Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.

Abstract: A method of forming an array of piezoelectric actuators on a membrane (18) which includes the steps of preparing a piezoelectric comb-like structure having an array of islands that are integrally connected by a continuous top portion and that form piezoelectric layers of the actuators, the islands having an electrode at a bottom side, attaching the comb-like structure with its bottom electrode to a surface of the membrane, removing the continuous top portion of the comb-like structure to thereby separate the actuators from one another, and forming top electrodes on the top surfaces of the piezoelectric layers of the actuators.

Abstract: According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor substrate via layers having a relative dielectric constant smaller than that of SiO2, planarizing the surface of the to-be-processed film, and etching the planarized surface of the to-be-processed film.

Abstract: A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the raised region. A second chemical mechanical polishing process is performed to planarize the wafer using the blanket stop layer as a stop layer when the layer is lower than or at a same level as the blanket stop layer or using the layer as a stop layer when the blanket stop layer is lower than or at a same level as the layer, or a selective dry etch is performed to remove the layer in the raised region. Thus, the layer in the raised region can be easily removed without occurrence of dishing in the non-raised region which is protected by the blanket stop layer.

Abstract: The present invention relates to an additive mixture comprising a polyacrylate salt, an acid ester, and a defoamer agent. A polishing composition and a polishing method used for polishing a glass substrate are also provided.

Abstract: An efficient polishing method for polishing an alloy material to have an excellent mirror surface is provided. The alloy material contains a main component and 0.1% by mass or more of an element that has a Vickers hardness (HV) different from the Vickers hardness of the main component by 5 or more. A polishing composition used in the polishing method contains abrasive grains and an oxidant. The alloy material is preferably an aluminum alloy, a titanium alloy, a stainless steel, a nickel alloy, or a copper alloy. It is also preferable that the alloy material is subjected to preliminary polishing before being subjected to polishing in which the polishing composition is used.

Abstract: The present invention provides methods utilizing current nano-technological processes for fabricating a range of micro-devices with significantly expanded capabilities, unique functionalities at microscopic levels, enhanced degree of flexibilities, reduced costs and improved performance in the fields of bioscience and medicine. Such fabricated micro-devices have significant improvements in many areas over the existing, conventional methods, which include, but are not limited to reduced overall costs, early disease detection, targeted drug delivery, targeted disease treatment and reduced degree of invasiveness in treatment. Compared with existing, conventional approaches, the said inventive approach disclosed in this patent application is much more microscopic, sensitive, accurate, precise, flexible and effective.

Abstract: Described herein are compositions, kits and methods for polishing sapphire surfaces using compositions having colloidal aluminosilicate particles in an aqueous acidic solution. In some aspects, the methods for polishing a sapphire surface may include abrading a sapphire surface with a rotating polishing pad and a polishing composition. The polishing composition may include an amount of a colloidal aluminosilicate and may have a pH of about 2.0 to about 7.0.

Abstract: A polishing composition of the present invention is used for polishing an object containing a phase-change alloy and is characterized by containing ammonium ions (NH4+). The polishing composition may further contain abrasive grains, such as colloidal silica.

Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

Abstract: A processing method of a substrate which includes: a first bonding step which bonds a ring-shaped first support member to a first surface of the substrate along the outer periphery of the substrate; a first processing step which processes the substrate; and a first separating step which separates the first support member from the substrate by separation at the bonded position.

Abstract: An object of the invention is to effectively remove particles on the glass substrate surfaces, even in the case wherein abrasive particles having a small particle size is used in the polishing step of the glass substrate and a supersonic treatment is performed at a high frequency at the supersonic cleaning step after the polishing step. In a manufacturing method of a glass substrate for a magnetic disk comprising a polishing step for performing polishing of the glass substrate and a supersonic cleaning step for performing supersonic cleaning of the glass substrate after the polishing step, the polishing step uses abrasive particles having a particle size of 10 nm to 30 nm and a first supersonic cleaning is performed at a frequency of 300 kHz to 1,000 kHz to form secondary particles and then a second supersonic cleaning is performed at a frequency of 30 kHz to 100 kHz in the supersonic cleaning step.

Abstract: A method for manufacturing a glass substrate for a magnetic disk comprises a surface grinding step of processing a mirror-surface plate glass, having a main surface in the form of a mirror surface, to a required flatness and surface roughness using fixed abrasive particles. The method comprises, before the surface grinding step using the fixed abrasive particles, a surface roughening step of roughening the surface of the mirror-surface plate glass by frosting.

