Abstract: According to one embodiment, a sensor includes a movable member including a first movable portion and a second movable portion, and a first fixed member. At least a portion of the first fixed member is between the first movable portion and the second movable portion. The first fixed member includes a first fixed counter portion opposing the first movable portion, and a second fixed counter portion opposing the second movable portion. The first fixed counter portion includes a first fixed protruding portion protruding toward the first movable portion. The second fixed counter portion includes a second fixed protruding portion protruding toward the second movable portion.

Abstract: An etching method is provided for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride by performing plasma processing on a target object including the first region and the second region. In the etch method, first, a plasma of a processing gas including a fluorocarbon gas is generated in a processing chamber where the target object is accommodated. Next, the plasma of the processing gas including the fluorocarbon gas is further generated in the processing chamber where the target object is accommodated. Next, the first region is etched by radicals of fluorocarbon contained in a deposit which is formed on the target object by the generation and the further generation of the plasma of the processing gas containing the fluorocarbon gas. A high frequency powers used for the plasma generation is smaller than a high frequency power used for plasma further generation.

Abstract: One or more photonic structures are formed within one or more layers over a surface of a substrate, and multiple trenches are formed through the one or more layers housing devices coupled to one or more of the photonic structures. The trenches may include: a first trench that has a bottom surface within the substrate that has a first surface topology characterized by a first surface roughness at a first depth within the substrate relative to the surface of the substrate, and a second trench that has a bottom surface within the substrate that has a second surface topology characterized by a second surface roughness at a second depth within the substrate relative to the surface of the substrate. The first surface roughness may be greater than the second surface roughness, and the second depth may be greater than the first depth.

Abstract: This application relates to a composite part that can include a non-metal layer having attachment features, and a metal part that is joined with the non-metal layer. The metal part can include a plurality of interlocking structures that are disposed at an external surface of the metal part, where each of the interlocking structures can include an opening characterized as having a first width, and an undercut region, where the opening leads into the undercut region, and the undercut region is characterized as having a second width that is greater than the first width such that the undercut region captures and retains one of the attachment features of the non-metal layer.

Abstract: A method of forming a bonded assembly includes providing a first semiconductor die containing a first substrate, first semiconductor devices, and first bonding pads that are electrically connected to a respective node of the first semiconductor devices, forming a first oxidation barrier layer on physically exposed surfaces of the first bonding pads, providing a second semiconductor die containing a second substrate, second semiconductor devices, and second bonding pads that are electrically connected to a respective node of the second semiconductor devices, and bonding the second bonding pads to the first bonding pads with at least the first oxidation barrier layer located between the respective first and second bonding pads.

Abstract: A three-dimensional semiconductor memory device includes a substrate including a peripheral circuit region and a cell array region, a plurality of peripheral gate stacks disposed in the peripheral circuit region, and an electrode structure disposed in the cell array region. The electrode structure includes a lower electrode, a lower insulating layer disposed on the lower electrode, and upper electrodes and upper insulating layers alternately stacked on the lower insulating layer. The lower insulating layer extends from the cell array region into the peripheral circuit region and covers the peripheral gate stacks. The lower insulating layer includes a first lower insulating layer and a second lower insulating layer sequentially stacked on one another. The first lower insulating layer includes a first insulating material, and the second lower insulating layer includes a second insulating material different from the first insulating material.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a second layer. The method includes forming a first recess and a second recess in the first layer. The first recess is narrower than the second recess. The method includes forming a first covering layer in the first recess and the second recess. The first covering layer in the first recess is thinner than the first covering layer in the second recess. The method includes removing the first covering layer in the first recess and the first covering layer covering the first bottom surface to form a first opening in the first covering layer in the second recess. The method includes removing the first portion and the second portion through the first recess and the first opening.

Abstract: A nanoscale structure includes an array of pillars over an underlying layer, a separation wall layer including first separation walls formed over sidewalls of the pillars, and a block co-polymer (BCP) layer formed over the separation wall layer and filling gaps between the pillars. The BCP layer is phase-separated to include first domains that provide second separation walls formed over the first separation walls and second domains that are separated from each other by the first domains.

Abstract: Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.

Abstract: A carbon-metal oxide composite material comprising: (i) carbon-carbon composite particles in which an amorphous carbon black core is bonded to crystalline graphitic carbon shells; and (ii) a metal oxide material bonded with said carbon-carbon composite particles, wherein said metal oxide material is included in an amount of at least about 10 wt. % by weight of said carbon-carbon composite particles and metal oxide material. Alkali-ion batteries containing the above-described composite as anode are also described. Methods for producing the above-described composite are also described. The method can include, for example, subjecting pulverized rubber tire waste to a sulfonation process and pyrolyzing the sulfonated rubber to produce the carbon-carbon composite particles, as described above, followed by admixing and compounding a metal oxide material with the carbon-carbon composite particles.

Abstract: According to an embodiment, a method of operating a microelectromechanical systems (MEMS) transducer that has a membrane includes transducing between out-of-plane deflection of the membrane and voltage on a first pair of electrostatic drive electrodes using the first pair of electrostatic drive electrodes. The first pair of electrostatic drive electrodes is formed on the membrane extending in an out-of-plane direction and form a variable capacitance between the first pair of electrostatic drive electrodes.

Abstract: A method and apparatus are provided to prevent or reduce stiction of a MEMS device. The MEMS device may include a protrusion extending from a surface of the MEMS device. During manufacture, the protrusion may be connected across an opening in the MEMS device to a sidewall of the substrate. Before manufacture of the MEMS device is completed, at least a portion of the protrusion connecting the MEMS device to the substrate may be removed. During operation, the protrusion may provide stiction prevention or reduction for the surface from which the first protrusion may extend. A plurality of protrusions may be formed along a plurality of surfaces for the MEMS device to prevent or reduce stiction along the corresponding surfaces. Protrusions may also be formed on devices surrounding or encapsulating the MEMS device to prevent or reduce stiction of the MEMS device to the surrounding or encapsulating devices.

Abstract: Embodiments of the present invention provide methods and structures for protecting gates during epitaxial growth. An inner spacer of a first material is deposited adjacent a transistor gate. An outer spacer of a different material is deposited adjacent the inner spacer. Stressor cavities are formed adjacent the transistor gate. The inner spacer is recessed, forming a divot. The divot is filled with a material to protect the transistor gate. The stressor cavities are then filled. As the gate is safely protected, unwanted epitaxial growth (“mouse ears”) on the transistor gate is prevented.

Abstract: Implementations disclosed and claimed herein include a method of write head core located in a slider, the write head core comprising a first end operative to serve as a write pole, a second end operative to serve as a return pole, wherein the first end comprises a substantially smaller cross-sectional area than the second end, and wherein the write head core has a substantially smooth curvature.

Abstract: A method for forming a layered structural member may include providing a first outer layer of material and a second outer layer of material, placing between the first outer layer and the second outer layer a layer of core material, and placing between the first outer layer and the second outer layer a piezoelectric transducer, the piezoelectric transducer configured to convert an audio signal received by the piezoelectric transducer into at least one of a mechanical pressure, acceleration, strain and force causing the layered structured member to generate sound.

Abstract: Disclosed are self-assembling diblock copolymers of the formula (I): wherein R1-R4, n, and m are as described herein, which find use in preparing self-assembled structures and porous membranes. Embodiments of the self-assembled structures contain the diblock copolymer in a cylindrical morphology. Also disclosed is a method of preparing such copolymers.

Abstract: The method of the present disclosure is a method for producing a porous polymer film including: irradiating a strip-shaped polymer film with an ion beam while moving the polymer film transversely to the ion beam, so as to form a polymer film that has collided with ions in the beam; and chemically etching the formed polymer film so as to form openings and/or through holes corresponding to tracks left by the colliding ions in the polymer film. The ion beam (11) with which the polymer film is irradiated is obtained by folding a tail of an original beam (51) inwardly toward a center of the original beam by nonlinear focusing. The original beam is composed of ions accelerated in a cyclotron and has a cross-sectional intensity distribution profile in which an intensity is maximum at the center of the original beam and continuously decreases from the center toward the tail of the original beam, and the profile is an intensity distribution profile in a cross section perpendicular to a direction of the original beam.

Abstract: Disclosed are self-assembled structures formed from a self-assembling diblock copolymer of the formula (I): wherein R1-R4, n, and m are as described herein, which find use in preparing porous membranes. In an embodiment, the diblock copolymer is present in the self-assembled structures in a cylindrical morphology. Also disclosed is a method of preparing a self-assembled structure, which involves spin coating a polymer solution containing the diblock copolymer to obtain a thin film, followed by solvent annealing of the film.

Abstract: A nanoimprinting mold includes: a mold main body having a fine pattern of protrusions and recesses on a surface thereof; and a mold release layer formed on the surface of the mold main body. The mold release layer is formed within a mold release layer forming region, which is a region of the mold main body that includes a patterned region where the fine pattern of protrusions and recesses is formed and has an outer edge positioned outside the outer edge of the patterned region. An outer peripheral mold release layer has a thickness distribution in which the thickness of the outer peripheral mold release layer is locally maximal at positions outside the outer edge of the patterned region, substantially continuously along the entire periphery. Thereby, it becomes possible to restrict the region in which resist flows during nanoimprinting, without employing a mesa type substrate.

