Gas Phase And Nongaseous Phase Etching On The Same Substrate Patents (Class 216/57)
  • Patent number: 10937669
    Abstract: A substrate solution-treatment apparatus includes: a substrate holding part for holding a substrate; a nozzle for supplying a treatment solution onto the substrate; a supply line; a flow rate control mechanism including a flow rate meter and a flow rate control valve installed in the supply line; an opening/closing valve installed in the supply line; and a control part for controlling operations of the flow rate control mechanism and the opening/closing valve. The flow rate control mechanism controls the flow rate control valve such that a detection value of the flow rate meter coincides with a flow rate target value provided from the control part. The control part controls the nozzle to supply the treatment solution onto the substrate with the opening/closing valve opened, and provides a first flow rate as the flow rate target value to the flow rate control mechanism.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: March 2, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kosuke Fukuda, Mikio Nakashima, Kazuyoshi Shinohara, Hiroyuki Higashi
  • Patent number: 10867805
    Abstract: An example embodiment of the present disclosure involves a method for semiconductor device fabrication. The method comprises providing a structure that includes a conductive component and an interlayer dielectric (ILD) that includes silicon and surrounds the conductive component, and forming, over the conductive component and the ILD, an etch stop layer (ESL) that includes metal oxide. The ESL includes a first portion in contact with the conductive component and a second portion in contact with the ILD. The method further comprises baking the ESL to transform the metal oxide located in the second portion of the ESL into metal silicon oxide, and selectively etching the ESL so as to remove the first portion of the ESL but not the second portion of the ESL.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Hua Huang, Tzu-Hui Wei, Cherng-Shiaw Tsai
  • Patent number: 10707098
    Abstract: A substrate processing apparatus includes a substrate holding device, a rotation mechanism, a drying liquid supply nozzle, a movement mechanism, a flow rate control mechanism, and a control device including circuitry which controls one or more of the rotation mechanism, movement mechanism and flow rate control mechanism such that the drying liquid forms a drying liquid flow line having distance (L) equal to or less than preset upper limit distance (M), where when a liquid contact point is position at which the drying liquid discharged from the nozzle reaches the substrate, the flow line is formed when the liquid contact point is moved from a center portion of the substrate toward a peripheral edge portion of the substrate, and the distance (L) of the flow line is measured from center of the liquid contact point to an edge of the flow line on a rotation center side of the substrate.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: July 7, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventor: Hiroshi Marumoto
  • Patent number: 10093571
    Abstract: A method of the present invention for producing glass sheets includes the steps of: (I) forming a molten glass raw material into a glass ribbon on a molten metal; and (II) bringing an acid gas that contains a fluorine element (F)-containing acid and in which a volume ratio of water vapor to the acid (a volume of the water vapor/a volume of the acid) is 0 or more and 30 or less, into contact with a surface of the glass ribbon on the molten metal so as to subject the surface of the glass ribbon to dealkalization and control a morphology of the surface in accordance with the volume ratio.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: October 9, 2018
    Assignee: NIPPON SHEET GLASS COMPANY, LIMITED
    Inventors: Satoshi Tanaka, Kiyomi Fukushima, Kazuishi Mitani, Yasuhiro Saito
  • Patent number: 9947547
    Abstract: An environmentally green wet etch process for selective removal of cobalt metal generally includes applying water that is free of added buffers, acids, and/or bases to a substrate including exposed cobalt metal. The process can be utilized to form recesses where desired such as may be implemented for metal contact fill, metal gate fill, interconnect fill, or the like.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: April 17, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Frank W. Mont, Cornelius Brown Peethala, Shariq Siddiqui, Randolph F. Knarr
  • Patent number: 9540736
    Abstract: Provided are methods for etching films comprising transition metals which help to minimize higher etch rates at the grain boundaries of polycrystalline materials. Certain methods pertain to amorphization of the polycrystalline material, other pertain to plasma treatments, and yet other pertain to the use of small doses of halide transfer agents in the etch process.
