Abstract: A method for depositing a zinc-nickel alloy on a substrate, including: (a) providing the substrate, (b) providing an aqueous zinc-nickel deposition bath as catholyte in a compartment, wherein the compartment includes an anode and anolyte, the anolyte being separated from catholyte by a membrane, and the catholyte includes nickel ions, complexing agent, zinc ions, (c) depositing zinc-nickel alloy onto the substrate, wherein after step (c) nickel ions have lower concentration than before step (c), (d) rinsing the zinc-nickel coated substrate in water, obtaining a rinsed zinc-nickel coated substrate and rinse water including a portion of the complexing agent and nickel ions, wherein (i) a portion of rinse water and/or a portion of catholyte is treated in a first treatment compartment to separate water from the complexing agent and the nickel ions, (ii) returning the separated complexing agent to the catholyte, and (iii) adding nickel ion to the catholyte.

Abstract: A copper or copper alloy electroplating bath has two or more electrolytes. The two or more electrolytes include at least one selected from nitric acid and a nitrate. The two or more electrolytes can form electrodeposits, such as a group of high-aspect bump electrodes, that have a uniform height or thickness at high speed.

Abstract: A carbon nanotube (CNT) cable includes: a pair of plated twisted wires, each wire comprising one or more sub-cores, at least one sub-core comprising CNT yarn; a dielectric surrounding the plated twisted wires; and an electrical layer surrounding the dielectric, the electrical layer configured to shield the CNT cable. A method for making a CNT cable includes: controlling a deposition rate, depositing plating so as to surround a pair of wires, each wire comprising one or more sub-cores, at least one sub-core comprising CNT yarn; twisting the plated wires together; and surrounding the plated twisted wires with an electrical layer configured to shield the plated twisted wires, thereby creating the CNT cable.

Abstract: A plating apparatus and plating methods for plating metal layers on a substrate.

Abstract: Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

Abstract: A method for making a porous metal article of manufacture is provided. The method includes subjecting a saturated aqueous electrolytic solution wherein silver or copper is a donor in a container with two electrodes, where dendrite crystals of silver or copper or silver or copper nanowires are formed and collected. The collected dendrite crystals or nanowires are pressed and sintered, thereafter cooled to room temperature at room temperature and finally pressing the cooled geometric shape to form the porous silver metal article of manufacture. The collected dendrites crystals or nanowires also can be pressed in a carbon based mold or, alternatively, a non-carbon based mold and in vacuum, sintered, cooled to room temperature.

Abstract: A nano-twinned crystal film and a method thereof are disclosed. The method of fabricating a nano-twinned crystal film includes utilizing an electrolyte solution including copper salt, acid, and a water or alcohol-soluble organic additive, and performing electrodeposition, under conditions of a current density of 20˜100 mA/cm2, a voltage of 0.2˜1.0V, and a cathode-anode distance of 10˜300 mm, to form the nano-twinned crystal film on a surface at the cathode. The nano-twinned crystal film formed by the method includes a plurality of nano-twinned copper grains and a region of random crystal phases between some of adjacent nano-twinned copper grains, wherein at least some of the nano-twinned copper grains have a pillar cap configuration with a wide top and a narrow bottom.

Abstract: A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 ?m, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.

Abstract: A door system and a method of making a door system including a metal door, a metal door frame for the metal door, and one or more door frame seals. The metal door and the metal door frame each include a steel outer surface with a first metal layer in contact with and that encapsulates or covers the steel outer surface, and a second metal layer in contact with and that encapsulates or covers the first metal layer. The first metal layer is different from the second metal layer. The first metal layer can be optional. The door frame seals are located on the metal door frame and provide conductivity between the metal door and the metal door frame. The door system preferably has an acceptable sound transmission class rating and RF shielding properties.

Abstract: A nanotwinned structure deposited on a surface of a substrate is provided. The nanotwinned structure includes at least one domain, and the domain includes a plurality of nanotwins. Each of the nanotwins possesses a faced-centered cubic (FCC) structure. The plurality of nanotwins are stacked along the [111] crystallographic axis. Less than 50% of a surface of the nanotwinned structure takes the (111) as the preferred orientation.

