Abstract: A plasma etching apparatus includes a vacuum processing chamber; a lower electrode, i.e., a mounting table for mounting the substrate, provided in the vacuum processing chamber; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas to the vacuum processing chamber; a high frequency power supply unit for supplying a high frequency power to the lower electrode; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In a method for performing a plasma etching on a substrate by using the plasma etching apparatus, a plasma is generated in the vacuum processing chamber to perform the plasma etching on the substrate by using the plasma after the focus ring is heated by supplying a high frequency power from the high frequency power supply unit to the lower electrode under a condition that no plasma is generated.

Abstract: A pulse voltage is applied on a process gas to generate discharge plasma. The pulse voltage has a duty ratio controlled in a range of 0.001 percent or more and 8.0 percent or less. Preferably, the discharge plasma has an electron density of 1×1010 cm?3 or larger and an electron temperature of 1.5 eV or lower at a supplied power of 1.0 W/cm2 or more per a unit area of a discharge electrode.

Abstract: The invention relates to a method for exposing an integrated circuit by ablating the polymer coating initially covering the integrated circuit, characterised in that it comprises the combined application of a laser radiation and a plasma onto the coating initially covering the integrated circuit.

Abstract: A system and method employing a microplasma to electrically charge nano- or micro-particles in a gas phase and, subsequently, trap the charged particles within the microplasma using the microplasma's built-in electric fields are disclosed. Confinement of the particles allows their density to be increased over time such that very low concentrations of particles can be detected, e.g., by methods such as laser scattering and/or detection of the plasma-induced charge on the particles. Preferably, charge detection methods are employed when nano-particles are to be trapped and detected.

Abstract: An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode.

Abstract: An electrostatic chuck (“chuck”) is provided for controlling a radial temperature profile across a substrate when exposed to a plasma. The chuck includes a number of independently controllable gas volumes that are each defined in a radial configuration relative to a top surface of the chuck upon which the substrate is to be supported. The chuck includes a support member and a base plate. The base plate positioned beneath and in a spaced apart relationship from the support member. The gas volumes are defined between the base plate and the support member, with separation provided by annularly-shaped thermally insulating dividers. Each gas volume can include a heat generation source. A gas pressure and heat generation within each gas volume can be controlled to influence thermal conduction through the chuck such that a prescribed radial temperature profile is achieved across the substrate.

Abstract: The present invention discloses a microwave plasma generator which includes a chamber, a conductive inorganic substance, a trace gas and a microwave source. The conductive inorganic substance and the trace gas are housed in the chamber with an inner pressure about 0.001˜10 torr. By irradiating the conductive inorganic substance and exciting the trace gas, clean and uniform plasma will be generated. The plasma generator of this invention is easily operated and can be applied to semiconductor manufacturing processes, for example, material modification, etching/cleaning, roughing and ion doping/hybrid.

Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

Abstract: A method and associated apparatus for generating a plasma field, including: arranging the points of discharge of a plurality of electrodes into a plane, applying voltage to each electrode, providing at least one grounded electrode, and controlling the path between the electrodes and corresponding temperature of the plasma formed between the electrodes by controlling the signal and phase to the high voltage generators.

Abstract: Methods and apparatus for plasma-assisted heat treatments are provided. The method can include initiating a heat treating plasma within a cavity (14) by subjecting a gas to electromagnetic radiation in the presence of a plasma catalyst (70), heating the object by exposing the object to the plasma, and maintaining exposure of the object to the plasma for a sufficient period to alter at least one material property of the object.

Abstract: The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the electrodes, the substrate having an organic-material film and an inorganic-material film; and an etching step of applying a high-frequency electric power to at least one of the electrodes to form a high-frequency electric field between the pair of the electrodes, supplying a process gas into the chamber to form a plasma of the process gas by means of the electric field, and selectively plasma-etching the organic-material film of the substrate with respect to the inorganic-material film by means of the plasma; wherein a frequency of the high-frequency electric power applied to the at least one of the electrodes is 50 to 150 MHz in the etching step.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A passive plasma catalyst may include, for example, any object capable of inducing a plasma by deforming a local electric field. An active plasma catalyst can include any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.

Abstract: A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a radiation cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another radiation source.

Abstract: A vacuum plasma generator (VPG) includes an output connector for electrical connection of the VPG to at least one electrode of a plasma chamber. The VPG includes a mains connector for connection of the VPG to a mains power supply, a mains input filter coupled to the mains connector, a voltage converter coupled to the mains input filter for generating an output signal, a voltage converter control input for connection to a voltage converter control, a shield that surrounds at least the voltage converter, the mains power supply, and the mains input filter, and a connection device that provides an electrical connection between the shield and the plasma chamber.

Abstract: A microwave plasma processing device can form a uniform thin film on a substrate to be processed. The microwave plasma processing device includes a fixing device for fixing a substrate to be processed onto the center axis in a plasma processing chamber, an exhaust device for depressurizing the inside and outside of the substrate, a metal processing gas supply member present in the substrate and forming a reentrant cylindrical resonating system along with the plasma processing chamber, and a microwave introducing device for introducing a microwave into the plasma processing chamber to process it. A microwave sealing member is provided in a specified position of the substrate-holding portion of the fixing device, and the connection position of the microwave introducing device is set to a specified weak-field position out of a field intensity distribution formed in the interior of the plasma processing chamber.

Abstract: A method and apparatus for processing metal bearing gases involves generating a toroidal plasma in a plasma chamber. A metal bearing gas is introduced into the plasma chamber to react with the toroidal plasma. The interaction between the toroidal plasma and the metal bearing gas produces at least one of a metallic material, a metal oxide material or a metal nitride material.

Abstract: Methods and apparatus are provided for plasma-assisted processing multiple work pieces in a manufacturing line. In one embodiment, the method can include placing the work pieces in movable carriers, moving the carriers on a conveyor into an irradiation zone, flowing a gas into the irradiation zone, igniting the gas in the irradiation zone to form a plasma (e.g., by subjecting the gas to electromagnetic radiation in the presence of a plasma catalyst), sustaining the plasma for a period of time sufficient to at least partially plasma process at least one of the work pieces in the irradiation zone, and advancing the conveyor to move the at least one plasma-processed work piece out of the irradiation zone. Various types of plasma catalysts are also provided.

Abstract: A plasma system is disclosed. The plasma system includes a microwave waveguide assembly having a longitudinal axis parallel with a first axis. The plasma system also includes a plasma tube assembly intersecting the microwave waveguide assembly. The plasma tube assembly has a longitudinal axis parallel with a second axis that is substantially orthogonal with the first axis. The plasma tube assembly also has a plasma-sustaining region defined by an upstream plurality of plasma traps and a downstream plurality of plasma traps.

Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.

Abstract: A plasma generator comprising a propagation chamber propagating an electromagnetic radiation, and a plasma-generating chamber associated with the propagation chamber; said propagation chamber has a passage region of increasing width on moving away from the entrance region for insertion of the electromagnetic radiation into the propagation chamber. The passage region enables an at least partial passage of the electromagnetic radiation towards the plasma-generating chamber.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper electrode, a backing member attachable to an upper surface of the upper electrode, and an outer ring. The outer ring surrounds an outer surface of the backing member and is located above the upper surface of the upper electrode.

Abstract: In one embodiment, a system to measure changes and a dual damascene trench depth, comprises a power source, and impedance matching network coupled to the power source and to an electrode, a radio frequency sensor coupled to the impedance matching network, and a controller to establish a baseline correlation between a plasma impedance and the dual damascene trench depth, and use the baseline correlation to measure changes in the dual damascene trench depth.

Abstract: In one aspect of the invention is a gas feed for injecting gas into a plasma-processing chamber that reduces the speed at which the gas interacts with the plasma discharge, so enhancing the stability of the plasma and the production of reaction products. In one embodiment, the gas feed comprises a gas speed reducer having apertures along its wall through which gas is distributed into the plasma chamber at a tangent to the chamber walls. In another embodiment, the gas feed comprises a gas speed reducer, which is made up of one or more channels such that, when traveling through the channels, the input and the output holes of the channels can only be connected by a broken line. In yet another embodiment, the gas speed reducer has a plurality of perforated sheaths, such that holes on one perforated sheath are not aligned with holes on another perforated sheath.

Abstract: A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.

Abstract: Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.

Abstract: Making it possible to execute the detection of the particles floating inside a processing chamber with the use of an optical system including one observing window and one unit (An object of the present invention is, by using an optical system including one observing window and one unit, to make it possible to execute the detection of the particles floating inside a processing chamber.) Also, in order to be able to detect exceedingly feeble particle scattered-lights with a high-accuracy, when performing a desired thin-film forming or thin-film processing treatment toward a to-be-processed target inside the processing chamber, the following method is employed: First, the irradiation with a beam is executed into the processing chamber through the observing window.