    Type: Grant
    Filed: July 8, 2015
    Date of Patent: January 10, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Benjamin Schmiege, Nitin K. Ingle, Srinivas D. Nemani, Jeffrey W. Anthis, Xikun Wang, Jie Liu, David Benjaminson
  • Patent number: 9243330
    Abstract: Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that—in use—comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.
    Type: Grant
    Filed: May 20, 2009
    Date of Patent: January 26, 2016
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Ernst H. A. Granneman, Sebastiaan E. van Nooten
  • Patent number: 8999856
    Abstract: A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: April 7, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Jingchun Zhang, Anchuan Wang, Nitin Ingle
  • Patent number: 8999184
    Abstract: A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a treatment gas comprising H2. A plasma is formed from the treatment gas. The patterned via holes are rounded to form patterned rounded via holes by exposing the patterned via holes to the plasma. The flow of the treatment gas is stopped. The plurality of patterned rounded via holes are transferred into the etch layer.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: April 7, 2015
    Assignee: Lam Research Corporation
    Inventors: Ming-Shu Kuo, Siyi Li, Yifeng Zhou, Ratndeep Srivastava, Tae Won Kim, Gowri Kamarthy
  • Patent number: 8992791
    Abstract: A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer.
    Type: Grant
    Filed: September 30, 2009
    Date of Patent: March 31, 2015
    Assignee: Sumco Techxiv Corporation
    Inventors: Kazuaki Kozasa, Tomonori Kawasaki, Takahisa Sugiman, Hironori Nishimura
  • Patent number: 8975185
    Abstract: During formation of a charge trap separation in a semiconductor device, a polymer deposition is formed in a reactor using a first chemistry. In a following step, a second chemistry can be used to etch the polymer deposition in the reactor. The same or similar second chemistry can be used in a second etching step to expose a first oxide layer in each of the cells of the semiconductor device and to form a flat upper surface. This additional etch step can also be performed by the reactor, thereby reducing the number of machines required in the formation process.
    Type: Grant
    Filed: November 26, 2012
    Date of Patent: March 10, 2015
    Assignee: Spansion, LLC
    Inventor: Angela Tai Hui
  • Publication number: 20150027982
    Abstract: A method of forming an imaging blanket for a printing apparatus comprises preparing a support structure (e.g., mold) for receipt of a polymer blanket compound, introducing the polymer blanket compound in liquid state over the support structure, curing the polymer blanket compound to produce an imaging blanket, releasing the imaging blanket from the support structure, and etching a surface of the imaging blanket to form a texture pattern therein, the surface forming an imaging surface of said imaging blanket. An imaging surface providing desirable dampening fluid retention is provided. Wet etch, dry etch or a combination of both may be used. The polymer may be a silicone compound, may include 3 percent by weight granular material.
    Type: Application
    Filed: July 29, 2013
    Publication date: January 29, 2015
    Applicants: Xerox Corporation, Palo Alto Research Center Incorporated
    Inventors: Timothy D. Stowe, Sourobh Raychaudhuri, Carolyn P. Moorlag, Michael Y. Young
  • Patent number: 8894868
    Abstract: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: November 25, 2014
    Assignee: Electro Scientific Industries, Inc.
    Inventors: Andy Hooper, Daragh Finn, Tim Webb, Lynn Sheehan, Kenneth Pettigrew, Yu Chong Tai
  • Patent number: 8889562
    Abstract: Disclosed is an improved double patterning method for forming openings (e.g., vias or trenches) or mesas on a substrate. This method avoids the wafer topography effects seen in prior art double patterning techniques by ensuring that the substrate itself is only subjected to a single etch process. Specifically, in the method, a first mask layer is formed on the substrate and processed such that it has a doped region and multiple undoped regions within the doped region. Then, either the undoped regions or the doped region can be selectively removed in order to form a mask pattern above the substrate. Once the mask pattern is formed, an etch process can be performed to transfer the mask pattern into the substrate. Depending upon whether the undoped regions are removed or the doped region is removed, the mask pattern will form openings (e.g., vias or trenches) or mesas, respectively, on the substrate.
    Type: Grant
    Filed: July 23, 2012
    Date of Patent: November 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Ying Zhang
  • Patent number: 8877075
    Abstract: In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a plurality of protrusions. The method further includes removing the plurality of protrusions by exposing the layer to a fluid that has gas bubbles and a liquid.
    Type: Grant
    Filed: February 1, 2012
    Date of Patent: November 4, 2014
    Assignee: Infineon Technologies AG
    Inventor: Johann Kosub
  • Patent number: 8871120
    Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.
    Type: Grant
    Filed: October 4, 2013
    Date of Patent: October 28, 2014
    Assignee: Micron Technology, Inc.
    Inventor: Nishant Sinha
  • Patent number: 8821741
    Abstract: A preprocess step for supplying an inert gas into an enclosed space in which a substrate is disposed, while exhausting gas by sucking out of the enclosed space. And then, an etching step for supplying a process vapor into the enclosed space while exhausting gas out of the enclosed space at an rate lower than a rate in the preprocess step. And then a post-process step for supplying an inert gas into the enclosed space while exhausting gas by sucking out of the enclosed space at a rate higher than the rate in the etching step.
    Type: Grant
    Filed: November 28, 2012
    Date of Patent: September 2, 2014
    Assignee: Dainippon Screen Mfg. Co., Ltd.
    Inventors: Takashi Ota, Akio Hashizume, Takahiro Yamaguchi, Yuya Akanishi
  • Publication number: 20140243224
    Abstract: Provided is an array including a solid support having a surface, the surface having a plurality of wells, the wells containing a gel material, the wells being separated from each other by interstitial regions on the surface, the interstitial regions segregating the gel material in each of the wells from the gel material in other wells of the plurality; and a library of target nucleic acids in the gel material, wherein the gel material in each of the wells comprises a single species of the target nucleic acids of the library. Methods for making and using the array are also provided.
    Type: Application
    Filed: March 6, 2013
    Publication date: August 28, 2014
    Applicant: ILLUMINA, INC.
    Inventors: Steven M. Barnard, M. Shane Bowen, Maria Candelaria Rogert Bacigalupo, Wayne N. George, Andrew A. Brown, James Tsay
  • Patent number: 8809194
    Abstract: A method for performing a spacer etch process is described. The method includes conformally applying a spacer material over a gate structure on a substrate, and performing a spacer etch process sequence to partially remove the spacer material from the gate structure and the substrate, while retaining a sidewall spacer positioned along a sidewall of the gate structure. The spacer etch process sequence may include depositing a SiOCl-containing layer on an exposed surface of the spacer material to form a spacer protection layer.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: August 19, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Alok Ranjan, Kaushik Arun Kumar
  • Patent number: 8741160
    Abstract: Disclosed are a method for manufacturing a solar cell by processing a surface of a silicon substrate for a solar cell, a solar cell manufactured by the method, and a substrate processing system for performing the method. The method for manufacturing a solar cell comprises protrusion forming step including wet-etching process and for forming a plurality of minute protrusions on a light receiving surface of a crystalline silicon substrate, and planarization step of planarizing the bottom surface, the opposite surface to the light receiving surface of the substrate during or after the protrusion forming step.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: June 3, 2014
    Assignee: Wonik IPS Co., Ltd.
