Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

Abstract: A cyanide-free electrolyte composition for the galvanic deposition of a copper layer on substrate surfaces and a method for the deposition of such layers. The electrolyte composition comprises at least copper(II) ions, a hydantoin and/or hydantoin derivative, a di- and/or tricarboxylic acid or salts thereof, and a metalate of an element of the group consisting of molybdenum, tungsten and vanadium and/or a cerium compound.

Abstract: An object of the present invention is to provide a novel method for forming an electrolytic copper plating film having excellent adhesion on the surface of a rare earth metal-based permanent magnet. The method of the present invention as a means for achieving the object is characterized in that after a magnet is immersed in a plating solution, a cathode current density of 0.05 A/dm2 to 4.0 A/dm2 for performing an electrolytic copper plating treatment is applied thereto over 10 seconds to 180 seconds to start the treatment.

Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.

Abstract: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.

Abstract: A cyanide-free electrolyte composition for the galvanic deposition of a copper layer on substrate surfaces and a method for the deposition of such layers. The electrolyte composition comprises at least copper(II) ions, a hydantoin and/or hydantoin derivative, a di- and/or tricarboxylic acid or salts thereof, and a metalate of an element of the group consisting of molybdenum, tungsten and vanadium and/or a cerium compound.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 ?m or less or 60 ?m or more. Provided are an electrolytic copper plating method and a pure copper anode for electrolytic copper plating used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath upon performing electrolytic copper plating, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.

Abstract: [Problems] To provide a method for producing a rare earth metal-based permanent magnet having on the surface thereof a copper plating film by using a novel plating solution for use in a copper electroplating treatment capable of forming a copper plating film having excellent adhesiveness on the surface of a rare earth metal-based permanent magnet. [Means for Resolution] The method for producing a rare earth metal-based permanent magnet having a copper plating film on the surface thereof according to the invention is characterized in that it comprises forming a copper plating film on the surface of a rare earth metal-based permanent magnet by means of a copper electroplating treatment by using a plating solution having its pH adjusted to a range from 9.0 to 11.5 and containing at least the following three components: (1) Cu2+ ions, (2) a chelating agent having a chelate stability constant of 10.0 or higher for Cu2+ ions, and (3) a chelating agent having a chelate stability constant of 16.

Abstract: A copper plating solution according to the present invention is characterized by that it comprising 0.03 mol/L to 0.5 mol/L of copper sulfate, 0.05 mol/L to 0.7 mol/L of ethylenediaminetetraacetic acid and 0.02 mol/L to 0.3 mol/L of sulfite, and has a pH adjusted to 5.0 to 8.5. A method for copper plating according to the present invention is characterized by that it comprises using the copper plating solution above. The copper plating solution and the method for copper plating according to the present invention stably provide a uniform copper plating film excellent in adhesion on the surface of an article to be plated, such as rare earth metal-based permanent magnet.

Abstract: An objective of the invention is to provide a method for producing a rare earth metal-based permanent magnet having on the surface thereof a copper plating film by using a novel plating solution for use in a copper electroplating treatment capable of forming a copper plating film having excellent adhesiveness on the surface of a rare earth metal-based permanent magnet. As a means for solving the problem, the method for producing a rare earth metal-based permanent magnet having a copper plating film on the surface thereof according to the invention is characterized in that the production method comprises forming a copper plating film on the surface of the rare earth metal-based permanent magnet by applying a copper electroplating treatment using a plating solution whose pH is adjusted to a range from 9.0 to 11.

Abstract: A method of electrochemical deposition (ECD) provides a barrier and a seed layer on a substrate. The surfaces of the substrate are pre-treated before a metal layer is electrochemically deposited thereon in an electrochemical plating cell with a physical or a chemical surface treatment process. The electrochemical plating cell is covered by a cap to prevent evaporation of the electrolyte solution. The electrochemical plating cell includes a substrate holder assembly with a lift seal, e.g., with a contact angle ? less than 90° between the lift seal and the substrate. The substrate holder assembly includes a substrate chuck at the rear side of the substrate.

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract: The present invention is directed to a copper bath composition and a process for the electroless and/or electrolytic plating of copper to fill vias and trenches during the manufacture of integrated circuits. Specifically, the copper bath composition comprises water, copper ions, hydroxide ions, a complexing agent to inhibit the formation of copper oxides, copper hydroxides and copper salts, a stabilizer to control the rate of electroless copper plating, a reducing agent to promote the electroless reduction of the copper ions to copper metal, and a catalyst to promote the electrolytic reduction copper ions to copper metal.

Abstract: The present invention is related to a method for the preparation of a composition for electroplating a copper-containing layer on a substrate. This method makes use of an aqueous solution that has at least: a source of copper Cu(II) ions, an additive to adjust the pH to a predetermined value, and a complexing agent for complexing Cu(II) ions. The complexing agent has the chemical formula: COOR1—COHR2R3 in which R1 is an organic group covalently bound to the carboxylate group (COO), R2 is either hydrogen or an organic group, and R3 is either hydrogen or an organic group. The solution has no reducing agent. The method involves providing electrons from a source not in direct contact with the solution, through transport means that provides the contact between said source and said solution. The present invention is also related to a process for forming a copper-containing layer on a substrate in an electroplating bath prepared according to the foregoing method.