Abstract: There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

Abstract: A coated part is exposed to a gas flow. The gas flow has a characteristic gas flow direction distribution over a surface of the coated part. The coated part has a substrate having a substrate surface and a coating over the substrate surface. The coating comprises at least one coating layer. A first such layer is columnar and has a column boundary direction distribution. The column boundary direction distribution is selected for partial local alignment with the gas flow direction distribution.

Abstract: The present invention relates to a method for manufacturing a carbon-sulfur composite, a carbon-sulfur composite manufactured by the method, and an electrochemical device including the same. Since the carbon-sulfur composite manufactured by the carbon-sulfur composite manufacturing method of the present invention includes the hollow carbon ball having the inner hollow which is uniformly filled with sulfur, a sulfur content increases to increase a capacity characteristic increases. In addition, even though sulfur is changed into a liquid state during charge and discharge processes, an electrode structure is not destroyed to realize a stable lifetime characteristic.

Abstract: Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a substrate and undesired portions of the deposited thin film or thin films are removed to produce processed elements with reduced characteristic dimensions. Graphene layers are generated on selected processed elements or exposed portions of the substrate after removal of the processed elements. Multiple sets of graphene layers can be generated, each with a different physical characteristic, thereby producing a graphite-based device with multiple functionalities in the same device.

Abstract: A method of manufacturing an inlaid ceramic element for a timepiece including: a) forming a ceramic or cermet body; b) etching at least one recess in one face of the ceramic or cermet body, each at least one recess forming a pattern cavity for a decoration; c) changing a surface state of a bottom of the at least one recess to increase contact surface thereof; d) filling the at least one recess with a composite ceramic to form the decoration; e) flattening the composite ceramic so that the composite ceramic remains only in a hollow of the at least one recess.

Abstract: A method of preparing a substantially planar microdevice comprising a plurality of reservoirs is provided. In general, the method comprises forming a plurality of microdevices comprising a plurality of reservoirs from a planar layer of a biocompatible polymer. The method also comprises depositing one or more bioactive agents into the reservoirs. The microdevice is configured to attach to a target tissue and release the bioactive agent in close proximity to the tissue.

Abstract: Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.

Abstract: Provided is a plating method of a circuit substrate comprising a conductive pattern in which a metal layer containing at least silver and copper is exposed on an outer surface. The plating method comprises: step (A) of treating the circuit substrate with a first liquid agent containing an oxidizing agent; step (B) of treating the circuit substrate after the step (A) with a second liquid agent which dissolves copper oxide, and thereby removing copper oxide from the conductive pattern's surface; step (C) of treating the circuit substrate after the step (B) with a third liquid agent whose rate of dissolving silver oxide (I) at 25° C. is 1000 times or more faster than its rate of dissolving copper (0) at 25° C., and thereby removing silver oxide from the conductive pattern's surface; and step (D) of performing electroless plating on the conductive pattern of the circuit substrate after the step (C).

Abstract: A method for manufacturing composite of resin and other materials includes the following steps. A shaped piece made by materials different with resin is provided, and is degreased and cleaned. A resist layer with a lot of location holes is formed on the surface of the heterogeneous member by nano-imprint lithography, and a lot of small holes are formed on the surface of the heterogeneous member while the resist layer is removed. Then the heterogeneous member is inserted in an injection mold, and molten crystalline thermoplastic resin is injected into the mold, thus the resin embedded into the holes and bonding with the shaped piece. The method is environmentally friendly and suitable for mass production.

Abstract: The present disclosure relates to a method to form a plurality of openings within a substrate with a single photo exposure and a single etch process. A photoresist layer is disposed over a substrate and aligned with a photomask, wherein the photomask comprises a transparent area, a grayscale area, and an opaque area. The photomask and substrate are exposed to radiation comprising a single illumination step to form a first 3-dimensional pattern within the photoresist layer. The 3-dimensional pattern comprises a first opening comprising a first thickness formed by transmitting the radiation through the transparent area with full intensity, and a second opening comprising a second thickness formed by transmitting the radiation through the grayscale area with partial intensity. The 3-dimensional pattern is transferred to form a plurality of openings of varying depths within the substrate through a single etch step.

Abstract: Disclosed are block copolymer nanostructures formed on surface patterns different from nanostructure of the block copolymer and preparation methods thereof.

