Methods Patents (Class 219/121.41)
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Patent number: 6924455Abstract: A material processing apparatus having an integrated toroidal plasma source is described. The material processing apparatus includes a plasma chamber that comprises a portion of an outer surface of a process chamber. A transformer having a magnetic core surrounds a portion of the plasma chamber. The transformer has a primary winding. A solid state AC switching power supply comprising one or more switching semiconductor devices is coupled to a voltage supply and has an output that is coupled to the primary winding. The solid state AC switching power supply drives an AC current in the primary winding that induces an AC potential inside the chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and dissociates the gas.Type: GrantFiled: January 26, 2001Date of Patent: August 2, 2005Assignee: Applied Science & Technology, Inc.Inventors: Xing Chen, Donald K. Smith, William M. Holber
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Patent number: 6919525Abstract: An article comprises a heat source, a heat sink, and a high-efficiency diamond material interposed between and thermally coupled to the heat source and the heat sink. The heat source and the high-efficiency diamond material have a contact area greater than 1 square centimeter.Type: GrantFiled: December 27, 2001Date of Patent: July 19, 2005Assignee: P1 Diamond, Inc.Inventor: John M. Pinneo
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Patent number: 6914208Abstract: A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.Type: GrantFiled: November 12, 2003Date of Patent: July 5, 2005Assignee: ASM Japan K.K.Inventors: Akira Shimizu, Kunitoshi Nanba
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Patent number: 6894298Abstract: The invention is directed to a method and an arrangement for generating extreme ultraviolet (EUV) radiation, i.e., radiation of high-energy photons in the wavelength range from 11 to 14 nm, based on a gas discharge. The object of the invention, to find a novel possibility for generating EUV radiation in which an extended life of the system is achieved with stable generation of a dense, hot plasma column, is met according to the invention in that a preionization discharge is ignited between two parallel disk-shaped flat electrodes prior to the main discharge by a surface discharge along the superficies surface of a cylindrical insulator with a plasma column generated through the gas discharge with pulsed direct voltage, which preionization discharge carries out an ionization of the working gas in the discharge chamber by means of fast charged particles.Type: GrantFiled: October 9, 2002Date of Patent: May 17, 2005Assignee: Xtreme technologies GmbHInventors: Imtiaz Ahmad, Guido Schriever, Juergen Kleinschmidt
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Patent number: 6891123Abstract: Method and an apparatus for igniting plasma in a semiconductor manufacturing apparatus are disclosed. An example plasma ignition method and apparatus sets a predetermined pressure, source power and bias power of a chamber and flows a predetermined flow rate of CHF3 and Ar gases into the chamber, introduces a predetermined flow rate of Cl2 gas into the chamber, completes the supply of Cl2 gas, and ignites plasma.Type: GrantFiled: December 30, 2003Date of Patent: May 10, 2005Assignee: DongbuAnam Semiconductor Inc.Inventor: Sang Hun Oh
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Patent number: 6878898Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.Type: GrantFiled: August 6, 2003Date of Patent: April 12, 2005Assignee: Texas Instruments IncorporatedInventors: Timothy J. Hogan, Timothy A. Taylor
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Patent number: 6855908Abstract: A glass substrate having a surface which has been leveled, preferably to a flatness of 0.04-1.3 nm/cm2 of the surface, by local plasma etching is provided. A glass substrate whose surface carries microscopic peaks and valleys is leveled by measuring the height of peaks and valleys on the substrate surface, and plasma etching the substrate surface while controlling the amount of plasma etching in accordance with the height of peaks.Type: GrantFiled: April 19, 2002Date of Patent: February 15, 2005Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Masaki Takeuchi, Yukio Shibano
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Patent number: 6838635Abstract: In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.Type: GrantFiled: November 5, 2002Date of Patent: January 4, 2005Inventors: Daniel J. Hoffman, Gerald Zheyao Yin
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Publication number: 20040251240Abstract: Apparatus for treating a surface using a plasma discharge includes a first capacitor electrode of a first capacitor; a second capacitor electrode of a second capacitor; and an electrical connection for connecting the first capacitor electrode to the second capacitor electrode. The first capacitor electrode and second capacitor electrode are disposed in juxtaposition.Type: ApplicationFiled: May 18, 2004Publication date: December 16, 2004Applicant: BAE Systems PLCInventors: Scott Joseph Simon, John Eric Dolan