Abstract: The problem of high rate electrodeposition of metals such as copper during electrowinning operations or high rate charging of lithium or zinc electrodes for rechargeable battery applications while avoiding the adverse effects of dendrite formation such as causing short-circuiting and/or poor deposit morphology is solved by pulse reverse current electrodeposition or charging whereby the forward cathodic (electrodeposition or charging) pulse current is “tuned” to minimize dendrite formation for example by creating a smaller pulsating boundary layer and thereby minimizing mass transport effects leading to surface asperities and the subsequent reverse anodic (electropolishing) pulse current is “tuned” to eliminate the micro- and macro-asperities leading to dendrites.

Abstract: A plating apparatus for electroplating a wafer includes a housing defining a plating chamber for housing a plating solution. A voltage source of the apparatus has a first terminal having a first polarity and a second terminal having a second polarity different than the first polarity. The first terminal is electrically coupled to the wafer. An anode is within the plating chamber, and the second terminal is electrically coupled to the anode. A membrane support is within the plating chamber and over the anode. The membrane support defines apertures, wherein in a first zone of the membrane support a first aperture-area to surface-area ratio is a first ratio, and in a second zone of the membrane support a second aperture-area to surface-area ratio is a second ratio, different than the first ratio.

Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.

Abstract: A composition for metal plating comprising a source of metal ions and at least one leveling agent comprising at least one polyaminoamide comprising a polymer fragment of formula (I) or derivatives thereof obtainable by complete or partial protonation or N-quarternisation.

Abstract: A CO2 reduction system has a cathode in contact with a catholyte. The cathode includes a selectivity-determining layer on an electron conductor. The selectivity-determining layer includes a selectivity-determining component that includes a substituted heterocycle.

Abstract: The disclosure relates to techniques and methods for planarizing a substrate by amplifying and controlling z-height technology. Variability of z-height can be modeled or measured for each device. A counter height pattern can then be created and processed on a substrate. By using different materials with different etch rates, a planarizing pattern can be transferred to the substrate or system to create a planarized substrate surface for improved lithography. Additionally, a transition region slope can be precisely controlled using the same methods.

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.

Abstract: A cobalt contact includes a dual silicide barrier layer. The barrier layer, which may be formed in situ, includes silicides of titanium and cobalt, and provides an effective adhesion layer between the cobalt contact and a conductive device region such as the source/drain junction of a semiconductor device, eliminating void formation during a metal anneal.

Abstract: Apparatus and methods for electroplating metal onto substrates are disclosed. The electroplating apparatus comprise an electroplating cell and at least one oxidization device. The electroplating cell comprises a cathode chamber and an anode chamber separated by a porous barrier that allows metal cations to pass through but prevents organic particles from crossing. The oxidation device (ODD) is configured to oxidize cations of the metal to be electroplated onto the substrate, which cations are present in the anolyte during electroplating. In some embodiments, the ODD is implemented as a carbon anode that removes Cu(I) from the anolyte electrochemically. In other embodiments, the ODD is implemented as an oxygenation device (OGD) or an impressed current cathodic protection anode (ICCP anode), both of which increase oxygen concentration in anolyte solutions. Methods for efficient electroplating are also disclosed.

Abstract: An electroplating processor includes a thin lower membrane support for supporting a membrane. The lower membrane support may be provided as a flexible plastic sheet having a pattern of through-openings. The through-openings may be aligned with openings in a rigid upper membrane support. The perimeter of the lower membrane may be clamped in the same perimeter seal as used to clamp and seal the perimeter of the membrane. The lower membrane support supports the membrane without adding significantly to the overall height of the processor. The processor can be stacked in a two level processing system without requiring additional clean room space.

Abstract: A composition comprising a source of metal ions and at least one leveling agent obtainable by condensing at least one trialkanolamine of the general formula N(R1—OH)3 (Ia) and/or at least one dialkanolamine of the general formula R2—N(R1—OH)2 (Ib) to give a polyalkanolamine(II), wherein the R1 radicals are each independently selected from a divalent, linear or branched aliphatic hydrocarbon radical having from 2 to 6 carbon atoms, and the R2 radicals are each selected from hydrogen and linear or branched aliphatic, cycloaliphatic and aromatic hydrocarbon radicals having from 1 to 30 carbon atoms, or derivatives obtainable by alkoxylation, substitution or alkoxylation and substitution of said polyalkanolamine(II).