Abstract: An R-T-B magnet (R is at least one kind of rare-earth elements including Y, and T is Fe or Fe and Co) has an electrolytic copper-plating film where the ratio [I(200)/I(111)] of the X-ray diffraction peak intensity I(200) from the (200) plane to the X-ray diffraction peak intensity I(111) from the (111) plane is 0.1-0.45 in the X-ray diffraction by CuKal rays. This electrolytic copper-plating film is formed by an electrolytic copper-plating method using an electrolytic copper-plating solution which contains 20-150 g/L of copper sulphate and 30-250 g/L of chelating agent and contains no agent for reducing copper ions and has a pH adjusted to 10.5-13.5.

Abstract: The present invention generally provides an apparatus and method for neutralizing an acid in a plating solution. The apparatus generally includes a plating cell having an anolyte compartment containing an anolyte and a catolyte compartment containing a catolyte, wherein the anolyte compartment has an anolyte inlet and an anolyte drain and the catolyte compartment has a catolyte inlet and a catolyte drain, and a cell membrane disposed in the cell between the anolyte compartment and the catolyte compartment, wherein the membrane is selective to hydrogen ions and copper ions. The apparatus further includes a catolyte storage unit in fluid communication with the catolyte inlet and an electrochemical device in fluid communication with the catolyte chamber, the electrochemical device being configured to receive a portion of aged catolyte solution and correct a catolyte concentration.

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract: In accordance with one embodiment of the invention, a process for applying a metal to a workpiece is set forth. The workpiece initially includes a seed layer deposited on at least a portion of a surface thereof that is generally unsuitable for bulk electrochemical deposition. The process starts with this workpiece and repairs the seed layer by depositing a metal using a first electrochemical deposition process to provide a repaired seed layer that is suitable for subsequent bulk electrochemical deposition. After the seed layer has been repaired, a bulk metal deposition over the repaired seed layer is executed by electrochemically depositing a bulk amount of a metal onto the repaired seed layer using a second electrochemical deposition process. The processing parameters of the second electrochemical deposition process are different from processing parameters used in the first electrochemical deposition process. A corresponding apparatus is also set forth.

Abstract: The invention consists of a method for producing an adherent copper coating on a zinc or zinc alloy article without the use of cyanide as a component of the process. The zinc or zinc alloy article is first immersed in an aqueous nickel pyrophosphate solution and is then electroplated with a copper pyrophosphate solution. The method produces an adherent copper coating on the zinc or zinc alloy, which can be deformed without any loss of the copper coating.

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer.

Abstract: Electrolytic copper plating methods are provided, wherein copper is electrolytically deposited on a substrate, and the electrolytic copper plating solution supplied to said electrolytic copper plating is subjected to dummy electrolysis using an insoluble anode. The method described above can maintain and restore the electrolytic copper plating solution so as to maintain satisfactory appearance of plated copper, fineness of deposited copper film, and via-filling.

Abstract: The present invention provides inter alia copper electroplating compositions, methods for use of the compositions and products formed by the compositions. Electroplating compositions of the invention contain an increased brightener concentration that can provide effective copper plate on difficult-to-plate aperture walls, including high aspect ratio, small diameter microvias.

Abstract: A method for plating copper conductors on an electronic substrate and devices formed are disclosed. In the method, an electroplating copper bath that is filled with an electroplating solution kept at a temperature between about 0° C. and about 18° C. is first provided. A copper layer on the electronic substrate immersed in the electroplating solution is then plated either in a single step or in a dual-step deposition process. The dual-step deposition process is more suitable for depositing copper conductors in features that have large aspect ratios, such as a via hole in a dual damascene structure having an aspect ratio of diameter/depth of more than ⅓ or as high as {fraction (1/10)}. Various electroplating parameters are utilized to provide a short resistance transient in either the single step deposition or the dual-step deposition process.

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract: This invention provides a composite foil comprising an aluminum carrier layer and an ultra-thin copper foil having a protective layer disposed between them comprising a porous copper layer and an interpenetrating zinc layer. A process for producing such composite foils comprises the steps of preparing the surface of the aluminum carrier, electrodepositing a porous copper layer on the aluminum carrier layer followed by electrodepositing a zinc layer, and then electrodepositing two layers of copper to form the ultra-thin copper foil. The composite foil provides a uniform bond strength between the aluminum carrier and the protective layer which is adequate to prevent separation of the carrier and ultra-thin copper foil during handling and lamination, but which is significantly lower than the peel strength of a copper/substrate bond, so that the carrier can easily be removed after lamination of the composite foil to an insulating substrate.

