Irradiating, Ion Implanting, Alloying, Diffusing, Or Chemically Reacting The Substrate Prior To Ethching To Change Properties Of Substrate Toward The Etchant Patents (Class 216/87)
  • Patent number: 10586700
    Abstract: A semiconductor structure includes a plurality of semiconductor fins on an upper surface of a semiconductor substrate. The semiconductor fins spaced apart from one another by a respective trench to define a fin pitch. A multi-layer electrical isolation region is contained in each trench. The multi-layer electrical isolation region includes an oxide layer and a protective layer. The oxide layer includes a first material on an upper surface of the semiconductor substrate. The protective layer includes a second material on an upper surface of the oxide layer. The second material is different than the first material. The first material has a first etch resistance and the second material has a second etch resistance that is greater than the first etch resistance.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: March 10, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Michael P. Belyansky, Richard A. Conti, Dechao Guo, Devendra K. Sadana, Jay W. Strane
  • Patent number: 10539876
    Abstract: Provided is a method for forming a hole pattern in a resist film. The method includes forming a resist film on a workpiece; exposing the resist film using a bright field mask; removing an unexposed portion of the resist film by supplying a first developer to the resist film and performing a negative development after the exposing the resist film; modifying a sidewall portion of the resist film after the removing the unexposed portion of the resist film; and removing an exposed portion of the resist film by supplying a second developer to the resist film and performing a positive development after the modifying the sidewall portion of the resist film. The modifying the sidewall portion of the resist film is a processing of reducing solubility of the sidewall portion of the resist film in the second developer.
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: January 21, 2020
    Assignee: Tokyo Electron Limited
    Inventor: Hidetami Yaegashi
  • Patent number: 10289250
    Abstract: A touchscreen system comprises a touch area. At least one transmitter is positioned proximate to outer edges of the touch area for transmitting first beams in a first direction. At least one beam splitter is positioned proximate to the outer edges of the touch area for splitting the first beams into at least second and third beams that travel through the touch area in at least second and third directions, respectively. The at least one beam splitter comprises a plurality of deflecting elements. Receivers are positioned proximate to the outer edges of the touch area for receiving the at least second and third beams.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: May 14, 2019
    Assignee: Elo Touch Solutions, Inc.
    Inventors: Joel C. Kent, James L. Aroyan, Ting Gao, Daniel H. Scharff
  • Patent number: 10216230
    Abstract: A window substrate includes a glass substrate including first and second surfaces opposite to each other, the glass substrate having a thickness of about 25 ?m to about 100 ?m, and a coating layer disposed on the first surface. The glass substrate includes SiO2, Al2O3 and Na2O, and the mole ratio of Al2O3/Na2O is equal to or smaller than 1.
    Type: Grant
    Filed: June 16, 2017
    Date of Patent: February 26, 2019
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Myung Hwan Kim, Ik Hyung Park, Seong Jin Hwang, Sung Chul Kim, Jang Doo Lee, Jong Hyuk Lee
  • Patent number: 10002792
    Abstract: A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
    Type: Grant
    Filed: June 15, 2017
    Date of Patent: June 19, 2018
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Huiming Bu, Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie
  • Patent number: 9935003
    Abstract: A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
    Type: Grant
    Filed: February 7, 2017
    Date of Patent: April 3, 2018
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Huiming Bu, Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie
  • Patent number: 9929057
    Abstract: A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
    Type: Grant
    Filed: November 3, 2016
    Date of Patent: March 27, 2018
    Assignees: International Business Machines Corporation, GlobalFoundries, Inc.
    Inventors: Huiming Bu, Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie
  • Patent number: 9618844
    Abstract: Described is a reagent that enhances acid generation of a photoacid generator and a composition containing such reagent.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: April 11, 2017
    Assignees: Toyo Gosei Co., Ltd., Osaka University
    Inventor: Satoshi Enomoto
  • Patent number: 9570291
    Abstract: Semiconductor substrates and methods for processing semiconductor substrates are provided. A method for processing a semiconductor substrate includes providing a semiconductor substrate having an outer edge, a central region, and a peripheral region between the outer edge and the central region. The semiconductor substrate also has an upper surface. The method includes forming an amorphous material over the upper surface of the semiconductor substrate in the peripheral region. Also, the method includes irradiating the upper surface of the semiconductor substrate, wherein the amorphous material inhibits cracking at the outer edge of the semiconductor substrate.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: February 14, 2017
    Assignee: GLOBALFOUNDRIES, INC.