    Inventor: Byung-Jun Kim
  • Patent number: 8734662
    Abstract: A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: May 27, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Rung Hsu, Sung Hsun Wu, Kuo Bin Huang
  • Patent number: 8721901
    Abstract: Embodiments disclosed include methods of processing substrates, including methods of forming conductive connections to substrates. In one embodiment, a method of processing a substrate includes forming a material to be etched over a first material of a substrate. The material to be etched and the first material are of different compositions. The material to be etched is etched in a dry etch chamber to expose the first material. After the etching, the first material is contacted with a non-oxygen-containing gas in situ within the dry etch chamber effective to form a second material physically contacting onto the first material. The second material comprises a component of the first material and a component of the gas. In one embodiment, the first material is contacted with a gas that may or may not include oxygen in situ within the dry etch chamber effective to form a conductive second material.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: May 13, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Nishant Sinha, Gurtej S. Sandhu
  • Patent number: 8722540
    Abstract: A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not covered by the wafer is removed, while the portion of the adhesive covered by the wafer is not removed.
    Type: Grant
    Filed: July 22, 2010
    Date of Patent: May 13, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Liang Lin, Weng-Jin Wu, Jing-Cheng Lin
  • Patent number: 8685855
    Abstract: A tray for film formation by a CVD method includes a tray main body (2) and a supporting member (3) mounted on the tray main body (2) for supporting a silicon wafer (5). The supporting member (3) has a holding portion (3c), on which the silicon wafer (5) is directly placed. The holding portion (3c) has its lower surface (3d) apart from a surface (2a) of the tray main body that is opposed to and apart from the supported silicon wafer (5), whereby the thickness distribution of an oxide film formed on the silicon wafer can be made uniform. The tray has a structure for reducing a contact area between the supporting member (3) and the tray main body (2), with the holding portion (3c) having a tilted surface with its inner circumferential side closer to the tray main body surface (2a) that is opposed to the silicon wafer.
    Type: Grant
    Filed: November 29, 2010
    Date of Patent: April 1, 2014
    Assignee: Sumco Corporation
    Inventors: Takashi Nakayama, Tomoyuki Kabasawa, Takayuki Kihara
  • Publication number: 20140083210
    Abstract: A device for measuring force components formed from a single crystal material, wherein the device comprises at least one cantilever beam inclined to a wafer plane normal and formed in one piece with a mass body, which mass body provides a mass of inertia. The mass body has a first and a second major surface which are substantially parallel with a wafer plane. A mass body cross section presents a portion which is substantially symmetrical along a centrally (in the thickness direction) located plane parallel with the wafer plane. Disclosed is also a method for its production and an accelerometer comprising at least one such device. The device allow for a more compact 3-axis accelerometer.
    Type: Application
    Filed: September 24, 2013
    Publication date: March 27, 2014
    Applicant: ACREO SWEDISH ICT AB
    Inventors: Gert ANDERSSON, Milena ANGUELOVA, Nils HEDENSTIERNA, Alexandra NAFARI, David WESTBERG
  • Patent number: 8663488
    Abstract: A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere generated by vaporizing the liquid to said substrate. And the apparatus includes a plurality of process units, and the same process is applied to the substrate in each said process units.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: March 4, 2014
    Assignee: Gold Charm Limited
    Inventor: Shusaku Kido
  • Publication number: 20140017447
    Abstract: An identification mark formation method for forming an identification mark on a refractory material single crystal substrate that is made of one selected from the group consisting of sapphire, gallium nitride, aluminum nitride, diamond, boron nitride, zinc oxide, gallium oxide, and titanium dioxide is disclosed. The method includes: (a) scanning a principal surface of the refractory material single crystal substrate with a laser beam at a first energy density such that a groove is formed in the principal surface of the refractory material single crystal substrate, thereby forming an identification mark in the principal surface of the refractory material single crystal substrate; and (b) scanning an inside of the groove of the refractory material single crystal substrate with a laser beam at a second energy density that is lower than the first energy density.
