Abstract: The invention relates to a method and device for characterizing wafers during the production of solar cells. Characterizing wafers includes a) providing a wafer and carrying out a production process with the wafer for producing a solar cell or a plurality of solar cells; b) carrying out a wet chemical step with the wafer during the production process, wherein the wet chemical step decreases an influence of the wafer surface on a lifetime of charge carriers in the wafer; c) irradiating the wafer with light for creating the charge carriers in the wafer during the wet chemical step or after the wet chemical step; d) determining the lifetime of the charge carriers created in step c); and e) characterizing the wafer by means of the lifetime determined in step d).

Abstract: An optical element or module is designed to be placed in front of an optical sensor of a semiconductor component. At least one optically useful part of the element or module is provided through which the image to be captured is designed to pass. A method for obtaining such an optical element or module includes forming at least one through passage between a front and rear faces of the element or module. The front and rear faces are covered with a mask. Ion doping is introduced through the passage. As a result, the element or module has a refractive index that varies starting from a wall of the through passage and into the optically useful part. An image capture apparatus includes an optical imaging module having at least one such element or module.

Abstract: The invention relates to a cooling apparatus (101) for a sample in an ion beam etching process, including, a sample stage (102) for arranging the sample, a coolant receptacle (120) containing a coolant, at least one thermal conduction element (106a, 106b) that connects the sample stage (102) to the coolant, a cooling finger (105) connected to the thermal conduction element (106a, 106b), the cooling finger (105) comprising a conduit (130, 131) through which coolant can flow and which is connectable to the coolant receptacle (120). The invention further relates to a method of adjusting the temperature of a sample in an ion beam etching process, including mounting a sample on a coolable sample stage (102), aligning the sample on the sample stage (102), and cooling the sample by coolant directed through a conduit (130, 131) of a cooling finger.

Abstract: An etching method includes: applying a radiation to an etching aqueous solution; and etching a material to be etched by using the etching aqueous solution irradiated with the radiation.

Abstract: A manufacturing method of a semiconductor device includes: irradiating a laser beam on a single crystal silicon substrate, and scanning the laser beam on the substrate so that a portion of the substrate is poly crystallized, wherein at least a part of a poly crystallized portion of the substrate is exposed on a surface of the substrate; and etching the poly crystallized portion of the substrate with an etchant. In this case, a process time is improved.

Abstract: A laser processing method of converging a laser light into an object to be processed made of glass so as to form a modified region and etching the object along the modified region so as to form a through hole in the object comprises a browning step of discoloring at least a part of the object by browning; a laser light converging step of forming the modified region in the discolored part of the object by converging the laser light into the object after the browning step; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.

Abstract: A method of manufacturing a base body having a microscopic hole, includes: forming at least one of a first modified region and a second modified region by scanning inside of a base body with a focal point of a first laser light having a pulse duration on order of picoseconds or less; forming a periodic modified group formed of a plurality of third modified regions and fourth modified regions by scanning an inside of the base body with a focal point of a second laser light having a pulse duration on order of picoseconds or less; obtaining the base body which is formed so that the first modified region and the second modified region overlap or come into contact with the modified group; and forming a microscopic hole by removing the first modified region and the third modified regions by etching.

Abstract: A method of controlling a polishing operation includes polishing a substrate, during polishing obtaining a sequence over time of measured spectra from the substrate with an in-situ optical monitoring system, for each measured spectrum from the sequence of measured spectra applying a Fourier transform to the measured spectrum to generate a transformed spectrum thus generating a sequence of transformed spectra, for each transformed spectrum identifying a peak of interest from a plurality of peaks in the transformed spectrum, for each transformed spectrum determining a position value for the peak of interest in the transformed spectrum thus generating a sequence of position values, and determining at least one of a polishing endpoint or an adjustment of a pressure to the substrate from the sequence of position values.

Abstract: A method for designing, fabricating, and predicting a desired structure in and/or on a host material through defining etch masks and etching the host material is provided. The desired structure can be micro- or nanoscale structures, such as suspended nanowires and corresponding supporting pillars, and can be defined one layer at a time. Arbitrary desired structures can also be defined and obtained through etching. Further, given the desired structure, a starting structure can be predicted where etching of the starting structure yields the desired structure.

Abstract: A method to determine minimum etch mask dosage or thickness as a function of etch depth or maximum etch depth as a function of etch mask implantation dosage or thickness, for fabricating structures in or on a substrate through etch masking via addition or removal of a masking material and subsequent etching.

Abstract: A microstructure manufacturing method includes (a) generating first light including an interference fringe by crossing two laser beams, (b) forming a denatured region and a non-denatured region on an object having thermal non-linearity by applying the first light onto the object, so that the denatured region and the non-denatured region are disposed so as to correspond to a period of the interference fringe of the first light, and (c) etching the object so that the denatured region or the non-denatured region is selectively eliminated.

Abstract: A method for producing a molded body, said method comprising: providing a film comprising a thermoplastic plastic and having a film thickness D ranging from 1 ?m to 1000 ?m; irradiating the film with ionizing radiation, to produce irradiated regions in the film; thermally reshaping the film into a molded body and generating at least one hollow structure, wherein a temperature of the thermal reshaping remains below the melting temperature for the thermoplastic plastic; removing the irradiated regions, to create pores having a diameter ? from about 10 nm to about 10 ?m in the molded body; and removing the molded body from a mold.

Abstract: A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set of patterned features to a dose of ions incident on the substrate over multiple angles, and selectively etching exposed portions of the patterned features.

Abstract: N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.

Abstract: A method is provided for forming an opening in a layer of a selected material. The method comprises, forming a polymer resist layer over said selected material and plasticising areas of the resist where openings are to be formed. The plasticising is performed by depositing a first solution onto the surface of said polymer resist layer, where the first solution is a plasticiser selected to increase permeability of the polymer resist layer to a second solution, in an area which has absorbed the first solution. The second solution is selected to be an etchant or solvent for the selected material. After the resist layer has been selectively plasticised, it is contacted with the second solution, which permeates the polymer resist layer in the area of increased permeability and forms an opening in the selected material.

Abstract: Described herein are polishing apparatus, polishing formulations, and polymeric substrates for use in polishing surfaces, and related methods. The apparatus, formulations, substrates, and methods may each be used in applications involving the polishing of metal and/or metal-containing surfaces such as semiconductor wafers. The apparatus, formulations, polymeric substrates, and related methods described herein may be used without abrasives, and in some instances, without mechanical friction of a pad surface against the surface to be polished. Therefore, defects on a polished surface due to such mechanical polishing processes may be reduced.

Abstract: To provide a pattern forming method including: providing an active species supply source to at least one of a mold structure having a plurality of concave portions in its surface, and an object to be patterned; pressing the side of the mold structure, where the concave portions are provided, against the object so as to encapsulate the active species supply source in the concave portions; and oxidatively decomposing parts of the object which are in positions corresponding to the concave portions, by irradiating the active species supply source with excitation light through one of the mold structure and the object.

Abstract: According to the present invention, during the photolithography processing of a substrate, exposure processing is performed immediately after removal of a coating film on the rear surface of the substrate, and a coating film is formed on the rear surface of the substrate immediately after the exposure processing. Thereafter, etching treatment and so on are performed, and a series of these treatment and processing steps are performed a predetermined number of times. The coating film has been formed on the rear surface of the substrate at the time for the etching treatment, so that even if the coating film gets minute scratches, the rear surface of the substrate itself is protected by the coating film and thus never scratched. Further, since the coating film on the rear surface of the substrate is removed immediately before the exposure processing, the rear surface of the substrate can be flat for the exposure processing.