Abstract: A combination, composition and associated method for chemical mechanical planarization of a tungsten-containing substrate are described herein which afford tunability of tungsten/dielectric selectivity and low selectivity for tungsten removal in relation to dielectric material. Removal rates for both tungsten and dielectric are high and stability of the slurry (e.g., with respect to pH drift over time) is high.

Abstract: A method to fabricate an imprint mould in three dimensions including at least: a) forming at least one trench, of width W and depth h, in a substrate, thereby forming three surfaces including, a bottom of the at least one trench, sidewalls of the at least one trench, and a remaining surface of the substrate, called top of the substrate; b) forming alternate layers in the at least one trench, each having at least one portion perpendicular to the substrate, in a first material and in a second material which can be selectively etched relative to the first material; and c) selectively etching said portions of the layers perpendicular to the substrate.

Abstract: A surface treatment method for a flexible substrate is provided. A flexible insulation substrate is provided. A surface of the flexible insulation substrate has at least one defect. A plasma etching is performed on the flexible insulation substrate to smooth a profile of the defect.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar by using GCIB method, where a lowermost portion of an upper surface of the insulating layer is lower than an upper surface of the pillar, and polishing the insulating layer and the pillar to expose a head of the pillar by using CMP method, where an end point of the polishing is the lowermost portion of the upper surface of the insulating layer.

Abstract: Disclosed are a method for manufacturing a solar cell by processing a surface of a silicon substrate for a solar cell, a solar cell manufactured by the method, and a substrate processing system for performing the method. The method for manufacturing a solar cell comprises protrusion forming step including wet-etching process and for forming a plurality of minute protrusions on a light receiving surface of a crystalline silicon substrate, and planarization step of planarizing the bottom surface, the opposite surface to the light receiving surface of the substrate during or after the protrusion forming step.

Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH?3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<)2 ?m in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm.

Abstract: The present application discloses provides a method for planarizing an interlayer dielectric layer, comprising the steps of: providing a multilayer structure including at least one sacrificial layer and at least one insulating layer under the sacrificial layer on the semiconductor substrate and the first gate stack, performing a first RIE on the multilayer structure, in which a reaction chamber pressure is controlled in such a manner that an etching rate of the portion of the at least one sacrificial layer at a center of a wafer is higher than that at an edge of the wafer, so as to obtain a concave etching profile; performing a second RIE on the multilayer structure to completely remove the sacrificial layer and a part of the insulating layer, so as to obtain the insulating layer having a planar surface which serves as an interlayer dielectric layer.

Abstract: The present invention provides a polishing technique capable of polishing, at a high speed, a substrate containing Al and having high hardness, such as single-crystal sapphire substrate, and capable of providing a polished surface of high accuracy. The present invention relates to a polishing slurry for polishing a substrate containing aluminum, comprising abrasive grains, an inorganic boron compound having a solubility in water at 20° C. of 0.1 g/100 g—H2O or more, and water. In the present invention, it is preferable that the content of the inorganic boron compound is 0.1% by mass to 20% by mass in terms of boron atoms based on the polishing slurry.

Abstract: A jig includes a wafer including an accommodation groove configured to accommodate a capacitive micromachined ultrasonic transducer (cMUT) when flip chip bonding is performed, and a separation groove formed in a bottom surface of the accommodation groove, the separation groove having a bottom surface that is spaced apart from thin films of the cMUT that face the bottom surface of the separation groove when the cMUT is seated on portions of the bottom surface of the accommodation groove.

Abstract: A method for fabricating a patterned polyimide film, wherein the method comprises steps as follows: Firstly, a polyimide film is provided on a substrate. A wet planarization process is then performed to remove a portion of the polyimide film. Subsequently the planarized polyimide film is patterned.

Abstract: Methods of determining a polishing endpoint are described using spectra obtained during a polishing sequence. In particular, techniques for using only desired spectra, faster searching methods and more robust rate determination methods are described.

Abstract: An aqueous polishing composition comprising (A) abrasive ceria particles and (B) amphiphilic nonionic surfactants selected water-soluble and water-dispersible, linear and branched polyoxyalkylene blockcopolymers of the general formula I: R[(B1)m/(B2)nY]p (I), wherein the indices and the variables have the following meaning: m, n, and p integers>1; R hydrogen atom or monovalent or polyvalent organic residue, except C5-C20 alkyl groups; (B1) block of oxyethylene monomer units; (B2) block of substituted oxyalkylene monomer units wherein the substituents are selected from two methyl groups, alkyl groups of more than two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and Y hydrogen atom or monovalent organic residue, except C5-C20 alkyl groups; with the proviso that when (B) contains more than one block (B1) or (B2) two blocks of the same type are separated by a block of the other type.