    Type: Application
    Filed: July 9, 2013
    Publication date: January 16, 2014
    Inventor: Sadahiko KONDO
  • Publication number: 20130344280
    Abstract: A device including a protecting material encapsulated metallic beam and a method of encapsulating the metallic beam using the protecting material layer are presented. The device includes a cantilever beam that includes at least about 90 Wt % of a metallic beam material, and 10 Wt % or less of a protecting material. The method of forming an encapsulated metallic beam includes the steps of depositing a first layer of protecting material over a substrate, depositing a second layer of protecting material over the first layer, depositing a metallic beam material over the second layer of protecting material, and encapsulating the beam material with a coating of the protecting material.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 26, 2013
    Applicant: GENERAL ELECTRIC COMPANY
    Inventor: Oliver Charles Boomhower
  • Patent number: 8613863
    Abstract: A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum or tungsten layer on a TiN layer on an HfO2 or ZrO2 layer on a silicon substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a first wet etch using a mixture of NH4OH and H2O2 to selectively etch the TiN layer, and a second wet etch using a dilute mixture of HF and HCl to selectively etch the HfO2 or ZrO2 layer.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: December 24, 2013
    Assignee: Intermolecular, Inc.
    Inventors: Jinhong Tong, Frederick Fulgenico, ShouQian Shao
  • Patent number: 8580158
    Abstract: Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX3 and PQ3, where X and Q are halides. Some embodiments include methods of selectively etching undoped silicon dioxide relative to doped silicon dioxide, in which thallium is incorporated into the doped silicon dioxide prior to the etching. Some embodiments include compositions of matter containing silicon dioxide doped with thallium to a concentration of from about 1 weight % to about 10 weight %.
    Type: Grant
    Filed: June 22, 2012
    Date of Patent: November 12, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Nishant Sinha
  • Patent number: 8530356
    Abstract: A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.
    Type: Grant
    Filed: October 7, 2011
    Date of Patent: September 10, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Roman Gouk, Steven Verhaverbeke, Han-Wen Chen
  • Patent number: 8524093
    Abstract: A method for forming a deep trench includes providing a substrate with a bottom layer and a top layer; performing a first etching process to etch the top layer, the bottom layer and the substrate so as to form a recess; selectively depositing a liner covering the top layer, the bottom layer and part of the substrate in the recess; using the liner as an etching mask to perform a second dry etching to etch the recess unmasked by the liner so as to form a deep trench; performing a selective wet etching to remove the top layer; and performing a post wet etching to enlarge the deep trench.
    Type: Grant
    Filed: December 11, 2007
    Date of Patent: September 3, 2013
    Assignee: Nanya Technology Corp.
    Inventor: Chung-Chiang Min
  • Publication number: 20130196289
    Abstract: Two-part implant for attachment of artificial teeth comprising a base body having a bone contact surface and a soft tissue contact surface. Said soft tissue contact surface is at least partially hydroxylated or silanated which results in an improved soft tissue integration.
    Type: Application
    Filed: January 31, 2013
    Publication date: August 1, 2013
    Applicant: Straumann Holding AG
    Inventors: Frank Schwarz, Jurgen Becker, Marco Wieland, Michel Dard
  • Patent number: 8486289
    Abstract: A method of fabricating a c-aperture or E-antenna plasmonic near field source for thermal assisted recording applications in hard disk drives is disclosed. A c-aperture or E-antenna is built for recording head applications. The technique employs e-beam lithography, partial reactive ion etching and metal refill to build the c-apertures. This process strategy has the advantage over other techniques in the self-alignment of the c-aperture notch to the c-aperture internal diameter, the small number of process steps required, and the precise and consistent shape of the c-aperture notch itself.
    Type: Grant
    Filed: November 29, 2011
    Date of Patent: July 16, 2013
    Assignee: HGST Netherlands B.V.
    Inventors: Hamid Balamane, Thomas Dudley Boone, Jordan Asher Katine, Barry Cushing Stipe
  • Patent number: 8454844
    Abstract: A method for processing a wafer to form a plurality of hollow microneedles projecting from a substrate includes forming, by use of a dry etching process, a number of groups of recessed features, each including at least one slot deployed to form an open shape having an included area and at least one hole located within the included area. The internal surfaces of the holes and the slots are then coated with a protective layer. An anisotropic wet etching process is then performed in such a manner as to remove material from outside the included areas while leaving a projecting feature within each of the included areas. The protective layer is then removed to reveal the microneedles.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: June 4, 2013
    Assignee: NanoPass Technologies Ltd.
    Inventors: Yehoshua Yeshurun, Mier Hefetz, Meint De Boer, Erwin J W Berenschot, Hans Gardeniers
  • Publication number: 20130089701
    Abstract: A method of forming an aperture (e.g., a through via, a blind via, a trench, an alignment feature, etc.) within a substrate includes irradiating a substrate with a laser beam to form a laser-machined feature having a sidewall. The laser-machined feature is then processed to change at least one characteristic (e.g., the sidewall surface roughness, diameter, taper, aspect ratio, cross-sectional profile, etc.) of the laser-machined feature. The laser-machined feature can be processed to form the aperture by performing an isotropic wet-etch process employing an etchant solution containing HNO3, HF and, optionally acetic acid.
    Type: Application
    Filed: October 6, 2011
    Publication date: April 11, 2013
    Applicant: ELECTRO SCIENTIFIC INDUSTRIES, INC.
    Inventors: Andy Hooper, Daragh Finn, Tim Webb, Lynn Sheehan, Kenneth Pettigrew, Yu Chong Tai
  • Patent number: 8414708
    Abstract: Provided is a method and apparatus for cleaning a photomask. The photomask including a first region and a second region surrounding the first region, a pattern to be protected disposed on the first region, and a material to be removed exists on the second region. A cleaning liquid is sprayed from an inside region of the second region toward an outer region of the second region to remove the material, and a gas is blown from the first region toward the second region to protect the pattern.
    Type: Grant
    Filed: July 29, 2010
    Date of Patent: April 9, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yun-song Jeong, Hyung-ho Ko, Sung-jae Han, Kyung-noh Kim, Chan-uk Jeon
  • Patent number: 8394280
    Abstract: Methods of patterning a material are disclosed. A first resist pattern is formed on a field. A protective layer is formed over the first resist pattern and at least a portion of the field. A second resist pattern is formed over a portion of the protective layer. A portion of a material to be patterned deposited adjacent to the first and second resist patterns is removed.
    Type: Grant
    Filed: November 6, 2009
    Date of Patent: March 12, 2013
    Assignee: Western Digital (Fremont), LLC
    Inventors: Dujiang Wan, Hai Sun, Hongping Yuan, Ling Wang, Xianzhong Zeng
  • Patent number: 8377322
    Abstract: To provide a pattern forming method including: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned; pressing the side of the mold structure, where the concave portions are provided, against the object so as to encapsulate the active species supply source in the concave portions; and oxidatively decomposing parts of the object which are in positions corresponding to the concave portions, by irradiating the active species supply source with excitation light through one of the mold structure and the object.
    Type: Grant
    Filed: June 16, 2009
    Date of Patent: February 19, 2013
    Assignee: Fujifilm Corporation
    Inventor: Satoshi Wakamatsu
  • Patent number: 8377321
    Abstract: A method of forming a nozzle and an ink chamber of an ink jet device, includes forming a nozzle passage by subjecting a substrate to a directional first etch process from one side of the substrate; applying a second etch process from the same side of the substrate for widening an internal part of the nozzle passage, to form a cavity forming at least a portion of the ink chamber adjacent to the nozzle; and controlling the shape of the cavity by providing, on the opposite side of the substrate, an etch accelerating layer buried under an etch stop layer and by allowing the second etch process to proceed into the etch accelerating layer. The following steps precede the first etch process: forming an annular trench in the substrate on the side of the substrate where the nozzle is to be formed; and passivating the walls of the trench so as to become resistant against the second etch process. The material surrounded by the trench is removed in the first etch process.
    Type: Grant
    Filed: December 2, 2010
    Date of Patent: February 19, 2013
    Assignee: Oce Technologies B.V.
    Inventors: Henricus Johannes Adrianus Van De Sande, Willem Maurits Hijmans, Gerardus Johannes Burger, Dionysius Antionius Petrus Oudejans
  • Patent number: 8366947
    Abstract: In a method for transferring nanostructures into a substrate, the following order of steps is used: decorating a substrate with nanomaterials (13), etching the substrate (10), applying a coating (15), removing the nanomaterials (13), and etching the substrate (10).
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: February 5, 2013
    Assignee: NMI Naturwissenschaftliches und Medizinisches Institut an der Universitaet Tuebingen
    Inventor: Claus Burkhardt
  • Patent number: 8361338
    Abstract: The embodiments of methods described in this disclosure for removing a hard mask layer(s) over a polysilicon layer of a gate stack after the gate stack is etched allows the complete removal of the hard mask layer without the assistance of photolithography. A dielectric material is deposited over the substrate with the gate stacks. The topography of the substrate is removed by chemical mechanical polishing first. Afterwards, an etching gas (or vapor) is used to etch a portion of the remaining dielectric layer and the hard mask layer. The etching gas forms an etch byproduct that deposits on the substrate surface and can be subsequently removed by heating. The etching and heating to remove etch byproduct are repeated until the hard mask layer is completed removed. Afterwards, the remaining dielectric layer is removed by wet etch. The methods described are simpler and cheaper to use than conventional methods for hard mask removal.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: January 29, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Shiang-Bau Wang
  • Patent number: 8361332
    Abstract: A method of fabricating micro-lenses is provided. A first layer is formed on a substrate. The first layer is comprised of a first material and the substrate is comprised of a second material. An opening is formed in the first layer and an etchant is provided in the opening to etch both the substrate and the first layer to form a first mold for a first micro-lens. The etchant etches the first layer at a different rate than the substrate. A lens material is added to the etched molds to form micro-lenses.
    Type: Grant
    Filed: July 13, 2009
    Date of Patent: January 29, 2013
    Assignee: Micron Technology, Inc.
    Inventor: Jin Li
  • Publication number: 20130020284
    Abstract: Nozzle arms for holding discharge heads are caused by a pivotal driving part to move between a processing position above a substrate and a standby position outside a processing cup surrounding a substrate. When the nozzle arms having cleaned a substrate is placed at the standby position, a cleaning solution is ejected from a shower nozzle toward the nozzle arms arranged obliquely downward of the shower nozzle. The three nozzle arms are caused to move up and down such that the nozzle arms cut across a jet of a cleaning solution discharged obliquely downward, thereby cleaning the three nozzle arms in order. Then, a nitrogen gas is ejected from a drying gas nozzle and sprayed on the nozzle arms to remove the cleaning solution attached to the nozzle arms, thereby drying the nozzle arms.
    Type: Application
    Filed: July 2, 2012
    Publication date: January 24, 2013
    Inventors: Naoyuki OSADA, Kentaro SUGIMOTO
  • Patent number: 8343367
    Abstract: Disclosed is a method of forming a continuous channel for gas discharge in the surface of a casting roll for twin roll strip casting, and particularly, a method of forming a continuous channel for gas discharge on the surface of a casting roll for twin roll strip casting, suitable for the formation of dimples on the surface of a casting roll for a twin roll strip caster, which includes applying a photoresist on the entire surface of a casting roll, conducting patterning on the applied photoresist, developing the surface of the casting roll, subjected to the patterning, and etching the metal surface of the casting roll, exposed in the developing, and which prevents the generation of dents, enables the manufacture of a cast product having no defects, and realizes wide applicability not only to high Mn steel but also to types of casting steel capable of generating dents or similar defects due to a large amount of volatile gas.