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Patent number: 6831258Abstract: A heating apparatus for performing heat treatment on a wafer applied with a resist before or after exposure includes a heating plate for heating a wafer which is placed on the heating plate, a light intensity detecting apparatus for irradiating light on the wafer to detect intensity of reflected light from the resist on the wafer, and a control section for controlling heating performed by the heating plate on the basis of the detected intensity of reflected light so that heating amount applied to a plurality of wafers becomes constant. Accordingly, the heating amount of the wafer can be controlled to be constant and variations in dimension of resist patterns can be reduced.Type: GrantFiled: June 30, 2003Date of Patent: December 14, 2004Assignee: Kabushiki Kaisha ToshibaInventors: Kei Hayasaki, Shinichi Ito, Kenji Kawano
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Patent number: 6825437Abstract: When determining the presence of foreign particles in a processing chamber by radiating a laser beam inside a processing chamber and detecting scattered light from foreign particles within the processing chamber, the detection of scattered light is performed using a detecting lens having a wide field angle and deep focal depth. Accordingly, the detection of foreign particles floating in the processing chamber can be performed across a wide range, and with uniform sensitivity, with a detecting optical system having a simple constitution.Type: GrantFiled: August 30, 2002Date of Patent: November 30, 2004Assignee: Hitachi, Ltd.Inventors: Hiroyuki Nakano, Takeshi Arai, Toshihiko Nakata
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Patent number: 6800830Abstract: A method of fabricating a semiconductor device includes providing a semiconductor substrate, forming an oxide layer in the substrate, and adding nitrogen atoms on top of the exposed surface of the oxide film to form a diffusion barrier.Type: GrantFiled: August 16, 2001Date of Patent: October 5, 2004Assignee: Hitachi Kokusai Electric, Inc.Inventor: Imad Mahawili
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Patent number: 6797913Abstract: A method of treating a fluorocarbon feedstock includes radio frequency induction heating of a zone of a reaction chamber to a temperature not exceeding 950° C. The feedstock heats up in the heating zone, and the reaction chamber pressure and heating zone temperature are chosen so that a fluorocarbon compound present in the feedstock dissociates or depolymerizes into a more desired fluorocarbon compound. A hot product gas, which includes the more desired fluorocarbon compound, is formed and then quenched to stabilize the more desired fluorocarbon compound.Type: GrantFiled: November 19, 2002Date of Patent: September 28, 2004Assignee: South African Nuclear Energy Corporation LimitedInventor: Izak Jacobus Van Der Walt
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Patent number: 6768079Abstract: The invention provides a susceptor with a built-in plasma generation electrode that can make the throughput by a range of plasma processing of a plate specimen uniform, and that has excellent plasma resistance, thermal conductivity and durability, and a manufacturing method that can obtain this susceptor with a built-in plasma generation electrode easily and economically.Type: GrantFiled: October 29, 2002Date of Patent: July 27, 2004Assignee: Sumitomo Osaka Cement Co. Ltd.Inventor: Mamoru Kosakai
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Patent number: 6747239Abstract: A plasma processing apparatus having a process chamber to process specimens; a status detecting unit for detecting the internal processing status of the process chamber and outputting a plurality of signals; and a signal converting unit for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selector and creating an arbitrary number of device status signals. The signal converting unit creates fewer effective device status signals of a time series from the output signals.Type: GrantFiled: May 14, 2003Date of Patent: June 8, 2004Assignee: Hitachi, Ltd.Inventors: Junichi Tanaka, Hiroyuki Kitsunai, Ryoji Nishio, Seiichiro Kanno, Hideyuki Yamamoto
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Patent number: 6744005Abstract: The invention relates to a method for producing shaped bodies or applying coatings on workpieces. The aim of the invention is to produce shaped bodies which are structured in an almost arbitrarily three-dimensional manner or contoured coatings are allowed to be formed on most different workpieces wherein simultaneously the required time and energy will be reduced in comparison with conventional procedures. According to the invention, a shaped body will be built-up in layers or a coating that consists of at least two individual layers will be applied on a workpiece. For this, a platform whereon the shaped body will be built-up or the workpiece is held in a clamping device which is movable within at least two axes in relation to two different sources of heat.Type: GrantFiled: May 9, 2002Date of Patent: June 1, 2004Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung e.V.Inventors: Eckhard Beyer, Steffen Nowotny, Siegfried Scharek