Abstract: The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing process. The composition comprises (a) a catalytic oxidant comprising a water-soluble peroxometalate complex, an oxidizable precursor of a peroxometalate complex, or a combination thereof, (b) a particulate abrasive; and (c) an aqueous carrier. The peroxometalate complex and the precursor thereof each have a reduced form that is oxidizable by hydrogen peroxide to regenerate the peroxometalate complex during chemical-mechanical polishing. CMP methods for polishing ruthenium-containing surfaces with the CMP composition are also provided.

Abstract: Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.

Abstract: A method of fabricating a thin liquid crystal display device including a glass substrate having a flat surface. The method includes etching at least one surface of a liquid crystal display, panel, and grinding the surface of the liquid crystal display panel so as to planarize the etched liquid crystal display panel.

Abstract: An aqueous polishing composition comprising (A) at least one water-soluble or water-dispersible compound selected from the group consisting of N-substituted diazenium dioxides and N?-hydroxy-diazenium oxide salts; and (B) at least one type of abrasive particles; the use of the compounds (A) for manufacturing electrical, mechanical and optical devices and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

Abstract: An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical de

Abstract: To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

Abstract: An aqueous polishing composition has been found, the said aqueous polishing composition comprising (A) at least one type of abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) at least one water-soluble polymer selected from the group consisting of linear and branched alkylene oxide homopolymers and copolymers; and (C) at least one anionic phosphate dispersing agent; and a process for polishing substrate materials for electrical, mechanical and optical devices making use of the aqueous polishing composition.

Abstract: An aqueous polishing composition comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9 as evidenced by the electrophoretic mobility; (B) water-soluble and water-dispersible hydroxy group containing components selected from (b1) aliphatic and cycloaliphatic hydroxycarboxylic acids, wherein the molar ratio of hydroxy groups to carboxylic acid groups is at least 1; (b2) esters and lactones of the hydroxycarboxylic acids (b1) having at least one hydroxy group; and (b3) mixtures thereof; and (C) water-soluble and water-dispersible polymer components selected from (c1) linear and branched alkylene oxide polymers; (c2) linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) polymers; and (c3) cationic polymeric flocculents having a weight average molecular weight of less than 100,000 Dalton.; and a process for polishing substrate materials for electrical, mechanical and optical devices.

Abstract: According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a processing solution by bringing the surface to be processed into contact with or close proximity with the surface of a solid-state plate on which fluorine is adsorbed. The bonding energy between fluorine and the solid-state plate is lower than that between fluorine and silicon.

Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

Abstract: A method for producing a dielectric layer on the surface of a component is described. In particular embodiments, a dielectric layer having a planar surface can be generated over a substrate topography having raised structures. In a trimming process, a component property, which depends on the thickness or the third topography of the dielectric layer, is adjusted.

Abstract: A method for encapsulating a magnetic recording head including coating at least a portion of a magnetic recording head containing a recording gap with a first layer of at least one coating material, including silicon nitride, the first layer of at least one coating material having a first removal rate, coating at least a portion of the magnetic recording head containing a recording gap and coated with the first layer of at least one coating material with a second layer of at least one coating material, including aluminum oxide, the second layer of at least one coating material having a second removal rate higher than the first removal rate, and removing at least a portion of the second layer of at least one coating material via a removal process, including chemical-mechanical polishing, lapping, or vacuum processing to at least partially planarize the surface of the recording gap.

Abstract: According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.

Abstract: The invention provides a method for manufacturing a transistor which includes: providing a substrate having a plurality of transistors formed thereon, wherein each transistor includes a gate; forming a stressed layer and a first oxide layer on the transistors and on the substrate successively; forming a sacrificial layer on the first oxide layer; patterning the sacrificial layer to remove a part of the sacrificial layer which covers on the gates of the transistors; forming a second oxide layer on the residual sacrificial layer and on a part of the first oxide layer which is exposed after the part of the sacrificial layer is removed; performing a first planarization process to remove a part of the second oxide layer located on the gates of the transistors; performing a second planarization process to remove the residual second oxide layer; and performing a third planarization process to remove the stressed layer.

Abstract: A method for manufacturing a mirror device is presented. The method includes forming a mirror from a first substrate and forming a hinge/support structure from a second substrate. The hinge/support structure is formed with a recessed region and a torsional hinge region. The mirror is attached to the hinge/support structure at the recessed region. Further, a driver system is employed to cause the mirror to pivot about the torsional hinge region.

