Abstract: A plasma processing apparatus 100 including: a chamber 101 having a dielectric window; a coil 102 placed outside the chamber so as to face the dielectric window; a FS electrode 103 having a plate shape and placed on the chamber side of the coil; a first power source 104 for supplying a high-frequency power of a first frequency to the coil 102; a second power source 105 for supplying a high-frequency power of a second frequency which is different from the first frequency, to the FS electrode 103; a first matcher 106 placed between the first power source and the coil; a second matcher 107 placed between the second power source and the FS electrode; and a first frequency attenuation filter connected between the second matcher and the FS electrode, and configured to allow transmission of the high-frequency power of the second frequency and inhibit transmission of the high-frequency power of the first frequency.

Abstract: Apparatus and method are disclosed for plasma synthesis of graphitic products including graphene. A plasma nozzle is coupled to a reaction chamber. A process gas is supplied to the plasma nozzle, the process gas comprising a carbon-containing species. Radio frequency radiation is supplied to the process gas within the plasma nozzle, so as to produce a plasma within the nozzle in use, and thereby cause cracking of the carbon-containing species. The plasma nozzle is arranged such that an afterglow of the plasma extends into the reaction chamber. The cracked carbon-containing species also passes into the reaction chamber, and the cracked carbon-containing species recombines within the afterglow, so as to form the graphitic products including graphene.

Abstract: A substrate processing apparatus includes: a substrate holding unit configured to hold and rotate a substrate; an etching unit configured to etch a surface of a substrate by discharging a processing liquid to the substrate rotated by the substrate holding unit; and a control unit configured to control an etching amount by the etching unit. In the substrate processing apparatus, the control unit controls an etching amount at each position on the surface of the substrate based on information upon a characteristic of a surface processing to be performed on the substrate by a post-processing apparatus which is configured to perform a post-processing after a substrate processing by the substrate processing apparatus.

Abstract: Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheath(s) proximate to the bias electrodes.

Abstract: The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

Abstract: Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

Abstract: A high frequency generator having dual outputs comprises: a high frequency amplifying unit configured to amplify a DC voltage of a predetermined level, and output a first and a second high frequency amplification signal; a combiner configured to combine the first high frequency amplification signal and the second high frequency amplification signal, and output a high frequency power signal; a high frequency sensor disposed on output side of the combiner, configured to detect an electrical signal flowing the output side of the combiner, and output an electrical detection signal; a controller configured to output multiple control signals by using an externally applied control signal and the electrical detection signal; and a switching unit disposed between the combiner and the plasma chamber, and controlled by a switching control signal outputted from the controller to output the high frequency power signal to a first high frequency power output signal through a first output terminal and to output the high freq

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

Abstract: A plasma deposition system comprising a wafer platform, a second electrode, a first electrode, a first high voltage pulser, and a second high voltage pulser. In some embodiments, the second electrode may be disposed proximate with the wafer platform. In some embodiments, the second electrode can include a disc shape with a central aperture; a central axis, an aperture diameter, and an outer diameter. In some embodiments, the first electrode may be disposed proximate with the wafer platform and within the central aperture of the second electrode. In some embodiments, the first electrode can include a disc shape, a central axis, and an outer diameter. In some embodiments, the first high voltage pulser can be electrically coupled with the first electrode. In some embodiments, the second high voltage pulser can be electrically coupled with the second electrode.

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse—bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Abstract: A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

Abstract: Some embodiments include a high voltage pulsing power supply. A high voltage pulsing power supply may include: a high voltage pulser having an output that provides pulses with an amplitude greater than about 1 kV, a pulse width greater than about 1 ?s, and a pulse repetition frequency greater than about 20 kHz; a plasma chamber; and an electrode disposed within the plasma chamber that is electrically coupled with the output of the high voltage pulser to produce a pulsing an electric field within the chamber.

Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

Abstract: A glass substrate for a mask blank includes two main surfaces facing each other and surfaces to be chamfered. The surfaces to be chamfered are provided peripherally around the two main surfaces. A flatness of one of the main surfaces is 100 nm or less. On the surface to be chamfered from which substrate corner parts are excluded, each of the substrate corner part being portions where a distance from an outer end of a two-dimensional projection profile of the one of the main surfaces and the surface to be chamfered is within 10 mm, a waviness measured in a range of 2 mm at an arbitrary part in a direction parallel to one side closest to the surface to be chamfered in the two-dimensional projection profile is 50 nm or less.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Abstract: The invention addresses the problem of providing an edged tool such as a surgical clade or a razor blade that is durable and sharp, and a manufacturing method therefor. The problem is solved by an edged tool manufacturing method provided with a process of treating a metal base material, which has a machined surface obtained by machining, using a plasma generated in an atmosphere filled with a mixed gas having a main gas and a reaction gas as the main components.

Abstract: An atmospheric pressure plasma source includes a body including a distal end, a blade extending from the distal end and terminating at a blade edge, a plasma-generating unit, and a plasma outlet communicating with the plasma-generating unit and positioned at the distal end. The plasma outlet is oriented at a downward angle generally toward the blade edge, wherein the plasma outlet provides a plasma path directed generally toward the blade edge. The plasma may be applied to the coating at an interface between the coating and an underlying substrate. While applying the plasma, the blade is moved into contact with the coating at the interface, wherein the blade assists in separating the coating from the substrate while one or more components of the coating react with energetic species of the plasma.

Abstract: In a method for controlling pulse arc welding where an arc is created between a wire and a base material, a pulse waveform different from the pulse waveform for steady-state welding is outputted when a predetermined time has passed since short-circuit welding control was started at arc start, and after a sufficiently large melt pool is formed, the pulse waveform for the steady-state welding is outputted. This reduces the generation of spatters after an arc is created and until the arc is stabilized.

Abstract: A weld bead shaping apparatus including: a gouging torch for gouging an object to be shaped; a shape sensor for measuring a shape of the object; a slider apparatus and an articulated robot for driving the gouging torch and shape sensor; an image processing apparatus; and a robot controlling apparatus. The image processing apparatus includes: a shape data extracting unit extracting shape data of the object, from a measurement result obtained by the shape sensor; and a weld reinforcement shape extracting/removal depth calculating unit calculating a weld reinforcement shape of the weld bead from a difference between the shape data and a preset designated shape of the object, and calculating a removal depth by which gouging is performed, based on the weld reinforcement shape. The robot controlling apparatus controls the slider apparatus, the articulated robot, and the gouging torch based on the weld reinforcement shape and the removal depth.

Abstract: Disclosed herein are systems, methods and apparatuses for dissociating a non-activated gas through a disc-shaped plasma in a remote plasma source. Two inductive elements, one on either side of the disc-shaped plasma, generate a magnetic field that induces electric fields that sustain the disc-shaped plasma. The inductive elements can be coiled conductors having any number of loops and can be arranged in planar or vertical coils or a combination of planar and vertical coils. Additionally, the ratio of inductive element radius to gap distance between the two inductive elements can be configured to achieve a desired vertical plasma confinement.

Abstract: The invention relates to a method and a device for the plasma treatment of metal substrates or insulating substrates (3) running substantially continuously through a vacuum chamber having a treatment zone (2), the plasma being sustained by radiofrequency inductive coupling in the treatment zone (2) by means of an inductor (4) connected to a radiofrequency generator, in which the inductor (4) is protected from any contamination by the material emitted by the surface of the substrates (3) by means of a Faraday cage (7), which is positioned between the plasma and the inductor (4), and in which the Faraday cage (7) is on average electrically biassed positively with respect to the substrates (3) or with respect to a counter-electrode present in the plasma.

Abstract: Techniques for removing material from a substrate are provided. A laser beam is focused at a distance from the surface to be treated. A gas is provided at the focus point. The gas is dissociated using the laser energy to generate gas plasma. The substrate is then brought in contact with the gas plasma to enable material removal.

Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Abstract: A microwave plasma processing device includes a fixing device for fixing a substrate as a processing target on a central axis in a plasma processing chamber, a exhausting device for depressurizing an inside and outside of the substrate, a metal processing gas supply member which is present in the substrate and forms a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to perform processing. A microwave sealing member is provided at a substrate-holding portion of the fixing device, and a connection position of the microwave introducing device is located at a node of an electric field intensity distribution formed on the processing gas supply member by introducing the microwave.

Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Abstract: A triaxial rod assembly for providing both RF power and DC voltage to a chuck assembly that supports a workpiece in a processing chamber during a manufacturing operation. In embodiments, a rod assembly includes a center conductor to be coupled to a chuck electrode for providing DC voltage to clamp a workpiece. Concentrically surrounding the center conductor is an annular RF transmission line to be coupled to an RF powered base to provide RF power to the chuck assembly. An insulator is disposed between the center conductor and RF transmission line. Concentrically surrounding the RF transmission line is a ground plane conductor coupled to a grounded base of the chuck to provide a reference voltage relative to the DC voltage. An insulator is disposed between the RF transmission line and the ground plane conductor.

Abstract: A method of purifying a target powder having an oxygen content, the method comprising: flowing hydrogen gas through a microwave production chamber; applying microwaves to the hydrogen gas as the hydrogen gas flows through the microwave production chamber, thereby forming hydrogen radicals from the hydrogen gas; flowing the hydrogen radicals out of the microwave production chamber to the target powder disposed outside of the microwave production chamber; and applying the hydrogen radicals to the target powder, thereby removing a portion of the oxygen content from the powder. Preferably, the target powder is agitated as the hydrogen radicals are being applied.

Abstract: A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.

Abstract: The invention discloses a method and a production installation for producing a sub-assembly consisting of a plurality of parts joined together, in which the first part (1) and second part (2) are removed from a parts delivery site in the vicinity of a transport device and deposited oriented in position on one of a plurality of parts transport carriers of the transport device, and subsequently together with the parts transport carrier transported to an assembly station. The parts transport carrier is stopped in the assembly station in a holding position, whereupon the parts (1, 2), oriented towards one another, are moved by means of a vertical positioning device (200a, 200b) together from a transport position on the parts transport carrier into a preparation position, then positioned relative to one another, clamped and then joined to form a sub-assembly, whereupon the joined subassembly is again deposited on one of a plurality of parts transport carriers and transported away thereby.

Abstract: A method for bonding a plastic member onto a metal housing is provided. A metal housing having an inner surface and an outer surface is prepared. A hollow-carved area is provided on the metal housing. The inner surface of the metal housing is subjected to physical process, thereby forming a bonding area. An adhesive layer is formed on the bonding area. A plastic mold member is formed on the adhesive layer by performing a first plastic injection molding. An optical plastic member is molded on the hollow-carved area by performing a second plastic injection molding.

Abstract: In a method and device for automated welding using a positioning device, in particular a welding robot, a welding pose is occupied by the positioning device in a regulated manner, and the welding pose is flexibly held during the closing of an electrode holder, during the welding process and/or during the opening of the electrode holder.

Abstract: Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Abstract: A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas to the vacuum processing chamber; a high frequency power supply unit for supplying a high frequency power to the lower electrode; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In a method for performing a plasma etching on a substrate by using the plasma etching apparatus, a plasma is generated in the vacuum processing chamber to perform the plasma etching on the substrate by using the plasma after the focus ring is heated by supplying a high frequency power from the high frequency power supply unit to the lower electrode under a condition that no plasma is generated.

Abstract: In a plasma processing apparatus, a first electrode is attached to a grounded evacuable processing chamber via an insulating material or a space and a second electrode disposed in parallel with the first electrode spaced apart therefrom in the processing chamber, the second electrode supporting a target substrate to face the first electrode. A first radio frequency power supply unit applies a first radio frequency power of a first frequency to the second electrode, and a second radio frequency power supply unit applies a second radio frequency power of a second frequency lower than the first frequency to the second electrode. Further, a processing gas supply unit supplies a processing gas to a processing space formed by the first and the second electrode and a sidewall of the processing chamber. Moreover, an inductor electrically is connected between the first electrode and a ground potential.

Abstract: An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode.

Abstract: Embodiments of the invention include a load lock chamber having a decoupled slit valve door seal compartment. In one embodiment, a load lock chamber includes a main assembly, a first slit valve door seal compartment and a seal assembly. The main assembly has a substrate transfer cavity formed therein. Two substrate access ports are formed through the main assembly and fluidly couple to the cavity. The first slit valve door seal compartment has an aperture disposed adjacent to and aligned with one of the access ports. The first slit valve door seal compartment is decoupled from the main assembly. The seal assembly couples the first slit valve door seal compartment to the main assembly.

Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Abstract: A method of stably controlling the temperature of a sample placed on a sample stage to a desired temperature by estimating a sample temperature accurately, the sample stage including a refrigerant flow path to cool the sample stage, a heater to heat the sample stage, and a temperature sensor to measure the temperature of the sample stage. This method comprises the steps of: measuring in advance the variation-with-time of supply electric power to the heater, temperature of the sample, and temperature of the temperature sensor, without plasma processing; approximating the relation among the measured values using a simultaneous linear differential equation; estimating a sample temperature from the variation-with-time of sensor temperature y1, heater electric power u1, and plasma heat input by means of the Luenberger's states observer based on the simultaneous linear differential equation used for the approximation; and performing a feedback control of sample temperature using the estimated sample temperature.

Abstract: A microwave resonance plasma generating apparatus, a plasma processing system having the same and a method of generating a microwave resonance plasma are provided. The apparatus includes a microwave generating unit which generates a microwave, and a plasma producing unit which produces electrons and photons of high energy using the microwave generated from the microwave generating unit. The plasma producing unit includes a coaxial waveguide having an inner electrode disposed adjacent to the microwave generating unit, an outer electrode connected to the microwave generating unit and disposed to coaxially surround a portion of the inner electrode, the outer electrode being shorter than the inner electrode, and a dielectric tube disposed between the inner electrode and the outer electrode to insulate between the inner electrode and the outer electrode. The coaxial waveguide utilizes a principle of “cut or truncated electrode of coaxial waveguide” and a resonance phenomenon of Langmiur.

Abstract: An electrode for a contact start plasma arc torch includes an elongated electrode body formed of an electrically conductive material that defines a longitudinal axis and a distal end for housing an emissive element. The electrode includes a second end positioned adjacent the electrode body. The second end defines an extensive portion having a first length along a first direction and a second length along a second direction. The second length is greater than the first length. A component for use with the electrode includes a hollow body element having an interior surface with one or more of a contour, step, or flange that defines a shaped opening capable of slideably receiving a complementary-shaped portion of an electrode body.

Abstract: A plasma processing apparatus performs a specific plasma processing on a target substrate by disposing a first and a second electrode to face each other in a processing chamber, and supplying high-frequency electric power to at least one of the first and the second electrodes to thereby generate a plasma while introducing a processing gas onto the target substrate supported by the second electrode. The electrode for use as the first electrode includes: an electrode plate facing the second electrode; a support for supporting the electrode plate, wherein the support is in contact with a surface of the electrode plate and the surface is opposite to the second electrode; and a dielectric portion, provided on a contact surface of the support with the electrode plate, and having a shape in which a center portion thereof has a height different from that of an edge portion thereof.

Abstract: A method of fabricating yttria parts is provided herein. In one embodiment, the method includes sintering a yttria sample, machining the sintered sample to form a part, and annealing the part in a three-stage process that includes heating the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate.

Abstract: A plasma processing chamber, which includes an upper electrode assembly, a lower electrode assembly, and a plasma confinement assembly. The upper electrode assembly includes an upper electrode, a backing member, the backing member attachable to an upper surface of the upper electrode, and a guard ring surrounding an outer surface of the backing member and located above the upper surface of the upper electrode, wherein the guard ring is configured to provide an inner gap between the outer surface of the backing member and an inner periphery of the guard ring. The lower electrode assembly is adapted to receive a semiconductor substrate. The plasma confinement assembly is separated from an outer periphery of the upper electrode and the backing member by the guard ring.

Abstract: Substrates with a coating, in particular a metal-containing coating, are freed of coating in some regions, in particular in the edge region, with the aid of plasma directed onto the coated side of the substrate. The width of the region in which the coating is removed may be set such that plasma from a number of plasma heads arranged next to one another in a row or from one plasma head with variable cross section is directed onto the substrate in the desired width from which the coating is to be removed, wherein the plasma head or heads is/are suitably aligned with respect to the substrate and/or the required number of plasma heads in each case are set in operation. It is also possible to remove coatings only partially in terms of the layer thickness.

Abstract: Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

Abstract: In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies.

Abstract: A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal.