Abstract: The invention is a technique for strongly integrating a galvanized steel sheet and a resin molded article. A hot-dip galvanized steel sheet “Z18” is immersed in an aqueous solution for aluminum degreasing at 75° C. for 7 minutes, to form roughness having an RSm of 0.8 to 2.3 ?m and an Rz of 0.3 to 1.0 ?m on the surface. The surface is covered with convex protrusions having a diameter of about 100 nm, and a chromate treatment layer appears in the surface. In other words, three conditions suitable for bonding are satisfied thereby. A resin composition comprising 70 to 97 wt % of polyphenylene sulfide and 3 to 30 wt % of a polyolefin resin is injected onto the surface. The resin composition penetrates into ultra-fine irregularities and is cured in that state, whereby a composite in which the galvanized steel sheet and the resin molded article are strongly integrated is obtained. The shear rupture strength of the composite is extremely high, in excess of 20 MPa.

Abstract: A solid oxide fuel cell comprising a metal frame, a porous metal substrate, a first anode isolation layer, an anode interlayer, a second anode isolation layer, an electrolyte layer, a cathode isolation layer, a cathode interlayer and a cathode current collecting layer. The first anode isolation layer, the anode interlayer, the second anode isolation layer, the electrolyte layer, the cathode isolation layer, the cathode interlayer and the cathode current collecting layer are sequentially disposed on the porous metal substrate. The first anode isolation layer is porous sub-micron structured or porous micron structured; the anode interlayer is porous nano structured; the second anode isolation layer is dense structured or porous nano structured; the electrolyte is dense and gas-tight; the cathode isolation layer is dense structured or porous nano structured; the cathode interlayer is porous nano structured or porous sub-micron structured; and the cathode current collecting layer is porous micron structured.

Abstract: A substrate for mass spectrometry for effectively performing ionization has been demanded. The substrate for mass spectrometry includes a base, a porous film formed on the base, and an inorganic material film formed on the porous film. The inorganic material film has a plurality of concaves formed vertically to the base, and the diameter of the concaves is not less than 1 nm and less than 1 ?m.

Abstract: A metal-resin composite comprises a metal substrate with concavities in the surface, a first coating layer on the surface of the metal substrate, a second coating layer on the first coating layer, and a third coating layer on the second coating layer. The first coating layer fills the concavities and covers the surface of the substrate.

Abstract: A method and a plasma system are provided for anisotropically etching structures into a substrate positioned in an etching chamber, e.g., structures defined using an etching mask in a silicon substrate, using a plasma. For this purpose, the etching chamber is supplied at least intermittently with an etching gas and at least intermittently with a passivation gas, the passivation gas being supplied to the etching chamber in cycles having a time period between 0.05 second and 1 second. In the plasma system, in addition to a plasma source, via which the plasma acting on the substrate may be produced, an arrangement is provided for at least temporary supply of the etching gas and at least temporary supply of the passivation gas to the etching chamber, which arrangement is designed in such a way that the passivation gas may be supplied to the etching chamber in cycles having a time period between 0.05 second and 1 second.

Abstract: Methods and apparatus may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract: In one preferred aspects, methods are provided to produce a three-dimensional feature, comprising: (a) providing a nano-manipulator device; (b) positioning an article with the nano-manipulator device; and (c) manipulating the article to produce the three-dimensional feature. The invention relates to production of nanoscale systems that can be tailored with specific physical and/or electrical characteristics or need to have these characteristics modified. Methods and apparatus are presented that can construct three-dimensional nanostructures and can also modify existing nanostructures in three dimensions.

Abstract: A method of making a microfluidic device is provided. The method features patterning a permeable wall on a substrate, and surrounding the permeable wall with a solid, non-permeable boundary structure to establish a microfluidic channel having a cross-sectional dimension less than 5,000 microns and a cross-sectional area at least partially filled with the permeable wall so that fluid flowing through the microfluidic channel at least partially passes through the permeable wall.

Abstract: There is provided a method for forming a superfine pattern, which can simply produce a superfine pattern with high mass productivity. The method comprises the steps of forming a first convex pattern, on a film to be treated, forming a spacer formed of a silazane-containing resin composition on the side wall of the convexes constituting the first convex pattern, and forming a superfine pattern using as a mask the spacer or a resin layer disposed around the spacer. The spacer is formed by curing an evenly coated resin composition only in its part around the first convex pattern. According to this method for pattern formation, unlike the conventional method, a superfine pattern can be formed.

Abstract: Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that includes a) depositing a polymer on a substrate in an etch reactor, b) etching the substrate using a gas mixture including a fluorine-containing gas and oxygen in the etch reactor, c) etching a silicon-containing layer the substrate using a fluorine-containing gas without mixing oxygen in the etch reactor, and d) repeating a), b) and c) until an endpoint of a feature etched into the silicon-containing layer is reached.

Abstract: Embodiments of the disclosure generally provide a method and apparatus for processing a substrate in a vacuum process chamber. In one embodiment a vacuum process chamber is provided that includes a chamber body and lid disposed on the chamber body. A blocker plate is coupled to the lid and bounds a staging plenum therewith. A gas distribution plate is coupled to the lid. The gas distribution plate separates a main plenum defined between the gas distribution plate and the blocker plate from a process volume defined within the chamber body. The gas distribution plate and the blocker plate define a spacing gradient therebetween which influences mixing of gases within the main plenum.

Abstract: The invention relates to a method for connecting a precious metal surface to a polymer, wherein a layer made of 20% to 40% gold and 80% to 60% silver is deposited on a substrate and the silver is subsequently selectively removed in order to produce a nanoporous gold layer. A fluid polymer is applied to the gold layer and cured.

Abstract: Light in the visible spectrum is modulated using an array of modulation elements, and control circuitry connected to the array for controlling each of the modulation elements independently, each of the modulation elements having a surface which is caused to exhibit a predetermined impedance characteristic to particular frequencies of light. The amplitude of light delivered by each of the modulation elements is controlled independently by pulse code modulation. Each modulation element has a deformable portion held under tensile stress, and the control circuitry controls the deformation of the deformable portion. Each deformable element has a deformation mechanism and an optical portion, the deformation mechanism and the optical portion independently imparting to the element respectively a controlled deformation characteristic and a controlled modulation characteristic. The deformable modulation element may be a non-metal.

Abstract: The present invention relates to a method for forming electrode patterns of a ceramic substrate including the steps of: forming a plurality of conductive adhesion patterns on the ceramic substrate to be separated apart from one another; forming a plating seed layer, covering the conductive adhesion patterns, on the ceramic substrate; forming photoresist patterns, exposing parts corresponding to the conductive adhesion patterns, on the plating seed layer; forming a plating layer on the plating seed layer exposed by the photoresist patterns; removing the photoresist patterns; and etching parts of the plating seed layer exposed by removal of the photoresist patterns.

Abstract: Methods to etch an opening in a substrate layer with reduced critical dimensions are described. A multi-layered mask including a lithographically patterned photoresist and an unpatterned organic antireflective coating (BARC) is formed over a substrate layer to be etched. The BARC layer is etched with a significant negative etch bias to reduce the critical dimension of the opening in the multi-layer mask below the lithographically define dimension in the photoresist. The significant negative etch bias of the BARC etch is then utilized to etch an opening having a reduced critical dimension into the substrate layer. To plasma etch an opening in the BARC with a significant negative etch bias, a polymerizing chemistry, such as CHF3 is employed. In a further embodiment, the polymerizing chemistry provide at low pressure is energized at a relatively low power with a high frequency capacitively coupled source.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a first block on a nanodot material, forming a first spacer on the first block, removing the first block to form a free standing spacer, removing exposed portions of the nanodot material and then the free standing spacer to form nanowires, forming a second block at an angle to a length of the nanowires, forming a second spacer on the second block, forming a second free standing spacer on the nanowires by removing the second block, and removing exposed portions of the nanowires and then the second free standing spacer to form an ordered array of nanodots.

Abstract: An organic rankine cycle system for recovering and utilizing waste heat from a waste heat source by using a closed circuit of a working fluid is provided. The organic rankine cycle system includes at least one evaporator. The evaporator further includes a surface-treated substrate for promoting nucleate boiling of the working fluid thereby limiting the temperature of the working fluid below a predetermined temperature. The evaporator is further configured to vaporize the working fluid by utilizing the waste heat from the waste heat source.