Abstract: A method of forming a microstructure includes a Step (A) of forming a modified region in a substrate by irradiating a laser beam having a pulse duration on the order of picoseconds or shorter on a region where a pore-like microstructure is to be provided, and scanning a focal point at which the laser beam is converged; and a Step (B) of forming a microstructure by performing an etching process on the substrate in which the modified region has been formed, and removing the modified region, where a linear polarized laser beam is used as the laser beam in the Step (A), and the laser beam is irradiated so that an orientation of a linear polarization has a certain direction with respect to a direction of scanning the focal point.

Abstract: This invention provides an inexpensive and rapid method for fabricating a high-anisotropic-etch ratio, shaped glass structures using a novel photosensitive glass composition. Structures of the photosensitive glass may include micro-channels, micro-optics, microposts, or arrays of hollow micro-needles. Furthermore, such shaped glass structures can be used to form a negative mold for casting the shape in other materials.

Abstract: Methods are provided for laser patterning a partial depth surface portion of a glass body by controlling the amount of stress induced in the glass body. A laser beam is directed along an impinged path on the surface portion of the glass body to heat the glass body to form a swell. The glass body is then cooled and etched. The surface portion of the glass body is heated above the strain point at a heating rate HR to form a swell. The heating rate HR is a function of a target temperature T and an exposure time of the output laser beam. The exposure time is controlled to reach a target temperature above the softening point of the glass body and does not require a power density that would lead to laser ablation of the surface portion. The surface portion is cooled below the strain point to induce regions of localized stress. The unablated surface portion is etched while in a state of laser-induced localized stress to form a patterned glass body.

Abstract: A pit is formed from a stack comprising at least one first layer formed by a material able to change physical state and a second layer made of the same material as that forming the first layer, but in a different physical state. An area of the first layer is treated to make said area go from its initial physical state to the physical state corresponding to that of the second layer. A selective etching step is then performed to eliminate said area of the first layer and the area of the second layer initially covered by the treated area of the first layer. Advantageously, said material is a phase transition material.

Abstract: To provide an electron beam assisted EEM method that can realize ultraprecision machining of workpieces, including glass ceramic materials, in which at least two component materials different from each other in machining speed in a machining process are present in a refined mixed state and the surface state is not even, to a surface roughness of 0.2 to 0.05 nm RMS. The EEM method comprises a working process in which a workpiece and chemically reactive fine particles are allowed to flow along the working face to remove atoms on the working face chemically bonded to the fine particles together with the fine particles through chemical interaction between the fine particles and the working face interface. The workpiece comprises at least two component materials present in a refined mixed state and different from each other in machining speed in the machining process.

Abstract: A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired.

Abstract: A semiconductor device is formed by providing a substrate and forming a semiconductor-containing layer atop the substrate. A mask having a plurality of openings is then formed atop the semiconductor-containing layer, wherein adjacent openings of the plurality of openings of the mask are separated by a minimum feature dimension. Thereafter, an angled ion implantation is performed to introduce dopants to a first portion of the semiconductor-containing layer, wherein a remaining portion that is substantially free of dopants is present beneath the mask. The first portion of the semiconductor-containing layer containing the dopants is removed selective to the remaining portion of semiconductor-containing layer that is substantially free of the dopants to provide a pattern of sublithographic dimension, and the pattern is transferred into the substrate to provide a fin structure of sublithographic dimension.

Abstract: A patterning method has a mask layer and undoped patterns sequentially formed on a target layer. A doping process is performed to surfaces of the undoped patterns to form doped patterns from the surfaces of the undoped patterns. A material is filled in the gaps between the doped patterns. A portion of the doped patterns are then removed to expose the top surfaces of the remaining undoped patterns. The material and the exposed undoped patterns are removed. A portion of the mask layer is removed using the remaining doped patterns as a mask to form a first pattern on the mask layer. A portion of the target layer is removed using the mask layer having the first pattern thereon as a mask so as to form on the target layer a second pattern complementary to the first pattern.

Abstract: A method of etching a foil for use in an electrolytic capacitor utilizes a nanoimprinted optic to control the etch pattern. The optic is formed by creating a self-assembled monolayer (SAM) of hemispheres onto the surface of an optical quartz substrate. A laser is directed onto the optic while the foil underlies the optic, and the concentrated light source is used to effectively image an array of submicron spots. The resulting spots allow for controlled initiation of etch tunnels during a subsequent electrochemical etch of the foil, with the purpose of ultimately increasing foil capacitance through the increased surface area.

Abstract: A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an aperture being formed on one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from the aperture on the one surface, from the one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from the one surface through the aperture of the etching mask layer.

Abstract: In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.

Abstract: A method for manufacturing a light-absorbing substrate having a surface with depressions and projections comprises a first step of irradiating a substrate with a laser light so as to form a plurality of modified regions arranged two-dimensionally along a surface of the substrate within the substrate and cause at least one of each modified region and a fracture generated from the modified region to reach the surface of the substrate and a second step of etching the surface of the substrate after the first step so as to form depressions and projections on the surface of the substrate.

Abstract: A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.

Abstract: A method of removing carbon doped silicon oxide between metal contacts is provided. A layer of the carbon doped silicon oxide is converted to a layer of silicon oxide by removing the carbon dopant. The converted layer of silicon oxide is selectively wet etched with respect to the carbon doped silicon oxide and the metal contacts, which forms recess between the metal contacts.

Abstract: A method of manufacturing a silicon substrate for a liquid discharge head with a liquid supply opening formed therein includes: forming one processed portion by laser processing on the substrate from one surface of the substrate; expanding the one processed portion to form a recess portion by performing laser processing at a position which overlaps a part of the one processed portion and does not overlap another part of the one processed portion; and etching from the one surface the substrate with the recess portion formed therein to form the liquid supply opening.

Abstract: By providing an interlayer dielectric material with different removal rates, a desired minimum material height above gate electrode structures of sophisticated transistor devices of the 65 nm technology or 45 nm technology may be obtained. The reduced removal rate above the gate electrode may thus provide enhanced process robustness during the planarization of the interlayer dielectric layer stack prior to the formation of contact elements.

Abstract: Methods for preparing carbon nanotube layers are disclosed herein. Carbon nanotube layers may be films, ribbons, and sheets. The methods comprise preparing an aligned carbon nanotube array and compressing the array with a roller to create a carbon nanotube layer. Another method disclosed herein comprises preparing a carbon nanotube layer from an aligned carbon nanotube array grown on a grouping of lines of metallic catalyst. A composite material comprising at least one carbon nanotube layer and prepared by the process comprising a) compressing an aligned single-wall carbon nanotube array with a roller, and b) transferring the carbon nanotube layer to a polymer is also disclosed.

Abstract: A method of forming an opening through a substrate includes defining an area on a first surface of the substrate where the opening is to be formed, the area having a center region flanked by edge regions. A top layer having a substantially closed space located over the area is formed on the first surface. Structure for promoting etching of the center region is provided, and the first surface of the substrate is etched in the area. In one embodiment, the method can fabricate an inkjet printhead having a substrate having an ink feed hole formed therethrough and an orifice plate formed thereon. A plurality of particle tolerance elements located over a center region of the ink feed hole promoted etching during the fabrication of the printhead.

Abstract: A heat-reactive resist material of the invention is characterized in that the boiling point of the fluoride of the element is 200° C. or more. By this means, it is possible to achieve the heat-reactive resist material having high resistance to dry etching using fluorocarbons to form a pattern with the deep groove depth.

Abstract: Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal. The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (?C/cm2) accumulated on the second surface irradiated with the ion beam satisfies the following relationship: 0.7×Ps?Q?5×Ps where Ps is the spontaneous polarization (?C/cm2) of the ferroelectric single crystal.

Abstract: The present invention provides a method and system for manufacturing a microstructure in a photosensitive glass substrate, which include the steps of generating first femtosecond laser pulses by a femtosecond laser source and focusing the first femtosecond laser pulses on a surface or an interior of the photosensitive glass substrate by a focus lens to define a modified region; generating second femtosecond laser pulses by the femtosecond laser source, adjusting a frequency of the second femtosecond laser pulses to be higher than that of the first femtosecond laser pulses by a frequency adjustment unit and an energy adjustment unit; focusing the adjusted second femtosecond laser pulses on the modified region of the photosensitive glass substrate to crystallize a substance of the modified region; and, after crystallization, etching off the crystallized region to obtain the microstructure in the photosensitive glass substrate.

Abstract: A method of using a chemical compound as an etchant for the removal of unmodified areas of a chalcogenide-based glass, while leaving the imagewise modified areas un-removed, wherein the compound contains a secondary amine, R1 R2 NH, with R1 and/or R2 having a sterically bulky group with more than 5 atoms.

Abstract: A material mixture for dissolving a coating system from a work piece comprises an aqueous, alkaline solution containing between 3 and 8 weight percent KMnO4 and at the same time having an alkaline fraction of between 6 and 15 weight percent. The alkaline fraction is formed in one embodiment by KOH or NaOH, wherein the pH of the solution is above 13. A method according to the present invention uses the above-described material mixture for wet-chemical delaminating of hard material coatings of the group: metallic AlCr, TiAlCr and other AlCr alloys; nitrides, carbides, borides, oxides thereof and combinations thereof.

Abstract: The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon formation and dissolution to create high aspect ratio structures with straight sidewalls for through wafer MEMS processing.

Abstract: A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.

Abstract: A method of manufacturing a perforated porous resin substrate, the method including the following steps: Step 1 of forming at least one perforation penetrating in the thickness direction from a first surface to a second surface in a porous resin substrate made of a resin material containing a fluoropolymer; Step 2 of etching treatment conducted by putting an etchant containing an alkali metal in contact with the wall face of each perforation; and Step 3 of putting an oxidizable compound or a solution thereof in contact with a degenerative layer generated by the etching treatment, and thereby removing the degenerative layer. A method of manufacturing a porous resin substrate in which electrical conductivity is afforded to the wall face of the perforation.

Abstract: One possible embodiment is a method of manufacturing a structure on or in a substrate with the following steps a) positioning at least one spacer structure by a spacer technique on the substrate, b) using at least one of the groups of the spacer structure and a structure generated by the spacer structure as a mask for a subsequent particle irradiation step for generating a latent image in the substrate c) using the latent image for further processing the substrate.

Abstract: A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Abstract: The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non-volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate.

Abstract: A substrate treatment method which includes a developing step of developing a resist film on a substrate to form a resist pattern on the substrate, and thereafter includes an etching step of etching a base film using the resist pattern as a mask. The substrate treatment method, between the developing step and the etching step, supplies a fluorine-based liquid to the resist pattern to form a protection film with a high fluorine density on a surface of the resist pattern.

Abstract: The present invention is directed to processes for ink jet printing of etchant or modifier materials for creating patterns, particularly for electronics and display applications. The present invention also relates to devices made using the processes.

Abstract: The present invention provides a glass for anodic bonding having a low thermal expansion coefficient and capable of being subjected to laser beam micromachining. The present invention is a glass for anodic bonding having a base glass composition containing 1 to 6 mol % of Li2O+Na2O+K2O and having an average linear expansion coefficient of 32×10?7 K?1 to 39×10?7 K?1 in a temperature range of room temperature to 450° C. This glass further contains 0.01 to 5 mol % of a metal oxide as a colorant relative to the base glass composition, and has an absorption coefficient of 0.5 to 50 cm?1 at a particular wavelength within 535 nm or less.