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Patent number: 6734386Abstract: A microporous PVDF membrane is rendered hydrophilic without making it brittle or lowering its heat resistance by exposing the membrane to a plasma under controlled conditions. Specifically, a microporous PVDF membrane is first coated with an appropriate monomer. After the monomer dries, the membrane is exposed to the plasma. Any remaining uncured monomer on the membrane is removed. Thereafter, the membrane is pleated and incorporated in a filter cartridge.Type: GrantFiled: February 5, 2002Date of Patent: May 11, 2004Assignee: Meissner Filtration Products, Inc.Inventors: Siegfried Lauterbach, Christopher A. Meissner
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Patent number: 6696662Abstract: Plasma processing is carried out at pressures of about atmospheric pressure, at pressures below atmospheric pressure, or at pressures above atmospheric pressure. The plasmas are generated using a RF power source and a rectangular waveguide. The plasmas can be used for applications such as materials processing and carrying out chemical reactions.Type: GrantFiled: May 25, 2001Date of Patent: February 24, 2004Assignee: Advanced Energy Industries, Inc.Inventors: Russell F. Jewett, Jason F. Elston
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Patent number: 6683272Abstract: A plasma source for a spectrometer for spectrochemical analysis of a sample is characterized by use of the magnetic field component of applied microwave energy for exciting a plasma. The source includes a waveguide cavity (10) fed with TE10 mode microwave power. A plasma torch (16) passes through the cavity (10) and is axially aligned with a magnetic field maximum (18) of the applied microwave electromagnetic field. Magnetic field concentration structures such as triangular section metal bars (20) may be provided. In an alternative embodiment a resonant iris may be provided within a waveguide and the plasma torch positioned relative thereto such that the microwave electromagnetic field at the resonant iris excites the plasma.Type: GrantFiled: December 31, 2002Date of Patent: January 27, 2004Assignee: Varian Australia PTY LTDInventor: Michael R. Hammer
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Patent number: 6677549Abstract: To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.Type: GrantFiled: July 17, 2001Date of Patent: January 13, 2004Assignee: Canon Kabushiki KaishaInventors: Nobumasa Suzuki, Shinzo Uchiyama, Hideo Kitagawa
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Patent number: 6659110Abstract: A method of removing organic impurities from a surface of a substrate that is used for feeding or processing web material, wherein a jet of an atmospheric plasma is directed onto the surface of the substrate.Type: GrantFiled: June 20, 2001Date of Patent: December 9, 2003Assignee: PlasmaTreat GmbHInventors: Peter Förnsel, Christian Buske
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Patent number: 6646223Abstract: A method for improving the edge-to-center photoresist ash rate uniformity in lower temperature (typically, but not limited to <100° C.) processing of integrated circuits and micro-electro-mechanical devices. A varying gap distance 32 from the edge-to-center of the upper and lower grid plates, 30 and 31, of a plasma ashing machine is provided to allow additional flow of plasma gases into the normally semi-stagnated area near the center of the wafer being processed. This improvement overcomes the problem of slower photoresist removal in the center of the wafer. Three configurations of the invention is described, including both stepwise and continuous variation of the grid plate gap spacing and optionally, the variation of the size of grid plate holes in a parallel grid plate assembly.Type: GrantFiled: December 21, 2000Date of Patent: November 11, 2003Assignee: Texas Instruments IncorporatedInventors: Timothy J. Hogan, Timothy A. Taylor
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Patent number: 6600127Abstract: A process for synthesizing nanosized powders utilizes a hybrid exploding wire device containing a solid metal wire fuse in the bore of a tube that is open at each end. The ends of the fuse are connected to electrodes on the ends of the tube. The electrodes are designed to erode to maintain a heavy metal plasma. The bore may comprise a corresponding ceramic to be produced, and a microcrystalline powder of a corresponding ceramic may be retained within the bore. An electrical discharge vaporizes and ionizes the fuse. The tube confines the radial expansion of the plasma such that the plasma exits from both ends of the tube where it reacts with a suitable gas to form nanoscale particles. In addition, the plasma gas ablates and vaporizes a portion of the bore wall to contribute to the nanoceramic synthesis. Other alternatives include replacing the fuse with a thin conductive sheath or a consumable metal insert.Type: GrantFiled: September 13, 2000Date of Patent: July 29, 2003Assignee: Nanotechnologies, Inc.Inventors: Dennis Roger Peterson, Dennis Eugene Wilson, Darrin Lee Willauer
