Abstract: A semiconductor crystal wafer is fixed between two electrolyte-filled cells so that the front surface and rear surface thereof are respectively in contact with an electrolyte. A respective electrode is located in the electrolyte, a DC voltage being applied between these electrodes so that the semiconductor-to-electrolyte contact of the one cell is polarized in the conducting direction and the other is polarized in the non-conducting direction. A current flow through the semiconductor crystal body is enabled in that the inhibiting surface of the semiconductor crystal is illuminated and charge carriers are generated as a result thereof. On the basis of the selection of suitable electrolytes and the intensity of illumination, high current density is possible even given high-impedance semiconductor crystal wafers as well as semiconductor crystal bodies having doping steps or pn junctions. The method is particularly simple in many semiconductor processing and analyses methods.

Abstract: The present invention relates to a method of electroplating in which the electroplating bath is treated by the direct injection of electromagnetic radiation. Most preferably, the electromagnetic radiation is within the radio frequency range and is injected through a metal conductor directly in contact with the bath. Such treatment increases the speed of electroplating as well as the quality of the plated product. The invention is applicable to the plating of zinc, chrome, nickel, precious metals and the like.

Abstract: The invention provides a method for forming deposits of superconducting ceramics by sequentially electrodepositing layers of metals, of a type and in proportion suitable for forming a superconducting ceramic, to form a precursor metal deposit, followed by oxidizing the precursor deposit to form a superconducting ceramic deposit. Optionally, the electroplating steps are conducted in such a manner that a patterned precursor deposit results, to obtain a patterned superconducting deposit after oxidation.