Abstract: A defect distribution in the vicinity of a surface of a glass substrate is inspected by a positron annihilation gamma ray measurement. A buffer layer including a brittle layer and/or a coating layer is created on the surface of the glass substrate. The brittle layer is formed by irradiating a gas cluster ion on the surface to deteriorate the glass. The coating layer is formed by coating the surface with a soft substance. Next, a thickness of the created buffer layer is measured by a positron annihilation gamma ray measurement. The surface of the glass substrate is then cleaned. To create a slurry, abrasive particles for the slurry are uniformly scattered on a polishing implement for polishing the glass substrate and a liquid component for the slurry is added thereto. The glass substrate is then chemically mechanically polished from the buffer layer with the slurry.

Abstract: Methods and devices for high-throughput manufacturing of a solar cell with a diode is provided.

Abstract: A method for planarizing a semiconductor device includes providing a substrate having at least one opening therein, each opening defining a lower portion and an upper portion; coating a light sensitive material layer over the substrate, the light sensitive material layer covering the lower and upper portions of the at least one opening; etching back the light sensitive material layer to expose the upper portion of the at least one opening; repeating the steps of coating and etching to remove a predetermined amount below the upper portion of the at least one opening; depositing an insulating layer over the substrate; and planarizing the insulating layer until the upper portion of the at least one opening is exposed.

Abstract: Adaptive imprint planarization provides a surface having desired shape characteristics. Generally, topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics. Additionally, adaptive imprint planarization compensates for parasitic effects of the imprinting process.

Abstract: A method for manufacturing an aluminosilicate glass substrate for a hard disk of the present invention includes polishing an aluminosilicate glass substrate to be polished with a polishing composition that includes silica particles, a polymer having a sulfonic acid group, and water, wherein an adsorption constant of the polymer having the sulfonic acid group on aluminosilicate glass is 1.5 to 5.0 L/g. The polymer having the sulfonic acid group is preferably a polymer having an aromatic ring. The weight average molecular weight of the polymer having the sulfonic acid group is 3000 to 100000.

Abstract: The invention provides a color filter producing method that is based on dry etching and makes it possible to produce a color filter which has fine and rectangular pixels and is excellent in flatness, and color filters produced by the method. The method is a color filter producing method of forming a first colorant-containing layer on a support, removing the first colorant-containing layer corresponding to a region where a second colorant-containing layer is to be formed by dry etching, forming the second colorant-containing layer so as to be embedded into the layer-removed region, removing the first and second colorant-containing layers corresponding to a region where a third colorant-containing layer is to be formed by dry etching, forming the third colorant-containing layer so as to be embedded into the layer-removed region, and removing the colorant-containing layers laminated on other colorant-containing layers.

Abstract: Exemplary embodiments provide methods for planarizing a semiconductor surface. In embodiments, the disclosed planarizing methods can include a chemical mechanical planarization (CMP) process using a slurry-free solution that includes hydrogen peroxide (H2O2) but is free of particles such as oxide particles. A semiconductor surface (e.g., germanium) can then be planarized to provide a desirable surface roughness. In embodiments, high-quality Group III-V materials can be formed on the planarized semiconductor surface.

Abstract: Provided is a process for making a magnetic recording medium having a magnetically partitioned magnetic recording patterns, which comprises the following three steps (1), (2) and (3), conducted in this order: (1) a step of forming a magnetic layer on a non-magnetic substrate; (2) a step of removing surface layer portions of regions for magnetically partitioning the magnetic layer; and (3) a step of exposing the thus-exposed regions of the magnetic layer, from which the surface layer portions have been removed, to a reactive plasma or a reactive ion, to modify the magnetic characteristics of the regions of magnetic layer, whereby a magnetic recording pattern is formed which are magnetically partitioned by the regions of magnetic layer having the modified characteristics. Thus, a magnetic recording medium having an enhanced recording density and minimizing letter bleeding at writing can be made with a high efficiency.

Abstract: Methods of fabricating an integrated circuit device, such as a thin film resistor, are disclosed. An exemplary method includes providing a semiconductor substrate; forming a resistive layer over the semiconductor substrate; forming a hard mask layer over the resistive layer, wherein the hard mask layer includes a barrier layer over the resistive layer and a dielectric layer over the barrier layer; and forming an opening in the hard mask layer that exposes a portion of the resistive layer.

Abstract: A method of manufacturing a semiconductor device, includes: (a) obtaining a surface of a polishing target, wherein an insulating film and a metal film are exposed; and (b) polishing the surface having the exposed insulating film and the exposed metal film. The step (b) includes; (b1) polishing the surface in a condition with high frictional force, and (b2) polishing the surface in a condition with usual frictional force lower than the high frictional force after the step (b1).