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Patent number: 6593699Abstract: The invention provides a system and apparatus by which a workpiece pad is supplied to support workpieces being implanted in a rotating or spinning batch implanter process disk. The workpiece pad provides reduced surface adhesion forces and sufficient heat transfer from the workpieces to the process disk, and furthermore reduces particle generation and contamination of the workpiece from the workpiece pad. The workpiece pad furthermore comprises an ordered array of micro-structures. In addition, the invention includes a method of forming a workpiece pad comprising an ordered array of micro-structures.Type: GrantFiled: November 7, 2001Date of Patent: July 15, 2003Assignee: Axcelis Technologies, Inc.Inventor: Bryan C. Lagos
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Patent number: 6590179Abstract: A plasma processing apparatus having a process chamber to process specimens, a status detecting means for detecting the internal processing status of said process chamber and outputting a plurality of signals, and signal converting means for extracting an arbitrary number of signal processing filters from a signal filter database using a signal filter selecting means and creating an arbitrary number of device status signals. The signal converting means creates fewer effective device status signals of a time series from said output signals.Type: GrantFiled: February 26, 2001Date of Patent: July 8, 2003Assignee: Hitachi, Ltd.Inventors: Junichi Tanaka, Hiroyuki Kitsunai, Ryoji Nishio, Seiichiro Kanno, Hideyuki Yamamoto
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Publication number: 20030085204Abstract: The invention provides a system and apparatus by which a workpiece pad is supplied to support workpieces being implanted in a rotating or spinning batch implanter process disk. The workpiece pad provides reduced surface adhesion forces and sufficient heat transfer from the workpieces to the process disk, and furthermore reduces particle generation and contamination of the workpiece from the workpiece pad. The workpiece pad furthermore comprises an ordered array of micro-structures. In addition, the invention includes a method of forming a workpiece pad comprising an ordered array of micro-structures.Type: ApplicationFiled: November 7, 2001Publication date: May 8, 2003Inventor: Bryan C. Lagos
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Patent number: 6552296Abstract: An improved toroidal low-field plasma source allows plasma ignition within a wider range of gas conditions than permitted by prior art plasma sources. Power efficiency of the plasma source is improved by automatically adjusting the power delivered to the plasma based on the load to the power supply. The plasma source can be operated over a wider pressure range than allowed by prior art plasma sources. The plasma source can be operated so as to increase the output of atomic species from the source. The plasma source can be operated to increase the etch rate of organic materials. The plasma source can efficiently remove hazardous gas compounds from effluent gas streams by converting them into scrubbable products.Type: GrantFiled: September 17, 2001Date of Patent: April 22, 2003Assignee: Applied Science and Technology, Inc.Inventors: Donald K. Smith, Xing Chen, William M. Holber, Eric Georgelis
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Patent number: 6545245Abstract: In accordance with the present invention, a method is provided for dry cleaning a processing chamber. This method comprises the step of introducing a first cleaning process gas into the processing chamber. A plasma is formed from the first cleaning process gas and maintained for a first time period. Next, repeating the step of introducing the cleaning process gas, a second cleaning process gas is introduced into the processing chamber and maintained the plasma for a second time period. As a result, the present invention is capable of removing polymer built up on the processing chamber's interior surfaces to achieve a high yield and maintaining throughput of the substrates in the plasma processing system.Type: GrantFiled: May 2, 2001Date of Patent: April 8, 2003Assignee: United Microelectronics Corp.Inventors: Chia-Fu Yeh, Jui-Chun Kuo, Wen-Shan Wei, Wen-Sheng Chien
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Patent number: 6528751Abstract: In accordance with one aspect of the invention, a plasma reactor has a capacitive electrode driven by an RF power source, and the electrode capacitance is matched at the desired plasma density and RF source frequency to the negative capacitance of the plasma, to provide an electrode plasma resonance supportive of a broad process window within which the plasma may be sustained.Type: GrantFiled: March 17, 2000Date of Patent: March 4, 2003Assignee: Applied Materials, Inc.Inventors: Daniel J. Hoffman, Gerald Zheyao Yin