Abstract: Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the substrate, forming a top surface with detachment characteristics. A flexible film is formed on the top surface with detachment characteristics. The flexible film within the top surface with detachment characteristics is cut and isolated.

Abstract: A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

Abstract: A method and system of etching a metal nitride, such as titanium nitride, is described. The etching process comprises introducing a process composition having a halogen containing gas, such as Cl2, HBr, or BCl3, and a fluorocarbon gas having the chemical formula CxHyFz, where x and z are equal to unity or greater and y is equal to 0 or greater.

Abstract: The invention relates to a nanofiber fabrication method comprising nanofiber growth from a catalyst zone, furthermore comprising the following steps: producing at least one micropattern (11) on the surface of a substrate (1); producing a catalyst zone (50) on the surface of said micropattern; nanofiber growth from the catalyst zone, characterized in that the micropattern (11) comprises a base, at least partially convergent side walls and an upper face, said base being covered with a so-called “poison” layer (4) where no nanofiber growth catalysis effect can take place, the so-called “poison” layer not being present on said upper face; the base being covered with a catalyst layer (5) on the surface of the so-called “poison” layer; the thickness of the “poison” layer and the thickness of the catalyst layer being such that the nanofibers cannot grow either on the side walls or on the base of the micropatterns constructed beforehand.

Abstract: In a method of forming an ACL, a substrate is provided in a deposition chamber. A plasma deposition process is performed by providing a deposition gas into the deposition chamber to form the ACL on the substrate. The deposition gas includes a deposition source gas, a carrier gas and a control gas. The deposition source gas includes a hydrocarbon, and the control gas includes at least one of oxygen and oxycarbon.

Abstract: A production process for a structure comprising: preparing a substrate on which a first layer and a second layer are provided in this order; forming a second mold which is a part of a mold member serving as a mold for forming the structure from the second layer; etching the first layer using the second mold as a mask and thereby forming a first mold which is another part of the mold member from the first layer; providing a coating layer which serves as the structure to cover the first mold and the second mold; and removing the first mold and the second mold and thereby forming the structure.

Abstract: A method of replacing a top oxide around a storage element of a memory device is provided. The method can involve removing a core first poly and core first top oxide in a core region while not removing a periphery first poly in a periphery region on a semiconductor substrate; forming a second top oxide around a storage element in the core region and on the periphery first poly in the periphery region; forming a second poly over the semiconductor substrate in both the core and periphery regions; removing the second poly and second top oxide in the periphery region; and forming a third poly on the semiconductor substrate in both the core and periphery regions.

Abstract: In one embodiment of the present invention, a halogen-free plasma etch processes is used to define a feature in a multi-layered masking stack including an amorphous carbon layer. In a particular embodiment, oxygen (O2), nitrogen (N2), and carbon monoxide (CO) are utilized to etch the amorphous carbon layer to form a mask capable of producing sub-100 nm features in a substrate film having a reduced line edge roughness value. In another embodiment, the present invention employs an O2 plasma pretreatment preceding the halogen-free amorphous carbon etch to first form an oxidized silicon region in a patterned photoresist layer to increase the selectivity of the amorphous carbon etch relative to a patterned photoresist layer containing unoxidized silicon.

Abstract: A lyophobic treatment method of imparting lyophobic properties to a surface of a base material having hole sections, includes: an organic film formation step of forming an organic film on the surface of the base material and inner wall faces of the hole sections of the base material; a protective member formation step of forming a protective member on the organic film on the surface of the base material; an organic film removal step of removing the organic film on the inner wall faces of the hole sections of the base material; a protective member removal step of removing the protective member on the organic film on the surface of the base material; and a fluorination step of carrying out fluorination processing of the organic film on the surface of the base material.

Abstract: A device comprising at least one cantilever comprising at least two tips is described, where the tips have substantially the same tip heights. Methods for making and using such a device are also provided. The height of one tip off of the surface can be more easily determined when the two tips have equal height.

Abstract: A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an O2 gas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.

