additional recesses may be formed inside the peripheral recess, preferably symmetrically arranged about perpendicular bisectors of rectangular tiles. The depth and width of the recesses may be varied to control the amount of stress and the stress direction.

Abstract: A magnetic recording medium having excellent fly-ability and corrosion resistance is provided in a high yield by controlling protuberant on a medium surface caused by deposition of giant silicon oxide particles, which are created during the film deposition of a granular recording layer including Si and oxygen. In one embodiment of the invention, a recording layer is deposited by a sputtering method using a target which is composed of a mixture of an alloy including at least Co and powdered crystalline SiO2.

Abstract: The present invention provides a plated article that has a thin seed layer having uniform thickness, formed by electroless plating and allowing formation of ultrafine wiring, and that avoids the complicated formation of a bilayer of a barrier layer and a catalytic metal layer prior to forming the seed layer. The present invention also provides a method for manufacturing the plated article. The plated article has an alloy thin film formed on a substrate and having a catalytically active metal (A) for electroless plating and a metal (B) capable of undergoing displacement plating with a metal ion contained in an electroless plating solution, and a metal thin film formed on the alloy thin film by electroless displacement and reduction plating. The alloy thin film of the catalytically active metal (A) and the metal (B) capable of displacement plating has a composition comprising 5 at % to 40 at % of the metal (A).

Abstract: A method of producing substrates with functional layers which have high optical properties and/or a high surface smoothness, in particular a low turbidity and significantly lower roughness, is provided. The method includes a sputtering process for coating a substrate with at least one functional layer, the sputtering process being interrupted at least once by the application of an intermediate layer with a thickness of less than 20 nm.

Abstract: A semiconductor or nonconductor vapor is generated by sputtering targets 11U, 11D in a first sputtering chamber 10, while a metal vapor is generated by sputtering targets 21U, 21D in a second sputtering chamber 20. The semiconductor or nonconductor vapor and the metal vapor are aggregated to clusters during travelling through a cluster-growing tube 32 and injected as a cluster beam to a high-vacuum deposition chamber 30, so as to deposit composite clusters on a substrate 35. The produced composite clusters are useful in various fields due to high performance, e.g. high-sensitivity sensors, high-density magnetic recording media, nano-magnetic media for transportation of medicine, catalysts, permselective membranes, optical-magnet sensors and low-loss soft magnetic materials.

Abstract: A magnetron source for producing a magnetic field near a surface of a target in a deposition system include a first magnet, a second magnet separated by a gap from the first magnet along a first direction, and a target holder configured to hold the target in the gap between the first magnet and the second magnet. The target includes a sputtering surface from which target material can be sputtered and deposited on a substrate. The target holder is so configured that the sputtering surface is substantially parallel to the first direction and the first magnet and the second magnet can produce a magnetic field near a surface of the target.

Abstract: A vacuum sputtering cathode includes a target support having a cooler. The cathode includes a support base on which a frame is disposed. The frame defines at least one cavity for the circulation of a coolant. A membrane is disposed on top of the frame and the base, frame and membrane are assembled at the periphery of the target.

Abstract: A sputtering method deposits a film on a substrate by controlling a magnetic field parallel to a surface of a target so that the magnetic field at a part of the target, other than parts of the target which are sputtered during a deposition mode in which a deposition process is performed with respect to the substrate, has an intensity lower than an arbitrary intensity at the other parts during the deposition mode and has an intensity higher than or equal to the arbitrary intensity during a standby mode in which the deposition process is not performed. A redeposited film which is deposited on the part of the target during the deposition mode is removed by performing a sputtering during the standby mode.

Abstract: A sputtering cathode assembly attachable to a cathode mounting plate for a thin-film vapor deposition chamber. The cathode assembly includes a magnet module and a cathode body generally coextensive with and sealingly housing the magnet module and defining a water channel between a top plate of the cathode body and a cooling channel plate of the magnet module. An elongated target is releasably connected atop and coextensive with the top plate and secured in place by a unique threaded fastener engagement between a target clamp and an edge portion of the cathode body whereby the target is replaceable without disassembly of the cathode body. Unique replaceable elongated fastener receiving inserts releasably secure said target against the target plate to effect target replacement without disassembly of the cathode body.