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Patent number: 6509542Abstract: A plasma reactor system with controlled DC bias for manufacturing semiconductor wafers and the like. The reactor system includes a plasma chamber, a plasma generating coil and a chuck including a chuck electrode. The chuck supports a workpiece within the chamber. The plasma reactor system further includes a pair of generators, one of which supplies a radio frequency signal to the plasma generating coil. The second generator delivers a RF signal which to the chuck electrode and acts to control DC bias at the workpiece. Peak voltage sensor circuitry and set point signal circuitry controls the power output of the generator, and a matching network coupled between the generator and the first electrode matches the impedance of the RF signal with the load applied by the plasma. DC bias determines the energy with which plasma particles impact the surface of a workpiece and thereby determines the rate at which the process is performed.Type: GrantFiled: April 25, 2000Date of Patent: January 21, 2003Assignee: LAM Research Corp.Inventors: Neil Benjamin, Scott Baldwin, Seyed Jafar Jafarian-Tehrani
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Publication number: 20020179576Abstract: A glass substrate having a surface which has been leveled, preferably to a flatness of 0.04-1.3 nm/cm2 of the surface, by local plasma etching is provided. A glass substrate whose surface carries microscopic peaks and valleys is leveled by measuring the height of peaks and valleys on the substrate surface, and plasma etching the substrate surface while controlling the amount of plasma etching in accordance with the height of peaks.Type: ApplicationFiled: April 19, 2002Publication date: December 5, 2002Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Masaki Takeuchi, Yukio Shibano
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Publication number: 20020179577Abstract: A plasma processing method comprises the steps of supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of starting plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on the surface of the substrate.Type: ApplicationFiled: June 4, 2002Publication date: December 5, 2002Inventors: Chishio Koshimizu, Jun Ooyabu, Hideki Takeuchi, Akira Koshiishi
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Publication number: 20020162827Abstract: In accordance with the present invention, a method is provided for dry cleaning a processing chamber. This method comprises the step of introducing a first cleaning process gas into the processing chamber. A plasma is formed from the first cleaning process gas and maintained for a first time period. Next, repeating the step of introducing the cleaning process gas, a second cleaning process gas is introduced into the processing chamber and maintained the plasma for a second time period. As a result, the present invention is capable of removing polymer built up on the processing chamber's interior surfaces to achieve a high yield and maintaining throughput of the substrates in the plasma processing system.Type: ApplicationFiled: May 2, 2001Publication date: November 7, 2002Inventors: Chia-Fu Yeh, Jui-Chun Kuo, Wen-Shan Wei, Wen-Sheng Chien
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Patent number: 6476342Abstract: In accordance with the present invention, a directed plasma beam is employed in air to selectively remove coatings from paper products at high production rates. The shape and intensity of the beam is controlled to obtain a controlled rate of removal of the coating. The method does not require vacuum to be established and allows for the plasma to be generated from high pressure air.Type: GrantFiled: November 24, 2000Date of Patent: November 5, 2002Assignee: Creo SRLInventor: Daniel Gelbart
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Publication number: 20020148816Abstract: A method and apparatus for treating a workpiece using capillary discharge plasma are disclosed in the present invention.Type: ApplicationFiled: August 23, 2001Publication date: October 17, 2002Inventors: Chang Bo Jung, Jong Han Jeong, Hyun Jo So, Dong Woo Yu, Steven Kim
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Patent number: 6459066Abstract: A properly designed and positioned Faraday shield/dielectric spacer/source-coil assembly is used to nearly fix the input impedance of an Inductively Coupled Plasma (ICP) source-coil, making a variable matching network almost unnecessary, and allowing for pulsed plasma processing with very little reflected power. Further, the nearly constant input-impedance also means a nearly constant standing wave pattern on the ICP source-coil and constant power deposition symmetry as well as plasma uniformity independent of RF power, gas pressure and gas composition. This is not possible without a properly designed and positioned Faraday shield because the source-coil impedance is coupled to that of the plasma and changes significantly with the plasma conditions.Type: GrantFiled: June 8, 2001Date of Patent: October 1, 2002Assignee: Board of Regents, The University of Texas SystemInventors: Marwan H. Khater, Lawrence J. Overzet
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Publication number: 20020104832Abstract: A plasma processing apparatus having a process chamber to process specimens, further comprising a status detecting means for detecting the internal processing status of said process chamber and outputting a plurality of signals and signal converting means for extracting an arbitrary number of signal processing filters from a signal filter database by a signal filter selecting means and creating arbitrary number of device status signals; wherein said signal converting means create a fewer effective device status signals of a time series from said output signals.Type: ApplicationFiled: February 26, 2001Publication date: August 8, 2002Inventors: Junichi Tanaka, Hiroyuki Kitsunai, Ryoji Nishio, Seiichiro Kanno, Hideyuki Yamamoto
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Patent number: 6426477Abstract: A plasma processing method includes supplying a low-frequency bias to a first electrode carrying a substrate, and supplying a high-frequency power to a second electrode facing the first electrode, wherein the low-frequency bias is supplied to the first electrode in advance of staring plasma by the energy of the high-frequency power, with an electric power sufficient to form an ion-sheath on a surface of the substrate. A plasma processing apparatus is also provided.Type: GrantFiled: September 12, 2000Date of Patent: July 30, 2002Assignee: Tokyo Electron LimitedInventors: Chishio Koshimizu, Jun Ooyabu, Hideki Takeuchi, Akira Koshiishi
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Patent number: 6399926Abstract: A heat treatment apparatus permits manufacture of a high-accuracy resist pattern by reducing a temperature difference within a substrate surface in the transition state of heating or cooling the substrate and the steady state. The heat treatment apparatus includes a thermal plate having a main surface containing a first area on which the substrate is to be placed and a second area surrounding the first area, heat capacity per unit area in the second area of the main surface being smaller than heat capacity per unit area in the first area of the main surface; and a temperature control element for controlling temperature of the thermal plate in accordance with supplied current.Type: GrantFiled: March 27, 2001Date of Patent: June 4, 2002Assignee: Sigmameltec Ltd.Inventors: Michiro Takano, Osamu Katada
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Patent number: 6355902Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.Type: GrantFiled: January 2, 2001Date of Patent: March 12, 2002Assignee: Tokyo Electron LimitedInventors: Takashi Akahori, Masaki Tozawa, Yoko Naito, Risa Nakase, Osamu Yokoyama, Shuichi Ishizuka, Shunichi Endo, Masahide Saito, Takeshi Aoki, Tadashi Hirata
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Publication number: 20020023899Abstract: A properly designed and positioned Faraday shield/dielectric spacer/source-coil assembly is used to nearly fix the input impedance of an Inductively Coupled Plasma (ICP) source-coil, making a variable matching network almost unnecessary, and allowing for pulsed plasma processing with very little reflected power. Further, the nearly constant input-impedance also means a nearly constant standing wave pattern on the ICP source-coil and constant power deposition symmetry as well as plasma uniformity independent of RF power, gas pressure and gas composition. This is not possible without a properly designed and positioned Faraday shield because the source-coil impedance is coupled to that of the plasma and changes significantly with the plasma conditions.Type: ApplicationFiled: June 8, 2001Publication date: February 28, 2002Inventors: Marwan H. Khater, Lawrence J. Overzet
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Publication number: 20020008088Abstract: To provide a production method of a structure with which a degradation of a processing speed is suppressed and plasma processing is performed with using a reliable plasma processing apparatus and which is excellent in repeatability, a plasma processing apparatus, which includes a container whose inside can be exhausted and a gas supply port for supplying a process gas to the container and subjects to plasma processing an object to be processed placed in the container, is characterized in containing a light shielding film that disturbs the incidence of light, which may increase dielectric loss of a permeable window, to this dielectric window on the internal surface of the permeable window permeating high frequency energy for generating the plasma of the above-described gas, and is provided in the above-described container.Type: ApplicationFiled: July 17, 2001Publication date: January 24, 2002Inventors: Nobumasa Suzuki, Shinzo Uchiyama, Hideo Kitagawa