    Inventors: Shishir Ray, Sandeep Gaan, Sheldon Meyers, Nisha Pillai, Edmund Kenneth Banghart, Kyle Jung
  • Patent number: 9558995
    Abstract: A method for filling gaps between structures includes forming a plurality of high aspect ratio structures adjacent to one another with gaps, forming a first dielectric layer on tops of the structures and conformally depositing a spacer dielectric layer over the structures. The spacer dielectric layer is removed from horizontal surfaces and a protection layer is conformally deposited over the structures. The gaps are filled with a flowable dielectric, which is recessed to a height along sidewalls of the structures by a selective etch process such that the protection layer protects the spacer dielectric layer on sidewalls of the structures. The first dielectric layer and the spacer dielectric layer are exposed above the height using a higher etch resistance than the protection layer to maintain dimensions of the spacer layer dielectric through the etching processes. The gaps are filled by a high density plasma fill.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: January 31, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, GLOBALFOUNDRIES INC.
    Inventors: Huiming Bu, Andrew M. Greene, Balasubramanian Pranatharthiharan, Ruilong Xie
  • Patent number: 9440876
    Abstract: An electron definable glass or an electron sensitive glass for microstructures is provided with microstructures and optical waveguides formed therein. The microstructures are formed by electron beam irradiation in selected areas in the electron definable glass followed by a high temperature heat treatment and chemical etching, whereas the optical waveguides are formed by irradiating the electron definable glass by an electron beam followed by a low temperature heat treatment.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: September 13, 2016
    Inventors: Lu Han, Andy Shih, Yi-Chi Shih, Ishiang Shih, Cindy X. Qiu
  • Patent number: 9299613
    Abstract: A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), and a first cut point (FCP) of the surface, each of the points being spaced apart from one another by one or more distances. The FCP corresponds to a cut line of the substrate. The FOP and the SOP are respectively disposed at lateral sides of the FCP. The FIP is disposed between the FCP and the FOP. The SIP is disposed between the FCP and the SOP. The same kind and intensity of laser is radiated towards each of the points.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: March 29, 2016
    Assignees: Samsung Display Co., Ltd., Philoptics Co., Ltd.
    Inventors: Il Young Jeong, Tae Yong Kim, Cheol Lae Roh, Je Kil Ryu, Jeong Hun Woo, Gyoo Wan Han, Ki Su Han, Tae Hyoung Cho, Jong Nam Moon
  • Patent number: 9123506
    Abstract: Beam-induced etching uses a work piece maintained at a temperature near the boiling point of a precursor material, but the temperature is sufficiently high to desorb reaction byproducts. In one embodiment, NF3 is used as a precursor gas for electron-beam induced etching of silicon at a temperature below room temperature.
    Type: Grant
    Filed: June 10, 2013
    Date of Patent: September 1, 2015
    Assignee: FEI COMPANY
    Inventors: Aiden Martin, Milos Toth
  • Patent number: 9118001
    Abstract: In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned feature as an etched structure comprising one or more layers disposed on a substrate and generally parallel to a plane of the substrate defined by a front surface of the substrate. The sidewall layer comprises material from the one or more etched layers. The method further includes arranging the substrate proximate a sheath modifier that is adjacent a plasma, and providing ions in an ion dose to the substrate by extracting the ions from the plasma through the sheath modifier, the ions impinging upon the substrate at an angle with respect to a perpendicular to the plane of the substrate.
    Type: Grant
    Filed: July 2, 2013
    Date of Patent: August 25, 2015
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Daniel Distaso, John J. Hautala, Christopher Campbell
  • Publication number: 20150122777
    Abstract: A conductive pattern is formed using a reactive polymer comprising pendant tertiary alkyl ester groups, a compound that provides an acid upon exposure to radiation, and a crosslinking agent. A polymeric layer is patternwise exposed to form first exposed regions with a polymer comprising carboxylic acid groups that are contacted with electroless seed metal ions, and then contacted with a halide to form corresponding electroless seed metal halide. Another exposure converts electroless seed metal halide to electroless seed metal nuclei and forms second exposed regions. A reducing agent is used to develop the electroless seed metal nuclei in the second exposed regions, or to develop the electroless seed metal halide in the first exposed regions. Fixing is used to remove any remaining electroless seed metal halide. The electroless seed metal nuclei are then electrolessly plated in various exposed regions.
    Type: Application
    Filed: November 5, 2013
    Publication date: May 7, 2015
    Inventors: Mark Edward Irving, Thomas B. Brust
  • Publication number: 20150122778
    Abstract: A conductive pattern is formed in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to radiation to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. This pattern of electroless seed metal ions can be contacted with a non-reducing reagent that reacts with the electroless seed metal ions to form an electroless seed metal compound that has a pKsp of less than 40. This bound electroless seed metal compound is then electrolessly plated with a suitable conductive metal.
    Type: Application
    Filed: November 5, 2013
    Publication date: May 7, 2015
    Inventors: Mark Edward Irving, Thomas B. Brust
  • Patent number: 8993451
    Abstract: Etch stabilizing ions (37) are introduced, e.g., by ion implantation (34), into a portion (36) of a substrate (20) underlying an etch window (24) in a masking layer (22) covering the substrate (20), where a trench (26) is desired to be formed. When the portion (36) of the substrate (20) containing the etch stabilizing ions (37) is etched to form the trench (26), the etch stabilizing ions (37) are progressively released at the etch interface (28?) as etching proceeds, substantially preventing gas micro-bubbles or other reaction products at the etch interface (28?) from disrupting etching. Using this method (700), products containing trenches (26) are much more easily formed and such trenches (26) have much smoother interior surface (28).
    Type: Grant
    Filed: April 15, 2011
    Date of Patent: March 31, 2015
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Srivatsa G. Kundalgurki, James F. McHugh
  • Patent number: 8986844
    Abstract: A method for manufacturing a touch screen panel includes reinforcing a glass substrate, the glass substrate to be formed with a plurality of touch screen panels in unit cells, reinforcing the glass substrate including forming a reinforcing layer on an upper and a lower side of the glass substrate by performing a reinforcement treatment on a whole surface of the glass substrate, cutting the reinforced glass substrate in each unit cell, removing a part of the reinforcing layer formed in the upper and the lower side of the glass substrate adjacent to a cut cross section, performing a chemical HF treatment on a cross section of the glass substrate corresponding to the cut cross section and exposing the glass substrate by partially removing the reinforcing layer, and forming a touch screen panel per region of the unit cells, respectively.
    Type: Grant
    Filed: January 4, 2011
    Date of Patent: March 24, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Byeong-Kyu Jeon, Sung-Ku Kang
  • Patent number: 8961806
    Abstract: In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: February 24, 2015
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Shimoi, Hiroyuki Kyushima, Keisuke Araki
  • Publication number: 20150036346
    Abstract: The present invention concerns a method for manufacturing a resonator in a substrate characterized in that it includes the following steps: a) modifying the structure of at least one region of the substrate in order to make said at least one region more selective; b) etching said at least one region in order to selectively manufacture said resonator.
    Type: Application
    Filed: December 20, 2012
    Publication date: February 5, 2015
    Applicant: The Swatch Group Research and Development Ltd
    Inventors: Thierry Hessler, Silvio Dalla Piazza
  • Patent number: 8945416
    Abstract: A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: February 3, 2015
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Shimoi, Keisuke Araki
  • Publication number: 20150021293
    Abstract: A method for providing a nanopattern of periodically ordered metal oxide nanostructures on a substrate is described. The method comprises the steps of providing a microphase separated block copolymer as a thin film on a substrate, the block copolymer comprising a first polymer having an affinity for a cations of the metal and a second polymer having a lower affinity for the cations than the first polymer, and selectively incorporating a salt of the metal cation into the first polymer of the block copolymer by means of a solvation process prior to or after formation of the microphase separated block copolymer. The block copolymer film is then treated to oxidise the metal ion salt and remove the polymers leaving a nanopattern of metal oxide nanostructures on the substrate.
    Type: Application
    Filed: November 16, 2012
    Publication date: January 22, 2015
    Inventors: Michael Morris, Dipu Borah, Tandra Ghoshal, Parvaneh Mokarian
  • Publication number: 20150003215
    Abstract: A method for manufacturing a component in a substrate including: a) modifying a structure of at least one region of the substrate to make the at least one region more selective; and b) chemically etching the at least one region to selectively manufacture the component.
    Type: Application
    Filed: December 20, 2012
    Publication date: January 1, 2015
    Applicant: The Swatch Group Research and Development Ltd.
    Inventors: Thierry Hessler, Nicolas Rebeaud, Jean-Luc Helfer, David Richard, Sebastien Graf
  • Publication number: 20140343687
    Abstract: An implant includes a microstructured hyperhydrophilic surface with protrusions and depressions in which a spacing between the protrusions as a statistical mean is in a range of 1 to 100 ?m and a profile height of the protrusions and depressions as a statistical mean is in the range of 1 to 80 ?m.
    Type: Application
    Filed: December 16, 2012
    Publication date: November 20, 2014
    Inventor: Herbert Jennissen
  • Patent number: 8889562
    Abstract: Disclosed is an improved double patterning method for forming openings (e.g., vias or trenches) or mesas on a substrate. This method avoids the wafer topography effects seen in prior art double patterning techniques by ensuring that the substrate itself is only subjected to a single etch process. Specifically, in the method, a first mask layer is formed on the substrate and processed such that it has a doped region and multiple undoped regions within the doped region. Then, either the undoped regions or the doped region can be selectively removed in order to form a mask pattern above the substrate. Once the mask pattern is formed, an etch process can be performed to transfer the mask pattern into the substrate. Depending upon whether the undoped regions are removed or the doped region is removed, the mask pattern will form openings (e.g., vias or trenches) or mesas, respectively, on the substrate.
    Type: Grant
    Filed: July 23, 2012
    Date of Patent: November 18, 2014
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Ying Zhang
  • Publication number: 20140326702
    Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.
    Type: Application
    Filed: July 15, 2014
    Publication date: November 6, 2014
    Applicants: FUJIKURA LTD., THE UNIVERSITY OF TOKYO
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO, Kazuhito TABATA, Masakazu SUGIYAMA
  • Patent number: 8877082
    Abstract: Disclosed is a processing method which can achieve a high processing rate, and is capable of making a surface smooth. In order to achieve this an SiC substrate is arranged in a potassium hydroxide solution containing hydrogen peroxide, and ultraviolent radiation is irradiated on the surface of the SiC substrate. An SiO2 layer is formed on the surface of the SiC substrate due to the irradiation of ultraviolet radiation, and this SiO2 layer is chemically removed by means of the potassium hydroxide solution, and also removed by a synthetic quartz surface plate.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: November 4, 2014
    Assignee: National University Corporation Kumamoto University
    Inventors: Akihisa Kubota, Mutsumi Touge
  • Patent number: 8871109
    Abstract: A donor wafer, for example of silicon, has an irregular surface following cleaving of a lamina from the surface, for example by exfoliation following implant of hydrogen and/or helium ions to define a cleave plane. Pinholes in the lamina leave column asperities at the exfoliated surface of the donor wafer, and the beveled edge may leave an edge asperity which fails to exfoliate. To prepare the surface of the donor wafer for reuse, mechanical grinding removes the column and edge asperities, and minimal additional thickness. Following cleaning, growth and removal of an oxide layer at the surface rounds remaining peaks. The smoothed surface is well adapted to bonding to a receiver element and exfoliation of a new lamina. A variety of devices may be fabricated from the lamina, for example a photovoltaic cell.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: October 28, 2014
    Assignee: GTAT Corporation
    Inventors: Gopal Prabhu, Kathy J. Jackson, Orion Leland, Aditya Agarwal
  • Patent number: 8858818
    Abstract: The effects of knock-on oxide in a semiconductor substrate are reduced by providing a semiconductor substrate and forming a thin layer of native oxide on the semiconductor substrate. Ion implantation is performed through the native oxide layer. The native oxide layer reduces the phenomenon of knock-on oxide and oxygen concentration within the semiconductor substrate. Further reduction may be achieved by etching the surface of the semiconductor substrate in order to eliminate a concentration of oxygen at a surface of the semiconductor substrate.
    Type: Grant
    Filed: September 30, 2010
    Date of Patent: October 14, 2014
    Assignee: SuVolta, Inc.
    Inventors: Pushkar Ranade, Toshifumi Mori, Ken-ichi Okabe, Toshiki Miyake
  • Patent number: 8846536
    Abstract: Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: September 30, 2014
    Assignee: Novellus Systems, Inc.
    Inventors: Nerissa Draeger, Karena Shannon, Bart van Schravendijk, Kaihan Ashtiani
  • Patent number: 8828260
    Abstract: A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and produce a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of 45° or greater therebetween, and the modified spots are made align in one row along the line.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: September 9, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Shimoi, Keisuke Araki
  • Publication number: 20140217066
    Abstract: A silicon substrate processing method includes forming an etching mask which has an opening portion, on a surface of a silicon substrate, forming an etching guide hole in the opening portion on the silicon substrate, and forming a through-hole which passes through the silicon substrate, by applying an etching treatment onto the silicon substrate in which the etching guide hole is formed. In the forming of the guide hole, the etching guide hole passing through the silicon substrate is formed by irradiating the opening portion with a laser beam a plurality of times, with a cooling period between each instance of irradiation with the laser beam.
    Type: Application
    Filed: February 6, 2014
    Publication date: August 7, 2014
    Applicant: SEIKO EPSON CORPORATION
    Inventor: Kazuhiro GOMI
  • Patent number: 8790533
    Abstract: Disclosed is a method of etching semiconductor nanocrystals, which includes dissolving semiconductor nanocrystals in a halogenated solvent containing phosphine so that anisotropic etching of the surface of semiconductor nanocrystals is induced or adding a primary amine to a halogenated solvent containing phosphine and photoexciting semiconductor nanocrystals thus inducing isotropic etching of the surface of the nanocrystals, thereby reproducibly controlling properties of semiconductor nanocrystals including absorption wavelength, emission wavelength, emission intensity, average size, size distribution, shape, and surface state.
    Type: Grant
    Filed: December 28, 2010
    Date of Patent: July 29, 2014
    Assignee: Postech Academy-Industry Foundation
    Inventors: Seung Koo Shin, Won Jung Kim, Sung Jun Lim
  • Patent number: 8741777
    Abstract: A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and construct a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of less than 45° therebetween, and the modified spots are made align in a plurality of rows along the line.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: June 3, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Shimoi, Keisuke Araki
  • Patent number: 8734662
    Abstract: A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: May 27, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Rung Hsu, Sung Hsun Wu, Kuo Bin Huang
  • Patent number: 8685269
    Abstract: A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging the laser light at the object so as to form the modified region along a part corresponding to the through hole in the object; an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object after the laser light converging step; and an etching step of etching the object so as to advance the etching selectively along the modified region and form the through hole after the etch resist film producing step; while the laser light converging step exposes the modified region to the outer surface of the object.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: April 1, 2014
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Shimoi, Keisuke Araki
  • Patent number: 8685261
    Abstract: Provided are methods of manufacturing a surface light source device, the methods include forming a first structure that includes a first substrate and a plurality of glass beads each partially embedded in the first substrate. A second structure is formed that includes a second substrate and an adhesive material layer formed on the second substrate. The first structure and the second structure are adhered to each other in such a way that the glass beads are each partially embedded into the adhesive material layer.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: April 1, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-sun Choi, Hong-seok Lee, Myoung-seong Kim
  • Patent number: 8679361
    Abstract: The invention relates to a method and device for characterizing wafers during the production of solar cells. Characterizing wafers includes a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with the wafer during the production process, wherein the wet chemical step decreases an influence of the wafer surface on a lifetime of charge carriers in the wafer; c) irradiating the wafer with light for creating the charge carriers in the wafer during the wet chemical step or after the wet chemical step; d) determining the lifetime of the charge carriers created in step c); and e) characterizing the wafer by means of the lifetime determined in step d).
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: March 25, 2014
    Assignee: Q-Cells SE
    Inventors: Jörg Müller, Jörg Isenberg, Jörn Suthues, Martin Bivour, Jean Patrice Rakotoniaina
  • Patent number: 8654446
    Abstract: An optical element or module is designed to be placed in front of an optical sensor of a semiconductor component. At least one optically useful part of the element or module is provided through which the image to be captured is designed to pass. A method for obtaining such an optical element or module includes forming at least one through passage between a front and rear faces of the element or module. The front and rear faces are covered with a mask. Ion doping is introduced through the passage. As a result, the element or module has a refractive index that varies starting from a wall of the through passage and into the optically useful part. An image capture apparatus includes an optical imaging module having at least one such element or module.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: February 18, 2014
    Assignee: STMicroelectronics S.A.
    Inventors: Emmanuelle Vigier-Blanc, Guillaume Cassar
  • Patent number: 8648316
    Abstract: The invention relates to a cooling apparatus (101) for a sample in an ion beam etching process, including, a sample stage (102) for arranging the sample, a coolant receptacle (120) containing a coolant, at least one thermal conduction element (106a, 106b) that connects the sample stage (102) to the coolant, a cooling finger (105) connected to the thermal conduction element (106a, 106b), the cooling finger (105) comprising a conduit (130, 131) through which coolant can flow and which is connectable to the coolant receptacle (120). The invention further relates to a method of adjusting the temperature of a sample in an ion beam etching process, including mounting a sample on a coolable sample stage (102), aligning the sample on the sample stage (102), and cooling the sample by coolant directed through a conduit (130, 131) of a cooling finger.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: February 11, 2014
    Assignee: Leica Mikrosysteme GmbH
    Inventors: Thomas Pfeifer, Rainer Wogritsch
  • Patent number: 8637409
    Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.
    Type: Grant
    Filed: February 17, 2012
    Date of Patent: January 28, 2014
    Assignee: Fujitsu Limited
    Inventors: Shirou Ozaki, Masayuki Takeda
  • Patent number: 8603920
    Abstract: A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.
    Type: Grant
    Filed: August 5, 2010
    Date of Patent: December 10, 2013
    Assignee: DENSO CORPORATION
    Inventors: Katsuhiko Kanamori, Masashi Totokawa, Hiroshi Tanaka
  • Patent number: 8591753
    Abstract: A laser processing method of converging a laser light into an object to be processed made of glass so as to form a modified region and etching the object along the modified region so as to form a through hole in the object comprises a browning step of discoloring at least a part of the object by browning; a laser light converging step of forming the modified region in the discolored part of the object by converging the laser light into the object after the browning step; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
    Type: Grant
    Filed: July 19, 2011
    Date of Patent: November 26, 2013
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Hideki Shimoi, Keisuke Araki
  • Publication number: 20130309445
    Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.
    Type: Application
    Filed: July 26, 2013
    Publication date: November 21, 2013
    Applicants: The University Of Tokyo, Fujikura Ltd.
    Inventors: Osamu NUKAGA, Satoshi YAMAMOTO, Kazuhito TABATA, Masakazu SUGIYAMA
  • Patent number: 8563335
    Abstract: A method of controlling a polishing operation includes polishing a substrate, during polishing obtaining a sequence over time of measured spectra from the substrate with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra applying a Fourier transform to the measured spectrum to generate a transformed spectrum thus generating a sequence of transformed spectra, for each transformed spectrum identifying a peak of interest from a plurality of peaks in the transformed spectrum, for each transformed spectrum determining a position value for the peak of interest in the transformed spectrum thus generating a sequence of position values, and determining at least one of a polishing endpoint or an adjustment of a pressure to the substrate from the sequence of position values.
    Type: Grant
    Filed: April 23, 2012
    Date of Patent: October 22, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Dominic J. Benvegnu, Boguslaw A. Swedek
  • Patent number: 8557612
    Abstract: A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.
    Type: Grant
    Filed: June 25, 2010
    Date of Patent: October 15, 2013
    Assignee: California Institute of Technology
    Inventors: Michael David Henry, Michael Shearn, Axel Scherer
  • Patent number: 8557613
    Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.
    Type: Grant
    Filed: June 13, 2011
    Date of Patent: October 15, 2013
    Assignee: California Institute of Technology
    Inventors: Michael Shearn, Michael David Henry, Axel Scherer
  • Patent number: 8529782
    Abstract: A microstructure manufacturing method includes (a) generating first light including an interference fringe by crossing two laser beams, (b) forming a denatured region and a non-denatured region on an object having thermal non-linearity by applying the first light onto the object, so that the denatured region and the non-denatured region are disposed so as to correspond to a period of the interference fringe of the first light, and (c) etching the object so that the denatured region or the non-denatured region is selectively eliminated.
    Type: Grant
    Filed: February 19, 2008
    Date of Patent: September 10, 2013
    Assignee: Seiko Epson Corporation
    Inventor: Jun Amako
  • Patent number: 8506833
    Abstract: A method for producing a molded body, said method comprising: providing a film comprising a thermoplastic plastic and having a film thickness D ranging from 1 ?m to 1000 ?m; irradiating the film with ionizing radiation, to produce irradiated regions in the film; thermally reshaping the film into a molded body and generating at least one hollow structure, wherein a temperature of the thermal reshaping remains below the melting temperature for the thermoplastic plastic; removing the irradiated regions, to create pores having a diameter ? from about 10 nm to about 10 ?m in the molded body; and removing the molded body from a mold.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: August 13, 2013
    Assignee: Karlsruhe Institute of Technology
    Inventors: Stefan Giselbrecht, Roman Truckenmüller, Christina Trautmann
  • Patent number: 8460569
    Abstract: A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.
    Type: Grant
    Filed: April 7, 2011
    Date of Patent: June 11, 2013
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Ludovic Godet, Christopher R. Hatem, Patrick M. Martin, Timothy J. Miller