Abstract: The present disclosure is directed to systems and methods for adjusting adhesion strength between materials during semiconductor sensor processing. One or more embodiments are directed to using various surface treatments to a substrate to adjust adhesion strength between the substrate and a polymer. In one embodiment, the surface of the substrate is roughened to decrease the adhesive strength between the substrate and the polymer. In another embodiment, the surface of the substrate is smoothed to increase the adhesive strength between the substrate and the polymer.

Abstract: A method of forming a conductive via in a substrate includes forming a via hole covered by a dielectric layer followed by an annealing process. The dielectric layer can getter the mobile ions from the substrate. After removing the dielectric layer, a conductive material is formed in the via hole, forming a conductive via in the substrate.

Abstract: A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

Abstract: The invention relates to a method of manufacturing an inlaid ceramic element for a timepiece comprising the following steps: a) forming a ceramic body; b) etching at least one recess in one face of the ceramic body, each at least one recess forming the pattern cavity for a decoration; c) changing the surface state of the bottom of said at least one recess in order to increase the contact surface thereof; d) depositing, by thermal spraying, a second ceramic material above said at least one recess in order to totally fill said at least one recess; e) flattening said second ceramic material so that said second ceramic material remains only in the hollow of said at least one recess.

Abstract: A metal composite, a method of preparing the metal composite, a metal-resin composite, and a method of preparing the metal-resin composite are provided. The metal composite comprises: a metal substrate comprising a first layer formed on a surface of the metal substrate and an anodic oxidation layer formed on the first layer. The first layer comprises a first pore having an average diameter of about 10 nanometers to about 1 millimeter, and the metal composite comprises aluminum alloy or aluminum. The anodic oxidation layer comprises a second layer contacted with the first layer of the metal substrate and a third layer formed on an outer surface of the second layer, and the second layer comprises a second pore having an average diameter of about 10 nanometers to about 800 microns, and the third layer comprises a third pore having an average diameter of about 10 nanometers to about 800 microns.

Abstract: A method is disclosed for forming a row of mutually spaced lithography features on a substrate, such as contact electrodes for a NAND device. The method involves forming and/or using a narrow slot over the substrate defined between the edge of a hard mask layer and a side wall of a trench in a resist layer overlying the edge and the substrate. A self-assemblable block copolymer is deposited and ordered in the trench for use as a further resist for patterning the substrate along the slot. The method allows for a sub-resolution contact array to be formed using UV lithography by overlapping the trench with the hard mask edge to provide the narrow slot in which the contact electrodes may be formed.

Abstract: A method for cleaning a dielectric and metal structure within a microelectronic structure uses an oxygen containing plasma treatment, followed by an alcohol treatment, in turn followed by an aqueous organic acid treatment. Another method for cleaning a dielectric and metal structure within a microelectronic structure uses an aqueous surfactant treatment followed by an alcohol treatment and finally followed by an aqueous organic acid treatment. The former method may be used to clean a plasma etch residue from a dual damascene aperture. The second method may be used to clean a chemical mechanical polish planarizing residue from a dual damascene structure. The two methods may be used sequentially, absent any intervening or subsequent sputtering method, to provide a dual damascene structure within a microelectronic structure.

Abstract: Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board.

Abstract: A planarization process may planarize a media disk that has data trenches between data features and larger servo trenches between servo features. A filler material layer is deposited on the media disk and provides step coverage of the trenches. The filler material has data recesses over the data trenches and servo recesses over the servo trenches that must be removed to produce a planar media surface. A first planarization process is used to remove the data recesses and a second planarization process is used to remove the servo recesses.

Abstract: An apparatus used for forming stud bumps may be formed by providing a first clamp plate comprising a clamping surface, forming a notcher on the clamping surface, and forming a contact stopper on the clamping surface. The apparatus may include a clamp that includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method for forming stud bumps includes bonding wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface.

Abstract: Electrodes, energy storage devices using such electrodes, and associated methods are disclosed. In an example, an electrode for use in an energy storage device can comprise porous silicon having a plurality of channels and a surface, the plurality of channels opening to the surface; and a structural material deposited within the channels; wherein the structural material provides structural stability to the electrode during use.

Abstract: An interventional medical device and manufacturing method thereof, the interventional medical device comprising a stent body (1); the stent body (1) is provided with a drug releasing structure on the surface, the drug in the drug releasing structure being a drug for inhibiting adventitial fibroblast proliferation. When the interventional medical device is implanted into a human body, the drug for inhibiting the adventitial fibroblast proliferation can be slowly released into vessel wall cells in contact with the stent body (1), thus inhibiting the proliferation of the adventitial fibroblasts, promoting vascular compensatory expansion, and reducing the incidence rate of instent restenosis.