Abstract: For improving the current transfer during the electrolytic metallization of workpieces, a method is proposed: (a) providing a metal depositing apparatus 17, in which the workpiece, at least one anode 40, 41 and a metal deposition electrolyte AE are arranged and which has a device for electric current generation 60 and at least one current feeding device 31 with in each case at least one electrical contact element 34, 35 for making electrical contact with the workpiece; (b) bringing the at least one electrical contact element 34, 35 into contact with the workpiece; and (c) feeding electric current to the workpiece via the at least one electrical contact element 34, 35 in order that the deposition metal deposits on the workpiece. Before method step (b), in a further method step (d), deposition metal is deposited on the at least one electrical contact element 34, 35.

Abstract: Embodiments of the invention are directed to methods of electroplating copper onto at least one surface of a substrate in which more uniform electrical double layers are formed adjacent to the at least one surface being electroplated (i.e., the cathode) and an anode of an electrochemical cell, respectively. In one embodiment, the electroplated copper may be substantially-free of dendrites, exhibit a high-degree of (111) crystallographic texture, and/or be electroplated at a high-deposition rate (e.g., about 6 ?m per minute or more) by electroplating the copper under conditions in which a ratio of a cathode current density at the at least one surface to an anode current density at an anode is at least about 20. In another embodiment, a porous anodic film may be formed on a consumable copper anode using a long conditioning process that promotes forming a more uniform electrical double layer adjacent to the anode.

Abstract: The invention provides a method for producing a modified surface (5) comprising: patterning a surface (7) by forming thereon a porous molecular network (9) defined by non-covalent interactions between constituent molecules; and depositing in said porous network (9) and on said patterned surface (11) molecules (13) so as to form a self-assembled monolayer (15), wherein both said patterning and said depositing are effected by contact with liquids.

Abstract: The present technology generally relates to copper plating solutions. Specifically, the present technology includes a copper plating solution comprising a source of copper ions and a conductivity salt wherein the copper plating solution has a pH between 1.7 and 3.5 as is essentially free of chloride ions. The present technology also relates to a method of using such copper plating solutions.

Abstract: This invention relates to a method of forming a copper film on a Mo/SUS flexible substrate, which enables the copper film to be uniformly formed on the Mo/SUS flexible substrate in a short period of time by applying current and in which the copper film becomes thicker in proportion to an increase in a concentration of a copper precursor aqueous solution or in a current density.

Abstract: A process of fabricating a heat dissipation substrate is provided. A metal substrate having an upper surface, a lower surface, first recesses located on the upper surface and second recesses located on the lower surface is provided. The metal substrate is divided into carrier units and connecting units connecting the carrier units. A first and a second insulating materials are respectively filled into the first and the recesses. A first conductive layer is formed on the upper surface and the first insulating material. A second conductive layer is formed on the lower surface and the second insulating material. The first and the second conductive layers are patterned to form a first and a second patterned conductive layers. The first and the second insulating materials are taken as an etching mask to etch the connecting units of the metal substrate so as to form a plurality of individual heat dissipation substrates.

Abstract: The subject of the present invention is a method of the electrolytic isolation of arsenic from industrial electrolytes including waste electrolytes used in the electrorafination of copper after its prior decopperisation.

Abstract: A copper mold or copper mold plate and also a process for reconditioning such worn molds or mold plates, which are used for the continuous casting of metals or metal alloys is provided. An electrolytically applied copper coating is provided on the inner wall of the mold or on that side of the mold plate which faces toward the casting strand.

Abstract: A cyanide-free electrolyte composition for the galvanic deposition of a copper layer on substrate surfaces and a method for the deposition of such layers. The electrolyte composition comprises at least copper(II) ions, a hydantoin and/or hydantoin derivative, a di- and/or tricarboxylic acid or salts thereof, and a metalate of an element of the group consisting of molybdenum, tungsten and vanadium and/or a cerium compound.

Abstract: A copper electroplating method including dipping a substrate in a copper electroplating solution, the substrate including a seed layer; and forming a copper electroplating layer on the seed layer, wherein the copper electroplating solution includes water, a copper supply source, an electrolytic material, and a first additive, the first additive includes a compound represented by Formula 1, below:

Abstract: Disclosed is an electroplating method for filling cavities, through holes, blind holes, or micro blind holes of a work piece with metals. According to said method, the work piece containing cavities, through holes, blind holes, or micro blind holes is brought in contact with a metal deposition electrolyte, and a voltage is applied between the work piece and at least one anode such that a current flow is fed to the work piece. The invention method is characterized in that the electrolyte encompasses a redox system.