Abstract: The invention includes a target construction having a sputtering region and a flange region laterally outward relative to the sputtering region. The flange region has a front surface disposed on a front face of the construction and a back surface opposing the front surface. An o-ring groove is disposed within the flange region. The o-ring groove has a planar base surface which has a first width and has an orifice disposed along the front surface of the flange. The orifice has a second width as measured parallel relative to the base surface. The second width is greater than the first width. The flange surfaces can additionally be protected from rubbing by a layer of protective material.

Abstract: A tube target with an end block for supplying coolant to the tube target is provided. The end block comprises a rotatably mounted carrier shaft for holding and rotating the tube target; a connecting sleeve arranged in the carrier shaft; a sealing element for the tube target on its end facing the end block; a coolant inlet port in the interior of the tube target; and a coolant outlet port. The coolant outlet port is formed by at least one aperture in the sealing element. The aperture is located in the vicinity of the wall of the tube target, and eccentrically to the rotational axis of the tube target.

Abstract: A rotatable cylindrical magnetron sputtering device that includes a cathode body defining a magnet receiving chamber and a cylindrical target assembly surrounding the cathode body, wherein the cylindrical target assembly is rotatable around the cathode body. The cylindrical target assembly includes a hollow mandrel and a target portion mounted around and spaced away from the hollow mandrel portion so as to create a space gap between the hollow mandrel and the target portion, wherein the space gap may be greater than 0.002 inch and less than 0.020 inch.

Abstract: Described herein is an apparatus and a method for producing atom clusters based on a gas discharge within a hollow cathode. The hollow cathode includes one or more walls. The one or more walls define a sputtering chamber within the hollow cathode and include a material to be sputtered. A hollow anode is positioned at an end of the sputtering chamber, and atom clusters are formed when a gas discharge is generated between the hollow anode and the hollow cathode.

Abstract: Aspects comprise sputtering targets comprising a base material carrier provided with a recessed pattern, such as a looping trench, to receive a more precious material to be sputtered during deposition processes. The looping trench can have a cross-section of varying depth based on an expected variation in the magnetic field. The more precious material is provided at least in the trench, for example by hot pressing, and also can be pressed into a layer across an entirety of a surface of the carrier. During operation, the desired deposition of the precious material can occur from the trench area. Thus, a higher percentage of the precious material in the target is used, reducing inventory costs. The base material can be selected based on characteristics of the more precious material, and based on goals including reducing diffusion of base material into precious material and galvanic reactions.

Abstract: Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

Abstract: Provided is a nonmagnetic material particle dispersed ferromagnetic material sputtering target comprising a material including nonmagnetic material particles dispersed in a ferromagnetic material. The nonmagnetic material particle dispersed ferromagnetic material sputtering target is characterized in that all particles of the nonmagnetic material with a structure observed on the material in its polished face have a shape and size that are smaller than all imaginary circles having a radius of 2 ?m formed around an arbitrary point within the nonmagnetic material particles, or that have at least two contact points or intersection points between the imaginary circles and the interface of the ferromagnetic material and the nonmagnetic material.

Abstract: An embodiment of the invention provides a magnetron sputtering target structure, comprising a transmission device, at least two transmission shafts, and a plurality of magnetic bars. The transmission device winds around the transmission shafts and thus forms a transmission structure, and the magnetic bars are disposed in parallel on the transmission device.

Abstract: A deposition system includes a process chamber, a workpiece holder for holding the workpiece within the process chamber, a first target comprising a first material, a second target comprising a second material, a single magnet assembly disposed that can scan across the first target and the second target to deposit the first material and the second material on the workpiece, and a transport mechanism that can cause relative movement between the magnet assembly and the first target or the second target.

Abstract: A sputtering target assembly and method for bonding a sputtering target to a backing plate is disclosed. When insulatively bonding a sputtering target to a backing plate, it is necessary to ensure that the bonding material has good thermal conductivity so that the temperature of the target can be effectively controlled. It is also important to not have electrical conductivity through the bonding materials. In order to achieve both goals, it is beneficial to utilize an elastomer with diamond powder filler. Diamond power has very good thermal conductivity, and it also has very good dielectric strength. Diamond is a thermally effective and cost effective substitute for silver in insulative bonding.

Abstract: In one embodiment, a magnetron sputtering apparatus includes one or more magnet arrays for moving ions or charged particles on at least two plasma discharge paths on a target. Charged particles on one of the plasma discharge paths are moved in one direction, while charged particles on the other plasma discharge path are moved in the opposite direction to reduce rotational shifting of deposition flux on the patterned substrates. The plasma discharge paths may be formed by two symmetric magnet arrays or a single asymmetric magnet array rotated from behind the target.

Abstract: A method of forming a CNT containing wiring material is conducted by sputtering simultaneously CNT and a metal material on a surface of a substrate to form a CNT containing metal layer, then pattern-etching the CNT containing metal layer to form a wiring pattern. A sputtering target material having a metal material and CNT is used in the method.

Abstract: The invention relates to a method to manufacture a rotatable sputter target. The method comprises the steps of—providing a backing tube;—providing a target material on the backing tube by coiling at least one elongated member around the backing tube;—providing an outer material on top of the target material;—applying heat and/or pressure to the outer material and/or to the backing tube;—removing the outer material.

Abstract: The magnetron sputtering source comprises a target mount for mounting a target arrangement comprising a sputtering target having a sputtering surface; a primary magnet arrangement for generating close to said sputtering surface a magnetron magnetic field describing one tunnel-like closed loop having an arc-shaped cross-section; a secondary magnet arrangement for generating close to said sputtering surface an auxiliary magnetic field having a substantially arc-shaped cross-section, said auxiliary magnetic field superposing with said magnetron magnetic field and being substantially inversely polarized with respect to said magnetron magnetic field; and an adjustment unit for adjusting said auxiliary magnetic field. The vacuum treatment apparatus comprises such a magnetron sputtering source.

Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract: The invention relates to a method for operating a magnetron sputter cathode, in particular a tube cathode or several tube cathodes forming an array. In such cathodes a target passes through a magnetic field, whereby induction currents flow in the target which distort the magnetic field. This results in the nonuniform coating of a substrate. By having the relative movement between magnetic field and target alternately reverse its direction, the effect of the magnetic field distortion can be compensated. This yields greater uniformity of the coating on a substrate to be coated.

Abstract: An object of the present invention is to provide an oxygen reduction electrode having excellent oxygen reduction properties (oxygen reduction catalyst abilities). The present invention encompasses: (1) A method for manufacturing a nanostructured manganese oxide having a dendritic structure formed from an agglomeration of primary particles, wherein the method comprises the steps of: removing components from a target plate that comprises one or more kinds of manganese oxides by irradiating the target plate with laser light in an atmosphere comprising a mixed gas of inert gas and oxygen gas, the content of the oxygen gas in the mixed gas being no less than 0.05% but no more than 0.

Abstract: The invention relates to a process for manufacturing a sputter target. The process comprises the steps of—providing a target holder (12); —applying an intermediate layer (14) on said target holder; —applying a top layer (16) on top of said intermediate layer; said top layer comprising a material having a melting point which is substantially higher than the melting point of said target material; —heating the target holder coated with said intermediate layer and said top layer.

Abstract: A method for joining component bodies of material over bonding regions of large dimensions by disposing a plurality of substantially contiguous sheets of reactive composite materials between the bodies and adjacent sheets of fusible material. The contiguous sheets of the reactive composite material are operatively connected by an ignitable bridging material so that an igniting reaction in one sheet will cause an igniting reaction in the other. An application of uniform pressure and an ignition of one or more of the contiguous sheets of reactive composite material causes an exothermic thermal reaction to propagate through the bonding region, fusing any adjacent sheets of fusible material and forming a bond between the component bodies.