Abstract: A formation method for forming a water repellent layer on a surface of a metal substrate forms asperities on a surface of a metal basis material of the metal substrate by irradiating the metal basis material with plasma ions. The formation method forms an alloy from atoms of a metal of the metal basis material and the plasma ions. The formation method forms the asperities with portions of the metal basis material, which are not etched due to the alloy, and portions of the metal basis material, which are not alloyed but are etched. The formation method forms the water repellent layer by forming the asperities.

Abstract: A film forming apparatus 100 is provided with a processing chamber 2 for accommodating a wafer W; a gas supply section 10 for supplying inside the processing chamber 2 with a gas containing a Cu material gas and an Mn material gas; a shower head 4 for introducing the gas fed from the gas supply section 10 into the processing chamber 2; and a vacuum pump 8 for exhausting inside the processing chamber 2. The gas supply section 10 is provided with a Cu material storing section 21; an Mn material storing section 22; a manifold 40 to which the Cu material and the Mn material are introduced to be mixed; one vaporizer 42 for vaporizing the mixture formed at the manifold 40; and material gas supply piping 54 for introducing into the shower head 4 the material gas formed by vaporization.

Abstract: Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by a procedure in which a silicon wafer on a susceptor in the epitaxy reactor, is pretreated in a first step with a hydrogen flow rate of 1-100 slm and in a second step with hydrogen and an etching medium at a hydrogen flow rate of 1-100 slm, and an etching medium flow rate of 0.5-1.5 slm, at an average temperature of 950-1050° C., and is subsequently coated epitaxially, wherein, during the second pretreatment step, the power of heating elements is regulated such that there is a temperature difference of 5-30° C. between a radially symmetrical central region of the silicon wafer and an outer region of the silicon outside the central region.

Abstract: The invention relates to a method for precision processing of substrates in which a liquid jet which is directed towards a substrate surface and contains a processing reagent is guided over the regions of the substrate to be processed, a laser beam being coupled into the liquid jet. Likewise, a device which is suitable for implementation of the method is described. The method is used for different process steps in the production of solar cells.

Abstract: A method of creating a patterned coated layer on a substrate comprises the steps of applying a pattern on the substrate by an additive process using a first material, depositing a second material by vapour deposition over the whole substrate area and removing the first material by treatment with a solvent.

Abstract: By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.

Abstract: Methods of controlling the step coverage and pattern loading of a layer on a substrate are provided. The dielectric layer may be a silicon nitride, silicon oxide, or silicon oxynitride layer. The method comprises depositing a dielectric layer on a substrate having at least one formed feature across a surface of the substrate and etching the dielectric layer with a plasma from oxygen or a halogen-containing gas to provide a desired profile of the dielectric layer on the at least one formed feature. The deposition of the dielectric layer and the etching of the dielectric layer may be repeated for multiple cycles to provide the desired profile of the dielectric layer.

Abstract: Surface texturing process, i.e. one for the formation of at least one array of features with a characteristic dimension on at least one surface portion of a substrate having a glass function, characterized in that a solution containing at least one precursor of a material to be deposited is dissociated, at atmospheric pressure, within a flame, said flame being directed toward said surface portion so as to deposit, in the form of a plurality of nodules based on said material, a mask, said mask of said material being subjected to an etching step.

Abstract: Calibration wafers and methods for calibrating a plasma process performed in a plasma processing apparatus, such as an ionized physical vapor deposition apparatus. The calibration wafer includes one or more selective-redeposition structures for calibrating a plasma process. The selective-redeposition structures receive a controllable and/or measurable amount of redeposited material during the plasma process.

Abstract: A medical device such as a wire guide has a lubricious and/or therapeutic coating adhered to an etched, carbonaceous polymeric surface, for example a sodium-etched polymer surface. A method for preparing a lubricious and/or therapeutic coating on a medical device includes etching a polymeric portion of the device to create a carbonaceous surface and applying a lubricious and/or therapeutic coating on the etched surface.

Abstract: The invention relates to a vacuum pump in which the gas bearing is coated with a hard layer, and to a process for preparing such gas bearing of a vacuum pump.