Abstract: A method and composition for metallizing a via feature in a semiconductor integrated circuit device substrate, using a leveler compound which is a dipyridyl compound.

Abstract: A copper electroplating solution which contains compounds with the structure —X—S—Y— wherein X and Y are, independently atoms selected from a group consisting of hydrogen, carbon, sulfur, nitrogen, and oxygen, and X and Y can be the same only if they are carbon atoms and ninhydrin. By using this copper electroplating solution, it is possible to form good filled vias without worsening the appearance of the plating.

Abstract: The present invention relates to a copper plating solution for relieving the deposit stress of an electroplated copper film. In the copper electroplating solution of the present invention, glycerin propoxylate ethoxylate is used as a carrier for relieving the deposit stress, and phenylurea is added as a deposit stress relieving additive. The copper electroplating solution of the present invention includes the phenylurea by from about 0.02 to about 0.08 g/l.

Abstract: The invention relates to an aqueous acidic bath for electrolytic deposition of copper, comprising, at least one source of copper ions, at least one acid, at least one brightener compound, and at least one leveler for copper-deposition, wherein at least one leveler is a ruthenium compound, and to a process for the electrolytic deposition of copper, in particular for filling a blind micro Vertical Interconnect Access (VIA), through hole VIA, trench and similar structures on printed circuit boards, chip carriers and semiconductor wafers.

Abstract: It is an object of the present invention to provide an electrodeposited copper foil which has a lower profile and a higher gloss than low-profile electrodeposited copper foil conventionally supplied in markets. For achieving this object, the present invention employs an electrodeposited copper foil which has a super low profile, the surface roughness (Rzjis) of the deposit side of lower than 1.0-micron meter, and the gloss [Gs(60-deg.)] thereof of not lower than 400 irrespective to its thickness. The present invention also provides a manufacturing method of an electrodeposited copper foil obtained by electrodeposition using a sulfuric acid base copper electrolytic solution obtained by adding 3-mercapto-1-propanesulfonic acid and/or bis(3-sulfopropyl)disulfide, a quaternary ammonium salt polymer having a cyclic structure, and chlorine.

Abstract: It is an object to provide a surface-treated electro-deposited copper foil which has a low profile at a level equal to or excellent than that of low-profile surface-treated electro-deposited copper foils that have conventionally been supplied to the market and in which waviness affecting the straight line performance of wiring is small, and a method for manufacturing the same. In order to achieve this object, in the surface-treated electro-deposited copper foil, the maximum waviness height (Wmax) of the bonding surface to be bonded with an insulation layer-constituting material to be 0.05 ?m to 0.7 ?m, the maximum peak to valley height (PV) to be 0.05 to 1.5 ?m, and the surface roughness (Rzjis) to be 0.1 ?m to 1.0 ?m.

Abstract: A process for treatment of shaped bodies comprising copper, wherein an aqueous mixture (M) comprising (a.) chlorine-free acids without carboxyl groups, (b.) oxidizing agents, (c.) aqueous solvent and optionally additional additives is contacted with the shaped body. Another characteristic feature of the process is that the aqueous mixture (M) after the etching or pickling additionally comprises (e.) dissolved copper and is separated from the solid. Also encompassed is a process for workup of the aqueous mixture (M) which has been separated and additionally comprises dissolved copper by electrolysis. Further provided are mixtures (MI) comprising (a.) from 10 to 40% by weight of methanesulfonic acid, (b.) from 10 to 20% by weight of hydrogen peroxide and (c.) from 40 to 80% by weight of water, and the use thereof for etching or pickling of shaped bodies comprising copper.

Abstract: Copper electroplating liquid which does not use formaldehyde, which is harmful to the environment, and which exhibits excellent via filling ability is offered. The copper electroplating liquid of this invention includes the compound that has the structure of —X—S—Y— where X and Y are each an atom selected from the group of hydrogen atoms, carbon atoms, sulfur atoms, nitrogen atoms and oxygen atoms, and X and Y can be the same only when they are carbon atoms, and a specific urea derivative. When the said copper electroplating liquid is used, deterioration of the appearance will not occur and a good filled via can be formed.