    Type: Grant
    Filed: July 26, 2007
    Date of Patent: January 1, 2013
    Assignee: POSCO
    Inventors: Ju-Tae Choi, Man-Jin Ha, Hee-Kyung Moon
  • Patent number: 8343370
    Abstract: A method of fabricating a PTFE seal element and rotary shaft seal assembly therewith. The method includes providing a PTFE seal element and a vacuum chamber having electrodes therein. Next, placing the PTFE seal element on one electrode and drawing a vacuum pressure in the chamber and introducing a first process gas into the chamber. Further, applying a high frequency signal to the electrodes and producing a discharge plasma and etching and chemically modifying a surface of the PTFE seal element with the discharge plasma. Then, purging the vacuum chamber with a second process gas and restoring the vacuum chamber to an atmospheric pressure. Thereafter, rinsing the seal element and applying an adhesion promoter to the etched and chemically modified surface. Lastly, attaching the etched and chemically modified surface of the PTFE seal element to the carrier by molding an elastomeric material between the seal element and the carrier.
    Type: Grant
    Filed: February 19, 2009
    Date of Patent: January 1, 2013
    Assignee: Federal-Mogul Corporation
    Inventors: Richard E. Dewald, Bhawani S. Tripathy
  • Publication number: 20120325776
    Abstract: The apparatus for processing a substrate includes a substrate carrier for carrying a substrate, a chemical-applying unit for applying chemical to the substrate, and a gas-applying unit for applying gas atmosphere to the substrate.
    Type: Application
    Filed: September 5, 2012
    Publication date: December 27, 2012
    Applicant: NEC LCD TECHNOLOGIES, LTD.
    Inventor: Shusaku KIDO
  • Patent number: 8329590
    Abstract: Apparatus and methods for shielding a feature projecting from a first area on a substrate to a plasma while simultaneously removing extraneous material from a different area on the substrate with the plasma. The apparatus includes at least one concavity positioned and dimensioned to receive the feature such that the feature is shielded from the plasma. The apparatus further includes a window through which the plasma removes the extraneous material. The method generally includes removing the extraneous material while shielding the feature against plasma exposure.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: December 11, 2012
    Assignee: Nordson Corporation
    Inventors: Robert S. Condrashoff, James D. Getty, James S. Tyler
  • Patent number: 8318034
    Abstract: In a surface processing method for processing a surface of a member made of silicon carbide (SiC) and having a fragmental layer on a surface thereof, the surface of the member having the fragmental layer is modified into a dense layer to reduce the number of particles generated from the surface of the member when the member is applied to a plasma processing apparatus. Here, the SiC of the surface of the member is recrystallized by heating the fragmental layer.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: November 27, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Naoyuki Satoh, Nobuyuki Nagayama, Keiichi Nagakubo
  • Patent number: 8308967
    Abstract: The present invention relates to an insulator as an insulating layer in a laminate which can inhibit dusting at the time of use, more particularly an electronic circuit component to which the insulator has been applied, particularly a wireless suspension. The insulator comprises a laminate of one or more insulation unit layers etchable by a wet process, the insulator having been subjected to plasma treatment after wet etching. The insulator exists mainly as an insulating layer in a laminate having a layer construction of first inorganic material layer-insulating layer-second inorganic material layer or a layer construction of inorganic material layer-insulating layer, and at least a part of the inorganic material layer has been removed to expose the insulating layer.
    Type: Grant
    Filed: January 13, 2011
    Date of Patent: November 13, 2012
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Katsuya Sakayori, Terutoshi Momose, Shigeki Kawano, Tomoko Togashi, Hiroko Amasaki, Nobuhiro Sakihama, Tsuyoshi Yamazaki, Michiaki Uchiyama, Hiroshi Yagi