Abstract: Method, device, and system, for directed multi-deflected ion beam milling of a work piece, and, determining and controlling extent thereof. Providing an ion beam; and directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece. Device includes an ion beam source assembly; and an ion beam directing and multi-deflecting assembly, for directing and at least twice deflecting the provided ion beam, for forming a directed multi-deflected ion beam, wherein the directed multi-deflected ion beam is directed towards, incident and impinges upon, and mills, a surface of the work piece.

Abstract: In one implementation, a method is provided for testing a plasma reactor multi-frequency matching network comprised of multiple matching networks, each of the multiple matching networks having an associated RF power source and being tunable within a tunespace. The method includes providing a multi-frequency dynamic dummy load having a frequency response within the tunespace of each of the multiple matching networks at an operating frequency of its associated RF power source. The method further includes characterizing a performance of the multi-frequency matching network based on a response of the multi-frequency matching network while simultaneously operating at multiple frequencies. In one embodiment, a plasma reactor multi-frequency dynamic dummy load is provided that is adapted for a multi-frequency matching network having multiple matching networks. Each of the multiple matching networks being tunable within a tunespace.

Abstract: An apparatus and method for visualization of process conditions in a process chamber or chambers, particularly during the fabrication of integrated circuits on substrates in the process chambers. The apparatus includes an inspection chamber which is installed adjacent to a process chamber. A camera provided in the inspection chamber is used to view the interior of the process chamber as the etching, chemical vapor deposition or other process is carried out in the process chamber. A video monitor is typically connected to the camera for viewing images from the camera. In the event that a defect-precipitating event occurs in the process chamber, such as a mechanical malfunction or accumulation of excessive levels of polymer deposition on the chamber walls, the event is displayed on the monitor in real-time.

Abstract: A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member.

Abstract: The footprint of a reactive atom plasma processing tool can be modified using an aperture device. A flow of reactive gas can be injected into the center of an annular plasma. An aperture can be positioned relative to the plasma such that the effective footprint of the plasma can be changed without adjusting the gas flows or swapping out the tool. Once the aperture and tool are in position relative to a workpiece, reactive atom plasma processing can be used to modify the surface of the workpiece, such as to etch, smooth, polish, clean, and/or deposit material onto the workpiece. If necessary, a coolant can be circulated about the aperture. Multiple apertures can also be used to provide a variety of footprint sizes and/or shapes. This description is not intended to be a complete description of, or limit the scope of, the invention. Other features, aspects, and objects of the invention can be obtained from a review of the specification, the figures, and the claims.

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a processing cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another.

Abstract: With respect to a substrate on which a resist solution is applied, the inplane uniformity of the quality of a resist film is improved in a heating processing carried out before exposure, and the yields of products are improved. A substrate on which a resist solution is applied is mounted on a heating plate in a processing vessel. Then, a purge gas is supplied into the processing vessel, and heating is started. Above the mounting position of the substrate, a thickness detecting sensor for monitoring the thickness of the resist film formed on the surface of the substrate is provided. When the thickness becomes a predetermined value or less, a control part cause a lift pin to upwardly move so as to increase the distance between the substrate and the heating plate. Thus, the heating value applied to the substrate decreases, and thereafter, only the solvent is volatilized without having a bad influence on a polymer in the resist film.

Abstract: An arc suppression system for plasma processing comprising at least one sensor coupled to the plasma processing system, and a controller coupled to the at least one sensor. The controller provides at least one algorithm for determining a state of plasma in contact with a substrate using at least one signal generated from the at least one sensor and controlling a plasma processing system in order to suppress an arcing event. When voltage differences between sensors exceed a target difference, the plasma processing system is determined to be susceptible to arcing. During this condition, an operator is notified, and decision can be made to either continue processing, modify processing, or discontinue processing.

Abstract: A method in a plasma processing system for processing a semiconductor substrate is disclosed. The plasma processing system includes a plasma processing chamber and an electrostatic chuck coupled to a bias compensation circuit. The method includes igniting a plasma in a plasma ignition step. Plasma ignition step is performed while a first bias compensation voltage provided by the bias compensation circuit to the chuck is substantially zero and while a first chamber pressure within the plasma processing chamber is below about 90 mTorr. The method further includes processing the substrate in a substrate-processing step after the plasma is ignited. The substrate-processing step employs a second bias compensation voltage provided by the bias compensation circuit that is higher than the first bias compensation voltage and a second chamber pressure substantially equal to the first chamber pressure.

Abstract: A remote plasma source employs a helical coil slow wave structure to couple microwave energy to a flowing gas to produce plasma for downstream substrate processing, such as photoresist stripping, ashing, or etching. The system also includes cooling structures for removing excess heat from the plasma source components.