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Publication number: 20020000369Abstract: Powder of a simple substance or a combination of a plurality of carbides of metals belonging to the IVa, Va and VIa families in the Periodic Table is mixed with a ferrous-family metal powder or non-ferrous metal powder having the same composition as the treatment target (2) as a simple substance or a combination of a plurality of metals, and this is compressed and molded, and then preliminarily sintered to form a sintered electrode (12) serving as a discharge processing electrode; and said device is provided with a switching unit which alters electrical conditions at the time when the base member of the treatment target (2) is directly subjected to a discharging surface treatment and the electrical conditions at the time when a hard coat film (13) that has been formed is subjected to a discharging surface treatment according to the characteristics of the treatment target material.Type: ApplicationFiled: May 31, 2001Publication date: January 3, 2002Applicant: MITSUBISHI DENKI KABUSHIKI KAISHAInventors: Naotake Mohri, Manabu Yoshida, Akihiro Goto
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Publication number: 20010054605Abstract: In order to more accurately control the radiation characteristics of microwaves to improve the controllability of processing in radial and circumferential directions of an article, there are disclosed a microwave applicator and a plasma processing apparatus using the applicator, which comprise a circular waveguide having a surface provided with a plurality of slots for radiating microwaves, wherein the centers of the plurality of slots are offset in a direction parallel to the surface with respect to the center of the circular waveguide.Type: ApplicationFiled: March 26, 2001Publication date: December 27, 2001Inventors: Nobumasa Suzuki, Shigenobu Yokoshima
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Patent number: 6326588Abstract: In the method for producing components (2) with a beveled cut edge (Y bevel), a vertical laser beam (5) is used to make at least one vertical cut through the material (1), parts (3) of the material (1) which lie outside the component (2) are removed, and then an inclined laser beam (6) is used to make an inclined cut along the vertical cut edge produced.Type: GrantFiled: August 3, 1999Date of Patent: December 4, 2001Assignee: Messer Cutting & Welding AktiengesellschaftInventors: Norbert Neubauer, Peter Heine
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Patent number: 6320154Abstract: An objective of this invention is to provide a plasma processing method that is capable of reducing particle contamination during plasma processing performed upon a semiconductor wafer. If the use of electron cyclotron resonance to generate a plasma and form a thin film of SiOF or the like is used by way of example, a sheath zone of a few mm thick is formed between the wafer and the plasma, and particles are trapped within a boundary zone between the sheath zone and the plasma. At this point, a microwave power is not dropped suddenly to zero after the film-formation processing, but is reduced to a lower level of, for example, 1 kW and is held for 10 seconds. This reduces the plasma density and thickens the sheath zone, so that particles are held away from the wafer surface. When the microwave power is subsequently cut, the particles move freely around, but only a small proportion thereof adhere to the wafer.Type: GrantFiled: April 27, 1999Date of Patent: November 20, 2001Assignee: Tokyo Electron LimitedInventors: Takashi Akahori, Risa Nakase, Shinsuke Oka
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Patent number: 6307174Abstract: A method for high-density plasma etching. A substrate is provided. A material layer is formed on the substrate. A patterned photo-resist layer is formed on the oxide layer. The material layer is patterned by the high-density plasma etching, simultaneously, a formation of a barrier layer over the substrate with the patterning process is suppressed and nitrogen gas generated in the patterned photo-resist layer is reduced.Type: GrantFiled: March 22, 2000Date of Patent: October 23, 2001Assignee: United Microelectronics Corp.Inventors: Chan-Lon Yang, Michael W C Huang, Tong-Yu Chen
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Patent number: 6291793Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings.Type: GrantFiled: September 2, 1999Date of Patent: September 18, 2001Assignee: Appplied Materials, Inc.Inventors: Xue-Yu Qian, Arthur H. Sato
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Publication number: 20010020608Abstract: Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.Type: ApplicationFiled: January 2, 2001Publication date: September 13, 2001Inventors: Takashi Akahori, Masaki Tozawa, Yoko Naito, Risa Nakase, Osamu Yokoyama, Shuichi Ishizuka, Shunichi Endo, Masahide Saito, Takeshi Aoki, Tadashi Hirata
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Patent number: 6288357Abstract: A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductive plasma generator. The workpiece surface is exposed to a source of energetic ions, the chamber is filled with gas, and the gas is ionized with radio frequency energy to form inductive plasma that surrounds the workpiece. An ion beam mounted above the workpiece scans the workpiece surface with sufficient energy to remove micro irregularities from the workpiece surface.Type: GrantFiled: February 10, 2000Date of Patent: September 11, 2001Assignee: SpeedFam-IPEC CorporationInventor: Timothy S. Dyer