Abstract: An automatic analyzer detects voltage applied across electrodes, and judges whether voltage value falls within set voltage range. When the detected voltage value is lower than minimum value of set voltage range, the analyzer calculates the deficient amount of base solution based on the detected voltage value, controls a valve to supply the deficient amount of base solution, then, performs operation control of the valve so as to keep the prescribed amount of plating solution in plating solution tank, and discharges plating solution. When the detected voltage value is higher than maximum value of set voltage range, the analyzer calculates the excess amount of base solution based on the detected voltage value, controls a valve, and supplies pure water into the tank so that the base solution concentration falls within prescribed range to dilute plating solution, then controls a valve, and discharges plating solution so as to keep prescribed amount.

Abstract: A copper electroplating bath useful in filling non-through holes formed on a substrate which contains a water-soluble copper salt, sulfuric acid, and chloride ions and further contains a brightener, a carrier, and a leveler as additives, wherein the leveler contains at least one water-soluble polymer containing quaternary nitrogen, tertiary nitrogen, or both which are cationizable in a solution. In the copper electroplating bath, the filling power for non-through holes formed on a substrate can be easily controlled so as to fit to the size of the holes only by changing the quaternary nitrogen to tertiary nitrogen ratio of the water-soluble polymer to be used as the leveler, which enables copper electroplating of non-through holes of various sizes with a good fit to the sizes.

Abstract: In a through hole closing process, a metal plate is attached to one surface of a conductive base member having a plurality of through holes by the use of a magnet, in a copper plating process, a copper plating layer is formed on the conductive base member and the metal plate exposed within the through holes, from the side of the conductive base member where the metal plate is not attached, thereby to fill up the through holes, in a film forming process, a Pd alloy film is formed by plating on the surface of the conductive base member after removal of the metal plate, and in a removal process, the copper plating layer is removed by selective etching, thereby to produce a hydrogen production filter that is used in a reformer a fuel cell so as to be capable of stably producing high purity hydrogen gas.

Abstract: Metal electroplating processes are used in pH sensitive applications to plate metal layers on semiconductors. The semiconductors may be used in the manufacture of photovoltaic devices and solar cells.

Abstract: Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Abstract: Electrodeposition involving an electrolyte having a surface-smoothing additive can result in self-healing, instead of self-amplification, of initial protuberant tips that give rise to roughness and/or dendrite formation on the substrate and/or film surface. For electrodeposition of a first conductive material (C1) on a substrate from one or more reactants in an electrolyte solution, the electrolyte solution is characterized by a surface-smoothing additive containing cations of a second conductive material (C2), wherein cations of C2 have an effective electrochemical reduction potential in the solution lower than that of the reactants.

Abstract: Methods of forming embedded, multilayer capacitors in printed circuit boards wherein copper or other electrically conductive channels are formed on a dielectric substrate. The channels may be preformed using etching or deposition techniques. A photoimageable dielectric is an upper surface of the laminate. Exposing and etching the photoimageable dielectric exposes the space between the copper traces. These spaces are then filled with a capacitor material. Finally, copper is either laminated or deposited atop the structure. This upper copper layer is then etched to provide electrical interconnections to the capacitor elements. Traces may be formed to a height to meet a plane defining the upper surface of the dielectric substrate or thin traces may be formed on the remaining dielectric surface and a secondary copper plating process is utilized to raise the height of the traces.

Abstract: A tape film package is provided including an insulating pattern; a via contact in a via hole in the insulating pattern; first interconnection patterns extending from the via contact to a cutting surface of the insulating pattern; and second interconnection patterns connected to the via contact below the insulating pattern. The second interconnection patterns are parallel to the first interconnection patterns and spaced apart from the cutting surface of the insulating pattern.

Abstract: An object of the present invention is to provide a novel method for forming an electrolytic copper plating film having excellent adhesion on the surface of a rare earth metal-based permanent magnet. The method of the present invention as a means for achieving the object is characterized in that after a magnet is immersed in a plating solution, a cathode current density of 0.05 A/dm2 to 4.0 A/dm2 for performing an electrolytic copper plating treatment is applied thereto over 10 seconds to 180 seconds to start the treatment.