Abstract: An electrochemical autothermal reformer (EATR) provides hydrogen. The EATR includes an autothermal reformer region, a reformer anode supply region, and a composite membrane layer separating the reformer anode from the autothermal reformer region. The composite membrane layer includes a mechanically stable porous ceramic support member with a thin gas permeable ceramic substrate layer overlaying the support member. Overlaying the substrate layer is a first thin metallic catalyst layer which promotes the dissociation of H.sub.2 to 2H.sup.+ +2e.sup.31 . Overlaying the first catalyst layer is a metallic oxide layer capable of conducting 2H.sup.+ +2e.sup.- at elevated temperatures. Overlaying the metallic oxide layer is a second thin metallic catalyst layer which promotes the recombination of 2H.sup.+ +2e.sup.31 to H.sub.2.

Abstract: An anode assembly includes a perforated anode and an electrical contact assembly attached to the anode. A perforated anode holder holds the anode. The anode holder includes perforations at least in a bottom wall such that plating solution may flow through perforations in the anode holder and perforations in the anode. An anode isolator separates the anode and a cathode. The anode isolator includes at least one curvilinear surface. The contact assembly includes a closed or substantially closed cylinder member of titanium or titanium alloy, a copper lining or disk disposed within the cylinder, and a titanium or titanium alloy post fixed and in electrical engagement with the lining or disk.

Abstract: A method and electrolyte bath for depositing Cu.sup.+1 ions from the cathode diffusion layer onto a zinc substrate. Halogen ions are used as additives to organophosphonate alkaline copper electrolytes for stabilizing Cu.sup.+1 in the cathode diffusion layer.

Abstract: Ion exchange materials, as particulate and membranes, are modified by permanently attaching counter ions to a portion of the ion exchange sites. The permanent attachment of the counter ions forms semiconductor junctions which act as mini anodes, or cathodes, to significantly increase the ability to oxidize or reduce a species to be treated, or split water, in an electrolytic reactor. The non-converted transfer sites in the ion exchange material also significantly increase the mobility of the ionic species in the electrolyte. The ion exchange material may be a monobed of either modified anion exchange material or modified cation exchange material, or a suitable mixed bed of both, depending upon the application. When the anode is in direct contact with a modified cation exchange material and under the influence of direct current, free radical hydroxyl and regenerant hydrogen are formed.

Abstract: A substantially cyanide-free plating solution for depositing copper from the monovalent ionic state, which includes monovalent copper ion, a reducing agent capable of reducing divalent copper ions to monovalent copper ions, an alkali material in an amount sufficient to maintain the pH of the solution in the range of about 7 to about 10, and a complexing agent of an imide, such as succinimide, 3-methyl-3-ethyl succinimide, 3-methyl succinimide, 3-ethyl succinimide, 3,3,4,4-tetramethyl succinimide, or 3,3,4-trimethyl succinimide, or a hydantoin, such as dimethyl hydantoin. The substantially cyanide-free plating solutions may also include at least one of a conductivity salt, an additive to promote brightness, or an alloying metal. The reducing agent may be an alkali sulfite, alkali bisulfite, hydroxylamine, or hydrazine. The copper is typically provided in the form of CuCl, CuCl.sub.2, CuSO.sub.4, or Cu.sub.

Abstract: The improved aqueous, non-cyanide zinc electroplating solution prevents iron contamination during electroplating. The solution, in addition to water, has a copper salt, preferably copper sulfate, in a concentration of about 0.01-6% by weight of the solution, and the water-soluble reaction product of epichlorohydrin with Compound A, preferably in a concentration of about 16.67-26.67 gm./liter of solution. Compound A is a nitrogen-containing compound selected from aliphatic amine, unsubstituted heterocyclic nitrogen compound having at least two reactive nitrogen sites, and substituted heterocyclic nitrogen compound having at least two reactive nitrogen sites and 1-2 substitution groups selected from methyl, ethyl and amino groups. The reaction product, providing it includes the substituted or unsubstituted heterocyclic nitrogen compound, before use in the solution may be further reacted with a reagent of at least one of ammonia, aliphatic amine, polyamine or polyimine.

Abstract: A method for electrolytically plating copper onto a base metal, such as steel (18), utilizing an insoluble anode (16) includes the steps of: providing a pyrophosphate plating solution (14); adding a copper source, copper hydroxide, to the plating solution (14); and passing an electric current through the plating solution between the insoluble anode (16) and the base metal (18) to be plated. The apparatus (10) includes a plating tray (12), a pyrophosphate plating solution (14) including a soluble source of copper, an insoluble anode (16) and a power source (20). A copper plated product (P) is also disclosed and claimed.

Abstract: Copper plating cells which utilize soluble copper anodes which replenish the electrolyte with copper ions are normally used for applying copper layers to steel filaments. The amount of copper in such soluble anodes is diminished throughout the plating procedure and ultimately such soluble copper anodes need to be replaced. It has been discovered that insoluble anodes can be utilized in such plating cells.