Abstract: An edge-sealed, encapsulated environmentally sensitive device. The device includes an environmentally sensitive device, and at least one edge-sealed barrier stack. The edge-sealed barrier stack includes a decoupling layer and at least two barrier layers. The environmentally sensitive device is sealed between an edge-sealed barrier stack and either a substrate or another edge-sealed barrier stack. A method of making the edge-sealed, encapsulated environmentally sensitive device is also disclosed.

Abstract: A security device for the identification or authentication of valuable goods is described, including a thin material layer (22, 26) presenting a stochastic pattern including micro/submicrostructures, where the latter are arranged in blobs (2) each of which presents a complexity factor Cx = L 2 4 ? ? · A , where L is the perimeter of the blob and A its area, and wherein blobs having a Cx value greater than or equal to 2 cover at least 5%, preferably at least 15%, of the device surface. According to a preferred embodiment, the material layer may include a film including at least a first and a second polymers arranged respectively within a first and a second phases defining the micro/submicrostructures. Preferred processes of fabrication are also disclosed, as well as a method for securing a valuable good based on such a security device.

Abstract: A method of manufacturing a mould part (8) for forming an article. The method comprises: providing a master (1) of an aluminium alloy or a zinc alloy with a surface (7) corresponding to the surface of the article to be formed by the mould part. A copper layer (3) is deposited on top of the master surface (7). Then a mould part layer (4) of nickel, a nickel alloy, cobalt or a cobalt alloy is plated on top of the copper layer. The master (1) is dissolved in a solution. The copper layer (3) is selectively etched from the mould part layer (4) in an alkaline etchant comprising free Cu(II) ions, a first complexing agent forming strong complexes with Cu(I) ions but not Ni ions or Co ions, a second complexing agent forming strong complexes with Cu(II) ions but not Ni ions or Co ions. Oxygen is supplied to the etchant for oxidizing Cu(I) ions to Cu (II) ions.

Abstract: An implantable endoluminal device that is fabricated from materials that present a blood or body fluid and tissue contact surface that has controlled heterogeneities in material constitution. An endoluminal stent-graft and web-stent that is made of an monolithic material deposited into a monolayer and etched into regions of structural members and web regions subtending interstitial regions between the structural members. An endoluminal graft is also provided which is made of a biocompatible metal or metal-like material. The endoluminal stent-graft is characterized by having controlled heterogeneities in the stent material along the blood flow surface of the stent and the method of fabricating the stent using vacuum deposition methods.

Abstract: Methods for fabricating templates for nanoelement assembly and methods for fluid-guided assembly of nanoelements are provided. Templates are fabricated by plasma modification of surface hydrophilicity and production of a network of hydrophobic trenches having a hydrophilic bottom surface. Single-walled carbon nanotubes (SWNT) can be assembled into stable films, ribbons, and wires of nanoscale thickness and nanoscale or microscale width and length. The nanofilm assemblies prepared according to the invention are highly conductive and can be used in the fabrication of a wide variety of microscale and nanoscale electronic devices.

Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

Abstract: A thin film transistor (TFT) array panel and method of manufacturing the same are provided. The method includes forming a semiconductor layer and an ohmic contact layer over a gate line, forming a conductive layer on the ohmic contact layer, forming a first photosensitive layer pattern on the conductive layer, etching the conductive layer using the first photosensitive layer pattern as an etching mask, etching the ohmic contact layer and the semiconductor layer by a fluorine-containing gas, a chloride-containing gas, and an oxygen (O2) gas using the first photosensitive layer pattern as an etching mask, removing the first photosensitive layer pattern to a predetermined thickness to form a second photosensitive layer pattern, and etching the conductive layer using the second photosensitive layer pattern as an etching mask to expose a part of the ohmic contact layer.

Abstract: A nanochannel delivery device and method of manufacturing and use. The nanochannel delivery device comprises an inlet, an outlet, and a nanochannel. The nanochannel may be oriented parallel to the primary plane of the nanochannel delivery device. The inlet and outlet may be in direct fluid communication with the nanochannel.

Abstract: The present invention relates generally to electro-optically active waveguide segments, and more particularly to the use of a selective voltage input to control the phase, frequency and/or amplitude of a propagating wave in the waveguide. Particular device structures and methods of manufacturing are described herein.