Abstract: A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

Abstract: An electronic part processing method for peeling off a resin coating of an electronic part having a terminal section. The method includes a step of irradiating, with plasma, a coated wire having copper as a principal constituent and a surface coated with a resin.

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.

Abstract: The present invention provides an accelerated weathering test method, which gives the results having a high correlation with the results of natural exposure and can significantly reduce a test duration. An accelerated weathering test method for a coating film with a remote plasma apparatus, wherein it is possible to bring the interior of the remote plasma apparatus into a reduced pressure and introduce gas, for example oxygen gas, into the apparatus.

Abstract: A plasma reactor operable over a very wide process window of pressure, source power and bias power includes a resonant circuit consisting of an overhead electrode having a first impedance, a wafer support pedestal having a second impedance and a bulk plasma having a third impedance and generally lying in a process zone between the overhead electrode and the wafer support pedestal, the magnitudes of the impedances of the overhead electrode and the wafer support pedestal being within an order of magnitude of one another, the resonant circuit having a resonant frequency determined by the first, second and third impedances.

Abstract: A microwave plasma processing apparatus is disclosed that enables fast and easy plasma ignition at the pressure for plasma processing In the microwave plasma processing apparatus, a plasma ignition facilitating unit is provided to facilitate plasma ignition induced by a microwave. The plasma ignition facilitating unit includes a deuterium lamp that emits vacuum ultraviolet rays, and a transmission window that allows the vacuum ultraviolet rays to penetrate and irradiate a plasma excitation space. The transmission window is a convex lens, and focuses the vacuum ultraviolet rays to enhance ionization of the plasma excitation gas. With such a configuration, it is possible to induce plasma ignition easily and quickly.

Abstract: Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. In one embodiment, a plasma is ignited by subjecting a gas in a multi-mode processing cavity to electromagnetic radiation having a frequency between about 1 MHz and about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A passive plasma catalyst may include, for example, any object capable of inducing a plasma by deforming a local electric field. An active plasma catalyst can include any particle or high energy wave packet capable of transferring a sufficient amount of energy to a gaseous atom or molecule to remove at least one electron from the gaseous atom or molecule, in the presence of electromagnetic radiation.

Abstract: A method and apparatus for maintaining a plasma in a plasma region, by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The energy components at frequencies that are harmonics of the fundamental frequency are monitored and controlled by placing a harmonic multiplexer containing a matching network and RF filter elements in energy receiving communication with the plasma.

Abstract: Apparatus including a chamber and a coil system for converting a field-generating current into a RF magnetic field in the chamber when the chamber contains an ionized gas which interacts with the RF magnetic field to create a plasma. The plasma is contained within a cylindrical region enclosed by the chamber, which region has a longitudinal center axis, and the region is considered to be made up of a plurality of annular zones concentric with the center axis and disposed at respectively different distances from the center axis. The coil system is composed of: a plurality of individual coils each positioned and dimensioned to produce a RF magnetic field which predominantly influences a respective annular zone.

Abstract: A plasma generation system that is capable of generating uniform high-density plasma includes a microwave generator for generating microwaves, a refractor for altering a direction of propagation of the microwaves, and an electromagnetic unit for applying a magnetic field to plasma formed by the microwaves to generate electron cyclotron resonance (ECR).

Abstract: A plasma processing system, method, and computer readable medium for measuring plasma impedance. The system includes a chamber configured to contain a plasma and including a chuck within an interior area of the chamber, the chuck including a support surface and a bottom surface, and a first voltage-current probe positioned at a first position located exterior to the chamber and on a radio-frequency transmission line between the chamber and a power source. The system also includes a simulation module connected to the first voltage-current probe and arranged to solve, based on measurements transmitted from the first voltage-current probe, a radio-frequency model of the radio-frequency transmission line between the first position and a second position located within the chamber.

Abstract: A method and system to obtain a high power density plasma to efficiently generate high concentrations of plasma downstream from one or more plasma sources. A first embodiment of the invention involves a method to provide an improved power density for dissociating one or more gases to create plasma. A second embodiment of the invention involves a method to provide multiple chambers for dissociating one or more gases to create plasma. A third embodiment involves an apparatus using a constriction in a discharge chamber containing one or more gases, to provide an improved power density for dissociating one or more gases to create plasma. A fourth embodiment involves an apparatus using a constriction in multiple discharge chambers containing one or more gases, to provide an improved power density for dissociating one or more gases to create plasma.