Abstract: A tunneling magnetoresistive sensor has an extended pinned layer wherein both the MgO spacer layer and the underlying ferromagnetic pinned layer extend beyond the back edge of the ferromagnetic free layer in the stripe height direction and optionally also beyond the side edges of the free layer in the trackwidth direction. A patterned photoresist layer with a back edge is formed on the sensor stack and a methanol (CH3OH)-based reactive ion etching (RIE) removes the unprotected free layer, defining the free layer back edge. The methanol-based RIE terminates at the MgO spacer layer without damaging the underlying reference layer. A second patterned photoresist layer may be deposited and a second methanol-based RIE may be performed if it is desired to have the reference layer also extend beyond the side edges of the free layer in the trackwidth direction.

Abstract: A method fabricates a magnetic transducer. A sacrificial leading shield is provided on an etch stop layer. A nonmagnetic layer is provided on the sacrificial leading shield. A pole trench is formed in the nonmagnetic layer and on the sacrificial leading shield. A pole is formed. The pole has a bottom and a top wider than the bottom in a pole tip region. Part of the pole in the pole tip region is in the pole trench and at the ABS location. The sacrificial leading shield and part of the nonmagnetic layer adjacent to the pole are removed. An air bridge thus resides in place of the sacrificial leading shield between the portion of the pole and the etch stop layer. As least one shield layer is provided. The at least one shield layer substantially fills the air bridge and form a monolithic shield including a leading and side shields.

Abstract: A thermal management device including a first face configured to be in contact with a hot source and a second face opposite the first face configured to be in contact with a cold source, and at least one network of cells filled with a solid/liquid phase-change material located in a cavity between the first and second faces, wherein the cells include walls formed of carbon nanotubes, wherein the nanotubes extend roughly from the first to the second face, thermally connecting the first face to the second face.

Abstract: Described is a process for producing an inkjet printhead comprising an aperture face having an oleophobic surface. The process includes forming an aperture plate by disposing a silicon layer on an aperture plate; using photolithography to create a textured pattern on an outer surface of the silicon layer; and chemically modifying the textured surface by disposing a conformal, oleophobic coating on the textured surface. The oleophobic aperture plate may be used as a front face surface for an inkjet printhead.

Abstract: A method for integrally molding a metal and a resin and a metal-resin composite structure obtainable by the same are provided. The method comprises forming a nanopore in a surface of a metal sheet; melting a thermoplastic resin on the surface of the metal sheet formed with the nanopore; and injection molding the thermoplastic resin onto the surface of the metal sheet. The thermoplastic resin includes a mixture of a main resin and a polyolefin resin, the main resin is a polycarbonate, and the polyolefin resin has a melting point of about 65° C. to about 105° C.

Abstract: A method of preparing aluminum alloy-resin composite and an aluminum alloy-resin composite obtained by the same are provided. of the method comprises: S1: anodizing a surface of an aluminum alloy substrate to form an oxide layer on the surface, the oxide layer including nanopores; S2: immersing the resulting aluminum alloy substrate obtained in step S1 in a buffer solution having a pH of about 10 to about 13, to form a corrosion pores on an outer surface of the oxide layer; and S3: injection molding a resin onto the surface of the resulting aluminum alloy substrate obtained in step S2 in a mold to obtain the aluminum alloy-resin composite.

Abstract: A method for integrally molding a metal and a resin and a metal-resin composite structure obtainable by the same are provided. The method comprises forming a nanopore in a surface of a metal sheet; melting a thermoplastic resin on the surface of the metal sheet formed with the nanopore; and injection molding the thermoplastic resin onto the surface of the metal sheet. The thermoplastic resin is a mixture of a main resin and a polyolefin resin, the main resin is a mixture of polyphenylene oxide and a polyamide, and the polyolefin resin has a melting point of about 65° C. to about 105° C.

Abstract: An aluminum alloy, an aluminum alloy resin composite, a method of preparing aluminum alloy, and a method of preparing aluminum alloy-resin composite are provided. The aluminum alloy may comprise: an aluminum alloy substrate; and an oxide layer formed on the surface of the aluminum alloy substrate. The oxide layer comprises an outer surface and an inner surface. The outer surface contains corrosion pores having an average diameter of about 200 nm to about 2000 nm; and the inner surface contains nanopores having an average diameter of about 10 nm to about 100 nm.