Abstract: A body having a junction contains a ceramics member including alumina in which an inner electrode is embedded, having a bore region extending from a surface to the inner electrode, a surface of a bottom surface of the bore region being made rough, and a terminal hole extending to the inner electrode being provided in a part of the bottom surface; a conductive terminal embedded in the terminal hole, a bottom surface is in contact with the inner electrode, and a top surface is exposed at a horizontal level of the bottom surface of the bore region; a solder junction layer contacting with the bottom surface of the bore region including the top surface; and a conductive connection member so that a lower end surface is in contact with the solder junction layer, a lower portion is inserted into the bore region.

Abstract: A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against excessive misalignment during bonding. The rectangular tiles may be arranged in staggered rows or in a herringbone or zig-zag pattern. Hexagonal and triangular tiles also provide many of the advantages of the invention.

Abstract: Embodiments of the present invention generally relate to sputtering targets used in semiconductor manufacturing. In particular, the invention relates to bonding the sputtering target to a backing plate that supports the sputtering target in a deposition chamber. In one embodiment, a method of bonding at least one sputtering target tile to a backing plate comprises providing an elastomeric adhesive layer between the at least one sputtering target tile and the backing plate, and providing at least one metal mesh within the elastomeric adhesive layer, wherein at least a portion of the at least one metal mesh contacts both the at least one sputtering target tile and the backing plate, and the at least a portion of the at least one metal mesh is made of metal wire with diameter greater than 0.5 mm.

Abstract: The invention relates to a target arrangement comprising a tubular-shaped carrier element and a hollow-cylindrical target having at least one target material, said target comprising at least one one-piece tube segment which at least partially surrounds the carrier element. Said carrier element and the tube segment are partially interconnected in a material fit by at least two plastically deformable compensating means. The invention also relates to a method for producing said type of target arrangement and a tubular segment.

Abstract: The invention relates to a rotatable sputter target and to a method to manufacture such a sputter target. The sputter target comprises a target material and a magnet array located at the interior of the target material. The magnet array defines a central zone extending along the major part of the length of the target material and defines an end zone at each end of the central zone. The target material comprises a first material and a second material. The target material comprises the first material at least on the central zone and comprises the second material at least on the end zones. The second material has a lower sputter deposition rate than the first material. The second material is preferably applied by thermal spraying. The first material comprises a first element and the second material comprises a compound of the first element of the first material.

Abstract: A sputtering target for fluorescent thin-film formation comprising a matrix material and a luminescent center material, wherein said matrix material has a chemical composition represented by the following formula (1), and simultaneously satisfies conditions represented by the following inequalities (2) to (5). MIIvAxByOzSw ??(1) 0.05?v/x?5 ??(2) 1?y/x?6 ??(3) 0.01?z/(z+w)?0.85 ??(4) 0.6?(v+x+3y/2)/(z+w)?1.5 ??(5) wherein MII represents one or more elements selected from the group consisting of Zn, Cd and Hg, A represents one or more elements selected from the group consisting of Mg, Ca, Sr, Ba and rare earth elements, B represents one or more elements selected from the group consisting of Al, Ga and In, and v, x, y, z and w each represent numerical values satisfying the conditions specified in the inequalities (2) to (5).

Abstract: Claimed is a sputtering target system comprising a plurality of backing plates to be individually cooled. Each backing plate is provided on its back side with a meandering groove that is closed off by a sealing plate. The sealing plate is welded around its circumference to the backing plate and at the same time is welded to at least one ridge located at a distance from the frame, which separates two grooved sections from one another. The sealing plate thus welded to the backing plate not only closes off the grooves to form a cooling channel, but also is used for reinforcement of the otherwise relatively flat backing plate.

Abstract: There are provided a sputtering target and a process for producing a sputtering target. The sputtering target includes a first layer located on its side to be sputter treated and a second layer located on its side not to be sputter treated. The first and second layers are bonded to each other through a bonding interface between the first layer and the second layer. The sputtering target satisfying the following requirements X and Y: requirement X: A/B?1.5 and requirement Y: A/C?1.5, wherein A represents an oxygen peak value for the bonding interface; B represents an oxygen peak value for the first layer; and C represents an oxygen peak value for the second layer. The sputtering target is advantageous in that a spent sputtering target can be recycled to utilize resources and can form a thin film while effectively preventing the occurrence of abnormal discharge and splash.